CN103746015A - Thin-film solar cell - Google Patents
Thin-film solar cell Download PDFInfo
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- CN103746015A CN103746015A CN201410041952.8A CN201410041952A CN103746015A CN 103746015 A CN103746015 A CN 103746015A CN 201410041952 A CN201410041952 A CN 201410041952A CN 103746015 A CN103746015 A CN 103746015A
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- 239000010409 thin film Substances 0.000 title claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 76
- 239000002184 metal Substances 0.000 claims abstract description 76
- 239000003963 antioxidant agent Substances 0.000 claims abstract description 29
- 230000003078 antioxidant effect Effects 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 19
- 230000003287 optical effect Effects 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000010936 titanium Substances 0.000 claims abstract description 10
- 239000011701 zinc Substances 0.000 claims abstract description 8
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 5
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000011248 coating agent Substances 0.000 claims description 37
- 238000000576 coating method Methods 0.000 claims description 37
- 235000006708 antioxidants Nutrition 0.000 claims description 24
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 3
- 239000012780 transparent material Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 40
- 238000000034 method Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 114
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a thin-film solar cell, which comprises a PN junction and transparent conducting films, wherein the PN junction is located above a base material; the transparent conducting films are respectively located at both sides of the PN junction; the two layers of transparent conducting films are used as an upper electrode and a lower electrode of the solar cell; each transparent conducting film comprises a substrate and an antireflection structure attached to the substrate; each antireflection structure comprises two dielectric layers, a conducting metal layer and two antioxidant metal layers, wherein the two dielectric layers are respectively located at the upper outer side and the lower outer side; the conducting metal layer is located in the middle; the two antioxidant metal layers are respectively clamped between the conducting metal layer and the two dielectric layers, wherein the antioxidant metal layers are made of zinc or titanium. By utilizing antireflection structures, under the condition that total thickness is far smaller than the thickness of a traditional ITO (indium tin oxide) film, excellent optical property and electrical property are realized, and moreover, the flexible base material can be selected; through a reel-to-reel magnetron sputtering method, large-scale and large-area production is realized.
Description
Technical field
The present invention relates to area of solar cell, particularly relate to a kind of thin-film solar cells.
Background technology
Be accompanied by increasingly sharpening and traditional energy day by day exhausted of problem of environmental pollution, the development and utilization of new forms of energy has become human research's hot issue.Solar energy, as a kind of inexhaustible green non-pollution energy, is just becoming one of focus of new energy development utilization.The developed country just main contents using the exploitation of solar energy as energy revolution plans for a long time.
Flexible solar battery, is a kind of of thin-film solar cells, has the advantages such as light, technique is simple, and it can be applied on solar energy knapsack, the spacious paulin of solar energy, solar electric torch, solar telephone and solar powered aircraft.Refer to Fig. 1, the basic structure that Fig. 1 is existing flexible thin-film solar cell.This thin-film solar cells comprises base material 10, is positioned at the PN junction 12 on base material 10, is positioned at the film formed upper/ lower electrode 11,13 of use electrically conducting transparent that this PN saves 12 both sides, and is positioned at outermost antireflection structure 14.Sunlight sees through nesa coating and is irradiated on semiconductor PN, forms new hole-duplet, and under the effect of PN junction electric field, photohole flows to P district, and light induced electron flows to N district, after connection circuit, just forms electric current.PN junction in flexible substrate solar cell can adopt unijunction or multijunction structure.Unijunction structure is because of its poor stability, the low less employing of efficiency, and good stability, the much higher knot of efficiency, stacked solar cell, cascade solar cell are the developing direction of flexible substrate solar cell, at present the three-junction solar battery structures that adopt more.In three-junction solar battery, each battery is to be mutually formed by stacking by three semiconductor junctions: end battery absorptive red light; Intermediate cell absorbs green glow; Top battery absorbs blue light; Wide region response to sunlight spectrum is the key that improves battery efficiency.
Although yet flexible solar battery is better than traditional solar cell aspect a lot.But, the transformation efficiency of flexible solar battery only has 10% left and right at present, development is very limited, this is mainly because following 2 reasons cause: first, the surperficial transparency conducting layer meeting reflected sunlight of flexible solar battery, makes the loss of part solar energy, and current most solar panel is blue, illustrate that solar panel can not absorb the blue light part in sunlight, causes the loss of part blue light photoelectric conversion effect.The second, the resistance of nesa coating is larger, can reduce equally the transformation efficiency of solar cell.
In order to address these problems, conventionally at the upper surface of solar components, to plate one deck antireflective coating and improve transformation efficiency.Refer to Fig. 2.Figure 2 shows that light is at the reflection schematic diagram of individual layer antireflective coating.N wherein
1be the refractive index of air layer, n is the refractive index of antireflective film, n
2it is the refractive index of base material.The intensity of supposing incident ray is 1, and the reflectivity between air and film is R
1, the reflectivity between film and substrate is R
2, do not consider the absorption of material to light.Light a is that the interface primary event of incident ray process air and film forms, and its light intensity is R
1; Light b passes through air and twice refraction in interface of film and the interface primary event of film and substrate by incident ray to form, and its light intensity is (1-R
1)
2r
2; Light c is that the interface of twice refraction in interface, primary event and film and the substrate of incident ray process air and film reflects to form for twice, and its light intensity is (1-R
1)
2r
1r
2 2.
In the situation that incidence angle is very little,
If n
1=1, n=1.34; n
2=1.8, the intensity of light a is 0.021, and the intensity of light b is 0.020, and the intensity of light c is 0.0000088, and therefore, reflecting airborne light is mainly a and b, and the effect of light c can be ignored.
Obtaining antireflecting necessary condition is that amplitude equates, makes R
1=(1-R
1)
2r
2, due to R
1very little, (1-R
1)
2approach very much 1, so make R
1=R
2, by (1) formula substitution, obtain the refractive index n=(n of film
1n
2)
0.5.The requirement that the refractive index of Here it is individual layer antireflective coating need to reach.By the knowledge of electrodynamics aspect, the minimum thickness that can calculate individual layer antireflective coating need to reach the effect (wherein λ is light wavelength) that λ/4 could meet complete anti-reflection.Yet individual layer antireflection structure can only make the reverberation of certain wavelength reach minimum, in order to realize anti-reflection in larger scope, people often utilize double-layer reflection reducing coating to improve visible light transmissivity.So, further increased again the thickness of whole nesa coating.In addition, in order to improve transformation efficiency, also need to reduce the resistance of conductive film, the resistance of ito thin film is 100-150 Ω/ at present, if continue to reduce resistance, need to increase preparation time and consume more raw material, increases cost.
A lot of companies conduct in-depth research and report the saturating low-resistance nesa coating of height, as the used for solar batteries antireflective coating (number of patent application: 201210219852.0), it adopts TiO of Suzhou this equipment Co., Ltd design of the good speech energy
2-xas material, the electromagnetic wave average reflectance of 300-900nm is reduced to 2.5-3.5%, but its thickness is larger, between 100-200nm.The optics antireflection structure of Shinmaywa Ind Ltd's design, its structure is SiO/SiO/ZrO
2+ TiO
2/ SiO
2/ TiO
2/ SiO
2, in visible-range internal reflection rate, lower than 1%, there is outstanding anti-reflective effect, but the number of plies is too complicated, is unfavorable for large-scale production (number of patent application: 2003156715.0).The aluminum oxynitride rete single layer optical antireflection structure (number of patent application: 200920178394.4) of Himin Solar Energy Group Co., Ltd.'s design, although preparation technology is simple, adopting double-deck transmission film is only also that transmittance increases by 4.5%, and film surface is coarse, is unfavorable for extensive use.The Yi Ge seminar of Shanghai Communications University has proposed dielectric layer/metal level/dielectric layer three-decker, thickness is below 100nm, and there is good conductivity and permeability, yet, because metal level is easy to oxidized, useful life is not high, also has very large problem (number of patent application: 03116461.7) in actual production with in using.
To sum up, need badly develop a kind of novel antireflective type nesa coating for flexible solar battery to replace ito thin film, it need to have higher anti-reflection and lower resistivity on the one hand, and cost reduces as far as possible on the other hand, makes large area industrialization become possibility.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of new thin-film solar cells, this thin-film solar cells is provided with a kind of nesa coating that integrates high anti-reflection and high conductivity, without extra antireflective coating, just can make light there is good transmissivity, greatly improve the photoelectric conversion effect of solar cell.This nesa coating also has thin thickness, feature easy to use simultaneously, has reduced the cost of manufacture of thin-film solar cells.
A kind of thin-film solar cells proposing according to the present invention, comprise the PN junction that is positioned at base material top, and the nesa coating that is positioned at these PN junction both sides, this two-layer nesa coating is as the upper/lower electrode of described solar cell, described nesa coating comprises substrate and is attached to the antireflection structure on this substrate, described antireflection structure comprise the two layer medium layer in upper and lower outside, middle conductive metal layer and be clipped in respectively conductive metal layer and two layer medium layer between two-layer anti-oxidant metal layer, wherein said anti-oxidant metal layer is zinc or titanium.
Preferably, the total optical thickness of described two layer medium layer is 1 optical unit, and the optical thickness of this two layer medium layer be take middle conductive metal layer as mirror image symmetry.
Preferably, the thickness of described conductive metal layer is less than 10nm, and the thickness of anti-oxidant metal layer is between 1-10nm, and this two-layer anti-oxidant metal layer be take middle conductive metal layer as mirror image symmetry.
Preferably, the refractive index of described two-layer high refractive index medium layer is greater than respectively 2.
Preferably, described conductive metal layer is gold or silver-colored.
Preferably, the square resistance of described antireflection structure is less than 10 Ω/.
Preferably, the material of described dielectric layer is TiO
x, NbO
x, ZrO
x, ZnO
x, CeO
x, TaO
x, a kind of in ZnSe or ZnS.
Preferably, described substrate is flexible and transparent material.
Compared with prior art, the present invention has following technical advantage:
1, thin-film solar cells of the present invention, the total physical thickness of nesa coating using is only tens nanometer left and right, than traditional regular film system, reduced an order of magnitude, the one side reflectivity of the novel antireflection structure preparing in visible-range, lower than 2-3%, has outstanding permeability.
2, except having outstanding anti-reflective effect, add the square resistance of nesa coating after anti-oxidant metal layer below 10 Ω/, there is outstanding electric conductivity.
3, by having added anti-oxidant metal layer, traditional sandwich structure nesa coating is optimized to design, reduced on the one hand the square resistance of antireflective coating, oxidized to preventing conductive metal layer on the other hand, improve and play important effect useful life.
4, the substrate of this nesa coating can disposablely carry out novel antireflection structure by winding magnetic control sputtering technology, greatly reduces production cost.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is a kind of existing film solar battery structure.
Figure 2 shows that the reflection schematic diagram of light on monofilm.
Fig. 3 is the antireflection structure schematic diagram in embodiment of the present invention.
Fig. 4 is that the thickness of intermediate metal layer is from the reflectivity curve family of the optics antireflection structure of 6-10nm variation.
Fig. 5 is the general structure schematic diagram of this nesa coating.
Fig. 6 is the reflectivity comparison diagram of nesa coating of the present invention and existing ito thin film.
Fig. 7 is the module diagram of the film formed thin-film solar cells of application electrically conducting transparent of the present invention.
Embodiment
As described in the background art, existing thin-film solar cells, be limited to the inferior position of ito thin film itself, there is the problem that electricity conversion is low, in order to improve this problem, have to improve by the thickness that increases extra antireflective coating and increase conductive layer, but can further increase the integral thickness of thin-film solar cells, make cost improve simultaneously.
The saturating low resistance multi-layer film structure of current height is generally this so-called sandwich structure of metal oxide/conductive layer/metal oxide, with regard to what embodied in the patent that is 03116461.7 as number of patent application, yet, this structure mainly contains 2 inferior positions, first, conductive layer first can not be too thick, otherwise can produce bad impact to permeability, yet, too thin conductive metal layer (as following in 10nm) is easy to form island structure but not continuous film, and this will cause the electric conductivity of conductive metal layer to decline; The second, conductive layer is generally selected metal A g, and oxygen atom and the oxygen atom in external environment in metal oxide are easily oxidized Ag layer, reduces the conductivity of Ag layer.In order to address these problems; the anti-oxidant metal layer that we select one deck and oxygen to be easier to react; this anti-oxidant metal layer is incorporated in sandwich structure; can fill on the one hand near space island structure in Ag layer; obtain higher conductivity, on the other hand, the oxygen atom in metal oxide reacts with this anti-oxidant metal layer; form fine and close oxide-film, the conductive metal layer of innermost layer is played to splendid protective effect.And formed metallic bond also plays important effect for improving the adhesive force of metal oxide and anti-oxidant metal layer.We select Zn and these two kinds of metals of Ti as anti-oxidant metal layer; this is comparatively active due to Zn and Ti, be easy to oxidation and generate fine and close oxide-film, and the performance of oxide-film is highly stable; chemical property is also very stable, can effectively protect the conductive metal layer of innermost layer.
Therefore, the present invention be take traditional sucrose layer/metal level/dielectric layer sandwich structure as basis, by introducing one deck anti-oxidant metal layer, a kind of nesa coating of five-layer structure has been proposed, by it for field of thin film solar cells, this nesa coating is provided with the antireflection structure that simultaneously possesses conduction and anti-reflection effect in flexible transparent substrate, this antireflection structure comprises dielectric layer-anti-oxidant metal layer-conductive metal layer-anti-oxidant metal layer-dielectric layer, and the grade of gross thickness in tens nanometers, compare with existing nesa coating, it is simple that the present invention has film structure, thin thickness, and do not need to carry out annealing in process and the advantages such as preliminary treatment to base material.The resistivity of this nesa coating is far smaller than the resistivity of ITO simultaneously, has improved the being quick on the draw property of thin-film solar cells.Owing to having added anti-oxidant metal layer, greatly improved conductivity and the non-oxidizability of antireflective coating, the useful life of having improved antireflective coating.
Refer to Fig. 3, this antireflection structure comprise the two layer medium layer 111 and 115 in upper and lower outside, middle conductive metal layer 113 and be clipped in respectively conductive metal layer and two layer medium layer between two-layer anti-oxidant metal layer 112 and 114.Wherein the thickness of conductive metal layer 113 is less than 10nm, and its material is considered electric property, is preferably gold or silver. Anti-oxidant metal layer 112 and 114 can " be caught " oxonium ion in dielectric layer 111 and 115 on the one hand, make dielectric layer be oxygen debt state, and then form so-called tunneling effect and improve conductivity, can prevent that conductive metal layer was lost efficacy by the oxidation of the external world and medium of oxides layer on the one hand, when conductive metal layer occurs gap because thickness is too small, fill, thereby increase electric conductivity simultaneously.Its thickness, between 1-10nm, is preferably zinc or titanium.The impact of the thickness of considering deielectric-coating on light anti-reflection effect, the total optical thickness that we get two layer medium film 111 and 115 is 1 optical unit.In the present invention, in order effectively to reduce the general thickness of five-layer structure, we get refractive index and surpass 2 high refractive index medium material as the material of this two layer medium layer 111 and 115.Such as TiO
x, NbO
x, ZrO
x, ZnO
x, CeO
x, TaO
x, ZnSe, ZnS etc.So, in the situation that meet the total optical thickness of two layer medium layer, be the i.e. optical unit of λ/4(), the physical thickness of every layer of dielectric layer can be low as much as possible.With TiO
2for example, its refractive index n=2.32, when incident light wavelength is 550nm, according to the known (refractive index that wherein n is dielectric layer in computing formula nd=λ/4 of optical thickness, d is the physical thickness of dielectric layer, and λ/4 are an optical unit), the thickness of single-layer medium layer is about 27nm, now the general thickness of this antireflection structure can be controlled at 70nm left and right, well below the thickness of existing other antireflective films.It is to be noted, for two layer medium layer 111,115 and two-layer anti-oxidant metal layer 112,114, can select respectively identical material, also can be different materials, but the optical thickness of two layer medium layer, and the physical thickness of two-layer anti-oxidant metal layer all be take middle conductive metal layer as mirror image symmetry.
Please again referring to Fig. 4, Fig. 4 is that the thickness of middle conductive metal layer is from the reflectivity curve family of the optics antireflection structure of 6-10nm variation, wherein curve 1 represents that the thickness of intermediate metal layer is 6nm, curve 2 represents that the thickness of intermediate metal layer is 7nm, curve 3 represents that the thickness of intermediate metal layer is 8nm, curve 4 represents that the thickness of intermediate metal layer is 9nm, and curve 5 represents that the thickness of intermediate metal layer is 10nm.As can be seen from the figure, in most cases, antireflection structure of the present invention all presents lower reflection characteristic at whole visible light wave range.Wherein, when the thickness of metal level is during at 6nm, effect is best, shows W type reflectance curve.
Antireflection structure based on above-mentioned, the present invention proposes a kind of nesa coating can be applicable in thin-film solar cells.Refer to Fig. 5, Fig. 5 is the general structure schematic diagram of this nesa coating, and this nesa coating comprises substrate 2, is attached to the antireflection structure 1 of these substrate 2 one sides.This substrate 2 is preferably flexible clear materials, be specifically as follows PETG (PET) etc., select flexible parent metal, by the method for volume to volume magnetron sputtering, can large-scale production go out to have the antireflective coating of excellent photoelectric properties, it can be applied to replace traditional ITO nesa coating in thin-film solar cells, there is great development potentiality.
Refer to Fig. 6, Fig. 6 is the reflectivity comparison diagram of nesa coating of the present invention and existing ito thin film.Wherein curve 1 is the reflectivity of existing ITO film, and curve 2 is nesa coating (PET/NbO of the present invention
x/ Ti/Ag/Ti/NbO
x/ Air) reflectivity, total physical thickness of its five layers of U-shaped structure antireflective coatings is 65nm left and right.As can be seen from the figure at 400-700nm visible light wave range, in different wave length, antireflective film reflectivity major part of the present invention is below 2-3%, and reflectivity curve is W type, has outstanding anti-reflective effect.
Following table is the thickness of different anti-oxidant metal layers for a change, square resistance after half an hour of the reflectivity of five layers of designed antireflection structure, square resistance, poach and the adhesive force experimental result of poach after half an hour.Wherein table one is Metal Zn, and table two is metal Ti.Can find out, thickness at two kinds of anti-oxidant metal layers is between 1-10nm, reflectivity is always below 4%, there is outstanding reflection preventing ability, have lower square resistance, all, below 10 Ω/, the halfhour weatherability test of poach also shows that too large variation does not occur square resistance simultaneously, adhesive force is good, has good weatherability.Estimable, than the anti-reflection film product on market, film structure is simple, and thickness very thin (only an optical thickness left and right), has very large industrialization advantage.
Table one. the photoelectric properties of the antireflection structure of different anti-oxidation metal layer thicknesses and weatherability test structure (Zn)
Table two. the photoelectric properties of the antireflection structure of different anti-oxidation metal layer thicknesses and weatherability test structure (Ti)
Refer to Fig. 7, Fig. 7 is the module diagram of the film formed thin-film solar cells of application electrically conducting transparent of the present invention.As shown in the figure, this thin-film solar cells comprises the PN junction 102 being positioned on base material 100, and the nesa coating as shown in Figure 7 101,103 that is positioned at these PN junction 102 both sides.Nesa coating 101,103 upper/lower electrodes as this solar cell wherein.In the present invention, because nesa coating 101,103 itself has light enhancing effect concurrently, therefore saved and be originally positioned at surperficial bright enhancement film.The thickness of this two-layer nesa coating self only has tens nanometers in addition, is far smaller than the thickness of existing ITO film, and electrically conducting transparent film thickness of the present invention is further reduced.And two-layer nesa coating optical property and electric property are all better than existing ITO film, in thickness reduction, promoted the light utilization of solar cell and reduced loss, electricity conversion is improved.
In sum, nesa coating of the present invention, on the basis of original dielectric layer/metal level/dielectric layer sandwich structure, by introducing one deck anti-oxidant metal layer, in the situation that general thickness is far smaller than existing ITO film, realizes excellent optical property and electric property, and can select flexible parent metal, by the method for volume to volume magnetron sputtering, realize extensive, large area production.In addition, use the film formed thin-film solar cells of electrically conducting transparent of the present invention, can, in thickness reduction, promote light utilization and production capacity efficiency.
Above-mentioned explanation to the disclosed embodiments, makes professional and technical personnel in the field can realize or use the present invention.To the multiple modification of these embodiment, will be apparent for those skilled in the art, General Principle as defined herein can, in the situation that not departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention will can not be restricted to embodiment illustrated herein, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (8)
1. a thin-film solar cells, it is characterized in that: comprise the PN junction that is positioned at base material top, and the nesa coating that is positioned at these PN junction both sides, this two-layer nesa coating is as the upper/lower electrode of described solar cell, described nesa coating comprises substrate and is attached to the antireflection structure on this substrate, described antireflection structure comprise the two layer medium layer in upper and lower outside, middle conductive metal layer and be clipped in respectively conductive metal layer and two layer medium layer between two-layer anti-oxidant metal layer, wherein said anti-oxidant metal layer is zinc or titanium.
2. thin-film solar cells as claimed in claim 1, is characterized in that: the total optical thickness of described two layer medium layer is 1 optical unit, and the optical thickness of this two layer medium layer be take middle conductive metal layer as mirror image symmetry.
3. thin-film solar cells as claimed in claim 1, is characterized in that: the thickness of described conductive metal layer is less than 10nm, and the thickness of anti-oxidant metal layer is between 1-10nm, and this two-layer anti-oxidant metal layer be take middle conductive metal layer as mirror image symmetry.
4. thin-film solar cells as claimed in claim 1, is characterized in that: the refractive index of described two-layer high refractive index medium layer is greater than respectively 2.
5. thin-film solar cells as claimed in claim 1, is characterized in that: described conductive metal layer is gold or silver-colored.
6. thin-film solar cells as claimed in claim 1, is characterized in that: the square resistance of described antireflection structure is less than 10 Ω/.
7. thin-film solar cells as claimed in claim 1, is characterized in that: the material of described dielectric layer is TiO
x, NbO
x, ZrO
x, ZnO
x, CeO
x, TaO
x, a kind of in ZnSe or ZnS.
8. thin-film solar cells as claimed in claim 1, is characterized in that: described substrate is flexible and transparent material.
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|---|---|---|---|---|
| CN101809752A (en) * | 2007-07-27 | 2010-08-18 | 法国圣戈班玻璃厂 | Photovoltaic cell front face substrate and use of a substrate for a photovoltaic cell front face |
| US20100232024A1 (en) * | 2006-06-09 | 2010-09-16 | Dai Nippon Toryo Co., Ltd | Composition for transparent electroconductive film formation, transparent electroconductive film, and display |
| CN103162452A (en) * | 2013-03-05 | 2013-06-19 | 日出东方太阳能股份有限公司 | Inoxidizability solar spectrum selective absorbing coating and preparation method thereof |
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|---|---|---|---|---|
| US20100232024A1 (en) * | 2006-06-09 | 2010-09-16 | Dai Nippon Toryo Co., Ltd | Composition for transparent electroconductive film formation, transparent electroconductive film, and display |
| CN101809752A (en) * | 2007-07-27 | 2010-08-18 | 法国圣戈班玻璃厂 | Photovoltaic cell front face substrate and use of a substrate for a photovoltaic cell front face |
| CN103162452A (en) * | 2013-03-05 | 2013-06-19 | 日出东方太阳能股份有限公司 | Inoxidizability solar spectrum selective absorbing coating and preparation method thereof |
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