CN101860342B - SAW (Surface Acoustic Wave) device of bus bar doubled as reflecting grating type IDT (Interdigital Transducer) structure - Google Patents
SAW (Surface Acoustic Wave) device of bus bar doubled as reflecting grating type IDT (Interdigital Transducer) structure Download PDFInfo
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- CN101860342B CN101860342B CN 201010159715 CN201010159715A CN101860342B CN 101860342 B CN101860342 B CN 101860342B CN 201010159715 CN201010159715 CN 201010159715 CN 201010159715 A CN201010159715 A CN 201010159715A CN 101860342 B CN101860342 B CN 101860342B
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Abstract
The invention discloses an SAW (Surface Acoustic Wave) device of a bus bar doubled as a reflecting grating type IDT (Interdigital Transducer) structure, comprising a surface acoustic wave filter and a surface acoustic wave resonator. The surface acoustic wave filter and the surface acoustic wave resonator comprise a packaging shell and tube cores of the surface acoustic wave filter and the surface acoustic wave resonator, wherein the two tube cores are electrically connected in the packing shell by using a conducting wire; and the tube cores comprise an input interdigital transducer with a bus bar doubled as a reflecting grating and an output interdigital transducer with a bus bar doubled as a reflecting grating, and the input interdigital transducer and the output interdigital transducer are etched on the surface of a piezoelectric monocrystal or a piezoelectric film. The bus bar doubled as the reflecting grating is in a triangular, circular or elliptic structure. Under the condition of same tube core areas, interdigital numbers and coupling hole diameters of the surface acoustic wave filter and the surface acoustic wave resonator with the IDT structure design, the sidelobe suppression is improved by more than 9dB, and the insertion loss is lowered by more than 12dB.
Description
Technical field
The present invention relates to a kind of SAW (Surface Acoustic Wave) device, particularly a kind of SAW (Surface Acoustic Wave) device that comprises surface acoustic wave bandpass filter or SAW (Surface Acoustic Wave) resonator.
Background technology
There do not is symmetrical centre in crystal structure due to piezoelectric (piezoelectric monocrystal or piezoelectric membrane), when on piezoelectric, applying voltage, can cause that the lattice in piezoelectric monocrystal or piezoelectric membrane produces deformation.If added voltage will produce surface acoustic wave (Surface Acoustic Wave is called for short SAW) for the voltage signal of input in piezoelectric monocrystal or piezoelectric membrane lattice surface, this SAW is a kind of along piezoelectric monocrystal or the propagation of piezoelectric membrane surface, and the degree of depth that amplitude gos deep into crystalline material increases and the elastic wave of rapid decay.
The filtering of Surface Acoustic Wave Filter or SAW (Surface Acoustic Wave) resonator, the realization of resonance function is based on the surface acoustic wave formed in piezoelectric monocrystal or piezoelectric membrane lattice surface.Surface Acoustic Wave Filter or SAW (Surface Acoustic Wave) resonator, comprise its encapsulating housing, is positioned over the interior Surface Acoustic Wave Filter of encapsulating housing or the tube core of SAW (Surface Acoustic Wave) resonator, and tube core is electrically connected to wire in encapsulating housing with the outer lead of encapsulating housing.The tube core of described Surface Acoustic Wave Filter or SAW (Surface Acoustic Wave) resonator comprises input interdigital transducer (inter digital transducer is called for short IDT) and the output interdigital transducer (position that occurs IDT to descend to the mortal world all refers to interdigital transducer) that is etched in piezoelectric monocrystal or piezoelectric membrane surface.Elementary cell wherein is the structure of input IDT and output IDT.The manufacture method of this structure is: for example, at piezoelectric (LiNbO
3, ZnO and AlN) and surface is by evaporation or sputter layer of metal aluminium or copper, and the mask pattern by two IDT designing, utilize photoetching method to be etched in substrate surface.The input interdigital transducer utilizes the inverse piezoelectric effect of crystal to convert the electrical signal to surface acoustic wave (SAW), on substrate surface, propagates, and after certain delay, output transducer utilizes piezoelectric effect to convert surface wave (SAW) signal to the signal of telecommunication.The function of Surface Acoustic Wave Filter or SAW (Surface Acoustic Wave) resonator is processed the signal of telecommunication, comprises that filtering, time delay, pulse compression and broadening, vibration frequency stabilization, decoding and coding, convolution are relevant, analysis of spectrum etc.Described input IDT and output IDT and piezoelectric substrate form the transmission channel of surface acoustic wave jointly, different IDT structures has different surface acoustic wave transmission characteristics, therefore, the design of Surface Acoustic Wave Filter or SAW (Surface Acoustic Wave) resonator is mainly the design to input, output interdigital transducer structure.
