CN101807604B - 一种点接触ldmos结构晶体管单元 - Google Patents
一种点接触ldmos结构晶体管单元 Download PDFInfo
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- CN101807604B CN101807604B CN2010101382310A CN201010138231A CN101807604B CN 101807604 B CN101807604 B CN 101807604B CN 2010101382310 A CN2010101382310 A CN 2010101382310A CN 201010138231 A CN201010138231 A CN 201010138231A CN 101807604 B CN101807604 B CN 101807604B
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- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 17
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 17
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 239000002184 metal Substances 0.000 claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000407 epitaxy Methods 0.000 claims description 4
- 229910021332 silicide Inorganic materials 0.000 claims description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
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- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101382310A CN101807604B (zh) | 2010-04-02 | 2010-04-02 | 一种点接触ldmos结构晶体管单元 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101382310A CN101807604B (zh) | 2010-04-02 | 2010-04-02 | 一种点接触ldmos结构晶体管单元 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101807604A CN101807604A (zh) | 2010-08-18 |
| CN101807604B true CN101807604B (zh) | 2011-07-27 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101382310A Expired - Fee Related CN101807604B (zh) | 2010-04-02 | 2010-04-02 | 一种点接触ldmos结构晶体管单元 |
Country Status (1)
| Country | Link |
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| CN (1) | CN101807604B (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104600120B (zh) * | 2015-01-15 | 2017-11-14 | 东南大学 | 一种p型射频横向双扩散金属氧化物半导体器件 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7521768B2 (en) * | 2003-08-27 | 2009-04-21 | Nxp B.V. | Electric device comprising an LDMOS transistor |
| US7554154B2 (en) * | 2006-07-28 | 2009-06-30 | Alpha Omega Semiconductor, Ltd. | Bottom source LDMOSFET structure and method |
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2010
- 2010-04-02 CN CN2010101382310A patent/CN101807604B/zh not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| CN101807604A (zh) | 2010-08-18 |
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Application publication date: 20100818 Assignee: YANGZHOU GUOYU ELECTRONICS Co.,Ltd. Assignor: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.55 Research Institute Contract record no.: 2013320000051 Denomination of invention: Point contact Laterally Diffused Metal Oxide Semiconductor (LDMOS) structure transistor unit Granted publication date: 20110727 License type: Exclusive License Record date: 20130227 |
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Assignee: YANGZHOU GUOYU ELECTRONICS Co.,Ltd. Assignor: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.55 Research Institute Contract record no.: 2013320000051 Date of cancellation: 20151125 |
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Application publication date: 20100818 Assignee: YANGZHOU GUOYU ELECTRONICS Co.,Ltd. Assignor: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.55 Research Institute Contract record no.: 2015320000653 Denomination of invention: Point contact Laterally Diffused Metal Oxide Semiconductor (LDMOS) structure transistor unit Granted publication date: 20110727 License type: Exclusive License Record date: 20151217 |
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Assignee: YANGZHOU GUOYU ELECTRONICS Co.,Ltd. Assignor: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.55 Research Institute Contract record no.: 2015320000653 Date of cancellation: 20160922 |
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| LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
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