CN114744976A - Method for effectively improving excitation efficiency of interdigital transducer - Google Patents

Method for effectively improving excitation efficiency of interdigital transducer Download PDF

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CN114744976A
CN114744976A CN202210412993.8A CN202210412993A CN114744976A CN 114744976 A CN114744976 A CN 114744976A CN 202210412993 A CN202210412993 A CN 202210412993A CN 114744976 A CN114744976 A CN 114744976A
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宋丽
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
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Abstract

The invention relates to the technical field of quantum metering, in particular to a method for effectively improving the excitation efficiency of an interdigital transducer, which utilizespThe matrix method associates variables in the IDT to obtain the excited IDTpOf matrices and etched surfacespMatrix, will excite IDTpOf matrices and etched surfacespAfter the matrixes are cascaded, the amplitude of the surface acoustic wave excited by the IDT at the inlet of the surface acoustic wave single-electron transport device is obtained quantitatively, and the amplitude and the COM theory are used for calculatingpThe optimal structural parameters of the IDT are determined by the matrix factors, the excitation efficiency of the IDT is enhanced, and the device optimized by the method finds that the optimal power of the quantized current plateau is greatly reduced, the precision of the quantized acoustoelectric current is obviously improved, meanwhile, the efficiency of the IDT for exciting the SAW is greatly improved, and the input power of the IDT is effectively reduced.

Description

Method for effectively improving excitation efficiency of interdigital transducer
Technical Field
The invention relates to the technical field of quantum metering, in particular to a method for effectively improving the excitation efficiency of an interdigital transducer.
Background
In a surface acoustic wave single electron transport (SAW/SET) experiment, a microwave signal is added on an interdigital transducer (IDT), a Surface Acoustic Wave (SAW) can be directly formed on a GaAs piezoelectric body, electrons are carried by the SAW through a quasi-one-dimensional quantum channel, and therefore a quantized acoustoelectric current is formed, and the current has a potential application prospect in the aspect of quantum metering.
In the prior art, a microwave signal is added to the IDT to excite the SAW to carry electrons to form a quantized acousto-electric current, so that the microwave heating effect is an important factor influencing the current precision, and the improvement of the current precision is particularly important in order to realize the application of the quantized acousto-electric current in the aspect of quantum metrology. According to the invention, through optimizing IDT structural parameters, the excitation efficiency is improved, so that the microwave heating effect is effectively inhibited, and the purpose of improving the current precision is achieved.
Disclosure of Invention
The invention provides a method for effectively improving the excitation efficiency of an interdigital transducer.
The invention is realized by the following technical scheme:
a method for effectively improving the excitation efficiency of an interdigital transducer is characterized in that variables in an IDT are related by utilizing a p matrix method to obtain a p matrix for exciting the IDT and a p matrix for etching a surface, the p matrix for exciting the IDT and the p matrix for etching the surface are cascaded to quantitatively obtain the amplitude of a surface acoustic wave excited by the IDT at the inlet of a surface acoustic wave single-electron transport device, the optimal structural parameters of the IDT are determined according to the amplitude and a p matrix factor calculated by COM theory, and the excitation efficiency of the IDT is improved.
Furthermore, the p-matrix method is that after the IDT with the length L is constructed into a p-matrix model, the incident wave amplitude A of the acoustic end of the IDT in the p-matrix model is further constructed+Acoustic side reflected wave amplitude a-And the peak values of the voltage V and the current I are correlated through a 3 multiplied by 3 matrix to obtain a p matrix of the excited IDT as formula (1), wherein the matrix factor of the p matrix of the excited IDT is formed by
Figure BDA0003603409470000021
Is shown by
Figure BDA0003603409470000022
In
Figure BDA0003603409470000023
Representing the dimensionless transmission coefficient of the acoustic side,
Figure BDA0003603409470000024
indicating reflection coefficient when acoustic side is free from acoustic wave incidence
Figure BDA0003603409470000025
The input admittance of the IDT is shown,
Figure BDA0003603409470000026
indicating the excitation of the SAW.
Figure BDA0003603409470000027
Further, the
Figure BDA0003603409470000028
Solving COM equation by the formulas (2) - (4), wherein j represents imaginary unit, thetauDenotes the detuning coefficient, K12The mutual coupling coefficient is represented, ζ represents the transduction coefficient, C represents the static capacitance per unit length of the IDT, and ω represents the circular frequency.
Figure BDA0003603409470000029
Figure BDA00036034094700000210
Figure BDA00036034094700000211
Further, when the IDT has a two-way symmetrical structure, the matrix factors are obtained from linear equation sets (1) - (8), wherein
Figure BDA00036034094700000212
Г0＝(θp-θu)/K12，ζ0＝ζ/(θu+K12)，L＝NP1N is the finger log of IDT, P1Is the period of the IDT.
Figure BDA00036034094700000213
Figure BDA00036034094700000214
Figure BDA00036034094700000215
Figure BDA0003603409470000031
Further, an etched surface between the excitation IDT and the entrance of the quasi-one-dimensional channel of the SAW device having a p-matrix with a matrix factor as shown in formula (9) causes attenuation of the SAW
Figure BDA0003603409470000032
Wherein θ is 2 π fd/vSAWF denotes the surface acoustic wave frequency, vSAW2864m/s denotes the propagation velocity of the surface acoustic wave frequency on the etched surface, d denotes the distance between the excitation IDT and the quasi-one-dimensional channel entrance, and γ denotes the surface acoustic wave attenuation per wavelength when the surface acoustic wave propagates on the etched surface.
Figure BDA0003603409470000033
Further, a p matrix of the excited IDT and a p matrix of the etched surface are cascaded, the cascaded matrix is shown as a formula (10), wherein the matrix factor of the cascaded matrix is
Figure BDA0003603409470000034
Figure BDA0003603409470000035
Further, when no acoustic wave is incident on the acoustic side, A-(0)＝A-The expression (11) is given by (L + d) ═ 0, and the normalized amplitude of the surface acoustic wave at the inlet of the quasi-one-dimensional channel is given by the expression (11) as the expression (12)
Figure BDA0003603409470000036
Figure BDA0003603409470000037
Further, the
Figure BDA0003603409470000038
In (1)
Figure BDA0003603409470000039
Is obtained by the formula (13), wherein
Figure BDA00036034094700000310
The amplitude of the surface acoustic wave at the entrance of the one-dimensional channel is given by the equation (14), where λSAWDenotes the wavelength of the surface acoustic wave, W denotes the beam width of the surface acoustic wave and is equal to the aperture of IDT, and y denotesSAWRepresenting the characteristic admittance of the surface acoustic wave in the direction of the surface of the piezoelectric body.
Figure BDA0003603409470000041
Figure BDA0003603409470000042
Further, the voltage V absorbed by the IDT in the above formula (14) is obtained by the formulas (15) to (18), wherein y00.02S denotes the characteristic admittance of the transmission line, P0Denotes the incident power, V0Denotes the voltage, P denotes the power absorbed by the IDT, and f is the reflection coefficient.
Figure BDA0003603409470000043
Figure BDA0003603409470000044
P＝P0(1-|Γ|2) (17)
Figure BDA0003603409470000045
Further, substituting the expressions (15) to (18) into the expression (14) results in ignoring V0V of influenceS/V0The ratio is as in equation (19), and by this ratio only V is reflectedSAnd the structural parameter N, W, d of the IDT.
Figure BDA0003603409470000046
The invention has the beneficial effects that:
the invention provides a method for effectively improving the excitation efficiency of an interdigital transducer, and a device optimized by the method is found to greatly reduce the optimal power of a quantization current plateau, obviously improve the precision of quantization acoustoelectric current, greatly improve the efficiency of exciting an SAW by an IDT and effectively reduce the input power of the IDT.
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In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
FIG. 1 is a diagram of a p-matrix model of an IDT in a method for effectively improving the excitation efficiency of an interdigital transducer according to the present invention;
FIG. 2 is a schematic diagram of a cascade of an excitation IDT and an etched surface p-matrix according to a method for effectively improving the excitation efficiency of an interdigital transducer provided by the present invention;
FIG. 3 is a diagram illustrating a first embodiment of a method for effectively improving the excitation efficiency of an interdigital transducer according to the present invention;
fig. 4 is a diagram illustrating a second embodiment of the method for effectively improving the excitation efficiency of an interdigital transducer according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to examples and accompanying drawings, and the exemplary embodiments and descriptions thereof are only used for explaining the present invention and are not meant to limit the present invention.
Example 1
Referring to fig. 1-2, the method of the present invention regards each IDT cell as a three-port black box, and represents the black box by a 3 × 3 matrix, taking the amplitudes of incident waves and reflected waves at the acoustic end and the voltage-current peak value at the electrical end as variables, and relating the relationship between the acoustic variables and the electrical variables in the IDT with length L by a p matrix, which is called a p matrix method, mathematically solving p matrix factors, which can be obtained by solving a coupled mode (COM) equation for a bilaterally symmetric IDT, where a parallel differential equation set with linear coupling terms is called a coupled mode equation. The p matrix exciting the IDT and the p matrix of the etched surface are cascaded to quantitatively obtain the amplitude V of the SAW excited by the IDT at the inlet of the SAW/SET deviceSSize of (c), and VSThe distance between the IDT and the finger number N of the IDT, the aperture W and the distance between the excited IDT and the entrance d of the one-dimensional channel have direct dependency relationship, the optimal structural parameters of the IDT are determined according to the dependency relationship, the excitation efficiency of the IDT is enhanced, and the purpose of improving the current precision is finally achieved.
Example 2
Referring to fig. 3-4, this embodiment provides a specific implementation of a method for effectively improving the excitation efficiency of an interdigital transducer based on embodiment 1.
Further, the specific implementation manner is as follows:
the larger the number of pairs N of IDTs, the smaller the distance between the aperture W and the IDT and the channel entrance d, the larger the excited SAW amplitude, i.e., the higher the IDT efficiency. In the IDT preparation process, the more N, the smaller W, the higher the requirements on the manufacturing process, and W is related to the SAW beam width. The smaller d is, the stronger the reflection SAW between the excitation IDT and the reception IDT, which affects the electron transport mechanism. Therefore, by combining the quantitative calculation result of fig. 3 and the characteristics of the surface acoustic wave single electron transport experiment, the parameters of the IDT structure are optimized, the IDT has higher excitation efficiency, and the experimental condition requirements of the surface acoustic wave single electron transport are considered at the same time, SAW devices with different IDT structures are provided, and devices a, B and C are selected from the IDT structures for description. The devices are all prepared on the same substrate, and the IDT structure parameters of the device A are as follows: w is 290 μm, N is 80 pairs, and the distance d between the excited IDT and the one-dimensional channel is 1.25 mm. In the optimized devices B and C, W is 61 μm, N is 100 pairs, and d is 0.75 mm.
As shown in fig. 4, the excitation efficiency is significantly improved for device B with optimized IDT. At the same incident power, the SAW amplitude excited by the IDT is significantly enhanced, and the optimal power of the quantized acoustoelectric current plateau is observed to be 15.4dBm, and the optimal plateau slope is significantly reduced. Whereas device a, which did not optimize the IDT, observed the best plateau power as high as 20dBm with a large plateau slope.
In summary, in the surface acoustic wave single electron transport experiment, heating of two-dimensional electron gas by microwave is one of the important factors causing the current plateau slope. In previous experimental studies, it was observed that the optimal power of the quantized plateau was high, and therefore the microwave heating effect was significant and the plateau slope was large. By optimizing the parameters of the IDT structure, the optimum power is reduced by about 6dBm, so that the temperature of the two-dimensional electron gas in the channel is obviously reduced, and the slope of the plateau is reduced, wherein, FIG. 3 is a graph of V at the inlet of the one-dimensional channelSRelationship to IDT parameter N, W, d, P0Fig. 4 shows device (a) a (B) B current as a function of gate voltage V at 5dBmgThe quantization current plateau exhibited by the variation.
The research of the invention finds that after the IDT parameter structure is optimized by utilizing a p matrix method and COM theory, the SAW excitation efficiency is obviously improved. At an incident power P0When the structure parameter is 5dBm, W is 290 μm, N is 80 pairs, d is 1.25mm (the distance between the excited IDT and the receive IDT is 2d), and the amplitude of the excited SAW at the quasi-one-dimensional channel inlet is only 13 mV. And IDT with optimized parameters W of 61 μm, N of 100 pairs and d of 0.75mm, the amplitude is enhanced to 35 mV.
The foregoing shows and describes the general principles and broad features of the present invention and advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.

