CN101763139A - Band-gap reference voltage-stabilizing circuit - Google Patents
Band-gap reference voltage-stabilizing circuit Download PDFInfo
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- CN101763139A CN101763139A CN201019063038A CN201019063038A CN101763139A CN 101763139 A CN101763139 A CN 101763139A CN 201019063038 A CN201019063038 A CN 201019063038A CN 201019063038 A CN201019063038 A CN 201019063038A CN 101763139 A CN101763139 A CN 101763139A
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Abstract
The invention discloses a band-gap reference voltage-stabilizing circuit comprising a reference voltage generating circuit, a comparison circuit, a selection circuit, a voltage-stabilizing circuit and a band-gap reference voltage generating circuit, wherein the reference voltage generating circuit is used for generating reference voltage; the comparison circuit is connected with the reference voltage generating circuit and outputs a driving signal after comparing the voltage inputted with the comparison circuit; the selection circuit is connected with the reference voltage generating circuit and is driven to selectively output the voltage inputted to the selection circuit by the driving signal; the voltage-stabilizing circuit is connected with the selection circuit and outputs stabilized voltage; and the band-gap reference voltage generating circuit is supplied with power by the voltage-stabilizing circuit and generates band-gap reference voltage, and meanwhile, the band-gap reference voltage is inputted to the reference voltage generating circuit and the comparison circuit. The band-gap reference voltage-stabilizing circuit can reliably work under the condition of wide voltage input without using a high-voltage transistor and obtain accurate band-gap reference voltage and accurate stabilized voltage.
Description
Technical field
The present invention is about a kind of band-gap reference mu balanced circuit, particularly about a kind of band-gap reference mu balanced circuit that works in wide operating voltage range.
Background technology
Benchmark source of stable pressure or Voltage Reference (Voltage Reference) typically refer to the high-precision voltage source that is used as voltage reference in circuit.Along with the continuous increase of integrated circuit scale, the especially development of SOC (system on a chip) integrated technology (SOC), it also becomes on a large scale, indispensable basic circuit module in VLSI (very large scale integrated circuit) and the nearly all digital simulator system.In many integrated circuit and circuit unit,, all need accurate and stable voltage reference as digital to analog converter (DAC), analog to digital converter (ADC), linear voltage regulator and switching regulator.As in digital to analog converter, DAC selects and produces simulation output according to the digital input signals that is presented on its input end from DC reference voltage; And in analog to digital converter, the DC voltage benchmark is used from analog input signal one again and produces digitized output signal.In the digital communication system of precision measuring instrument instruments and meters and widespread use, all often reference voltage source is used as the benchmark of systematic survey and calibration, therefore, the benchmark source of stable pressure occupies very consequence in Analogous Integrated Electronic Circuits, it directly affects the performance and the precision of electronic system.
Band gap voltage (Bandgap Voltage) benchmark is a kind of of benchmark source of stable pressure, it is widely used in the SOC design, in the SOC system, utilize the band-gap reference mu balanced circuit to power usually to system, therefore extremely important to the SOC performance as the band gap voltage levels of precision of reference voltage use.
Fig. 1 is a kind of band-gap reference mu balanced circuit circuit diagram commonly used in the prior art, wherein band-gap reference generation circuit 11 and voltage stabilizer 12 work under the wide voltage input condition, supply voltage is 2.7-5V when using as SIM card, for reliably working in wide voltage condition, transistor is not breakdown when making high input voltage, and band-gap reference produces circuit need use high voltage transistor.And according to transistor working principle, the corresponding high field intensity of high voltage, when voltage is increased to certain numerical value, transistorized two knots overlap under effect of electric field, a large amount of charge carriers directly flow between two PN junctions, cause electric current sharply to increase, transistor is breakdown, and for being used for semi-conductive certain material and special process, its voltage breakdown increases with thickness, therefore need use thicker material for obtaining high-breakdown-voltage, general base thickness or the channel length of increasing, must reduce transistorized cutoff frequency like this and increase transistorized noise, cause the tracking velocity of Bandgap Reference Voltage Generation Circuit to reduce and the noise voltage rising thus, other circuit and even the system's generation of using this bandgap voltage reference seriously influenced very much.
In sum, the band-gap reference mu balanced circuit of prior art is to work in wide voltage to adopt high voltage transistor to have the problem that reduces transistorized cutoff frequency easily and increase transistorized noise as can be known, and the tracking velocity that causes Bandgap Reference Voltage Generation Circuit thus reduces and noise voltage rises, therefore be necessary to propose improved technological means in fact, solve this problem.
Summary of the invention
For overcoming the various shortcoming of above-mentioned prior art, fundamental purpose of the present invention is to provide a kind of band-gap reference mu balanced circuit, it can reliably work in wide voltage input condition and need not use high voltage transistor, can produce more accurately bandgap voltage reference and supply voltage more accurately is provided.
For reaching above-mentioned and other purpose, a kind of band-gap reference mu balanced circuit of the present invention comprises at least:
Generating circuit from reference voltage is used to produce a reference voltage;
Comparator circuit has the first input end and second input end at least, and this first input end is connected in this generating circuit from reference voltage, and this comparator circuit is exported a drive signal in the back to the voltage ratio of importing this comparator circuit;
Select circuit, be connected in this comparator circuit to receive this drive signal, and have the 3rd input end and four-input terminal at least, and the 3rd input end is connected in this generating circuit from reference voltage, and this selection circuit is selected output to the voltage of importing this selection circuit under the driving of this drive signal;
Mu balanced circuit connects a supply voltage, and is connected in this selection circuit, and the voltage of importing this mu balanced circuit is carried out exporting a voltage of voltage regulation after the voltage stabilizing; And
Bandgap Reference Voltage Generation Circuit by this voltage of voltage regulation power supply, produces a bandgap voltage reference, and this bandgap voltage reference is output to comparator circuit second input end and selection circuit four-input terminal.
Further, the scope of this supply voltage is 2.7-5V.
Further, this comparator circuit is a comparer.
Further, this selection circuit is that multi-way switch is selected circuit.
Further, be higher than this reference voltage during this bandgap voltage reference steady operation.
Further, this reference voltage base produces the transistor realization of circuit by several threshold values.
Further, this reference voltage base produces circuit by a simple Bandgap Reference Voltage Generation Circuit realization.
Compared with prior art, the bandgap voltage reference that a kind of band-gap reference mu balanced circuit of the present invention produces by a comparator circuit and reference voltage and the Bandgap Reference Voltage Generation Circuit of selecting circuit to the generating circuit from reference voltage generation is selected the benchmark as mu balanced circuit, and will offer Bandgap Reference Voltage Generation Circuit through the voltage of voltage regulation after the mu balanced circuit voltage stabilizing as its supply voltage, make band-gap reference mu balanced circuit of the present invention form a negative feedback, need not use high voltage transistor, band-gap reference mu balanced circuit of the present invention just can reliably working in wide voltage input condition, and can obtain bandgap voltage reference and voltage of voltage regulation more accurately more accurately.
Description of drawings
Fig. 1 is the circuit diagram of a kind of band-gap reference mu balanced circuit of prior art;
Fig. 2 is the circuit structure diagram of a kind of band-gap reference mu balanced circuit of the present invention;
Fig. 3 is the circuit diagram of a kind of band-gap reference mu balanced circuit one preferred embodiment of the present invention.
Embodiment
Below by specific instantiation and accompanying drawings embodiments of the present invention, those skilled in the art can understand other advantage of the present invention and effect easily by the content that this instructions disclosed.The present invention also can be implemented or be used by other different instantiation, and the every details in this instructions also can be based on different viewpoints and application, carries out various modifications and change under the spirit of the present invention not deviating from.
Fig. 2 is the circuit diagram of a kind of band-gap reference mu balanced circuit of the present invention.As shown in Figure 2, a kind of band-gap reference mu balanced circuit 100 of the present invention comprises generating circuit from reference voltage 101, comparator circuit 102, selects circuit 103, mu balanced circuit 104 and Bandgap Reference Voltage Generation Circuit 105.
Generating circuit from reference voltage 101 is used to produce one not too accurately but be fit to work in the reference voltage VREF_TP of wide input voltage VDDA, this circuit can be realized by the transistor of one or more threshold values, perhaps produces the circuit realization by a simple bandgap reference voltage that works in wide-voltage range; Comparator circuit 102 has the first input end and second input end, this first input end is connected in this generating circuit from reference voltage 101, this reference voltage VREF_TP is input to the input signal of this comparator circuit 102 as its first input end, this second input end is connected in the output terminal of Bandgap Reference Voltage Generation Circuit 105, and the bandgap voltage reference VREF that this Bandgap Reference Voltage Generation Circuit 105 produces is input to the input signal of this comparator circuit 102 as its second input end; Select circuit 103 to have the 3rd input end and four-input terminal, the 3rd input end is connected in this generating circuit from reference voltage 101, this reference voltage VREF_TP is input to the input signal of this selection circuit 103 as its 3rd input end, this four-input terminal is connected in the output terminal of this Bandgap Reference Voltage Generation Circuit 105, the bandgap voltage reference VREF that this Bandgap Reference Voltage Generation Circuit 105 produces is input to this selection circuit 103 input signals as its four-input terminal, simultaneously, this selection circuit 103 also is connected with this comparator circuit 102 to receive the drive signal SEL of this comparator circuit output, this selects circuit 103 under the driving of this drive signal SEL, and output is selected in the input of the 3rd input end and this four-input terminal; Mu balanced circuit 104 is connected in this selection circuit 103, its voltage VREF2 with these selection circuit 103 outputs is that reference voltage carries out voltage stabilizing to supply voltage VDDA, exporting voltage of voltage regulation VDD to a SOC chip through voltage stabilizing powers, this supply voltage VDDA is a wide operating voltage among the present invention, is specifically as follows 2.7-5V; This voltage of voltage regulation VDD also is used for to these Bandgap Reference Voltage Generation Circuit 105 power supplies simultaneously, so that this Bandgap Reference Voltage Generation Circuit 105 produces a bandgap voltage reference VREF to this SOC chip.
During powered on moment, because of voltage of voltage regulation VDD does not reach stationary value as yet, Bandgap Reference Voltage Generation Circuit 105 supply voltages are lower, its bandgap voltage reference output instantaneous amplitude is lower, so the selected circuit 103 of the reference voltage V REF_TP that generating circuit from reference voltage 101 produces is selected output, this reference voltage V REF_TP is used as the benchmark of mu balanced circuit 104, voltage of voltage regulation VDD of mu balanced circuit 104 outputs through voltage stabilizing, give Bandgap Reference Voltage Generation Circuit 105 power supplies by this voltage of voltage regulation VDD, produce bandgap voltage reference VREF, then, bandgap voltage reference VREF and this reference voltage V REF_TP are through comparator circuit 102 relatively, if this bandgap voltage reference VREF is than VREF_TP height, then the drive signal SEL of these comparator circuit 102 outputs is high, and this moment, this drive signal SEL drove the benchmark of this selection circuit 103 this bandgap voltage reference of selection VREF as this mu balanced circuit 104.Because voltage of voltage regulation VDD is the voltage of stablizing through mu balanced circuit 104, its variation range is little a lot of than supply voltage VDDA, in general, voltage of voltage regulation VDD typical case fluctuation range is ± 0.1V, do not need to consider the variation of supply voltage when therefore Bandgap Reference Voltage Generation Circuit 105 designs, do not need to use high voltage transistor, simultaneously because used low withstand voltage transistor, transistorized high-frequency cut-off frequency is higher, the tracking velocity of Bandgap Reference Voltage Generation Circuit 105 can be faster, the noise that circuit produced can be littler, threshold mismatch between transistor is also littler, its bandgap voltage reference VREF that is produced can be more accurate by voltage of voltage regulation VDD effect back, bandgap voltage reference VREF is littler because of supply voltage changes the variation that causes, the voltage of voltage regulation VDD that exports as the mu balanced circuit 104 of benchmark with this bandgap voltage reference VREF also can be more accurate accordingly.
The present invention see also Fig. 3 in order more clearly to illustrate, it is depicted as the circuit diagram of the present invention with the band-gap reference mu balanced circuit that preferred embodiment was provided.This band-gap reference mu balanced circuit comprises generating circuit from reference voltage 201, comparer 202, multi-way switch selection circuit 203, voltage stabilizer 204 and Bandgap Reference Voltage Generation Circuit 205.The bandgap voltage reference VREF that the reference voltage VREF_TP that generating circuit from reference voltage 201 produces and bandgap voltage reference circuit 205 produce is two input ends of device 202 and multidiameter option switch 203 as a comparison, and the output terminal of this comparer 202 is connected in this multidiameter option switch 203 to drive the selection of this multidiameter option switch 203 to two input, the output of this multidiameter option switch 203 after selecting is input to the benchmark of this voltage stabilizer 204 as this voltage stabilizer 204, this voltage stabilizer 204 is powered by a wide operating voltage VDDA, output one is through the voltage of voltage regulation VDD of voltage stabilizing, in the embodiment of the invention, this wide operating voltage VDDA scope is 2.7-5V, voltage of voltage regulation VDD after the voltage stabilizing gives this Bandgap Reference Voltage Generation Circuit 205 power supplies, produces bandgap voltage reference VREF.
