CN101688296A - Vacuum processing system and substrate transfer method - Google Patents
Vacuum processing system and substrate transfer method Download PDFInfo
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- CN101688296A CN101688296A CN200880023081A CN200880023081A CN101688296A CN 101688296 A CN101688296 A CN 101688296A CN 200880023081 A CN200880023081 A CN 200880023081A CN 200880023081 A CN200880023081 A CN 200880023081A CN 101688296 A CN101688296 A CN 101688296A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
- C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/6723—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
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Abstract
A vacuum processing system (1) is provided with a first processing section (2) wherein PVC processing chambers (12-15) are connected to a first transfer chamber (11) to which a wafer (W) is to be transferred; a second processing section (3) wherein CVD processing chambers (22, 23) are connected to a second processing chamber (21) to which the wafer is to be transferred; a buffer chamber (5a), which is arranged between the first transfer chamber (11) and the second transfer chamber (12) through a gate valve (G), stores the wafer (W), and is capable of adjusting pressure therein; and a control section (110) for controlling opening/closing of a gate valve (G) and pressure in the buffer chamber (5a) so that the buffer chamber (5a) is selectively communicated with either the first transfer chamber (11) or the second transfer chamber (12) and that pressure inside matches with pressure inside the communicating transfer chamber.
Description
Technical field
The present invention relates to the configuration process chamber forms in the carrying room that can remain vacuum vacuum flush system and the substrate transfer method adopted therein in the vacuum flush system.
Background technology
In the manufacturing process of semiconducter device, on semiconductor wafer (following brief note is a wafer),, form the processing of a plurality of metals or metallic compound film in order to form contact structures or wire structures as processed substrate.It is to carry out in remaining the treatment chamber of vacuum that this kind film forming is handled, yet recently, from the viewpoint of the effectuation handled and the viewpoint that inhibited oxidation or pollutent etc. pollute, the multi-cavity chamber system of following cluster tool (cluster tool) type receives publicity, promptly, a plurality of treatment chambers and the carrying room that remains vacuum are linked, thereby can utilize the carrying device of being located in this carrying room to chambers conveyance wafer (for example Japanese kokai publication hei 3-19252 communique).In this kind multi-cavity chamber system, because wafer is not exposed in the atmosphere, form a plurality of films continuously, therefore can carry out very effectively and pollute few processing.
But, recently, the film forming of semiconducter device is handled the situation that PVD (PhysicalVappor Deposition) such as the sputter of utilizing is arranged carry out, the situation of utilizing CVD (Chemical VapporDeposition) to carry out, under this situation, if the treatment chamber that carries out these processing can be equipped in the identical multi-cavity chamber system, then can effectively handle.But, their in general desired vacuum tightness differences, PVD one side will under low pressure handle.In addition, in general when carrying out CVD, can produce pollutant component.Thus, merely disposing in identical carrying room under the situation of CVD treatment chamber and PVD treatment chamber, the pollutant component of CVD treatment chamber is easy to be diffused in the PVD treatment chamber, is created in the pollution of the film that forms in the PVD treatment chamber, the pollution of PVD treatment chamber self.
As anti-technology of planting situation here, following technology was proposed, promptly constitute according to can dominant discharge the time and import cleaning gas to carrying room, will be as the wafer of process object thing during, make the pressure of carrying room be higher than the pressure (Japanese kokai publication hei 10-270527 communique) of this treatment chamber to the conveyance of predetermined process chamber.
But, in general desired stress level differs more than 10000 times in PVD processing and CVD processing, carrying out carrying room need being made as higher pressure when wafer is taken out of with respect to moving into of CVD treatment chamber, therefore in the technology of patent documentation 2, want spended time in order to carry out the pressure adjustment, thus the problem that has productivity to reduce.
Summary of the invention
The objective of the invention is to, following vacuum flush system and substrate transfer method adopted therein is provided, have desired stress level and be the treatment chamber of lower pressure level for the treatment chamber of high pressure level with relative relatively, can there be pollution, and do not manage in the chamber throughout with not reducing productivity and handle from other treatment chamber.
According to first viewpoint of the present invention, a kind of vacuum flush system is provided, possess first handling part, second handling part, surge chamber, controlling organization, above-mentioned first handling part has: first treatment chamber, and it carries out vacuum-treat to processed substrate under low relatively pressure; First carrying room, it connects above-mentioned first treatment chamber, and inside is adjusted to the vacuum tightness of the processing pressure that is suitable for above-mentioned first treatment chamber; Transport mechanism, it is located in above-mentioned first carrying room, processed substrate is moved into respect to above-mentioned first treatment chamber taken out of, and above-mentioned second handling part has: second treatment chamber, it carries out vacuum-treat to handled object under high relatively pressure; Second carrying room, it connects above-mentioned second treatment chamber, and inside is adjusted to the vacuum tightness of the processing pressure that is suitable for above-mentioned second treatment chamber; Transport mechanism, it is located in above-mentioned second carrying room, processed substrate moved into respect to above-mentioned second treatment chamber take out of, above-mentioned surge chamber is located between above-mentioned first carrying room and described second carrying room across the family of power and influence, processed substrate can be accommodated by portion within it, and the pressure adjustment can be carried out in its inside, above-mentioned controlling organization is controlled as followsly: with processed substrate from any one party of above-mentioned first carrying room and above-mentioned second carrying room during to the opposing party's conveyance, under the state of having closed the above-mentioned family of power and influence, make the pressure of above-mentioned surge chamber be suitable for the pressure of the side who has processed substrate in above-mentioned first carrying room and above-mentioned second carrying room, open the family of power and influence between this carrying room that has processed substrate and the above-mentioned surge chamber and make optionally connection between them, processed substrate is moved into to above-mentioned surge chamber, close the above-mentioned family of power and influence and above-mentioned surge chamber and above-mentioned first and second carrying room are cut off, under this state, make the pressure of above-mentioned surge chamber be suitable for the pressure of the opposing party's carrying room, open between above-mentioned surge chamber and above-mentioned the opposing party's the carrying room the family of power and influence and with processed substrate from of the carrying room conveyance of above-mentioned surge chamber to the opposing party.
In the vacuum flush system of above-mentioned first viewpoint, can use the PVD treatment chamber that carries out the PVD processing as above-mentioned first treatment chamber, can use as above-mentioned second treatment chamber and carry out the CVD treatment chamber that CVD handles.Under this situation, above-mentioned second carrying room preferably remains than the high pressure of above-mentioned second treatment chamber.In addition, under this situation, above-mentioned first treatment chamber can be remained 1 * 10
-7～1 * 10
-3The pressure of Pa remains 1 * 10 with above-mentioned second treatment chamber
1～1 * 10
3The pressure of Pa.
