CN101140967A - High efficient phosphor convert light emitter and its making process - Google Patents
High efficient phosphor convert light emitter and its making process Download PDFInfo
- Publication number
- CN101140967A CN101140967A CNA2006101517379A CN200610151737A CN101140967A CN 101140967 A CN101140967 A CN 101140967A CN A2006101517379 A CNA2006101517379 A CN A2006101517379A CN 200610151737 A CN200610151737 A CN 200610151737A CN 101140967 A CN101140967 A CN 101140967A
- Authority
- CN
- China
- Prior art keywords
- light
- optical filter
- filter layer
- tool
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Led Device Packages (AREA)
- Optical Filters (AREA)
Abstract
The invention discloses an irradiance device structure and its manufacturing method. The device comprises a substrate on which a semiconductor structure with a luminescent layer is mounted. The optics filter layer with fluorescence conversion on its upward side is on the top of the semiconductor structure. The manufacturing method of the irradiance device provided in the invention comprises: forming a semiconductor structure with a luminescent layer on top of the substrate, forming an optics filter layer on top of the semiconductor structure and forming a fluorescence conversion layer on top of the optics filter layer.
Description
Technical field
The present invention relates to a kind of light-emitting device and manufacture method thereof, especially relate to a kind of light-emitting device and manufacture method thereof with optical filter layer and fluorescence conversion layer.
Background technology
(Light-emitting diode, manufacturing technology LED) mainly can be divided into single-chip (chip) type and how chip-shaped to white light emitting diode at present.The light that the LED of red, blue, green three looks of many chip-shaped uses will send separately blendes together white light, it is needed photochromic that the advantage of this mode is that visual demand is adjusted, but because of using a plurality of LED simultaneously, cost is higher, and because of making the material difference of three-color LED, its input voltage (Vf) is difference to some extent, needs three groups of circuit Control current.In addition, the rate of decay of three kinds of led chips, temperature characterisitic and life-span are all inequality, cause that the white light that mixes is photochromic to change in time.
Aspect the single-chip type, the employed manufacturing technology of commercial at present white light LEDs mainly contains three: 1. blue-ray LED cooperates yellow fluorescent powder: employed fluorescent material is mainly the YAG fluorescent material of yttrium-aluminium-garnet structure, and gold-tinted that powder sends and unabsorbed blue light can produce white light; 2. blue-ray LED cooperates redness and green emitting phosphor: employed fluorescent material is mainly based on the fluorescent material of sulfur-bearing, and that powder sends is red, green glow and unabsorbed blue light can produce white light; 3. ultraviolet leds cooperates red, blue and green three-color phosphor: the ultraviolet light that utilizes LED to produce excites simultaneously and can send fluorescent material red, blue, green glow more than three kinds or three kinds respectively, and powder sends three coloured light and is mixed into white light again.Above technology with fluorescent material with insert in the depression that is equipped with light-emitting diode chip for backlight unit after silica gel (silicone) mixes, but, cause the colour temperature inequality easily because of powder and glue are difficult to even distribution.And, be absorbed after when the exciting light of light-emitting diode enters the fluorescent material glue-line, having quite at high proportion the exciting light of (for example greater than 30%) can be again be returned chip internal reflection for several times by the fluorescent material backscattering, cause the utilization ratio of exciting light significantly to reduce.
United States Patent (USP) the 6th, 642, No. 652 a kind of chip upside-down mounting type (Flip-Chip) semiconductor light-emitting apparatus with fluorescent material structure of announcement form the fluorescent powder accumulation horizon with electrophoresis (electrophoresis).Yet the method is difficult for reaching the equally distributed result of powder by control Electric Field Distribution and inorganic particle state of charge on chip-scale, and especially the control in sides of chip more belongs to difficult.
The present invention proposes a kind of light-emitting device and manufacture method thereof, can form fluorescent material layer on chip before Chip Packaging, to avoid the shortcoming of above-mentioned prior art.Another object of the present invention places optical filter layer between LED and fluorescence conversion layer reducing the optical energy loss because of being caused in LED and the fluorescent material collocation in utilization, and then the overall luminous efficiency of raising light-emitting device.
