CN102723418A - Conformal coating white light LED chip structure possessing fluorescent characteristic passivation layer - Google Patents
Conformal coating white light LED chip structure possessing fluorescent characteristic passivation layer Download PDFInfo
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- CN102723418A CN102723418A CN2012100147083A CN201210014708A CN102723418A CN 102723418 A CN102723418 A CN 102723418A CN 2012100147083 A CN2012100147083 A CN 2012100147083A CN 201210014708 A CN201210014708 A CN 201210014708A CN 102723418 A CN102723418 A CN 102723418A
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Abstract
The invention relates to a light emitting diode assembly and especially relates to a conformal coating white light LED chip structure possessing a fluorescent characteristic passivation layer. A current white light LED design is difficult. Cost is increased. Mixed light is not easy to achieve. Brightness is insufficient and emergent light quality is poor. By using the white light LED chip structure of the invention, the above problems can be solved. The conformal coating white light LED chip structure possessing the fluorescent characteristic passivation layer comprises a secondary substrate possessing a heat dissipation characteristic, a sapphire substrate, a N-type gallium nitride epitaxial layer, a multilayer quantum well indium gallium nitride active layer, a P-type gallium nitride epitaxial layer, an indium oxide terbium fluorescence passivation layer, a negative electrode metal layer and a positive electrode metal level. The sapphire substrate is stacked on the secondary substrate possessing the heat dissipation characteristic. The conformal coating white light LED chip structure of the invention is based on the brand new structure and is suitable for manufacturing the LED.
Description
Technical field
The present invention relates to light-emitting diode component, specifically is the White-light LED chip structure that a kind of conformal coating has the fluorescent characteristic passivation layer.
Background technology
Light-emitting diode is a kind of solid-state semiconductor assembly that utilizes the various kinds of compound semiconductors material to form, and it can radiate versicolor visible light or invisible lights such as infrared ray, ultraviolet ray according to the energy gap characteristic selection of different materials.Wherein, the white light sent out of white light emitting diode is that coloured light by at least two kinds of wavelength mixes the mixed light that forms.Existing white light emitting diode can be divided into two types: the first kind is how chip-shaped light-emitting diode; Its operation principle is to send three kinds of coloured light respectively by red light-emitting diode, green light LED, blue light-emitting diode; Mix these three kinds of coloured light by lens, form white light.Its advantage is in having high-luminous-efficiency, high-color rendering; But it will be simultaneously also because of the space occurring after the coloured light mixing between spectrum; Make color unsaturated; And the operating voltage of each light-emitting diode, drive current, temperature and light decay rate are all inequality, cause difficult design, cost increase, mixed light to be difficult for thus.Second type is the fluorescent material conversion light emitting diode, and its operation principle is to utilize fluorescent material to convert blue light-emitting diode or blue light or ultraviolet light that ultraviolet light-emitting diodes produced into two wavelength or three-wavelength white light respectively.For example: the one of which blue light-emitting diode that Japanese Ri Ya chemical company developed of serving as reasons excites yellow fluorescent powder; Its advantage be cost low, make simply, its shortcoming is that the luminous efficiency because of fluorescent material does not reach the total energy conversion, can make many power conversion become heat to discharge; Cause the light-emitting diode bulk temperature higher; Because of the fluorescent material temperature rises, can make the light conversion efficiency variation and wavelength drift phenomenon occur again, simultaneously because the fluorescent material coating technique is not good; Can cause uniformity of luminance not good, colour temperature also can obviously change occur along with the visual angle difference relatively.It is two for utilizing ultraviolet light-emitting diodes to excite red, green, blue fluorescent material mix to form white light; Its advantage is that the production method cost is low, volume production is easy, evenly photochromic and do not have a colour cast phenomenon, its shortcoming is that powder mixes comparatively that difficulty, high efficiency powder are difficult for synthetic.In addition, ultraviolet light is if absorbed conversion fully, also can cause the ultraviolet light problem that leaks.Therefore, the drawback of above-mentioned fluorescent material conversion light emitting diode is: because fluorescent material is prone to aging phenomenon, the fluorescent material coating uniformity is wayward, cause the lumination of light emitting diode luminance shortage easily, influence the emergent light quality.Comprehensive above-mentioned analysis, existing white light emitting diode exists difficult design, cost increase, mixed light is difficult, luminosity is not enough, emergent light is second-rate problem because self structure limit.Therefore, be necessary the structure of existing white light emitting diode is reformed, to solve the problems referred to above that it exists.
