CN109545685B - Front metal reworking process without affecting quality of Schottky barrier - Google Patents
Front metal reworking process without affecting quality of Schottky barrier Download PDFInfo
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- CN109545685B CN109545685B CN201811366635.8A CN201811366635A CN109545685B CN 109545685 B CN109545685 B CN 109545685B CN 201811366635 A CN201811366635 A CN 201811366635A CN 109545685 B CN109545685 B CN 109545685B
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 43
- 239000002184 metal Substances 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 34
- 230000004888 barrier function Effects 0.000 title claims abstract description 6
- 238000004140 cleaning Methods 0.000 claims abstract description 31
- 239000007788 liquid Substances 0.000 claims abstract description 26
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 16
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 16
- 230000007797 corrosion Effects 0.000 claims abstract description 14
- 238000005260 corrosion Methods 0.000 claims abstract description 14
- 239000003814 drug Substances 0.000 claims abstract description 13
- 238000001704 evaporation Methods 0.000 claims description 21
- 230000008020 evaporation Effects 0.000 claims description 20
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 238000001883 metal evaporation Methods 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910005544 NiAg Inorganic materials 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims 1
- 230000002159 abnormal effect Effects 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000001039 wet etching Methods 0.000 abstract description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 230000005856 abnormality Effects 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 13
- 238000005036 potential barrier Methods 0.000 description 5
- 229910000943 NiAl Inorganic materials 0.000 description 2
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/20—Recycling
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
A front metal reworking process without affecting the quality of a Schottky barrier. Relates to a wet etching process in a semiconductor manufacturing process, in particular to a front metal reworking process. The front metal reworking process is stable and efficient, does not affect the product yield, and can effectively solve the problem that the corrosion time is extremely difficult to control when PBE (boron doped iron) corrosive liquid corrodes Ti in the traditional process, and the quality of the Schottky barrier is not affected. A metal layer A, a metal layer B or a metal layer C grows on the front surface of the chip; in the rework process, ti attached to the front surface of the chip is corroded by cleaning liquid medicine, the cleaning liquid medicine comprises sulfuric acid and hydrogen peroxide, and the volume ratio of the sulfuric acid to the hydrogen peroxide is 4:1. The invention effectively avoids the product from being scrapped due to abnormal processing procedure or surface abnormality.
Description
Technical Field
The invention relates to a wet etching process in a semiconductor manufacturing process, in particular to a front metal reworking process.
Background
In the diode chip processing process, after the potential barrier is formed, 3 or 5 layers of metal, specifically represented as Ti/Ni/Ag, ti/Ni/Al, ti/Al/Ti/Ni/Ag, are evaporated on the front surface of the chip by using a Mark 50 evaporation stage. In the evaporation process, if the evaporation table fails, the evaporation cannot be continued, and the evaporation is stopped and the evaporation table is processed by opening a cavity; however, at this time, since the product is just half evaporated, the adhesion of metal is poor due to the cavity opening treatment, and the phenomenon of metal falling from the front surface or oxidation of metal Ni is likely to occur; therefore, the operator needs to perform rework treatment on the front surface of the chip to corrode the metal on the surface.
The rework process for three different vapor deposited metals in the conventional process is generally shown in table 1:
TABLE 1
Wherein, when the HF in the PBE corrosive liquid corrodes Ti, the corrosion rate is higher; if the corrosion time is short, ti is not completely corroded, the surface has chromatic aberration, and the appearance of the product is influenced after re-evaporation; if the etching time is long, the yield of the product is affected. So that the corrosion time is extremely difficult to control when an operator uses the PBE corrosive liquid to corrode Ti.
Disclosure of Invention
Aiming at the problems, the invention provides a stable and efficient front metal reworking process which does not influence the quality of a Schottky barrier and can effectively solve the problem that the corrosion time is extremely difficult to control when a PBE corrosion solution corrodes Ti in the traditional process.
The technical scheme of the invention is as follows: a metal layer A, a metal layer B or a metal layer C grows on the front surface of the chip;
the metal layer A sequentially comprises Ti, ni and Ag from inside to outside;
the metal layer B is sequentially made of Ti, al, ti, ni and Ag from inside to outside;
the metal layer C is sequentially Ti, ni and Al from inside to outside,
in the rework process, ti attached to the front surface of the chip is corroded by cleaning liquid medicine, the cleaning liquid medicine comprises sulfuric acid and hydrogen peroxide, and the volume ratio of the sulfuric acid to the hydrogen peroxide is 4:1.
