JPS63110507A - Transparent conductor - Google Patents
Transparent conductorInfo
- Publication number
- JPS63110507A JPS63110507A JP25536786A JP25536786A JPS63110507A JP S63110507 A JPS63110507 A JP S63110507A JP 25536786 A JP25536786 A JP 25536786A JP 25536786 A JP25536786 A JP 25536786A JP S63110507 A JPS63110507 A JP S63110507A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- metal oxide
- transparent
- thin film
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 title claims description 15
- 229910044991 metal oxide Inorganic materials 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 150000004706 metal oxides Chemical class 0.000 claims description 22
- 239000010409 thin film Substances 0.000 claims description 19
- 229910052976 metal sulfide Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 34
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 17
- 239000010408 film Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000002834 transmittance Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000004417 polycarbonate Substances 0.000 description 4
- 229920000515 polycarbonate Polymers 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- BLBNEWYCYZMDEK-UHFFFAOYSA-N $l^{1}-indiganyloxyindium Chemical compound [In]O[In] BLBNEWYCYZMDEK-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000032900 absorption of visible light Effects 0.000 description 1
- 239000002216 antistatic agent Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は透明導電体、特に電気抵抗が低く、可視光透過
率が高い透明導電体に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a transparent conductor, particularly a transparent conductor having low electrical resistance and high visible light transmittance.
透明導電体は液晶ディスプレー用電極、電場発光体用電
極、帯電防止体、防曇用発熱体などに広く利用されてい
る。Transparent conductors are widely used in electrodes for liquid crystal displays, electrodes for electroluminescent materials, antistatic materials, heating elements for antifogging, and the like.
透明導電体としては従来よりＩｎ２Ｏ３＋ ＳｎＯ２及
びＳｎＯ２をドープした酸化インジウム等め金属酸化物
半導体薄膜、あるいは金、銀、銅等の金属薄膜を透明基
体に付着したものが用いられている。As transparent conductors, thin films of metal oxide semiconductors such as indium oxide doped with In2O3+ SnO2 and SnO2, or thin films of metals such as gold, silver, copper, etc., adhered to transparent substrates have been conventionally used.
また、前記金属酸化物半導体薄膜、あるいは金、銀、銅
等の金属薄膜と高屈折率物質からなる薄膜とを積層した
薄膜を透明基体に付着して、可視域での光透過率を高め
た透明導電体も知られている。In addition, the above-mentioned metal oxide semiconductor thin film, or a thin film in which a metal thin film such as gold, silver, copper, etc. and a thin film made of a high refractive index substance are laminated is attached to a transparent substrate to increase light transmittance in the visible range. Transparent conductors are also known.
し発明が解決しようとする間層点〕
金属酸化物半導体薄膜は面積抵抗が小なものでも数十ｎ
ｍの膜厚では２５Ω／口であり、実用的には数百ｎｍ以
上の膜厚を必要とし、膜厚を厚くすると可視光透過率が
小になったり、光学的干渉により、外観上見苦しくなり
、特にディスプレー用電極として欠点となる。[The interlayer point that the invention attempts to solve] Metal oxide semiconductor thin films have a resistance of several tens of nanometers even if their sheet resistance is small.
For a film thickness of m, the resistance is 25Ω/hole, and practically a film thickness of several hundred nanometers or more is required.If the film thickness is increased, the visible light transmittance will decrease and the appearance will become unsightly due to optical interference. This is a drawback, especially as an electrode for displays.
これに対し、金属薄膜は数十ｎｍ程度の膜厚で１０Ω／
口以下の面積抵抗が得られる。しかしながら金属薄膜の
みでは耐摩粍性など機械的性質が著しく劣り、耐候性に
欠ける等の欠点があり、さらに一般的に可視域の反射率
が高い欠点があった。On the other hand, a metal thin film has a thickness of about several tens of nanometers and has a resistance of 10Ω/
A sheet resistance of less than 100 liters can be obtained. However, metal thin films alone have drawbacks such as significantly inferior mechanical properties such as abrasion resistance, lack of weather resistance, and generally have a high reflectance in the visible region.
