CN101752480A - 一种氮化镓基led外延片及其生长方法 - Google Patents
一种氮化镓基led外延片及其生长方法 Download PDFInfo
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102185052A (zh) * | 2011-05-05 | 2011-09-14 | 中国科学院半导体研究所 | 调制掺杂的氮化镓系发光二极管的制作方法 |
CN102364706A (zh) * | 2011-11-17 | 2012-02-29 | 扬州中科半导体照明有限公司 | 一种发光二极管的外延生产方法 |
CN102412351A (zh) * | 2011-10-27 | 2012-04-11 | 华灿光电股份有限公司 | 提高ESD的复合n-GaN层结构的制备方法 |
CN103022285A (zh) * | 2013-01-10 | 2013-04-03 | 合肥彩虹蓝光科技有限公司 | 一种提高led亮度的多量子阱层生长方法 |
CN107331738A (zh) * | 2017-05-12 | 2017-11-07 | 华灿光电股份有限公司 | 一种发光二极管外延片的制造方法 |
CN109037410A (zh) * | 2018-08-10 | 2018-12-18 | 厦门乾照光电股份有限公司 | 发光二极管的半导体芯片及其电流扩展层和制造方法 |
CN109216518A (zh) * | 2017-06-30 | 2019-01-15 | 苏州新纳晶光电有限公司 | 抗静电led芯片制备方法及其应用 |
CN109545919A (zh) * | 2018-11-09 | 2019-03-29 | 西安电子科技大学 | n型AlGaN层调制掺杂的高效紫外发光二极管及制备方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US6838705B1 (en) * | 1999-03-29 | 2005-01-04 | Nichia Corporation | Nitride semiconductor device |
CN100524850C (zh) * | 2004-09-23 | 2009-08-05 | 璨圆光电股份有限公司 | 氮化镓发光二极管结构 |
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102185052A (zh) * | 2011-05-05 | 2011-09-14 | 中国科学院半导体研究所 | 调制掺杂的氮化镓系发光二极管的制作方法 |
CN102412351A (zh) * | 2011-10-27 | 2012-04-11 | 华灿光电股份有限公司 | 提高ESD的复合n-GaN层结构的制备方法 |
CN102412351B (zh) * | 2011-10-27 | 2016-06-22 | 华灿光电股份有限公司 | 提高ESD的复合n-GaN层结构的制备方法 |
CN102364706A (zh) * | 2011-11-17 | 2012-02-29 | 扬州中科半导体照明有限公司 | 一种发光二极管的外延生产方法 |
CN103022285A (zh) * | 2013-01-10 | 2013-04-03 | 合肥彩虹蓝光科技有限公司 | 一种提高led亮度的多量子阱层生长方法 |
CN103022285B (zh) * | 2013-01-10 | 2015-02-04 | 合肥彩虹蓝光科技有限公司 | 一种提高led亮度的多量子阱层生长方法 |
CN107331738A (zh) * | 2017-05-12 | 2017-11-07 | 华灿光电股份有限公司 | 一种发光二极管外延片的制造方法 |
CN107331738B (zh) * | 2017-05-12 | 2019-12-06 | 华灿光电股份有限公司 | 一种发光二极管外延片的制造方法 |
CN109216518A (zh) * | 2017-06-30 | 2019-01-15 | 苏州新纳晶光电有限公司 | 抗静电led芯片制备方法及其应用 |
CN109037410A (zh) * | 2018-08-10 | 2018-12-18 | 厦门乾照光电股份有限公司 | 发光二极管的半导体芯片及其电流扩展层和制造方法 |
CN109545919A (zh) * | 2018-11-09 | 2019-03-29 | 西安电子科技大学 | n型AlGaN层调制掺杂的高效紫外发光二极管及制备方法 |
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CN101752480B (zh) | 2011-06-29 |
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