CN101740462A - Manufacturing method of shallow trench isolation structure - Google Patents
Manufacturing method of shallow trench isolation structure Download PDFInfo
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- CN101740462A CN101740462A CN200810227180A CN200810227180A CN101740462A CN 101740462 A CN101740462 A CN 101740462A CN 200810227180 A CN200810227180 A CN 200810227180A CN 200810227180 A CN200810227180 A CN 200810227180A CN 101740462 A CN101740462 A CN 101740462A
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Abstract
The invention relates to a manufacturing method of a shallow trench isolation structure, which comprises the following steps of: providing a substrate and sequentially arranging a pad silicon oxide layer and a hard mask layer on the substrate; arranging a trench in the substrate and respectively arranging an opening at the positions in the pad silicon oxide layer and the hard mask layer corresponding to the trench; executing a wet-oxygen oxidation process and forming a pad silicon oxide layer at the bottom and the side wall of the trench; forming a dielectric layer on the pad silicon oxide layer and the hard mask layer in the trench; and removing the dielectric layer on the hard mask layer and the hard mask layer. The invention can improve the thickness consistency of the pad silicon oxide layer in the shallow trench isolation structure.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of manufacture method of fleet plough groove isolation structure.
Background technology
Along with semiconductor fabrication to high-tech node development, in the semiconductor integrated circuit isolation technology of device and device also by original silicon carrying out local oxide isolation (Local Oxidation of Silicon, LOCOS) develop into shallow trench isolation from.Fleet plough groove isolation structure is by forming groove on Semiconductor substrate, and the technology of filled media material forms in groove, for example, publication number be the Chinese patent application file of CN1649122A disclose a kind of shallow trench isolation from manufacture method.Fig. 1 to Fig. 5 be the disclosed shallow trench isolation of described Chinese patent application file from each step corresponding structure generalized section of manufacture method.
As shown in Figure 1, Semiconductor substrate 12 is provided, on described Semiconductor substrate 12, form pad silicon oxide layer 12A, then on described pad silicon oxide layer 12A, form silicon nitride layer as first hard mask layer 14, on described first hard mask layer 14, form the second hard mask layer 14B, on the described second hard mask layer 14B, form photoresist layer 16A, and the described photoresist layer 16A of patterning forms the opening 16B that the described second hard mask layer 14B is exposed in the bottom.
As shown in Figure 2, the second hard mask layer 14B of the described opening 16B of etching bottom, first hard mask layer 14 and pad silicon oxide layer 12A form opening 16C, and the surface of described Semiconductor substrate 12 is exposed in the bottom of described opening 16C.
As shown in Figure 3, remove described photoresist layer 16A, the Semiconductor substrate 12 of the described opening 16C of etching bottom forms groove 18 in described Semiconductor substrate 12, and forms pad silicon oxide layer 20 on described groove 18 surfaces.
As shown in Figure 4, filling oxide layer 22 in described groove 18 is removed the described second hard mask layer 14B by cmp then and is gone up unnecessary oxide layer 22 and the described second hard mask layer 14B.
As shown in Figure 5, first hard mask layer 14 as described in removing by wet etching (as phosphoric acid), and remove described pad silicon oxide layer 12A by hydrofluoric acid solution.
In the above-mentioned method, pad silicon oxide layer 20 is general by the formation of furnace oxidation technology, and, problem for the depression of the fleet plough groove isolation structure top that improve to form, yet, because the uniformity of pad silicon oxide layer 20 thicknesses of layers that furnace oxidation technology forms is relatively poor, cause the spreadability of the sidewall of groove 18 relatively poorly, make the decreased performance of the fleet plough groove isolation structure that forms.
Summary of the invention
The invention provides a kind of formation method of fleet plough groove isolation structure, to solve the relatively poor problem of thickness evenness of the pad silicon oxide layer that forms in the formation method that has fleet plough groove isolation structure now.
