CN101751982B - 闪存存储装置中闪存控制器与闪存芯片之间的连接方法 - Google Patents
闪存存储装置中闪存控制器与闪存芯片之间的连接方法 Download PDFInfo
- Publication number
- CN101751982B CN101751982B CN200810243699.9A CN200810243699A CN101751982B CN 101751982 B CN101751982 B CN 101751982B CN 200810243699 A CN200810243699 A CN 200810243699A CN 101751982 B CN101751982 B CN 101751982B
- Authority
- CN
- China
- Prior art keywords
- flash
- data
- controller
- chip
- flash memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000015654 memory Effects 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims abstract description 17
- 230000005540 biological transmission Effects 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 4
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 6
- 230000005055 memory storage Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 2
- 241001269238 Data Species 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000000155 isotopic effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200810243699.9A CN101751982B (zh) | 2008-12-12 | 2008-12-12 | 闪存存储装置中闪存控制器与闪存芯片之间的连接方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200810243699.9A CN101751982B (zh) | 2008-12-12 | 2008-12-12 | 闪存存储装置中闪存控制器与闪存芯片之间的连接方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101751982A CN101751982A (zh) | 2010-06-23 |
CN101751982B true CN101751982B (zh) | 2014-08-13 |
Family
ID=42478816
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200810243699.9A Active CN101751982B (zh) | 2008-12-12 | 2008-12-12 | 闪存存储装置中闪存控制器与闪存芯片之间的连接方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101751982B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111916135A (zh) * | 2019-05-10 | 2020-11-10 | 北京兆易创新科技股份有限公司 | 一种芯片 |
WO2021012767A1 (zh) * | 2019-07-22 | 2021-01-28 | 苏州库瀚信息科技有限公司 | 用于存储器控制器与存储器设备互连的总线 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6769087B2 (en) * | 2000-04-11 | 2004-07-27 | Kabushiki Kaisha Toshiba | Data storage device and method for controlling the device |
CN101241769A (zh) * | 2007-02-08 | 2008-08-13 | 三星电子株式会社 | 可修复半导体存储器件及其修复方法 |
CN101308698A (zh) * | 2007-05-14 | 2008-11-19 | 巴比禄股份有限公司 | 存储装置 |
-
2008
- 2008-12-12 CN CN200810243699.9A patent/CN101751982B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6769087B2 (en) * | 2000-04-11 | 2004-07-27 | Kabushiki Kaisha Toshiba | Data storage device and method for controlling the device |
CN101241769A (zh) * | 2007-02-08 | 2008-08-13 | 三星电子株式会社 | 可修复半导体存储器件及其修复方法 |
CN101308698A (zh) * | 2007-05-14 | 2008-11-19 | 巴比禄股份有限公司 | 存储装置 |
Also Published As
Publication number | Publication date |
---|---|
CN101751982A (zh) | 2010-06-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8606988B2 (en) | Flash memory control circuit for interleavingly transmitting data into flash memories, flash memory storage system thereof, and data transfer method thereof | |
US9626327B2 (en) | Memory device for a hierarchical memory architecture | |
US7937523B2 (en) | Memory system with nonvolatile semiconductor memory | |
US8386699B2 (en) | Method for giving program commands to flash memory for writing data according to a sequence, and controller and storage system using the same | |
EP2301034B1 (en) | Fast, low-power reading of data in a flash memory | |
US20160246514A1 (en) | Memory system | |
US10838653B2 (en) | Electronic device and operating method thereof | |
CN105528299B (zh) | 读取命令排程方法以及使用该方法的装置 | |
US10902928B2 (en) | Memory system, operation method thereof, and nonvolatile memory device | |
CN101751981B (zh) | 闪存存储装置中保护数据安全的方法 | |
CN207008602U (zh) | 一种基于NandFlash存储器多通道的存储阵列控制装置 | |
CN114078523A (zh) | 存储器系统和包括在其中的存储器装置的操作方法 | |
CN110047547A (zh) | 数据储存装置、其操作方法和非易失性存储器件 | |
US10754768B2 (en) | Memory system using descriptor lookup tables to access setting information for a non-volatile memory, and an operating method thereof | |
KR20200029085A (ko) | 데이터 저장 장치 및 동작 방법, 이를 포함하는 스토리지 시스템 | |
CN110174995A (zh) | 存储器控制器及其操作方法 | |
US11461238B2 (en) | Storage device, memory controller, and method for fetching write commands from submission queues to perform full page writes | |
CN101751982B (zh) | 闪存存储装置中闪存控制器与闪存芯片之间的连接方法 | |
US20150161038A1 (en) | System and Method of Operation for High Capacity Solid-State Drive | |
CN201374192Y (zh) | 闪存存储装置 | |
KR20200067038A (ko) | 데이터 저장 장치 및 동작 방법, 이를 포함하는 스토리지 시스템 | |
US11157401B2 (en) | Data storage device and operating method thereof performing a block scan operation for checking for valid page counts | |
CN109933282B (zh) | 存储器系统及其操作方法 | |
KR102559537B1 (ko) | 메모리 컨트롤러, 이를 포함하는 데이터 저장 장치 및 스토리지 시스템 | |
TWI537726B (zh) | 資料讀取方法、快閃記憶體控制器與儲存系統 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20170223 Address after: Pudong New Area Zhangjiang hi tech road 201203 Shanghai City No. 1158 Zhang No. 2 Building 7 floor Patentee after: Brite Semiconductor (Shanghai) Corporation Address before: Suzhou City, Jiangsu province 215021 international science and Technology Park No. 1355 Jinji Lake Avenue Suzhou industrial park two D102-2 Patentee before: Suzhou Liangzhi Technology Co., Ltd. |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Connection method between flesh memory controller and flesh memory chip in flesh memory storing device Effective date of registration: 20180420 Granted publication date: 20140813 Pledgee: Wick International Holding Co., Ltd. Pledgor: Brite Semiconductor (Shanghai) Corporation Registration number: 2018310000019 |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20190416 Granted publication date: 20140813 Pledgee: Wick International Holding Co., Ltd. Pledgor: Brite Semiconductor (Shanghai) Corporation Registration number: 2018310000019 |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 201200 6th floor, building 2, Lide international, 1158 Zhangdong Road, Pudong New Area pilot Free Trade Zone, Shanghai Patentee after: Canxin semiconductor (Shanghai) Co.,Ltd. Address before: 201203 7th floor, building 2, 1158 Zhangdong Road, Zhangjiang hi tech, Pudong New Area, Shanghai Patentee before: BRITE SEMICONDUCTOR (SHANGHAI) Corp. |