CN101710571A - Forward and reverse corrosion technology of Schottky diode metal structure - Google Patents

Forward and reverse corrosion technology of Schottky diode metal structure Download PDF

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Publication number
CN101710571A
CN101710571A CN200910117736A CN200910117736A CN101710571A CN 101710571 A CN101710571 A CN 101710571A CN 200910117736 A CN200910117736 A CN 200910117736A CN 200910117736 A CN200910117736 A CN 200910117736A CN 101710571 A CN101710571 A CN 101710571A
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seconds
metal
schottky diode
etching
out wet
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CN200910117736A
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CN101710571B (en
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徐谦刚
王林
蒲耀川
李�昊
张志向
张晓情
王雪梅
张玲玲
梁小龙
王钰中
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TIANSHUI TIANGUANG SEMICONDUCTOR CO Ltd
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TIANSHUI TIANGUANG SEMICONDUCTOR CO Ltd
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Abstract

The invention discloses a forward and reverse corrosion technology of a Schottky diode metal structure. The sequence of metal corrosion in the technology is as follows: metal Ag corrosion, metal Ti corrosion, metal Ti-W corrosion, metal Ti corrosion, metal Ti-W corrosion, metal Ti corrosion and metal Ag corrosion; different metals are corroded by different corrosive liquids with the following proportioning: Ag:H3PO4(54%):HAC(30%):HNO3 (98%):H2O is equal to 50:10:1:1; Ti: HF(40%):HNO3(98%):H2O is equal to 1:1:10; Ti-W:H2O2 (30%):NH4OH(30%):H2O is equal to 1:2:10. The corrosion time of metals according to different corrosion sequence is as follows: Ag is corroded for 200 seconds, Ti is corroded for 100 seconds, Ti-W for 120 seconds, Ti for 70 seconds, Ti-W for 90 seconds, Ti for 80 seconds and Ag for 150 seconds. The technology can improve the reliability of the product, has simple and convenient operation, avoids that silver raising and silver dropping of the metal is easily caused to the Schottky diode after being removed of photoresist as the adhesive film and metal surface layer are subjected to outside force and solves the problem of reliability which can be caused easily in the pressure welding and packaging process at later stage, namely the problems of poor metal adherence, small tension and low packaging yield.