The manufacture method of a kind of fleet plough groove isolation structure provided by the invention comprises:
Substrate is provided, on described substrate, has pad silicon oxide layer and hard mask layer successively; In described substrate, have groove, in described pad silicon oxide layer and hard mask layer, have opening with the corresponding position of groove;
Carry out wet-oxygen oxidation technology, in the bottom and the sidewall formation pad silicon oxide layer of described groove;
Form dielectric layer on pad silicon oxide layer in described groove and the described hard mask layer;
Remove dielectric layer and described hard mask layer on the described hard mask layer.
Optionally, described wet-oxygen oxidation technology is that original position steam produces oxidation.
Optionally, before carrying out oxidation technology, comprise that also hard mask layer returns carving technology, so that the opening live width in the described hard mask layer increases.
Optionally, also comprise:
Before described hard mask layer returns carving technology, in the step of described trenched side-wall and bottom formation protective layer; And
After described hard mask layer returns carving technology, before the wet-oxygen oxidation technology, remove the step of described protective layer.
Optionally, described protective layer is a sacrificial silicon oxide layer.
Optionally, the method for formation sacrificial silicon oxide layer is a dry-oxygen oxidation technology.
Optionally, described dry-oxygen oxidation technology comprises furnace oxidation technology.
Optionally, the technology of removing described sacrificial silicon oxide layer is wet etching, and etching solution is a hydrofluoric acid solution.
Optionally, described hard mask layer is a silicon nitride, and described time carving technology is wet etching.
Compared with prior art, in the technique scheme has the following advantages at least:
In the wet-oxygen oxidation technology, with the oxygen of pasc reaction is to be decomposed by steam to form, the oxygen that decomposes by steam has higher activity, can be fast and pasc reaction generate silicon oxide layer, and oxygen can penetrate surface oxidation silicon layer and inner pasc reaction, thereby can form consistency of thickness silica preferably, can improve the consistency of thickness of the pad silicon oxide layer of formation, thereby can improve the adhesion characteristics between the substrate of the dielectric layer of filling in the subsequent step and channel bottom and sidewall; In addition, the pad silicon oxide layer that wet-oxygen oxidation technology forms can effectively be protected the substrate of the top of groove, avoids the top of this groove of damage in the technology of follow-up filled media layer, avoids forming the weakness defective.Can improve the stability of semiconductor device of formation.
Another one in the technique scheme has the following advantages at least:
Before this hard mask layer of execution returns carving technology; at first form protective layer at trenched side-wall and bottom; return unaffected or damage in the carving technology with the protection silicon substrate at hard mask layer; finishing hard mask layer returns after the carving technology; remove described protective layer again; and then carry out described wet-oxygen oxidation technology; not only can form consistency of thickness pad silicon oxide layer preferably; can also improve at hard mask layer and return in the carving technology damage problem trenched side-wall and substrate of bottom portion; help forming the fleet plough groove isolation structure of stable performance, thereby can improve the electrical stability of the semiconductor device of formation.
Description of drawings
Fig. 1 to Fig. 5 be existing a kind of shallow trench isolation from each step corresponding structure generalized section of manufacture method;
Fig. 6 is the flow chart of first embodiment of the manufacture method of fleet plough groove isolation structure of the present invention;
Fig. 7 to Figure 11 is the generalized section of each step corresponding construction of first embodiment of the manufacture method of fleet plough groove isolation structure of the present invention;
Figure 12 is the electron scanning micrograph of the pad silicon oxide layer that forms of the manufacture method of prior art and fleet plough groove isolation structure of the present invention;
Figure 13 is the flow chart of second embodiment of the manufacture method of fleet plough groove isolation structure of the present invention;
Figure 14 to Figure 17 is the generalized section of each step corresponding construction of second embodiment of the manufacture method of fleet plough groove isolation structure of the present invention.
Embodiment
Below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.
A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention is not subjected to the restriction of following public concrete enforcement.
