CN101816080B - 辐照发射装置及其制造方法 - Google Patents

辐照发射装置及其制造方法 Download PDF

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Publication number
CN101816080B
CN101816080B CN200880108606.XA CN200880108606A CN101816080B CN 101816080 B CN101816080 B CN 101816080B CN 200880108606 A CN200880108606 A CN 200880108606A CN 101816080 B CN101816080 B CN 101816080B
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CN
China
Prior art keywords
layer
emissive
charge
carriers
electrode
Prior art date
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Expired - Fee Related
Application number
CN200880108606.XA
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English (en)
Chinese (zh)
Other versions
CN101816080A (zh
Inventor
M·费勒
K·霍伊泽
E·霍夫林
T·施伦克
A·英格尔
M·波普
M·克莱因
N·里格尔
G·施米德
R·克劳斯
S·塞德尔
F·科兹劳斯基
A·孔策
G·吉雷斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Osram Oled GmbH
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Osram Opto Semiconductors GmbH
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Publication of CN101816080A publication Critical patent/CN101816080A/zh
Application granted granted Critical
Publication of CN101816080B publication Critical patent/CN101816080B/zh
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H10K50/131—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/165—Electron transporting layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/19—Tandem OLEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/10—Triplet emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/27—Combination of fluorescent and phosphorescent emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/80—Composition varying spatially, e.g. having a spatial gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/865—Intermediate layers comprising a mixture of materials of the adjoining active layers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
CN200880108606.XA 2007-09-25 2008-09-25 辐照发射装置及其制造方法 Expired - Fee Related CN101816080B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102007045753.9 2007-09-25
DE102007045753 2007-09-25
DE102007058005.5A DE102007058005B4 (de) 2007-09-25 2007-12-03 Strahlungsemittierende Vorrichtung und Verfahren zu deren Herstellung
DE102007058005.5 2007-12-03
PCT/EP2008/062864 WO2009040401A1 (de) 2007-09-25 2008-09-25 Strahlungsemittierende vorrichtung und verfahren zu dessen herstellung

Publications (2)

Publication Number Publication Date
CN101816080A CN101816080A (zh) 2010-08-25
CN101816080B true CN101816080B (zh) 2014-09-17

Family

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CN200880108606.XA Expired - Fee Related CN101816080B (zh) 2007-09-25 2008-09-25 辐照发射装置及其制造方法

Country Status (8)

Country Link
US (1) US8441004B2 (enExample)
EP (1) EP2193559B1 (enExample)
JP (1) JP2010541144A (enExample)
KR (1) KR101488847B1 (enExample)
CN (1) CN101816080B (enExample)
DE (1) DE102007058005B4 (enExample)
TW (1) TW200933949A (enExample)
WO (1) WO2009040401A1 (enExample)

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FR2958455B1 (fr) 2010-04-06 2015-06-26 Commissariat Energie Atomique Diode electroluminescente organique comportant au moins deux couches electroluminescentes.
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CN103887435A (zh) * 2012-12-21 2014-06-25 厦门天马微电子有限公司 一种有机发光二极管
CN103887436B (zh) * 2012-12-21 2016-12-28 厦门天马微电子有限公司 一种有机发光二极管
KR102086556B1 (ko) * 2013-08-02 2020-03-10 삼성디스플레이 주식회사 유기 발광 소자
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KR102165234B1 (ko) * 2014-04-25 2020-10-14 엘지디스플레이 주식회사 백색 유기 발광 소자
KR102294413B1 (ko) 2014-11-18 2021-08-27 삼성디스플레이 주식회사 유기발광 표시장치
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CN110416418B (zh) * 2018-04-28 2020-07-21 江苏三月科技股份有限公司 有机电致发光器件及包括其的显示器
US11903232B2 (en) 2019-03-07 2024-02-13 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device comprising charge-generation layer between light-emitting units
JP7450599B2 (ja) 2019-03-07 2024-03-15 株式会社半導体エネルギー研究所 発光デバイス
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Also Published As

Publication number Publication date
DE102007058005B4 (de) 2018-05-17
EP2193559A1 (de) 2010-06-09
EP2193559B1 (de) 2019-04-03
JP2010541144A (ja) 2010-12-24
KR101488847B1 (ko) 2015-02-11
US20100314648A1 (en) 2010-12-16
WO2009040401A1 (de) 2009-04-02
CN101816080A (zh) 2010-08-25
KR20100087120A (ko) 2010-08-03
DE102007058005A1 (de) 2009-04-02
US8441004B2 (en) 2013-05-14
TW200933949A (en) 2009-08-01

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