CN101845610B - Continuous vertical hot evaporation metal film coating method - Google Patents
Continuous vertical hot evaporation metal film coating method Download PDFInfo
- Publication number
- CN101845610B CN101845610B CN2010101931924A CN201010193192A CN101845610B CN 101845610 B CN101845610 B CN 101845610B CN 2010101931924 A CN2010101931924 A CN 2010101931924A CN 201010193192 A CN201010193192 A CN 201010193192A CN 101845610 B CN101845610 B CN 101845610B
- Authority
- CN
- China
- Prior art keywords
- slit
- metal
- metal film
- coating method
- depth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The invention discloses a novel continuous vertical hot evaporation metal film coating method. Metal film materials are coated on samples above a hot evaporation source in a vapor deposition way through a hot evaporation source at the bottom. The invention is characterized in that a slit type straightening device is arranged between the hot evaporation source and a sample conveying mechanism, divergent metal molecules sent from the hot evaporation source are filtered, and metal molecule flows vertically facing substrate materials of samples are formed, wherein the depth-to-width ratio of the slit of the straightening device is smaller than a half of the depth-to-width ratio of a surface relief sculpture structure of the substrate materials of the samples. In the application and the implementation of the invention, only the metal molecules flying approximately in the vertical direction are allowed to be deposited on the surface of substrate materials, so the invention is favorable for reducing or eliminating the side wall deposition of the surface relief sculpture structure on substrate materials, avoids the interconnection of the top of the relief sculpture structure and metal films at the bottom, and enhances double-layer metal wire grating structures required by the metal wire grating formation polarization technology.
Description
Technical field
The present invention relates to a kind of method of metal coating, relate in particular to a kind of restriction metallic molecule heading, be used for realizing the continuous vertical hot evaporation metal film coating method at the large-area substrates material surface.This method is used at the metal coating of substrate material surface embossment structure, can solve the problem in embossment structure top layer and the interconnection of underlying metal plated film.
Background technology
The wire grating polarization technology utilizes surperficial double-level-metal wire grid construction to realize polarization of incident light component filteration.The making method of double-level-metal wiregrating is: the embossment structure that at first forms the wiregrating form at substrate material surface by micro-nano manufacturing method, the width of wiregrating forms double-metal layer by metal coating in the upper surface and the open bottom of embossment structure then at micron or less than the yardstick of micron dimension.But present thermal evaporation metal film coating method.As shown in Figure 1, be at a some evaporation source 101, make the melting of metal evaporation by heating, metallic molecule flies to the specimen holder 102 above the evaporation source under hot kinetic energy drives, form film at sample 103 surface depositions.The metallic molecule 104 that is formed by an evaporation source 101 evaporations is sample 103 surfaces (as shown in Figure 1) that divergent shape flies to the top, and for the small area sample of evaporation source vertical direction, the homogeneity and the directivity of deposit film thickness are better.But for the big area sample, leave the sample surfaces of evaporation source vertical direction central zone, the thickness evenness of metallic film and deposition perpendicularity variation.The actual surperficial double-level-metal wiregrating that forms will be as shown in Figure 2.Because the non-perpendicular deposition of metallic molecule, form deposit metal films 202 at the sidewall of substrate surface embossment structure 201, cause the upper surface of embossment structure interconnection with the metallic film of open bottom, make the polarization function inefficacy of wire grating.
Summary of the invention
For overcoming the defective of prior art, avoid wire grating when carrying out metal coating, the embossment structure upper surface to take place and the open bottom metallic film interconnection, influence the filtration of incident light polarization component, a kind of metal film coating method of continuous vertical hot evaporation has been proposed.
For realizing above-mentioned purpose of the present invention, its technical solution is:
A kind of metal film coating method of continuous vertical hot evaporation, metal coating materials evaporation is arrived on the sample of thermal evaporation sources top by the bottom thermal evaporation sources, it is characterized in that: between thermal evaporation sources and sample delivery mechanism, establish a slit-type collimator apparatus, to filter from the diversity metallic molecule that thermal evaporation sources penetrates, form vertical metallic molecule stream towards sample substrates; The slit depth-to-width ratio of wherein said collimator apparatus is less than half of the depth-to-width ratio of sample substrates surface relief structure.
Further, the metal film coating method of aforementioned a kind of continuous vertical hot evaporation, wherein this thermal evaporation sources is that the crucible word order corresponding to the collimator apparatus slit forms array architecture more than one.And those crucibles are how much linear structures, longitudinal size greater than lateral dimension and be complementary by the wide cut of plated film sample substrates, lateral dimension is associated with the depth-to-width ratio of described sample substrates surface relief structure and the depth-to-width ratio of described collimator apparatus slit; And satisfy between the lateral dimension w of the distance D of this collimator apparatus lower surface and thermal evaporation sources and evaporation source crucible:
Wherein H is that slit depth, G are slit width.
