CN110610873B - Vacuum processing apparatus, vacuum processing system, and vacuum processing method - Google Patents

Vacuum processing apparatus, vacuum processing system, and vacuum processing method Download PDF

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Publication number
CN110610873B
CN110610873B CN201910505293.1A CN201910505293A CN110610873B CN 110610873 B CN110610873 B CN 110610873B CN 201910505293 A CN201910505293 A CN 201910505293A CN 110610873 B CN110610873 B CN 110610873B
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processing
space
substrate
vacuum
spaces
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CN110610873A (en
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山岸孝幸
小林民宏
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
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    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • H—ELECTRICITY
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    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
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    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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    • H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Abstract

The invention provides a technique advantageous for miniaturization and simplification of a vacuum processing apparatus. In a processing container of a vacuum processing apparatus, a first conveyance space and a second conveyance space are provided extending in a horizontal direction at positions adjacent to each other, and an intermediate wall portion is formed between the first conveyance space and the second conveyance space in the extending direction. The first conveyance space is provided with 1 or more of the processing spaces in the extending direction, and the second conveyance space is provided with 2 or more of the processing spaces in the extending direction. Further, formed in the intermediate wall portion are: and a merged exhaust passage in which the exhaust passages provided for the 3 or more processing spaces are merged. Since the merged exhaust passage is provided in the processing container, the vacuum processing apparatus can be downsized and simplified.

Description

Vacuum processing apparatus, vacuum processing system, and vacuum processing method
Technical Field
The invention relates to a vacuum processing apparatus, a vacuum processing system and a vacuum processing method.
Background
In a manufacturing process of a semiconductor device, various processes such as etching and film formation are performed on a semiconductor wafer (hereinafter, referred to as a wafer) as a substrate in a vacuum atmosphere. As a vacuum processing apparatus for vacuum processing a substrate as described above, patent document 1 describes a configuration in which 4 substrate processing sections are arranged at equal intervals in the circumferential direction in a vacuum chamber. A wafer transfer mechanism is provided at the center in the vacuum chamber, and the atmosphere in the vacuum chamber is evacuated through an exhaust port provided at the bottom surface of the outer periphery of the vacuum chamber.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2017-199735
Disclosure of Invention
Technical problem to be solved by the invention
The invention provides a technique advantageous for miniaturization and simplification of a vacuum processing apparatus.
Technical solution for solving technical problem
In the vacuum processing apparatus according to one embodiment of the present invention,
the vacuum processing apparatus for performing vacuum processing by supplying a processing gas to a substrate disposed in a processing space in a vacuum atmosphere, the vacuum processing apparatus comprising:
a first transport space and a second transport space for transporting the substrate, which are formed at positions adjacent to each other in a processing container for performing the vacuum processing and are provided to extend in a horizontal direction from a carry-in/carry-out port formed in a side surface of the processing container; and
an intermediate wall portion formed between the first conveying space and the second conveying space along the extending direction,
wherein 1 or more of the processing spaces are disposed in the first conveyance space along the extending direction, and 2 or more of the processing spaces are disposed in the second conveyance space along the extending direction,
the intermediate wall portion has formed therein: an exhaust passage provided for each of the 3 or more processing spaces disposed with the intermediate wall portion interposed therebetween; and a merged exhaust passage in which the exhaust passages are merged.
Effects of the invention
According to the present invention, miniaturization and simplification of a vacuum processing apparatus are facilitated.
Drawings
Fig. 1 is a plan view illustrating a structure of a vacuum processing system according to an embodiment of the present invention.
Fig. 2 is an exploded perspective view illustrating a configuration example of a vacuum processing apparatus provided in the vacuum processing system.
Fig. 3 is a schematic plan view illustrating the structure of the vacuum processing apparatus.
Fig. 4 is a longitudinal sectional view illustrating the structure of the vacuum processing apparatus.
Fig. 5 is an explanatory view for explaining an example of the gas supply system of the vacuum processing apparatus.
