CN203482167U - Low-temperature-drift narrowband surface acoustic wave filter - Google Patents
Low-temperature-drift narrowband surface acoustic wave filter Download PDFInfo
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- CN203482167U CN203482167U CN201320438902.4U CN201320438902U CN203482167U CN 203482167 U CN203482167 U CN 203482167U CN 201320438902 U CN201320438902 U CN 201320438902U CN 203482167 U CN203482167 U CN 203482167U
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Abstract
The utility model provides a low-temperature-drift narrowband surface acoustic wave filter, which comprises two parallel surface acoustic wave resonant channels on a low-frequency temperature-coefficient cut piezoelectric single-crystal substrate manufactured within a wide temperature range, and a surface acoustic wave lateral coupling structure arranged between the two surface acoustic wave resonant channels. In this way, the temperature drift of the frequency characteristic parameters of the device is kept to be small within a larger working temperature range. The metallization ratio of the surface acoustic wave lateral coupling structure is basically consistent with the metallization ratio of an inter-digital energy transducer, so that the reflection on the lateral-mode component of the surface acoustic wave is reduced. Meanwhile, the coupling degree of the surface acoustic waves of the two surface acoustic wave resonant channels is increased and the range of the frequency band of the narrowband surface acoustic wave filter is enlarged. In this way, the required narrowband signal filtering function is better realized. The low-temperature-drift narrowband surface acoustic wave filter can be applied to the electronic information field, such as mobile communication, wireless local area networks, and the like.
Description
Technical field
The utility model relates to a kind of Surface Acoustic Wave Filter, and especially Low Drift Temperature is compared with narrow-band sound surface wave filter.
Background technology
Surface Acoustic Wave Filter is to utilize the piezoelectric effect of particular crystal and acoustic surface wave propagation characteristic and a kind of filtering device of designing, its function is to allow the signal of a certain frequency bandwidth by suppressing the signal of other frequency, and its selecting frequency characteristic is decided by the material parameter of piezoelectric substrate and the structural parameters of filter metal electrode figure.
At present, generally adopt transverse coupling surface acoustic wave resonance filter construction to realize narrow-band filtering function.But existing transverse coupling surface acoustic wave resonance filter is because of the imperfection of its transverse coupling structural design, smaller bandwidth, be difficult to meet bandwidth in related application between broadband and arrowband compared with the filtering requirements of arrowband (3dB relative bandwidth >3 ‰) signal, and there is larger temperature drift in the frequency characteristic of existing surface acoustic wave narrow band filter.
Utility model content
The purpose of this utility model is for overcoming the above-mentioned shortcoming of acoustic current surface wave narrow band filter.
For achieving the above object, the technical solution adopted in the utility model is as follows:
Provide a kind of Low Drift Temperature compared with narrow-band sound surface wave filter, comprise piezoelectric monocrystal substrate, also comprise two surface acoustic wave resonance passages arranged side by side that are made on piezoelectric monocrystal substrate and be located at the surface acoustic wave transverse coupling structure between these two surface acoustic wave resonance passages; Each surface acoustic wave resonance passage comprises interdigital transducer, is respectively in short circuit metal digital reflex array and signal electrode and the ground electrode of interdigital transducer both sides.
Described surface acoustic wave transverse coupling structure is that short circuit refers to and open a way refer to compound bonding jumper grid structure, its ratio that metallizes, and the ratio of metal finger part and non-metallic part area in structure graph, suitable with the metallization ratio of interdigital transducer.
Described piezoelectric monocrystal substrate is the single crystal quartz substrate of low frequency temperature coefficient cut type in wide temperature range.
On the single crystal quartz substrate of the utility model low frequency temperature coefficient cut type in wide temperature range, realize compared with narrow-band sound surface wave filter, can the less temperature drift of retainer member frequency characteristic parameter in larger operating temperature range; The metallization of surface acoustic wave transverse coupling structure is compared with the metallization of interdigital transducer than basically identical, can reduce the reflection to surface acoustic wave transverse mode component, strengthen the degree of coupling of two surface acoustic wave resonance interchannel surface acoustic waves, increase the frequency bandwidth of surface acoustic wave narrow band filter, realize preferably desired compared with narrow band signal filter function.The utility model can be widely used in the electronic information fields such as mobile communication and WLAN (wireless local area network).
Accompanying drawing explanation
Fig. 1 is the utility model structural representation;
Fig. 2 is the schematic diagram of surface acoustic wave transverse coupling structure in Fig. 1.
In figure: 1, quartz piezoelectric monocrystal chip, 2, surface acoustic wave resonance passage, 21, interdigital transducer, 22, short circuit metal digital reflex array, 3, surface acoustic wave transverse coupling structure, 31, bonding jumper grid, 32, dead-short-circuit refers to bonding jumper grid, 311, short circuit refers to, 312, open circuit refers to, 4, signal electrode, 5, ground electrode.
Embodiment
Below in conjunction with accompanying drawing, the utility model is described in further detail:
Fig. 1 is the utility model structural representation, the quartz piezoelectric monocrystal chip 1 in wide temperature range with low frequency temperature coefficient that comprises 35.50 ° of Y-X cut types, be produced on two surface acoustic wave resonance passages 2 on piezoelectric monocrystal substrate 1, wherein the finger logarithm of interdigital transducer 21 is 83 pairs, and total finger number of both sides short circuit metal digital reflex array 22 is respectively 100;
Fig. 2 is the schematic diagram of surface acoustic wave transverse coupling structure, the surface acoustic wave transverse coupling structure 3 that connects two surface acoustic wave resonance passages 2, intermediate portion is divided into short circuit and refers to that 311 refer to 312 alternate bonding jumper grid 31 with open circuit, both sides are that dead-short-circuit refers to 311 bonding jumper grid 32, wherein short circuit refers to that total finger number of 311 is 182, and open circuit refers to that total finger number of 312 is 143.
The metal pattern configuration of surface acoustic wave resonance passage 2, surface acoustic wave transverse coupling structure 3 and signal electrode 4 and ground electrode 5 is by forming containing the Magnetron Sputtered Al Film chemical wet etching of 0.5% bronze medal, and aluminium film thickness is 5600, and metallization is than being 1.1.
Claims (1)
1. Low Drift Temperature, compared with a narrow-band sound surface wave filter, comprises piezoelectric monocrystal substrate, it is characterized in that:
Also comprise two surface acoustic wave resonance passages arranged side by side that are made on piezoelectric monocrystal substrate and be located at the surface acoustic wave transverse coupling structure between these two surface acoustic wave resonance passages; Each surface acoustic wave resonance passage comprises interdigital transducer, is respectively in short circuit metal digital reflex array and signal electrode and the ground electrode of interdigital transducer both sides.
2. Low Drift Temperature according to claim 1, compared with narrow-band sound surface wave filter, is characterized in that:
Described surface acoustic wave transverse coupling structure is that short circuit refers to and open a way refer to compound bonding jumper grid structure, and its metallization is than the ratio for metal finger part and non-metallic part area, with the metallization of interdigital transducer than identical.
3. Low Drift Temperature according to claim 1, compared with narrow-band sound surface wave filter, is characterized in that:
Described piezoelectric monocrystal substrate is the single crystal quartz substrate of low frequency temperature coefficient cut type in wide temperature range.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320438902.4U CN203482167U (en) | 2013-07-23 | 2013-07-23 | Low-temperature-drift narrowband surface acoustic wave filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320438902.4U CN203482167U (en) | 2013-07-23 | 2013-07-23 | Low-temperature-drift narrowband surface acoustic wave filter |
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| Publication Number | Publication Date |
|---|---|
| CN203482167U true CN203482167U (en) | 2014-03-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201320438902.4U Expired - Fee Related CN203482167U (en) | 2013-07-23 | 2013-07-23 | Low-temperature-drift narrowband surface acoustic wave filter |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114204914A (en) * | 2022-02-21 | 2022-03-18 | 中国电子科技集团公司信息科学研究院 | Surface acoustic wave transverse coupling resonator for gas detection |
-
2013
- 2013-07-23 CN CN201320438902.4U patent/CN203482167U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114204914A (en) * | 2022-02-21 | 2022-03-18 | 中国电子科技集团公司信息科学研究院 | Surface acoustic wave transverse coupling resonator for gas detection |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140312 Termination date: 20160723 |