CN101809834B - 用于制造发射辐射的器件的方法以及发射辐射的器件 - Google Patents

用于制造发射辐射的器件的方法以及发射辐射的器件 Download PDF

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Publication number
CN101809834B
CN101809834B CN2008801085071A CN200880108507A CN101809834B CN 101809834 B CN101809834 B CN 101809834B CN 2008801085071 A CN2008801085071 A CN 2008801085071A CN 200880108507 A CN200880108507 A CN 200880108507A CN 101809834 B CN101809834 B CN 101809834B
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China
Prior art keywords
radiation
refractive index
spectrum
active area
field
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Expired - Fee Related
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CN2008801085071A
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English (en)
Chinese (zh)
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CN101809834A (zh
Inventor
P·布里克
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/20—Lasers with a special output beam profile or cross-section, e.g. non-Gaussian
    • H01S2301/206—Top hat profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0035—Simulations of laser characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Compositions Of Oxide Ceramics (AREA)
CN2008801085071A 2007-09-24 2008-08-18 用于制造发射辐射的器件的方法以及发射辐射的器件 Expired - Fee Related CN101809834B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102007045499.8 2007-09-24
DE102007045499 2007-09-24
DE102007051315.3 2007-10-26
DE102007051315.3A DE102007051315B4 (de) 2007-09-24 2007-10-26 Strahlungsemittierendes Bauelement
PCT/DE2008/001377 WO2009039808A2 (de) 2007-09-24 2008-08-18 Verfahren zur herstellung eines strahlungsemittierenden bauelements und strahlungsemittierendes bauelement

Publications (2)

Publication Number Publication Date
CN101809834A CN101809834A (zh) 2010-08-18
CN101809834B true CN101809834B (zh) 2013-04-10

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CN2008801085071A Expired - Fee Related CN101809834B (zh) 2007-09-24 2008-08-18 用于制造发射辐射的器件的方法以及发射辐射的器件

Country Status (8)

Country Link
US (1) US8576889B2 (https=)
EP (1) EP2191548B1 (https=)
JP (1) JP5306355B2 (https=)
KR (1) KR101431306B1 (https=)
CN (1) CN101809834B (https=)
DE (1) DE102007051315B4 (https=)
TW (1) TWI460947B (https=)
WO (1) WO2009039808A2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007061458A1 (de) 2007-11-30 2009-06-04 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines strahlungsemittierenden Bauelements und strahlungsemittierendes Bauelement
DE102009026530A1 (de) * 2009-05-28 2010-12-02 Robert Bosch Gmbh Lasereinrichtung
DE102009026526A1 (de) * 2009-05-28 2010-12-02 Robert Bosch Gmbh Lasereinrichtung
DE102009041934A1 (de) * 2009-09-17 2011-03-24 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser
CN103872579B (zh) * 2014-03-28 2016-08-24 江苏华芯半导体科技有限公司 改变半导体激光器件芯片慢轴方向光场分布的方法
CN104600562B (zh) * 2015-02-03 2017-08-29 中国电子科技集团公司第十三研究所 808nm平顶光场大功率激光器
US11025031B2 (en) * 2016-11-29 2021-06-01 Leonardo Electronics Us Inc. Dual junction fiber-coupled laser diode and related methods

Citations (4)

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US5073041A (en) * 1990-11-13 1991-12-17 Bell Communications Research, Inc. Integrated assembly comprising vertical cavity surface-emitting laser array with Fresnel microlenses
US5815521A (en) * 1996-02-16 1998-09-29 Lucent Technologies Inc. Semiconductor laser with low beam divergence
CN1434996A (zh) * 2000-06-08 2003-08-06 日亚化学工业株式会社 半导体激光元件及其制造方法
CN1528036A (zh) * 2001-02-16 2004-09-08 ����˹���ѧ���»� 包括多个光学有源区的半导体激光器

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JP2975473B2 (ja) 1992-03-06 1999-11-10 シャープ株式会社 半導体レーザ素子
US5974069A (en) * 1994-09-16 1999-10-26 Rohm Co., Ltd Semiconductor laser and manufacturing method thereof
JP3685925B2 (ja) 1998-05-11 2005-08-24 アンリツ株式会社 スーパールミネッセントダイオード
US6690700B2 (en) * 1998-10-16 2004-02-10 Agilent Technologies, Inc. Nitride semiconductor device
DE60043536D1 (de) * 1999-03-04 2010-01-28 Nichia Corp Nitridhalbleiterlaserelement
JP4749582B2 (ja) 2000-03-27 2011-08-17 忠 高野 半導体レーザ装置およびそれを用いた通信システム
DE10046580A1 (de) * 2000-09-20 2002-04-04 Osram Opto Semiconductors Gmbh Halbleiter-Laser
DE10057698A1 (de) 2000-11-21 2002-06-06 Osram Opto Semiconductors Gmbh Übereinander gestapelte Halbleiter-Diodenlaser
US6628694B2 (en) * 2001-04-23 2003-09-30 Agilent Technologies, Inc. Reliability-enhancing layers for vertical cavity surface emitting lasers
JP3797151B2 (ja) * 2001-07-05 2006-07-12 ソニー株式会社 レーザダイオード、光学ピックアップ装置、光ディスク装置および光通信装置
JP4038046B2 (ja) * 2001-12-18 2008-01-23 シャープ株式会社 半導体レーザ装置の製造方法
JP2005079580A (ja) * 2003-08-29 2005-03-24 Osram Opto Semiconductors Gmbh 複数の発光領域を有するレーザー装置
GB2406968B (en) * 2003-10-11 2006-12-06 Intense Photonics Ltd Control of output beam divergence in a semiconductor waveguide device
TWI290402B (en) * 2003-10-24 2007-11-21 Ind Tech Res Inst Edge-emitting laser with circular beam
JP4206086B2 (ja) * 2004-08-03 2009-01-07 住友電気工業株式会社 窒化物半導体発光素子および窒化物半導体発光素子を製造する方法
US20060054843A1 (en) * 2004-09-13 2006-03-16 Electronic Design To Market, Inc. Method and apparatus of improving optical reflection images of a laser on a changing surface location
DE102006010728A1 (de) * 2005-12-05 2007-06-06 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Laservorrichtung

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US5073041A (en) * 1990-11-13 1991-12-17 Bell Communications Research, Inc. Integrated assembly comprising vertical cavity surface-emitting laser array with Fresnel microlenses
US5815521A (en) * 1996-02-16 1998-09-29 Lucent Technologies Inc. Semiconductor laser with low beam divergence
CN1434996A (zh) * 2000-06-08 2003-08-06 日亚化学工业株式会社 半导体激光元件及其制造方法
CN1528036A (zh) * 2001-02-16 2004-09-08 ����˹���ѧ���»� 包括多个光学有源区的半导体激光器

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GUPTA.Section 7.2 Semiconductor Diode Lasers ED.《HANDBOOK OF PHOTONICS》.1997,292-298. *
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Shun Tung Yen ET Al.Theoretical Investigation on Semiconductor Lasers with Passive Waveguides.《IEEE JOURNAL OF QUANTUM ELECTRONICS 》.1996,第32卷(第1期),4-13. *
W.Freude ET AL.Refractive-index profile determination of single-mode-fibres by far-field power measurements at 1300 nm.《Electronics Letters》.1986,第18卷(第18期),945-947. *

Also Published As

Publication number Publication date
EP2191548A2 (de) 2010-06-02
JP2010541214A (ja) 2010-12-24
TW200917603A (en) 2009-04-16
KR20100072048A (ko) 2010-06-29
US8576889B2 (en) 2013-11-05
TWI460947B (zh) 2014-11-11
KR101431306B1 (ko) 2014-09-22
EP2191548B1 (de) 2015-09-30
WO2009039808A3 (de) 2009-10-15
WO2009039808A2 (de) 2009-04-02
DE102007051315A1 (de) 2009-04-02
US20100189153A1 (en) 2010-07-29
DE102007051315B4 (de) 2018-04-05
CN101809834A (zh) 2010-08-18
JP5306355B2 (ja) 2013-10-02

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