Summary of the invention
Light-emitting device of the present invention comprises the semiconductor structure with luminescent layer, this semiconductor structure is positioned on the substrate, and can produce light, fluorescence conversion layer with first wavelength, this fluorescence conversion layer is positioned on the semiconductor structure, can absorb semiconductor structure tool that luminescent layer produces first wavelength light and convert light, and the optical filter layer of tool second wavelength to, this optical filter layer is arranged between semiconductor structure and the fluorescence conversion layer, its light to this first wavelength has the penetrance more than 50%, and the light of this second wavelength is then had reflectivity more than 50%.So, after can reducing first wavelength light of sending by luminescent layer and converting second wavelength light to, return chip through backscattering and be absorbed the optical energy loss that is caused again.
Optical filter layer in the light-emitting device of the present invention is by specific one or more layers of material stack or mix, has band selective, there are lower reflectivity and penetrance to reach more than 90% to ultraviolet light, or visible light is had higher reflectivity and penetrance below 5% is only arranged.
Description of drawings
Fig. 1 is the schematic diagram of first embodiment of the invention;
Fig. 2 shows according to first embodiment of the invention by TiO
2With SiO
2The reflectance spectrum of the optical filtering material that combines;
Fig. 3 is the schematic diagram of second embodiment of the invention;
The simple symbol explanation
10,20～light-emitting device; 11～substrate; 12～semiconductor structure; 1201～electric contact; 1202～groove; 13～optical filter layer; 1301～the first optical filter layers; 1302～the second optical filter layers; And 14～fluorescence conversion layer.
Embodiment
Fig. 1 is the structural representation that shows light-emitting device in the preferred embodiment of the present invention.Disclosed light-emitting device 10 includes semiconductor structure 12, optical filter layer 13 and the fluorescence conversion layer 14 of substrate 11, tool luminescent layer.Wherein substrate 11 can be light tight substrate, and for example, the combination of semiconductor substrate, metal substrate, above-mentioned material or other light-proof material, the material of light tight substrate for example are Si, GaN/Si, GaAs or its combination.Substrate 11 also can be the material of transparent substrates, as: glass, sapphire, SiC, GaP, GaAsP, ZnSe, ZnS or ZnSSe.The semiconductor structure 12 of tool luminescent layer for example is vertical stratification (electric contact is positioned at the phase heteropleural) or horizontal structure (electric contact is positioned at the same side), and can produce the light of tool first wavelength.When first wavelength light was passed optical filter layer 13 to fluorescence conversion layer 14, fluorescence conversion layer 14 can absorb the light of tool first wavelength and be converted to the light of tool second wavelength.The light of first wavelength with can produce white light after the light of second wavelength after the conversion mixes.
In addition, as shown in Figure 1, can form groove 1202 on the substrate 11, carry out chip cutting again to form a plurality of chips to be separated out the semiconductor structure 12 more than two.Semiconductor structure 12 can carry out the step of chip cutting (chip dicing) again after optical filter layer 13 and 14 formation of fluorescence conversion layer.
Have fluorescence conversion layer 14 on the optical filter layer 13, the formation method of fluorescence conversion layer 13 comprises the following steps:
The surface characteristic upgrading of fluorescence transition material (surface modification): in the alcohol water blend of 95% (vol.) that the Yttrium aluminium garnet (YAG) type fluorescent powder body and 5 milliliters the γ-epoxy prapanol propyl-dimethyl methyl-monosilane (3-glycidoxypropyldimethoxymethylsilane) of 0.3 gram is blended in 30 milliliters, mixed solution was heated and continues stirring after 2 hours with 70 ℃, filter out the powder in this mixed liquor and cleaned with ethanol, after drying under 85 ℃ the temperature, can obtain the Yttrium aluminium garnet (YAG) type fluorescent powder body of surfaction again.
The moulding of fluorescence transition material: the Yttrium aluminium garnet (YAG) type fluorescent powder body behind the surfaction in alcohols (for example: isopropyl alcohol) is mixed, pour into and be equipped with in the container that keeps flat wafer (wafer), wait for that the Yttrium aluminium garnet (YAG) type fluorescent powder body is because of after gravity is deposited on wafer surface naturally, most supernatant liquid is drawn in suction, again this is equipped with the container that keeps flat wafer and puts into 120 ℃ of baking ovens, the Yttrium aluminium garnet (YAG) type fluorescent powder body is dried formed the fluorescence conversion layer.
