CN101852985B - 一种基板对位标记的制作方法 - Google Patents

一种基板对位标记的制作方法 Download PDF

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CN101852985B
CN101852985B CN2009103011986A CN200910301198A CN101852985B CN 101852985 B CN101852985 B CN 101852985B CN 2009103011986 A CN2009103011986 A CN 2009103011986A CN 200910301198 A CN200910301198 A CN 200910301198A CN 101852985 B CN101852985 B CN 101852985B
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alignment mark
substrate
metal level
making
part photoresistance
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CN101852985A (zh
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骆世平
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073Alignment marks and their environment
    • G03F9/7084Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073Alignment marks and their environment
    • G03F9/708Mark formation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/02Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
    • B29C43/021Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
    • B29C2043/023Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface having a plurality of grooves
    • B29C2043/025Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface having a plurality of grooves forming a microstructure, i.e. fine patterning
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/32Component parts, details or accessories; Auxiliary operations
    • B29C43/36Moulds for making articles of definite length, i.e. discrete articles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29KINDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2021/00Use of unspecified rubbers as moulding material

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

本发明涉及一种基板对位标记的制作方法,其包括:提供一块基板,该基板具有一个表面,该表面上形成有一个凹陷;在该凹陷内部设置光阻层;曝光、显影,以使该光阻层中部分光阻被保留;在该部分光阻的周围设置金属层;去除该部分光阻,留下该金属层,以形成金属层围绕的对位标记。

Description

一种基板对位标记的制作方法
技术领域
本发明涉及一种基板对位标记的制作方法,尤其涉及一种用来制作微小元件压印模仁对位标记的制作方法。
背景技术
随着摄像技术的发展,镜头模组与各种便携式电子装置如手机、摄像机、电脑等的结合,更是得到众多消费者的青睐,所以市场对小型化镜头模组的需求增加。
目前小型化镜头模组多采用晶圆级镜片,其一般是利用精密模仁压印出微型镜片阵列,然后与硅晶圆制成的影像感测器电连接、封装,然后切割,得到的每一小单元都是一个晶圆级的相机模组。然而,得到的相机模组也常常因两个镜片的光轴并不重合而出现偏心情况,偏心的存在严重影响该相机模组所拍摄影像的品质。
为了减小偏心,通常以机械加工方式在模仁的基板上制作对位标记。然而,由于刀具刀刃较厚,所以,以机械加工方式在基板上无法制作尺寸较小的对位标记。
发明内容
有鉴于此,有必要提供一种尺寸较小的基板对位标记的制作方法。
一种基板对位标记的制作方法,其包括:提供一块基板,该基板具有一个表面,该表面上形成有一个凹陷;在该凹陷内部设置光阻层;曝光、显影,以使该光阻层中部分光阻被保留;在该部分光阻的周围设置金属层;去除该部分光阻,留下该金属层,以形成金属层围绕的对位标记。
与现有技术相比,本发明提供的基板对位标记的制作方法中,曝光、显影可以使得尺寸较小的部分光阻留下,从而使得去除该部分光阻后形成的对位标记尺寸也较小。
附图说明
图1是本发明实施例中基板对位标记的流程图。
图2是本发明实施例中基板的示意图,该基板具有一个凹陷。
图3是设置有光阻层的基板的示意图。
图4是对图3中的光阻层进行曝光的示意图。
图5是将曝光后的光阻层进行显影后的示意图,该光阻层显影后仅剩下部分光阻。
图6是在该部分光阻周围设置金属层的示意图。
图7是去除该部分光阻后的示意图。
图8是对该金属层进行抛光后的示意图。
具体实施方式
下面将结合附图对本发明作进一步详细说明。
请参阅图1,其为本发明实施例中基板对位标记制作方法的流程图。该方法包括以下步骤:
一种基板对位标记的制作方法,其包括:
提供一块基板,该基板具有一个表面,该表面上形成有一个凹陷;
在该凹陷内部设置光阻层;
曝光、显影,以使该光阻层中部分光阻被保留;
在该部分光阻的周围设置金属层;
去除该部分光阻,留下该金属层,以形成金属层围绕的对位标记。
下面将以对位标记20为例对本发明实施例中基板对位标记制作方法进行详细说明。
如图2所示,首先提供一块基板10。该基板10具有一个表面101及一个形成于该表面101上的凹陷103。本实施例中,采用车削方法在该基板10的表面101上形成凹陷103,该凹陷103呈半球状,其深度约为200微米,开口半径约为500微米。当然,该凹陷103也可以呈圆柱状、三棱柱状、四棱柱状、五棱柱状或者六棱柱状。当然,该凹陷103的深度及该凹陷103的开口半径应根据实际需要来确定。
如图3所示,在该基板10的表面101及凹陷103的内部设置光阻层105。本实施例中,采用旋涂方法在该基板10的表面101及凹陷103内设置厚度约为600微米的负光阻层105。当然,也可以采用喷涂方法在该基板10的表面101及凹陷103内设置正光阻层。
如图4及图5所示,对该光阻层105进行曝光、显影,以使位于该凹陷103内的光阻层105中部分光阻107被保留。优选地,本实施例中,该部分光阻107呈圆柱状,突出该表面101,且其直径约为15微米。当然,该部分光阻107也可以为三棱柱、四棱柱、五棱柱、六棱柱或者“十字”形等其它几何形状,只要其平行于该表面101的截面上任意两点之间的距离小于20微米,以使对位时,两个对位标记20之间的误差小於1微米即可。
如图6所示,在该部分光阻107周围设置金属层109。优选地,本实施例中,该部分光阻107突出该金属层109,该金属层109的材料为铜。当然,该金属层109的材料也可以为铝、镍、铜镍合金、铜铝合金等。当然,该部分光阻107也可以与该金属层109相平齐。
如图7所示,去除该部分光阻107,留下该金属层109,以形成金属层109围绕的对位标记20。本实施例中,采用氢氧化钠溶液将该部分光阻107去除,且由于部分光阻107呈圆柱状,因此,该对位标记20为圆孔。
如图8所示,为了使得该金属层109表面平坦,对该金属层109进行抛光处理。
该基板对位标记的制作方法中,曝光、显影可以使得尺寸较小的部分光阻107留下,从而使得去除该部分光阻107后形成的对位标记20的尺寸也较小。
对该金属层109进行抛光处理后,会将制作好对位标记20的基板10进行再加工,以在该基板10上形成多个限定微小光学元件的图案部,从而可以压印出具有对位标记的微小光学元件,进而减小两组微小光学元件偏心的可能。
另外,本领域技术人员还可以在本发明精神内做其它变化,当然,这些依据本发明精神所做的变化,都应包含在本发明所要求保护的范围之内。

Claims (6)

1.一种基板对位标记的制作方法,其包括:
提供一块基板,该基板具有一个表面,该表面上形成有一个凹陷;
在该凹陷内部设置光阻层;
曝光、显影,以使该光阻层中部分光阻被保留;
在该部分光阻的周围设置金属层;
去除该部分光阻,留下该金属层,以形成金属层围绕的对位标记。
2.如权利要求1所述的基板对位标记的制作方法,其特征在于:采用车削方法在该基板的表面上形成该凹陷。
3.如权利要求1所述的基板对位标记的制作方法,其特征在于:该凹陷呈半球状、圆柱状或者棱柱状。
4.如权利要求1所述的基板对位标记的制作方法,其特征在于:该部分光阻呈圆柱状、棱柱状或者“十”字形状。
5.如权利要求1所述的基板对位标记的制作方法,其特征在于:在去除该部分光阻,留下该金属层步骤之后,对该金属层进行抛光处理。
6.如权利要求1所述的基板对位标记的制作方法,其特征在于:该金属层为铜、铝、镍、铜镍合金或者铜铝合金。
CN2009103011986A 2009-03-30 2009-03-30 一种基板对位标记的制作方法 Expired - Fee Related CN101852985B (zh)

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US12/634,803 US8071276B2 (en) 2009-03-30 2009-12-10 Method for making alignment mark on substrate

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CN101875532B (zh) * 2009-04-30 2013-03-20 鸿富锦精密工业(深圳)有限公司 镜片模仁的制造方法
CN103426811B (zh) * 2012-05-15 2016-02-17 无锡华润上华科技有限公司 半导体器件制造方法及半导体器件

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JP4075316B2 (ja) * 2001-03-30 2008-04-16 富士電機機器制御株式会社 Ct付きサーマルリレー
US6979526B2 (en) * 2002-06-03 2005-12-27 Infineon Technologies Ag Lithography alignment and overlay measurement marks formed by resist mask blocking for MRAMs
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CN101051183A (zh) * 2006-01-18 2007-10-10 株式会社日立制作所 图案形成方法和模具
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