Further, the metal film coating method of aforementioned a kind of continuous vertical hot evaporation, wherein the slit of this collimator apparatus is spliced for the flat board by two band grooves, and the flat board more than two is spliced to form linearly aligned slit in turn.
Further, the metal film coating method of aforementioned a kind of continuous vertical hot evaporation, wherein the distance L between the evaporation of this sample substrates surface and described collimator apparatus upper surface satisfies: L≤0.5H, wherein H is a slit depth.
Further, the metal film coating method of aforementioned a kind of continuous vertical hot evaporation, wherein this sample delivery mechanism is by described slit-type collimator apparatus top by the twin shaft winding method.
Further, the metal film coating method of aforementioned a kind of continuous vertical hot evaporation, wherein the depth-to-width ratio of this sample substrates surface relief structure is at least greater than 1.
The utilization of the invention described above technical scheme, the advantage that compared with prior art has is: the present invention only allows to deposit to substrate material surface near the metallic molecule of vertical direction flight, help lowering or eliminating the side wall deposition of substrate material surface embossment structure, avoid the metallic film interconnection of embossment structure top and bottom, strengthen forming the needed double-level-metal wire grid construction of wire grating polarization technology.
For the metal film coating method that makes a kind of continuous vertical hot evaporation of the present invention is easier to understand the practicality of its substantive distinguishing features and institute's tool thereof, below constipation close accompanying drawing the present invention's one preferable specific embodiment be described in further detail.But following description and explanation about embodiment do not constitute any limitation the protection domain of patent application of the present invention.
Description of drawings
Fig. 1 is the state of the art synoptic diagram that prior art point evaporation source carries out metal coating;
Fig. 2 is the double-level-metal wire grid construction synoptic diagram that adopts the prior art metal film coating method to form;
Fig. 3 is the structural representation of continuous vertical hot evaporation metal coating device of the present invention;
Fig. 4 is the double-level-metal wire grid construction synoptic diagram that adopts metal film coating method of the present invention to form;
Fig. 5 is the synoptic diagram of each parts relative position shown in Figure 3;
Fig. 6 is slit-type collimator apparatus of the present invention one section a three-dimensional structure synoptic diagram wherein.
Embodiment
Make in the technology of wire grating for avoiding prior art, embossment structure upper surface and the interconnected phenomenon of open bottom metallic film take place when carrying out metal coating, influence the filtration of incident light polarization component, proposed a kind of metal film coating method of continuous vertical hot evaporation.
Technology from traditional film coating method: the conventional some evaporation source that adopts carries out from bottom to top metallic film evaporation on the small area sample substrates, can obtain homogeneity, the preferable deposit film thickness of directivity.But for the big area sample, from thermal evaporation sources vertical direction central zone sample surfaces far away more, it is poor more that the thickness evenness of metallic film and deposition direction just become.Trace it to its cause and be: the metallic molecule jet direction of divergent shape very easily deposits to the inner side-wall of sample substrates embossment structure, thereby causes the inefficacy of double-level-metal wiregrating.
The researchist for the diversity of restriction thermal evaporation sources ejaculation metallic molecule, the present invention proposes a kind of metal film coating method of continuous vertical hot evaporation after recognizing this point.This metal coating technology is based on conventional art, remain a kind of evaporation, depositing operation from bottom to top, different is: establish a slit-type collimator apparatus between thermal evaporation sources and sample delivery mechanism, to filter from the diversity metallic molecule that thermal evaporation sources penetrates, form vertical metallic molecule stream towards sample substrates.Its principle is: the metallic molecule that the evaporation of linear pattern metal fever evaporation source forms is under hot kinetic energy drives, fly to the base material of evaporation source top with divergence form, the collimator apparatus that has a slit stops the metallic molecule of wide-angle heading, have only metallic molecule can arrive substrate material surface by slit, the formation of deposits metallic film near movement in vertical direction.The deposition of large-area substrates material realizes by the mode of continuous scrolling transport substrate material.As shown in Figure 4, the actual surperficial double-level-metal wire grid construction that forms is at the sidewall formation deposit metal films 402 of substrate surface embossment structure 401.Find out that clearly because the vertical deposition of metallic molecule, the upper surface of embossment structure does not connect together fully with the metallic film of open bottom, thereby makes stable, the significant polarization function of having of wire grating.