The protection of fluorescence conversion layer: for cooperating follow-up light-emitting device manufacturing process, uniform deposition must anti-liquid etch and have height adhesive force at the fluorescent powder coating of wafer surface.Utilize low viscous high osmosis ultraviolet light photopolymerization resin fill on Yttrium aluminium garnet (YAG) type fluorescence conversion layer surface, after the sclerosis film forming, can reach the effect of protection fluorescence conversion layer.
Next, substrate 11 is electrically connected with semiconductor structure 12, carries out chip cutting again, can obtain having the light-emitting diode chip for backlight unit of optical filter layer and fluorescence conversion layer.
Fig. 3 is the structural representation that shows according to another preferred embodiment light-emitting device of the present invention, will use identical label with the first embodiment components identical and repeats no more.The structure of light-emitting device 20 and manufacture method thereof are as above routine described, behind the semiconductor structure 12 that forms the tool luminescent layer, available evaporation mode forms first optical filter layer 1301 thereon, deposit fluorescence conversion layer 14 again on first optical filter layer 1301, last evaporation second optical filter layer 1302 is on fluorescence conversion layer 14.
The light of 1301 pairs of these tool first wavelength of this first optical filter layer has the penetrance more than 50%, and the light of this tool second wavelength is then had reflectivity more than 50%.The light of 1302 pairs of these tool first wavelength of this second optical filter layer has the reflectivity more than 50%, and the light of this tool second wavelength is then had penetrance more than 50%.
First optical filter layer 1301 is combined by the material stack of two kinds or more kinds of tool different refractivities, and (wavelength is that 400～700nm) average reflectance can reach more than 90%, and can be almost completely penetrable for ultraviolet light to visible light.Second optical filter layer 1302 is combined by the material stack of two kinds or more kinds of tool different refractivities, makes generation to ultraviolet light reflectivity near 100% be arranged, and to the reflectivity extremely low (＜1%) of visible light.Wherein the combination of materials of two kinds of tool different refractivities preferably is chosen as the high index of refraction material of refractive index n value between 2.1-2.6, for example: TiO
2, Nb
2O
5Or Ta
2O
5Deng, with the low-refraction material of n value, for example: SiO between 1.2-1.6
2Or MgF
2Deng.Its thickness can be tens of approximately dusts () between tens of microns according to material behavior.
Though the present invention with the specific embodiment explanation as above, yet it is not in order to limit the scope of the invention.For various modifications and the change that the present invention did, neither spirit of the present invention and the scope of taking off.
Claims (24)
1. light-emitting device comprises:
Semiconductor structure comprises luminescent layer, and this luminescent layer can send the light of tool first wavelength;
The fluorescence conversion layer is positioned at this semiconductor structure top, can absorb the light of this tool first wavelength and convert the light of tool second wavelength to; With
First optical filter layer is between this semiconductor structure and this fluorescence conversion layer.
2. light-emitting device as claimed in claim 1, wherein this first optical filter layer is made up of the material that the light to different wave length has selective reflecting rate or penetrance.
3. light-emitting device as claimed in claim 2, wherein this first optical filter layer is by certain material or material stack or mix more than two kinds.
4. light-emitting device as claimed in claim 1, wherein this fluorescence conversion layer is made up of more than one organic or inorganic luminescent materials.
5. light-emitting device as claimed in claim 1, wherein this optical filter layer has penetrance more than 50% to this first wavelength light, and this second wavelength light has the reflectivity more than 50%.
6. light-emitting device as claimed in claim 1, wherein this first optical filter layer is combined by the material stack of two kinds of tool different refractivities at least, and the thickness of this first optical filter layer is about tens of dusts between tens of microns according to this material behavior.
7. light-emitting device as claimed in claim 6, a kind of material tool high index of refraction of this first optical filter layer wherein, its refractive index between 2.1-2.6, another kind of material tool low-refraction, its refractive index is between 1.2-1.6.
8. light-emitting device as claimed in claim 7, wherein the high-index material in this first optical filter layer is titanium dioxide (TiO
2), niobium pentaoxide (Nb
2O
5) or tantalum pentoxide (Ta
2O
5).
