CN101771113A - Multi-unit synthesis type reflector based method for manufacturing power type light emitting diode - Google Patents
Multi-unit synthesis type reflector based method for manufacturing power type light emitting diode Download PDFInfo
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- CN101771113A CN101771113A CN200910013720A CN200910013720A CN101771113A CN 101771113 A CN101771113 A CN 101771113A CN 200910013720 A CN200910013720 A CN 200910013720A CN 200910013720 A CN200910013720 A CN 200910013720A CN 101771113 A CN101771113 A CN 101771113A
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- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 238000003786 synthesis reaction Methods 0.000 title claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 29
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 238000002955 isolation Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- 229910052594 sapphire Inorganic materials 0.000 claims description 18
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- 238000000151 deposition Methods 0.000 claims description 16
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- 230000002093 peripheral effect Effects 0.000 claims description 3
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- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 241001025261 Neoraja caerulea Species 0.000 claims description 2
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- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
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- 229910052732 germanium Inorganic materials 0.000 claims description 2
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Abstract
The invention discloses a multi-unit synthesis type reflector based method for manufacturing a power type vertical light emitting diode. The method micro-isolates the reflector of the power type vertical light emitting diode to form the multi-unit synthesis type reflector, greatly reduces the influence of thermal stress generated in a high-temperature welding process on Ag and semiconductor surface adhesive force, further fills highly resistant materials with equal altitude in each unit reflector micro-isolation belt, provides a flat welding surface to ensure welding strength, realizes high yield of the power type vertical light emitting diode, and simultaneously realizes the current blocking structure design to improve the luminous efficiency of the power type vertical light emitting diode.
Description
Technical field
The present invention relates to a kind of manufacture method of vertical LED, particularly relate to a kind of manufacture method of the power type light-emitting diode based on multi-unit synthesis type reflector.
Background technology
Present most GaN base extension mainly is to be grown on the Sapphire Substrate, because sapphire poor electric conductivity, common GaN base luminescent device adopts transversary, promptly two electrodes are in the same side of device, the electric current distance that lateral flow does not wait in the N-GaN layer, exist electric current to stop up, produce heat; In addition, the heat conductivility of Sapphire Substrate is low, has therefore limited the luminous power and the efficient of GaN base device.Sapphire Substrate removed luminescent device is made vertical stratification can effectively solve heat radiation, bright dipping and problem such as antistatic.
For vertical LED, on the one hand, the light of active layer emission downwards makes progress from the bright dipping of n type epitaxial surface after the reflection of p type extension contacting metal, therefore in order to obtain efficient vertical LED, need make the high reflectance ohmic contact metal layer in p type GaN base extension bottom, absorbed by metal level with the light that reduces the downward emission of active layer, guarantee the operating voltage and the efficient of device; For visible light wave range, silver (Ag) reflectivity is the highest in all metal materials, and can form good Ohmic contact with p type GaN base epitaxial loayer, be the first-selection in vertical LED p ohmic contact reflector by generally acknowledging therefore, but the adhesiveness of Ag and semiconductor surface is not good.On the other hand, before removing, Sapphire Substrate usually GaN base extension is welded to by the pressuring method of heating on dispel the heat preferably Si substrate or the metal substrate, because Ag and semi-conductive thermal coefficient of expansion (CTE) do not match, thermal coefficient of expansion as Ag is more than 3 times of extension of GaN base, therefore the high-temperature soldering process can produce the interlayer thermal stress, destroys the adhesion of Ag and p type GaN primary surface; And the light emitting diode with vertical structure with good heat-radiating substrate is more prone to be made into large scale power light-emitting device, but the material thermal stress directly is directly proportional with scantling, scantling is big more, the thermal stress that the high-temperature soldering process is born is big more, its appearance form is in making power-type vertical LED (as the 1mmx1mm chip) process: peel off and remove after the Sapphire Substrate Ag and separate with the GaN epitaxial interface and cause the GaN extension to peel off (peeling), lower rate of finished products was the bottleneck of power-type normal beam technique light-emitting diode realization volume production after it was peeled off.Traditional way is the adhesion thin metal layers preferably of making between p type GaN and Ag more, for example Ni/Ag, Pt/Ag etc., but its reflectivity is more much lower than Ag, therefore restrict the luminous efficiency of power-type vertical LED, and when making more the high power type device, also can have identical problem.