Above-mentioned surge chamber can adopt following formation, that is, have with deflated air-releasing mechanism wherein, to the gas introducing mechanism that wherein imports gas, can utilize above-mentioned air-releasing mechanism and above-mentioned gas introducing mechanism to adjust pressure.Above-mentioned first carrying room can adopt following formation, that is, have deflated air-releasing mechanism wherein, utilizes this air-releasing mechanism to be made as the pressure that is suitable for above-mentioned first treatment chamber.Above-mentioned second carrying room can adopt following formation, that is, have with deflated air-releasing mechanism wherein, to the gas introducing mechanism that wherein imports gas, utilizes these air-releasing mechanisms and gas introducing mechanism to be made as the pressure that is suitable for above-mentioned treatment chamber.
In addition, in the vacuum flush system of above-mentioned first viewpoint, the surge chamber that also has other, it is located between above-mentioned first carrying room and above-mentioned second carrying room across the family of power and influence, processed substrate can be accommodated by portion within it, and the pressure adjustment can be carried out in its inside, and above-mentioned surge chamber is being used during to the processed substrate of the above-mentioned second carrying room conveyance from above-mentioned first carrying room, and above-mentioned other surge chamber is being used during to the processed substrate of the above-mentioned first carrying room conveyance from above-mentioned second carrying room.
According to second viewpoint of the present invention, a kind of substrate transfer method adopted therein is provided, be in vacuum flush system with processed substrate from any one party of first carrying room and second carrying room substrate transfer method adopted therein to the opposing party's conveyance, this vacuum flush system possesses first handling part, second handling part, surge chamber, above-mentioned first handling part has: above-mentioned first treatment chamber, and it carries out vacuum-treat to processed substrate under low relatively pressure; First carrying room, it connects above-mentioned first treatment chamber, and inside is adjusted to the vacuum tightness of the processing pressure that is suitable for above-mentioned first treatment chamber; Transport mechanism, it is located in above-mentioned first carrying room, processed substrate is moved into respect to above-mentioned first treatment chamber taken out of, and above-mentioned second handling part has: second treatment chamber, it carries out vacuum-treat to handled object under high relatively pressure; Above-mentioned second carrying room, it connects above-mentioned second treatment chamber, and inside is adjusted to the vacuum tightness of the processing pressure that is suitable for above-mentioned second treatment chamber; Transport mechanism, it is located in above-mentioned second carrying room, processed substrate moved into respect to above-mentioned second treatment chamber take out of, above-mentioned surge chamber is located between above-mentioned first carrying room and above-mentioned second carrying room across the family of power and influence, processed substrate can be accommodated by portion within it, and the pressure adjustment can be carried out in its inside, the aforesaid substrate transport method has: under the state of having closed the above-mentioned family of power and influence, make the pressure of above-mentioned surge chamber be suitable for the operation of the pressure of the side who has processed substrate in above-mentioned first carrying room and above-mentioned second carrying room; Open the family of power and influence between this carrying room that has processed substrate and the above-mentioned surge chamber and make the operation that optionally is communicated with between them; Move into the operation of processed substrate to above-mentioned surge chamber from the above-mentioned carrying room that has a processed substrate; The operation of closing the above-mentioned family of power and influence and above-mentioned surge chamber and above-mentioned first and second carrying room being cut off; Under this state, make the pressure of above-mentioned surge chamber be suitable for the operation of pressure of the opposing party's carrying room; Open the operation of the family of power and influence between above-mentioned surge chamber and above-mentioned the opposing party's the carrying room; With processed substrate from the operation of above-mentioned surge chamber to the opposing party's carrying room conveyance.
In the substrate transfer method adopted therein of above-mentioned second viewpoint, can use the PVD treatment chamber that carries out the PVD processing as above-mentioned first treatment chamber, can use as above-mentioned second treatment chamber and carry out the CVD treatment chamber that CVD handles.
According to the 3rd viewpoint of the present invention, a kind of storage media is provided, it is the storage media that moves, can make computer to read to have stored the program that is used to control vacuum flush system on computers, this vacuum flush system possesses first handling part, second handling part, surge chamber, above-mentioned first handling part has: first treatment chamber, and it carries out vacuum-treat to processed substrate under low relatively pressure; First carrying room, it connects above-mentioned first treatment chamber, and inside is adjusted to the vacuum tightness of the processing pressure that is suitable for above-mentioned first treatment chamber; Transport mechanism, it is located in above-mentioned first carrying room, processed substrate is moved into respect to above-mentioned first treatment chamber taken out of, and above-mentioned second handling part has: second treatment chamber, it carries out vacuum-treat to handled object under high relatively pressure; Second carrying room, it connects above-mentioned second treatment chamber, and inside is adjusted to the vacuum tightness of the processing pressure that is suitable for above-mentioned second treatment chamber; Transport mechanism, it is located in above-mentioned second carrying room, processed substrate moved into respect to above-mentioned second treatment chamber take out of, above-mentioned surge chamber is located between above-mentioned first carrying room and above-mentioned second carrying room across the family of power and influence, processed substrate can be accommodated by portion within it, and the pressure adjustment can be carried out in its inside, said procedure when carrying out according to the mode of implementing following substrate transfer method adopted therein, make the above-mentioned vacuum flush system of computer control, promptly, with processed substrate from any one party of above-mentioned first carrying room and above-mentioned second carrying room substrate transfer method adopted therein to the opposing party's conveyance, have: under the state of having closed the above-mentioned family of power and influence, make the pressure of above-mentioned surge chamber be suitable for the operation of the pressure of the side who has processed substrate in above-mentioned first carrying room and above-mentioned second carrying room; Open the family of power and influence between this carrying room that has processed substrate and the above-mentioned surge chamber and make the operation that optionally is communicated with between them; Move into the operation of processed substrate to above-mentioned surge chamber from the above-mentioned carrying room that has a processed substrate; The operation of closing the above-mentioned family of power and influence and above-mentioned surge chamber and above-mentioned first and second carrying room being cut off; Under this state, make the pressure of above-mentioned surge chamber be suitable for the operation of pressure of the opposing party's carrying room; Open the operation of the family of power and influence between above-mentioned surge chamber and above-mentioned the opposing party's the carrying room; With processed substrate from the operation of above-mentioned surge chamber to the opposing party's carrying room conveyance.