Claims (10)

1. A method for effectively improving the excitation efficiency of an interdigital transducer is characterized in that a p matrix for exciting the IDT and a p matrix for etching a surface are obtained by associating variables in the IDT by using a p matrix method, the p matrix for exciting the IDT and the p matrix for etching the surface are cascaded to quantitatively obtain the amplitude of a surface acoustic wave excited by the IDT at the inlet of a surface acoustic wave single-electron transport device, and the optimal structural parameters of the IDT are determined by the amplitude and a p matrix factor calculated by a COM theory, so that the excitation efficiency of the IDT is improved.
2. The method of claim 1, wherein the p-matrix method is implemented by constructing IDTs with length L as a p-matrix model and then constructing the acoustic-end incident wave amplitude a of the IDTs in the p-matrix model+Acoustic side reflected wave amplitude a-And the peak values of the voltage V and the current I are correlated through a 3 multiplied by 3 matrix to obtain a p matrix of the excited IDT as formula (1), wherein the matrix factor of the p matrix of the excited IDT is formed by
Figure FDA0003603409460000015
Is shown by
Figure FDA0003603409460000016
In
Figure FDA0003603409460000017
Representing the dimensionless transmission coefficient of the acoustic side,
Figure FDA0003603409460000018
representing the reflection coefficient when the acoustic end is free from acoustic wave incidence
Figure FDA0003603409460000019
The input admittance of the IDT is shown,
Figure FDA00036034094600000112
Figure FDA00036034094600000110
indicating the excitation of the SAW.
Figure FDA0003603409460000011
3. The method of claim 2 wherein said step of efficiently increasing the excitation efficiency of an interdigital transducer comprises
Figure FDA00036034094600000111
Solving the COM equation by the following equations (2) - (4), wherein j represents an imaginary unit, thetauDenotes the detuning coefficient, K12The mutual coupling coefficient is represented, ζ represents the transduction coefficient, C represents the static capacitance per unit length of the IDT, and ω represents the circular frequency.
Figure FDA0003603409460000012
Figure FDA0003603409460000013
Figure FDA0003603409460000014
4. The method of claim 3 wherein the matrix factors are derived from linear equations (1) - (8) when the IDT is a bi-directionally symmetric structure, and wherein
Figure FDA0003603409460000021
Г0＝(θp-θu)/K12，ζ0＝ζ/(θu+K12)，L＝NP1N is the finger log of IDT, P1Is the period of the IDT.
Figure FDA0003603409460000022
Figure FDA0003603409460000023
Figure FDA0003603409460000024
Figure FDA0003603409460000025
5. The method of claim 3 wherein the etching between the excitation IDT and the entrance of the quasi-one-dimensional channel of the SAW single-electron transport device is performed to improve the excitation efficiency of the interdigital transducerThe surface causes attenuation of surface acoustic waves, and the p matrix of the etched surface has a matrix factor shown in formula (9)
Figure FDA0003603409460000026
Wherein θ is 2 π fd/vSAWF denotes the surface acoustic wave frequency, vSAW2864m/s denotes the propagation velocity of the surface acoustic wave frequency on the etched surface, d denotes the distance between the excitation IDT and the quasi-one-dimensional channel entrance, and γ denotes the surface acoustic wave attenuation per wavelength when the surface acoustic wave propagates on the etched surface.
Figure FDA0003603409460000027
6. The method of claim 5, wherein the p matrix of the excited IDT and the p matrix of the etched surface are cascaded, the cascaded matrix is represented by formula (10), wherein the matrix factor of the cascaded matrix is
Figure FDA0003603409460000029
Figure FDA0003603409460000028
7. The method of claim 6 wherein A is the acoustic end when no acoustic wave is incident-(0)＝A-(L + d) ═ 0, that is, equation (11), and from equation (11), the normalized amplitude of the surface acoustic wave at the quasi-one-dimensional channel entrance can be obtained as equation (12)
Figure FDA0003603409460000031
Figure FDA0003603409460000032
8. The method of claim 7 wherein said step of efficiently improving the excitation efficiency of an interdigital transducer comprises
Figure FDA0003603409460000038
In
Figure FDA0003603409460000039
Is obtained by the formula (13), wherein
Figure FDA00036034094600000310
The amplitude of the surface acoustic wave at the entrance of the one-dimensional channel is given by the equation (14), where λSAWDenotes the wavelength of the surface acoustic wave, W denotes the beam width of the surface acoustic wave and is equal to the aperture of IDT, and y denotesSAWRepresenting the characteristic admittance of the surface acoustic wave in the direction of the surface of the piezoelectric body.
Figure FDA0003603409460000033
Figure FDA0003603409460000034
9. A method for effectively improving the excitation efficiency of an interdigital transducer according to claim 8, wherein the voltage V absorbed by the IDT in formula (14) is obtained by formulas (15) - (18), wherein y00.02S denotes the characteristic admittance of the transmission line, P0Denotes the incident power, V0Denotes the voltage, P denotes the power absorbed by the IDT, and f is the reflection coefficient.
Figure FDA0003603409460000035
Figure FDA0003603409460000036
P＝P0(1-|Γ|2) (17)
Figure FDA0003603409460000037
10. A method for efficiently improving the excitation efficiency of an interdigital transducer according to claim 9, wherein substituting equations (15) - (18) into equation (14) results in ignoring V0V of influenceS/V0The ratio is given by the formula (19), from which only V is reflectedSAnd the structural parameter N, W, d of the IDT.
Figure FDA0003603409460000041
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Citations (8)