9. light-emitting device as claimed in claim 7, wherein the low-index material in this first optical filter layer is silicon dioxide (SiO
2) or bifluoride magnesium (MgF
2).
10. light-emitting device as claimed in claim 1 wherein also comprises second optical filter layer on this fluorescence conversion layer.
11. a light-emitting device comprises:
Semiconductor structure comprises luminescent layer, and this luminescent layer can send the light of tool first wavelength;
The fluorescence conversion layer is positioned at this semiconductor structure top, can absorb the light of this tool first wavelength and convert the light of tool second wavelength to;
First optical filter layer is positioned between this semiconductor structure and this fluorescence conversion layer; With
Second optical filter layer is positioned at this fluorescence conversion layer top.
12. light-emitting device as claimed in claim 11, wherein this first optical filter layer has the penetrance more than 50% and the light of this tool second wavelength is had reflectivity more than 50% light of this tool first wavelength.
13. light-emitting device as claimed in claim 11, wherein this second optical filter layer has the reflectivity more than 50% and the light of this tool second wavelength is had penetrance more than 50% light of this tool first wavelength.
14. light-emitting device as claimed in claim 11, wherein the material stack of each free two kinds of tool different refractivity of the material of the material of this first optical filter layer and this second optical filter layer combines.
15. light-emitting device as claimed in claim 14, wherein the thickness of the material of the material of this first optical filter layer and this second optical filter layer is about tens of dusts between tens of microns according to material behavior.
16. light-emitting device as claimed in claim 14, a kind of material tool high index of refraction in the material of this first optical filter layer and this second optical filter layer wherein, its refractive index between 2.1-2.6, another kind of material tool low-refraction, its refractive index is between 1.2-1.6.
17. light-emitting device as claimed in claim 14, wherein the high-index material of the material of this first optical filter layer and this second optical filter layer is titanium dioxide (TiO
2), niobium pentaoxide (Nb
2O
5) or tantalum pentoxide (Ta
2O
5).
18. light-emitting device as claimed in claim 14, wherein the low-index material in the material of this first optical filter layer and this second optical filter layer is silicon dioxide (SiO
2) or bifluoride magnesium (MgF
2).
19. a light-emitting device, its manufacture method comprises:
Substrate is provided;
Form semiconductor structure on this substrate, this semiconductor structure can produce the light of tool first wavelength;
Form the fluorescence conversion layer on semiconductor structure, this fluorescence conversion layer can absorb the light of this tool first wavelength that this semiconductor structure produces and convert the light of tool second wavelength to; And
Form optical filter layer between this semiconductor structure and this fluorescence conversion layer, this optical filter layer is by the material of selective reflectivity of the light of different wave length or penetrance is formed.
20. manufacture method as claimed in claim 19, wherein this semiconductor structure carries out follow-up making step with wafer form or chip form.
21. manufacture method as claimed in claim 19, wherein the formation of this fluorescence conversion layer is that the fluorescent powder that utilizes external force will be scattered in organic media is deposited on carrier surface, to reach the effect of even coating.
22. manufacture method as claimed in claim 21, wherein this external force is natural gravity.
23. manufacture method as claimed in claim 21, wherein the formation of this fluorescence conversion layer comprises that also the use interfacial agent carries out chemical modification to fluorescent powder surface wherein, to be increased in the decentralization in this organic media.
24. manufacture method as claimed in claim 21, wherein the formation of this fluorescence conversion layer also is included on this fluorescence conversion layer and forms protective layer, and this protective layer is made up of organic polymer, with performance protection and the effect of sticking together wafer or chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610151737A CN101140967B (en) | 2006-09-08 | 2006-09-08 | High efficient phosphor conversion light emitter and its making process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610151737A CN101140967B (en) | 2006-09-08 | 2006-09-08 | High efficient phosphor conversion light emitter and its making process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101140967A true CN101140967A (en) | 2008-03-12 |
| CN101140967B CN101140967B (en) | 2010-05-19 |
Family
ID=39192798
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200610151737A Active CN101140967B (en) | 2006-09-08 | 2006-09-08 | High efficient phosphor conversion light emitter and its making process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101140967B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101619136B (en) * | 2008-06-30 | 2011-11-23 | 柏腾科技股份有限公司 | Organic film for converting spectra and LED chip packaging module |
| CN101872741B (en) * | 2009-04-24 | 2013-06-12 | 晶元光电股份有限公司 | Dominant wavelength distribution convergent light emitting element and manufacturing method thereof |
| CN101586030B (en) * | 2008-05-20 | 2013-07-10 | 晶元光电股份有限公司 | Wavelength conversion substance and application thereof |
| CN112639544A (en) * | 2018-09-26 | 2021-04-09 | 松下知识产权经营株式会社 | Wavelength conversion member and white light output device using same |
| CN107039573B (en) * | 2016-02-04 | 2021-07-16 | 晶元光电股份有限公司 | Light emitting element and method for manufacturing the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1538534A (en) * | 2003-04-15 | 2004-10-20 | 郑荣彬 | White light illuminating device |
-
2006
- 2006-09-08 CN CN200610151737A patent/CN101140967B/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101586030B (en) * | 2008-05-20 | 2013-07-10 | 晶元光电股份有限公司 | Wavelength conversion substance and application thereof |
| CN101619136B (en) * | 2008-06-30 | 2011-11-23 | 柏腾科技股份有限公司 | Organic film for converting spectra and LED chip packaging module |
| CN101872741B (en) * | 2009-04-24 | 2013-06-12 | 晶元光电股份有限公司 | Dominant wavelength distribution convergent light emitting element and manufacturing method thereof |
| CN107039573B (en) * | 2016-02-04 | 2021-07-16 | 晶元光电股份有限公司 | Light emitting element and method for manufacturing the same |
| CN112639544A (en) * | 2018-09-26 | 2021-04-09 | 松下知识产权经营株式会社 | Wavelength conversion member and white light output device using same |
| CN112639544B (en) * | 2018-09-26 | 2022-10-28 | 松下知识产权经营株式会社 | Wavelength conversion member and white light output device using same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101140967B (en) | 2010-05-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8183584B2 (en) | High efficient phosphor-converted light emitting diode | |
| EP2629341B1 (en) | White light emitting device and lighting device | |
| US7259400B1 (en) | Nanocomposite photonic structures for solid state lighting | |
| JP6069890B2 (en) | Inorganic molded body for wavelength conversion and light emitting device | |
| KR101549736B1 (en) | Inorganic shaped body for converting wavelength and method for manufacturing the same, and light emitting device | |
| EP2437318B1 (en) | Wavelength-converted light-emitting device with uniform light-emission | |
| TWI690750B (en) | Quantum dot display device | |
| CN100438095C (en) | Light emitting diode with quasi-omnibearing reflector | |
| US20040119083A1 (en) | White-light led with dielectric omni-directional reflectors | |
| US20120132944A1 (en) | Light-emitting device, light mixing device and manufacturing methods thereof | |
| CN105423238A (en) | Wavelength conversion member, light emitting device, projector, and method of manufacturing wavelength conversion member | |
| CN104380464A (en) | Light-emitting dies incorporating wavelength-conversion materials and related methods | |
| CN105580144A (en) | Method for producing glass substrate for magnetic disc, method for producing magnetic disc, and grinding tool | |
| CN109545943B (en) | Manufacturing process of luminous element and luminous element | |
| CN101140967B (en) | High efficient phosphor conversion light emitter and its making process | |
| CN102222749A (en) | Light emitting component and module thereof | |
| CN102130282A (en) | Packaging structure and packaging method for white LED (light-emitting diode) | |
| CN101707232B (en) | LED product and manufacture method thereof | |
| CN107644929A (en) | Light emitting element | |
| CN102588752A (en) | Light emitting device | |
| CN102588816B (en) | The manufacture method of light-emitting device, light mixing device and light-emitting device | |
| CN109713112A (en) | White-light LED chip, lamp bead and White-light LED chip, lamp bead preparation method | |
| US20140231819A1 (en) | Led device | |
| CN108807648B (en) | A kind of light-emitting diode encapsulation structure and packaging method | |
| CN110556464A (en) | Light emitting diode packaging structure and packaging method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |