CN101809752A - Photovoltaic cell front face substrate and use of a substrate for a photovoltaic cell front face - Google Patents
Photovoltaic cell front face substrate and use of a substrate for a photovoltaic cell front face Download PDFInfo
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- CN101809752A CN101809752A CN200880108903A CN200880108903A CN101809752A CN 101809752 A CN101809752 A CN 101809752A CN 200880108903 A CN200880108903 A CN 200880108903A CN 200880108903 A CN200880108903 A CN 200880108903A CN 101809752 A CN101809752 A CN 101809752A
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- 239000000463 material Substances 0.000 claims abstract description 95
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- 239000002184 metal Substances 0.000 claims abstract description 87
- 230000003287 optical effect Effects 0.000 claims abstract description 81
- 239000002346 layers by function Substances 0.000 claims abstract description 21
- 229910052709 silver Inorganic materials 0.000 claims abstract description 10
- 239000004332 silver Substances 0.000 claims abstract description 10
- 239000011521 glass Substances 0.000 claims abstract description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 49
- 238000003475 lamination Methods 0.000 claims description 36
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- 229910052718 tin Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
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- BNEMLSQAJOPTGK-UHFFFAOYSA-N zinc;dioxido(oxo)tin Chemical compound [Zn+2].[O-][Sn]([O-])=O BNEMLSQAJOPTGK-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention relates to a photovoltaic cell comprising a photovoltaic absorbent material, said cell including a front face substrate (10), particularly a transparent glass substrate. A main surface of the substrate is provided with a transparent electrode coating (100) formed by a stack of thin layers including a metal functional layer (40) based, in particular, on silver, and at least two anti-reflective coatings (20, 60). The invention is characterised in that the optical thickness of the anti-reflective coating (60) disposed on top of the metal functional layer (40) on the side opposite that of the substrate is equal to approximately four times the optical thickness of the anti-reflective coating (20) disposed below the metal functional layer (40) on the side of the substrate.
Description
The present invention relates to photocell front substrate, especially transparent glass substrate.
In photocell, the electro-optical system that has at the photoelectric material of generation electric energy under the incident radiation effect is placed between back substrate and the front substrate, and this front substrate is that incident radiation arrives first substrate that passes before the photoelectric material.
In photocell, when the main arrival direction of incident radiation is considered to top-down, this front substrate towards generally include below the first type surface of photoelectric material be positioned at below the transparent electrode coating that electrically contacts of photoelectric material.
This front electrode coating so configuration example such as photronic negative terminal.
Certainly, this photocell also comprises the electrode coating that constitutes the photocell anode subsequently on the orientation substrate overleaf, but the electrode coating of back substrate generally is not transparent.
In meaning of the present invention, term " photocell " should be understood to mean any component-assembled part that produces electric current by the solar radiation conversion between its electrode, no matter the size of this assembly how and regardless of the voltage and the intensity of the electric current that generates, particularly no matter whether this component-assembled part has one or more internal electrical connects (series connection and/or in parallel).Therefore " photocell " notion in the meaning of the present invention equals " photovoltaic module " or " photovoltaic panel " in this article.
The material of transparent electrode coating that is usually used in the front substrate is normally based on the material of transparent conductive oxide (English is TCO), for example zinc oxide (ZnO:Al) that mixes based on indium tin oxide (ITO) or based on aluminium or boron doped zinc oxide (ZnO:B) or the tin oxide (SnO that mixes based on fluorine
2: material F).
These materials chemistry depositions, for example CVD (PECVD) that strengthens by chemical vapor deposition (CVD), optional plasma, or physical deposition, for example by cathodic sputtering, sputter (the being magnetron sputtering) vacuum moulding machine that optional magnetic field strengthens.
But, desirable electricity is led or desirable more rightly low resistance in order to obtain, must with about 500 to 1000 nanometers and even higher sometimes big relatively physical thickness deposit the electrode coating of making by the TCO sill, when they are deposited as the layer of this thickness, consider the cost of these materials, this is expensive.
When sedimentation needed heat supply, this further improved manufacturing cost.
Another major defect of the electrode coating of being made by the TCO sill is the following fact: for selected materials, its physical thickness be all the time the final electricity that obtains lead with the final transparency that obtains between trade off, because physical thickness is high more, conductivity is high more, but transparency is low more, and on the contrary, physical thickness is low more, transparency is high more, but conductivity is low more.
Therefore, for the electrode coating of making by the TCO sill, can not optimize the conductivity and the transparency thereof of electrode coating independently.
Photronic method is made in the prior art instruction of International Patent Application WO 01/43204, wherein transparent electrode coating is not to be made by the TCO sill, but constitute by the stack of thin that is deposited on the positive board main, this coating comprises at least one metal function layer, especially based on the metal function layer of silver, at least two antireflection coatings, each self-contained at least one antireflection layer of described antireflection coatings, described functional layer is between these two antireflection coatings.
The method is characterized in that when considering that it enters the incident light direction of battery from the top, it is depositing at least one high refracting layer of being made by oxide or nitride below metal function layer and above the photoelectric material.
The document provides exemplary, wherein surround two antireflection coatings of metal function layer, promptly be positioned on the orientation substrate below the metal function layer antireflection coatings and with the antireflection coatings above the metal function layer of being positioned at of substrate opposite side, each self-contained at least one by high-refraction material, be zinc oxide (ZnO) or silicon nitride (Si in this case
3N
4) layer made.
But this solution can further be improved.
The absorption of observing the normal optical electric material differs from one another, and the inventor attempts to be identified for defining the required basic optical characteristic of stack of thin (being used to form the electrode coating in photocell front) of the above-mentioned type.
Therefore the present invention for photocell front substrate, comprises the light path of determining to obtain best photocell efficient according to selected photoelectric material.
Therefore theme of the present invention in its widest meaning, is the photocell with absorbability photoelectric material as claimed in claim 1.This battery comprises the front substrate, especially transparent glass substrate, it comprises on first type surface by comprising the metal function layer, especially based on the metal function layer of silver, the transparent electrode coating that the stack of thin of at least two antireflection coatings constitutes, each self-contained at least one antireflection layer of described antireflection coatings, described functional layer is between these two antireflection coatings.About four times of the optical thickness of the antireflection coatings below the optical thickness that is positioned at the antireflection coatings above the metal function layer with the substrate opposite side equals to be positioned on the orientation substrate metal function layer.
Therefore the optical thickness that is positioned at the described antireflection coatings of metal function layer top is preferably 3.1 to 4.6 times of optical thickness of the antireflection coatings that is positioned at metal function layer below, comprise these endpoint values, or even the optical thickness that is positioned at the antireflection coatings of metal function layer top be 3.2 to 4.2 times of optical thickness that are positioned at the antireflection coatings of metal function layer below, comprise these endpoint values.
In addition, preferably, equal the maximum absorption wavelength λ of this photoelectric material at the optical thickness that is positioned at the antireflection coatings below the metal function layer on the orientation substrate
mAbout 1/8, equaling the maximum absorption wavelength λ of this photoelectric material with the optical thickness that is positioned at the antireflection coatings above the metal function layer of substrate opposite side
mAbout 1/2.
In an advantageous variant, the maximum absorption wavelength λ of this photoelectric material
mYet use the solar spectrum weighting.
In this modification, this photronic being characterised in that, the absorption spectrum that equals this photoelectric material at the optical thickness that is positioned at the antireflection coatings below the metal function layer on the orientation substrate multiply by the maximum wavelength λ of the product of solar spectrum
MAbout 1/8, the absorption spectrum that equals this photoelectric material at the optical thickness that is positioned at the antireflection coatings above the metal function layer with the substrate opposite side multiply by the maximum wavelength λ of the product of solar spectrum
MAbout 1/2.
Therefore, according to the present invention, as the maximum absorption wavelength λ of this photoelectric material
mFunction, or preferably multiply by the maximum wavelength λ of the product of solar spectrum as the absorption spectrum of this photoelectric material
MFunction, determine optimum pathway, to obtain photronic best efficient.
Solar spectrum mentioned in this article is the AM1.5 solar spectrum by the ASTM standard code.
In meaning of the present invention, term " coating " should be understood to mean the layer that single or several different materials can be arranged in this coating.
In meaning of the present invention, " antireflection layer " should be understood that: from the angle of its character, this material is nonmetal, promptly is not metal.In the scope of the invention, this term should not be construed as introduces restriction to the resistivity of this material, and it can be conductor material (common ρ＜10
-3Ω .cm) or insulating material (common ρ＞10
9Ω .cm) or semi-conducting material (usually between preceding two values).
Fully surprisingly, can obtain improved photocell efficient according to the light path of the electrode coating of the lamination with function thin layer of the present invention, and improved tolerance to the stress that produces in the battery operation process.
The purpose that centers on the coating of metal function layer is to make this metal function layer " antireflective ".Therefore they are known as " antireflection coatings ".
In fact, although this functional layer can obtain the desirable conductivity for this electrode coating alone, even when little physical thickness (about 10 nanometers), described layer will hinder light strongly to be passed through.
Under the situation that does not have this antireflective system, at this moment transmittance will be low-down, light reflection too strong (in visible light and near infrared ray, making photocell because it relates to).
Term " light path " has specific meanings and the summation of the different optical thickness of the following neighbour of the function metal level of the interference filter that is used to represent make thus and last neighbour's various antireflection coatings in this article.What remind is, the optical thickness of coating equals this material when having only individual layer in coating physical thickness multiply by the product of its index, or the physical thickness that equals the material of each layer when having multilayer multiply by the summation of the product of its index.
Light path according to the present invention is the function of the physical thickness of metal function layer on absolute sense, but in fact, in the physical thickness range of the function metal level that can obtain desirable conductivity, it is constant.Therefore, when this functional layer based on silver, be individual layer and physical thickness when (comprising these endpoint values) with 5 to 20 nanometers, solution of the present invention is suitable.
The type of stack of thin of the present invention is the glass pane that the thermal insulation with raising of " low-launch-rate (bas-é missif) " and/or " day photocontrol " type is made in known being used in building or automotive glazing field.
Therefore the inventor notices, some lamination that is used for those types of low-emissivity glazing is particularly suitable for making the electrode coating that photocell is used, particularly be known as the lamination of " hardenable " lamination or " to be quenched " lamination, i.e. used those when hope makes the supporting substrate of this lamination stand quenching heat treatment.
Therefore, an also theme of the present invention is to have the stack of thin that the architectural glazings of feature of the present invention is used, especially this class lamination of " hardenable " or " waiting to quench ", the low-launch-rate lamination of low-launch-rate lamination, particularly " hardenable " or " waiting to quench " is used to make the purposes of photocell front substrate in particular.
Therefore, an also theme of the present invention is through the purposes of this stack of thin of quenching heat treatment and has stood the purposes of the stack of thin that the surperficial heat treated architectural glazings with feature of the present invention of the type known uses from french patent application FR 2911130.
Term " hardenable " lamination or substrate should be understood to mean in meaning of the present invention and keep basic optical character and thermal property (representing with the resistance per square directly related with emissivity) in heat treatment process.
Therefore, can for example on the same front of building, will comprise all the quenching substrate that covers with same tier and close to each other the putting together of glass pane plate of the substrate that do not quench, can not be distinguished from each other by the simple range estimation of reflection colour and/or light reflection/transmission.
For example, before heat treatment/substrate that has the lamination of following variation afterwards or be coated with lamination be regarded as hardenable because these variations can not be discovered by naked eyes:
-less than 3% or even less than 2% low transmittance change Delta T
L(visible light); And/or
-less than 3% or even less than 2% low light change of reflection Δ R
L(visible light); And/or
-less than 3 or even less than 2 low change color (in the Lab system)
" to be quenched " lamination or substrate should be understood to mean the substrate through covering in meaning of the present invention optical property and thermal property are acceptable after heat treatment, and are unacceptable before, or in no case are all acceptable.
For example, do not satisfy before heat treatment having following properties after the heat treatment in these characteristics at least one lamination or the substrate that is coated with lamination in the present invention, be regarded as " to be quenched ":
-at least 65% or 70% or even at least 75% high transmittance T
L(in visible light); And/or
-less than 10% or less than 8% or even (in visible light, pass through 1-T less than 5% low light absorption
L-R
LDetermine); And/or
-with the same at least good resistance per square of conductive oxide (r é sistance par carr é) R commonly used
, particularly less than 20 Ω/, even less than 15 Ω/, even be equal to or less than 10 Ω/.
Therefore, this electrode coating must be transparent.Its therefore after being installed on the substrate, must have 65% or even 75%, more preferably 85%, more specifically at least 90% the minimum average B configuration transmittance between 300 to 1200 nanometers.
If this front substrate behind the stringer and before it is assembled in the photocell through heat-treated, quenching heat treatment especially, the substrate that is coated with the lamination that serves as electrode coating may have low transparency fully before this heat treatment.For example, it can have before this heat treatment less than 65% or even less than 50% the transmittance in visible light.
Importantly, this electrode coating was transparent before heat treatment, and had as at least 65% after heat treatment, even 75%, more preferably 85%, or more specifically at least 90% the average light transmission of (in visible light) between 300 to 1200 nanometers.
In addition, in the scope of the invention, this lamination is not to have best as far as possible transmittance utterly, but has best as far as possible transmittance in photronic background of the present invention.
In a specific embodiments, do not have and concern the following fact:
-on the one hand, equal the maximum absorption wavelength λ of this photoelectric material at the optical thickness that is positioned at the antireflection coatings below the metal function layer on the orientation substrate
mAbout 1/8, equaling the maximum absorption wavelength λ of this photoelectric material with the optical thickness that is positioned at the antireflection coatings above the metal function layer of substrate opposite side
mAbout 1/2;
-or on the other hand, the absorption spectrum that equals this photoelectric material at the optical thickness that is positioned at the antireflection coatings below the metal function layer on the orientation substrate multiply by the maximum wavelength λ of the product of solar spectrum
MAbout 1/8, the absorption spectrum that equals this photoelectric material at the optical thickness that is positioned at the antireflection coatings above the metal function layer with the substrate opposite side multiply by the maximum wavelength λ of the product of solar spectrum
MAbout 1/2,
Electrode coating of the present invention preferably includes the conductive terminal layer away from substrate (and contact with photoelectric material), especially based on the layer of transparent conductive oxide (TCO).Therefore, easily therefore the charge transfer between control electrode coating and the photoelectric material also can improve battery efficiency.
(it is equivalent to the resistance per square R of this layer to this conductive terminal layer by the electricalresistivity
Multiply by its thickness) as 2 * 10
-4Ω .cm≤ρ≤10 Ω .cm or even as 1 * 10
-4The material of Ω .cm≤ρ≤10 Ω .cm is made.This conductive terminal layer preferably has and is 50 to 98% optical thickness from the optical thickness of substrate antireflection coatings farthest, especially is 85 to 98% optical thickness from the optical thickness of substrate antireflection coatings farthest.
Although this does not recommend, be not impossible constitute at the whole antireflection coatings that is positioned at above the metal function layer, thereby simplify sedimentation by the quantity that reduces the different layers that will deposit by this conductive terminal layer with the substrate opposite side.
On the contrary, the antireflection coatings that is arranged in metal function layer top (at its whole thickness) electric insulation fully.
The transparent conductive oxide that is applicable to this embodiment of implementing to have the conductive terminal layer is selected from: ITO, ZnO:Al, ZnO:B, ZnO:Ga, SnO
2: F, TiO
2: Nb, stannic acid cadmium, mixing tin zinc oxide Sn
xZn
yO
Z(wherein x, y and z are numerical value), optional for example with antimony Sb doping, and all transparent conductive oxides are obtained by at least a column element down usually: Al, Ga, Sn, Zn, Sb, In, Cd, Ti, Zr, Ta, W and Mo, especially obtain by one of these elements and by the another kind of at least oxide that mixes in these elements, or at least two kinds of acquisitions in these elements and optional by the mixed oxide of the third doping at least in these elements.
Preferably, the optical thickness that is positioned at the described antireflection coatings of metal function layer top is the maximum absorption wavelength λ of this photoelectric material
m0.45 to 0.55 times, comprise these endpoint values, more preferably, the optical thickness that is positioned at the described antireflection coatings of metal function layer top multiply by the maximum wavelength λ of the product of solar spectrum for the absorption spectrum of this photoelectric material
M0.45 to 0.55 times, comprise these endpoint values.
The optical thickness that is positioned at the antireflection coatings of metal function layer below is the maximum absorption wavelength λ of this photoelectric material
m0.075 to 0.175 times, comprise these endpoint values, preferably, the optical thickness that is positioned at the described antireflection coatings of metal function layer below multiply by the maximum wavelength λ of the product of solar spectrum for the absorption spectrum of this photoelectric material
M0.075 to 0.175 times, comprise these endpoint values.
The antireflection coatings that is positioned at metal function layer below also can have diffusion; particularly to chemical barrier function from the diffusion of the sodium of substrate, thus the guard electrode coating, more special function metal level; especially in optional heat treatment, especially in the quenching heat treatment process.
In another embodiment, this substrate comprises the bottom antireflection layer (couche antireflet debase) that has with the approaching low refractive index of this substrate low refractive index below electrode coating, described bottom antireflection layer is preferably based on silica or based on aluminium oxide or based on both mixture.
In addition, this dielectric layer can constitute the diffusion chemical barrier layer, particularly from the diffusion barrier of the sodium of substrate, so the guard electrode coating, more special function metal level is especially in any heat treatment, especially in the quenching heat treatment process.
In background of the present invention, dielectric layer is not participate in the layer of charge displacement (electric current) or its effect that participates in charge displacement to compare with other layer of this electrode coating and can be regarded as 0 layer.
In addition, this bottom antireflection layer preferably has 10 to 300 nanometers or 35 to 200 nanometers, the more more preferably physical thickness of 50 to 120 nanometers.
The metal function layer preferably is deposited on the thin dielectric layer with crystal form, and this thin dielectric layer is (therefore being known as " wetting layer ", because it promotes the suitable crystalline orientation of deposition metal level thereon) of crystallization preferably also.
This metal function layer can be based on silver, copper or gold, and can choose wantonly by another kind of at least doping the in these elements.
In normal way, " doping " is understood to mean element to exist by 10% the amount of mole quality less than metallic element in this layer, term "based" is understood to mean in normal way and mainly contains this material, promptly contains the layer of at least 50% this material by the mole quality.Therefore term "based" covers and mixes.
The stack of thin of making this electrode coating is the function signal layer coating preferably, promptly has the individual feature layer; It can not be the function multilayer.
This functional layer so preferred deposition be based on oxide, especially based on zinc oxide and optional the doping, and optional wetting layer top of being mixed by aluminium, or even directly deposit thereon.
The physics of this wetting layer (or actual) thickness is preferably 2 to 30 nanometers, more preferably 3 to 20 nanometers.
This wetting layer is a dielectric, and be preferably have as 0.5 Ω .cm＜ρ＜200 Ω .cm or as the electricalresistivity of 50 Ω .cm＜ρ＜200 Ω .cm (be meant the resistance per square R of this layer
Multiply by the product of its thickness) material.
This lamination by using the technology of vacuum, carries out a series of depositions as cathodic sputtering (optional magnetic field strengthens) and obtains usually.Also can provide one or even two coatings that are known as " barrier coat " as thin as a wafer; it does not constitute the part of antireflection coatings; be located immediately at the below of this function metal level (especially money base); on top or each face; should serve as bonding in the adjacent coating possible heat treatment process of after deposition, carrying out on the orientation substrate with under this functional layer; nucleation and/or protective finish; with coating adjacent on this functional layer serve as protection or " sacrifices " coating to prevent this function metal level because the invasion and attack of disposed thereon layer oxygen and/or migration and undermined; especially in optional heat treatment process; if even layer disposed thereon deposits by the cathodic sputtering in the presence of oxygen, because the infringement of oxygen migration generation.
In meaning of the present invention,, between these two sedimentary deposits or coating, another layer insertion can not be arranged when spelling out layer or coating when directly being deposited on (comprising one or more layers) below of another sedimentary deposit or coating or top.
Preferably, at least one barrier coat is based on Ni or Ti or based on Ni base alloy, especially based on the alloy of NiCr.
Preferably, comprising based on mixed oxide in coating below the metal function layer and/or the coating above the metal function layer on the orientation substrate, especially based on zinc-tin mixed oxide or indium tin mixed oxide (ITO) the layer.
In addition, can comprise layer in coating below the metal function layer and/or the coating above the metal function layer on the orientation substrate with high refractive index, especially be greater than or equal to 2.2 refraction index, for example based on the layer of the silicon nitride that randomly for example mixes with aluminium or zirconium.
In addition,, especially be equal to or higher than 2.35 refraction index, for example based on the layer of titanium oxide comprising layer in the coating below the metal function layer and/or the coating above the metal function layer on the orientation substrate with high refraction index.
This substrate can with front substrate opposite side above electrode coating, comprise coating based on photoelectric material.
Therefore the preferred structure of front of the present invention substrate has following type: substrate/(optional bottom antireflection layer)/electrode coating/photoelectric material, or following type: substrate/(optional bottom antireflection layer)/electrode coating/photoelectric material/electrode coating.
In a specific embodiments, the lamination that this electrode coating is used by architectural glazings, the lamination used of " hardenable lamination " or " to be quenched " architectural glazings in particular, low-launch-rate lamination especially, especially " hardenable " or " to be quenched " low-launch-rate lamination constitute, and this stack of thin has feature of the present invention.
The invention still further relates to the substrate that photocell of the present invention is used, especially has the substrate that the architectural glazings that is coated with stack of thin of feature of the present invention is used, especially has the substrate that " hardenable " that the architectural glazings of feature of the present invention uses or " to be quenched " architectural glazings are used, low-launch-rate substrate particularly, " hardenable " or " to be quenched " low-launch-rate substrate that especially have feature of the present invention.
Therefore, theme of the present invention also is this substrate that has feature of the present invention and use through the architectural glazings that is coated with stack of thin of quenching heat treatment, and the substrate used of the heat treated architectural glazings that is coated with stack of thin of this type that has feature of the present invention and know in the french patent application FR 2911130 that associates.
All layers of this electrode coating all preferably deposit by evaporating deposition technique, but in no case get rid of this lamination ground floor or preceding which floor can deposit by other technology, for example by the pyrolysis-type pyrolysis technique or pass through CVD, choose wantonly under vacuum, and optional strengthen by plasma.
Advantageously, has the mechanical resistance of electrode coating of the present invention of stack of thin also far above the TCO electrode coating.Therefore, can improve the photronic life-span.
Advantageously, the electrode coating of the present invention with stack of thin also has and the same at least good resistance of TCO conductive oxide commonly used.The resistance per square R of electrode coating of the present invention
Be 1 to 20 Ω/, or even 2 to 15 Ω/, for example about 5 to 8 Ω/.
Advantageously, the electrode coating of the present invention with stack of thin also has and the same at least good transmittance in visible light of TCO conductive oxide commonly used.Transmittance in the visible light of electrode coating of the present invention is 50 to 98%, even 65 to 95%, for example about 70 to 90%.
By outstanding details of the present invention of following non-limiting examples and the favorable characteristics that describes by accompanying drawing, wherein:
-Fig. 1 shows the photocell front substrate of prior art, is coated with the electrode coating of being made by transparent conductive oxide and has the bottom antireflection layer;
-Fig. 2 shows photocell of the present invention front substrate, is coated with the electrode coating that is made of function thin layer lamination and has the bottom antireflection layer;
-Fig. 3 shows the quantum efficiency curve of three kinds of photoelectric materials;
-Fig. 4 shows the corresponding actual efficiency curve of product that multiply by solar spectrum with the absorption spectrum of these three kinds of photoelectric materials;
-Fig. 5 shows the principle of photronic endurance test; With
-Fig. 6 shows photronic cross-sectional view.
In Fig. 1,2,5 and 6, for making their easier checking, the ratio between the thickness of different coating, layer and material is not observant.
Fig. 1 show the photocell front substrate 10 of prior art with absorbability photoelectric material 200 ', the transparent electrode coating 100 that described substrate 10 ' comprise on first type surface is made of TCO conductive layer 66 '.
With front substrate 10 ' place photocell so that described front substrate 10 ' be that incident radiation R arrives first substrate that passes before the photoelectric material 200.
Substrate 10 ' also comprise, electrode coating 100 ' below, promptly directly substrate 10 ' on, have the low refractive index n that approaches this substrate
15 Bottom antireflection layer 15.
Fig. 2 shows photocell of the present invention front substrate 10.
The stack of thin of the transparent electrode coating 100 of pie graph 2 is laminated construction of low-launch-rate type of substrate, and optional is hardenable or to be quenched, and has the function individual layer, as the commercial architectural glazings field that can be used for building.
Based on shown in have a function individual layer laminated construction make 12 embodiment, label is 1 to 12:
-for embodiment 1,2; 5,6; 9,10, based on Fig. 1; With
-for embodiment 3,4; 7,8; 11,12, based on Fig. 2, except this lamination do not contain intercept to go up coating (
De sur-blocage).
In addition, in following all embodiment, this stack of thin is deposited on the substrate of being made by the clear soda-lime glass 4 of 4 millimeters of thickness 10.
Zinc oxide according to the electrode coating 100 of the embodiment of Fig. 1 ' mix based on the aluminium of conduction.
Formation is made of stack of thin according to each lamination of the electrode coating 100 of the embodiment of Fig. 2, and this stack of thin comprises:
-antireflection layer 24, it is based on the dielectric layer of titanium oxide, index n=2.4;
-antireflection layer 26, it is based on the oxide-base wetting layer, especially based on zinc oxide, randomly mixes dielectric, index n=2;
-randomly, can be located immediately at functional layer 40 belows but the following adjacent barrier coat that do not provide herein (indicating), for example based on Ti or based on the NiCr alloy; If there is not wetting layer 26, this coating is normally necessary, but is not absolutely necessary;
Therefore the single functional layer 40 of-silvery is located immediately on the wetting coating 26 herein;
-can be located immediately on the functional layer 40 based on Ti or based on the last adjacent barrier coat 50 of NiCr alloy, but do not provide in these embodiments;
-based on the dielectric antireflection layer 64 of zinc oxide, index n=2 and resistivity are about 100 Ω .cm, this layer is directly deposited on barrier coat 50 by ceramic target at this; Subsequently
-conductive layer 66 also is provided, it is antireflection layer and terminating layer, based on the zinc oxide that aluminium mixes, index n=2, its resistivity is substantially near 1100 μ Ω .cm.
In even number embodiment, photoelectric material 200 is based on microcrystal silicon (its crystallite size is about 100 nanometers), and in odd number embodiment, photoelectric material 200 is based on amorphous (being amorphous) silicon.
The quantum efficiency QE of these materials and cadmium telluride (another photoelectric material that also is suitable in the present invention) is presented among Fig. 3.
In this prompting is that quantum efficiency QE represents to have the probability (0 to 1) that is converted to electron-hole pair along the incident photon of the wavelength of abscissa as known.
In Fig. 3 as can be seen, maximum absorption wavelength λ
m, i.e. wavelength during quantum efficiency maximum (promptly being in its peak):
-amorphous silicon a-Si, i.e. λ
mA-Si is 520 nanometers;
-microcrystal silicon μ c-Si, i.e. λ
mμ c-Si is 720 nanometers; And
-cadmium telluride CdTe, i.e. λ
mCdTe is 600 nanometers.
Under first approximation, this maximum absorption wavelength λ
mBe enough.
Has the maximum absorption wavelength λ that equals this photoelectric material so at the antireflection coatings 20 that is positioned on the orientation substrate below the metal function layer 40
mAbout 1/8 optical thickness, have the maximum absorption wavelength λ that equals this photoelectric material so at the antireflection coatings 60 that is positioned at above the metal function layer 40 with the substrate opposite side
mAbout 1/2 optical thickness.
Following table 1 has been summarized for each coating 20,60, according to the preferable range in the optical thickness of nanometer of these three kinds of materials.
Table 1
But, have been found that and can improve the optics definition of this lamination by considering quantum efficiency (to obtain improved actual recovery) by sunlight wavelength distribution convolution (convoluant) with this probability and the face of land.At this, we use normalization solar spectrum AM1.5.
In this case, the absorption spectrum that equals this photoelectric material at the optical thickness that is positioned at the antireflection coatings 20 below the metal function layer 40 on the orientation substrate multiply by the maximum wavelength λ of the product of solar spectrum
MAbout 1/8 and multiply by the maximum wavelength λ of the product of solar spectrum at the absorption spectrum that the optical thickness that is positioned at the antireflection coatings 60 above the metal function layer 40 with the substrate opposite side equals this photoelectric material
MAbout 1/2.
As among Fig. 4 as can be seen, the absorption spectrum of this photoelectric material multiply by the maximum wavelength λ of the product of solar spectrum
M, i.e. wavelength during efficient maximum (being peak):
-amorphous silicon a-Si, i.e. λ
MA-Si is 530 nanometers;
-microcrystal silicon μ c-Si, i.e. λ
Mμ c-Si is 670 nanometers; And
-cadmium telluride CdTe, i.e. λ
MCdTe is 610nm.
Following table 2 has been summarized the preferable range in the optical thickness of nanometer of each coating 20,60 according to these three kinds of materials.
Table 2
In all embodiments, between substrate and electrode coating 100, deposited bottom antireflection layer 15 based on silica.Because its refraction index n
15Low and near the refraction index of substrate, in the definition of the light path of lamination of the present invention, do not consider its optical thickness.
The sedimentary condition of these layers is well known by persons skilled in the art, because it relates to obtain lamination with the similar mode of those layers that is used for low-launch-rate or day photocontrol application.
In this respect, those skilled in the art can referenced patent application EP 718250, EP 847965, EP 1366001, EP 1412300 or EP 722913.
Following table 3,5 and 7 summarized among the embodiment 1 to 12 each the material of each layer and the physical thickness that records with nanometer, table 4,6 and 8 is listed the key property of these embodiment.
By so-called " TSQE " method calculated performance feature P, use the product of the quantum efficiency QE of spectrum integral in the whole radiation scope of considering and battery in the method.
All embodiment 1 to 12 are imposed according to the test of measurement electrode coating of carrying out shown in Figure 5 to the tolerance of the stress of (especially in the presence of electrostatic field) generation in the battery operation process.
Be used for this test, substrate film 10,10 ' (for example 5 centimetres of 5 cm x and be coated with electrode coating 100,100 ', but do not have photoelectric material 200) be deposited on the metallic plate 5 that places on about 200 ℃ of thermals source 6.
This test relate to be coated with electrode coating 100,100 ' substrate 10,10 ' applied electric field 20 minutes, it is by carrying out making electric contact 102 on the described coating surface and this contact 102 and metallic plate 5 be connected on the terminal of carrying the galvanic power supply 7 of about 200V.
When this off-test, in case, just on the whole surface of sample, measure the residual stratum proportion that is coated with the sample cooling.
This ratio of the coating that stays behind the tolerance test is represented as PRT.
The first serial embodiment
Table 3
| Layer/ | Embodiment | 1 | Embodiment 2 | Embodiment 3 | Embodiment 4 |
| 200: μ c-Si ( |
??1500 | ??710 | ??720 | ??1500 | |
| ??66：ZnO:Al | ??1020.6 | ??1020.6 | ??129.3 | ??129.3 | |
| ??64：ZnO | ??6 | ??6 | |||
| ??40：Ag | ??7 | ??7 | |||
| ??26：ZnO | ??7 | ??7 | |||
| ??24：TiO 2 | ??24.3 | ??24.3 | |||
| ??15：SiO 2 | ??110 | ??110 | ??110 | ??110 |
Table 4
In this first series, the optical thickness of the coating 60 above the function metal level is 270.6 nanometers (=(129.3+6) * 2), and the optical thickness of the coating 20 below the function metal level is 72.32 nanometers (=24.3 * 2.4+7 * 2).
In these were a series of, the optical thickness of antireflection coatings 60 equaled 3.74 times of optical thickness of antireflection coatings 20.
This first series shows, can obtain to be constituted and be coated with by stack of thin the electrode coating (embodiment 4) of amorphous silicon, and it is compared with the TCO electrode coating that is coated with identical non-crystalline material (embodiment 2) has better (low 3.5 ohm/) resistance per square R
With better (high 4.8%) performance P.The coating 20 of embodiment 4 and 60 optical thickness are in the tolerance interval according to the a-Si photoelectric material 200 of table 1 and table 2.But, coating 20 and 60 optical thickness and the λ in the table 2
M/ 8 and λ
MThe degree of closeness of/2 values be higher than respectively with table 1 in λ
m/ 8 and λ
mThe degree of closeness of/2 values.
In this series, the electrode coating (embodiment 3) that constitutes and be coated with microcrystal silicon by stack of thin is compared with the TCO electrode coating that is coated with identical micro crystal material (embodiment 1) has better resistance per square R
, but performance P relatively poor (low 1.8%).Optical thickness 270.6 nanometers of the coating 60 of embodiment 3 are not in the tolerance interval 324-396 nanometer according to the μ c-Si photoelectric material 200 of table 1, also not in the tolerance interval 302-369 nanometer according to the μ c-Si photoelectric material 200 of table 2.
In addition, the ratio of the residual electrode coating with stack of thin (embodiment 3 and 4) is more much higher than the ratio (embodiment 1 and 2) of TCO electrode coating residual behind the tolerance test behind the tolerance test, regardless of photoelectric material.
Second series embodiment
Table 5
| Layer/ | Embodiment | 5 | |
|
Embodiment 8 |
| 200: μ c-Si ( |
??1490 | ??690 | ??1510 | ??700 | |
| ??66：ZnO:Al | ??1094.6 | ??1094.6 | ??166.6 | ??166.6 | |
| ??64：ZnO | ??- | ??- | ??6 | ??6 | |
| ??40：Ag | ??- | ??- | ??7 | ??7 | |
| ??26：ZnO | ??- | ??- | ??7 | ??7 | |
| ??24：TiO 2 | ??- | ??- | ??39 | ??39 | |
| ??15：SiO 2 | ??110 | ??110 | ??110 | ??110 |
Table 6
In this second series, the optical thickness of the coating 60 above the function metal level is 345 nanometers (=(166.6+6) * 2), and the optical thickness of the coating 20 below the function metal level is 107.6 nanometers (=39 * 2.4+7 * 2).
In these were a series of, the optical thickness of antireflection coatings 60 equaled 3.2 times of optical thickness of antireflection coatings 20.
Different with first series, second series shows, can obtain to be coated with the electrode coating (embodiment 7) that is made of stack of thin of microcrystal silicon, it is compared with the TCO electrode coating that is coated with identical micro crystal material (embodiment 5) has better (low 3 ohm/) resistance per square R
With better (high 6%) performance P.The coating 20 of embodiment 7 and 60 optical thickness are in the tolerance interval according to the μ c-Si photoelectric material 200 of table 1 and table 2.But, the optical thickness of coating 60 and the μ c-Si λ in the table 2
MThe degree of closeness of/2 values be higher than with table 1 in λ
mThe degree of closeness of/2 values.
In this series, the electrode coating (embodiment 8) that constitutes and be coated with amorphous silicon by stack of thin is compared with the TCO electrode coating that is coated with identical non-crystalline material (embodiment 6) has better resistance per square R
, but performance P relatively poor (low 13.1%).Optical thickness 345 nanometers of the coating 60 of embodiment 8 and optical thickness 107.6 nanometers of coating 20 are not respectively in tolerance interval 234-286 nanometer and 39-91 nanometer according to the a-Si photoelectric material 200 of table 1, also respectively not in tolerance interval 239-292 nanometer and 40-93 nanometer according to the a-Si photoelectric material 200 of table 2.
In addition, the ratio of the residual electrode coating that contains stack of thin (embodiment 7 and 8) is more much higher than the ratio (embodiment 5 and 6) of TCO electrode coating residual behind the tolerance test behind the tolerance test, regardless of photoelectric material.
Tertiary system row embodiment
Table 7
| Layer/material | Embodiment 9 | |
Embodiment 11 | Embodiment 12 |
| 200: μ c-Si (embodiment 9 and 11) or a-Si ( |
??1460 | ??720 | ??1480 | ??702 |
| ??66：ZnO:Al | ??1117.4 | ??1117.4 | ??107 | ??107 |
| ??64：ZnO | ??- | ??- | ??6 | ??6 |
| ??40：Ag | ??- | ??- | ??7.2 | ??7.2 |
| ??26：ZnO | ??- | ??- | ??7 | ??7 |
| ??24：TiO 2 | ??- | ??- | ??21.5 | ??21.5 |
| ??15：SiO 2 | ??110 | ??110 | ??110 | ??110 |
Table 8
In this tertiary system row, the optical thickness of the coating 60 above the function metal level is 266 nanometers (=(107+6) * 2), and the optical thickness of the coating 20 below the function metal level is 65.6 nanometers (=21.5 * 2.4+7 * 2).
In these were a series of, the optical thickness of antireflection coatings 60 equaled 4.05 times of optical thickness of antireflection coatings 20.
As for first series, tertiary system tabulation is bright, can obtain to be constituted and be coated with by stack of thin the electrode coating (embodiment 12) of amorphous silicon, it is compared with the TCO electrode coating that is coated with identical non-crystalline material (embodiment 10) has better (low 2.9 ohm/) resistance per square R
With better (high 9.6%) performance P.The coating 20 of embodiment 12 and 60 optical thickness are in the tolerance interval according to the a-Si photoelectric material 200 of table 1 and 2.But, coating 20 and 60 optical thickness and the λ in the table 2
M/ 8 and λ
MThe degree of closeness of/2 values be higher than respectively with table 1 in λ
m/ 8 and λ
mThe degree of closeness of/2 values.The coating 20 of embodiment 12 and these optical thicknesses of 60 also almost equal the λ of table 2 respectively
m/ 8 and λ
m/ 2 values.
In this series, the electrode coating (embodiment 11) that constitutes and be coated with microcrystal silicon by stack of thin is compared with the TCO electrode coating that is coated with identical micro crystal material (embodiment 9) has better resistance per square R
, but performance P relatively poor (low 11.6%).Optical thickness 266 nanometers of the coating 60 of embodiment 11 are not in the tolerance interval 324-396 nanometer according to the μ c-Si photoelectric material 200 of table 1, also not in the tolerance interval 302-369 nanometer according to the μ c-Si photoelectric material 200 of table 2.
In addition, the ratio of residual stack of thin electrode coating (embodiment 11 and 12) is more much higher than the ratio (embodiment 9 and 10) of TCO electrode coating residual behind the tolerance test behind the tolerance test, regardless of photoelectric material.