金属薄膜と高屈折率物質からなる薄膜とを積層した薄膜
は可視光域の反射率を抑えることができるが高屈折率層
を保護膜として金属薄膜上に設けるため、高屈折率の保
護膜は電気絶縁性であるため金属薄膜の低抵抗性が生じ
ず、全体として高い面積抵抗を示す。A thin film made by laminating a thin metal film and a thin film made of a high refractive index material can suppress the reflectance in the visible light range, but since the high refractive index layer is provided on the metal thin film as a protective film, the high refractive index protective film is Since it is electrically insulating, it does not have the low resistance of a metal thin film, and exhibits a high sheet resistance as a whole.
本発明はこれらの欠点を改養するためになされたもので
あって、低電気抵抗の可視光透過率が高い透明導電体を
提供するものである。The present invention has been made to remedy these drawbacks, and provides a transparent conductor with low electrical resistance and high visible light transmittance.
すなわち、本発明は透明体と、該透明体の表面に付着し
た金属酸化物、あるいは金属硫化物からなる薄膜と、該
薄膜上に付着した金属あるいは合金からなる金属層と、
該金属層上に付着した金属酸化物からなる高屈折率層と
からなる透明導電体において、前記金属酸化物からなる
高屈折率層がＩｎ２Ｏ３，ＳｎＯ２．ＺｎＯ，ＯｄＯ＋
５ｔ）２０３＋またはＳｎＯ２をドープしたＩｎ２Ｏ３
の少なくとも１つを主成分とした金属酸化物であること
を特徴とする透明導電体である。That is, the present invention provides a transparent body, a thin film made of a metal oxide or metal sulfide attached to the surface of the transparent body, a metal layer made of a metal or an alloy attached on the thin film,
In a transparent conductor comprising a high refractive index layer made of a metal oxide deposited on the metal layer, the high refractive index layer made of the metal oxide is In2O3, SnO2. ZnO, OdO+
5t) In2O3 doped with 203+ or SnO2
A transparent conductor characterized by being a metal oxide containing at least one of the following as a main component.
本発明において、透明体の表面に付着させる金属酸化物
、あるいは金属硫化物としてＴｌＯ２＋Ｔ ａ ２０５
ｒ Ｚ ｎＯ＋ Ｉ ｎ ２０３ 、Ｂ １２０３あ
るいはＺｎＳ等の高屈折率の物質が用いられる。In the present invention, TlO2+T a 205 is used as the metal oxide or metal sulfide to be attached to the surface of the transparent body.
A high refractive index material such as r Z nO+ I n 203 , B 1203 or ZnS is used.
また本発明に用いられる金属層はＡｕｔＡｇ＋Ｇｕ＋Ａ
Ｊ、Ｐ（１，およびＲｈの少なくとも１種を主成分とす
るものを用いることができ、特に電気抵抗が低く、且つ
可視光の吸収の高いＡｕ ｔ Ａｇ ｒ及びＣｕの少な
くとも／ｍが好ましい。この金属層は通常数ｎｍ乃至７
０ ｎｍ程度の厚みのものが用いられる。Further, the metal layer used in the present invention is AutAg+Gu+A
A material containing at least one of J, P(1, and Rh as a main component) can be used, and at least /m of Au t Ag r and Cu, which have low electrical resistance and high absorption of visible light, is particularly preferred. This metal layer is usually several nm to 7 nm thick.
A material having a thickness of about 0 nm is used.
更にまた、本発明の金属層上に付着される金属酸化物か
らなる高屈折率層は導電性ターゲットを用いた直流スパ
ッタリング法により形成され、低い面積抵抗と可視光透
過率の高いＩｎ２Ｏ＋ＳｎＯ２ 。Furthermore, the high refractive index layer made of a metal oxide deposited on the metal layer of the present invention is formed by a DC sputtering method using a conductive target, and is made of In2O+SnO2, which has a low sheet resistance and high visible light transmittance.