Description

Forward and reverse corrosion technology of Schottky diode metal structure
Technical field
The present invention relates to a kind of wet corrosion technique, particularly relate to forward and reverse corrosion technology of Schottky diode metal structure.
Background technology
Fields such as Schottky diode extensive use and microwave mixer, detection and high-speed switching circuit, the Schottky diode front top-level metallic structure that existing market is used is: titanium silver structure, titanium is as adhesion layer, and silver is as the electrode layer metal.Anti-electrostatic-discharge in the use of reality (ESD) performance is low, and ordinary circumstance antistatic voltage is at 1 ~ 4KV, metal and SiO 2Adhesiveness is not so good, causes product poor at road, back encapsulation process pulling force, produces early failure in the production and transport process easily because anti-static is not enough.The front of Schottky diode substrate is disposed with the bottom metal layer titanium from bottom to top, the barrier metal layer titanium-tungsten, can effectively address the above problem behind adhesiving metal layer titanium and the metal electrode layer silver, but the traditional handicraft wet etching is because finish the shape that an inverted triangle appears in back section place analysis meeting with the tropism in corrosion successively, be that lower floor's Ti-W metal falls in, upper strata Ag comparatively speaking, the Ti metal can protrude, back pad pasting or metal surface remove photoresist so after being subjected to external force, cause metal to stick up silver easily or fall silver, in the pressure welding encapsulation process in later stage, be easy to generate integrity problem, promptly cause metal adhesion poor, problems such as pulling force is little, and the encapsulation yield is low.
Summary of the invention
The objective of the invention is to overcome the shortcoming of above-mentioned prior art, a kind of technology that solves existing Schottky diode resultant metal structure erosion hind wing silver, falls the problem of silver and poor reliability is provided.
For solving above-mentioned technical problem, the present invention adopts following technical scheme:
Step 1, Schottky diode metal electrode layer silver is carried out wet etching handle, its processing procedure is as follows:
Configuration etchant solution one: described etchant solution is 54% H by water, mass percent concentration 3PO 4, mass percent concentration is that 30% HAc and mass percent concentration are 98% HNO 3Be 1: 50: 10 by volume: 1 ratio evenly mixes;
Schottky diode metal electrode layer silver is carried out wet etching, and the time is 180～220 seconds;
Etching time cleans diode metal electrode layer silver to the back;
Step 2, Schottky diode adhesiving metal layer titanium carried out wet etching handle, its processing procedure is as follows:
Configuration etchant solution two: described etchant solution is that 40% HF and mass percent concentration are 98% HNO by water, mass percent concentration 3The ratio that is 1: 10: 1 by volume evenly mixes;
Schottky diode adhesion layer Titanium is carried out wet etching, and the time is 90～110 seconds;
Etching time cleans diode adhesion layer Titanium to the back;
Step 3, Schottky diode barrier metal layer titanium-tungsten is carried out wet etching handle, its processing procedure is as follows:
Configuration etchant solution three: described etchant solution is 30% H by water, mass percent concentration 2O 2With mass percent concentration be 30% NH 4OH is that 10: 1: 2 ratio evenly mixes by volume;
Schottky diode barrier metal layer titanium-tungsten is carried out wet etching, and the time is 110～130 seconds;
Etching time stops that to diode the metal level titanium-tungsten cleans to the back;
Step 4, Schottky diode bottom metal layer titanium is carried out wet etching handle, its processing procedure is as follows:
Carry out wet etching with two pairs of Schottky diode bottom metal layers of etchant solution titanium, the time is 60～80 seconds;
Etching time cleans diode bottom metal layer titanium to the back;
Step 5, Schottky diode barrier metal layer titanium-tungsten is carried out wet etching handle, its processing procedure is as follows:
Carry out wet etching with three pairs of Schottky diode barrier metal layers of etchant solution titanium-tungsten, the time is 80～100 seconds;
Etching time stops that to diode the metal level titanium-tungsten cleans to the back;
Step 6, Schottky diode adhesiving metal layer titanium carried out wet etching handle, its processing procedure is as follows:
Carry out wet etching with two pairs of Schottky diode adhesiving metals of etchant solution layer titanium, the time is 70～90 seconds;
Etching time cleans diode adhesiving metal layer titanium to the back;
Step 7, Schottky diode metal electrode layer silver is carried out wet etching handle, its processing procedure is as follows:
Carry out wet etching with a pair of Schottky diode metal electrode layer of etchant solution silver, the time is 135～165 seconds;
Etching time cleans diode metal electrode layer silver to the back.
Beneficial effect of the present invention:
Method by this technology, section place after corrosion analyzes the inverted triangle phenomenon can not occur, the neat phenomenon of metal can occur, metal can not occur like this after remove photoresist back pad pasting or metal surface are being subjected to external force and stick up silver or fall silver-colored problem, integrity problem can improve greatly.Solve the technological problems that has Schottky diode resultant metal structure erosion hind wing silver now, falls silver and poor reliability.
Description of drawings
Fig. 1 is not for carrying out etching process Schottky diode metal structure generalized section before.
Fig. 2 is for carrying out Schottky diode metal structure generalized section behind the forward etching process.
Fig. 3 is for carrying out Schottky diode metal structure generalized section behind the forward and reverse corrosion technology.
Embodiment
Embodiment 1
A kind of as shown in Figure 1 to Figure 3 forward and reverse corrosion technology of Schottky diode metal structure:
Step 1, Schottky diode metal electrode layer silver is carried out wet etching handle, its processing procedure is as follows:
Configuration etchant solution one: described etchant solution is 54% H by water, mass percent concentration 3PO 4, mass percent concentration is that 30% HAc and mass percent concentration are 98% HNO 3Be 1: 50: 10 by volume: 1 ratio evenly mixes;
Schottky diode metal electrode layer silver is carried out wet etching, and the time is 180 seconds;
Etching time cleans diode metal electrode layer silver to the back;
Step 2, Schottky diode adhesiving metal layer titanium carried out wet etching handle, its processing procedure is as follows:
Configuration etchant solution two: described etchant solution is that 40% HF and mass percent concentration are 98% HNO by water, mass percent concentration 3The ratio that is 1: 10: 1 by volume evenly mixes;
Schottky diode adhesion layer Titanium is carried out wet etching, and the time is 100 seconds;
Etching time cleans diode adhesion layer Titanium to the back;
Step 3, Schottky diode barrier metal layer titanium-tungsten is carried out wet etching handle, its processing procedure is as follows:
Configuration etchant solution three: described etchant solution is 30% H by water, mass percent concentration 2O 2With mass percent concentration be 30% NH 4OH is that 10: 1: 2 ratio evenly mixes by volume;
Schottky diode barrier metal layer titanium-tungsten is carried out wet etching, and the time is 115 seconds;
Etching time stops that to diode the metal level titanium-tungsten cleans to the back;
Step 4, Schottky diode bottom metal layer titanium is carried out wet etching handle, its processing procedure is as follows:
Carry out wet etching with two pairs of Schottky diode bottom metal layers of etchant solution titanium, the time is 75 seconds;
Etching time cleans diode bottom metal layer titanium to the back;
Step 5, Schottky diode barrier metal layer titanium-tungsten is carried out wet etching handle, its processing procedure is as follows:
Carry out wet etching with three pairs of Schottky diode barrier metal layers of etchant solution titanium-tungsten, the time is 85 seconds;
Etching time stops that to diode the metal level titanium-tungsten cleans to the back;
Step 6, Schottky diode adhesiving metal layer titanium carried out wet etching handle, its processing procedure is as follows:
Carry out wet etching with two pairs of Schottky diode adhesiving metals of etchant solution layer titanium, the time is 85 seconds;
Etching time cleans diode adhesiving metal layer titanium to the back;
Step 7, Schottky diode metal electrode layer silver is carried out wet etching handle, its processing procedure is as follows:
Carry out wet etching with a pair of Schottky diode metal electrode layer of etchant solution silver, the time is 165 seconds;
Etching time cleans diode metal electrode layer silver to the back.
Embodiment 2
In the present embodiment, processing step one etching time is 210 seconds as different from Example 1, processing step two etching times are 95 seconds, processing step three etching times are 120 seconds, processing step four etching times are 80 seconds, and processing step five etching times are 95 seconds, and processing step six etching times are 70 seconds, processing step seven etching times are 140 seconds, and all the other methods are all identical with embodiment 1.
Embodiment 3
In the present embodiment, processing step one etching time is 180 seconds as different from Example 1, processing step two etching times are 90 seconds, processing step three etching times are 110 seconds, processing step four etching times are 60 seconds, and processing step five etching times are 80 seconds, and processing step six etching times are 70 seconds, processing step seven etching times are 135 seconds, and all the other methods are all identical with embodiment 1.
Embodiment 4
In the present embodiment, processing step one etching time is 190 seconds as different from Example 1, processing step two etching times are 95 seconds, processing step three etching times are 115 seconds, processing step four etching times are 65 seconds, and processing step five etching times are 85 seconds, and processing step six etching times are 75 seconds, processing step seven etching times are 140 seconds, and all the other methods are all identical with embodiment 1.
Embodiment 5
In the present embodiment, processing step one etching time is 200 seconds as different from Example 1, processing step two etching times are 100 seconds, processing step three etching times are 120 seconds, processing step four etching times are 70 seconds, and processing step five etching times are 90 seconds, and processing step six etching times are 80 seconds, processing step seven etching times are 150 seconds, and all the other methods are all identical with embodiment 1.
Embodiment 6
In the present embodiment, processing step one etching time is 210 seconds as different from Example 1, processing step two etching times are 105 seconds, processing step three etching times are 125 seconds, processing step four etching times are 75 seconds, and processing step five etching times are 95 seconds, and processing step six etching times are 85 seconds, processing step seven etching times are 160 seconds, and all the other methods are all identical with embodiment 1.
Embodiment 7
In the present embodiment, processing step one etching time is 220 seconds as different from Example 1, processing step two etching times are 110 seconds, processing step three etching times are 130 seconds, processing step four etching times are 80 seconds, and processing step five etching times are 100 seconds, and processing step six etching times are 90 seconds, processing step seven etching times are 165 seconds, and all the other methods are all identical with embodiment 1.
Above-described only is preferred embodiment of the present invention.Should be understood that for the person of ordinary skill of the art, under technology enlightenment provided by the present invention, can also make other equivalent modifications and improvement, also should be considered as protection scope of the present invention.