Secondly, the present invention utilizes schematic diagram to be described in detail, when the embodiment of the invention is described in detail in detail; for ease of explanation; the profile of expression device architecture can be disobeyed general ratio and be done local the amplification, and described schematic diagram is example, and it should not limit the scope of protection of the invention at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
In the manufacturing process of fleet plough groove isolation structure, in the groove of substrate, before the metallization medium layer, need elder generation to form pad silicon oxide layer at the bottom and the sidewall of groove.The technology of the pad silicon oxide layer of existing formation is generally dry-oxygen oxidation technology, and its cardinal principle is directly to feed reaction to use oxygen in reaction chamber, at high temperature makes the pasc reaction of oxygen and channel bottom and sidewall then, forms silica.Yet; this method usually can cause the consistency of thickness of silicon oxide layer of formation relatively poor; particularly along with the development of semiconductor integrated circuit to the direction of littler live width; the degree of depth of the groove in the fleet plough groove isolation structure and increase in density make that the relatively poor problem of the consistency of thickness of the pad silicon oxide layer that dry-oxygen oxidation forms is serious day by day.This binding ability that can cause being deposited on dielectric layer in the groove and trenched side-wall or substrate of bottom portion descends the characteristic of the semiconductor device that influence forms.
Based on this, the present invention proposes a kind of manufacture method of fleet plough groove isolation structure, in the method, form pad silicon oxide layer by wet-oxygen oxidation technology at the bottom and the sidewall of groove, to improve the consistency of the pad silicon oxide layer thickness that forms, then, filled media layer in groove forms fleet plough groove isolation structure.By the consistency of thickness of wet-oxygen oxidation technology raising pad silicon oxide layer, thus the adhesion characteristics between the substrate of the dielectric layer that raising is filled and channel bottom and sidewall; In addition, the pad silicon oxide layer that wet-oxygen oxidation technology forms can effectively be protected the substrate of the top of groove, avoids the top of this groove of damage in the technology of follow-up filled media layer, avoids forming weakness defective (weak point).Can improve the stability of semiconductor device of formation.
Fig. 6 is the flow chart of first embodiment of the manufacture method of fleet plough groove isolation structure of the present invention.
Please refer to Fig. 6, step S100 provides substrate, has pad silicon oxide layer and hard mask layer on described substrate successively; In described substrate, have groove, in described pad silicon oxide layer and hard mask layer, have opening with the corresponding position of groove.
Step S110 carries out wet-oxygen oxidation technology, in the bottom and the sidewall formation pad silicon oxide layer of described groove.
Step S120 forms dielectric layer on pad silicon oxide layer in described groove and the described hard mask layer.
Step S130 removes dielectric layer and described hard mask layer on the described hard mask layer.
Below in conjunction with embodiment the manufacture method of fleet plough groove isolation structure of the present invention is described in detail.
Fig. 7 to Figure 11 is the generalized section of each step corresponding structure of first embodiment of the manufacture method of fleet plough groove isolation structure of the present invention.Should be noted that the explanation to some ins and outs is only introduced in order to be more readily understood method of the present invention in the following description, it should not limit the protection range of claim of the present invention improperly.Those skilled in the art can make corresponding modification, change and replacement according to the instruction of specification of the present invention and embodiment.
Please refer to Fig. 7, substrate 100 is provided, described substrate 100 can be a semi-conducting material, for example be a kind of in monocrystalline silicon, polysilicon, the amorphous silicon, described substrate 100 also can be a kind of in silicon Germanium compound, the silicon gallium compound, described substrate 100 can comprise silicon on epitaxial loayer or the insulating barrier (Silicon On Insulator, SOI) structure.
Described substrate 100 surfaces are cleaned, removed impurity particle or other pollutant on described substrate 100 surfaces.On described substrate 100, form pad silicon oxide layer 110.
Wherein, the method that forms described pad silicon oxide layer 110 can be that high temperature furnace pipe oxidation, rapid thermal oxidation, original position steam produce a kind of in the oxidizing process, and as an example, the thickness of described pad silicon oxide layer 110 can be for 5 to 40nm.
Described pad silicon oxide layer 110 can be used as the sticking and layer between the hard mask layer that forms in the subsequent technique and substrate 100 surfaces, is used to increase the adhesion property between described hard mask layer and substrate 100 surfaces; Also can the described hard mask layer of balance and described substrate 100 surfaces between stress.In a further embodiment, certainly, described pad silicon oxide layer 110 also can form for example chemical vapour deposition (CVD) by other method.
