CN101840918A - 一种二极管触发的可控硅整流式静电释放保护电路结构 - Google Patents
一种二极管触发的可控硅整流式静电释放保护电路结构 Download PDFInfo
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- CN101840918A CN101840918A CN 201019087047 CN201019087047A CN101840918A CN 101840918 A CN101840918 A CN 101840918A CN 201019087047 CN201019087047 CN 201019087047 CN 201019087047 A CN201019087047 A CN 201019087047A CN 101840918 A CN101840918 A CN 101840918A
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- 230000001681 protective effect Effects 0.000 title claims abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 20
- 239000010703 silicon Substances 0.000 title claims abstract description 20
- 230000001960 triggered effect Effects 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 6
- 229910052681 coesite Inorganic materials 0.000 claims 3
- 229910052906 cristobalite Inorganic materials 0.000 claims 3
- 239000000377 silicon dioxide Substances 0.000 claims 3
- 235000012239 silicon dioxide Nutrition 0.000 claims 3
- 229910052682 stishovite Inorganic materials 0.000 claims 3
- 229910052905 tridymite Inorganic materials 0.000 claims 3
- 230000015556 catabolic process Effects 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 6
- 230000003071 parasitic effect Effects 0.000 description 18
- 238000005516 engineering process Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000003068 static effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000009024 positive feedback mechanism Effects 0.000 description 3
- 230000006378 damage Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
Abstract
Description
Claims (7)
Priority Applications (1)
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CN 201019087047 CN101840918B (zh) | 2010-04-14 | 2010-04-14 | 一种二极管触发的可控硅整流式静电释放保护电路结构 |
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CN 201019087047 CN101840918B (zh) | 2010-04-14 | 2010-04-14 | 一种二极管触发的可控硅整流式静电释放保护电路结构 |
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CN101840918A true CN101840918A (zh) | 2010-09-22 |
CN101840918B CN101840918B (zh) | 2011-12-21 |
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CN 201019087047 Expired - Fee Related CN101840918B (zh) | 2010-04-14 | 2010-04-14 | 一种二极管触发的可控硅整流式静电释放保护电路结构 |
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102201404A (zh) * | 2011-05-16 | 2011-09-28 | 中国科学院上海微系统与信息技术研究所 | 一种基于soi的esd保护器件及其制作方法 |
CN102543999A (zh) * | 2012-02-28 | 2012-07-04 | 中国科学院微电子研究所 | 一种提高维持电压的方法 |
CN103972233A (zh) * | 2014-05-30 | 2014-08-06 | 电子科技大学 | 一种具有抗闩锁能力的可关断scr器件 |
CN104269401A (zh) * | 2014-08-30 | 2015-01-07 | 电子科技大学 | 一种基于scr结构的新型esd保护器件 |
CN105374817A (zh) * | 2015-12-23 | 2016-03-02 | 电子科技大学 | 一种基于锗硅异质结工艺的scr器件 |
CN107123640A (zh) * | 2017-03-31 | 2017-09-01 | 深圳市环宇鼎鑫科技有限公司 | 半导体器件、电路组件及集成电路 |
CN108321154A (zh) * | 2017-12-15 | 2018-07-24 | 西安科技大学 | 基于scr管的tsv转接板及其制备方法 |
CN105552074B (zh) * | 2015-12-23 | 2018-12-18 | 电子科技大学 | 一种基于锗硅异质结工艺的scr器件 |
CN111180441A (zh) * | 2015-07-15 | 2020-05-19 | 英飞凌科技奥地利有限公司 | 包括钳位结构的半导体器件 |
CN114512477A (zh) * | 2022-02-17 | 2022-05-17 | 无锡市晶源微电子有限公司 | 击穿电压可调节的scr型esd保护结构 |
CN114783995A (zh) * | 2022-04-21 | 2022-07-22 | 电子科技大学 | 一种用于esd保护的高维持电压环流scr结构 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09293881A (ja) * | 1996-04-23 | 1997-11-11 | Kaho Denshi Kofun Yugenkoshi | 静電気放電保護回路の製造方法 |
CN101288177A (zh) * | 2005-10-11 | 2008-10-15 | 德州仪器公司 | 带有触发元件的低电容硅控整流器 |
CN101587894A (zh) * | 2008-05-16 | 2009-11-25 | 万国半导体股份有限公司 | 应用高电压轻掺杂漏极的互补金属氧化物半导体技术的静电释放保护 |
-
2010
- 2010-04-14 CN CN 201019087047 patent/CN101840918B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09293881A (ja) * | 1996-04-23 | 1997-11-11 | Kaho Denshi Kofun Yugenkoshi | 静電気放電保護回路の製造方法 |
CN101288177A (zh) * | 2005-10-11 | 2008-10-15 | 德州仪器公司 | 带有触发元件的低电容硅控整流器 |
CN101587894A (zh) * | 2008-05-16 | 2009-11-25 | 万国半导体股份有限公司 | 应用高电压轻掺杂漏极的互补金属氧化物半导体技术的静电释放保护 |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102201404A (zh) * | 2011-05-16 | 2011-09-28 | 中国科学院上海微系统与信息技术研究所 | 一种基于soi的esd保护器件及其制作方法 |
CN102543999A (zh) * | 2012-02-28 | 2012-07-04 | 中国科学院微电子研究所 | 一种提高维持电压的方法 |
CN102543999B (zh) * | 2012-02-28 | 2014-12-03 | 中国科学院微电子研究所 | 一种提高维持电压的方法 |
CN103972233A (zh) * | 2014-05-30 | 2014-08-06 | 电子科技大学 | 一种具有抗闩锁能力的可关断scr器件 |
CN103972233B (zh) * | 2014-05-30 | 2016-11-02 | 电子科技大学 | 一种具有抗闩锁能力的可关断scr器件 |
CN104269401A (zh) * | 2014-08-30 | 2015-01-07 | 电子科技大学 | 一种基于scr结构的新型esd保护器件 |
CN104269401B (zh) * | 2014-08-30 | 2017-03-29 | 电子科技大学 | 一种基于scr结构的新型esd保护器件 |
CN111180441A (zh) * | 2015-07-15 | 2020-05-19 | 英飞凌科技奥地利有限公司 | 包括钳位结构的半导体器件 |
CN111180441B (zh) * | 2015-07-15 | 2023-06-27 | 英飞凌科技奥地利有限公司 | 包括钳位结构的半导体器件 |
CN105374817A (zh) * | 2015-12-23 | 2016-03-02 | 电子科技大学 | 一种基于锗硅异质结工艺的scr器件 |
CN105552074B (zh) * | 2015-12-23 | 2018-12-18 | 电子科技大学 | 一种基于锗硅异质结工艺的scr器件 |
CN105374817B (zh) * | 2015-12-23 | 2018-12-18 | 电子科技大学 | 一种基于锗硅异质结工艺的scr器件 |
CN107123640A (zh) * | 2017-03-31 | 2017-09-01 | 深圳市环宇鼎鑫科技有限公司 | 半导体器件、电路组件及集成电路 |
CN107123640B (zh) * | 2017-03-31 | 2019-07-09 | 深圳市环宇鼎鑫科技有限公司 | 半导体器件、电路组件及集成电路 |
CN108321154A (zh) * | 2017-12-15 | 2018-07-24 | 西安科技大学 | 基于scr管的tsv转接板及其制备方法 |
CN114512477A (zh) * | 2022-02-17 | 2022-05-17 | 无锡市晶源微电子有限公司 | 击穿电压可调节的scr型esd保护结构 |
CN114512477B (zh) * | 2022-02-17 | 2023-09-08 | 无锡市晶源微电子股份有限公司 | 击穿电压可调节的scr型esd保护结构 |
CN114783995A (zh) * | 2022-04-21 | 2022-07-22 | 电子科技大学 | 一种用于esd保护的高维持电压环流scr结构 |
CN114783995B (zh) * | 2022-04-21 | 2023-04-25 | 电子科技大学 | 一种用于esd保护的高维持电压环流scr结构 |
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CN101840918B (zh) | 2011-12-21 |
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Application publication date: 20100922 Assignee: Wuxi Chipown Microelectronics Co., Ltd. Assignor: University of Electronic Science and Technology of China Contract record no.: 2012320010160 Denomination of invention: Silicon controlled rectifier electro-static discharge protective circuit structure triggered by diode Granted publication date: 20111221 License type: Exclusive License Record date: 20120726 |
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Granted publication date: 20111221 Termination date: 20150414 |
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