As preferred implementation of the present invention, the present invention adopts the collimator apparatus that has slit-shaped openings, cooperates with straight line line style metal evaporation sources and spirally wound base material continuous conveying mechanism, constitutes continuous vertical hot evaporation metal coating system.According to the requirement of plated film speed, evaporation source and collimating slit can be single, also can be array.As shown in Figure 3, be the structural representation of continuous vertical hot evaporation metal coating device of the present invention.From shown in the figure as seen: this line style metal fever evaporation source 301 is corresponding to the crucible word order array format of collimator apparatus slit more than one, the length of each thermal evaporation sources and the fabric width of base material are complementary, and number is identical with the slit number of collimator apparatus 302; And this collimator apparatus 302 is between thermal evaporation sources 301 and sample substrate 304, the length of the length of slit and linear pattern evaporation source coupling; The degree of depth of slit and width need satisfy the verticality requirement of evaporation; In addition, this base material continuous conveying mechanism 303 is two roller volume to volume forms, and the sample substrates folk prescription is to carrying by the collimating slit top, and transfer rate and deposit metal films speed and needed deposit thickness are complementary.
Specifically: as shown in Figure 5, represented the synoptic diagram of each parts relative position, i.e. the geometry and the relative position of linear pattern thermal evaporation sources 501, slit-type collimator apparatus 502 and substrate surface embossment structure 503.For guaranteeing the vertical deposition of thermal evaporation metallic molecule, the condition that needs to satisfy is:
First: the ratio of slit depth and width should promptly satisfy less than half of the depth-to-width ratio of substrate surface embossment structure
Wherein G is the slit width of slit-type collimator apparatus, and H is a slit depth, and g is the minimal openings width of substrate surface embossment structure, and h is the full depth of substrate surface embossment structure;
Second: the distance D of collimator apparatus end face and described linear pattern thermal evaporation sources, and should satisfy following relation between the lateral dimension w of evaporation source:
The 3rd: the end face distance L that base material is evaporated coated surface and described slit-type collimator apparatus should satisfy following relation: L≤0.5H.
For further guaranteeing to form discrete double-layer metal film on the substrate surface embossment structure, the depth-to-width ratio of embossment structure is generally greater than 1, and promptly the degree of depth of embossment structure is greater than A/F.According to above-described condition, the degree of depth that requires the slit collimation device is 2 times of its width at least.Acquire a certain degree of difficulty and process such slit, and depth-to-width ratio is big more, difficulty of processing is high more.For this reason, the present invention adopts biplate groove elements array mode to form slit, specifically as shown in Figure 6.601 and 602 is two elements of processing groove, the material of element generally be can high precision the metallic substance of processing.Two elements that have groove are superimposed, can form slit with high aspect ratio.And the flat board more than two is spliced to form linearly aligned slit in turn.
Below only be the sub-fraction in the numerous concrete exemplary applications of the present invention, protection scope of the present invention is not constituted any limitation.All employing equivalents or equivalence are replaced and the technical scheme of formation, all drop within the rights protection scope of the present invention.
Claims (5)
1. the metal film coating method of a continuous vertical hot evaporation, metal coating materials evaporation is arrived on the sample of thermal evaporation sources top by the bottom thermal evaporation sources, it is characterized in that: between thermal evaporation sources and sample delivery mechanism, establish a slit-type collimator apparatus, to filter from the diversity metallic molecule that thermal evaporation sources penetrates, form vertical metallic molecule stream towards sample substrates; The slit depth-to-width ratio of wherein said collimator apparatus satisfies between the lateral dimension w of the distance D of described collimator apparatus lower surface and thermal evaporation sources and evaporation source crucible less than half of the depth-to-width ratio of sample substrates surface relief structure:
Wherein H is that slit depth, G are slit width, and the distance L between the evaporation of described sample substrates surface and described collimator apparatus upper surface satisfies: L≤0.5H, wherein H is a slit depth.
2. the metal film coating method of a kind of continuous vertical hot evaporation according to claim 1 is characterized in that: described thermal evaporation sources is that the crucible word order corresponding to the collimator apparatus slit forms array architecture more than one.
3. the metal film coating method of a kind of continuous vertical hot evaporation according to claim 1 is characterized in that: the slit of described collimator apparatus is spliced for the flat board by two band grooves, and the flat board more than two is spliced to form linearly aligned slit in turn.
4. the metal film coating method of a kind of continuous vertical hot evaporation according to claim 1 is characterized in that: described sample delivery mechanism for by the twin shaft winding method by described slit-type collimator apparatus top.
