CN106435483A - High-accuracy organic light-emitting device (OLED) component preparation device and method - Google Patents
High-accuracy organic light-emitting device (OLED) component preparation device and method Download PDFInfo
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- CN106435483A CN106435483A CN201611137869.6A CN201611137869A CN106435483A CN 106435483 A CN106435483 A CN 106435483A CN 201611137869 A CN201611137869 A CN 201611137869A CN 106435483 A CN106435483 A CN 106435483A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
The invention relates to a high-accuracy organic light-emitting device (OLED) component preparation device and method. The device comprises an evaporation source array, a substrate, a transmission device and a mask plate, and the mask plate is matched with the evaporation source array. A plurality of evaporation sources are arrayed to form the evaporation source array. Materials in the evaporation sources are evaporated vertically upwards to the substrate. Evaporating-plating of the substrate is completed due to the fact that the substrate or the evaporation source array are driven by the transmission device to move, so that an OLED component is formed. According to the high-accuracy OLED component preparation device and method, the distance between the substrate and the mask plate is enlarged, and the influence exerted on evaporating-plating by the mask plate is reduced; the distances between the substrate and the evaporation sources are reduced, so that the evaporation materials are less diffused into the evaporating environment, and the evaporation materials are saved; and in addition, the intervals between every two evaporation sources are reduced, the intervals between every two holes in the mask plate are reduced, the point-to-point evaporation is achieved, the number of subpixels within a unit area is increased, and the preparation of the OLED component with high accuracy is achieved.
Description
Technical field
The invention belongs to OLED field is and in particular to a kind of preparation facilitiess of High-precision O LED component and preparation method.
Background technology
Organic electroluminescence device (Organic light-emitting device, OLED) is acknowledged as of future generation aobvious
Show the pioneer in field, OLED has active and lights, and panel lights, and visual angle is wide, and response time is short, and luminous efficiency is high, colour gamut
Width, running voltage is low, and thickness of detector is thin, can be made into curved panel, and processing technology is relatively easy, the low characteristic of cost.
OLED, as a kind of area source, due to the luminous access expansion light of OLED, environmental protection, can use evaporation, spin coating, ion
The simple process such as beam sputtering are prepared and can be deposited on flexible substrates, are considered in terms of solid-state illumination to have great valency
Value.
White light is made up of to purple continuous spectrum red, and in display device, we adopt RGB i.e. tri- kinds of face of RGB
The luminance mix such as the vision of color are being in harmonious proportion out white light.Display screen is made up of various pixels, in order to make each independent
Pixel can show shades of colour it is necessary to it is decomposed into the sub-pixel of three one-levels lower than pixel of RGB.?
That is, three sub-pixels constitute an entirety, i.e. colour element.When needing to show different colours, three sub-pixels
Color respectively with different Intensity LEDs, because the size of sub-pixel is very little, required for visually will being mixed into.Single
The number that plane amasss interior sub-pixel is more, and the precision of OLED display device will be higher.
Existing evaporation coating method such as puts the evaporation sources such as evaporation source, facet evaporation source, ring-type evaporation source evaporation small molecule material
During material, the distance due to evaporation source to each position of base plan has difference, with the prolongation of evaporation time, the difference on substrate
Position, obtains film layer in uneven thickness.OLED display is according to the difference using material. method for manufacturing also very much not phase
With.If using low molecule material, mainly organic display thin film is formed by vacuum deposition method. lose to not make image produce
Burnt problem. adopt shadow mask techniques or mask plate technique at present.In this technology, substrate almost nestles up mask plate, to mask plate
Material and making require very high it is difficult to prepare high-precision OLED, and evaporation source and substrate larger distance cause material
The waste of material.