The metal layer A grows on the front surface of the chip, and the reworking process is operated according to the following steps:
a1 Sequentially corroding Ag and Ni from outside to inside by using a NiAg corrosive liquid;
a2 Etching Ti by the cleaning solution;
a3 Cleaning the front surface of the chip by using BOE cleaning solution;
a4 After the failure of the evaporation table is eliminated, the chip is sent into the evaporation table, and the front metal evaporation is carried out again; and (6) finishing.
A metal layer B grows on the front surface of the chip, and the reworking process is operated according to the following steps:
b1 Sequentially corroding Ag and Ni from outside to inside by NiAg corrosive liquid;
b2 Etching Ti on the outer layer by PBE etching solution;
b3 Etching Al by using Al etching solution;
b4 Corroding Ti attached to the front surface of the chip by using the cleaning liquid medicine;
b5 Cleaning the front surface of the chip by using BOE cleaning solution;
b6 After the failure of the evaporation table is eliminated, the chip is sent into the evaporation table, and the front metal evaporation is carried out again; and (6) finishing.
A metal layer C grows on the front surface of the chip, and the reworking process is operated according to the following steps:
c1 Sequentially corroding Al and Ni from outside to inside through NiAl corrosive liquid corrosion;
c2 Etching Ti by the cleaning solution;
c3 Cleaning the front surface of the chip by BOE cleaning solution;
c4 After the failure of the evaporation table is eliminated, the chip is sent into the evaporation table, and the front metal evaporation is carried out again; and (6) finishing.
The cleaning liquid medicine also has the advantages of not corroding the oxide layer and the potential barrier, and even if the corrosion time is slightly long, the potential barrier is not influenced, the product yield is not influenced, and the corrosion time for corroding Ti is extremely easy to control. The method has the advantages of stability, high efficiency, no influence on the yield of products and the like on the whole, can be used for removing metal on the front surface of the chip under emergency conditions, and effectively avoids the product from being scrapped due to abnormal processing procedures or abnormal surfaces.
Detailed Description
According to the invention, a metal layer A, a metal layer B or a metal layer C grows on the front surface of the chip;
the metal layer A sequentially comprises Ti, ni and Ag from inside to outside;
the metal layer B is sequentially composed of Ti, al, ti, ni and Ag from inside to outside;
the metal layer C is sequentially composed of Ti, ni and Al from inside to outside,
in the rework process, ti (namely the innermost Ti in the metal layer A, the metal layer B or the metal layer C) attached to the front surface of the chip is corroded by cleaning liquid medicine, the cleaning liquid medicine comprises sulfuric acid and hydrogen peroxide, and the volume ratio of the sulfuric acid to the hydrogen peroxide is 4:1. The reaction equation during corrosion is as follows: ti +2H 2 SO 4 +2H 2 O 2 ＝Ti(SO 4 ) 2 +4H 2 O, the cleaning liquid medicine also has the advantages of not corroding the oxide layer and the potential barrier, even if the corrosion time is slightly long, the potential barrier is not influenced, the product yield is not influenced, and the corrosion time for corroding Ti is extremely easy to control. The method has the advantages of stability, high efficiency, no influence on the yield of products and the like on the whole, can be used for removing metal on the front surface of the chip under emergency conditions, and effectively avoids the product from being scrapped due to abnormal processing procedures or abnormal surfaces.
The rework process for three different metal layers is described in detail below:
the metal layer A grows on the front surface of the chip, and the reworking process is operated according to the following steps:
a1 Sequentially corroding Ag and Ni from outside to inside by NiAg corrosive liquid;
a2 Etching Ti by the cleaning solution;
a3 Cleaning the front surface of the chip by BOE cleaning solution;
a4 After the failure of the evaporation table is eliminated, the chip is sent into the evaporation table, and the front metal evaporation is carried out again; and (6) finishing.
A metal layer B grows on the front surface of the chip, and the reworking process is operated according to the following steps:
b1 Sequentially corroding Ag and Ni from outside to inside by NiAg corrosive liquid;
b2 Etching Ti on the outer layer by PBE etching solution; (in this case, since the Ti layer of the outer layer is at a certain distance from the front surface of the chip, the outer layer can be corroded by using the PBE corrosive liquid with lower cost, thereby reducing the operation cost of returning working hours)
B3 Etching Al by Al etching solution;
b4 Corroding Ti attached to the front surface of the chip by using the cleaning liquid medicine;
b5 Cleaning the front surface of the chip by using BOE cleaning solution;
b6 After the failure of the evaporation table is eliminated, the chip is sent into the evaporation table, and the front metal evaporation is carried out again; and (6) finishing.