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US20080252396A1 (en) * 2005-11-23 2008-10-16 Werner Ruile Electroacoustic Component
CN101860342A (en) * 2010-04-29 2010-10-13 贵州大学 SAW (Surface Acoustic Wave) device of bus bar doubled as reflecting grating type IDT (Interdigital Transducer) structure
US20110128094A1 (en) * 2009-12-02 2011-06-02 Industrial Technology Research Institute Resonator and Periodic Structure
CN103117728A (en) * 2013-03-07 2013-05-22 浙江工商大学 Acoustic surface wave resonator
US10009002B1 (en) * 2015-09-04 2018-06-26 National Technology & Engineering Solutions Of Sandia, Llc Methods for suppressing spurious modes in microresonators
WO2020069794A1 (en) * 2018-10-01 2020-04-09 RF360 Europe GmbH Saw device designed for high frequencies
CN112801235A (en) * 2021-04-12 2021-05-14 四川大学 Model training method, prediction device, re-recognition model and electronic equipment

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006121228A (en) * 2004-10-19 2006-05-11 Seiko Epson Corp Surface acoustic wave element, its manufacturing process, electronic device and electronic apparatus
US20080252396A1 (en) * 2005-11-23 2008-10-16 Werner Ruile Electroacoustic Component
US20110128094A1 (en) * 2009-12-02 2011-06-02 Industrial Technology Research Institute Resonator and Periodic Structure
CN101860342A (en) * 2010-04-29 2010-10-13 贵州大学 SAW (Surface Acoustic Wave) device of bus bar doubled as reflecting grating type IDT (Interdigital Transducer) structure
CN103117728A (en) * 2013-03-07 2013-05-22 浙江工商大学 Acoustic surface wave resonator
US10009002B1 (en) * 2015-09-04 2018-06-26 National Technology & Engineering Solutions Of Sandia, Llc Methods for suppressing spurious modes in microresonators
WO2020069794A1 (en) * 2018-10-01 2020-04-09 RF360 Europe GmbH Saw device designed for high frequencies
CN112801235A (en) * 2021-04-12 2021-05-14 四川大学 Model training method, prediction device, re-recognition model and electronic equipment

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