Summary of the invention
The present invention provides a kind of conformal coating to have the White-light LED chip structure of fluorescent characteristic passivation layer in order to solve existing white light emitting diode difficult design, cost increases, mixed light is difficult for, luminosity is not enough, emergent light is second-rate problem.
The present invention adopts following technical scheme to realize: conformal coating has the White-light LED chip structure of fluorescent characteristic passivation layer, comprises secondary substrate, sapphire substrate, n type gallium nitride epitaxial loayer, multi layer quantum well InGaN active layers, P type epitaxial layer of gallium nitride, indium oxide terbium fluorescence passivation layer, negative electrode metal level and positive electrode metal level with heat dissipation characteristics; Wherein, sapphire substrate is stacked on the secondary substrate with heat dissipation characteristics; The n type gallium nitride epitaxial layer stack is on sapphire substrate; Multi layer quantum well InGaN active layers is stacked on the n type gallium nitride epitaxial loayer, and the n type gallium nitride epitaxial loayer partly is exposed to outside the multi layer quantum well InGaN active layers; P type epitaxial layer of gallium nitride is stacked on the multi layer quantum well InGaN active layers; Indium oxide terbium fluorescence passivation layer is stacked on the exposed portion and P type epitaxial layer of gallium nitride of n type gallium nitride epitaxial loayer, and indium oxide terbium fluorescence passivation layer deposition is in the sidewall of sapphire substrate, the sidewall of n type gallium nitride epitaxial loayer, the sidewall of multi layer quantum well InGaN active layers, the sidewall of P type epitaxial layer of gallium nitride; Negative electrode metal level storehouse is on the exposed portion of n type gallium nitride epitaxial loayer; Positive electrode metal level storehouse is on P type epitaxial layer of gallium nitride, and the positive electrode metal level is connected with indium oxide terbium fluorescence passivation layer.Said secondary substrate, sapphire substrate, n type gallium nitride epitaxial loayer, multi layer quantum well InGaN active layers, P type epitaxial layer of gallium nitride, indium oxide terbium fluorescence passivation layer, negative electrode metal level, positive electrode metal level with heat dissipation characteristics is existing known configurations.
During work, the negative electrode metal level is connected external power source with the positive electrode metal level, and mutually combining in multi layer quantum well InGaN active layers from the hole of P type epitaxial layer of gallium nitride and n type gallium nitride epitaxial loayer and electronics emits beam.An issued light line part penetrates P type epitaxial layer of gallium nitride and is stacked over the indium oxide terbium fluorescence passivation layer on the P type epitaxial layer of gallium nitride, and excites indium oxide terbium fluorescence passivation layer.Another part light penetration is deposited on the indium oxide terbium fluorescence passivation layer of sidewall of sidewall, the P type epitaxial layer of gallium nitride of sidewall, the multi layer quantum well InGaN active layers of sidewall, the n type gallium nitride epitaxial loayer of sapphire substrate, and excites indium oxide terbium fluorescence passivation layer.Two parts light mixes conversion by this and forms white light.Compare with existing white light emitting diode; Conformal coating of the present invention has the White-light LED chip structure of fluorescent characteristic passivation layer based on brand-new structure; Solved the problem that existing white light emitting diode difficult design, cost increase, mixed light is difficult for, luminosity is not enough, emergent light is second-rate; Specific as follows: one of which, to compare with how chip-shaped light-emitting diode, the White-light LED chip structure that conformal coating of the present invention has the fluorescent characteristic passivation layer need not to adopt a plurality of light-emitting diode mixed lights; Therefore avoided coloured light to mix between the spectrum of back and the space occurred, and then made that color is more saturated, design is simpler, cost is lower, mixed light is easier.They are two years old; Compare with the fluorescent material conversion light emitting diode; The White-light LED chip structure that conformal coating of the present invention has the fluorescent characteristic passivation layer need not to add fluorescent powder at LED surface; Therefore avoid fluorescent material aging phenomenon and the fluorescent material coating uniformity not good, and then improved the luminosity and the emergent light quality of light-emitting diode.