Summary of the invention
Cause sapphire to peel off back GaN extension greatly to peel off and cause the power-type vertical LED to make difficult problem for solving above-mentioned thermal strain because of high-temperature soldering process Ag, the present invention is intended to propose a kind of manufacture method of the power type light-emitting diode based on multi-unit synthesis type reflector.
A kind of manufacture method of the power type light-emitting diode based on multi-unit synthesis type reflector, its making step is as follows:
Step 1: epitaxial growth GaN base blue-ray LED luminescent material on Sapphire Substrate, luminescent material comprises n type GaN based semiconductor, active layer and p type GaN based semiconductor successively;
Step 2: deposition of reflective metal film on p type GaN based semiconductor, adopt chemical etching to remove each cycle device peripheral region and the subregional reflecting metallic film of cycle device central portion, be about to the speculum metal film and carry out little isolation formation multi-unit synthesis type reflector metal film, expose p type GaN base epitaxial surface between each unit reflecting mirror of isolation;
Step 3: under nitrogen atmosphere, reflecting metallic film is carried out high-temperature thermal annealing and handle the formation ohmic contact;
Step 4: the p type GaN base epitaxial surface deposition high resistant packing material suitable that is exposing with Ag thickness;
Step 5: deposited barrier layer metal on reflecting metallic film and high resistant packing material;
Step 6: depositing weld metal on the barrier metal material;
Step 7: get a heat-radiating substrate, and on the heat-radiating substrate deposition under weld metal;
Step 8: the GaN based epitaxial film that adopts the eutectic bonding mode that step 1 to step 5 is prepared is connected on the heat-radiating substrate that step 7 prepares;
Step 9: remove Sapphire Substrate;
Step 10: vertical corresponding n type GaN base extension upper surface region area deposition top electrode in the highly resistant material fill area;
Step 11: at heat-radiating substrate lower surface deposition bottom electrode.
Innovation part of the present invention mainly is that the little isolation of the speculum of power-type vertical LED is formed multi-unit synthesis type reflector, reduces the influence of thermal stress to Ag and semiconductor surface adhesion; And further in each unit reflecting mirror space, fill the highly resistant material of equal altitudes, the planarization of having realized GaN film solder side has been realized the luminous efficiency of current blocking structures design with boost device simultaneously to guarantee soldering reliability.Wherein: step 2 forms the little isolation of the Ag reflectance coating of chip-scale the Ag reflectance coating of multi-unit synthesis type, be because the adhesiveness of Ag and semiconductor surface is not good and its thermal mismatching is very big, and Ag THERMAL STRESS IN THIN FILMS size directly is directly proportional with the film size size, the size of power type light-emitting diode chip is generally more than 1mm * 1mm, so the Ag reflectance coating of size will worsen the adhesive force of Ag and p type GaN epitaxial surface in the thermal stress of high-temperature soldering process generation, come off in a large number and cause Sapphire Substrate to peel off back GaN epitaxial film, rate of finished products is quite low.Therefore, for the power-type vertical LED, Ag is little to be isolated the back cellar area and falls influence and the destruction that the adhesion that can directly reduce Ag and GaN of being several times lower than is subjected to high-temperature soldering process thermal stress; Step 3 is handled by high-temperature thermal annealing, promotes Ag and p type GaN surface to form ohmic contact, and improves the adhesiveness of itself and the basic extension of GaN; Integrating step two with after step 3 can reduce the laser lift-off Sapphire Substrate greatly since Ag separate with the GaN epitaxial interface and cause the GaN extension to peel off (peeling), the rate of finished products of raising power type light-emitting diode; The p type GaN base epitaxial surface filling thickness highly resistant material suitable that step 4 is exposing with Ag, can play filling effect on the one hand, for welding process provides an even curface, avoid that the height that causes because of the little isolation of reflectance coating is uneven to destroy the intensity that it welds with heat-radiating substrate; Integrating step ten on the other hand, and the current barrier layer structural design vertically corresponding to n electrode metal deposition region, has been finished simultaneously in step 4 highly resistant material fill area, therefore the light efficiency of bring to power type light-emitting diode.
