TWI460947B - 發光元件之製法及發光元件 - Google Patents
發光元件之製法及發光元件 Download PDFInfo
- Publication number
- TWI460947B TWI460947B TW097136257A TW97136257A TWI460947B TW I460947 B TWI460947 B TW I460947B TW 097136257 A TW097136257 A TW 097136257A TW 97136257 A TW97136257 A TW 97136257A TW I460947 B TWI460947 B TW I460947B
- Authority
- TW
- Taiwan
- Prior art keywords
- refractive index
- light
- emitting element
- field
- region
- Prior art date
Links
- 230000005855 radiation Effects 0.000 title claims description 64
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 134
- 238000009826 distribution Methods 0.000 claims description 48
- 239000000463 material Substances 0.000 claims description 45
- 230000007704 transition Effects 0.000 claims description 38
- 150000001875 compounds Chemical class 0.000 claims description 17
- 230000008859 change Effects 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 13
- 239000011800 void material Substances 0.000 claims description 13
- 238000005286 illumination Methods 0.000 claims description 11
- 238000004020 luminiscence type Methods 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 11
- 230000007423 decrease Effects 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- 230000009471 action Effects 0.000 claims description 5
- 239000000945 filler Substances 0.000 claims description 5
- 230000005672 electromagnetic field Effects 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 230000005670 electromagnetic radiation Effects 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 239000000126 substance Substances 0.000 description 6
- 230000009191 jumping Effects 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 230000001427 coherent effect Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000013139 quantization Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000003631 wet chemical etching Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- -1 tantalum nitride) Chemical class 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/20—Lasers with a special output beam profile or cross-section, e.g. non-Gaussian
- H01S2301/206—Top hat profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
- H01S5/0035—Simulations of laser characteristics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3095—Tunnel junction
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Compositions Of Oxide Ceramics (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007045499 | 2007-09-24 | ||
| DE102007051315.3A DE102007051315B4 (de) | 2007-09-24 | 2007-10-26 | Strahlungsemittierendes Bauelement |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200917603A TW200917603A (en) | 2009-04-16 |
| TWI460947B true TWI460947B (zh) | 2014-11-11 |
Family
ID=40384460
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097136257A TWI460947B (zh) | 2007-09-24 | 2008-09-22 | 發光元件之製法及發光元件 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8576889B2 (https=) |
| EP (1) | EP2191548B1 (https=) |
| JP (1) | JP5306355B2 (https=) |
| KR (1) | KR101431306B1 (https=) |
| CN (1) | CN101809834B (https=) |
| DE (1) | DE102007051315B4 (https=) |
| TW (1) | TWI460947B (https=) |
| WO (1) | WO2009039808A2 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007061458A1 (de) | 2007-11-30 | 2009-06-04 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines strahlungsemittierenden Bauelements und strahlungsemittierendes Bauelement |
| DE102009026530A1 (de) * | 2009-05-28 | 2010-12-02 | Robert Bosch Gmbh | Lasereinrichtung |
| DE102009026526A1 (de) * | 2009-05-28 | 2010-12-02 | Robert Bosch Gmbh | Lasereinrichtung |
| DE102009041934A1 (de) * | 2009-09-17 | 2011-03-24 | Osram Opto Semiconductors Gmbh | Kantenemittierender Halbleiterlaser |
| CN103872579B (zh) * | 2014-03-28 | 2016-08-24 | 江苏华芯半导体科技有限公司 | 改变半导体激光器件芯片慢轴方向光场分布的方法 |
| CN104600562B (zh) * | 2015-02-03 | 2017-08-29 | 中国电子科技集团公司第十三研究所 | 808nm平顶光场大功率激光器 |
| US11025031B2 (en) * | 2016-11-29 | 2021-06-01 | Leonardo Electronics Us Inc. | Dual junction fiber-coupled laser diode and related methods |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020154675A1 (en) * | 2001-04-23 | 2002-10-24 | Qing Deng | Reliability-enhancing layers for vertical cavity surface emitting lasers |
| TW200515664A (en) * | 2003-10-24 | 2005-05-01 | Ind Tech Res Inst | Edge-emitting laser with circular beam |
| US20060054843A1 (en) * | 2004-09-13 | 2006-03-16 | Electronic Design To Market, Inc. | Method and apparatus of improving optical reflection images of a laser on a changing surface location |
| TW200616259A (en) * | 2004-08-03 | 2006-05-16 | Sumitomo Electric Industries | Nitride semiconductor light emitting element, and method of manufacturing nitride semiconductor light emitting element |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5073041A (en) * | 1990-11-13 | 1991-12-17 | Bell Communications Research, Inc. | Integrated assembly comprising vertical cavity surface-emitting laser array with Fresnel microlenses |
| JP2975473B2 (ja) | 1992-03-06 | 1999-11-10 | シャープ株式会社 | 半導体レーザ素子 |
| US5974069A (en) * | 1994-09-16 | 1999-10-26 | Rohm Co., Ltd | Semiconductor laser and manufacturing method thereof |
| JPH09232692A (ja) * | 1996-02-16 | 1997-09-05 | Lucent Technol Inc | 半導体レーザ装置 |
| JP3685925B2 (ja) | 1998-05-11 | 2005-08-24 | アンリツ株式会社 | スーパールミネッセントダイオード |
| US6690700B2 (en) * | 1998-10-16 | 2004-02-10 | Agilent Technologies, Inc. | Nitride semiconductor device |
| DE60043536D1 (de) * | 1999-03-04 | 2010-01-28 | Nichia Corp | Nitridhalbleiterlaserelement |
| JP4749582B2 (ja) | 2000-03-27 | 2011-08-17 | 忠 高野 | 半導体レーザ装置およびそれを用いた通信システム |
| CA2411445C (en) * | 2000-06-08 | 2011-08-16 | Nichia Corporation | Semiconductor laser device, and method of manufacturing the same |
| DE10046580A1 (de) * | 2000-09-20 | 2002-04-04 | Osram Opto Semiconductors Gmbh | Halbleiter-Laser |
| DE10057698A1 (de) | 2000-11-21 | 2002-06-06 | Osram Opto Semiconductors Gmbh | Übereinander gestapelte Halbleiter-Diodenlaser |
| GB0103838D0 (en) * | 2001-02-16 | 2001-04-04 | Univ Glasgow | Improvements in or relating to semiconductor lasers |
| JP3797151B2 (ja) * | 2001-07-05 | 2006-07-12 | ソニー株式会社 | レーザダイオード、光学ピックアップ装置、光ディスク装置および光通信装置 |
| JP4038046B2 (ja) * | 2001-12-18 | 2008-01-23 | シャープ株式会社 | 半導体レーザ装置の製造方法 |
| JP2005079580A (ja) * | 2003-08-29 | 2005-03-24 | Osram Opto Semiconductors Gmbh | 複数の発光領域を有するレーザー装置 |
| GB2406968B (en) * | 2003-10-11 | 2006-12-06 | Intense Photonics Ltd | Control of output beam divergence in a semiconductor waveguide device |
| DE102006010728A1 (de) * | 2005-12-05 | 2007-06-06 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement und Laservorrichtung |
-
2007
- 2007-10-26 DE DE102007051315.3A patent/DE102007051315B4/de not_active Expired - Fee Related
-
2008
- 2008-08-18 EP EP08801200.0A patent/EP2191548B1/de not_active Not-in-force
- 2008-08-18 JP JP2010526145A patent/JP5306355B2/ja not_active Expired - Fee Related
- 2008-08-18 US US12/670,984 patent/US8576889B2/en not_active Expired - Fee Related
- 2008-08-18 CN CN2008801085071A patent/CN101809834B/zh not_active Expired - Fee Related
- 2008-08-18 KR KR1020107008961A patent/KR101431306B1/ko not_active Expired - Fee Related
- 2008-08-18 WO PCT/DE2008/001377 patent/WO2009039808A2/de not_active Ceased
- 2008-09-22 TW TW097136257A patent/TWI460947B/zh not_active IP Right Cessation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020154675A1 (en) * | 2001-04-23 | 2002-10-24 | Qing Deng | Reliability-enhancing layers for vertical cavity surface emitting lasers |
| TW517416B (en) * | 2001-04-23 | 2003-01-11 | Agilent Technologies Inc | Reliability-enhancing layers for vertical cavity surface emitting lasers |
| TW200515664A (en) * | 2003-10-24 | 2005-05-01 | Ind Tech Res Inst | Edge-emitting laser with circular beam |
| TW200616259A (en) * | 2004-08-03 | 2006-05-16 | Sumitomo Electric Industries | Nitride semiconductor light emitting element, and method of manufacturing nitride semiconductor light emitting element |
| US20060054843A1 (en) * | 2004-09-13 | 2006-03-16 | Electronic Design To Market, Inc. | Method and apparatus of improving optical reflection images of a laser on a changing surface location |
Non-Patent Citations (1)
| Title |
|---|
| 呂政學碩士論文，"論文名稱:氮化銦鎵/氮化鎵量子井雷射二極體之研製與分析"2006年7月 * |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2191548A2 (de) | 2010-06-02 |
| JP2010541214A (ja) | 2010-12-24 |
| TW200917603A (en) | 2009-04-16 |
| KR20100072048A (ko) | 2010-06-29 |
| US8576889B2 (en) | 2013-11-05 |
| KR101431306B1 (ko) | 2014-09-22 |
| EP2191548B1 (de) | 2015-09-30 |
| WO2009039808A3 (de) | 2009-10-15 |
| WO2009039808A2 (de) | 2009-04-02 |
| DE102007051315A1 (de) | 2009-04-02 |
| US20100189153A1 (en) | 2010-07-29 |
| DE102007051315B4 (de) | 2018-04-05 |
| CN101809834A (zh) | 2010-08-18 |
| CN101809834B (zh) | 2013-04-10 |
| JP5306355B2 (ja) | 2013-10-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |