CN108281498A - A kind of novel photovoltaic battery and its manufacturing method - Google Patents
A kind of novel photovoltaic battery and its manufacturing method Download PDFInfo
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- CN108281498A CN108281498A CN201810047476.9A CN201810047476A CN108281498A CN 108281498 A CN108281498 A CN 108281498A CN 201810047476 A CN201810047476 A CN 201810047476A CN 108281498 A CN108281498 A CN 108281498A
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- carbon nanotube
- photovoltaic battery
- novel photovoltaic
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 26
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 18
- 238000000926 separation method Methods 0.000 claims abstract description 15
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 11
- 239000010439 graphite Substances 0.000 claims abstract description 11
- 239000011261 inert gas Substances 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052727 yttrium Inorganic materials 0.000 claims description 6
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 6
- 239000002109 single walled nanotube Substances 0.000 claims description 5
- 239000005083 Zinc sulfide Substances 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 239000002073 nanorod Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- GKCNVZWZCYIBPR-UHFFFAOYSA-N sulfanylideneindium Chemical compound [In]=S GKCNVZWZCYIBPR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- 238000002360 preparation method Methods 0.000 abstract description 3
- 241000167857 Bourreria Species 0.000 abstract description 2
- 238000005286 illumination Methods 0.000 abstract description 2
- 238000002310 reflectometry Methods 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of novel photovoltaic battery of technical field of solar and its manufacturing methods, including：Carbon nanotube layer is deposited on the top of monocrystalline substrate；Silica separation layer, thermal oxide growth is on the surface of carbon nanotube layer；Electrode column is symmetrically welded at the left and right ends of silica separation layer；Back electrode, it is coated on the bottom of monocrystalline substrate, the use that the present invention passes through carbon nanotube, strong back surface field and high conductivity are provided for photovoltaic cell, increases the contact area of graphite and silicon, is conducive to the efficiency for improving photovoltaic cell, the reflectivity of illumination can be made to be greatly lowered, its preparation process is simple, and manufacturing cost is low, is suitble to promote the use of on a large scale.
Description
Technical field
The invention discloses a kind of novel photovoltaic battery and its manufacturing methods, specially technical field of solar.
Background technology
For the luminous energy of the sun to be converted into electric energy.Ground photovoltaic system is largely used using silicon as substrate at present
Silicon solar cell, monocrystalline silicon, polysilicon, non-crystal silicon solar cell can be divided into.In energy conversion efficiency and service life
Etc. in terms of comprehensive performances, monocrystalline silicon and polycrystal silicon cell are better than amorphous silicon battery.Polysilicon is lower than monocrystalline silicon transfer efficiency, but valence
Lattice are less expensive.Common, aluminium is printed in the form of comprising alumina particles in the rear surface of solar cell, and is moved back at high temperature
Fire.The aluminum slurry for being available for these purposes includes the alumina particles of various diameters, these alumina particles be substantially polydispersion with
It realizes high packaging density and therefore realizes more preferably lateral conductivity.But the conducting wire performance of this form is bad, heat passes
It leads less efficient.For this purpose, we have proposed a kind of novel photovoltaic batteries and its manufacturing method to come into operation, to solve above-mentioned ask
Topic.
Invention content
The purpose of the present invention is to provide a kind of novel photovoltaic battery and its manufacturing methods, to solve in above-mentioned background technology
The problem of proposition.
To achieve the above object, the present invention provides the following technical solutions：A kind of novel photovoltaic battery, including：
Carbon nanotube layer is deposited on the top of monocrystalline substrate；
Silica separation layer, thermal oxide growth is on the surface of carbon nanotube layer；
Electrode column is symmetrically welded at the left and right ends of silica separation layer；
Back electrode is coated on the bottom of monocrystalline substrate.
Preferably, the coated with uniform of the monocrystalline substrate has an including transparent conducting oxide layer, and monocrystalline substrate
Thickness is 5~20 μm.
Preferably, the inner cavity of the carbon nanotube layer is evenly distributed a carbon nanotube, and the thickness of carbon nanotube layer be 3~
10μm。
Preferably, a kind of manufacturing method of novel photovoltaic battery, this method are as follows：
S1：Anode diameter 8mm, the graphite rod of cathode diameter 14mm is taken to drill in graphite-rod anode end, gold is filled in hole
Belong to mixture and powdered graphite, after vacuumizing, be passed through inert gas, power on, single is made after the 4~6min that discharges
Pipe；
S2：Single-walled carbon nanotube is splashed in monocrystalline substrate, carbon nanotube layer is formed；
S3：Wet etching monocrystalline substrate back oxide layer, is used as the back of the body in its oxide layer by electron beam evaporation metal
Electrode；
S4：By thermal oxide growth silica on carbon nanotube layer, as silica separation layer；
S5：Padded coaming is deposited on zinc oxide nano rod, and is welded on the left and right ends of silica separation layer, is made
Formation electrode column.
Preferably, in the step S1, metal mixture is the mixture of metallic nickel and metallic yttrium, wherein metallic nickel：Gold
Belong to yttrium=1.6:0.6.
Preferably, in the step S1, inert gas is one kind in helium, argon gas, nitrogen and hydrogen.
Preferably, in the step S1, when being passed through inert gas, gas pressure is not less than 14000Pa.
Preferably, in the step S1, after powering on, current control keeps graphite rod the two poles of the earth in 90~100A
Voltage is 30V.
Preferably, in the step S5, padded coaming is one kind in titanium dioxide, indium sulfide and zinc sulphide.
Compared with prior art, the beneficial effects of the invention are as follows：The present invention is photovoltaic cell by the use of carbon nanotube
Strong back surface field and high conductivity are provided, the contact area of graphite and silicon is increased, is conducive to the effect for improving photovoltaic cell
Rate can be such that the reflectivity of illumination is greatly lowered, and preparation process is simple, and manufacturing cost is low, and being suitble to promote on a large scale makes
With.
Description of the drawings
Fig. 1 is schematic structural view of the invention.
In figure：1 monocrystalline substrate, 2 carbon nanotube layers, 3 silica separation layers, 4 back electrodes, 5 electrode columns.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Referring to Fig. 1, the present invention provides a kind of technical solution：A kind of novel photovoltaic battery, including：
Carbon nanotube layer 2 is deposited on the top of monocrystalline substrate 1；
Silica separation layer 3, thermal oxide growth is on the surface of carbon nanotube layer 2；
Electrode column 5 is symmetrically welded at the left and right ends of silica separation layer 3；
Back electrode 4 is coated on the bottom of monocrystalline substrate 1.
Wherein, the coated with uniform of the monocrystalline substrate 1 has an including transparent conducting oxide layer, and monocrystalline substrate 1
Thickness is 5~20 μm, and the inner cavity of the carbon nanotube layer 2 is evenly distributed carbon nanotube, and the thickness of carbon nanotube layer 2 is 3
~10 μm.
The present invention also provides a kind of manufacturing method of novel photovoltaic battery, this method is as follows：
S1：Anode diameter 8mm, the graphite rod of cathode diameter 14mm is taken to drill in graphite-rod anode end, gold is filled in hole
Belong to mixture and powdered graphite, metal mixture is the mixture of metallic nickel and metallic yttrium, wherein metallic nickel：Metallic yttrium=1.6:
0.6, after vacuumizing, it is passed through inert gas, inert gas is one kind in helium, argon gas, nitrogen and hydrogen, is being passed through indifferent gas
When body, gas pressure is not less than 14000Pa, powers on, after powering on, current control keeps graphite in 90~100A
The voltage at stick the two poles of the earth is 30V, and single-walled carbon nanotube is made after the 4~6min that discharges；
S2：Single-walled carbon nanotube is splashed in monocrystalline substrate 1, carbon nanotube layer 2 is formed；
S3：1 back oxide layer of wet etching monocrystalline substrate, is used as the back of the body in its oxide layer by electron beam evaporation metal
Electrode 4；
S4：By thermal oxide growth silica on carbon nanotube layer 2, as silica separation layer 3；
S5：Padded coaming is deposited on zinc oxide nano rod, padded coaming is in titanium dioxide, indium sulfide and zinc sulphide
One kind, and be welded on the left and right ends of silica separation layer 3, be allowed to form electrode column 5.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
Understanding without departing from the principles and spirit of the present invention can carry out these embodiments a variety of variations, modification, replace
And modification, the scope of the present invention is defined by the appended.
Claims (9)
1. a kind of novel photovoltaic battery, it is characterised in that：Including：
Carbon nanotube layer (2), is deposited on the top of monocrystalline substrate (1)；
Silica separation layer (3), surface of the thermal oxide growth in carbon nanotube layer (2)；
Electrode column (5), is symmetrically welded at the left and right ends of silica separation layer (3)；
Back electrode (4), is coated on the bottom of monocrystalline substrate (1).
2. a kind of novel photovoltaic battery according to claim 1, it is characterised in that：The surface of the monocrystalline substrate (1)
It is uniformly coated with including transparent conducting oxide layer, and the thickness of monocrystalline substrate (1) is 5~20 μm.
3. a kind of novel photovoltaic battery according to claim 1, it is characterised in that：The inner cavity of the carbon nanotube layer (2)
It is evenly distributed to have carbon nanotube, and the thickness of carbon nanotube layer (2) is 3~10 μm.
4. a kind of manufacturing method of novel photovoltaic battery, it is characterised in that：This method is as follows：
S1：Anode diameter 8mm, the graphite rod of cathode diameter 14mm is taken to drill in graphite-rod anode end, filling metal is mixed in hole
Object and powdered graphite are closed, after vacuumizing, inert gas is passed through, powers on, single-walled carbon nanotube is made after the 4~6min that discharges；
S2：Single-walled carbon nanotube is splashed in monocrystalline substrate (1), carbon nanotube layer (2) is formed；
S3：Wet etching monocrystalline substrate (1) back oxide layer is used as back of the body electricity in its oxide layer by electron beam evaporation metal
Pole (4)；
S4：By thermal oxide growth silica on carbon nanotube layer (2), as silica separation layer (3)；
S5：Padded coaming is deposited on zinc oxide nano rod, and is welded on the left and right ends of silica separation layer (3), is made
Formation electrode column (5).
5. a kind of manufacturing method of novel photovoltaic battery according to claim 4, it is characterised in that：In the step S1,
Metal mixture is the mixture of metallic nickel and metallic yttrium, wherein metallic nickel：Metallic yttrium=1.6:0.6.
6. a kind of manufacturing method of novel photovoltaic battery according to claim 4, it is characterised in that：In the step S1,
Inert gas is one kind in helium, argon gas, nitrogen and hydrogen.
7. a kind of manufacturing method of novel photovoltaic battery according to claim 4, it is characterised in that：In the step S1,
When being passed through inert gas, gas pressure is not less than 14000Pa.
8. a kind of manufacturing method of novel photovoltaic battery according to claim 4, it is characterised in that：In the step S1,
After powering on, current control is in 90~100A, and it is 30V to keep the voltage at graphite rod the two poles of the earth.
9. a kind of manufacturing method of novel photovoltaic battery according to claim 4, it is characterised in that：In the step S5,
Padded coaming is one kind in titanium dioxide, indium sulfide and zinc sulphide.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110636124.9A CN113257929A (en) | 2018-01-18 | 2018-01-18 | Novel photovoltaic cell |
| CN201810047476.9A CN108281498A (en) | 2018-01-18 | 2018-01-18 | A kind of novel photovoltaic battery and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201810047476.9A CN108281498A (en) | 2018-01-18 | 2018-01-18 | A kind of novel photovoltaic battery and its manufacturing method |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101820012A (en) * | 2010-04-09 | 2010-09-01 | 上海交通大学 | Silicon solar cell with surface assembled with carbon nano tube |
| KR20120058088A (en) * | 2010-11-29 | 2012-06-07 | 엘지전자 주식회사 | Solar cell and fabrication method thereof |
| CN103466593A (en) * | 2013-08-27 | 2013-12-25 | 西北工业大学 | Improved temperature control electric arc furnace and method for preparing semiconductor single wall carbon nano tubes |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101861654B (en) * | 2007-07-09 | 2012-08-15 | 塔林科技大学 | Photovoltaic cell based on zinc oxide nanorods and method for making the same |
| CN101552296B (en) * | 2008-04-03 | 2011-06-08 | 清华大学 | Solar cell |
| CN102290529B (en) * | 2010-06-18 | 2015-10-14 | 海洋王照明科技股份有限公司 | Individual layer organic solar batteries and preparation method thereof |
| US20130098440A1 (en) * | 2010-06-29 | 2013-04-25 | Yeda Research And Development Co. Ltd. | Photovoltaic cell and method of its manufacture |
| JP5585339B2 (en) * | 2010-07-30 | 2014-09-10 | ソニー株式会社 | Solid-state imaging device, driving method thereof, and electronic apparatus |
| CN104505369B (en) * | 2014-12-03 | 2017-12-15 | 上海蓝沛信泰光电科技有限公司 | Flexible TFT and its preparation technology for Flexible Displays back electrode |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101820012A (en) * | 2010-04-09 | 2010-09-01 | 上海交通大学 | Silicon solar cell with surface assembled with carbon nano tube |
| KR20120058088A (en) * | 2010-11-29 | 2012-06-07 | 엘지전자 주식회사 | Solar cell and fabrication method thereof |
| CN103466593A (en) * | 2013-08-27 | 2013-12-25 | 西北工业大学 | Improved temperature control electric arc furnace and method for preparing semiconductor single wall carbon nano tubes |
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Application publication date: 20180713 |
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