By these tertiary system row are compared with first series, can see that separately the coating 20 of embodiment 12 and 60 optical thickness (65.6 nanometers and 266 nanometers respectively) more (are considered λ near the ideal theory value of a-Si than embodiment 4 (72.3 nanometers and 270.6 nanometers respectively)
mBe respectively 65 nanometers and 260 nanometers, consider λ
MBe respectively 66 nanometers and 265 nanometers), at resistance per square R much at one
Under the PRT much at one (being the ratio of the electrode coating that contains stack of thin residual behind the tolerance test), the performance of embodiment 12 higher (high 4.8%).
Therefore this tertiary system row confirm the following fact: preferably, the absorption spectrum that equals this photoelectric material at the optical thickness that is positioned at the antireflection coatings 20 below the metal function layer 40 on the orientation substrate multiply by the maximum wavelength λ of the product of solar spectrum
MAbout 1/8 and multiply by the maximum wavelength λ of the product of solar spectrum at the absorption spectrum that the optical thickness that is positioned at the antireflection coatings 60 above the metal function layer 40 with the substrate opposite side equals this photoelectric material
MAbout 1/2.
In addition, it should be noted that the stack of thin that forms the electrode coating in the scope of the invention must definitely not have very high transparency.
Therefore, under the situation of embodiment 3, only being coated with the lamination that forms electrode coating and not having the transmittance in visible light of the substrate of photoelectric material is 75.3%, and uses the TCO electrode coating and do not have the equal embodiment of photoelectric material, i.e. the transmittance in visible light of embodiment 1 is 85%.
ZnO/Ag/ZnO type or Sn
xZn
yO
z/ Ag/Sn
xZn
yO
zThe enough simple lamination with feature of the present invention (especially because they do not contain barrier coat) of type (wherein x, y and z are exponential quantity separately) or ITO/Ag/ITO type seems the technical desired use that is applicable to according to inferring, but the third has than preceding two kinds of more expensive risks.
The photocell 1 that has front of the present invention substrate 10 (incident radiation R penetrates this front substrate) and have back substrate 20 of Fig. 6 show cross section plane view.
For example by amorphous silicon or crystallization or microcrystal silicon or cadmium telluride or two copper indium diselenide (CuInSe
2Or CIS) or the photoelectric material 200 made of Copper Indium Gallium Selenide between these two substrates.It is made of the semiconductor material layer 240 that the semiconductor material layer 220 and the p-of n-doping mix, and produces electric current.Insert between the semiconductor material layer 220 that front substrate 10 and n-on the one hand mix respectively and on the other hand the semi-conducting material 240 that mixes of p-and the electrode coating 100,300 between the back substrate 20 finished should the electricity structure.
Electrode coating 300 can be based on silver or aluminium, or it also can constitute by comprising at least one metal function layer and stack of thin according to the invention.
The present invention has above been described for example.Certainly, those skilled in the art can make various modification of the present invention under the situation that does not break away from the claim of determining as claims thus.
Claims (20)
1. the photocell (1) that has the absorbability photoelectric material, described battery comprises front substrate (10), especially transparent glass substrate, it comprises on first type surface by comprising metal function layer (40), especially the transparent electrode coating (100) that constitutes based on the stack of thin of the metal function layer of silver and at least two antireflection coatings (20,60), each self-contained at least one antireflection layer (24,26 of described antireflection coatings; 64,66), described functional layer (40) is positioned at this two antireflection coatings (20,60) between, it is characterized in that equaling on orientation substrate, to be positioned at about four times of optical thickness of the antireflection coatings (20) of metal function layer (40) below at optical thickness with the antireflection coatings (60) that is positioned at metal function layer (40) top of substrate opposite side.
2. photocell as claimed in claim 1 (1), the optical thickness that it is characterized in that being positioned at the described antireflection coatings (60) of metal function layer (40) top is 3.1 to 4.6 times of the optical thickness that is positioned at the antireflection coatings (20) below the metal function layer (40), comprises these endpoint values.
3. photocell as claimed in claim 1 or 2 (1) is characterized in that this electrode coating (100) comprises away from the conductive layer (66) of substrate, and this conductive layer has 2 * 10
-4The electricalresistivity of Ω .cm to 10 Ω .cm, especially based on TCO the layer.
4. photocell as claimed in claim 3 (1), it is characterized in that optical thickness that described conductive layer has for from 50 to 98% of the optical thickness of substrate antireflection coatings (60) farthest, especially is from 85 to 98% of the optical thickness of substrate antireflection coatings (60) farthest.
5. as each described photocell (1) of claim 1 to 4, the optical thickness that it is characterized in that being positioned at the described antireflection coatings (60) of metal function layer (40) top is the maximum absorption wavelength λ of this photoelectric material
m0.45 to 0.55 times, comprise these endpoint values, preferably, the optical thickness that is positioned at the described antireflection coatings (60) of metal function layer (40) top multiply by the maximum wavelength λ of the product of solar spectrum for the absorption spectrum of this photoelectric material
M0.45 to 0.55 times, comprise these endpoint values.
6. as each described photocell (1) of claim 1 to 5, the optical thickness that it is characterized in that being positioned at the described antireflection coatings (20) of metal function layer (40) below is the maximum absorption wavelength λ of this photoelectric material
m0.075 to 0.175 times, comprise these endpoint values, preferably, the optical thickness that is positioned at the described antireflection coatings (20) of metal function layer (40) below multiply by the maximum wavelength λ of the product of solar spectrum for the absorption spectrum of this photoelectric material
M0.075 to 0.175 times, comprise these endpoint values.
7. as each described photocell (1) of claim 1 to 6, it is characterized in that described substrate (10) comprises having the low refractive index n approaching with the refraction index of this substrate in electrode coating (100) below
15Bottom antireflection layer (15), described bottom antireflection layer (15) is preferably based on silica or based on aluminium oxide or based on the two mixture.
8. photocell as claimed in claim 7 (1) is characterized in that the physical thickness that described bottom antireflection layer (15) has 10 to 300 nanometers.
9. as each described photocell (1) of claim 1 to 8, it is characterized in that functional layer (40) is deposited on the oxide that mixes based on randomly, especially above the wetting layer (26) based on the zinc oxide that randomly mixes.
10. as each described photocell (1) of claim 1 to 9, it is characterized in that functional layer (40) is located immediately at the below that at least one descends the top of adjacent barrier coat (30) and/or is located immediately at adjacent barrier coat (50) at least one.
11. photocell as claimed in claim 10 (1) is characterized in that at least one barrier coat (30,50) is based on Ni or Ti or based on Ni base alloy, especially based on the NiCr alloy.
12. as each described photocell (1) of claim 1 to 11, it is characterized in that comprising based on mixed oxide in coating below the metal function layer (20) and/or the coating above the metal function layer (60) on the orientation substrate, especially based on zinc-tin mixed oxide or indium tin mixed oxide (ITO) the layer.
13. as each described photocell (1) of claim 1 to 12, it is characterized in that having high refraction index comprising in the coating below the metal function layer (20) and/or the coating above the metal function layer (60) on the orientation substrate, especially be equal to or higher than the layer of 2.35 refraction index, as, for example based on titanium oxide the layer.
14. as each described photocell (1) of claim 1 to 13, it is characterized in that its with front substrate (10) opposite side comprise coating (200) based on photoelectric material in electrode coating (100) top.
15. as each described photocell (1) of claim 1 to 14, it is characterized in that the lamination that described electrode coating (100) is used by architectural glazings, especially the lamination used of " hardenable " or " to be quenched " architectural glazings, particularly low-launch-rate lamination, especially " hardenable " or " to be quenched " low-launch-rate lamination constitute.
16. the substrate that is coated with stack of thin (10) as each described photocell (1) usefulness of claim 1 to 15, especially the substrate used of architectural glazings, especially the substrate used of " hardenable " or " to be quenched " architectural glazings, low-launch-rate substrate particularly, especially " hardenable " or " to be quenched " low-launch-rate substrate, described stack of thin comprises metal function layer (40), especially based on the metal function layer of silver, at least two antireflection coatings (20,60), each self-contained at least one antireflection layer (24,26 of described antireflection coatings; 64,66), described functional layer (40) is positioned at this two antireflection coatings (20,60) between, it is characterized in that equaling on orientation substrate, to be positioned at about four times of optical thickness of the antireflection coatings (20) of metal function layer (40) below at optical thickness with the antireflection coatings (60) that is positioned at metal function layer (40) top of substrate opposite side.
Be used to make photocell (1) 17. be coated with the substrate of stack of thin, particularly as the purposes of the front substrate (10) of each described photocell (1) of claim 1 to 15, described substrate comprises by comprising metal function layer (40), especially based on the metal function layer of silver, at least two antireflection coatings (20,60) transparent electrode coating (100) that stack of thin constitutes, each self-contained at least one thin antireflection layer (24,26 of described antireflection coatings; 64,66), described functional layer (40) is positioned at this two antireflection coatings (20,60) between, equal on orientation substrate, to be positioned at about four times of optical thickness of the antireflection coatings (20) of metal function layer (40) below at optical thickness with the antireflection coatings (60) that is positioned at metal function layer (40) top of substrate opposite side.
18. purposes as claimed in claim 17, the substrate (10) that wherein comprises electrode coating (100) is the substrate that architectural glazings is used, especially the substrate used of " hardenable " or " to be quenched " architectural glazings particularly especially is " hardenable " or " to be quenched " low-launch-rate substrate.
19. as claim 17 or 18 described purposes, wherein said electrode coating (100) comprises away from the conductive layer (66) of substrate, this conductive layer has 2 * 10
-4The electricalresistivity of Ω .cm to 10 Ω .cm, especially based on TCO the layer.
20. purposes as claimed in claim 19, the optical thickness that wherein said conductive layer has is for from 50% to 98% of the optical thickness of substrate antireflection coatings (60) farthest, especially is from 85% to 98% of the optical thickness of substrate antireflection coatings (60) farthest.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0756767A FR2919429B1 (en) | 2007-07-27 | 2007-07-27 | FRONT PANEL SUBSTRATE OF PHOTOVOLTAIC CELL AND USE OF A SUBSTRATE FOR A FRONT PANEL OF PHOTOVOLTAIC CELL |
| FR0756767 | 2007-07-27 | ||
| FR0759182 | 2007-11-20 | ||
| FR0759182A FR2919430B1 (en) | 2007-07-27 | 2007-11-20 | FRONT PANEL SUBSTRATE OF PHOTOVOLTAIC CELL AND USE OF A SUBSTRATE FOR A FRONT PANEL OF PHOTOVOLTAIC CELL. |
| PCT/FR2008/051400 WO2009019401A2 (en) | 2007-07-27 | 2008-07-25 | Photovoltaic cell front face substrate and use of a substrate for a photovoltaic cell front face |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101809752A true CN101809752A (en) | 2010-08-18 |
Family
ID=39523691
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200880108903A Pending CN101809752A (en) | 2007-07-27 | 2008-07-25 | Photovoltaic cell front face substrate and use of a substrate for a photovoltaic cell front face |
| CN200880109380A Pending CN101809754A (en) | 2007-07-27 | 2008-07-25 | Photovoltaic cell front face substrate and use of a substrate for a photovoltaic cell front face |
| CN200880108912A Pending CN101809753A (en) | 2007-07-27 | 2008-07-25 | Substrate for the front face of a photovoltaic cell and use of a substrate for the front face of a photovoltaic cell |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200880109380A Pending CN101809754A (en) | 2007-07-27 | 2008-07-25 | Photovoltaic cell front face substrate and use of a substrate for a photovoltaic cell front face |
| CN200880108912A Pending CN101809753A (en) | 2007-07-27 | 2008-07-25 | Substrate for the front face of a photovoltaic cell and use of a substrate for the front face of a photovoltaic cell |
Country Status (10)
| Country | Link |
|---|---|
| US (3) | US20100096007A1 (en) |
| EP (3) | EP2183786A2 (en) |
| JP (3) | JP2010534929A (en) |
| KR (3) | KR20100051090A (en) |
| CN (3) | CN101809752A (en) |
| BR (3) | BRPI0814168A2 (en) |
| FR (2) | FR2919429B1 (en) |
| MX (3) | MX2010001043A (en) |
| WO (3) | WO2009019400A2 (en) |
| ZA (3) | ZA201000543B (en) |
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| CN103746015A (en) * | 2014-01-28 | 2014-04-23 | 张家港康得新光电材料有限公司 | Thin-film solar cell |
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- 2008-07-25 EP EP08827100A patent/EP2183786A2/en not_active Withdrawn
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- 2008-07-25 BR BRPI0814171-1A2A patent/BRPI0814171A2/en not_active IP Right Cessation
- 2008-07-25 CN CN200880108903A patent/CN101809752A/en active Pending
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- 2008-07-25 MX MX2010001044A patent/MX2010001044A/en active IP Right Grant
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- 2008-07-25 CN CN200880109380A patent/CN101809754A/en active Pending
- 2008-07-25 EP EP08827019A patent/EP2183785A2/en not_active Withdrawn
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- 2008-07-25 CN CN200880108912A patent/CN101809753A/en active Pending
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| CN102610683A (en) * | 2012-03-31 | 2012-07-25 | 浙江中控太阳能技术有限公司 | Film photovoltaics-based generation reflecting mirror |
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