According to the present invention, because processed substrate is being controlled according to as described below during to the opposing party's conveyance from any one party of above-mentioned first carrying room and above-mentioned second carrying room, promptly, under the state of having closed the above-mentioned family of power and influence, make the pressure of above-mentioned surge chamber be suitable for the pressure of the side who has processed substrate in above-mentioned first carrying room and above-mentioned second carrying room, open the family of power and influence between this carrying room that has processed substrate and the above-mentioned surge chamber and make optionally connection between them, processed substrate is moved into to above-mentioned surge chamber, close the above-mentioned family of power and influence and above-mentioned surge chamber and above-mentioned first and second carrying room are cut off, under this state, make the pressure of above-mentioned surge chamber be suitable for the pressure of the opposing party's carrying room, open between above-mentioned surge chamber and above-mentioned the opposing party's the carrying room the family of power and influence and with processed substrate from of the carrying room conveyance of above-mentioned surge chamber to the opposing party, therefore by utilizing surge chamber, carry out the partition of the atmosphere of first carrying room and second carrying room 21, and adjust the pressure of surge chamber, just can realize the conveyance of the processed substrate between first carrying room and second carrying room.Thus, utilize the existence of surge chamber, can prevent reliably from the crossed contamination of second treatment chamber of the relatively high pressure of CVD treatment chamber and so on to first treatment chamber of the relatively low pressure of PVD treatment chamber and so on, and do not need to make the pressure variation of 2 carrying rooms, the pressure of only adjusting the little surge chamber of volume between first carrying room and second carrying room during conveyance wafer W get final product, therefore carries out vacuum-treat with can not reducing productivity.
Description of drawings
Fig. 1 is the vertical view of vacuum flush system of many chamber profile of expression an embodiment of the invention.
Fig. 2 schematically shows first handling part of vacuum flush system of Fig. 1 and the sectional view of second handling part.
Fig. 3 is the sectional view of the PVD treatment chamber of expression first handling part.
Fig. 4 is the sectional view of the CVD treatment chamber of expression second handling part.
Fig. 5 is the figure of the Controlling System of expression when utilizing process controller control surge chamber.
Fig. 6 is the figure of pressure of pressure, the surge chamber of pressure, the CVD treatment chamber of the pressure of schematically representing first and second carrying rooms, PVD treatment chamber.
Fig. 7 is the vertical view of the vacuum flush system of expression other embodiments of the present invention.
Embodiment
Below, with reference to accompanying drawing embodiments of the present invention are specifically described.
Fig. 1 is the vertical view of vacuum flush system of many chamber profile of expression an embodiment of the invention.
First handling part 2 has 4 PVD treatment chambers 12,13,14,15 that planeform forms heptagonal first carrying room 11, is connected with 4 limits of this first carrying room 11.On other 2 limits of first carrying room 11, connecting above-mentioned surge chamber 5a, 5b respectively.PVD treatment chamber 12～15 and surge chamber 5a, 5b are connected with each limit of first carrying room 11 across family of power and influence G, and they are communicated with first carrying room 11 by opening the corresponding family of power and influence, cut off with first carrying room 11 by closing corresponding family of power and influence G.In first carrying room 11, be provided with respect to PVD treatment chamber 12～15, surge chamber 5a, 5b and carry out first transport mechanism 16 that moving into of wafer W taken out of.This first transport mechanism 16 is equipped on the substantial middle of first carrying room 11, can rotate and the front end of flexible rotation/pars contractilis 17 is provided with 2 supporting arm 18a, the 18b of supporting wafer W, these 2 supporting arm 18a, 18b mutually towards reverse direction be installed on rotation/pars contractilis 17.Be retained as the specified vacuum degree as described later in this first carrying room 11.
Second handling part 3 has 2 CVD treatment chambers 22,23 that planeform forms heptagonal second carrying room 21, is connected with 4 limits of this second carrying room 21.In addition, on 2 limits of first handling part, 2 sides of second carrying room 21, connecting above-mentioned surge chamber 5a, 5b respectively.In addition, moving on 2 limits of the portion's of taking out of 4 sides, connecting vacuum interlocking chamber 6a, 6b respectively. Treatment chamber 22,23, surge chamber 5a, 5b and vacuum interlocking chamber 6a, 6b are connected with each limit of second carrying room 21 across family of power and influence G, they are communicated with second carrying room 21 by opening the corresponding family of power and influence, cut off with second carrying room 21 by closing corresponding family of power and influence G.In second carrying room 21, be provided with respect to CVD treatment chamber 22,23, surge chamber 5a, 5b, vacuum interlocking chamber 6a, 6b and carry out second transport mechanism 26 that moving into of wafer W taken out of.This second transport mechanism 26 is equipped on the substantial middle of second carrying room 21, can rotate and the front end of flexible rotation/pars contractilis 27 is provided with 2 supporting arm 28a, the 28b of supporting wafer W, these 2 supporting arm 28a, 28b mutually towards reverse direction be installed on rotation/pars contractilis 27.Be retained as the specified vacuum degree as described later in this second carrying room 21.
Move into the portion of taking out of 4 across above-mentioned vacuum interlocking chamber 6a, 6b is located at and second handling part, 3 opposite sides, have connect vacuum interlocking chamber 6a, moving into of 6b taken out of chamber 31.At vacuum interlocking chamber 6a, 6b and move into to take out of and be provided with family of power and influence G between the chamber 31.Be provided with 2 Link Ports 32,33 moving on one side of the one side with connecting vacuum interlocking chamber 6a, 6b of taking out of chamber 31 facing mutually, the carrier C as the wafer W of processed substrate is accommodated in its connection.On these Link Ports 32,33, be respectively equipped with not shown gate, state or the empty carrier C that has accommodated wafer W directly is installed on these Link Ports 32,33, and gate was opened in the intrusion that prevents extraneous gas with moving into and was taken out of chamber 31 and be communicated with this moment.In addition, be provided with and aim at chamber 34 moving into the side of taking out of chamber 31, carry out the aligning of wafer W here.Take out of in the chamber 31 moving into, be provided with and carry out that wafer W is taken out of with respect to moving into of carrier C and wafer W is taken out of with transport mechanism 36 with respect to moving into of taking out of of moving into of vacuum interlocking chamber 6a, 6b.This moves into to take out of with transport mechanism 36 has 2 multi-joint arms, can walk on slide rail 38 along the orientation of carrier C, thereby carrying wafer W on the hand 37 of separately front end, carries out conveyance.
