CN101860342A - SAW (Surface Acoustic Wave) device of bus bar doubled as reflecting grating type IDT (Interdigital Transducer) structure - Google Patents
SAW (Surface Acoustic Wave) device of bus bar doubled as reflecting grating type IDT (Interdigital Transducer) structure Download PDFInfo
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- CN101860342A CN101860342A CN201010159715A CN201010159715A CN101860342A CN 101860342 A CN101860342 A CN 101860342A CN 201010159715 A CN201010159715 A CN 201010159715A CN 201010159715 A CN201010159715 A CN 201010159715A CN 101860342 A CN101860342 A CN 101860342A
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Abstract
The invention discloses an SAW (Surface Acoustic Wave) device of a bus bar doubled as a reflecting grating type IDT (Interdigital Transducer) structure, comprising a surface acoustic wave filter and a surface acoustic wave resonator. The surface acoustic wave filter and the surface acoustic wave resonator comprise a packaging shell and tube cores of the surface acoustic wave filter and the surface acoustic wave resonator, wherein the two tube cores are electrically connected in the packing shell by using a conducting wire; and the tube cores comprise an input interdigital transducer with a bus bar doubled as a reflecting grating and an output interdigital transducer with a bus bar doubled as a reflecting grating, and the input interdigital transducer and the output interdigital transducer are etched on the surface of a piezoelectric monocrystal or a piezoelectric film. The bus bar doubled as the reflecting grating is in a triangular, circular or elliptic structure. Under the condition of same tube core areas, interdigital numbers and coupling hole diameters of the surface acoustic wave filter and the surface acoustic wave resonator with the IDT structure design, the sidelobe suppression is improved by more than 9dB, and the insertion loss is lowered by more than 12dB.
Description
Technical field
The present invention relates to a kind of SAW (Surface Acoustic Wave) device, particularly a kind of SAW (Surface Acoustic Wave) device that comprises surface acoustic wave bandpass filter or SAW (Surface Acoustic Wave) resonator.
Background technology
Owing to do not have symmetrical centre in the crystal structure of piezoelectric (piezoelectric monocrystal or piezoelectric membrane), when on piezoelectric, applying voltage, can cause that the lattice in piezoelectric monocrystal or the piezoelectric membrane produces deformation.If added voltage will produce surface acoustic wave (SurfaceAcousticWave is called for short SAW) for the voltage signal of input in piezoelectric monocrystal or piezoelectric membrane lattice surface, this SAW is a kind of along piezoelectric monocrystal or the propagation of piezoelectric membrane surface, and amplitude increases and the elastic wave of rapid decay with the degree of depth of going deep into crystalline material.
The filtering of Surface Acoustic Wave Filter or SAW (Surface Acoustic Wave) resonator, the realization of resonance function are based on the surface acoustic wave that forms in piezoelectric monocrystal or the piezoelectric membrane lattice surface.Surface Acoustic Wave Filter or SAW (Surface Acoustic Wave) resonator comprise its encapsulating housing, are positioned over the interior Surface Acoustic Wave Filter of encapsulating housing or the tube core of SAW (Surface Acoustic Wave) resonator, and tube core is electrically connected with lead in encapsulating housing with the outer lead of encapsulating housing.The tube core of described Surface Acoustic Wave Filter or SAW (Surface Acoustic Wave) resonator comprises input interdigital transducer (interdigitaltransducer is called for short IDT) and the output interdigital transducer (position that occurs IDT to descend to the mortal world all is meant interdigital transducer) that is etched in piezoelectric monocrystal or piezoelectric membrane surface.Elementary cell wherein is the structure of input IDT and output IDT.The manufacture method of this structure is: at piezoelectric (LiNbO for example
3, ZnO and AlN) and the surface is by evaporation or sputter layer of metal aluminium or copper, and the mask pattern with two IDT designing utilizes photoetching method to be etched in substrate surface.The input interdigital transducer utilizes the inverse piezoelectric effect of crystal to convert the electrical signal to surface acoustic wave (SAW), propagates on substrate surface, and through after certain delay, output transducer utilizes piezoelectric effect that surface wave (SAW) conversion of signals is become the signal of telecommunication.The function of Surface Acoustic Wave Filter or SAW (Surface Acoustic Wave) resonator is that the signal of telecommunication is handled, and comprises that filtering, time-delay, pulse compression and broadening, vibration frequency stabilization, decoding and coding, convolution are relevant, analysis of spectrum etc.Described input IDT and output IDT and piezoelectric substrate constitute the transmission channel of surface acoustic wave jointly, different IDT structures has different surface acoustic wave transmission characteristics, therefore, the design of Surface Acoustic Wave Filter or SAW (Surface Acoustic Wave) resonator mainly is to input, output interdigital transducer structure Design.
The main feature of SAW device (comprising Surface Acoustic Wave Filter, SAW (Surface Acoustic Wave) resonator) is that design flexibility is big, analog/digital is compatible, group delay time deviation and good, the optional wide frequency range of frequency selectivity, the input and output impedance error is little, loss is little, anti-electromagnetic interference (EMI) ability is strong, reliability is high, the device volume made is little, in light weight, be suitable for microencapsulated.Its volume, weight are respectively about 1/40 and 1/30 of Ceramic Dielectric Filter, and can realize the function of multiple complexity.The feature and advantage of SAW filter have adapted to the requirement of Modern Communication System equipment and compactization of portable phone and high frequencyization, digitlization, high-performance, aspect such as highly reliable.Therefore, start the climax of a new research SAW device again.The research focus is high frequency, low Insertion Loss SAW filter.
IDT is the core of SAW device, the parameter of forming IDT mainly contains: electrode logarithm (periodicity N), IDT sound aperture (electrode overlap length W), interdigital electrode width a, interdigital electrode is b and interdigital electrode metal layer thickness h at interval, and these have determined the centre frequency f of this transducer jointly
0
The tube core of the Surface Acoustic Wave Filter (or SAW (Surface Acoustic Wave) resonator) that existing (or claim traditional or claim the band reflecting grating) IDT structure etching is made in the piezoelectric substrate surface is (encapsulating housing of Surface Acoustic Wave Filter or SAW (Surface Acoustic Wave) resonator and domain do not draw among the figure) as shown in Figure 1, and the particular location of input, output interdigital transducer and reflecting grating is understood in the figure acceptance of the bid.Fig. 2 has indicated the amplitude-frequency characteristic of the Surface Acoustic Wave Filter (or SAW (Surface Acoustic Wave) resonator) that existing (or claim traditional or claim the band reflecting grating) IDT structure etching is made in the piezoelectric substrate surface, its main lobe decays to 4dB, first secondary lobe, second secondary lobe and the 3rd side lobe attenuation are respectively 28dB, 39dB and 46dB illustrate that the outer steepness of its waveform band is undesirable.Fig. 3 has indicated the Surface Acoustic Wave Filter that existing (or claim traditional or claim the band reflecting grating) IDT structure etching is made in the piezoelectric substrate surface or the insertion loss of SAW (Surface Acoustic Wave) resonator, and its IL value illustrates that up to 28dB its insertion loss is bigger.
Summary of the invention
The technical problem to be solved in the present invention is, a kind of SAW device of busbar double as reflecting grating type IDT structure is provided, not good with the Sidelobe Suppression that overcomes Surface Acoustic Wave Filter that prior art exists or SAW (Surface Acoustic Wave) resonator, insert loss reach greatly the outer steepness of waveform band undesirable wait not enough.
Technical scheme of the present invention is as follows: it comprises Surface Acoustic Wave Filter or SAW (Surface Acoustic Wave) resonator, Surface Acoustic Wave Filter or SAW (Surface Acoustic Wave) resonator include encapsulating housing and are positioned over the interior Surface Acoustic Wave Filter of encapsulating housing or the tube core of SAW (Surface Acoustic Wave) resonator, and tube core is electrically connected with lead in encapsulating housing; Described tube core, here refer to the tube core of Surface Acoustic Wave Filter or the tube core of SAW (Surface Acoustic Wave) resonator, the tube core of Surface Acoustic Wave Filter or the tube core of SAW (Surface Acoustic Wave) resonator comprise the input interdigital transducer of the busbar double as reflecting grating that is etched in piezoelectric monocrystal or piezoelectric membrane surface and the output interdigital transducer of busbar double as reflecting grating.
Described busbar double as reflecting grating adopts triangle, circle or ellipsoidal structure.
Described busbar double as reflecting grating adopts triangular structure, and this triangle is an isosceles triangle, and the length L on its limit, middle part of the side is no more than 35% of input interdigital transducer and output interdigital transducer tube core length sum.
Described busbar double as reflecting grating adopts triangular structure, and this triangle is an isosceles triangle, and the half-angle of drift angle (or a waist limit and horizontal angle) is θ.
Described busbar double as reflecting grating adopts circular configuration, radius of circle R be no more than Surface Acoustic Wave Filter tube core length 35% or sound surface resonance organ pipe core length 35%.
Described busbar double as reflecting grating adopts ellipsoidal structure, oval major semiaxis A be no more than Surface Acoustic Wave Filter tube core length 40% or sound surface resonance organ pipe core length 40%.
In the above technical scheme, acoustic surface wave propagation coupling place at input, output transducer still keeps the rectangle aperture, to improve coupling efficiency, like this, both can reduce die area, be convenient to the weighting of interdigital change mark again, and reduce and insert loss, improve Sidelobe Suppression efficient, squareness factor improves in the bandwidth that requires.When theory designs, with traditional
Function model improves, and is about to an interdigital finger and is seeing that it is a usefulness that an excitaton source is modified into an excitaton source
The Ji Yuan that function model is represented, like this, can both use the interdigital finger that the interdigital finger or the shape of different length changes accurately interdigital can a composition to several or tens Ji Yuan by one
Function model is represented, improves design accuracy.
Compare with existing (or claim traditional or claim the band reflecting grating) IDT structure, adopt IDT structure of the present invention (the triangle IDT structure that comprises busbar double as reflecting grating, the circular IDT structure of busbar double as reflecting grating, the oval IDT structure of busbar double as reflecting grating) She Ji Surface Acoustic Wave Filter (or SAW (Surface Acoustic Wave) resonator), at die area, interdigital number is under the identical condition in coupling aperture, its Sidelobe Suppression has improved more than the 9dB, inserts loss and has reduced more than the 12dB.Perhaps in Sidelobe Suppression, insert loss and require under the identical situation, reduce with the die area of the surface wave filter (or surface resonator) of these three kinds of IDT structural designs.
Description of drawings
Fig. 1: the Surface Acoustic Wave Filter of making in piezoelectric substrate (or piezoelectric membrane) surface for existing (or claim traditional or claim the band reflecting grating) IDT structure etching or the tube core schematic diagram (contour line of encapsulating housing and piezoelectric substrate or piezoelectric membrane does not draw) of SAW (Surface Acoustic Wave) resonator;
Fig. 2: the Surface Acoustic Wave Filter of making in piezoelectric substrate or piezoelectric membrane surface for existing (or claim traditional or claim the band reflecting grating) IDT structure etching or the amplitude-frequency characteristic schematic diagram of SAW (Surface Acoustic Wave) resonator;
Fig. 3: the Surface Acoustic Wave Filter of making in piezoelectric substrate or piezoelectric membrane surface for existing (or claim traditional or claim the band reflecting grating) IDT structure etching or the insertion loss schematic diagram of SAW (Surface Acoustic Wave) resonator;
Fig. 4: the Surface Acoustic Wave Filter of making in piezoelectric substrate or piezoelectric membrane surface for the triangle IDT structure etching of busbar double as reflecting grating of the present invention or the tube core schematic diagram (encapsulating housing and piezoelectric substrate or piezoelectric membrane contour line do not draw) of SAW (Surface Acoustic Wave) resonator;
Fig. 5: Surface Acoustic Wave Filter or the SAW (Surface Acoustic Wave) resonator amplitude-frequency characteristic schematic diagram made in piezoelectric substrate or piezoelectric membrane surface for the triangle IDT structure etching of busbar double as reflecting grating of the present invention;
Fig. 6: the Surface Acoustic Wave Filter of making in piezoelectric substrate or piezoelectric membrane surface for the triangle IDT structure etching of busbar double as reflecting grating of the present invention or the insertion loss schematic diagram of SAW (Surface Acoustic Wave) resonator;
Fig. 7: the Surface Acoustic Wave Filter of making in piezoelectric substrate or piezoelectric membrane surface for the circular IDT structure etching of busbar double as reflecting grating of the present invention or the tube core schematic diagram (contour line of encapsulating housing and piezoelectric substrate or piezoelectric membrane does not draw) of SAW (Surface Acoustic Wave) resonator;
Fig. 8: the Surface Acoustic Wave Filter of making in piezoelectric substrate or piezoelectric membrane surface for the circular IDT structure etching of busbar double as reflecting grating of the present invention or the amplitude-frequency characteristic schematic diagram of SAW (Surface Acoustic Wave) resonator;
Fig. 9: for the circular IDT structure etching of busbar double as reflecting grating of the present invention make in piezoelectric substrate or piezoelectric membrane surface Surface Acoustic Wave Filter or the insertion loss schematic diagram of SAW (Surface Acoustic Wave) resonator;
Figure 10: the Surface Acoustic Wave Filter of making in piezoelectric substrate or piezoelectric membrane surface for the oval IDT structure etching of busbar double as reflecting grating of the present invention or the tube core schematic diagram (encapsulating housing and piezoelectric substrate or piezoelectric membrane contour line do not draw) of SAW (Surface Acoustic Wave) resonator;
Figure 11: the Surface Acoustic Wave Filter of making in piezoelectric substrate or piezoelectric membrane surface for the oval IDT structure etching of busbar double as reflecting grating of the present invention or the amplitude-frequency characteristic schematic diagram of SAW (Surface Acoustic Wave) resonator;
Figure 12: the Surface Acoustic Wave Filter of making in piezoelectric substrate or piezoelectric membrane surface for the oval IDT structure etching of busbar double as reflecting grating of the present invention or the insertion loss schematic diagram of SAW (Surface Acoustic Wave) resonator.
Embodiment
Embodiments of the invention:
Existing band reflecting grating type IDT structure (tube core structure) as shown in Figure 1, mark among the figure 2 expression input interdigital transducers; Mark 3 expression output interdigital transducers among the figure; Mark 4 expression reflecting gratings among the figure; Structure chart in the mark 5 expression frame of broken lines among the figure for existing (or claim traditional or claim the band reflecting grating) IDT structure etching in the tube core of piezoelectric substrate or the surperficial Surface Acoustic Wave Filter (or SAW (Surface Acoustic Wave) resonator) of making of piezoelectric membrane, (encapsulating housing and piezoelectric substrate or piezoelectric membrane contour line do not draw); The width of interdigital electrode is a, and electrode gap is b.At the a=b=7.5 micron, the Surface Acoustic Wave Filter that designs during interdigital logarithm N=30 or the amplitude-frequency characteristic of SAW (Surface Acoustic Wave) resonator and insert loss respectively as Fig. 2, shown in Figure 3.Substrate material is the AlN piezoelectric membrane of C axle preferrel orientation (100).[annotate: providing existing (or claim traditional or claim the band reflecting grating) IDT structure herein, is in order to compare with new construction of the present invention].
The triangle IDT tube core structure of embodiment one, busbar double as reflecting grating as shown in Figure 4, the figure in mark among the figure 1 expression frame of broken lines is the IDT of busbar double as reflecting grating (being again the part of tube core structure simultaneously); Mark 2 expression input interdigital transducers among the figure; Mark 3 expression output interdigital transducers among the figure; Structure chart in the mark 4 expression frame of broken lines among the figure is the tube core (contour line of encapsulating housing, domain and piezoelectric substrate or piezoelectric membrane does not draw) of the IDT etching of the triangular structure of the busbar double as reflecting grating of the present invention Surface Acoustic Wave Filter (or SAW (Surface Acoustic Wave) resonator) of making in piezoelectric substrate or piezoelectric membrane surface.The width of interdigital electrode is a, and electrode gap is b, and a+b represents the distance between two busbars (double as reflecting grating).In input IDT, sound aperture changes.At a, b one regularly, the length of the θ angle decision L among the figure has also just determined to be used in the triangular structure to become the quantity of the finger of mark weighting, can require decide according to specific design.Its scope is: the value of L can not surpass adopt 35% of the input interdigital transducer of the Surface Acoustic Wave Filter of triangular structure IDT of busbar double as reflecting grating or SAW (Surface Acoustic Wave) resonator and output interdigital transducer tube core length sum.
At the a=b=7.5 micron, interdigital logarithm N=30, the θ angle be 45 spend time design Surface Acoustic Wave Filter (or SAW (Surface Acoustic Wave) resonator) amplitude-frequency characteristic and insert the loss result respectively as Fig. 5, shown in Figure 6.Substrate material is the AlN piezoelectric membrane (substrate material can be any substrate or film that piezoelectric effect is arranged) of C axle preferrel orientation (100).
The circular IDT tube core structure of embodiment two, busbar double as reflecting grating as shown in Figure 7, the figure in mark among the figure 1 expression frame of broken lines is the IDT of busbar double as reflecting grating (being again the part of tube core structure simultaneously); Mark 2 expression input interdigital transducers among the figure; Mark 3 expression output interdigital transducers among the figure; Structure chart in the mark 4 expression frame of broken lines among the figure is the tube core (contour line of encapsulating housing, domain and piezoelectric substrate or piezoelectric membrane does not draw) of the IDT etching of the circular configuration of the busbar double as reflecting grating of the present invention Surface Acoustic Wave Filter (or SAW (Surface Acoustic Wave) resonator) of making in piezoelectric substrate or piezoelectric membrane surface.The width of interdigital electrode is a, and electrode gap is b, and a+b represents the distance between two busbars (double as reflecting grating).In input IDT, sound aperture changes.The width of interdigital electrode is a, and electrode gap is b, and in the IDT of circular configuration, sound aperture changes.At a, b one regularly, R(radius of circle among the figure) determined to be used among the circular configuration IDT to become the quantity of the finger of mark weighting, the scope of R is: the value of R can not surpass adopt busbar double as reflecting grating circular configuration IDT tube core length 35%, can require decide according to specific design.At the a=b=7.5 micron, the Surface Acoustic Wave Filter that designs during interdigital logarithm N=30 or the amplitude-frequency characteristic of SAW (Surface Acoustic Wave) resonator and insert loss respectively as Fig. 8, shown in Figure 9.Substrate material is the AlN piezoelectric membrane of C axle preferrel orientation (100).
The oval IDT tube core structure of embodiment three, busbar double as reflecting grating as shown in figure 10, the figure in mark among the figure 1 expression frame of broken lines is the IDT of busbar double as reflecting grating (being again the part of tube core structure simultaneously); The ellipse input interdigital transducer of the mark 2 expression busbar double as reflecting gratings among the figure; The oval output interdigital transducer of the mark 3 expression busbar double as reflecting gratings among the figure; Structure chart in the mark 4 expression frame of broken lines among the figure is the IDT etching of the ellipsoidal structure of the busbar double as reflecting grating of the present invention Surface Acoustic Wave Filter of making in piezoelectric substrate (or piezoelectric membrane) surface or the tube core (contour line of encapsulating housing, domain and piezoelectric substrate or piezoelectric membrane does not draw) of SAW (Surface Acoustic Wave) resonator.The width of interdigital electrode is a, and electrode gap is b, and a+b represents the distance between two busbars (double as reflecting grating).In the IDT of circular configuration, sound aperture changes.At a, b one regularly, A(among the figure is oval major semiaxis) determined to be used among the ellipsoidal structure IDT to become the quantity of the finger of mark weighting, the span of A is: the value of A can not surpass 40% of the Surface Acoustic Wave Filter of the ellipsoidal structure IDT that adopts busbar double as reflecting grating or SAW (Surface Acoustic Wave) resonator tube core length.Can require to decide according to specific design.
At the a=b=7.5 micron, the Surface Acoustic Wave Filter that designs during interdigital logarithm N=30, the amplitude-frequency characteristic of resonator and insert loss respectively as Figure 11, illustrated in Figure 12.Substrate material is the AlN piezoelectric membrane of C axle preferrel orientation (100).
Three kinds of IDT structure SAW of the busbar double as reflecting grating of the invention described above or SAW (Surface Acoustic Wave) resonator see Table 1 with the characteristic contrast situation of existing (or claim traditional or claim the band reflecting grating) IDT membrane structure-borne noise surface wave filter or SAW (Surface Acoustic Wave) resonator.
Table 1
For the SAW device, in theory, insertion loss and main peak decay are the smaller the better, and side lobe attenuation (Sidelobe Suppression) is the bigger the better, and the squareness factor of the big more explanation device of Sidelobe Suppression is good more, and SAW device is desired just for this.Data can be found out from table 1, the main peak decay of several IDT structures of busbar double as reflecting grating, and Sidelobe Suppression and insertion loss all are better than the band reflecting grating type IDT structure of prior art.
Claims (6)
1. the SAW device of a busbar double as reflecting grating type IDT structure, it comprises Surface Acoustic Wave Filter or SAW (Surface Acoustic Wave) resonator, Surface Acoustic Wave Filter or SAW (Surface Acoustic Wave) resonator include encapsulating housing and are positioned over the interior Surface Acoustic Wave Filter of encapsulating housing or the tube core of SAW (Surface Acoustic Wave) resonator, and tube core is electrically connected with lead in encapsulating housing with the outer lead of encapsulating housing; It is characterized in that: described tube core comprises the input interdigital transducer of the busbar double as reflecting grating that is etched in piezoelectric monocrystal or piezoelectric membrane surface and the output interdigital transducer of busbar double as reflecting grating.
2. the SAW device of busbar double as reflecting grating type IDT structure according to claim 1 is characterized in that: described busbar double as reflecting grating adopts triangle, circle or ellipsoidal structure.
3. the SAW device of busbar double as reflecting grating type IDT structure according to claim 2, it is characterized in that: described busbar double as reflecting grating adopts triangular structure, this triangle is an isosceles triangle, and the length L on its limit, middle part of the side is no more than 35% of input interdigital transducer and output interdigital transducer tube core length sum.
4. the SAW device of busbar double as reflecting grating type IDT structure according to claim 2, it is characterized in that: described busbar double as reflecting grating adopts triangular structure, this triangle is an isosceles triangle, the half-angle of drift angle is θ, the θ angle requires to change according to weighting, and the length that L is satisfied in the variation at θ angle can not surpass 35% of input interdigital transducer and output interdigital transducer tube core length sum.
5. the SAW device of busbar double as reflecting grating type IDT structure according to claim 2 is characterized in that: described busbar double as reflecting grating adopts circular configuration, and radius of circle R is no more than 35% of Surface Acoustic Wave Filter or sound surface resonance organ pipe core length.
6. the SAW device of busbar double as reflecting grating type IDT structure according to claim 2, it is characterized in that: described busbar double as reflecting grating adopts ellipsoidal structure, and oval major semiaxis is no more than 40% of Surface Acoustic Wave Filter or sound surface resonance organ pipe core length.
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| CN 201010159715 CN101860342B (en) | 2010-04-29 | 2010-04-29 | SAW (Surface Acoustic Wave) device of bus bar doubled as reflecting grating type IDT (Interdigital Transducer) structure |
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| CN103078603A (en) * | 2013-02-06 | 2013-05-01 | 中国电子科技集团公司第二十六研究所 | Surface acoustic wave filter with high power endurance |
| CN106067777A (en) * | 2016-08-08 | 2016-11-02 | 贵州民族大学 | A kind of planar structure gain compensation type SAW device and preparation method |
| CN106100603A (en) * | 2016-08-08 | 2016-11-09 | 贵州民族大学 | A kind of stereochemical structure gain compensation type SAW device and preparation method |
| CN106253874A (en) * | 2016-09-22 | 2016-12-21 | 深圳华远微电科技有限公司 | A kind of RFID chip based on SAW resonator and encapsulating structure thereof |
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| CN109075765A (en) * | 2016-06-01 | 2018-12-21 | 追踪有限公司 | The SAW filter inhibited with jamming pattern |
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| CN106100603A (en) * | 2016-08-08 | 2016-11-09 | 贵州民族大学 | A kind of stereochemical structure gain compensation type SAW device and preparation method |
| CN106067777A (en) * | 2016-08-08 | 2016-11-02 | 贵州民族大学 | A kind of planar structure gain compensation type SAW device and preparation method |
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| CN109787579B (en) * | 2019-01-22 | 2020-04-03 | 成都频岢微电子有限公司 | SAW resonator with reduce spurious function |
| CN113346859A (en) * | 2021-07-07 | 2021-09-03 | 无锡中微晶园电子有限公司 | Surface acoustic wave resonator with high Q value and preparation method thereof |
| CN114421923B (en) * | 2022-01-11 | 2023-08-01 | 无锡市好达电子股份有限公司 | High-performance surface acoustic wave filter |
| CN114421923A (en) * | 2022-01-11 | 2022-04-29 | 无锡市好达电子股份有限公司 | High-performance surface acoustic wave filter |
| CN114268294A (en) * | 2022-03-03 | 2022-04-01 | 深圳新声半导体有限公司 | SAW device including hybrid weighting type reflection grating and hybrid weighting type reflection grating |
| CN114268294B (en) * | 2022-03-03 | 2022-06-17 | 深圳新声半导体有限公司 | SAW device including hybrid weighting type reflection grating and hybrid weighting type reflection grating |
| CN114744976A (en) * | 2022-04-19 | 2022-07-12 | 四川大学 | Method for effectively improving excitation efficiency of interdigital transducer |
| CN114744976B (en) * | 2022-04-19 | 2023-06-23 | 四川大学 | Method for effectively improving excitation efficiency of interdigital transducer |
| CN116781029A (en) * | 2023-07-10 | 2023-09-19 | 浙江星曜半导体有限公司 | Inclination angle determining method of resonator in filter, filter and radio frequency chip |
| CN116781029B (en) * | 2023-07-10 | 2024-01-09 | 浙江星曜半导体有限公司 | Inclination angle determining method of resonator in filter, filter and radio frequency chip |
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