The main feature of SAW device (comprising Surface Acoustic Wave Filter, SAW (Surface Acoustic Wave) resonator) is that design flexibility is large, analog/digital is compatible, group delay time deviation and good, the optional wide frequency range of frequency selectivity, the input and output impedance error is little, loss is little, anti-electromagnetic interference (EMI) ability is strong, reliability is high, the device volume made is little, lightweight, be suitable for microencapsulated.Its volume, weight are respectively 1/40 and 1/30 left and right of Ceramic Dielectric Filter, and can realize the function of Various Complex.The feature and advantage of SAW filter, adapted to the requirement of Modern Communication System equipment and compactization of portable phone and high frequency, digitlization, high-performance, the aspect such as highly reliable.Therefore, start again the climax of a new research SAW device.Study hotspot is high frequency, filter with low insertion loss SAW filter.
IDT is the core of SAW device, the parameter that forms IDT mainly contains: electrode logarithm (periodicity N), IDT sound aperture (electrode overlap length W), interdigital electrode width a, interdigital electrode interval b and interdigital electrode metal layer thickness h, these have determined the centre frequency f of this transducer jointly
0.
The tube core of the Surface Acoustic Wave Filter (or SAW (Surface Acoustic Wave) resonator) that existing (or claim traditional or claim with reflecting grating) IDT structure etching is made in the piezoelectric substrate surface is (in figure, the encapsulating housing of Surface Acoustic Wave Filter or SAW (Surface Acoustic Wave) resonator and domain do not draw) as shown in Figure 1, and the figure acceptance of the bid understands the particular location of input, output interdigital transducer and reflecting grating.Fig. 2 has indicated the amplitude-frequency characteristic of the Surface Acoustic Wave Filter (or SAW (Surface Acoustic Wave) resonator) that existing (or claim traditional or claim with reflecting grating) IDT structure etching is made in the piezoelectric substrate surface, its main lobe decays to 4dB, the first secondary lobe, the second secondary lobe and the 3rd side lobe attenuation are respectively 28dB, 39dB and 46dB, illustrate that the outer steepness of its wave belt is undesirable.Fig. 3 has indicated Surface Acoustic Wave Filter that existing (or claim traditional or claim with reflecting grating) IDT structure etching is made in the piezoelectric substrate surface or the insertion loss of SAW (Surface Acoustic Wave) resonator, and its IL value, up to 28dB, illustrates that its insertion loss is larger.
Summary of the invention
The technical problem to be solved in the present invention is, provide a kind of busbar to double as the SAW device of reflecting grating type IDT structure, not good with the Sidelobe Suppression that overcomes Surface Acoustic Wave Filter that prior art exists or SAW (Surface Acoustic Wave) resonator, insertion loss reach greatly the outer steepness of wave belt undesirable wait not enough.
Technical scheme of the present invention is as follows: it comprises Surface Acoustic Wave Filter or SAW (Surface Acoustic Wave) resonator, Surface Acoustic Wave Filter or SAW (Surface Acoustic Wave) resonator include encapsulating housing and are positioned over the interior Surface Acoustic Wave Filter of encapsulating housing or the tube core of SAW (Surface Acoustic Wave) resonator, and tube core is electrically connected to wire in encapsulating housing; Described tube core, here refer to the tube core of Surface Acoustic Wave Filter or the tube core of SAW (Surface Acoustic Wave) resonator, the tube core of Surface Acoustic Wave Filter or the tube core of SAW (Surface Acoustic Wave) resonator comprise that the busbar that is etched in piezoelectric monocrystal or piezoelectric membrane surface doubles as the input interdigital transducer of reflecting grating and the output interdigital transducer that busbar doubles as reflecting grating.
Described busbar doubles as reflecting grating and adopts triangle, circle or ellipsoidal structure.
Described busbar doubles as reflecting grating and adopts triangular structure, and this triangle is isosceles triangle, and the length L on its limit, middle part of the side is no more than 35% of input interdigital transducer and output interdigital transducer tube core length sum.
Described busbar doubles as reflecting grating and adopts triangular structure, and this triangle is isosceles triangle, and the half-angle of drift angle (or a waist limit and horizontal angle) is θ.
Described busbar double as reflecting grating adopt circular configuration, radius of circle R be no more than Surface Acoustic Wave Filter tube core length 35% or sound surface resonance organ pipe core length 35%.
Described busbar double as reflecting grating adopt ellipsoidal structure, oval major semiaxis A be no more than Surface Acoustic Wave Filter tube core length 40% or sound surface resonance organ pipe core length 40%.
In above technical scheme, acoustic surface wave propagation coupling place at input, output transducer still retains the rectangle aperture, to improve coupling efficiency, like this, both can reduce die area, be convenient to again interdigital apodization, reduce insertion loss, improve Sidelobe Suppression efficiency, in the bandwidth required, squareness factor improves.When theory designs, by traditional
function model improves, and is about to an interdigital finger and is seeing that it is a use that an excitaton source is modified into an excitaton source
the Ji Yuan that function model means, interdigital can a composition to several or tens Ji Yuan by one, like this, the interdigital finger that interdigital finger or the shape of different length changed can be used accurately
function model means, improves design accuracy.
With existing (or claim traditional or claim with reflecting grating) IDT structure, compare, adopt IDT structure of the present invention (to comprise that busbar doubles as the triangle IDT structure of reflecting grating, busbar doubles as the circular IDT structure of reflecting grating, busbar doubles as the oval IDT structure of reflecting grating) design Surface Acoustic Wave Filter (or SAW (Surface Acoustic Wave) resonator), at die area, interdigital number, under the identical condition in coupling aperture, more than its Sidelobe Suppression has improved 9dB, more than insertion loss has reduced 12dB.Perhaps, in Sidelobe Suppression, insertion loss requires in identical situation, with the die area of the surface wave filter (or surface resonator) of these three kinds of IDT structural designs, reduces.
The accompanying drawing explanation
Fig. 1: the Surface Acoustic Wave Filter of making in piezoelectric substrate (or piezoelectric membrane) surface for existing (or claim traditional or claim with reflecting grating) IDT structure etching or the tube core schematic diagram (contour line of encapsulating housing and piezoelectric substrate or piezoelectric membrane does not draw) of SAW (Surface Acoustic Wave) resonator;
Fig. 2: the Surface Acoustic Wave Filter of making in piezoelectric substrate or piezoelectric membrane surface for existing (or claim traditional or claim the band reflecting grating) IDT structure etching or the amplitude-frequency characteristic schematic diagram of SAW (Surface Acoustic Wave) resonator;
Fig. 3: the Surface Acoustic Wave Filter of making in piezoelectric substrate or piezoelectric membrane surface for existing (or claim traditional or claim with reflecting grating) IDT structure etching or the insertion loss schematic diagram of SAW (Surface Acoustic Wave) resonator;
Fig. 4: for busbar of the present invention doubles as the triangle IDT structure etching of reflecting grating in piezoelectric substrate or the surperficial Surface Acoustic Wave Filter of making of piezoelectric membrane or the tube core schematic diagram (encapsulating housing and piezoelectric substrate or piezoelectric membrane contour line do not draw) of SAW (Surface Acoustic Wave) resonator;
Fig. 5: for busbar of the present invention doubles as the triangle IDT structure etching of reflecting grating in piezoelectric substrate or surperficial Surface Acoustic Wave Filter or the SAW (Surface Acoustic Wave) resonator amplitude-frequency characteristic schematic diagram of making of piezoelectric membrane;
Fig. 6: for busbar of the present invention doubles as the triangle IDT structure etching of reflecting grating in piezoelectric substrate or the surperficial Surface Acoustic Wave Filter of making of piezoelectric membrane or the insertion loss schematic diagram of SAW (Surface Acoustic Wave) resonator;
Fig. 7: for busbar of the present invention doubles as the circular IDT structure etching of reflecting grating in piezoelectric substrate or the surperficial Surface Acoustic Wave Filter of making of piezoelectric membrane or the tube core schematic diagram (contour line of encapsulating housing and piezoelectric substrate or piezoelectric membrane does not draw) of SAW (Surface Acoustic Wave) resonator;