In the inventive method, the preferred Ag of reflecting metallic film, thickness 100～120nm; The area of the unit reflecting mirror after little isolation is less than 0.6mm
2, its flat shape is selected square, rectangle, irregularly shaped or their combination for use; 400～500 ℃ of reflecting metallic film high-temperature thermal annealing temperature; The high resistant packing material is selected from SiO
2, Si
3N
4, Al
2O
3Or TiO
2, thickness 100～120nm; Last weld metal comprises the alloy of Au or Au; Following weld metal is selected from In, PdIn, AuIn, Sn, AuSn, AgSn, AuGe or AuSi; The preparation material of heat-radiating substrate is selected from GaAs, Ge, Si, Cu or Mo; 200～500 ℃ of eutectic bonding temperature, eutectic bonding pressure 1000～20000N; The Sapphire Substrate removing method adopts laser lift-off, grinding, wet etching or in conjunction with any two kinds of technology in aforementioned.
The invention has the beneficial effects as follows: innovation ground forms multi-unit synthesis type reflector with the little isolation of the speculum of power-type vertical LED, significantly reduce of the influence of the thermal stress of high-temperature soldering process generation to Ag and semiconductor surface adhesion, and further fill the highly resistant material of equal altitudes in the little isolation strip of each unit reflecting mirror, provide smooth solder side to guarantee weld strength, realize the high finished product rate of power-type vertical LED, also realized the luminous efficiency of current blocking structures design simultaneously with bring to power type vertical LED.
Description of drawings
Fig. 1 a to Fig. 1 i is the schematic cross-section based on the manufacturing process of the power-type vertical LED of multi-unit synthesis type reflector of the preferred embodiment of the present invention;
Fig. 2 a to Fig. 2 c is the floor map based on the manufacturing process committed step of the power-type vertical LED of multi-unit synthesis type reflector of the preferred embodiment of the present invention.
Parts are described as follows in the accompanying drawing:
100: Sapphire Substrate
110:GaN base extension
The 120:p reflecting metallic film
130: the high resistant packing material
140: barrier metal layer
150: go up weld metal
160: top electrode
200: heat-radiating substrate
210: following weld metal
220: bottom electrode
Embodiment
Below in conjunction with drawings and Examples the present invention one is gone on foot explanation.
A kind of manufacture method of the power type light-emitting diode based on multi-unit synthesis type reflector, its step is as follows:
Step 1: as shown in Figure 1a, adopt MOCVD method epitaxial growth GaN base LED luminescent material 110 on Sapphire Substrate 100, luminescent material comprises n type GaN based semiconductor, active layer and p type GaN based semiconductor successively;
Step 2: shown in Fig. 1 b, adopt electron beam evaporation on p type GaN base semiconductor laminar surface, to deposit p metal and reflecting metallic film 120, select Ag for use, thickness 1000nm; Shown in Fig. 1 c, adopt chemical etching to remove each cycle device peripheral region and the subregional Ag reflecting metallic film of cycle device central portion, be about to the speculum metal film and carry out little isolation formation multi-unit synthesis type reflector metal film, expose p type GaN base extension 110 surfaces between each unit reflecting mirror of isolating, shown in Fig. 2 a;
Step 3: under the pure nitrogen gas atmosphere, reflecting metallic film 120 is carried out the ohmic contact and the adhesive force of high annealing improvement and GaN base semiconductor unit component 110;
Step 4: shown in Fig. 1 d, adopt chemical gaseous phase deposition (PECVD), select SiO for use at reflecting metallic film 120 (speculum) and middle exposed p type GaN base extension 110 surface deposition high resistant packing materials 130
2, thickness 1000nm; And adopt method for chemially etching will be deposited on the SiO of speculum 120 upper surfaces
2Remove, promptly at the highly resistant material 130 of speculum 120 little area of isolation packed height unanimities, the sectional structure after it is filled is shown in Fig. 2 b;
Step 5: shown in Fig. 1 e, adopt electron beam evaporation at reflecting metallic film 120 and high resistant packing material 130 upper surface deposited barrier layer metals 140, select WTi/Ti/Pt for use, thickness is 100/30/100nm;
Step 6: shown in Fig. 1 f, adopt electron beam evaporation weld metal on barrier metal 140 upper surfaces deposition, select Cr/Au for use, thickness is 50/1500nm;
Step 7: get a Si substrate 200 as heat-radiating substrate, adopt weld metal layers 210 under the electron beam evaporation thereon, material selection Cr/Ni/Au/AuSn, thickness are 20/50/150/500nm, and wherein the AuSn ratio is 80: 20;
Step 8: shown in Fig. 1 g, adopt the eutectic bonding mode the above-mentioned GaN extension for preparing to be connected on the Si substrate 200 280 ℃ of key and temperature, pressure 5000N.