ＺｎＯ＋Ｃｄ０ｙＳｂ２０３１またはＳｎＯ２をドープ
したＩｎ２Ｏ３の少なくとも１種が用いられる。またこ
の両屈折率層は前記金属酸化物の複数層の組合せを用い
てもよい。At least one of ZnO+Cd0ySb2031 or In2O3 doped with SnO2 is used. Further, this double refractive index layer may be a combination of multiple layers of the metal oxides.
更にまた、本発明における透明体としてはソーダライム
ガラスの如きガラス基板、ポリカーボネートの如きプラ
スチック基板等が用いられる。Furthermore, as the transparent body in the present invention, a glass substrate such as soda lime glass, a plastic substrate such as polycarbonate, etc. are used.
本発明は金属酸化物あるいは金属硫化物からなる薄膜と
金属層と、Ｉ ｎ ２０３ ＋ ＳｎＯ２＋ ＺｎＯ、
Ｃｄｏ ＋ Ｓ ｂ ２０３またはＳｎＯ２をドープし
たＩｎ２Ｏ３の少なくとも１つを主成分とする金属酸化
物層とからなる透明導電膜を用いるものであるから面積
抵抗が低く、且つ可視光反射率を低くすることができる
。The present invention comprises a thin film and a metal layer made of metal oxide or metal sulfide, In 203 + SnO2+ ZnO,
Since it uses a transparent conductive film consisting of a metal oxide layer mainly composed of at least one of Cdo + S b 203 or In2O3 doped with SnO2, it has a low sheet resistance and a low visible light reflectance. Can be done.
以下、本発明を図面を引用して詳述する。 Hereinafter, the present invention will be explained in detail with reference to the drawings.
実施例／
第７図は本発明方法を実施するスパッタリング装置の概
略図であり、スパッタリング装置はアースされた真空槽
（１）の一部にバリアプルバルブ（２）を設けた排気口
（３）を形成し、この排気口（３）を介して図示しない
真空ポンプと接続し、真空槽（１）内を減圧するように
している。また真空槽（１）の底部には電気絶縁体（４
） 、 （４）を介してマグネトロンカソード（５１、
（６）を離間して一対設け、これらマグネトロンカソー
ド（５） 、 （６）と直流電源（７） 、 （７）と
をスイッチ（８）。Embodiment/ Fig. 7 is a schematic diagram of a sputtering apparatus for carrying out the method of the present invention. is connected to a vacuum pump (not shown) through this exhaust port (3) to reduce the pressure inside the vacuum chamber (1). In addition, there is an electrical insulator (4) at the bottom of the vacuum chamber (1).
), (4) through the magnetron cathode (51,
A pair of magnetron cathodes (6) are provided at a distance, and a switch (8) connects these magnetron cathodes (5), (6) and DC power supplies (7), (7).
（８）を介して接続している。また各マグネトロンカソ
ード（５） 、 （６）の近傍には真空槽（１）の底部
を貫通してパルプ（９１、（９）を備えたガス供給管（
１０） 、 （１１）を臨ませ、ガス供給管（１０）か
らは真空槽（１）内にアルゴンガス等の不活性ガスを、
ガス供給管（１１）からは真空槽（１）内に酸素ガスを
供給するようにしている。(8). In addition, near each magnetron cathode (5), (6), there is a gas supply pipe (91, (9)) that penetrates the bottom of the vacuum chamber (1) and is equipped with pulp (91, (9)).
10) and (11), and supply inert gas such as argon gas into the vacuum chamber (1) from the gas supply pipe (10).
Oxygen gas is supplied into the vacuum chamber (1) from the gas supply pipe (11).
更に真空槽（１）内の各カソード（５） 、 （６）上
方には往復動可能な搬送ベル） （１２）を配置してい
る。Further, a reciprocating transport bell (12) is arranged above each cathode (5), (6) in the vacuum chamber (1).
以上の如き構成のスパッタリング装置を用いて熱線反射
膜を形成する方法を以下に述べる。A method of forming a heat ray reflective film using the sputtering apparatus configured as above will be described below.