Below, the structure of first handling part 2 and second handling part is specifically described.Fig. 2 is the sectional view that schematically shows first handling part 2 and second handling part 3.
First carrying room 11 of first handling part 2 is because as mentioned above, when any conveyance wafer W of the PVD of the relatively low pressure of under high vacuum, handling treatment chamber 12～15, therefore be communicated with this PVD treatment chamber, the pressure in first carrying room 11 are retained as the high vacuum state with PVD treatment chamber 12～15 same degree.Specifically, the PVD treatment chamber as a rule is retained as 1 * 10
-7～1 * 10
-3Pa (about 1 * 10
-9～1 * 10
-5Torr) pressure about, first carrying room 11 also is retained as the pressure of this degree.From keeping the viewpoint of this kind pressure, in first carrying room 11, be provided with venting port 41 in its bottom, on this venting port 41, connecting exhaust pipe arrangement 42.In addition, in exhaust pipe arrangement 42, be folded with exhaust velocity and adjust valve 43 and vacuum pump 44.So, adjust exhaust by when utilizing vacuum pump 44 to carry out vacuum exhaust, utilizing exhaust velocity to adjust valve 43, just can be in above-mentioned scope with the pressure-controlling in first carrying room 11.
Second carrying room 21 of second handling part 3 is because as mentioned above, when any conveyance wafer W of the CVD treatment chamber of under relatively high pressure, handling 22,23, therefore be communicated with this CVD treatment chamber, the pressure in second carrying room 21 are retained as the pressure with CVD treatment chamber 22,23 same degree.Specifically, the CVD treatment chamber as a rule is retained as 1 * 10
1～1 * 10
3Pa (about 1 * 10
-1～1 * 10
1Torr) about, second carrying room 21 also is retained as the pressure of this degree.From keeping the viewpoint of this kind pressure, in second carrying room 22, be provided with venting port 51 in its bottom, on its roof, be provided with gas introduction port 55.On venting port 51, connecting exhaust pipe arrangement 52.In addition, in exhaust pipe arrangement 52, be provided with exhaust velocity and adjust valve 53 and vacuum pump 54.In addition, on gas introduction port 55, connecting the gas importing pipe arrangement 56 that is used to import cleaning gas, importing in the pipe arrangement 56 at gas and be provided with flow control valve 57.So, adjust exhaust by when utilizing vacuum pump 54 to carry out vacuum exhaust, utilizing exhaust velocity to adjust valve 53, and import pipe arrangement 56 from gas and will clean gas (for example Ar gas) importing second carrying room 21 with the regulation flow, just can be with the pressure-controlling in second carrying room 21 in above-mentioned scope.And, because handling, the CVD film forming can produce a large amount of pollution substances, therefore from preventing the viewpoint of the crossed contamination between the CVD treatment chamber, preferably second carrying room 21 is remained the pressure higher than CVD treatment chamber 22,23, form from the air-flow of second carrying room 21 towards CVD treatment chamber 22,23.
Below, describe with reference to the sectional view of Fig. 3 PVD treatment chamber 12 first handling part 2.The part that this PVD treatment chamber 12 forms as the sputter equipment 70 of PVD treatment unit is carried out sputter therein.That is,, dispose the mounting table 71 of mounting wafer W in the inside of the PVD treatment chamber 12 that constitutes sputter equipment 70.
The sealed member 72 of mounting table 71 upper areas of the inside of PVD treatment chamber 12 covers.Opening is formed at the top at PVD treatment chamber 12, is provided with conical sputtering target member 73 herein.In addition, the dielectric medium top board for example made by quartz of the upper opening of this sputtering target member 73 74 covers.That is, sputtering target member 73 and dielectric medium top board 74 constitute the roof of PVD treatment chamber 12.The negative pole that on sputtering target member 73, is connecting direct supply 75.Above sputtering target member 73, be provided with a plurality of fixed magnets 76.Above dielectric medium top board 74, dispose the ruhmkorff coil 77 that is used in PVD treatment chamber 12, forming inductively coupled plasma (ICP), on this ruhmkorff coil 77, connecting high frequency electric source 78.In addition, on mounting table 71, connect high frequency electric source 79, thereby can apply high-frequency voltage.
On the sidewall of PVD treatment chamber 12, be provided with gas inside introducing port 80, on this gas introduction port 80, connecting gas supplying tubing 81 until shield member 72.In addition, on gas supplying tubing 81, connecting the Ar gas supply source 82 that is used to supply with Ar gas.Thereby can in PVD treatment chamber 12, supply with Ar gas via gas supplying tubing 81 from Ar gas supply source 82.Connect exhaust pipe arrangement 83 in the bottom of PVD treatment chamber 12, in exhaust pipe arrangement 83, be provided with vacuum pump 84.Like this, move by making this vacuum pump 84, and the pressure in the PVD treatment chamber 12 are remained 1 * 10
-7～1 * 10
-3Pa (about 1 * 10
-9～1 * 10
-5Torr) pressure about.
On above-mentioned mounting table 71, be provided with respect to the surface of mounting table 71 and can give prominence to 3 (only illustrating 2) wafer supporting pins 85 that the wafer transfer that submerges is used, these wafer supporting pins 85 are fixed on the supporting plate 86.Like this, come elevating lever 87 by utilizing driving mechanisms 88 such as cylinder, wafer supporting pin 85 is by supporting plate 86 liftings.And symbol 89 is corrugated tubes.On the other hand, on the sidewall of PVD treatment chamber 12, be formed with wafer and move into and take out of a mouthful 12a, under the state that family of power and influence G is opened and carry out moving into of wafer W between first carrying room 11 and take out of.
In addition, to utilize vacuum pump 84 exhausts in the PVD treatment chamber 12 and be made as high vacuum, apply negative volts DS from 75 pairs of sputtering target members 73 of direct supply, and utilize fixed magnet 76 in PVD treatment chamber 12, to form magnetic field, by to wherein importing Ar gas, be maintained above-mentioned pressure range, and plasma body in the above-mentioned magnetic field is enclosed in formation near sputtering target member 73.The atoms metal that constitutes the material of sputtering target member 73 is got in Ar ion in this plasma body and 73 collisions of the sputtering target member of negative electrode.
Simultaneously, by ruhmkorff coil 77 is applied high-frequency voltage, form inductively coupled plasma (ICP) in chamber, the atoms metal of being got is ionized when passing this plasma body.After this, form RF deflection, suppress to inject the non-perpendicular composition of atoms metal ionic in the wafer W that is positioned on the mounting table 71 by mounting table 71 is applied high-frequency voltage.Dangle (overhang) that forms in the time of for example like this, just can suppressing in small hole film forming.
