CN101713099A - Silicon wafer for solar cell - Google Patents
Silicon wafer for solar cell Download PDFInfo
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- CN101713099A CN101713099A CN200910176612A CN200910176612A CN101713099A CN 101713099 A CN101713099 A CN 101713099A CN 200910176612 A CN200910176612 A CN 200910176612A CN 200910176612 A CN200910176612 A CN 200910176612A CN 101713099 A CN101713099 A CN 101713099A
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Abstract
The invention uses solar grade polysilicon prepared by silicon-melting method to perform polycrystalline ingoting or pulling to prepare single crystal, then the single crystal is processed to prepare the silicon wafers, and chips are prepared on the solar cell chip production technical line by using the obtained silicon wafers and the silicon wafers prepared by Siemens method. The invention provides a quality standard of the solar grade silicon wafer under the premise of ensuring that the measured parameters of chips are qualified.
Description
Technical field
The present invention relates to field of solar energy, be specifically related to a kind of silicon chip of solar cell and quality standard thereof.
Background technology
Sun power is human inexhaustible renewable energy source, and it does not produce any environmental pollution, is clean energy.U.S.'s Bell Laboratory had been developed the practical semiconductor solar cell of the first in the world piece in 1954.Since nearly half a century, people have paid huge effort for the research of solar cell.Polysilicon is the starting material of preparation solar cell, is the foundation stone of global electronic two industry and photovoltaic industry.It is to be refined by the lower metallurgical grade silicon of silicon purity, can be divided into solar energy level silicon (6N) and electronic-grade silicon (11N) according to silicone content purity.The silicon materials of past solar cell mainly from the off-specification material and the silicon single crystal of electronic-grade silicon expect end to end, pot bottom material etc., year supply is very little.Along with the fast development of photovoltaic industry, solar cell increases rapidly the demand of polysilicon, and the demand of solar-grade polysilicon in 2008 has surpassed electronic-grade polycrystalline silicon.
Along with the continuous rising of the exhausted day by day and oil price of traditional energy, and people are to the improving constantly of its own existence environmental requirement, and as free of contamination clean energy, solar cell will obtain swifter and more violent development.And as the crystal silicon solar battery that occupies solar cell overwhelming majority market now, its technology of preparing is being represented the technology of preparing level of whole solar cell industry always.
The principle of work of solar cell is: when solar irradiation was mapped on the solar cell, battery absorbed luminous energy, and generation light induced electron-hole is right.Under the built in field effect of battery, light induced electron and hole are separated, and the accumulation of heterocharge appears in photronic two ends, promptly produce " photovoltage ", and Here it is " photovoltaic effect ".If at the both sides of built in field extraction electrode and connect load, then just there be " photogenerated current " to flow through in the load, thereby obtain power output.Like this, the luminous energy of the sun has just directly become the electric energy that can be put to practicality.
The most important thing is photoelectric transformation efficiency in the performance of solar cell, how much luminous energy of promptly coming in has to be converted to electric energy.In the practicability solar cell, silicon metal is about 14～15%, amorphous silicon 7～8%.
Speak of the preparation of solar-grade polysilicon, silicon single crystal, all so that material, scrap stock, pot bottom material are as raw material end to end, its quality is one grade minimum in four class of semiconductor silicon material (detector grade, silicon controlled rectifier level, unicircuit level, solar battery grade) for it.
Before, mention the making solar-grade polysilicon, those skilled in the art associate the purity of polysilicon naturally should be in the above level of 6N (〉=99.9999%).But in the process of solar cell actual production, also has other index that need consider.The inventor herein through too much batch Experiment Preparation a kind of polysilicon that can be used for preparing solar battery chip, and adopt suitable parameter to define.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, and a kind of method for preparing silicon chip of solar cell is provided, and to the minimum standard of solar cell with the silicon chip quality, locatees.
The preparation method of a kind of silicon chip of solar cell of the present invention is characterized in that described raw material polysilicon purity reaches 〉=the 5N level, and boron content reaches inferior ppm level, and oxygen level is 5～8 * 10
17Cm
-3, carbon content≤5 * 10
16Cm
-3
Method of the present invention is characterized in that adopting the raw material polysilicon to be prepared into Φ 6 " and Φ 8 " silicon single-crystal, its dislocation desity≤500/cm
2, minority carrier life time reaches 10～20 microseconds; Wherein said raw material polysilicon purity reaches 〉=the 5N level, and boron content reaches inferior ppm level, and oxygen level is 5～8 * 10
17Cm
-3, carbon content≤5 * 10
16Cm
-3, minority carrier life time reaches 10～20 microseconds.
Method of the present invention, it is characterized in that adopting molten silicon method polysilicon or silicon single crystal to be prepared into solar battery chip, its optoelectronic transformation efficiency η: polysilicon is 13～14.5%, and silicon single crystal is 15.5～17.5%; Wherein said molten silicon fado crystal silicon purity reaches 〉=the 5N level, and boron content reaches inferior ppm level, and oxygen level is 5～8 * 10
17Cm
-3, carbon content≤5 * 10
16Cm
-3, the polysilicon chip minority carrier life time reaches 2 microseconds; The monocrystalline silicon piece minority carrier life time reaches 10～20 microseconds.