先ず、カソード（５）の上面にＡｇをターゲット（１３
）として取付け、カソード（６）の上面にＡＪ２０３を
Ｊ ｍｏｌ！％含むＺｎＯをターゲット（１４）として
取付け、またホルダー（１５）にガラス板（１６）を保
持し、このホルダー（１５）を搬送ベル） （１２）上
に載置する。First, a target (13) of Ag is placed on the top surface of the cathode (5).
), and put AJ203 on the top of the cathode (6) as J mol! % ZnO is attached as a target (14), a glass plate (16) is held in a holder (15), and this holder (15) is placed on a conveyor bell (12).
面ル後、バリアプルバルブ（２）を開とし真空槽（１）
内を１Ｏ−３Ｐａまで減圧し、ガス供給管（１１）より
アルゴンガスと酸素ガスを供給する。After leveling, open the barrier pull valve (2) and open the vacuum chamber (1).
The inside pressure is reduced to 10-3 Pa, and argon gas and oxygen gas are supplied from the gas supply pipe (11).
尚、混合比はアルゴンガスを９層体積％、酸素ガスを！
体積％として酸素分圧を低くシ、且つガス導入後の真空
槽（１）がＯ，ＩＩｐａ となるようにする。In addition, the mixing ratio is 9 layer volume % of argon gas and oxygen gas!
The oxygen partial pressure in terms of volume % is kept low, and the vacuum chamber (1) after gas introduction is made to have a pressure of O.IIpa.
そしてスイッチ（Ｓ）をオンとしカソード（６）にＪ
ｊ□Ｖの負電圧を印加し、７０分間スパッタリングを行
った後、搬送ベル） （１２）を走行させることで、ホ
ルダー（１５）に保持したガラス板（１６）を３ Ｑ
Ｑｔｒａｓ１分の速度でカソード（６）上を移動させる
ことで、第２図に示すように、ガラス板（１６）の表面
に所定厚み（／（７層ｍ 〜ｇＯｎｍ）の金属酸化物層
（１７）、具体的にはＺｎ０−Ａｊ！２０３ からなる
第１層を形成する。Then turn on the switch (S) and connect the cathode (6) to J.
After applying a negative voltage of j□V and performing sputtering for 70 minutes, the glass plate (16) held in the holder (15) is moved by moving the conveyor bell (12) for 3Q.
By moving the cathode (6) at a speed of Qtras 1 minute, a metal oxide layer (17 ), specifically, a first layer consisting of Zn0-Aj!203 is formed.
そして、スイッチ（８）をオフとし、ノくルブ（９）を
閉じた後、バリアプルバルブ（２）を再び開とし、真空
槽（１）内を／ ０−３Ｐａ ％まで減圧する。Then, after turning off the switch (8) and closing the knob (9), the barrier pull valve (2) is opened again to reduce the pressure in the vacuum chamber (1) to /0-3 Pa%.
この後、ガス供給管（１ｏ）のバルブ（９）を開き、ア
ルゴンガスを１１００５ＣＯで真空槽（１）内に導入し
、バリアプルバルブ（２）を調整して真空槽（１）をｏ
、＜ｚ ｐａに保ち、カソード（５）のスイッチ（８
）をオンとしカソード（５）に３００■の負電圧を印加
し、約１０分間直流スパッタリングを行う。この後搬送
ベルｌ−（１２）を走行させることで、ホルダ（１５）
に保持したガラス板（１６）を／ ／ ００ｔｔｒｍ／
分の速度でカソード（５）上を移動させることで、第２
図に示すように、金属酸化物層（１７）の表面に所定厚
みＨｎｍ〜３０ｎｍ）の貴金属層（１８）、具体的には
Ａｇからなる第２Ｎを形成する。After this, open the valve (9) of the gas supply pipe (1o), introduce argon gas with 11005CO into the vacuum chamber (1), and adjust the barrier pull valve (2) to open the vacuum chamber (1).