During powered on moment, because bandgap voltage reference VREF is for very low, the reference voltage VREF_TP that generating circuit from reference voltage 201 produces is than bandgap voltage reference VREF height, this moment, comparer 202 output drive signal SEL were low, this drive signal SEL drives multi-way switch and selects circuit 203 to select the benchmark of VREF_TP as voltage stabilizer 204, though this moment, voltage stabilizer was powered by wide operating voltage VDDA, but through comparatively stable voltage of voltage regulation VDD of output after the voltage stabilizing, this moment, this voltage of voltage regulation VDD gave Bandgap Reference Voltage Generation Circuit 205 power supplies, produce reference voltage V REF, because this voltage of voltage regulation VDD is comparatively stable, therefore the bandgap voltage reference VREF of these Bandgap Reference Voltage Generation Circuit 205 generations is comparatively accurate, this bandgap voltage reference VREF and this reference voltage VREF_TP compare through this comparer 202, in embodiments of the present invention, the bandgap voltage reference VREF that this Bandgap Reference Voltage Generation Circuit 205 produces should be at least than this reference voltage VREF_TP height, because this bandgap voltage reference VREF is than this reference voltage VREF_TP height, then this comparer 202 output drive signal SEL are high, drive signal SEL drives multi-way switch and selects circuit 203 to select the benchmark of this bandgap voltage reference VREF as this voltage stabilizer 204, through output voltage of voltage regulation VDD after these voltage stabilizer 204 voltage stabilizings, because through this bandgap voltage reference VREF before this voltage stabilizer 204 and linear through this voltage of voltage regulation VDD after these voltage stabilizer 204 voltage stabilizings, therefore the voltage of voltage regulation VDD through voltage stabilizer 204 outputs is then more accurate, this voltage of voltage regulation VDD produces bandgap voltage reference VREF for these Bandgap Reference Voltage Generation Circuit 205 power supplies simultaneously, because it is linear as this bandgap voltage reference VREF that this voltage of voltage regulation and this Bandgap Reference Voltage Generation Circuit 205 of these Bandgap Reference Voltage Generation Circuit 205 supply voltages are exported, more accurately under the situation, this bandgap voltage reference VREF also can be more accurate at this voltage of voltage regulation VDD.
Because band-gap reference mu balanced circuit of the present invention does not need to consider the variation of input voltage, therefore do not need to use high voltage transistor, the bandgap voltage reference VREF that is produced is more accurate, and the voltage of voltage regulation VDD that exports as the voltage stabilizer of benchmark with this bandgap voltage reference VREF also can be more accurate accordingly.
The foregoing description is illustrative principle of the present invention and effect thereof only, but not is used to limit the present invention.Any those skilled in the art all can be under spirit of the present invention and category, and the foregoing description is modified and changed.Therefore, the scope of the present invention should be listed as claims.
Claims (7)
1. band-gap reference mu balanced circuit comprises at least:
Generating circuit from reference voltage is used to produce a reference voltage;
Comparator circuit has the first input end and second input end at least, and this first input end is connected in this generating circuit from reference voltage, and this comparator circuit is exported a drive signal in the back to the voltage ratio of importing this comparator circuit;
Select circuit, be connected in this comparator circuit to receive this drive signal, and have the 3rd input end and four-input terminal at least, and the 3rd input end is connected in this generating circuit from reference voltage, and this selection circuit is selected output to the voltage of importing this selection circuit under the driving of this drive signal;
Mu balanced circuit connects a supply voltage, and is connected in this selection circuit, and the voltage of importing this mu balanced circuit is carried out exporting a voltage of voltage regulation after the voltage stabilizing; And
Bandgap Reference Voltage Generation Circuit by this voltage of voltage regulation power supply, produces a bandgap voltage reference, and this bandgap voltage reference is output to this second input end and this four-input terminal.
2. band-gap reference mu balanced circuit as claimed in claim 1 is characterized in that, the scope of this supply voltage is 2.7V-5V.
3. band-gap reference mu balanced circuit as claimed in claim 2 is characterized in that, this comparator circuit is a comparer.