Like this,, do not produce pollutant component basically, therefore the processing that can under high vacuum state, very clean because gas supplied only is an Ar gas in PVD treatment chamber 12.
And PVD treatment chamber 13～15 also has basically the structure identical with above-mentioned PVD treatment chamber 12.
Below, describe with reference to the sectional view of Fig. 4 CVD treatment chamber 22 second handling part 3.This CVD treatment chamber 22 forms the part of CVD treatment unit 90, carries out CVD therein and handles.That is,, dispose the mounting table 91 of mounting wafer W, in this mounting table 91, be provided with well heater 92 in the inside of the CVD treatment chamber 22 that constitutes CVD treatment unit 90.This well heater 92 is by being generated heat by heater power source 93 power supplies.
On the roof of CVD treatment chamber 22, with mounting table 91 practise physiognomy be provided with over the ground be used for will be used for the spray header 94 that in CVD treatment chamber 22, imports with the spray shape of the processing gas handled of CVD.Spray header 94 has gas introduction port 95 at an upper portion thereof, and portion forms gaseous diffusion space 96 within it, forms a plurality of gas squit holes 97 in its bottom surface.On gas introduction port 95, be connected with gas supplying tubing 98, in addition, on gas supplying tubing 98, be connected with treating-gas supply system 99, this treating-gas supply system 99 is used to supply with and is used for the processing gas that CVD handles, and promptly is used to react and forms the unstripped gas of the film of regulation on the surface of wafer W.Thereby can supply with in CVD treatment chamber 22 via gas supplying tubing 98 and spray header 94 from treating-gas supply system 99 and handle gas.In the bottom of CVD treatment chamber 22, be provided with venting port 100, on this venting port 100, be connected with exhaust pipe arrangement 101, on exhaust pipe arrangement 101, be provided with vacuum pump 102.Like this, while make this vacuum pump 102 actions by supplying with processing gas, and will remain 1 * 10 in the CVD treatment chamber 22
1～1 * 10
3Pa (about 1 * 10
-1～1 * 10
1Torr) about.
On above-mentioned mounting table 91, be provided with respect to the surface of mounting table 91 and can give prominence to 3 (only illustrating 2) wafer supporting pins 103 that the wafer transfer that submerges is used, these wafer supporting pins 103 are fixed on the supporting plate 104.Like this, come elevating lever 105 by utilizing driving mechanisms 106 such as cylinder, wafer supporting pin 103 is just by by supporting plate 104 liftings.And symbol 107 is corrugated tubes.On the other hand, on the sidewall of CVD treatment chamber 22, be formed with wafer and move into and take out of mouthfuls 108, under the state that family of power and influence G is opened and carry out moving into of wafer W between second carrying room 21 and take out of.
In addition, in on one side with CVD treatment chamber 22, utilize vacuum pump 102 exhausts, utilize well heater 92 wafer W to be heated to be under the state of specified temperature on one side, in CVD treatment chamber 22, import via gas supplying tubing 98 and spray header 94 from treating-gas supply system 99 and handle gas across mounting table 91.Like this, will on wafer W, handle the reaction of gas, form the film of regulation on the surface of wafer W.In order to promote reaction, also can utilize suitable mechanism to generate plasma body.
In CVD treatment chamber 22, carrying out like this under the situation that CVD handles, having the pollutant components such as gas, byproduct of reaction of a lot of still unreacteds therein.So when the conveyance wafer W, this kind pollutant component might spread.
This vacuum flush system 1 has the control part 110 that is used to control each formation portion.This control part 110 possesses: controller 111, and it is made of the microprocessor (computer) of carrying out the control that respectively constitutes portion; User interface 112, indicating meter that it carries out the keyboard of the input operation etc. of order in order to manage vacuum flush system 1 by the operator, show the working condition of vacuum flush system visually etc. constitutes; Storage part 113, it deposits sequence of control that the control that is useful on the various processing and utilizing controllers 111 that will be carried out by vacuum flush system 1 realizes, be used for making the portion that respectively constitutes of treatment unit carry out the program of handling and promptly fill a prescription accordingly with various data and treatment condition.And user interface 112 and storage part 113 are connected with controller 111.
Above-mentioned prescription is stored in the storage media in the storage part 113.Storage media both can be a hard disk, also can be portable medium such as CDROM, DVD, flash memories.In addition, also can for example transmit prescription rightly from other device via dedicated line.
Like this, by as required, being used to will fill a prescription arbitrarily from the indication at user interface 112 etc. accesses from storage part 113 and controller 111 is carried out, and just can utilize the required processing of vacuum flush system 1 under the control of controller 111.
Particularly, in the present embodiment, as shown in Figure 5, the controller 111 of control part 110 is adjusted the flow control valve 67 of valve 63, vacuum pump 64, gas supplying tubing 66 by the topworks 121 of the family of power and influence G of control surge chamber 5a, 5b, the exhaust velocity of exhaust pipe arrangement 62, at the blended that prevents the atmosphere between first carrying room 11 and second carrying room 21 simultaneously, carry out the conveyance of the wafer W between first carrying room 11 and second carrying room 21.Promptly, these surge chambers 5a, 5b only are communicated with any one party of first carrying room 11 and second carrying room 21, mode according to the pressure in the carrying room that makes its inside be suitable for being communicated with, control the switching of family of power and influence G of switching, second carrying room, 21 sides of the family of power and influence G of first carrying room, 11 sides and the pressure in surge chamber 5a, the 5b, when between with first carrying room 11 and second carrying room 12, cutting off, carry out the mode of the conveyance of the wafer W between them and control.
As the film forming concrete example of contact part, can enumerate following example, that is, on the silicon or silicide of substrate, at first form the CVD-Ti film, next form the PVD-Ti film, form the PVD-Cu film then thereon.Under this situation, the CVD treatment chamber 22,23 of second handling part 3 can be made as the CVD-Ti film forming uses, with any 2 of the PVD treatment chamber 12～15 of first handling part 2, for example PVD treatment chamber 12,13 is made as PVD-Ti film forming usefulness, with other 2, for example PVD treatment chamber 14,15 is made as PVD-Cu film forming usefulness.Also can after the CVD-Ti film forming, form the CVD-TiN film, under this situation,, the opposing party is made as the CVD-TiN film forming with getting final product as long as a side of CVD treatment chamber 22,23 is made as CVD-Ti film forming usefulness.