Content of the invention
It is an object of the invention to provide a kind of preparation facilitiess of High-precision O LED component and preparation method, the increase of this device
Substrate and the distance of mask plate, reduce the impact to evaporation for the mask plate；Reduce the distance of evaporation source and substrate so that evaporating material
Material is less diffused in evaporitic environment, has saved evaporation material；In addition, also reducing evaporation source spacing, reduce mask plate hole
Spacing, it is possible to achieve point-to-point evaporation, the number increasing sub-pixel in unit area is it is achieved that the system of High-precision O LED component
Standby.
For achieving the above object, the technical scheme is that：A kind of preparation facilitiess of High-precision O LED component, including steaming
Rise array, substrate, actuating device, and evaporation source array is formed by the arrangement of several evaporation sources, and the material in evaporation source is heated shape
Become molecular flow to be evaporated to substrate vertically upward, drive the movement of substrate or evaporation source array by actuating device, completing substrate
Evaporation, and then form OLED.
In an embodiment of the present invention, only fill a sub-pixel evaporation material in each evaporation source in described evaporation source array
Material, three evaporation sources are a fundamental unit, and three evaporation sources place the sub-pixel evaporation material of three kinds of colors of RGB respectively
Material, the evaporation source position that in a fundamental unit, placement three kinds of colors of RGB send out sub-pixel material is adjustable.
In an embodiment of the present invention, each evaporation source in described evaporation source array is individually controlled each other.
In an embodiment of the present invention, a diameter of 1 μm ~ 200 μm of the evaporator head of described evaporation source, evaporator head spacing is 5 μm
~400μm.
In an embodiment of the present invention, the sub-pixel evaporation material placed in described evaporation source evaporates vertically upward；Described
Mask plate is placed in front of substrate, and mask plate is 0 ~ 500 μm with the distance of substrate, and the distance of evaporator head to substrate is 10 μm ~ 10cm.
In an embodiment of the present invention, in described evaporation source array, each evaporation source all only places a kind of evaporation material；Institute
State evaporation material include cathode material, anode material, electron injecting layer material, electron transport layer materials, hole injection layer material,
Hole transport layer material, emitting layer material.
In an embodiment of the present invention, a diameter of 1 μm ~ 200 μm of the evaporator head of described evaporation source, evaporator head spacing is 5 μm
~400μm.
In an embodiment of the present invention, the evaporation material placed in described evaporation source evaporates vertically upward；Described mask plate
It is placed in front of substrate, mask plate is 0 ~ 500 μm with the distance of substrate, the distance of evaporator head to substrate is 10 μm ~ 10cm.
The present invention also provides a kind of High-precision O LED component preparation method based on said apparatus, comprises the steps,
S1, process substrate：After base-plate cleaning, dry or dry up；
S2, each functional layer of evaporation：Substrate after step S1 is processed is placed in vacuum intracavity, makes the material in evaporation source by heating
Material is evaporated vertically upward by thermosetting molecular flow, and drives the movement of substrate or evaporation source array by actuating device, complete successively
Become the evaporation of each functional layer, thus forming OLED.
Compared to prior art, the invention has the advantages that：
（1）Reduce evaporator head spacing, reduce mask plate hole spacing, it is possible to achieve point-to-point evaporation, increased unit area
The number of interior sub-pixel, can prepare High-precision O LED component.
（2）Reduce the distance of evaporation source and substrate, vertical evaporation is so that evaporation material is less diffused in evaporitic environment
In, save evaporation material；
（3）Increase the distance of substrate and mask plate, reduce the impact to evaporation for the mask plate, and mask plate can be carried out at heating
Reason；
（4）Precise control film forming thickness, structure and composition can be realized.
Brief description
Fig. 1 is apparatus of the present invention schematic diagram.
Fig. 2 is apparatus of the present invention evaporation effect figure.
Fig. 3 is the 3D observation figure of substrate bank of the present invention.
In figure：101 is substrate；102 is the space on mask plate；103 is mask plate；104 is evaporator head；105 is evaporation
Source；201 is red sub-pixel point；202 is green sub-pixels point；203 is blue subpixels point.
Specific embodiment
1-3 below in conjunction with the accompanying drawings, is specifically described to technical scheme.
A kind of preparation facilitiess of the High-precision O LED component of the present invention：Including evaporation source array, substrate, actuating device, steam
The array that rises is formed by the arrangement of several evaporation sources, and the material in evaporation source is evaporated to base vertically upward by thermosetting molecular flow
Plate, is driven the movement of substrate or evaporation source array, the evaporation of completing substrate, and then forms OLED by actuating device.
A sub-pixel evaporation material is only filled, three evaporation sources are a base in each evaporation source in described evaporation source array
Plinth unit, and three evaporation sources place the sub-pixel evaporation material of three kinds of colors of RGB respectively, place in a fundamental unit
The evaporation source position that three kinds of colors of RGB send out sub-pixel material is adjustable.Each evaporation source in described evaporation source array is mutual
Between be individually controlled.
A diameter of 1 μm ~ 200 μm of the evaporator head of described evaporation source, evaporator head spacing is 5 μm ~ 400 μm.Described evaporation source
The sub-pixel material of interior placement evaporates vertically upward；Described mask plate is placed in front of substrate, and the distance of mask plate and substrate is 0 ~
500 μm, the distance of evaporator head to substrate is 10 μm ~ 10cm.
In described evaporation source array, each evaporation source all only places a sub-pixel evaporation material；Described evaporation material includes
Cathode material, anode material, electron injecting layer material, electron transport layer materials, hole injection layer material, hole transmission layer material
Material, emitting layer material.
Present invention also offers a kind of High-precision O LED component preparation method based on said apparatus, comprise the steps,
S1, process substrate：After base-plate cleaning, dry or dry up；
S2, each functional layer of evaporation：Substrate after step S1 is processed is placed in vacuum intracavity, makes the material in evaporation source by heating
Material is evaporated vertically upward by thermosetting molecular flow, and drives the movement of substrate or evaporation source array by actuating device, complete successively
Become the evaporation of each functional layer, thus forming OLED.
Below be the present invention implement process.
The present invention provides a kind of preparation facilitiess of High-precision O LED component, as shown in Figure 1-2：101 is substrate, and 102 is to cover
Space on lamina membranacea, 103 is mask plate, and 104 is evaporator head, and 105 is evaporation source；201 is red sub-pixel point, and 202 is green
Sub-pixel point, 203 is blue subpixels point.
When the evaporation coating device adopting only has three evaporation sources, three evaporation sources are respectively put into sub- picture to be evaporated
Element evaporation material, substrate can have " groove "（bank）Structure, the material in evaporation source is through the space on mask plate vertically
It is deposited with corresponding bank, then plate whole substrate by the way of moving substrate or evaporation source.When the extension dress adopting
Put when there is multiple evaporation source, each evaporation source is respectively put into corresponding sub-pixel evaporation material it might even be possible to be evaporation
The evaporation material of OLED difference in functionality layer.
The key of device be each evaporation source evaporation material and evaporation rate must carry out independent control and instruction,
Or independent control and instruction can be carried out to the evaporation source of every row or each column, or evaporation source is selectively carried out independent
Control and indicate.
Embodiment 1
Organic electroluminescence device in the present embodiment（OLED）The evaporation of luminescent layer is for example：
（1）Process substrate：
Ito glass is carried out be cleaned by ultrasonic with each 10-15 minute, then the ITO glass that will wash successively with pure water, acetone, ethanol, pure water
Glass is put in baking oven and dries, or is dried up with nitrogen.Again plasma treatment or UV process are carried out to the dry substrate of cleaning.
（2）Evaporation luminescent layer：
The above-mentioned ito glass substrate with anode is placed in vacuum intracavity, substrate is directly covered with mask towards the surface of evaporation source
Version, substrate area is 5cm*5cm；The array of mask plate is 96*64, selects the combination of evaporator head according to mask plate array pattern
Number is a row 64, a diameter of 100 μm of evaporator head, and the spacing of evaporator head is depending on the spacing of 64 sub-pixels in mask plate；Steaming
Send out and in head, put these three light emitting sub-pixel materials of red, green, blue in order successively, the distance of evaporator head to substrate is 5cm.To steaming
Rise after carrying out being heated to the evaporating temperature of luminescent material so that sub-pixel material is subject to thermal evaporation to pass through the figure on mask plate empty
Gap, is vertically plated on substrate surface.Evaporator head group is combined in and at the uniform velocity moves in the horizontal direction in base station plane, and translational speed is
1cm/min, 5min can complete the evaporation of luminescent layer.
Above evaporation conditionses are in 2-3*10-3Carry out under the vacuum environment of Pa.
Embodiment 2
Organic electroluminescence device in the present embodiment（OLED）The structure being adopted can be：
Substrate/anode/hole injection layer（HIL）/ hole transmission layer（HTL）/ organic luminous layer（EML）/ electron transfer layer
（ETL）/ electron injecting layer（ETL）/ negative electrode.
The structure that in specific the present embodiment, structure organic electroluminescence device is adopted is such as：
ITO/HAT(CN)6/NPB/DPVBi/Bphen/LiF/Al
The preparation method of the organic electroluminescence device of the present embodiment is as follows：
（1）Process substrate：
With pure water, acetone, ethanol, pure water, ito glass is cleaned by ultrasonic successively, more washed ito glass is put in baking oven
Middle drying, or dried up with nitrogen；Substrate can be carried out with plasma treatment or UV process.
（2）It is deposited with each functional layer：
The above-mentioned ito glass substrate with anode is placed in vacuum intracavity, is deposited with hole injection layer successively（HIL）, hole transport
Layer（HTL）, organic luminous layer（EML）, electron transfer layer（ETL）, electron injecting layer（ETL）, negative electrode.
The above-mentioned ito glass substrate with " groove " bank is placed in vacuum intracavity, on substrate, the number of bank is 96*64,
Its a size of 343 μm of horizontal pixel pitch, 350 μm of vertical pixel pitch, the number of combinations of evaporator head is a row 64, evaporation
A diameter of 50 μm, the spacing of evaporator head is 300 μm；Evaporator head is 500 μm to the distance of substrate.In evaporator head in order according to
Secondary put these three light emitting sub-pixel materials of red, green, blue, after evaporation source is carried out be heated to the evaporating temperature of luminescent material, make
Obtain sub-pixel material and be subject to thermal evaporation, be vertically plated on substrate.In the case of not placing mask plate, evaporator head is in evaporation one
After 64 sub-pixels of row, stop evaporation, evaporator head group is combined in base station plane, first move down along vertical direction, Ran Houyan
The lower section that horizontal direction moves to next sub-pixel position, move up further along vertical direction, again heating evaporation a line
After 64 sub-pixels, stop evaporation, so repeat 96 times, until being evaporated 96*64 sub-pixel.Concrete translational speed and para-position
Mode can be completed by Design of System Software.
Above evaporation conditionses are in 2-3*10-3Carry out under the vacuum environment of Pa.
Embodiment 3
Organic electroluminescence device in the present embodiment（OLED）The structure being adopted can be：
Substrate/anode/hole injection layer（HIL）/ organic luminous layer（EML）/ electron injecting layer（ETL）/ negative electrode.
The structure that in specific the present embodiment, structure organic electroluminescence device is adopted is such as：
ITO/NPB/PFO/ZnO/Al
The preparation method of the organic electroluminescence device of the present embodiment is as follows：
（1）Process substrate：
With pure water, acetone, ethanol, pure water, ito glass is cleaned by ultrasonic successively, more washed ito glass is put in baking oven
Middle drying, or dried up with nitrogen；Substrate can be carried out with plasma treatment or UV process.
（2）It is deposited with each functional layer
The above-mentioned ito glass substrate with anode is placed in vacuum intracavity, is deposited with hole injection layer successively（HIL）, organic light emission
Layer（EML）, electron injecting layer（ETL）, negative electrode.
The above-mentioned ito glass substrate with " groove " bank is placed in vacuum intracavity, on substrate, the number of bank is 96*64,
Its a size of 343 μm of horizontal pixel pitch, 351 μm of vertical pixel pitch, the number of combinations of evaporator head is a row 64, evaporation
A diameter of 50 μm, the spacing of evaporator head is 300 μm；Evaporator head is 500 μm to the distance of substrate.In evaporator head in order according to
Secondary put these three light emitting sub-pixel materials of red, green, blue, after evaporation source is carried out be heated to the evaporating temperature of luminescent material, make
Obtain sub-pixel material and be subject to thermal evaporation, be vertically plated on substrate.In the case of not placing mask plate, evaporator head is in evaporation one
After 64 sub-pixels of row, stop evaporation, evaporator head group is combined in base station plane, first move down along vertical direction, Ran Houyan
The lower section that horizontal direction moves to next sub-pixel position, move up further along vertical direction, again heating evaporation a line
After 64 sub-pixels, stop evaporation, so repeat 96 times, until being evaporated 96*64 sub-pixel.Concrete translational speed and para-position
Mode can be completed by Design of System Software.
Above evaporation conditionses are in 2-3*10-3Carry out under the vacuum environment of Pa.
In embodiments of the present invention, the material of described negative electrode includes the low workfunction metal such as Mg, Ag, Al, Ca, or Indium sesquioxide.
Stannum（ITO）, gold etc. is as transparency electrode.
In embodiments of the present invention, the material of described anode includes Graphene and ITO, IZO, ZnO, Al:The electric conductivity such as ZnO
Good metal-oxide.The common metal material such as such as Au, Ag, Al, Ni, Pt is used equally to the anode of top emitting device.
In embodiments of the present invention, the material of described electron injecting layer adopts and includes the alkalinous metals such as lithium, lithium oxide, lithiumation
Compound, the alkaline metallorganics of doping；Also the alkali metal oxide of LiF, Cs2CO3, K2SiO3 etc., silicate, carbonic acid are included
Salt, the high-work-function metal such as fluoride.
In embodiments of the present invention, to include the electron mobilities such as TRZ, TAZ, BCP higher for the material of described electron transfer layer
Material；Also the compound-materials such as lithium compound, Oxadiazole class, triazole Triazole class are included.
In embodiments of the present invention, the material of described hole injection layer include CuPc, 2-TNATA, polyaniline,
PEDOT：PSS etc..
In embodiments of the present invention, the material of described hole transmission layer includes the higher material of the hole mobilities such as NPB, TPD
Material；Also include triaromatic amine（triarylamine）Class organic material.
In embodiments of the present invention, the material of described luminescent layer includes aluminium compound, indium complex compound, terres rares chemical combination
Thing, various fluorochrome, including conjugated system：（Poly-Phenylene-Vinylene class, Poly-Fluorene class, Poly-
Thiophene class）, macromolecular containing pigment, backbone chain type macromolecule, the material such as side chain type macromolecule.As Alq3, PFO, Ir
(ppy) 3 grade material.
The foregoing is only presently preferred embodiments of the present invention, all impartial changes done according to scope of the present invention patent with
Modify, all should belong to the covering scope of the present invention.
It is more than presently preferred embodiments of the present invention, all changes made according to technical solution of the present invention, produced function is made
With without departing from technical solution of the present invention scope when, belong to protection scope of the present invention.
Claims (9)
1. a kind of preparation facilitiess of High-precision O LED component it is characterised in that：Including evaporation source array, substrate, actuating device, steam
The array that rises is formed by the arrangement of several evaporation sources, and the material in evaporation source is evaporated to base vertically upward by thermosetting molecular flow
Plate, is driven the movement of substrate or evaporation source array, the evaporation of completing substrate, and then forms OLED by actuating device.