Fig. 6 is a partial longitudinal sectional view illustrating the operation of the vacuum processing apparatus.
Fig. 7A is a plan view illustrating a first modification of the vacuum processing apparatus according to the present invention.
Fig. 7B is a plan view illustrating a second modification of the vacuum processing apparatus according to the present invention.
Fig. 7C is a plan view illustrating a third modification of the vacuum processing apparatus according to the present invention.
Description of the reference numerals
2. Vacuum processing apparatus
20. Processing container
21. Is sent into the delivery port
22. Placing table
3. Intermediate wall part
31. Exhaust passage
32. Merged exhaust passage
33. Exhaust port
S1-S4 processing space
T1 first conveying space
T2 second conveyance space.
Detailed Description
A vacuum processing system 1 according to an embodiment of the present invention will be described with reference to a plan view of fig. 1. The vacuum processing system 1 includes a carry-in/out port 11, a carry-in/out unit 12, a vacuum transfer unit 13, and a vacuum processing apparatus 2. In fig. 1, the X direction is the left-right direction, the Y direction is the front-rear direction, and the inlet/outlet port 11 is the front side in the front-rear direction. The loading/unloading unit 12 is connected to the loading/unloading port 11 on the front side in the front-rear direction, and is connected to the vacuum transfer unit 13 on the rear side of the loading/unloading unit 12 in the front-rear direction.
The carry-in/out port 11 mounts a carrier C as a transport container, which accommodates a substrate to be processed, for example, a wafer W as a circular substrate having a diameter of, for example, 300 mm. The carry-in/out unit 12 is a unit for carrying in and out the wafer W between the carrier C and the vacuum transfer unit 13. The feeding-out unit 12 includes: a normal pressure transfer chamber 121 for transferring the wafer W to and from the carrier C in a normal pressure atmosphere by the transfer mechanism 120; and a load lock chamber 122 for switching the atmosphere in which the wafer W is placed between a normal pressure atmosphere and a vacuum atmosphere.
The vacuum transfer unit 13 includes a vacuum transfer chamber 14 in which a vacuum atmosphere is formed, and a substrate transfer mechanism 15 is disposed inside the vacuum transfer chamber 14. The vacuum transfer chamber 14 is, for example, a rectangular shape having a long side in the front-rear direction in a plan view. The long sides of the 4 side walls of the vacuum transfer chamber 14, which face each other, are connected to a plurality of, for example, 3 vacuum processing apparatuses 2, respectively, and the short side on the near side is connected to a load lock chamber 122 provided in the loading/unloading unit 12. In the figure, G is a gate valve provided between the atmospheric pressure transfer chamber 121 and the load lock chamber 122, between the load lock chamber 122 and the vacuum transfer unit 13, and between the vacuum transfer unit 13 and the vacuum processing apparatus 2. The gate valves G open and close the respective inlets and outlets of the wafers W provided in the units connected to each other.
The substrate transfer mechanism 15 is for transferring the wafer W between the carry-in/out unit 12 and the vacuum processing apparatus 2 in a vacuum atmosphere, is formed of an articulated arm, and has a substrate holding portion 16 for holding the wafer W. The vacuum processing apparatus 2 in this example collectively performs gas processing on a plurality of (for example, 4) wafers W in a vacuum atmosphere as described later. Therefore, the substrate holding unit 16 of the substrate transport mechanism 15 is configured to be able to hold, for example, 4 wafers W so that 4 wafers W can be collectively transferred to and received from the vacuum processing apparatus 2.
Specifically, the substrate transport mechanism 15 includes, for example, a base 151, a horizontally extending first arm 152, a horizontally extending second arm 153, and a substrate holding portion 16. The base side of the first arm 152 is provided on the base 151 to rotate about a vertical rotation axis on the base 151, and the base side of the second arm 153 is provided on the tip end of the first arm 152 to rotate about a vertical rotation axis on the tip end of the first arm 152. The substrate holding portion 16 includes a first substrate holding portion 161, a second substrate holding portion 162, and a connecting portion 163. The first substrate holder 161 and the second substrate holder 162 are configured in the shape of 2 elongated spatulas extending horizontally in parallel to each other. The connection portion 163 extends in the horizontal direction so as to be orthogonal to the extending direction of the first substrate holding portion 161 and the second substrate holding portion 162, and connects the base ends of the first substrate holding portion 161 and the second substrate holding portion 162 to each other. The connecting portion 163 is provided at the longitudinal center portion of the distal end portion of the second arm 153, and rotates about a vertical rotation axis at the distal end portion of the second arm 153. The first substrate holding portion 161 and the second substrate holding portion 162 will be described later.
Next, with reference to fig. 2 to 4, the vacuum processing apparatus 2 will be described with reference to an example of a film Deposition apparatus suitable for performing a plasma CVD (Chemical Vapor Deposition) process on the wafer W. Fig. 2 is an exploded perspective view illustrating the structure of the vacuum processing apparatus 2, fig. 3 isbase:Sub>A plan view schematically showingbase:Sub>A processing space provided in the vacuum processing apparatus 2, and fig. 4 isbase:Sub>A longitudinal sectional side view showing the vacuum processing apparatus 2 cut along the linebase:Sub>A-base:Sub>A' in fig. 3.
The 6 vacuum processing apparatuses 2 are configured similarly to each other, and the wafers W can be processed in parallel with each other among the vacuum processing apparatuses 2. The vacuum processing apparatus 2 includes a processing container (vacuum container) 20 having a rectangular shape in plan view. In fig. 2 and 4, 201 denotes a top member of the processing container 20, and 202 denotes a container main body. The processing container 20 has, for example, a sidewall portion 203 surrounding the periphery of the processing container 20, and among the 4 sidewall portions 203, the sidewall portion 203 connected to the vacuum transfer chamber 14 is formed with 2 carry-in/out ports 21 arranged in the front-rear direction (Y' direction in fig. 2). The feed/discharge port 21 is opened and closed by the gate valve G.
As shown in fig. 2 and 3, inside the processing container 20, a first transporting space T1 and a second transporting space T2 for transporting the wafer W are provided at positions adjacent to each other, and the first transporting space T1 and the second transporting space T2 are provided to extend in the horizontal direction from the respective carry-in and carry-out ports 21. Further, an intermediate wall portion 3 is formed between the first conveying space T1 and the second conveying space T2 in the processing container 20 along the extending direction (X' direction in fig. 2). The first conveyance space T1 is provided with 2 processing spaces S1 and S2 in the extending direction, and the second conveyance space T2 is provided with 2 processing spaces S3 and S4 in the extending direction. Therefore, a total of 4 processing spaces S1 to S4 are arranged in a matrix of 2 × 2 when viewed from above in the processing container 20. The horizontal direction mentioned here also includes a direction slightly inclined in the extending direction within a range in which the influence of contact between devices during the operation of carrying in and out the wafer W is not exerted due to the influence of tolerance or the like at the time of manufacturing.
Referring to fig. 4, the internal structure of the processing container 20 including the processing spaces S1 to S4 will be described. The 4 processing spaces S1 to S4 have the same configuration as each other, and are each formed between a stage 22 on which a wafer W is placed and a gas supply unit 4 disposed to face the stage 22. Fig. 4 shows the processing space S1 of the first transfer space T1 and the processing space S4 of the second transfer space T2. Hereinafter, the processing space S1 will be described as an example.
The mounting table 22 also serves as a lower electrode, is formed in a flat columnar shape made of, for example, aluminum nitride (AlN) embedded in a metal or a metal mesh electrode, and is movable up and down via a drive shaft 231 and rotatable about a vertical axis by a drive mechanism 23 also serving as a rotation mechanism. In fig. 4, the mounting table 22 at the processing position is depicted by a solid line, and the mounting table 22 at the delivery position is depicted by a broken line. The processing position is a position at which a vacuum process (film deposition process) described later is performed, and the transfer position is a position at which the wafer W is transferred to and from the substrate transport mechanism 15 described above. In the figure, reference numeral 24 denotes heaters embedded in the mounting table 22, and the respective wafers W mounted on the mounting table 22 are heated to a temperature of about 60 to 600 ℃. The mounting table 22 is connected to a ground potential.