Fig. 8: for busbar of the present invention doubles as the circular IDT structure etching of reflecting grating in piezoelectric substrate or the surperficial Surface Acoustic Wave Filter of making of piezoelectric membrane or the amplitude-frequency characteristic schematic diagram of SAW (Surface Acoustic Wave) resonator;
Fig. 9: the circular IDT structure etching that doubles as reflecting grating for busbar of the present invention in piezoelectric substrate or piezoelectric membrane surface, make Surface Acoustic Wave Filter or the insertion loss schematic diagram of SAW (Surface Acoustic Wave) resonator;
Figure 10: for busbar of the present invention doubles as the oval IDT structure etching of reflecting grating in piezoelectric substrate or the surperficial Surface Acoustic Wave Filter of making of piezoelectric membrane or the tube core schematic diagram (encapsulating housing and piezoelectric substrate or piezoelectric membrane contour line do not draw) of SAW (Surface Acoustic Wave) resonator;
Figure 11: for busbar of the present invention doubles as the oval IDT structure etching of reflecting grating in piezoelectric substrate or the surperficial Surface Acoustic Wave Filter of making of piezoelectric membrane or the amplitude-frequency characteristic schematic diagram of SAW (Surface Acoustic Wave) resonator;
Figure 12: for busbar of the present invention doubles as the oval IDT structure etching of reflecting grating in piezoelectric substrate or the surperficial Surface Acoustic Wave Filter of making of piezoelectric membrane or the insertion loss schematic diagram of SAW (Surface Acoustic Wave) resonator.
Embodiment
Embodiments of the invention:
As shown in Figure 1, the mark 2 in figure means the input interdigital transducer to existing band reflecting grating type IDT structure (tube core structure); Mark 3 in figure means output interdigital transducer; Mark 4 in figure means reflecting grating; Mark in figure 5 mean structure chart in the dotted line frames for by existing (or claim traditional or claim with reflecting grating) IDT structure etching in the tube core of piezoelectric substrate or the surperficial Surface Acoustic Wave Filter (or SAW (Surface Acoustic Wave) resonator) of making of piezoelectric membrane, (encapsulating housing and piezoelectric substrate or piezoelectric membrane contour line do not draw); The width of interdigital electrode is a, and electrode gap is b.At the a=b=7.5 micron, the Surface Acoustic Wave Filter designed during interdigital logarithm N=30 or the amplitude-frequency characteristic of SAW (Surface Acoustic Wave) resonator and insertion loss are respectively as shown in Figure 2 and Figure 3.Substrate material is the AlN piezoelectric membrane of C axle preferrel orientation (100).[annotate: providing existing (or claim traditional or claim with reflecting grating) IDT structure herein, is in order to compare with new construction of the present invention].
As shown in Figure 4, the mark 1 in figure means that the figure in the dotted line frame is the IDT that busbar doubles as reflecting grating (being simultaneously again the part of tube core structure) to the triangle IDT tube core structure that embodiment mono-, busbar double as reflecting grating; Mark 2 in figure means the input interdigital transducer; Mark 3 in figure means output interdigital transducer; Mark in figure 4 means the tube core (contour line of encapsulating housing, domain and piezoelectric substrate or piezoelectric membrane does not draw) of the Surface Acoustic Wave Filter (or SAW (Surface Acoustic Wave) resonator) that IDT etching that the structure chart in the dotted line frames is the busbar of the present invention triangular structure that doubles as reflecting grating is made in piezoelectric substrate or piezoelectric membrane surface.The width of interdigital electrode is a, and electrode gap is b, and a+b means the distance between two busbars (doubling as reflecting grating).In input IDT, sound aperture changes.At a, b mono-regularly, the θ angle in figure determines the length of L, has also just determined in the triangular structure can to require decide according to specific design for the quantity of the finger of apodization.Its scope is: the value of L can not surpass adopt busbar to double as 35% of the input interdigital transducer of the Surface Acoustic Wave Filter of triangular structure IDT of reflecting grating or SAW (Surface Acoustic Wave) resonator and output interdigital transducer tube core length sum.
At the a=b=7.5 micron, interdigital logarithm N=30, the θ angle is 45 to spend the amplitude-frequency characteristic of Surface Acoustic Wave Filter (or SAW (Surface Acoustic Wave) resonator) of time design and insertion loss result respectively as shown in Figure 5, Figure 6.Substrate material is the AlN piezoelectric membrane (substrate material can be any substrate or film that piezoelectric effect is arranged) of C axle preferrel orientation (100).
As shown in Figure 7, the mark 1 in figure means that the figure in the dotted line frame is the IDT that busbar doubles as reflecting grating (being simultaneously again the part of tube core structure) to the circular IDT tube core structure that embodiment bis-, busbar double as reflecting grating; Mark 2 in figure means the input interdigital transducer; Mark 3 in figure means output interdigital transducer; Mark in figure 4 means the tube core (contour line of encapsulating housing, domain and piezoelectric substrate or piezoelectric membrane does not draw) of the Surface Acoustic Wave Filter (or SAW (Surface Acoustic Wave) resonator) that IDT etching that the structure chart in the dotted line frames is the busbar of the present invention circular configuration that doubles as reflecting grating is made in piezoelectric substrate or piezoelectric membrane surface.The width of interdigital electrode is a, and electrode gap is b, and a+b means the distance between two busbars (doubling as reflecting grating).In input IDT, sound aperture changes.The width of interdigital electrode is a, and electrode gap is b, and in the IDT of circular configuration, sound aperture changes.At a, b mono-regularly, R(radius of circle in figure) determined in circular configuration IDT the quantity for the finger of apodization, the scope of R is: the value of R can not surpass adopt busbar double as reflecting grating circular configuration IDT tube core length 35%, can require decide according to specific design.At the a=b=7.5 micron, the Surface Acoustic Wave Filter designed during interdigital logarithm N=30 or the amplitude-frequency characteristic of SAW (Surface Acoustic Wave) resonator and insertion loss are respectively as shown in Figure 8, Figure 9.Substrate material is the AlN piezoelectric membrane of C axle preferrel orientation (100).
As shown in figure 10, the mark 1 in figure means that the figure in the dotted line frame is the IDT that busbar doubles as reflecting grating (being simultaneously again the part of tube core structure) to the oval IDT tube core structure that embodiment tri-, busbar double as reflecting grating; Mark 2 in figure means that busbar doubles as the ellipse input interdigital transducer of reflecting grating; Mark 3 in figure means that busbar doubles as the oval output interdigital transducer of reflecting grating; Mark in figure 4 means Surface Acoustic Wave Filter that IDT etching that the structure chart in the dotted line frames is the busbar of the present invention ellipsoidal structure that doubles as reflecting grating is made in piezoelectric substrate (or piezoelectric membrane) surface or the tube core (contour line of encapsulating housing, domain and piezoelectric substrate or piezoelectric membrane does not draw) of SAW (Surface Acoustic Wave) resonator.The width of interdigital electrode is a, and electrode gap is b, and a+b means the distance between two busbars (doubling as reflecting grating).In the IDT of circular configuration, sound aperture changes.At a, b mono-regularly, A(in figure is oval major semiaxis) determined in ellipsoidal structure IDT that the span of A is for the quantity of the finger of apodization: the value of A can not surpass 40% of the Surface Acoustic Wave Filter of the ellipsoidal structure IDT that adopts busbar to double as reflecting grating or SAW (Surface Acoustic Wave) resonator tube core length.Can require to decide according to specific design.
At the a=b=7.5 micron, the Surface Acoustic Wave Filter designed during interdigital logarithm N=30, the amplitude-frequency characteristic of resonator and insertion loss are respectively as Figure 11, illustrated in Figure 12.Substrate material is the AlN piezoelectric membrane of C axle preferrel orientation (100).
The busbar of the invention described above doubles as Surface Acoustic Wave Filter or the SAW (Surface Acoustic Wave) resonator of three kinds of IDT structures of reflecting grating, with the Character Comparison situation of existing (or claim traditional or claim with reflecting grating) IDT membrane structure-borne noise surface wave filter or SAW (Surface Acoustic Wave) resonator in Table 1.
table 1
For the SAW device, in theory, insertion loss and main peak decay are the smaller the better, and side lobe attenuation (Sidelobe Suppression) is the bigger the better, and the squareness factor of the larger explanation device of Sidelobe Suppression is better, and SAW device is desired just for this.From table 1, data can be found out, busbar doubles as the main peak decay of several IDT structures of reflecting grating, and Sidelobe Suppression and insertion loss all are better than the band reflecting grating type IDT structure of prior art.