The present invention is based on brand-new structure; Efficiently solve existing white light emitting diode difficult design, cost increases, mixed light is difficult for, luminosity is not enough, emergent light is second-rate problem; Be applicable to the manufacturing of light-emitting diode, be particularly useful for the manufacturing of white light emitting diode.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Fig. 2 is an electroluminescence spectrogram of the present invention.
Among the figure: 1-has the secondary substrate of heat dissipation characteristics, 2-sapphire substrate, 3-N type epitaxial layer of gallium nitride, 4-multi layer quantum well InGaN active layers, 5-P type epitaxial layer of gallium nitride, 6-indium oxide terbium fluorescence passivation layer, 7-negative electrode metal level, 8-positive electrode metal level.
Embodiment
Conformal coating has the White-light LED chip structure of fluorescent characteristic passivation layer, comprises secondary substrate 1, sapphire substrate 2, n type gallium nitride epitaxial loayer 3, multi layer quantum well InGaN active layers 4, P type epitaxial layer of gallium nitride 5, indium oxide terbium fluorescence passivation layer 6, negative electrode metal level 7 and positive electrode metal level 8 with heat dissipation characteristics; Wherein, sapphire substrate 2 is stacked on the secondary substrate 1 with heat dissipation characteristics; N type gallium nitride epitaxial loayer 3 is stacked on the sapphire substrate 2; Multi layer quantum well InGaN active layers 4 is stacked on the n type gallium nitride epitaxial loayer 3, and n type gallium nitride epitaxial loayer 3 parts are exposed to outside the multi layer quantum well InGaN active layers 4; P type epitaxial layer of gallium nitride 5 is stacked on the multi layer quantum well InGaN active layers 4; Indium oxide terbium fluorescence passivation layer 6 is stacked on the exposed portion and P type epitaxial layer of gallium nitride 5 of n type gallium nitride epitaxial loayer 3, and indium oxide terbium fluorescence passivation layer 6 is deposited on the sidewall of sapphire substrate 2, the sidewall of n type gallium nitride epitaxial loayer 3, the sidewall of multi layer quantum well InGaN active layers 4, the sidewall of P type epitaxial layer of gallium nitride 5; Negative electrode metal level 7 is stacked on the exposed portion of n type gallium nitride epitaxial loayer 3; Positive electrode metal level 8 is stacked on the P type epitaxial layer of gallium nitride 5, and positive electrode metal level 8 is connected with indium oxide terbium fluorescence passivation layer 6;
Said secondary substrate 1 with heat dissipation characteristics adopts copper or aluminium nitride or silicon to process;
Said sapphire substrate 2 adopts sapphire to process;
Said indium oxide terbium fluorescence passivation layer 6 adopts indium oxide and terbium to process;
The proportion of indium oxide and terbium is 95:5-5:95;
Said indium oxide terbium fluorescence passivation layer 6 utilizes the electron beam evaporation plating system to be prepared from conformal coating method.
During practical implementation, as shown in Figure 2, excitation current (100mA) through the time, the spectrum that conformal coating of the present invention has a White-light LED chip structure of fluorescent characteristic passivation layer is contained whole visible spectrum zone, spectral region is 300 nm ~ 800 nm.Three main peak values are arranged among Fig. 2: first peak value is positioned near the 385nm; It is positioned at a very strong wave band; It mainly is the main peak value that multi layer quantum well InGaN active layers is emitted; In the middle of second peak value is positioned at than broadband (wave-length coverage is about 450 nm ~ 700 nm), mainly be that indium oxide terbium fluorescence passivation layer produces, the 3rd peak value is positioned at the second harmonic wave band (wave-length coverage is about crest 750 nm ~ 800 nm) due to the nonlinear load.