A plurality of (e.g., 3) delivery pins 25 are provided at positions corresponding to the mounting table 22 on the bottom surface of the processing container 20, and through holes 26 for forming passing areas of the delivery pins 25 are formed in the mounting table 22. When the mounting table 22 is lowered to the delivery position, the delivery pin 25 passes through the through hole 26, and the upper end of the delivery pin 25 protrudes from the mounting surface of the mounting table 22. The transfer pins 25 are configured such that the shapes of the first substrate holding section 161 and the second substrate holding section 162 and the arrangement of the transfer pins 25 are set so as not to be buffered when the wafer W is transferred between the first substrate holding section 161 and the second substrate holding section 162 of the substrate transfer mechanism 15.
Here, the first substrate holding portion 161 and the second substrate holding portion 162 are explained. The first substrate holding section 161 is configured to hold the wafer W at a position corresponding to each arrangement position of the processing spaces S1 and S2 in the first transfer space T1 after entering the first transfer space T1. The positions corresponding to the arrangement positions of the processing spaces S1 and S2 in the first transfer space T1 are set to deliver the wafer W to the 2 stages 22 provided in the processing spaces S1 and S2 of the first transfer space T1. After entering the second transfer space T2, the second substrate holding section 162 is configured to hold the wafer W at a position corresponding to each arrangement position of the processing spaces S3 and S4 in the second transfer space T2. The positions corresponding to the arrangement positions of the processing spaces S3 and S4 in the second transfer space T2 are set to deliver the wafers W to the 2 stages 22 formed in the processing spaces S3 and S4 in the second transfer space T2.
For example, the first substrate holding portion 161 and the second substrate holding portion 162 are formed so that each width is smaller than the diameter of the wafer W, and the front end side and the root end side of each of the first substrate holding portion 161 and the second substrate holding portion 162 support the back surface of the wafer W with a space therebetween. The wafer W supported by the front end sides of the first substrate holding portion 161 and the second substrate holding portion 162 has, for example, a central portion supported by the front ends of the first substrate holding portion 161 and the second substrate holding portion 162.
In this manner, the substrate transfer mechanism 15, the delivery pins 25, and the tables 22 cooperate with each other, so that, for example, 4 wafers W can be delivered simultaneously and at once between the substrate transfer mechanism 15 and each table 22. Reference numeral 27 in fig. 4 denotes a bearing portion which holds the inside of the processing container 20 in an airtight manner and rotatably holds the drive shaft 231 so as to be movable up and down.
Further, a gas supply unit 4 constituting an upper electrode is provided above the mounting table 22 in the top member 201 of the processing chamber 20 via a guide member 34 formed of an insulating member. The gas supply unit 4 includes: a cover 42; a shower plate (shower plate) 43 which constitutes an opposing surface provided to oppose the mounting surface of the mounting table 22; and a gas flow chamber 44 formed between the lid 42 and the shower plate 43. The lid body 42 is connected to the gas distribution passage 51, and the gas discharge holes 45 penetrating in the thickness direction are arranged, for example, in a vertical and horizontal direction in the shower plate 43, and discharges the gas in a shower shape to the mounting table 22.
Each gas supply unit 4 is connected to a gas supply system 50 via a gas supply pipe 51 as described later. The gas supply system 50 includes, for example: a supply source of a reactive gas (film forming gas), a purge gas, and a cleaning gas as process gases; piping; a valve V; a flow rate adjustment unit M.
The shower plate 43 is connected to a high-frequency power supply 41 via a matching unit 40. When high-frequency power is applied between the shower plate (upper electrode) 43 and the stage (lower electrode) 22, the gas (reaction gas in this example) supplied from the shower plate 43 to the processing space S1 can be converted into plasma by capacitive coupling.