In addition,, can enumerate following example as the film forming concrete example of wiring, that is, on the metallic membrane of substrate for example on the W film, at first form the CVD-TiN film, next form the PVD-Ti film, form the PVD-Cu film then thereon.Under this situation, the CVD treatment chamber 22,23 of second handling part 3 can be made as the CVD-TiN film forming uses, with any 2 of the PVD treatment chamber 12～15 of first handling part 2, for example PVD treatment chamber 12,13 is made as PVD-Ti film forming usefulness, with other 2, for example PVD treatment chamber 14,15 is made as PVD-Cu film forming usefulness.
Below, be example with the film forming of above-mentioned contact part, the processing action of this kind vacuum flush system 1 is described.
At first, utilize to move into from any carrier C and take out of with transport mechanism 36 taking-up wafer W and move into vacuum interlocking chamber 6a.Then, vacuum interlocking chamber 6a vacuum exhaust is made as the pressure with second carrying room, 21 same degree after, the wafer W of utilizing second transport mechanism 26 of second carrying room, 21 sides to take out vacuum interlocking chamber 6a is moved in any of CVD treatment chamber 22,23.After this, carry out the film forming of CVD-Ti film therein.It is that pressure is being remained 1 * 10 as described above that the film forming of this moment is handled
1～1 * 10
3Pa (about 1 * 10
-1～1 * 10
1Torr) carry out in the time of about.In general,, CVD can in treatment chamber, produce a large amount of pollution substances, therefore from preventing that pollution substance is to 21 diffusions of second carrying room and the viewpoint of crossed contamination need be set at the pressure of second carrying room 21 pressure that is higher than in the CVD treatment chamber because handling.
After film forming finishes, from the CVD treatment chamber that carried out handling, utilize second transport mechanism 26 that wafer W is taken in second carrying room 21, next wafer W is moved into surge chamber 5a from second carrying room.At this moment, before wafer W is moved into surge chamber 5a, with the pressure-controlling in the surge chamber 5a is the pressure that is suitable for second carrying room 21, then, open the family of power and influence G between second carrying room 21 and the surge chamber 5a, utilize second transport mechanism 26 that wafer W is moved into surge chamber 5a, be positioned on the mounting table 68.Second carrying room 21 of this moment and the pressure of surge chamber 5a remain 1 * 10 as described above
1～1 * 10
3Pa (about 1 * 10
-1～1 * 10
1Torr) about.Under this situation,, preferably make the pressure of surge chamber 5a be higher than the pressure of second carrying room 21 and form the air-flow towards second carrying room 21 from surge chamber 5a from the pollutant component that do not make second carrying room 21 as far as possible viewpoint to surge chamber 5a diffusion.
Thereafter, be positioned in wafer W under the state on the mounting table 68 of surge chamber 5a, close the family of power and influence G of second carrying room, 21 sides and surge chamber 5a is made as air-tight state, with pressure-controlling wherein is the pressure that is suitable for the pressure of first carrying room 11, then, open the family of power and influence G between the surge chamber 5a and first carrying room 11, utilize first transport mechanism 16 that the wafer W in the surge chamber 5a is taken into first carrying room 11.At this moment, the pressure of first carrying room 11 and surge chamber 5a remains 1 * 10 as mentioned above
-7～1 * 10
-3Pa (about 1 * 10
-9～1 * 10
-5Torr) about.
If schematically show the pressure of first and second carrying room of this moment, the pressure of PVD treatment chamber, the pressure of CVD treatment chamber, the pressure of surge chamber, then as shown in Figure 6.
The wafer W of taking out from surge chamber 5a is moved in any of PVD treatment chamber 12,13, carries out the film forming of PVD-Ti film therein and handles.The film forming of PVD-Ti film utilizes first transport mechanism 16 wafer W to be moved in any of PVD treatment chamber 14,15 after finishing, and carries out the film forming of PVD-Cu film here and handles.
The film forming of PVD-Cu film utilizes first transport mechanism 16 that wafer W is taken in first carrying room 11 after finishing, and next wafer W is moved into the surge chamber 5b from first carrying room 11.At this moment, before wafer W is moved among the surge chamber 5b, with the pressure-controlling in the surge chamber 5b is the pressure that is suitable for first carrying room 11, then, open the family of power and influence G between first carrying room 11 and the surge chamber 5b, utilize first transport mechanism 16 that wafer W is moved into surge chamber 5b, be positioned on the mounting table 68.Thereafter, be positioned in wafer W under the state on the mounting table 68 of surge chamber 5b, close the family of power and influence G of first carrying room, 11 sides and surge chamber 5b is made as air-tight state, with pressure-controlling wherein is the pressure that is suitable for the pressure of second carrying room 21, then, open the family of power and influence G between the surge chamber 5b and second carrying room 21, utilize second transport mechanism 26 that the wafer W in the surge chamber 5b is taken out in second carrying room 21.
After this, utilize second transport mechanism 26 that wafer W is moved into vacuum interlocking chamber 6b, after being made as normal atmosphere in the vacuum interlocking chamber 6b, utilize to move into to take out of wafer W is accommodated on any carrier C with transport mechanism 36.
As mentioned above, in the present embodiment, vacuum flush system 1 is divided into to be used to carry out as the processing under the high vacuum be first handling part 2 that the PVD film forming is handled, being used to carry out as the processing under the high pressure is second handling part 3 that the CVD film forming is handled, first carrying room 11 of first handling part 2 and second carrying room 21 of second handling part 3 are fixed as the pressure that is suitable for processing separately, between these first carrying rooms 11 and second carrying room 21, setting can be accommodated wafer W and can be adjusted the surge chamber 5a (5b) of its pressure inside, with wafer W from any one party of first carrying room 11 and second carrying room 21 during to the opposing party's conveyance, under the state of having closed family of power and influence G, make the pressure of surge chamber 5a (5b) be suitable for the pressure of the side who has wafer W in first carrying room 11 and second carrying room 21, open the family of power and influence G between this carrying room that has wafer W and the surge chamber 5a (5b) and make optionally connection between them, wafer W is moved into surge chamber 5a (5b), close family of power and influence G and with surge chamber 5a (5b) and first and second carrying room 11,12 cut off, under this state, make the pressure of surge chamber 5a (5b) be suitable for the pressure of the opposing party's carrying room, open the family of power and influence G between surge chamber 5a (5b) and the opposing party's the carrying room, with the carrying room of wafer W from surge chamber 5a (5b) conveyance to the opposing party, therefore just can utilize surge chamber 5a (5b), carry out the partition of the atmosphere of first carrying room 11 and second carrying room 21, and can realize the conveyance of the wafer W between first carrying room 11 and second carrying room 21 by adjusting the pressure of surge chamber 5a (5b).Thus, utilize the existence of surge chamber 5a (5b), can prevent reliably from of the crossed contamination of CVD treatment chamber to the PVD treatment chamber, and do not need to change the pressure of 2 carrying rooms, only between first carrying room 11 and second carrying room 21, adjust the little surge chamber 5a of volume during the conveyance wafer W, the pressure of 5b get final product, therefore can not reduce productivity ground and carry out the film forming processing.