Claims (10)
1. a conformal coating has the White-light LED chip structure of fluorescent characteristic passivation layer, it is characterized in that: comprise secondary substrate (1), sapphire substrate (2), n type gallium nitride epitaxial loayer (3), multi layer quantum well InGaN active layers (4), P type epitaxial layer of gallium nitride (5), indium oxide terbium fluorescence passivation layer (6), negative electrode metal level (7) and positive electrode metal level (8) with heat dissipation characteristics; Wherein, sapphire substrate (2) is stacked on the secondary substrate (1) with heat dissipation characteristics; N type gallium nitride epitaxial loayer (3) is stacked on the sapphire substrate (2); Multi layer quantum well InGaN active layers (4) is stacked on the n type gallium nitride epitaxial loayer (3), and n type gallium nitride epitaxial loayer (3) part is exposed to outside the multi layer quantum well InGaN active layers (4); P type epitaxial layer of gallium nitride (5) is stacked on the multi layer quantum well InGaN active layers (4); Indium oxide terbium fluorescence passivation layer (6) is stacked on the exposed portion and P type epitaxial layer of gallium nitride (5) of n type gallium nitride epitaxial loayer (3), and indium oxide terbium fluorescence passivation layer (6) is deposited on the sidewall of sapphire substrate (2), the sidewall of n type gallium nitride epitaxial loayer (3), the sidewall of multi layer quantum well InGaN active layers (4), the sidewall of P type epitaxial layer of gallium nitride (5); Negative electrode metal level (7) is stacked on the exposed portion of n type gallium nitride epitaxial loayer (3); Positive electrode metal level (8) is stacked on the P type epitaxial layer of gallium nitride (5), and positive electrode metal level (8) is connected with indium oxide terbium fluorescence passivation layer (6).
2. conformal coating according to claim 1 has the White-light LED chip structure of fluorescent characteristic passivation layer, it is characterized in that: said secondary substrate (1) with heat dissipation characteristics adopts copper or aluminium nitride or silicon to process.
3. conformal coating according to claim 1 and 2 has the White-light LED chip structure of fluorescent characteristic passivation layer, it is characterized in that: said sapphire substrate (2) adopts sapphire to process.
4. conformal coating according to claim 1 and 2 has the White-light LED chip structure of fluorescent characteristic passivation layer, it is characterized in that: said indium oxide terbium fluorescence passivation layer (6) adopts indium oxide and terbium to process.
5. conformal coating according to claim 3 has the White-light LED chip structure of fluorescent characteristic passivation layer, it is characterized in that: said indium oxide terbium fluorescence passivation layer (6) adopts indium oxide and terbium to process.
6. conformal coating according to claim 4 has the White-light LED chip structure of fluorescent characteristic passivation layer, it is characterized in that: the proportion of indium oxide and terbium is 95:5-5:95.
7. conformal coating according to claim 5 has the White-light LED chip structure of fluorescent characteristic passivation layer, it is characterized in that: the proportion of indium oxide and terbium is 95:5-5:95.
8. conformal coating according to claim 1 and 2 has the White-light LED chip structure of fluorescent characteristic passivation layer, it is characterized in that: said indium oxide terbium fluorescence passivation layer (6) utilizes the electron beam evaporation plating system to be prepared from conformal coating method.
9. conformal coating according to claim 3 has the White-light LED chip structure of fluorescent characteristic passivation layer, it is characterized in that: said indium oxide terbium fluorescence passivation layer (6) utilizes the electron beam evaporation plating system to be prepared from conformal coating method.
10. conformal coating according to claim 7 has the White-light LED chip structure of fluorescent characteristic passivation layer, it is characterized in that: said indium oxide terbium fluorescence passivation layer (6) utilizes the electron beam evaporation plating system to be prepared from conformal coating method.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110054150A (en) * | 2019-04-29 | 2019-07-26 | 西安交通大学 | A kind of calibration nanometer geometric sense standard jig and preparation method thereof |
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- 2012-01-18 CN CN2012100147083A patent/CN102723418A/en active Pending
Patent Citations (4)
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| US6603146B1 (en) * | 1999-10-07 | 2003-08-05 | Sharp Kabushiki Kaisha | Gallium nitride group compound semiconductor light-emitting device |
| US20040079955A1 (en) * | 1999-12-21 | 2004-04-29 | Kabushiki Kaisha Toshiba | Semiconductor light emitting element and manufacturing method thereof |
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| CN110054150A (en) * | 2019-04-29 | 2019-07-26 | 西安交通大学 | A kind of calibration nanometer geometric sense standard jig and preparation method thereof |
| WO2020220931A1 (en) * | 2019-04-29 | 2020-11-05 | 西安交通大学 | Nano-geometric standard template for calibration and preparation method therefor |
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