Then, form hard mask layer 120 on described pad silicon oxide layer 110, described hard mask layer 120 can be a silicon nitride; Its thickness can be for 50 to 300nm; The method that forms described hard mask layer 120 can be chemical vapour deposition (CVD) or ald, also can be other method or step.Described hard mask layer 120 can be used as the hard mask of etching groove in substrate 100, also can be used as the layer that stops of cmp planarization behind the dielectric layer of filling in groove.In other embodiments, described hard mask layer 120 can be other material, and can be multilayer.
Please refer to Fig. 8, spin coating photoresist layer 130 on hard mask layer 120, and by exposure imaging technology formation channel patterns 140, the surface of hard mask layer 120 is exposed in the bottom of described channel patterns 140.
In other embodiments, before the described photoresist layer 130 of spin coating, can form the anti-reflecting layer (not shown) on hard mask layer 120, described anti-reflecting layer can be an inorganic material, for example silicon oxynitride, or organic material; And then form photoresist layer 130 on described anti-reflecting layer, and exposure imaging forms channel patterns 140.
Please refer to Fig. 9, the hard mask layer 120 of the described channel patterns of etching 140 bottoms and pad silicon oxide layer 110 form opening 150, and the surface of substrate 100 will be exposed in the bottom of described opening 150.Described etching is the anisotropic etching, for example is the plasma dry etching, and the etching gas of this plasma dry etching can be CF
4
Then, described opening 150 substrate of bottom portion 100 of etching form groove 160 in substrate 100.The method of etching groove 160 is the plasma dry etching, the etching gas that described plasma dry etching is selected for use will make the sidewall of described groove 160 comparatively smooth, has less silicon crystal lattice defective, and make the corner, bottom of described groove 160 comparatively level and smooth, described etching gas also will make described groove 160 sidewalls have the comparatively profile of inclination.As an example, the etching gas of described plasma dry etching can be Cl
2Or the mist of HBr or HBr and other gas, for example can be HBr, O
2With Cl
2Mist, or HBr, NF
3Mist with He.The degree of depth of the groove 160 that etching forms is by the time control of etching.
Wherein, etching forms the technology of described groove 160 and can carry out respectively in different etching apparatuss with the technology that etching forms described opening 150, also can in same etching apparatus, original position carry out, if original position is carried out the etching gas of twice etching and technological parameter difference; Original position carries out improving productive rate.If etching forms the technology of described groove 160 and carries out respectively in different etching apparatuss with the technology that etching forms described opening 150, can before etching forms described groove 160, remove described photoresist layer 130, also can after the etching of finishing described groove 160, remove described photoresist layer 130 by the oxygen gas plasma ashing; If original position is carried out, after the etching of finishing described groove 160, remove described photoresist layer 130.
Please refer to Figure 10, carry out oxidation technology, in the bottom and the sidewall formation pad silicon oxide layer 180 of described groove.
Before carrying out described oxidation technology, clean the surface (bottom and sidewall) of described groove 160 earlier with hydrofluoric acid solution.Cleaning by described hydrofluoric acid solution, can remove the natural oxidizing layer that described groove 160 surfaces generate, make described pad silicon oxide layer 180 as the comparatively stable interlayer of characteristic between the dielectric layer of Semiconductor substrate 100 and filling in described groove 160, and increase adhesiveness between the two, reduce device leakage current in the Semiconductor substrate 100 when work.
Described in addition hydrofluoric acid solution cleans the part pad silicon oxide layer 110 that also can remove described groove 160 top, make described pad silicon oxide layer sidewall a little contraction be arranged to described hard mask layer 120 bottoms, thereby the corner of described groove 160 top is exposed, when carrying out oxidation and generate described pad silicon oxide layer 180, can make the corner at the top of described groove 160 have comparatively level and smooth profile.Described level and smooth profile can reduce stress build up on the one hand, can reduce when device is worked charge carrier on the other hand and gather influence to opening feature.
Wherein, described oxidation technology is a wet-oxygen oxidation, in the wet-oxygen oxidation technology, steam is fed in the reaction chamber, steam is decomposed into hydrogen and oxygen under the high temperature, and the pasc reaction of oxygen and trenched side-wall and bottom generates silica, and this silica promptly forms pad silicon oxide layer 180.
In existing dry-oxygen oxidation technology, reacting gas is an oxygen, carrying out along with reaction, the trenched side-wall that contacts with oxygen and the silicon of lower surface at first with oxygen reaction, generate the surface oxidation silicon layer, and because the activity of oxygen is lower, the surface oxidation silicon layer can stop or slow down the further pasc reaction below this surface oxidation silicon layer of oxygen, the thickness of the surface oxidation silicon layer of diverse location can be variant, carrying out along with reaction, described difference can be increasing, thereby cause the pad silicon oxide layer consistency of thickness of formation relatively poor.
And in the wet-oxygen oxidation technology that present embodiment adopted, with the oxygen of pasc reaction is to be decomposed by steam to form, the oxygen that decomposes by steam has higher activity, can be fast and pasc reaction generate silicon oxide layer, and oxygen can penetrate surface oxidation silicon layer and inner pasc reaction, thereby can form consistency of thickness silica preferably, as pad silicon oxide layer 180.
In the specific embodiment therein, described wet-oxygen oxidation technology produces oxidation for original position steam.
Figure 12 is the electron scanning micrograph that existing furnace oxidation technology and the original position steam that adopts the foregoing description produce the pad silicon oxide layer of oxidation technology formation.As seen from Figure 12, adopt furnace oxidation technology can make the pad silicon oxide layer of groove top, have consistency of thickness preferably (please refer to the part that the photo dotted circle on the right side among Figure 12 marks) and adopt original position steam to produce pad silicon oxide layer that oxidation technology forms than thinner (please refer to the part that the photo dotted circle in the left side among Figure 12 marks) in other zone.
Form after the described pad silicon oxide layer 180, in described groove 160, recharge dielectric layer 190, as shown in figure 11, the method of filling can be those skilled in the art's high density plasma CVDs known, and can promptly form fleet plough groove isolation structure in conjunction with the chemical mechanical milling tech planarization.
By above-mentioned wet-oxygen oxidation technology, can improve the consistency of thickness of the pad silicon oxide layer 180 of formation, thereby can improve the adhesion characteristics between the substrate of the dielectric layer of filling in the subsequent step and channel bottom and sidewall; In addition, the pad silicon oxide layer 180 that wet-oxygen oxidation technology forms can effectively be protected the substrate of the top of groove 160, avoids the top of this groove 160 of damage in the technology of follow-up filled media layer, avoids forming the weakness defective.Can improve the stability of semiconductor device of formation.
In addition, after forming described groove 160, can also comprise that hard mask layer returns carving technology, to improve the depression defect (divot defect) of the fleet plough groove isolation structure top that forms, for example, when hard mask layer is silicon nitride, return the wet-etching technology that carving technology adopts phosphoric acid.
Yet, because wet-oxygen oxidation has stronger oxidizability, in the silicon of oxidation trenched side-wall and bottom, also can the described hard mask layer of oxidation surface, when for example hard mask layer is silicon nitride, can form silicon oxynitride layer in silicon nitride surface.When adopting wet-oxygen oxidation technology to form pad silicon oxide layer, can form silicon oxynitride layer on the hard mask layer surface of silicon nitride material simultaneously, this can influence silicon nitride and return carving technology.Thereby silicon nitride returns carving technology and need carry out before wet-oxygen oxidation technology.But, return carving technology and before wet-oxygen oxidation technology, carry out again and can cause damage the trenched side-wall of exposure and the silicon substrate of bottom.Based on this, in the second embodiment of the present invention, a kind of manufacture method of fleet plough groove isolation structure is proposed, can be applicable to comprise in the shallow ditch groove separation process that hard mask layer returns carving technology, not only can improve the consistency of thickness of the pad silicon oxide layer of formation, can also avoid returning and damage silicon substrate in the carving technology at hard mask layer.
In second embodiment of the manufacture method of fleet plough groove isolation structure of the present invention, the method that forms pad silicon oxide layer still adopts wet-oxygen oxidation technology, and hard mask layer returns carving technology and carried out before described wet-oxygen oxidation technology.Different is; before this hard mask layer of execution returns carving technology; at first form protective layer at trenched side-wall and bottom; return unaffected or damage in the carving technology with the protection silicon substrate at hard mask layer; finishing hard mask layer returns after the carving technology; remove described protective layer again, and then carry out described wet-oxygen oxidation technology.
Figure 13 is the flow chart of second embodiment of fleet plough groove isolation structure of the present invention.
Please refer to Figure 13, step S200 has pad silicon oxide layer and hard mask layer successively for substrate is provided on described substrate; In described substrate, have groove, in described pad silicon oxide layer and hard mask layer, have opening with the corresponding position of groove.
Step S210 forms protective layer at described trenched side-wall and bottom.
Step S220 carries out hard mask layer and returns carving technology, makes the live width of the opening in the hard mask layer increase.
Step S230 removes described protective layer.
Step S240 carries out oxidation technology, and in the bottom and the sidewall formation pad silicon oxide layer of described groove, wherein, described oxidation technology is a wet-oxygen oxidation.
Step S250 forms dielectric layer on pad silicon oxide layer in described groove and the described hard mask layer.
Step S260 removes dielectric layer and described hard mask layer on the described hard mask layer.
Second embodiment to fleet plough groove isolation structure of the present invention is described in detail below in conjunction with generalized section.Should be noted that the explanation to some ins and outs is only introduced in order to be more readily understood method of the present invention in the following description, it should not limit the protection range of claim of the present invention improperly.Those skilled in the art can make corresponding modification, change and replacement according to the instruction of specification of the present invention and embodiment.
Please refer to Figure 14, substrate 500 is provided, on described substrate 500, be formed with pad silicon oxide layer 510 and hard mask layer 520 successively.In described substrate 500, have groove 560, in described pad silicon oxide layer 510 and hard mask 520, have opening (not sign) with described groove 560 relevant positions.
Wherein, described hard mask layer 520 can be a silicon nitride.
The method that forms structure shown in Figure 14 can be the processing step of describing among above-mentioned first embodiment, the material of structure shown in Figure 14 can be identical with the above-mentioned described structure of first embodiment Fig. 9, certainly, also can adopt other technology or material to form structure shown in Figure 14, repeat no more here.
Please refer to Figure 15, form protective layer 565 in described groove 560 bottoms and sidewall.Wherein, the technological requirement that forms described protective layer 565 can not influence follow-up hard mask layer and return carving technology when forming described protective layer 565, and after finishing described time carving technology; can be removed and do not influence structure shown in Figure 14, perhaps less to structure influence shown in Figure 14.
As an example, described protective layer 565 can be a sacrificial silicon oxide layer.It can form by dry-oxygen oxidation technology, and concrete, described dry-oxygen oxidation technology can be furnace oxidation technology.Described protective layer 565 also can be other material.
Then, please refer to Figure 16, carry out hard mask layer and return carving technology, the live width of the opening in the described hard mask layer 520 is increased.520 times carving technologies of this hard mask layer mainly are the problems that is used to improve the shallow trench isolation structure top marginal trough of formation, certainly, also can be used for other purpose.
As an example; described hard mask layer 520 is a silicon nitride; returning carving technology is the wet-etching technology of phosphoric acid solution; in this time carving technology; because the described groove 560 of matcoveredn 565 protections; thereby phosphoric acid solution can not damage silicon substrate, particularly can not form weakness (weak point) defective in groove 560 top.
As shown in figure 17, finish after 520 times carving technologies of described hard mask layer, remove described protective layer 565.For example when described protective layer 565 is sacrificial silicon oxide layer, can adopt hydrofluoric acid solution to remove described protective layer 565, repeat no more here.
Then, carry out oxidation technology, form pad silicon oxide layer 580 at described groove 560 sidewalls and bottom, and in described groove 560 the filled media layer, remove dielectric layer on the described hard mask layer 520 by cmp then, keep the dielectric layer 590 in the described groove 560.Wherein, the technology of described pad silicon oxide layer 580 is wet-oxygen oxidation, and technology that it is concrete and principle can be identical with described first embodiment, repeat no more here.The technology of wherein said filled media layer and cmp also can be identical with described first embodiment.Here be not described in detail.