,<z pa, switch (8) of cathode (5)
) is turned on, a negative voltage of 300 cm is applied to the cathode (5), and DC sputtering is performed for about 10 minutes. After this, by running the conveyor bell l-(12), the holder (15)
The glass plate (16) held at / / 00ttrm/
The second
As shown in the figure, a noble metal layer (18) having a predetermined thickness of H nm to 30 nm, specifically a second N made of Ag, is formed on the surface of the metal oxide layer (17).
次に第１層の金属酸化物層（１７）を形成したと同様に
金属層（１８）上にＺｎ０−ＡＪ２０３からなる金属酸
化物層の第３を形成した。Next, a third metal oxide layer made of Zn0-AJ203 was formed on the metal layer (18) in the same manner as the first metal oxide layer (17).
実施例２
実施例／と同様の装置を用い、カソード（５）の上面に
Ａｇをターゲラ） （１３）として取付け、カソード（
６）の上面に９層ｗｔ％Ｉｎ２Ｏ３−！； ｗｔ％Ｓｎ
Ｏ２をターゲット（１４）として取付け、またホルダー
（１５） Ｋガラス板（１６）を保持し、このホルダー
（１５）を搬送ベル） （１２）上に載置する。Example 2 Using a device similar to Example 2, Ag was attached as target layer (13) on the upper surface of the cathode (5), and the cathode (
6) 9 layers wt% In2O3- on the top surface! ;wt%Sn
O2 is attached as a target (14), and a holder (15) holds the K glass plate (16), and this holder (15) is placed on the conveyor bell (12).
しかる後、実施例１に述べたと同様の方法で金属酸化物
層（１７）−金属層（１８）−金属酸化物層（１９）、
具体的には、Ｉｎ２Ｏ３−ＳｎＯ２（１７） Ａｇ（１
Ｂ）−Ｉｎ２０３−３ｎ０２（１９）の３層からなる透
明導電膜をガラス基板上に形成した。Thereafter, in the same manner as described in Example 1, metal oxide layer (17) - metal layer (18) - metal oxide layer (19),
Specifically, In2O3-SnO2(17) Ag(1
B) A transparent conductive film consisting of three layers of -In203-3n02 (19) was formed on a glass substrate.
実施例３
実施例２に用いたと同様の装置、同様のターゲットを用
いて、ポリカーボネート基板上に透明導電膜を形成した
。すなわち、ホルダー（１５） Ｋポリカーボネート基
板（１６）を保持し、このホルダー（１５）を搬送ベル
） （１２）上に載置し、しかる後、実施例λと同様の
方法で金属酸化物層（１７）−金属層（１Ｂ）−金属酸
化物層（１９） 、具体的には、Ｉｎ２Ｏ３−３ｎ０２
（１７） −Ａｇ（１８） −Ｉｎ２Ｏ３−５ｎ○２
（１９）の３層からなる透明導電膜をポリカーボネート
基板上に形成した。Example 3 A transparent conductive film was formed on a polycarbonate substrate using the same apparatus and the same target as used in Example 2. That is, the holder (15) holds the K polycarbonate substrate (16), the holder (15) is placed on the conveyor bell (12), and then the metal oxide layer ( 17) - Metal layer (1B) - Metal oxide layer (19), specifically, In2O3-3n02
(17) -Ag(18) -In2O3-5n○2
A transparent conductive film consisting of three layers (19) was formed on a polycarbonate substrate.
以上、実施例１乃至実施例３で得られた試料について、
面積抵抗と可視光透過率を測定し第１表に示した。As mentioned above, regarding the samples obtained in Examples 1 to 3,
The sheet resistance and visible light transmittance were measured and shown in Table 1.
更に第２層のＡｇ層は実施例と同様に形成し、第１層と
第３Ｎについては両層とも反応性直流スパッタ法及び浸
漬法で形成したものを夫々比較例／及び比較例コとして
示した。Furthermore, the second Ag layer was formed in the same manner as in the example, and the first and third N layers were both formed by the reactive DC sputtering method and the dipping method, respectively, as Comparative Examples/and Comparative Examples. Ta.
