CN101820012B - Silicon solar cell with surface assembled with carbon nano tube - Google Patents
Silicon solar cell with surface assembled with carbon nano tube Download PDFInfo
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- CN101820012B CN101820012B CN 201010142105 CN201010142105A CN101820012B CN 101820012 B CN101820012 B CN 101820012B CN 201010142105 CN201010142105 CN 201010142105 CN 201010142105 A CN201010142105 A CN 201010142105A CN 101820012 B CN101820012 B CN 101820012B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention relates to a silicon solar cell with a surface assembled with a carbon nano tube, belonging to the technical field of solar cells. The silicon solar cell comprises a back electrode, a P type silicon substrate, an N type layer, an antireflection layer and a front electrode which are sequentially connected layer by layer from top to bottom, wherein a carbon nano tube coating is arranged between the N type layer and the antireflection layer and comprises one or a combination of a single-walled carbon nano tube and a double-walled carbon nano tube or a multi-walled carbon nano tube. The invention assembles the carbon nano tube to the surface of a substrate of the silicon solar cell, enhances the absorption of the cell on sunlight by utilizing the unique photoelectric property of a carbon nano tube structure and further enhances the photoelectric conversion efficiency of the solar cell by 1-5 percent compared with the photoelectric conversion efficiency of the traditional solar cell.
Description
Technical field
What the present invention relates to is a kind of product of technical field of solar batteries, specifically is the silicon solar cell that a kind of surface-assembled has CNT.
Background technology
Photovoltaic cell is considered to can energy shortage and serious and the alternative energy source of problem such as environmental pollution.In the present photovoltaic cell product, silicon solar cell is a major technique, accounts for the staple market share.How further improving conversion efficiency is the key factor in the silicon solar cell research.Matte making in recent years, antireflective film design aspect significant progress make the conversion efficiency of silicon solar cell obtain effective raising.Still there is a big difference but with the higher limit of theoretical light photoelectric transformation efficiency.Therefore, designing new and effective silicon solar cell has great importance.
Literature search through to prior art is found; Shu Qinke is at " Nano Lett. " (nanometer wall bulletin); Vol.9; Pp.4338-4342,2009) " the Hybrid Heterojunction and Photoelectrochemistry SolarCell Based on Silicon Nanowires and Double-Walled Carbon Nanotubes (based on the solar cell of silicon nanowires and double-walled carbon nano-tube heterojunction and Optical Electro-Chemistry) " that delivers on proposes double-walled carbon nano-tube and silicon nanowires and can form heterojunction and construct solar cell; This double-walled carbon nano-tube structure helps separation of charge, extracts electronics and hole.Receive the restriction of silicon nanowire structure, the conversion efficiency of the solar cell of this heterostructure is also lower, is merely about 1%.For this reason, if CNT directly is assembled into traditional silicon p-n junction semiconductor substrate surface, be expected to increase substantially the conversion efficiency of silicon solar cell.
Summary of the invention
The present invention is directed to the above-mentioned deficiency that prior art exists; Provide a kind of surface-assembled that the silicon solar cell of CNT is arranged; Broken through present silicon solar cell structural design notion; CNT is assembled in the surface of the sensitive surface of the silicon solar cell substrate of making PN junction, structurally utilizes the unique photoelectric properties of carbon nano tube structure, improve the photoelectric conversion efficiency of solar cell.
The present invention realizes through following technical scheme, the present invention includes the back electrode, P type silicon substrate, N type layer, antireflection layer and the preceding electrode that from bottom to top successively connect successively, wherein: be provided with carbon nanotube coating between described N type layer and the antireflection layer.
Contain a kind of or its combination in SWCN, double-walled carbon nano-tube or the multi-walled carbon nano-tubes in the described carbon nanotube coating.
The distribution density of described CNT between N type layer and antireflection layer is 5/square micron to 100 piece/square micron.
Described back electrode is the aluminium electrode;
Electrode is silver-colored gate electrode before described;
Described antireflection layer is silicon nitride or silica.
The invention has the beneficial effects as follows: the present invention has broken through present silicon solar cell structural design notion; CNT is assembled into the silicon solar cell substrate surface; Utilize the unique photoelectric properties of carbon nano tube structure; Improve the absorption of battery to sunlight, further improve the photoelectric conversion efficiency of battery, the method is suitable for various silicon solar cells.
Description of drawings
Fig. 1 is a structural representation of the present invention.
The schematic surface that is assembled with CNT that Fig. 2 obtains for embodiment 1.
The schematic surface that is assembled with CNT that Fig. 3 obtains for embodiment 2.
Embodiment
Elaborate in the face of embodiments of the invention down, present embodiment provided detailed execution mode and concrete operating process, but protection scope of the present invention is not limited to following embodiment being to implement under the prerequisite with technical scheme of the present invention.
Embodiment 1
As shown in Figure 1, present embodiment comprises: the back electrode 1, P type silicon substrate 2, N type layer 3, antireflection layer 5 and the preceding electrode 6 that from bottom to top successively connect successively, wherein: be provided with carbon nanotube coating 4 between described N type layer 3 and the antireflection layer 5.
Contain a kind of or its combination in SWCN, double-walled carbon nano-tube or the multi-walled carbon nano-tubes in the described carbon nanotube coating 4.
The distribution density of described CNT between N type layer 3 and antireflection layer 5 is 5/square micron to 100 piece/square micron.
Described back electrode 1 is the aluminium electrode, adopts method for printing screen to form;
Electrode 6 is silver-colored gate electrodes before described, adopts method for printing screen to form;
Described antireflection layer 5 is silicon nitride or silica, adopts PECVD method deposition to form, and its thickness is 70 nanometers.
Described N type layer 3 forms through high temperature ion (like phosphorus) diffusion technology.
Described carbon nanotube coating 4 is the method formation through self assembly.
Through above-mentioned steps, what obtain is assembled with the surperficial as shown in Figure 2 of SWCN at single crystal silicon solar cell substrate light receiving surface.
Change the single crystal silicon solar cell among the embodiment 1 into polycrystalline silicon solar cell, the SWCN surface that obtains is as shown in Figure 3.
The foregoing description improves 1-5% than the photoelectric conversion efficiency of traditional solar cell.
Claims (6)
1. a surface-assembled has the silicon solar cell of CNT, comprises the back electrode, P type silicon substrate, N type layer, antireflection layer and the preceding electrode that from bottom to top successively connect successively, it is characterized in that: be provided with carbon nanotube coating between N type layer and the antireflection layer;
Contain a kind of or its combination in SWCN, double-walled carbon nano-tube or the multi-walled carbon nano-tubes in the described carbon nanotube coating;
The distribution density of described CNT between N type layer and antireflection layer is 5-100 root/square micron.
2. surface-assembled according to claim 1 has the silicon solar cell of CNT, it is characterized in that, described back electrode is the aluminium electrode.
3. surface-assembled according to claim 1 has the silicon solar cell of CNT, it is characterized in that, described preceding electrode is silver-colored gate electrode.
4. surface-assembled according to claim 1 has the silicon solar cell of CNT, it is characterized in that, described antireflection layer is silicon nitride or silica, and its thickness is 70 nanometers.
5. surface-assembled according to claim 1 has the silicon solar cell of CNT, it is characterized in that, described carbon nanotube coating is the method formation through self assembly.
6. surface-assembled according to claim 1 has the silicon solar cell of CNT, it is characterized in that, described silicon solar cell is single crystal silicon solar cell or polycrystalline silicon solar cell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN 201010142105 CN101820012B (en) | 2010-04-09 | 2010-04-09 | Silicon solar cell with surface assembled with carbon nano tube |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201010142105 CN101820012B (en) | 2010-04-09 | 2010-04-09 | Silicon solar cell with surface assembled with carbon nano tube |
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| CN101820012A CN101820012A (en) | 2010-09-01 |
| CN101820012B true CN101820012B (en) | 2012-01-04 |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102290496A (en) * | 2011-09-23 | 2011-12-21 | 中国科学院微电子研究所 | Preparation method for heterojunction black silicon solar cell |
| CN103296127B (en) * | 2012-02-27 | 2016-01-06 | 浙江启鑫新能源科技股份有限公司 | The preparation method of rare earth modified carbon nanotube silicon solar cell |
| CN104269447B (en) * | 2014-09-19 | 2016-06-22 | 无锡赛晶太阳能有限公司 | A kind of polysilicon solar cell plate |
| CN104836525A (en) * | 2014-12-13 | 2015-08-12 | 襄阳精圣科技信息咨询有限公司 | Solar cell |
| CN108281498A (en) * | 2018-01-18 | 2018-07-13 | 黄淮学院 | A kind of novel photovoltaic battery and its manufacturing method |
| CN113300665B (en) * | 2021-05-24 | 2022-04-15 | 安徽大学 | Photon-enhanced flexible photo-thermal electric material and preparation and application thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1996620A (en) * | 2006-12-29 | 2007-07-11 | 清华大学 | Carbon nano tube film-based solar energy battery and its preparing method |
| CN101552296A (en) * | 2008-04-03 | 2009-10-07 | 清华大学 | Solar cell |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1996620A (en) * | 2006-12-29 | 2007-07-11 | 清华大学 | Carbon nano tube film-based solar energy battery and its preparing method |
| CN101552296A (en) * | 2008-04-03 | 2009-10-07 | 清华大学 | Solar cell |
Non-Patent Citations (1)
| Title |
|---|
| qinke shu et al.Hybrid Heterojunction and Photoelectrochemistry Solar Cell Based on Silicon Nanowires and Double-Walled Carbon Nanotubes.《NANO LETTERS》.2009,第9卷(第12期),4338-4342. * |
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