4. band-gap reference mu balanced circuit as claimed in claim 3 is characterized in that, this selection circuit is that multi-way switch is selected circuit.
5. band-gap reference mu balanced circuit as claimed in claim 4 is characterized in that this bandgap voltage reference is higher than this reference voltage.
6. band-gap reference mu balanced circuit as claimed in claim 5 is characterized in that, this generating circuit from reference voltage is realized by the transistor of several threshold values.
7. band-gap reference mu balanced circuit as claimed in claim 6 is characterized in that, this generating circuit from reference voltage produces circuit by a simple band gap and realizes.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201019063038A CN101763139A (en) | 2010-02-05 | 2010-02-05 | Band-gap reference voltage-stabilizing circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201019063038A CN101763139A (en) | 2010-02-05 | 2010-02-05 | Band-gap reference voltage-stabilizing circuit |
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| CN101763139A true CN101763139A (en) | 2010-06-30 |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102662424A (en) * | 2012-03-23 | 2012-09-12 | 上海信耀电子有限公司 | Precise voltage stabilizing circuit for singlechip |
| CN102710123A (en) * | 2012-06-07 | 2012-10-03 | 无锡市晶源微电子有限公司 | High-efficiency low-power consumption pulse energy conversion module |
| CN103838282A (en) * | 2014-03-19 | 2014-06-04 | 广州钧衡微电子科技有限公司 | Circuit for adjusting voltages based on temperature |
| CN104932601A (en) * | 2015-06-26 | 2015-09-23 | 华南理工大学 | Band-gap reference voltage source having high power supply rejection ratio |
| CN105138062A (en) * | 2014-05-29 | 2015-12-09 | 展讯通信（上海）有限公司 | System improving load regulation rate of low-pressure-difference linear voltage regulator |
| CN105305810A (en) * | 2014-05-29 | 2016-02-03 | 展讯通信（上海）有限公司 | Improved charge pump circuit system |
| CN107943184A (en) * | 2017-12-19 | 2018-04-20 | 聚辰半导体(上海)有限公司 | A kind of power supply generator on intelligent recognition chip |
| CN114675074A (en) * | 2022-04-13 | 2022-06-28 | 深圳市航顺芯片技术研发有限公司 | VDDA correction device and correction method of MCU |
| WO2024074032A1 (en) * | 2022-10-08 | 2024-04-11 | 武汉杰开科技有限公司 | Overshoot protection circuit and method and chip |
-
2010
- 2010-02-05 CN CN201019063038A patent/CN101763139A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102662424A (en) * | 2012-03-23 | 2012-09-12 | 上海信耀电子有限公司 | Precise voltage stabilizing circuit for singlechip |
| CN102710123A (en) * | 2012-06-07 | 2012-10-03 | 无锡市晶源微电子有限公司 | High-efficiency low-power consumption pulse energy conversion module |
| CN103838282A (en) * | 2014-03-19 | 2014-06-04 | 广州钧衡微电子科技有限公司 | Circuit for adjusting voltages based on temperature |
| CN103838282B (en) * | 2014-03-19 | 2016-02-10 | 广州钧衡微电子科技有限公司 | A kind of circuit based on temperature adjustment voltage |
| CN105138062A (en) * | 2014-05-29 | 2015-12-09 | 展讯通信（上海）有限公司 | System improving load regulation rate of low-pressure-difference linear voltage regulator |
| CN105305810A (en) * | 2014-05-29 | 2016-02-03 | 展讯通信（上海）有限公司 | Improved charge pump circuit system |
| CN104932601A (en) * | 2015-06-26 | 2015-09-23 | 华南理工大学 | Band-gap reference voltage source having high power supply rejection ratio |
| CN104932601B (en) * | 2015-06-26 | 2017-11-07 | 华南理工大学 | A kind of bandgap voltage reference of high PSRR |
| CN107943184A (en) * | 2017-12-19 | 2018-04-20 | 聚辰半导体(上海)有限公司 | A kind of power supply generator on intelligent recognition chip |
| CN114675074A (en) * | 2022-04-13 | 2022-06-28 | 深圳市航顺芯片技术研发有限公司 | VDDA correction device and correction method of MCU |
| WO2024074032A1 (en) * | 2022-10-08 | 2024-04-11 | 武汉杰开科技有限公司 | Overshoot protection circuit and method and chip |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140514 |
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Application publication date: 20100630 |