第１表から明らかなように、本発明に係る透明導電体は
従来のものに比較して面積抵抗が小さく、しかも可視光
透過率が従来のものと同等あるいはそれ以上である。As is clear from Table 1, the transparent conductor according to the present invention has a smaller sheet resistance than the conventional conductor, and a visible light transmittance equal to or higher than that of the conventional conductor.
第１図は本発明に用いた装置の概略断面図、第２図は本
発明方法によって製造した透明導電膜の拡大断面図であ
る。
尚、図面中（１）は真空槽、（５１、（６）はマグネト
ロンカソード、（１０） 、 （１１）はガス供給管、
（１２）は搬送ベルト、（１３Ｌ（１４）はターゲット
、（１５）はホルダー、（１６）は基板、（１７）、（
１９）は高屈折率層、（１８）は金属層である。
特許出願人 日本板硝子株式会社
第１図
第２ 図、FIG. 1 is a schematic sectional view of an apparatus used in the present invention, and FIG. 2 is an enlarged sectional view of a transparent conductive film produced by the method of the present invention. In the drawing, (1) is a vacuum chamber, (51, (6) are magnetron cathodes, (10) and (11) are gas supply pipes,
(12) is a conveyor belt, (13L (14) is a target, (15) is a holder, (16) is a substrate, (17), (
19) is a high refractive index layer, and (18) is a metal layer. Patent applicant Nippon Sheet Glass Co., Ltd. Figure 1 Figure 2
Claims (2)
、あるいは金属硫化物からなる薄膜と、該薄膜上に付着
した金属あるいは合金からなる金属層と、該金属層上に
付着した金属酸化物からなる高屈折率層とからなる透明
導電体において、前記金属酸化物からなる高屈折率層が
Ｉｎ＿２Ｏ＿３、ＳｎＯ＿２、ＺｎＯ、ＣｄＯ、Ｓｂ＿
２Ｏ＿３、またはＳｎＯ＿２をドープしたＩｎ＿２Ｏ＿
３の少なくとも１つを主成分とした金属酸化物であるこ
とを特徴とする透明導電体。(1) A transparent body, a thin film made of a metal oxide or metal sulfide attached to the surface of the transparent body, a metal layer made of a metal or alloy attached to the thin film, and a thin film made of a metal or alloy attached to the surface of the transparent body; In a transparent conductor comprising a high refractive index layer made of a metal oxide, the high refractive index layer made of the metal oxide is In_2O_3, SnO_2, ZnO, CdO, Sb_
2O_3 or In_2O_ doped with SnO_2
A transparent conductor characterized by being a metal oxide containing at least one of the following as a main component.
びＲｈの少なくとも１種を主成分とする特許請求の範囲
第１項記載の透明導電体。(2) The transparent conductor according to claim 1, wherein the metal layer contains at least one of Au, Ag, Cu, Al, Pd, and Rh as a main component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25536786A JPS63110507A (en) | 1986-10-27 | 1986-10-27 | Transparent conductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25536786A JPS63110507A (en) | 1986-10-27 | 1986-10-27 | Transparent conductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63110507A true JPS63110507A (en) | 1988-05-16 |
Family
ID=17277785
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25536786A Pending JPS63110507A (en) | 1986-10-27 | 1986-10-27 | Transparent conductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63110507A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003503607A (en) * | 1999-07-06 | 2003-01-28 | ノッティングトン ホールディング ビー．ヴィ． | Breathable wear garments that improve comfort for the human body |
| US6838159B2 (en) * | 1992-03-27 | 2005-01-04 | Cardinal Glass Industries, Inc. | High transmittance, low emissivity coatings for substrates |
| JP2007298602A (en) * | 2006-04-28 | 2007-11-15 | Toppan Printing Co Ltd | Structure, transmission type liquid crystal display device, manufacturing method of semiconductor circuit and manufacturing method of transmission type liquid crystal display device |
| JP2007298627A (en) * | 2006-04-28 | 2007-11-15 | Toppan Printing Co Ltd | Display device and its manufacturing method |
| JP2010534930A (en) * | 2007-07-27 | 2010-11-11 | サン−ゴバン グラス フランス | Solar cell front substrate and usage of solar cell front substrate |