Step 9: shown in Fig. 1 h, adopt 248nm KrF excimer laser to peel off and remove Sapphire Substrate 100, the about 1J/cm of laser energy density
2
Step 10: shown in Fig. 1 i, at the vertical corresponding n type GaN base of highly resistant material 130 extension upper surface region area deposition top electrodes 160, it prepares plane effect behind the top electrode shown in Fig. 2 c,
Step 11: electron beam evaporation plating bottom electrode 160 on Si substrate 200 back sides, all select Cr/Pt/Au for use, thickness is 50/50/1000nm.
The present invention reduces the influence of thermal stress to Ag and semiconductor surface adhesion by the little isolation of the speculum of power-type vertical LED is formed multi-unit synthesis type reflector (reflecting metallic film 120); In each unit reflecting mirror space, fill the highly resistant material of equal altitudes simultaneously, guarantee the planarization and the soldering reliability of GaN film solder side, realized the luminous efficiency of current blocking structures design simultaneously with boost device.
Claims (10)
1. manufacture method based on the power type light-emitting diode of multi-unit synthesis type reflector, its step is as follows,
Step 1: epitaxial growth GaN base blue-ray LED luminescent material on Sapphire Substrate, luminescent material comprises n type GaN based semiconductor, active layer and p type GaN based semiconductor successively;
Step 2: deposition of reflective metal film on p type GaN based semiconductor, adopt chemical etching to remove each cycle device peripheral region and the subregional reflecting metallic film of cycle device central portion, be about to the speculum metal film and carry out little isolation formation multi-unit synthesis type reflector metal film, expose p type GaN base epitaxial surface between each unit reflecting mirror of isolation;
Step 3: under nitrogen atmosphere, reflecting metallic film is carried out high-temperature thermal annealing and handle the formation ohmic contact;
Step 4: the p type GaN base epitaxial surface deposition high resistant packing material suitable that is exposing with Ag thickness;
Step 5: deposited barrier layer metal on reflecting metallic film and high resistant packing material;
Step 6: depositing weld metal on the barrier metal material;
Step 7: get a heat-radiating substrate, and on the heat-radiating substrate deposition under weld metal;
Step 8: the GaN based epitaxial film that adopts the eutectic bonding mode that step 1 to step 5 is prepared is connected on the heat-radiating substrate that step 7 prepares;
Step 9: remove Sapphire Substrate;
Step 10: vertical corresponding n type GaN base extension upper surface region area deposition top electrode in the highly resistant material fill area;
Step 11: at heat-radiating substrate lower surface deposition bottom electrode.
2. the manufacture method of light-emitting diode according to claim 1 is characterized in that: the preferred Ag of reflecting metallic film, thickness 100～120nm.
3. the manufacture method of light-emitting diode according to claim 1, it is characterized in that: the area of the unit reflecting mirror after little isolation is less than 0.6mm
2, its flat shape is selected square, rectangle, irregularly shaped or their combination for use.
4. the manufacture method of light-emitting diode according to claim 1 is characterized in that: 400～500 ℃ of reflecting metallic film high-temperature thermal annealing temperature.
5. the manufacture method of light-emitting diode according to claim 1, it is characterized in that: the high resistant packing material is selected from SiO
2, Si
3N
4, Al
2O
3Or TiO
2, thickness 100～120nm.
6. the manufacture method of light-emitting diode according to claim 1 is characterized in that: go up the alloy that weld metal comprises Au or Au.
7. the manufacture method of light-emitting diode according to claim 1, it is characterized in that: following weld metal is selected from In, PdIn, AuIn, Sn, AuSn, AgSn, AuGe or AuSi.
8. the manufacture method of light-emitting diode according to claim 1, it is characterized in that: the preparation material of heat-radiating substrate is selected from GaAs, Ge, Si, Cu or Mo.
9. the manufacture method of light-emitting diode according to claim 1 is characterized in that: 200～500 ℃ of eutectic bonding temperature, eutectic bonding pressure 1000～20000N.
10. the manufacture method of light-emitting diode according to claim 1 is characterized in that: the Sapphire Substrate removing method adopts laser lift-off, grinding, wet etching or in conjunction with any two kinds of technology in aforementioned.