Next, the exhaust passage and the merged exhaust passage formed in the intermediate wall portion 3 will be described. As shown in fig. 3 and 4, the intermediate wall portion 3 is provided with an exhaust passage 31 provided for each of the 4 processing spaces S1 to S4, and a merged exhaust passage 32 where the exhaust passages 31 merge. The merged exhaust passage 32 extends vertically in the intermediate wall portion 3.
In this example, as shown in fig. 4, the intermediate wall portion 3 includes a wall portion main body 311 provided on the container main body 202 side and an exhaust passage forming member 312 provided on the top member 201 side. Further, an exhaust passage 31 is provided inside the exhaust passage forming member 312.
Further, the exhaust port 33 is formed in each of the processing spaces S1 to S4 in the wall surface of the intermediate wall portion 3 located on the outer side of the processing spaces S1 to S4. Each exhaust passage 31 is formed in the intermediate wall portion 3 so as to connect the exhaust port 33 and the merged exhaust passage 32. Therefore, as shown in fig. 4, each exhaust passage 31 extends horizontally in the intermediate wall portion 3, and then is bent downward and extends vertically, and is connected to the merged exhaust passage 32.
For example, the exhaust passage 31 is formed in a circular shape in cross section as shown in fig. 3, the upstream end of the merged exhaust passage 32 is connected to the downstream end of each exhaust passage 31, and the upstream side of each exhaust passage 31 is an exhaust port 33 and is opened outward of each of the processing spaces S1 to S4.
Around each of the processing spaces S1 to S4, an exhaust guide member 34 is provided so as to surround each of the processing spaces S1 to S4. The guide member 34 is, for example, an annular body provided to surround a peripheral area of the stage 22 at the processing position with a space from the stage 22. The guide member 34 has a rectangular longitudinal section, for example, and forms a flow passage 35 having an annular shape in plan view. Fig. 3 schematically shows the processing spaces S1 to S4, the guide member 34, the exhaust passage 31, and the merged exhaust passage 32.
As shown in fig. 4, the guide member 34 is formed, for example, in a U-shape in vertical cross section, and an opening portion of the U-shape is disposed downward. The guide member 34 is fitted into the intermediate wall portion 3 of the container body 202 and the recess 204 formed on the side of the side wall portion 203, and the flow path 35 described above is formed between the members constituting the wall portions 3 and 203.
The guide member 34 fitted into the recess 204 of each wall portion 3, 203 forms a slit-shaped slit exhaust port 36 that opens into the processing spaces S1 to S4. In this way, the slit exhaust ports 36 are formed in the circumferential direction in the side circumferential portions of the processing spaces S1 to S4. The flow path 35 is connected to the exhaust port 33 described above, and flows the process gas discharged from the slit exhaust port 36 to the exhaust port 33.
In addition, attention is paid to a group of 2 processing spaces S1 and S2 arranged in the extending direction of the first conveying space T1 and a group of 2 processing spaces S3 and S4 arranged in the extending direction of the second conveying space T2. As shown in fig. 3, the above-described groups of processing spaces S1 to S2 and S3 to S4 are arranged in a 180 ° rotationally symmetrical manner so as to surround the merged exhaust passage 32 when viewed from above.
As a result, the process gas flow paths from the respective process spaces S1 to S4 to the merged exhaust path 32 via the slit exhaust port 36, the flow path 35 of the guide member 34, the exhaust port 33, and the exhaust path 31 are formed so as to surround the merged exhaust path 32 with 180 ° rotational symmetry. In addition, when the positional relationship among the first transport space T1, the second transport space T2, and the intermediate wall portion 3 is eliminated and attention is paid to the flow path of the process gas, the flow path may be formed so as to be rotationally symmetrical at 90 ° around the merged exhaust passage 32 when viewed from above.
The merged exhaust passage 32 is connected to an exhaust pipe 61 via a merged exhaust port 205 formed in the bottom surface of the processing chamber 20, and the exhaust pipe 61 is connected to a vacuum pump 62 constituting a vacuum exhaust mechanism via a valve mechanism 7. The vacuum pumps 62 are provided in one processing chamber 20, for example, and as shown in fig. 1, exhaust pipes 61 on the downstream side of the vacuum pumps 62 are joined together and connected to, for example, a factory exhaust system.
