CN101719479B - 移送基板用托盘及具有该托盘的真空处理装置 - Google Patents
移送基板用托盘及具有该托盘的真空处理装置 Download PDFInfo
- Publication number
- CN101719479B CN101719479B CN2009102060063A CN200910206006A CN101719479B CN 101719479 B CN101719479 B CN 101719479B CN 2009102060063 A CN2009102060063 A CN 2009102060063A CN 200910206006 A CN200910206006 A CN 200910206006A CN 101719479 B CN101719479 B CN 101719479B
- Authority
- CN
- China
- Prior art keywords
- substrate
- flat part
- pallet
- handover
- frame portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 146
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 17
- 238000009434 installation Methods 0.000 claims description 16
- 238000009489 vacuum treatment Methods 0.000 claims description 15
- 230000007246 mechanism Effects 0.000 claims description 12
- 238000005192 partition Methods 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 4
- 239000007921 spray Substances 0.000 claims description 4
- 230000014759 maintenance of location Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 81
- 238000005530 etching Methods 0.000 description 38
- 238000000034 method Methods 0.000 description 7
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 6
- 229960000909 sulfur hexafluoride Drugs 0.000 description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 229910018503 SF6 Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000003758 nuclear fuel Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- -1 specifically Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67333—Trays for chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67356—Closed carriers specially adapted for containing chips, dies or ICs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting substrates others than wafers, e.g. chips
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080099070A KR20100040037A (ko) | 2008-10-09 | 2008-10-09 | 기판이송용 트레이 및 이를 구비한 진공처리장치 |
KR10-2008-0099070 | 2008-10-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101719479A CN101719479A (zh) | 2010-06-02 |
CN101719479B true CN101719479B (zh) | 2012-05-30 |
Family
ID=42216252
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009102060063A Expired - Fee Related CN101719479B (zh) | 2008-10-09 | 2009-10-09 | 移送基板用托盘及具有该托盘的真空处理装置 |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR20100040037A (zh) |
CN (1) | CN101719479B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102479878A (zh) * | 2010-11-19 | 2012-05-30 | 金元求 | 太阳能电池制造方法及根据该制造方法制造的太阳能电池 |
CN102479877A (zh) * | 2010-11-19 | 2012-05-30 | 金元求 | 太阳能电池制造装置及其系统及太阳能电池 |
CN103035507A (zh) * | 2011-09-29 | 2013-04-10 | 三菱电机株式会社 | 基板处理装置、基板处理方法以及太阳能电池的制造方法 |
KR101606705B1 (ko) | 2014-09-02 | 2016-03-28 | 비아이 이엠티 주식회사 | 기판 이송장치 |
KR101727125B1 (ko) | 2016-03-02 | 2017-04-14 | (주)지테크 | 기판 등간격 이송장치 |
CN110092344A (zh) * | 2019-05-16 | 2019-08-06 | 烟台睿创微纳技术股份有限公司 | 一种mems释放架、释放机台及mems组件释放的方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1400627A (zh) * | 2001-07-30 | 2003-03-05 | 旭硝子株式会社 | 薄膜 |
CN1950922A (zh) * | 2005-02-03 | 2007-04-18 | 应用材料股份有限公司 | 将溅射源和偏压功率频率施加到工件上的金属等离子体汽相沉积和再溅射的设备 |
CN101155463A (zh) * | 2006-09-29 | 2008-04-02 | 东京毅力科创株式会社 | 微波等离子体处理装置、电介质窗制造方法和微波等离子体处理方法 |
CN101251294A (zh) * | 2006-11-22 | 2008-08-27 | 空气装置公司 | 带有装接装置的可变容量基底板排送器 |
-
2008
- 2008-10-09 KR KR1020080099070A patent/KR20100040037A/ko not_active Application Discontinuation
-
2009
- 2009-10-09 CN CN2009102060063A patent/CN101719479B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1400627A (zh) * | 2001-07-30 | 2003-03-05 | 旭硝子株式会社 | 薄膜 |
CN1950922A (zh) * | 2005-02-03 | 2007-04-18 | 应用材料股份有限公司 | 将溅射源和偏压功率频率施加到工件上的金属等离子体汽相沉积和再溅射的设备 |
CN101155463A (zh) * | 2006-09-29 | 2008-04-02 | 东京毅力科创株式会社 | 微波等离子体处理装置、电介质窗制造方法和微波等离子体处理方法 |
CN101251294A (zh) * | 2006-11-22 | 2008-08-27 | 空气装置公司 | 带有装接装置的可变容量基底板排送器 |
Also Published As
Publication number | Publication date |
---|---|
KR20100040037A (ko) | 2010-04-19 |
CN101719479A (zh) | 2010-06-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101719479B (zh) | 移送基板用托盘及具有该托盘的真空处理装置 | |
US10229845B2 (en) | Substrate treatment apparatus | |
TWI620230B (zh) | 基底處理設備 | |
KR101119780B1 (ko) | 플라즈마 화학증착장치 | |
KR102329196B1 (ko) | 기판처리장치 및 이를 이용한 기판처리방법 | |
US20210082700A1 (en) | Apparatus and method for treating substrate | |
KR101478151B1 (ko) | 대면적 원자층 증착 장치 | |
KR20150138469A (ko) | 기판 처리장치 및 이의 세정방법 | |
KR20190134372A (ko) | 기판 처리 장치 및 방법 | |
KR101344930B1 (ko) | 기판처리장치 | |
KR101468599B1 (ko) | 플라즈마 처리장치 | |
KR20130015638A (ko) | 기판처리장치 | |
KR100738837B1 (ko) | 플라즈마화학증착 장치 | |
CN102430495A (zh) | 提高光刻胶膜与衬底表面粘合度的装置及其应用方法 | |
KR20090041488A (ko) | 돔이 형성된 디퓨저커버를 포함하는 기판처리장치 | |
KR20080035735A (ko) | 플라즈마 화학기상증착설비 | |
US20220285135A1 (en) | Substrate processing apparatus | |
KR20120047414A (ko) | 기판처리장치 및 그에 사용되는 커버부재 및 기판처리방법 | |
KR102444873B1 (ko) | 기판처리장치 및 이를 이용한 기판처리방법 | |
KR101728072B1 (ko) | 기판 처리 장치 및 이를 이용한 박막 형성 방법 | |
KR20090071003A (ko) | 원자층 증착 장치 | |
KR102681009B1 (ko) | 기판처리장치 | |
CN202259195U (zh) | 一种干法刻蚀坚硬无机材料基板的装置 | |
CN110016656B (zh) | 化学气相沉积腔室 | |
KR20120081772A (ko) | 가스 공급 장치, 가스 공급 방법 및 이를 구비하는 기판 처리 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: YUANYI IPS CO., LTD. Free format text: FORMER OWNER: JIN BINGJUN Effective date: 20120905 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20120905 Address after: Gyeonggi Do, South Korea Patentee after: WONIK IPS Co.,Ltd. Address before: Chungnam, South Korea Patentee before: Jin Bingjun |
|
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP03 | Change of name, title or address |
Address after: Gyeonggi Do Korea Pyeongtaek paint 78-40 (jije Dong strange street) Patentee after: Lap Yi Cmi Holdings Ltd. Address before: Gyeonggi Do, South Korea Patentee before: WONIK IPS Co.,Ltd. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20160726 Address after: South Korea Gyeonggi Do Ping Ze Zhenwei Zhenwei group produced 75 road surface Patentee after: WONIK IPS Co.,Ltd. Address before: Gyeonggi Do Korea Pyeongtaek paint 78-40 (jije Dong strange street) Patentee before: Lap Yi Cmi Holdings Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120530 Termination date: 20211009 |