In addition, as mentioned above, though handling, CVD in general can produce pollutant components such as unreacting gas or reaction product, yet the mode that is higher than the pressure in the CVD treatment chamber 22,23 according to the pressure that makes second carrying room 21 that carries out second handling part 3 that CVD handles is carried out pressure-controlling, just can prevent from as much as possible more effectively to prevent crossed contamination from the diffusion of the pollutant component of CVD treatment chamber 22,23.If improve the pressure of carrying room like this, then pressure will be in the direction away from the high vacuum that is suitable for the PVD processing, in the past, the time that is used to prevent the pressure adjustment of crossed contamination has to prolong, yet in the present embodiment, owing to only carry out the pressure adjustment and get final product, so can not reduce basically in productivity in such cases at surge chamber 5a, 5b yet.
And the present invention is not limited to above-mentioned embodiment, can carry out various distortion in the scope of thought of the present invention.For example, though provided the example that 2 surge chambers are set in the above-described embodiment, also can between first carrying room 11 and second carrying room 21,1 surge chamber 115 be set as shown in Figure 7.Because the number of surge chamber is many more, productivity just improves, and is therefore preferred, yet many if surge chamber becomes, and then installs the space and become big, and installation cost also can uprise, and therefore under the no problem situation of productivity, surge chamber is 1 and gets final product.
In addition, though in the above-described embodiment, be given in the example that 4 PVD treatment chambers is set in first handling part, 2 CVD treatment chambers are set in second handling part, yet also 4 CVD treatment chambers can be set in first handling part, 2 PVD treatment chambers are set in second treatment chamber.In addition, the number of the treatment chamber of each handling part is not limited to above-mentioned embodiment, as long as suitably adjust accordingly with processing.In addition, though in the above-described embodiment, is example as film forming material in the CVD treatment chamber with Ti and TiN, is that example is illustrated as film forming material in the PVD treatment chamber with Ti, Cu, yet be not limited thereto, in addition, for example W or WN can be enumerated, Ta or TaN can be enumerated as film forming material in the PVD treatment chamber as film forming material in the CVD treatment chamber.In addition, though be example with the CVD treatment chamber, be that example is illustrated as the treatment chamber of relatively low pressure with the PVD treatment chamber, yet be not limited thereto as the treatment chamber of relatively high pressure.For example, the seed that can be used as when forming the Cu film can utilize CVD to carry out with the film forming of the Ru film of substrate formation, yet owing to regard to CVD-Ru, when film forming, do not generate pollutant component basically, can handle down with the high vacuum (low pressure) of above-mentioned PVD same degree, the treatment chamber that therefore forms the CVD-Ru film can be used as and carry out vacuum treated first treatment chamber use under relatively low pressure.
In addition, though in the above-described embodiment, be that example is illustrated with the situation of carrying out the film forming processing as vacuum-treat, handle yet be not limited to film forming, also can similarly be applicable in other the vacuum-treat.
Claims (11)
1. vacuum flush system possesses: first handling part, second handling part, surge chamber, controlling organization,
Described first handling part has:
First treatment chamber, it carries out vacuum-treat to processed substrate under low relatively pressure;
First carrying room, it connects described first treatment chamber, and inside is adjusted to the vacuum tightness of the processing pressure that is suitable for described first treatment chamber;
Transport mechanism, it is located in described first carrying room, and processed substrate is moved into respect to described first treatment chamber taken out of,
Described second handling part has:
Second treatment chamber, it carries out vacuum-treat to handled object under high relatively pressure;
Second carrying room, it connects described second treatment chamber, and inside is adjusted to the vacuum tightness of the processing pressure that is suitable for described second treatment chamber;
Transport mechanism, it is located in described second carrying room, and processed substrate is moved into respect to described second treatment chamber taken out of,
Described surge chamber is located between described first carrying room and described second carrying room across the family of power and influence, and processed substrate can be accommodated by portion within it, and its inside can carry out the pressure adjustment,
Described controlling organization is following to be controlled: with processed substrate from any one party of described first carrying room and described second carrying room during to the opposing party's conveyance, under the state of having closed the described family of power and influence, make the pressure of described surge chamber be suitable for the pressure of the side who has processed substrate in described first carrying room and described second carrying room, open the family of power and influence between this carrying room that has processed substrate and the described surge chamber and make optionally connection between them, processed substrate is moved into described surge chamber, close the described family of power and influence and described surge chamber and described first and second carrying room are cut off, under this state, make the pressure of described surge chamber be suitable for the pressure of the opposing party's carrying room, open between described surge chamber and described the opposing party's the carrying room the family of power and influence and with processed substrate from of the carrying room conveyance of described surge chamber to the opposing party.
2. vacuum flush system according to claim 1 is characterized in that, described first treatment chamber is to carry out the PVD treatment chamber that PVD handles, and described second treatment chamber is to carry out the CVD treatment chamber that CVD handles.
3. vacuum flush system according to claim 2 is characterized in that, described second carrying room is maintained at than the high pressure of described second treatment chamber.
4. vacuum flush system according to claim 2 is characterized in that, described first treatment chamber is retained as 1 * 10
-7～1 * 10
-3The pressure of Pa, described second treatment chamber is retained as 1 * 10
1～1 * 10
3The pressure of Pa.
5. vacuum flush system according to claim 1, it is characterized in that, described surge chamber has with deflated air-releasing mechanism wherein, to the gas introducing mechanism that wherein imports gas, can utilize described air-releasing mechanism and described gas introducing mechanism to adjust pressure.
6. vacuum flush system according to claim 1 is characterized in that, described first carrying room has deflated air-releasing mechanism wherein, utilizes this air-releasing mechanism to be made as the pressure that is suitable for described first treatment chamber.
7. vacuum flush system according to claim 1, it is characterized in that, described second carrying room has with deflated air-releasing mechanism wherein, to the gas introducing mechanism that wherein imports gas, utilizes these air-releasing mechanisms and gas introducing mechanism to be made as the pressure that is suitable for described treatment chamber.