A metal layer C grows on the front surface of the chip, and the rework process is operated according to the following steps:
c1 Sequentially corroding Al and Ni from outside to inside through NiAl corrosive liquid corrosion;
c2 Etching Ti by the cleaning solution;
c3 Cleaning the front surface of the chip by BOE cleaning solution;
c4 After the failure of the evaporation table is eliminated, the chip is sent into the evaporation table, and the front metal evaporation is carried out again; and (6) finishing.
Namely, three rework processes shown in table 2 were formed:
TABLE 2
Claims (1)
1. A front metal reworking process without influencing the quality of a Schottky barrier is characterized in that a metal layer grows on the front of a chip; the metal layer is sequentially composed of Ti, al, ti, ni and Ag from inside to outside;
in the rework process, ti attached to the front surface of the chip is corroded by cleaning liquid medicine, the cleaning liquid medicine comprises sulfuric acid and hydrogen peroxide, and the volume ratio of the sulfuric acid to the hydrogen peroxide is 4:1; it is characterized in that the preparation method is characterized in that,
the reworking process is operated according to the following steps:
1) Sequentially corroding Ag and Ni from outside to inside through NiAg corrosive liquid corrosion;
2) Corroding Ti on the outer layer by PBE corrosive liquid;
3) Corroding Al by using an Al corrosive liquid;
4) Corroding Ti adhered to the front surface of the chip by cleaning liquid medicine;
5) Cleaning the front surface of the chip by BOE cleaning solution;
6) After the failure of the evaporation table is eliminated, the chip is sent into the evaporation table, and the front metal evaporation is carried out again; and (6) finishing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811366635.8A CN109545685B (en) | 2018-11-16 | 2018-11-16 | Front metal reworking process without affecting quality of Schottky barrier |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811366635.8A CN109545685B (en) | 2018-11-16 | 2018-11-16 | Front metal reworking process without affecting quality of Schottky barrier |
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| Publication Number | Publication Date |
|---|---|
| CN109545685A CN109545685A (en) | 2019-03-29 |
| CN109545685B true CN109545685B (en) | 2023-01-06 |
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| CN112259455B (en) * | 2020-10-19 | 2024-01-26 | 扬州扬杰电子科技股份有限公司 | Method for improving metal residue of Ag surface product with passivation layer structure |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0629235A (en) * | 1992-07-09 | 1994-02-04 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| CN101197281A (en) * | 2006-12-05 | 2008-06-11 | 中芯国际集成电路制造(上海)有限公司 | Production method for silicide contact in semiconductor element |
| CN101710571A (en) * | 2009-12-14 | 2010-05-19 | 天水天光半导体有限责任公司 | Forward and reverse corrosion technology of Schottky diode metal structure |
| CN102097288A (en) * | 2009-12-14 | 2011-06-15 | 北大方正集团有限公司 | Rework method for back-side metal process |
| CN102496559A (en) * | 2011-11-25 | 2012-06-13 | 中国科学院微电子研究所 | Three-layer composite ion implantation barrier layer and preparation and removal method thereof |
| CN106129190A (en) * | 2016-06-27 | 2016-11-16 | 山东浪潮华光光电子股份有限公司 | A kind of minimizing technology of LED electrode structure |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6509278B1 (en) * | 1999-09-02 | 2003-01-21 | Micron Technology, Inc. | Method of forming a semiconductor contact that includes selectively removing a Ti-containing layer from the surface |
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- 2018-11-16 CN CN201811366635.8A patent/CN109545685B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0629235A (en) * | 1992-07-09 | 1994-02-04 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| CN101197281A (en) * | 2006-12-05 | 2008-06-11 | 中芯国际集成电路制造(上海)有限公司 | Production method for silicide contact in semiconductor element |
| CN101710571A (en) * | 2009-12-14 | 2010-05-19 | 天水天光半导体有限责任公司 | Forward and reverse corrosion technology of Schottky diode metal structure |
| CN102097288A (en) * | 2009-12-14 | 2011-06-15 | 北大方正集团有限公司 | Rework method for back-side metal process |
| CN102496559A (en) * | 2011-11-25 | 2012-06-13 | 中国科学院微电子研究所 | Three-layer composite ion implantation barrier layer and preparation and removal method thereof |
| CN106129190A (en) * | 2016-06-27 | 2016-11-16 | 山东浪潮华光光电子股份有限公司 | A kind of minimizing technology of LED electrode structure |
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