Claims (2)

1. forward and reverse corrosion technology of Schottky diode metal structure is characterized in that this technology may further comprise the steps:
Step 1, Schottky diode metal electrode layer silver is carried out wet etching handle, its processing procedure is as follows:
Configuration etchant solution one: described etchant solution is 54% H by water, mass percent concentration 3PO 4, mass percent concentration is that 30% HAc and mass percent concentration are 98% HNO 3Be 1: 50: 10 by volume: 1 ratio evenly mixes;
Schottky diode metal electrode layer silver is carried out wet etching, and the time is 180～220 seconds;
Etching time cleans diode metal electrode layer silver to the back;
Step 2, Schottky diode adhesiving metal layer titanium carried out wet etching handle, its processing procedure is as follows:
Configuration etchant solution two: described etchant solution is that 40% HF and mass percent concentration are 98% HNO by water, mass percent concentration 3The ratio that is 1: 10: 1 by volume evenly mixes;
Schottky diode adhesion layer Titanium is carried out wet etching, and the time is 90～110 seconds;
Etching time cleans diode adhesion layer Titanium to the back;
Step 3, Schottky diode barrier metal layer titanium-tungsten is carried out wet etching handle, its processing procedure is as follows:
Configuration etchant solution three: described etchant solution is 30% H by water, mass percent concentration 2O 2With mass percent concentration be 30% NH 4OH is that 10: 1: 2 ratio evenly mixes by volume;
Schottky diode barrier metal layer titanium-tungsten is carried out wet etching, and the time is 110～130 seconds;
Etching time stops that to diode the metal level titanium-tungsten cleans to the back;
Step 4, Schottky diode bottom metal layer titanium is carried out wet etching handle, its processing procedure is as follows:
Carry out wet etching with two pairs of Schottky diode bottom metal layers of etchant solution titanium, the time is 60～80 seconds;
Etching time cleans diode bottom metal layer titanium to the back;
Step 5, Schottky diode barrier metal layer titanium-tungsten is carried out wet etching handle, its processing procedure is as follows:
Carry out wet etching with three pairs of Schottky diode barrier metal layers of etchant solution titanium-tungsten, the time is 80～100 seconds;
Etching time stops that to diode the metal level titanium-tungsten cleans to the back;
Step 6, Schottky diode adhesiving metal layer titanium carried out wet etching handle, its processing procedure is as follows:
Carry out wet etching with two pairs of Schottky diode adhesiving metals of etchant solution layer titanium, the time is 70～90 seconds;
Etching time cleans diode adhesiving metal layer titanium to the back;
Step 7, Schottky diode metal electrode layer silver is carried out wet etching handle, its processing procedure is as follows:
Carry out wet etching with a pair of Schottky diode metal electrode layer of etchant solution silver, the time is 135～165 seconds;
Etching time cleans diode metal electrode layer silver to the back.
2. according to the described a kind of forward and reverse corrosion technology of Schottky diode metal structure of claim 1, it is characterized in that: described processing step one etching time is 200 seconds, described processing step two etching times are 100 seconds, described processing step three etching times are 120 seconds, described processing step four etching times are 70 seconds, described processing step five etching times are 90 seconds, and described processing step six etching times are 80 seconds, and described processing step seven etching times are 150 seconds.
CN2009101177366A 2009-12-14 2009-12-14 Forward and reverse corrosion technology of Schottky diode metal structure Expired - Fee Related CN101710571B (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102915927A (en) * 2012-10-11 2013-02-06 杭州立昂微电子股份有限公司 Wet etching method for metal layer on front surface of high inverse-voltage Schottky diode
CN103617952A (en) * 2013-11-29 2014-03-05 中国电子科技集团公司第四十七研究所 Diode wet etching method
CN109390230A (en) * 2017-08-08 2019-02-26 天津环鑫科技发展有限公司 A kind of manufacturing method of channel schottky front silver surface metal structure
CN109545685A (en) * 2018-11-16 2019-03-29 扬州扬杰电子科技股份有限公司 A kind of front metal rework preocess not influencing Schottky barrier quality

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100385686C (en) * 2005-08-30 2008-04-30 浙江大学 Poly-SiGe schottky barrier diode and its preparing method
US7368371B2 (en) * 2006-06-16 2008-05-06 Chip Integration Tech. Co., Ltd. Silicon carbide Schottky diode and method of making the same
JP2009141165A (en) * 2007-12-07 2009-06-25 Siltronic Japan Corp Method of etching silicon wafer
CN101399201B (en) * 2008-11-13 2010-08-18 杭州杭鑫电子工业有限公司 Method for manufacturing silicon bidirectional trigger diode

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102915927A (en) * 2012-10-11 2013-02-06 杭州立昂微电子股份有限公司 Wet etching method for metal layer on front surface of high inverse-voltage Schottky diode
CN102915927B (en) * 2012-10-11 2014-12-03 杭州立昂微电子股份有限公司 Wet etching method for metal layer on front surface of high inverse-voltage Schottky diode
CN103617952A (en) * 2013-11-29 2014-03-05 中国电子科技集团公司第四十七研究所 Diode wet etching method
CN103617952B (en) * 2013-11-29 2016-08-17 中国电子科技集团公司第四十七研究所 Diode wet etching method
CN109390230A (en) * 2017-08-08 2019-02-26 天津环鑫科技发展有限公司 A kind of manufacturing method of channel schottky front silver surface metal structure
CN109545685A (en) * 2018-11-16 2019-03-29 扬州扬杰电子科技股份有限公司 A kind of front metal rework preocess not influencing Schottky barrier quality
CN109545685B (en) * 2018-11-16 2023-01-06 扬州扬杰电子科技股份有限公司 Front metal reworking process without affecting quality of Schottky barrier

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