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|---|---|---|---|
| CN2009100137200A CN101771113B (en) | 2009-01-04 | 2009-01-04 | Multi-unit synthesis type reflector based method for manufacturing power type light emitting diode |
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|---|---|---|---|
| CN2009100137200A CN101771113B (en) | 2009-01-04 | 2009-01-04 | Multi-unit synthesis type reflector based method for manufacturing power type light emitting diode |
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| CN101771113B CN101771113B (en) | 2011-07-20 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102157649A (en) * | 2011-01-31 | 2011-08-17 | 杭州士兰明芯科技有限公司 | Gallium nitride light-emitting diode (GaN LED) chip with vertical structure and manufacturing method thereof |
| CN102447015A (en) * | 2010-10-01 | 2012-05-09 | 陈祖辉 | Vertical structural light emitting diode (LED) |
| WO2013139251A1 (en) * | 2012-03-21 | 2013-09-26 | 厦门市三安光电科技有限公司 | Light-emitting diode with reflector and manufacturing method therefor |
| CN103618035A (en) * | 2013-11-14 | 2014-03-05 | 南昌黄绿照明有限公司 | GaN-based LED thin-film chip with stress modulation layer and manufacturing method thereof |
| CN108321094A (en) * | 2017-12-21 | 2018-07-24 | 河源市众拓光电科技有限公司 | The method of raising light emitting diode (LED) chip with vertical structure reflectance of reflector based on stress regulation and control |
| CN108511568A (en) * | 2017-12-21 | 2018-09-07 | 河源市众拓光电科技有限公司 | A kind of light emitting diode (LED) chip with vertical structure and preparation method thereof of double insert layer mirror structures |
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| KR100483049B1 (en) * | 2003-06-03 | 2005-04-15 | 삼성전기주식회사 | A METHOD OF PRODUCING VERTICAL GaN LIGHT EMITTING DIODES |
| JP4978877B2 (en) * | 2004-06-10 | 2012-07-18 | 信越半導体株式会社 | Light emitting device manufacturing method and light emitting device |
| US7335924B2 (en) * | 2005-07-12 | 2008-02-26 | Visual Photonics Epitaxy Co., Ltd. | High-brightness light emitting diode having reflective layer |
| CN101257077B (en) * | 2008-04-08 | 2010-12-22 | 中山大学 | Semiconductor light emitting diode device with photon crystal high reflection layer |
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2009
- 2009-01-04 CN CN2009100137200A patent/CN101771113B/en active Active
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| CN102447015A (en) * | 2010-10-01 | 2012-05-09 | 陈祖辉 | Vertical structural light emitting diode (LED) |
| CN102447015B (en) * | 2010-10-01 | 2015-11-25 | 陈祖辉 | A kind of light emitting diode with vertical structure |
| CN102157649A (en) * | 2011-01-31 | 2011-08-17 | 杭州士兰明芯科技有限公司 | Gallium nitride light-emitting diode (GaN LED) chip with vertical structure and manufacturing method thereof |
| WO2013139251A1 (en) * | 2012-03-21 | 2013-09-26 | 厦门市三安光电科技有限公司 | Light-emitting diode with reflector and manufacturing method therefor |
| CN103618035A (en) * | 2013-11-14 | 2014-03-05 | 南昌黄绿照明有限公司 | GaN-based LED thin-film chip with stress modulation layer and manufacturing method thereof |
| CN108321094A (en) * | 2017-12-21 | 2018-07-24 | 河源市众拓光电科技有限公司 | The method of raising light emitting diode (LED) chip with vertical structure reflectance of reflector based on stress regulation and control |
| CN108511568A (en) * | 2017-12-21 | 2018-09-07 | 河源市众拓光电科技有限公司 | A kind of light emitting diode (LED) chip with vertical structure and preparation method thereof of double insert layer mirror structures |
| CN108511568B (en) * | 2017-12-21 | 2020-07-07 | 河源市众拓光电科技有限公司 | Vertical-structure LED chip with double-insertion-layer reflector structure and preparation method thereof |
| CN108321094B (en) * | 2017-12-21 | 2020-07-28 | 河源市众拓光电科技有限公司 | Method for improving reflectivity of reflector of L ED chip with vertical structure based on stress regulation |
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| CN101771113B (en) | 2011-07-20 |
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