Method of the present invention is characterized in that adopting molten silicon method polysilicon or silicon single crystal to be prepared into solar battery chip, and polysilicon chip photoelectric attenuation rate α is 4～5%, and silicon single crystal wafer photoelectric attenuation rate α is 3.5～4.5%; Wherein said raw material polysilicon purity reaches 〉=the 5N level, and boron content reaches inferior ppm level, and oxygen level is 5～8 * 10
17Cm
-3, carbon content≤5 * 10
16Cm
-3, the polysilicon chip minority carrier life time reaches 2 microseconds; The monocrystalline silicon piece minority carrier life time reaches 10～20 microseconds.
Method of the present invention is characterized in that adopting molten silicon method polysilicon or silicon single crystal to be prepared into solar battery chip, and its open circuit voltage, short-circuit current, optimum operating voltage, recommended current, peak power output all meet the requirements; Wherein said raw material polysilicon purity reaches 〉=the 5N level, and boron content reaches inferior ppm level, and oxygen level is 5～8 * 10
17Cm
-3, carbon content≤5 * 10
16Cm
-3, the polysilicon chip minority carrier life time reaches 2 microseconds; The monocrystalline silicon piece minority carrier life time reaches 10～20 microseconds.
The quality standard of solar-grade polysilicon is that molten silicon legal system is equipped with the problem that solar-grade polysilicon at first will solve.As everyone knows, solar chip manufacturing silicon chip adopts electronic-grade silicon to expect end to end mostly or pot bottom material is done raw material, be in the semiconductor silicon material (detector grade, silicon controlled rectifier level, unicircuit level, solar battery grade) class is minimum one grade.The present patent application people finds the solar battery chip of the polysilicon preparation of the above-mentioned quality standard of employing through experiment repeatedly, and its photoelectric transformation efficiency, rate of fall-off, chip electrical parameter all can reach the ordinary production level.
The present application people uses three batches of experiment polysilicons of above-mentioned quality standard, and " vertical pulling silicon after cutting mill processing, thermal treatment, drops into the production line that solar chip is made, and the silicon chip that uses with routine carries out the battery chip manufacturing simultaneously to be drawn into Φ 6.Owing to be the flows simultaneously of two kinds of silicon chips, got rid of the influence of technology.The chip of last two kinds of silicon wafer to manufacture carries out the contrast of photoelectric transformation efficiency, photoelectric attenuation rate and chip main electric parameters.Its result shows photoelectric transformation efficiency (η), photoelectric attenuation rate (α), two kinds of silicon chips and indifference.Concrete testing data is as follows:
The average η in η=15.5～17.5%=16.5%
α=3.5～5.5% average alpha=4.5%
Chip main electric parameters open circuit voltage (V
OC), short-circuit current (I
SC), optimum operating voltage (V
m), recommended current (I
m), peak power output (P
m), packing factor etc. is all within specialized range.
Two groups of experiments are as follows with the situation of silicon chip:
First group: A. is from the Czochralski silicon wafer of external Bell Laboratory import;
B. the Czochralski silicon wafer that domestic first factory produces.
Second group: crystal silicon more than domestic second station-service tradition Siemens Method is produced, prepare silicon single-crystal by third factory, be processed into silicon chip.
The 3rd group: domestic fourth factory prepares unicircuit with the material end to end of silicon single-crystal production, the silicon single-crystal of pot bottom material preparation, is processed into silicon chip.Three groups of experiment polysilicon foreign matter contents see Table 1.
Three groups of experiments of table 1 silicon chip foreign matter content
Embodiment
Embodiment 1
The polycrystalline ingot casting
The solar-grade polysilicon of institute of the present invention upgrading amount standard places in the square high-purity silica pot after burn into cleans, and melts in ingot furnace.After treating temperature-stable, will be incubated adiabatic cage and slowly mention, make molten silicon consecutive solidification from bottom to top, cast the heavy complete crystal ingot of a 250Kg.Consecutive solidification also has the purification effect equally.But mainly be that rational thermal field setting will be arranged, make polycrystalline ingot keep big crystal grain, intergranule is a low-angle boundary as far as possible.Concrete parameter is as shown in table 2.
Table 2
Embodiment 2
The silicon single-crystal preparation
5N solar-grade polysilicon (boron content 0.1ppm) after burn into cleans, places in the transparent high-purity silica pot, melts preparation P type＜100 in the magnetic Czochralski stove 〉, diameter of phi 6 " silicon single-crystal.The brilliant 30rpm that changes, crucible changes 1rpm, pulling rate 1.5mm/min, argon shield pressure 20～25Torr, argon flow amount 150L/min, the silicon single-crystal parameter is as shown in table 3.