5. the metal film coating method of a kind of continuous vertical hot evaporation according to claim 1, it is characterized in that: the depth-to-width ratio of described sample substrates surface relief structure is at least greater than 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101931924A CN101845610B (en) | 2010-06-07 | 2010-06-07 | Continuous vertical hot evaporation metal film coating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101931924A CN101845610B (en) | 2010-06-07 | 2010-06-07 | Continuous vertical hot evaporation metal film coating method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101845610A CN101845610A (en) | 2010-09-29 |
| CN101845610B true CN101845610B (en) | 2011-12-07 |
Family
ID=42770426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101931924A Expired - Fee Related CN101845610B (en) | 2010-06-07 | 2010-06-07 | Continuous vertical hot evaporation metal film coating method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101845610B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102053249B1 (en) * | 2013-05-02 | 2020-01-09 | 삼성디스플레이 주식회사 | Deposition source and deposition apparatus including the same |
| CN105132868B (en) | 2015-09-25 | 2019-09-27 | 京东方科技集团股份有限公司 | Evaporation source and preparation method thereof, evaporation coating method |
| JP2017173742A (en) * | 2016-03-25 | 2017-09-28 | 大日本印刷株式会社 | Method of manufacturing polarizer |
| CN106435483A (en) * | 2016-12-12 | 2017-02-22 | 福州大学 | High-accuracy organic light-emitting device (OLED) component preparation device and method |
| CN107012434A (en) * | 2017-05-27 | 2017-08-04 | 武汉天马微电子有限公司 | A kind of evaporation source and vacuum deposition apparatus |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1038129A (en) * | 1988-05-31 | 1989-12-20 | 基也辅综合技术研究所 | Apparatus for forming films by evaporation in vacuum |
| CN1104262A (en) * | 1993-09-17 | 1995-06-28 | 凡利安同仁股份有限公司 | Method for controlling a collimated sputtering source |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090308732A1 (en) * | 2008-06-17 | 2009-12-17 | Applied Materials, Inc. | Apparatus and method for uniform deposition |
-
2010
- 2010-06-07 CN CN2010101931924A patent/CN101845610B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1038129A (en) * | 1988-05-31 | 1989-12-20 | 基也辅综合技术研究所 | Apparatus for forming films by evaporation in vacuum |
| CN1104262A (en) * | 1993-09-17 | 1995-06-28 | 凡利安同仁股份有限公司 | Method for controlling a collimated sputtering source |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101845610A (en) | 2010-09-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101845610B (en) | Continuous vertical hot evaporation metal film coating method | |
| Hawkeye et al. | Glancing angle deposition of thin films: engineering the nanoscale | |
| Kawaharamura | Physics on development of open-air atmospheric pressure thin film fabrication technique using mist droplets: Control of precursor flow | |
| Li et al. | Rectification of mobile Leidenfrost droplets by planar ratchets | |
| US6938325B2 (en) | Methods of fabricating electromagnetic meta-materials | |
| CN101807613B (en) | Amorphous silicon solar cell with three-dimensional photonic crystal serving as back reflecting layer and manufacturing method thereof | |
| Duan et al. | General synthesis of 2D ordered hollow sphere arrays based on nonshadow deposition dominated colloidal lithography | |
| CN102066009A (en) | Coatings | |
| KR102197243B1 (en) | Laminate and gas barrier film | |
| Butt et al. | Optical thin films fabrication techniques—Towards a low-cost solution for the integrated photonic platform: A review of the current status | |
| KR20150022858A (en) | Electrostatic method and apparatus to form low-particulate defect thin glass sheets | |
| Hegedüs et al. | Silicon nitride and hydrogenated silicon nitride thin films: A review of fabrication methods and applications | |
| CN105271110A (en) | Method of manufacturing dense nano granular film and ordered nanowire film by using coffee-ring effects | |
| CN102473752A (en) | Solar cell and solar cell device | |
| GB1208962A (en) | Method of fabricating thin films and membranes | |
| CN105372728A (en) | One-dimension, two-dimension or three-dimension nanometer gap array having Raman enhancement property and preparation method for the same | |
| CN103343317A (en) | Preparation method of TiO2 nanoparticle antireflective film based on nanocluster beam deposition system | |
| TWI292340B (en) | Antireflective transparent zeolite hardcoat film, method for fabricating the same, and solution capable of forming said transparent zeolite film | |
| JP2009272317A5 (en) | ||
| CN101041889B (en) | Film plating method | |
| US9989687B2 (en) | Wave plate having consistent birefringence properties across the visible spectrum and manufacturing method for same | |
| CN102096123A (en) | Method for preparing super-resolution imaging lens with planar zooming magnification | |
| CN102654458A (en) | Method for fabricating waveguide type surface plasma resonance sensor chip | |
| CN103993260A (en) | Combined mask | |
| JP2008224922A5 (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS(SIN Free format text: FORMER OWNER: CUI ZHENG Effective date: 20121128 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20121128 Address after: 215123 Suzhou Industrial Park, Jiangsu Province, if the waterway No. 398, No. Patentee after: Suzhou Institute of Nano-Tech and Bionics (SINANO), Chinese Academy of Sciences Address before: Linquan Road Industrial Park in Suzhou city in Jiangsu province 215123 MBA No. 621 room apartment 912 Patentee before: Cui Zheng |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111207 Termination date: 20150607 |
|
| EXPY | Termination of patent right or utility model |