The valve mechanism 7 is a mechanism for opening and closing a flow passage of the process gas formed in the exhaust pipe 61, and includes, for example, a housing 71 and an opening and closing portion 72. In this example, a first opening 73 connected to the exhaust pipe 61 on the upstream side is formed in the upper surface of the casing 71, and a second opening 74 connected to the exhaust pipe 61 on the downstream side is formed in the side surface of the casing 71.
The opening/closing portion 72 includes, for example: an opening/closing valve 721 formed to close the first opening 73; and an elevating mechanism 722 provided outside the casing 71 and configured to elevate the opening/closing valve 721 within the casing 71. In this way, the opening/closing valve 71 is configured to be able to be raised and lowered between a closed position for closing the first opening 73 as indicated by the dashed line in fig. 4 and 5 and an open position for being retracted to a lower side than the first opening 73 and the second opening 74 as indicated by the solid line in fig. 4 and 5. When the opening/closing valve 721 is at the closed position, the downstream end of the merging/exhaust port 205 is closed, and the exhaust in the processing chamber 20 is stopped. When the opening/closing valve 721 is at the open position, the downstream end of the merged exhaust port 205 is opened to exhaust the inside of the processing chamber 20.
Next, referring to fig. 2 and 5, a process gas supply system will be described by taking a case of using 2 kinds of reaction gases as an example. For the sake of convenience of illustration, the supply system of the reaction gas is always illustrated as one system (the gas distribution passage 510, the common gas supply passage 52) in fig. 4. Each gas supply pipe 51 is connected to a substantially center of an upper surface of each gas supply unit 4. The gas supply pipe 51 is connected to a first reactant gas supply 541 and a purge gas supply 55 via a first common gas supply path 521 via a first gas distribution path 511. The gas supply pipe 51 is connected to a second reactant gas supply source 542 and a purge gas supply source 55 via a second common gas supply passage 522 via a second gas distribution passage 512. The valve V21 and the flow rate adjustment unit M21 are used to supply the first reactive gas, the valve V22 and the flow rate adjustment unit M22 are used to supply the second reactive gas, and the valve V3 and the flow rate adjustment unit M3 are used to supply the purge gas.
Further, the gas supply pipe 51 is connected to a supply source 53 of a purge gas via a Plasma device (RPU: remote Plasma Unit) 531 through a purge gas supply passage 532. The cleaning gas supply passage 532 is branched into 4 sub-branches on the downstream side of the plasma device 531, and is connected to the gas supply pipe 51. A valve V1 and a flow rate adjusting portion M1 are provided on the upstream side of the plasma device 531 in the cleaning gas supply passage 532. Further, valves V11 to V14 are provided for each branched branch pipe on the downstream side of the plasma device 531, and the corresponding valves V11 to V14 are opened at the time of cleaning. To form an insulating oxide film (SiO) by CVD 2 ) As the reaction gas, for example, tetraethoxysilane (TEOS) and oxygen (O) can be used 2 ) As the purge gas, for example, nitrogen (N) can be used 2 ) And the like. TEOS and O are used as reaction gases 2 In the case of gas, for example, TEOS is supplied from the first reactant gas supply 541 and O is supplied from the second reactant gas supply 542 2 A gas. In addition, nitrogen trifluoride (NF), for example, can be used as the cleaning gas 3 ) A gas.
In this example, the process gas paths from the gas distribution passages 51 to the gas supply unit 4 are formed so that the conductance (control) to the process gas distributed from the common gas supply passage 52 is the same. For example, as shown in fig. 2 and 5, the downstream side of the first common gas supply path 521 is branched into 2 systems, and the branched gas supply path is further branched into 2 systems to form the first gas distribution path 511 in a tree shape. The first gas distribution passage 511 is connected to the gas supply pipe 51 on the downstream side of the purge gas valves V11 to V14. In addition, the downstream side of the second common gas supply passage 522 is branched into 2 sub-branches, and the branched gas supply passage is further branched into 2 sub-branches, forming the second gas distribution passage 512 in a tournament (route) shape. The second gas distribution passage 512 is connected to the gas supply pipe 51 on the downstream side of the valves V11 to V14 for purge gas.