By described second embodiment, not only can form consistency of thickness pad silicon oxide layer preferably, can also improve at hard mask layer and return in the carving technology damage problem trenched side-wall and substrate of bottom portion, help forming the fleet plough groove isolation structure of stable performance, thereby can improve the electrical stability of the semiconductor device of formation.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (9)
1. the manufacture method of a fleet plough groove isolation structure is characterized in that, comprising:
Substrate is provided, on described substrate, has pad silicon oxide layer and hard mask layer successively; In described substrate, have groove, in described pad silicon oxide layer and hard mask layer, have opening with the corresponding position of groove;
Carry out wet-oxygen oxidation technology, in the bottom and the sidewall formation pad silicon oxide layer of described groove;
Form dielectric layer on pad silicon oxide layer in described groove and the described hard mask layer;
Remove dielectric layer and described hard mask layer on the described hard mask layer.
2. the manufacture method of fleet plough groove isolation structure as claimed in claim 1 is characterized in that: described wet-oxygen oxidation technology is that original position steam produces oxidation.
3. the manufacture method of fleet plough groove isolation structure as claimed in claim 1 is characterized in that: before carrying out oxidation technology, comprise that also hard mask layer returns carving technology, so that the opening live width in the described hard mask layer increases.
4. the manufacture method of fleet plough groove isolation structure as claimed in claim 3 is characterized in that, also comprises:
Before described hard mask layer returns carving technology, in the step of described trenched side-wall and bottom formation protective layer; And
After described hard mask layer returns carving technology, before the wet-oxygen oxidation technology, remove the step of described protective layer.
5. the manufacture method of fleet plough groove isolation structure as claimed in claim 4, it is characterized in that: described protective layer is a sacrificial silicon oxide layer.
6. the manufacture method of fleet plough groove isolation structure as claimed in claim 5 is characterized in that: the method that forms sacrificial silicon oxide layer is a dry-oxygen oxidation technology.
7. the manufacture method of fleet plough groove isolation structure as claimed in claim 6, it is characterized in that: described dry-oxygen oxidation technology comprises furnace oxidation technology.
8. the manufacture method of fleet plough groove isolation structure as claimed in claim 6, it is characterized in that: the technology of removing described sacrificial silicon oxide layer is wet etching, etching solution is a hydrofluoric acid solution.
9. as the manufacture method of the described fleet plough groove isolation structure of the arbitrary claim of claim 1 to 8, it is characterized in that: described hard mask layer is a silicon nitride, and described time carving technology is wet etching.
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| CN200810227180A CN101740462A (en) | 2008-11-24 | 2008-11-24 | Manufacturing method of shallow trench isolation structure |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102437033A (en) * | 2011-07-22 | 2012-05-02 | 上海华力微电子有限公司 | Method for avoiding damaging shallow trench isolation in high-dielectric-constant metal gate technique |
| CN104517887A (en) * | 2013-09-27 | 2015-04-15 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device production method |
| CN105655287B (en) * | 2016-04-07 | 2018-12-11 | 上海华力微电子有限公司 | The method of gradient pressure mode improvement film thickness homogeneity |
| CN111063733A (en) * | 2018-10-17 | 2020-04-24 | 长鑫存储技术有限公司 | Preparation method and structure of grid oxide layer and preparation method of grid |
-
2008
- 2008-11-24 CN CN200810227180A patent/CN101740462A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102437033A (en) * | 2011-07-22 | 2012-05-02 | 上海华力微电子有限公司 | Method for avoiding damaging shallow trench isolation in high-dielectric-constant metal gate technique |
| CN104517887A (en) * | 2013-09-27 | 2015-04-15 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device production method |
| CN105655287B (en) * | 2016-04-07 | 2018-12-11 | 上海华力微电子有限公司 | The method of gradient pressure mode improvement film thickness homogeneity |
| CN111063733A (en) * | 2018-10-17 | 2020-04-24 | 长鑫存储技术有限公司 | Preparation method and structure of grid oxide layer and preparation method of grid |
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Application publication date: 20100616 |