Claims (2)
1. a busbar doubles as the SAW device of reflecting grating type IDT structure, it comprises Surface Acoustic Wave Filter or SAW (Surface Acoustic Wave) resonator, Surface Acoustic Wave Filter or SAW (Surface Acoustic Wave) resonator include encapsulating housing and are positioned over the interior Surface Acoustic Wave Filter of encapsulating housing or the tube core of SAW (Surface Acoustic Wave) resonator, and tube core is electrically connected to wire in encapsulating housing with the outer lead of encapsulating housing; It is characterized in that: described tube core comprises that the busbar that is etched in piezoelectric monocrystal or piezoelectric membrane surface doubles as reflecting grating type input interdigital transducer and busbar doubles as reflecting grating type output interdigital transducer; Described busbar doubles as reflecting grating type IDT structure and adopts triangle or circular or ellipsoidal structure;
Described busbar doubles as reflecting grating type IDT structure and adopts triangular structure, and this triangle is isosceles triangle, and the length L on its limit, middle part of the side is no more than 35% of input interdigital transducer and output interdigital transducer tube core length sum;
Described busbar doubles as reflecting grating type IDT structure and adopts circular configuration, and radius of circle R is no more than 35% of Surface Acoustic Wave Filter or sound surface resonance organ pipe core length;
Described busbar doubles as reflecting grating type IDT structure and adopts ellipsoidal structure, and oval major semiaxis is no more than 40% of Surface Acoustic Wave Filter or sound surface resonance organ pipe core length.
2. busbar according to claim 1 doubles as the SAW device of reflecting grating type IDT structure, it is characterized in that: described busbar doubles as reflecting grating type IDT structure and adopts triangular structure, this triangle is isosceles triangle, the half-angle of drift angle is θ, the θ angle requires to change according to weighting, and the length L that the variation at θ angle meets the waist limit can not surpass 35% of input interdigital transducer and output interdigital transducer tube core length sum.
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| CN 201010159715 CN101860342B (en) | 2010-04-29 | 2010-04-29 | SAW (Surface Acoustic Wave) device of bus bar doubled as reflecting grating type IDT (Interdigital Transducer) structure |
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| CN 201010159715 CN101860342B (en) | 2010-04-29 | 2010-04-29 | SAW (Surface Acoustic Wave) device of bus bar doubled as reflecting grating type IDT (Interdigital Transducer) structure |
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Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103078603B (en) * | 2013-02-06 | 2016-05-18 | 中国电子科技集团公司第二十六研究所 | A kind of SAW filter with high power holding capacity |
| KR102083803B1 (en) * | 2014-06-23 | 2020-03-03 | 가부시키가이샤 무라타 세이사쿠쇼 | Elastic wave device |
| DE102016110139A1 (en) * | 2016-06-01 | 2017-12-07 | Snaptrack, Inc. | SAW filter with spurious suppression |
| CN106100603B (en) * | 2016-08-08 | 2020-10-27 | 贵州民族大学 | Three-dimensional structure gain compensation type SAW device and preparation method thereof |
| CN106067777B (en) * | 2016-08-08 | 2020-11-10 | 贵州民族大学 | Planar structure gain compensation type SAW device and preparation method thereof |
| CN106253874A (en) * | 2016-09-22 | 2016-12-21 | 深圳华远微电科技有限公司 | A kind of RFID chip based on SAW resonator and encapsulating structure thereof |
| CN109787579B (en) * | 2019-01-22 | 2020-04-03 | 成都频岢微电子有限公司 | SAW resonator with reduce spurious function |
| CN113346859A (en) * | 2021-07-07 | 2021-09-03 | 无锡中微晶园电子有限公司 | Surface acoustic wave resonator with high Q value and preparation method thereof |
| CN114421923B (en) * | 2022-01-11 | 2023-08-01 | 无锡市好达电子股份有限公司 | High-performance surface acoustic wave filter |
| CN114268294B (en) * | 2022-03-03 | 2022-06-17 | 深圳新声半导体有限公司 | SAW device including hybrid weighting type reflection grating and hybrid weighting type reflection grating |
| CN114744976B (en) * | 2022-04-19 | 2023-06-23 | 四川大学 | Method for effectively improving excitation efficiency of interdigital transducer |
| CN116781029B (en) * | 2023-07-10 | 2024-01-09 | 浙江星曜半导体有限公司 | Inclination angle determining method of resonator in filter, filter and radio frequency chip |
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