2. a kind of High-precision O LED component according to claim 1 preparation facilitiess it is characterised in that：Described evaporation source battle array
A sub-pixel evaporation material is only filled, three evaporation sources are a fundamental unit, and three evaporation sources in each evaporation source in row
Place the sub-pixel evaporation material of three kinds of colors of RGB respectively, place three kinds of colors of RGB in a fundamental unit and send out picture
The evaporation source position of cellulosic material is adjustable.
3. a kind of High-precision O LED component according to claim 1 preparation facilitiess it is characterised in that：Described evaporation source battle array
Each evaporation source in row is individually controlled each other.
4. the preparation facilitiess according to a kind of arbitrary described High-precision O LED component of claims 1 to 3 it is characterised in that：Described
A diameter of 1 μm ~ 200 μm of the evaporator head of evaporation source, evaporator head spacing is 5 μm ~ 400 μm.
5. a kind of High-precision O LED component according to claim 4 preparation facilitiess it is characterised in that：In described evaporation source
The sub-pixel evaporation material placed evaporates vertically upward；Described mask plate is placed in front of substrate, and mask plate is 0 with the distance of substrate
~ 500 μm, the distance of evaporator head to substrate is 10 μm ~ 10cm.
6. a kind of High-precision O LED component according to claim 1 preparation facilitiess it is characterised in that：Described evaporation source battle array
In row, each evaporation source all only places a kind of evaporation material；Described evaporation material includes cathode material, anode material, electron injection
Layer material, electron transport layer materials, hole injection layer material, hole transport layer material, emitting layer material.
7. the preparation facilitiess according to a kind of arbitrary described High-precision O LED component of claim 1,2,3,6 it is characterised in that：Institute
State a diameter of 1 μm ~ 200 μm of the evaporator head of evaporation source, evaporator head spacing is 5 μm ~ 400 μm.
8. a kind of High-precision O LED component according to claim 7 preparation facilitiess it is characterised in that：In described evaporation source
The evaporation material placed evaporates vertically upward；Described mask plate is placed in front of substrate, and mask plate is 0 ~ 500 μ with the distance of substrate
M, the distance of evaporator head to substrate is 10 μm ~ 10cm.
9. a kind of High-precision O LED component preparation method based on claim 1 device it is characterised in that：Comprise the steps,
S1, process substrate：After base-plate cleaning, dry or dry up；
S2, each functional layer of evaporation：Substrate after step S1 is processed is placed in vacuum intracavity, makes the material in evaporation source by heating
Material is evaporated vertically upward by thermosetting molecular flow, and drives the movement of substrate or evaporation source array by actuating device, complete successively
Become the evaporation of each functional layer, thus forming OLED.
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| CN108277460A (en) * | 2018-01-22 | 2018-07-13 | 昆山国显光电有限公司 | Evaporation coating device |
| CN109554665A (en) * | 2019-01-22 | 2019-04-02 | 京东方科技集团股份有限公司 | A kind of evaporation coating method, vapor deposition exposure mask mould group, display panel and display device |
| CN109638039A (en) * | 2018-11-26 | 2019-04-16 | 武汉华星光电半导体显示技术有限公司 | A kind of organic electroluminescence device and preparation method thereof, display device |
| CN111235540A (en) * | 2020-03-18 | 2020-06-05 | 杭州朗旭新材料科技有限公司 | Magnetron sputtering equipment and magnetron sputtering method |
| US10789884B2 (en) | 2018-11-26 | 2020-09-29 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Electrogenerated organic light-emitting diode device, manufacturing method, and display device thereof |
| CN111850477A (en) * | 2019-04-30 | 2020-10-30 | 北京铂阳顶荣光伏科技有限公司 | Device and method for uniformly coating film |
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