Table 3
Claims (6)
1. molten silicon legal system is equipped with the solar level cell silicon chip, it is characterized in that described polysilicon or silicon single crystal purity reach 〉=the 5N level, and boron content reaches inferior ppm level, and oxygen level is 5～8 * 10
17Cm
-3, carbon content≤5 * 10
16Cm
-3, the polysilicon chip minority carrier life time reaches 2 microseconds; The monocrystalline silicon piece minority carrier life time reaches 10～20 microseconds.
2. the method for claim 1, wherein boron content reaches inferior ppm level, corresponding resistivity 0.5～5 ohmcm, resistivity unevenness Δ ρ≤5%.
3. the method for claim 1 is characterized in that adopting molten silicon method polysilicon to be prepared into Φ 6 " and Φ 8 " silicon single-crystal, its dislocation desity≤500/cm
2, minority carrier life time reaches 10～20 microseconds; Wherein said raw material polysilicon purity reaches 〉=the 5N level, and boron content reaches inferior ppm level, and oxygen level is 5～8 * 10
17Cm
-3, carbon content≤5 * 10
16Cm
-3, minority carrier life time reaches 10～20 microseconds.
4. the method for claim 1 is characterized in that adopting molten silicon method polysilicon or silicon single crystal to be prepared into silicon chip of solar cell, and make battery chip optoelectronic transformation efficiency η: polysilicon is 13～14.5%, and the silicon single crystal optoelectronic transformation efficiency is 15.5～17.5%; Wherein said raw material polysilicon purity reaches 〉=the 5N level, and boron content reaches inferior ppm level, and oxygen level is 5～8 * 10
17Cm
-3, carbon content≤5 * 10
16Cm
-3, the polysilicon chip minority carrier life time reaches 2 microseconds; The monocrystalline silicon piece minority carrier life time reaches 10～20 microseconds.
5. the method for claim 1 is characterized in that adopting molten silicon method polysilicon or silicon single crystal to be prepared into silicon chip of solar cell, and polysilicon chip photoelectric attenuation rate α is 4～5%, and silicon single crystal wafer photoelectric attenuation rate α is 3.5～4.5%; Wherein said raw material polysilicon purity reaches 〉=the 5N level, and boron content reaches inferior ppm level, and oxygen level is 5～8 * 10
17Cm
-3, carbon content≤5 * 10
16Cm
-3, the polysilicon chip minority carrier life time reaches 2 microseconds; The monocrystalline silicon piece minority carrier life time reaches 10～20 microseconds.
6. the method for claim 1, it is characterized in that adopting molten silicon method polysilicon or silicon single crystal to be prepared into silicon chip of solar cell, through the solar battery chip manufacturing, its open circuit voltage, short-circuit current, optimum operating voltage, recommended current, peak power output all meet the requirements; Wherein said raw material polysilicon purity reaches 〉=the 5N level, and boron content reaches inferior ppm level, and oxygen level is 5～8 * 10
17Cm
-3, carbon content≤5 * 10
16Cm
-3, the polysilicon chip minority carrier life time reaches 2 microseconds; The monocrystalline silicon piece minority carrier life time reaches 10～20 microseconds.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910176612A CN101713099A (en) | 2008-10-08 | 2009-09-24 | Silicon wafer for solar cell |
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|---|---|---|---|
| CN200810167007.7 | 2008-10-08 | ||
| CN200910176612A CN101713099A (en) | 2008-10-08 | 2009-09-24 | Silicon wafer for solar cell |
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| CN101713099A true CN101713099A (en) | 2010-05-26 |
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| CN200910176612A Pending CN101713099A (en) | 2008-10-08 | 2009-09-24 | Silicon wafer for solar cell |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102061514A (en) * | 2010-11-03 | 2011-05-18 | 天津市环欧半导体材料技术有限公司 | Preparation method of gas-phase heavy-doping boron zone-melting silicon single crystal |
| CN102418847A (en) * | 2011-09-30 | 2012-04-18 | 宁波市柯玛士太阳能科技有限公司 | Multimode rechargeable torch |
-
2009
- 2009-09-24 CN CN200910176612A patent/CN101713099A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102061514A (en) * | 2010-11-03 | 2011-05-18 | 天津市环欧半导体材料技术有限公司 | Preparation method of gas-phase heavy-doping boron zone-melting silicon single crystal |
| CN102061514B (en) * | 2010-11-03 | 2012-03-28 | 天津市环欧半导体材料技术有限公司 | Preparation method of gas-phase heavy-doping boron zone-melting silicon single crystal |
| CN102418847A (en) * | 2011-09-30 | 2012-04-18 | 宁波市柯玛士太阳能科技有限公司 | Multimode rechargeable torch |
| CN102418847B (en) * | 2011-09-30 | 2013-01-30 | 宁波市柯玛士太阳能科技有限公司 | Multimode rechargeable torch |
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Open date: 20100526 |