| WO2015111327A1 (en) * | 2014-01-24 | 2015-07-30 | コニカミノルタ株式会社 | Transparent conductor |
| JP2016160115A (en) * | 2015-02-27 | 2016-09-05 | コニカミノルタ株式会社 | Method for selecting transparent conductive member |
| KR20180126470A (en) | 2016-03-23 | 2018-11-27 | 미쓰비시 마테리알 가부시키가이샤 | A laminated transparent conductive film, a laminated wiring film, and a method for manufacturing a laminated wiring film |
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|---|---|---|---|---|
| JPS5136477A (en) * | 1974-09-20 | 1976-03-27 | Toray Industries | Arufua amino ipushiron kapurorakutamu no tanriho |
| JPS5312290A (en) * | 1976-07-21 | 1978-02-03 | Teijin Ltd | Partly light transmissive photoconductive sheet |
| JPS56136410A (en) * | 1980-03-28 | 1981-10-24 | Teijin Ltd | Method of producing transparent conductive laminate |
| JPS61111940A (en) * | 1984-10-29 | 1986-05-30 | ピーピージー・インダストリーズ・インコーポレーテツド | High permeability and low radiation product and manufacture |
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1986
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5136477A (en) * | 1974-09-20 | 1976-03-27 | Toray Industries | Arufua amino ipushiron kapurorakutamu no tanriho |
| JPS5312290A (en) * | 1976-07-21 | 1978-02-03 | Teijin Ltd | Partly light transmissive photoconductive sheet |
| JPS56136410A (en) * | 1980-03-28 | 1981-10-24 | Teijin Ltd | Method of producing transparent conductive laminate |
| JPS61111940A (en) * | 1984-10-29 | 1986-05-30 | ピーピージー・インダストリーズ・インコーポレーテツド | High permeability and low radiation product and manufacture |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6838159B2 (en) * | 1992-03-27 | 2005-01-04 | Cardinal Glass Industries, Inc. | High transmittance, low emissivity coatings for substrates |
| US7060359B2 (en) | 1992-03-27 | 2006-06-13 | Cardinal Cg Company | High transmittance, low emissivity coatings for substrates |
| JP2003503607A (en) * | 1999-07-06 | 2003-01-28 | ノッティングトン ホールディング ビー．ヴィ． | Breathable wear garments that improve comfort for the human body |
| JP4727877B2 (en) * | 1999-07-06 | 2011-07-20 | ジェオックス エス．ピー．エー． | Breathable worn clothing that improves human comfort |
| JP2007298602A (en) * | 2006-04-28 | 2007-11-15 | Toppan Printing Co Ltd | Structure, transmission type liquid crystal display device, manufacturing method of semiconductor circuit and manufacturing method of transmission type liquid crystal display device |
| JP2007298627A (en) * | 2006-04-28 | 2007-11-15 | Toppan Printing Co Ltd | Display device and its manufacturing method |
| JP2010534930A (en) * | 2007-07-27 | 2010-11-11 | サン−ゴバン グラス フランス | Solar cell front substrate and usage of solar cell front substrate |
| JP2010534928A (en) * | 2007-07-27 | 2010-11-11 | サン−ゴバン グラス フランス | Use of solar cell front substrate and substrate used for solar cell front |
| JP2010534929A (en) * | 2007-07-27 | 2010-11-11 | サン−ゴバン グラス フランス | Method for using solar cell front substrate and solar cell front substrate |
| WO2015111327A1 (en) * | 2014-01-24 | 2015-07-30 | コニカミノルタ株式会社 | Transparent conductor |
| JP2016160115A (en) * | 2015-02-27 | 2016-09-05 | コニカミノルタ株式会社 | Method for selecting transparent conductive member |
| KR20180126470A (en) | 2016-03-23 | 2018-11-27 | 미쓰비시 마테리알 가부시키가이샤 | A laminated transparent conductive film, a laminated wiring film, and a method for manufacturing a laminated wiring film |
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