8. vacuum flush system according to claim 1, it is characterized in that, the surge chamber that also has other, it is located between described first carrying room and described second carrying room across the family of power and influence, processed substrate can be accommodated by portion within it, and the pressure adjustment can be carried out in its inside, described surge chamber is using during to the processed substrate of the described second carrying room conveyance from described first carrying room, and described other surge chamber is using during to the processed substrate of the described first carrying room conveyance from described second carrying room.
9. substrate transfer method adopted therein, be in vacuum flush system with processed substrate from any one party of first carrying room and second carrying room substrate transfer method adopted therein to the opposing party's conveyance, this vacuum flush system possesses: first handling part, second handling part, surge chamber, described first handling part has: first treatment chamber, and it carries out vacuum-treat to processed substrate under low relatively pressure; Above-mentioned first carrying room, it is connected with described first treatment chamber, and inside is adjusted to the vacuum tightness of the processing pressure that is suitable for described first treatment chamber; Transport mechanism, it is located in described first carrying room, processed substrate is moved into respect to described first treatment chamber taken out of, and described second handling part has: second treatment chamber, it carries out vacuum-treat to handled object under high relatively pressure; Above-mentioned second carrying room, it is connected with described second treatment chamber, and inside is adjusted to the vacuum tightness of the processing pressure that is suitable for described second treatment chamber; Transport mechanism, it is located in described second carrying room, processed substrate moved into respect to described second treatment chamber take out of, described surge chamber is located between described first carrying room and described second carrying room across the family of power and influence, processed substrate can be accommodated by portion within it, and the pressure adjustment can be carried out in its inside
Described substrate transfer method adopted therein has:
Under the state of having closed the described family of power and influence, make the pressure of described surge chamber be suitable for the operation of the pressure of the side who has processed substrate in described first carrying room and described second carrying room;
Open the family of power and influence between this carrying room that has processed substrate and the described surge chamber and make the operation that optionally is communicated with between them;
Move into the operation of processed substrate to described surge chamber from the described carrying room that has a processed substrate;
The operation of closing the described family of power and influence and described surge chamber and described first and second carrying room being cut off;
Under this state, make the pressure of described surge chamber be suitable for the operation of pressure of the opposing party's carrying room;
Open the operation of the family of power and influence between described surge chamber and described the opposing party's the carrying room;
With processed substrate from the operation of described surge chamber to the opposing party's carrying room conveyance.
10. substrate transfer method adopted therein according to claim 9 is characterized in that, described first treatment chamber is to carry out the PVD treatment chamber that PVD handles, and described second treatment chamber is to carry out the CVD treatment chamber that CVD handles.
11. storage media, action on computers, computer is read stored the program that is used to control following vacuum flush system, this vacuum flush system possesses: first handling part, second handling part, surge chamber, described first handling part has: first treatment chamber, and it carries out vacuum-treat to processed substrate under low relatively pressure; First carrying room, it connects described first treatment chamber, and inside is adjusted to the vacuum tightness of the processing pressure that is suitable for described first treatment chamber; Transport mechanism, it is located in described first carrying room, processed substrate is moved into respect to described first treatment chamber taken out of, and described second handling part has: second treatment chamber, it carries out vacuum-treat to handled object under high relatively pressure; Second carrying room, it is connected with described second treatment chamber, and inside is adjusted to the vacuum tightness of the processing pressure that is suitable for described second treatment chamber; Transport mechanism, it is located in described second carrying room, processed substrate moved into respect to described second treatment chamber take out of, described surge chamber is located between described first carrying room and described second carrying room across the family of power and influence, processed substrate can be accommodated by portion within it, and the pressure adjustment can be carried out in its inside
Described program according to the mode of implementing following substrate transfer method adopted therein, makes the described vacuum flush system of computer control when carrying out: with processed substrate from any one party of described first carrying room and described second carrying room to the opposing party's conveyance,
This substrate transfer method adopted therein has:
Under the state of having closed the described family of power and influence, make the pressure of described surge chamber be suitable for the operation of the pressure of the side who has processed substrate in described first carrying room and described second carrying room;
Open the family of power and influence between this carrying room that has processed substrate and the described surge chamber and make the operation that optionally is communicated with between them;
Move into the operation of processed substrate to described surge chamber from the described carrying room that has a processed substrate;
The operation of closing the described family of power and influence and described surge chamber and described first and second carrying room being cut off;
Under this state, make the pressure of described surge chamber be suitable for the operation of pressure of the opposing party's carrying room;
Open the operation of the family of power and influence between described surge chamber and described the opposing party's the carrying room;
With processed substrate from the operation of described surge chamber to the opposing party's carrying room conveyance.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007233724A JP2009062604A (en) | 2007-09-10 | 2007-09-10 | Vacuum treatment system, and method for carrying substrate |
| JP233724/2007 | 2007-09-10 | ||
| PCT/JP2008/065672 WO2009034869A1 (en) | 2007-09-10 | 2008-09-01 | Vacuum processing system and substrate transfer method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101688296A true CN101688296A (en) | 2010-03-31 |
Family
ID=40451878
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200880023081A Pending CN101688296A (en) | 2007-09-10 | 2008-09-01 | Vacuum processing system and substrate transfer method |
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| Country | Link |
|---|---|
| JP (1) | JP2009062604A (en) |
| KR (1) | KR20100065127A (en) |
| CN (1) | CN101688296A (en) |
| TW (1) | TW200931577A (en) |
| WO (1) | WO2009034869A1 (en) |
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| JPH04254349A (en) * | 1991-02-06 | 1992-09-09 | Sony Corp | Multichamber process apparatus |
| JP3486821B2 (en) * | 1994-01-21 | 2004-01-13 | 東京エレクトロン株式会社 | Processing apparatus and method of transporting object to be processed in processing apparatus |
| JP2003060008A (en) * | 2001-05-21 | 2003-02-28 | Tokyo Electron Ltd | Treatment apparatus, apparatus and method for transfer |
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- 2008-09-01 KR KR1020097027030A patent/KR20100065127A/en active Search and Examination
- 2008-09-01 WO PCT/JP2008/065672 patent/WO2009034869A1/en active Application Filing
- 2008-09-09 TW TW97134559A patent/TW200931577A/en unknown
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20100065127A (en) | 2010-06-15 |
| TW200931577A (en) | 2009-07-16 |
| WO2009034869A1 (en) | 2009-03-19 |
| JP2009062604A (en) | 2009-03-26 |
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