Further, for example, the length and the inner diameter of each first gas distribution passage 511 from the upstream end (the end connected to the first common gas supply passage 521) to the downstream end (the end connected to the gas supply portion 4 or the gas supply pipe 51) are formed to be the same among the first gas distribution passages 511. Further, for example, the lengths and inner diameters of the respective second gas distribution passages 512 from the upstream end (the end connected to the second common gas supply passage 522) to the downstream end are formed to be the same among the second gas distribution passages 512. In this way, the process gas paths extending from the first gas distribution passage 511, the gas supply unit 4, the process spaces S1 to S4, and the exhaust passage 31 to the merged exhaust passage 32 are formed so as to have the same conductance with respect to the process gas distributed from the first common gas supply passage 521. The process gas paths extending from the second gas distribution passage 512, the gas supply unit 4, the process spaces S1 to S4, and the exhaust passage 31 to the merged exhaust passage 32 are formed so as to have the same conductance with respect to the process gas distributed from the second common gas supply passage 522.
In the case where a plurality of reaction gases are used, instead of the example described with reference to fig. 5, the reaction gases may be merged in advance in the gas supply system 50 and then supplied to the respective processing spaces S1 to S4. In this case, when one reaction gas is used, an example of 1 system in fig. 4 can be used as an actual piping configuration, and each gas supply pipe 51 is connected to each gas distribution passage 510. The gas distribution passage 510 merges with the common gas supply passage 52 and is connected to the gas supply system 50. In fig. 4, the valve for supplying the reaction gas is denoted as V2, and the flow rate adjusting unit is denoted as M2. In this case, the process gas paths extending from the gas distribution passage 510, the gas supply unit 4, the process spaces S1 to S4, and the exhaust passage 31 to the merged exhaust passage 32 are formed so as to have the same conductance for the process gas distributed from the common gas supply passage 52. As shown in fig. 5, the purge gas for bottom purge may be supplied from the gas supply source 56 to each of the processing spaces S1 to S4 through a gas supply passage 561 having a valve V4 and a flow rate adjusting unit M4.
The vacuum processing system 1 is provided with a control unit 8 including a computer. The control unit 8 includes a data processing unit including, for example, a program, a memory, and a CPU. The program is programmed with commands for transmitting control signals from the control unit 8 to the respective units of the vacuum processing system 1, and the film forming process described later is executed. The program is stored in a storage medium such as an optical disk, a hard disk, or an MO (magneto optical disk) and installed in the control unit 8.
Next, the transportation and processing of the wafer W in the vacuum processing system 1 will be briefly described. The wafer W placed in the carrier C of the carry-in/out port 11 is received by the transfer mechanism 120 in the carry-in/out unit 12 under a normal pressure atmosphere, and is transferred into the load lock chamber 122. Next, after the atmosphere in the load lock chamber 122 is switched from the normal pressure atmosphere to the vacuum atmosphere, the substrate transfer mechanism 15 of the vacuum transfer unit 13 receives the wafer W in the load lock chamber 122, and the wafer W is transferred to the predetermined vacuum processing apparatus 2 via the vacuum transfer chamber 14. The substrate transport mechanism 15 holds 2 wafers W in total in the first substrate holding portion 161 and the second substrate holding portion 162, respectively, as described above.
The gate valve G of the vacuum processing apparatus 2 for processing the wafer W being transferred is opened, and the first substrate holder 161 and the second substrate holder 162 are simultaneously inserted into the first transfer space T1 and the second transfer space T2, and the wafer W is simultaneously transferred to the transfer pins 25. Subsequently, the first substrate holder 161 and the second substrate holder 162 are retracted from the vacuum processing apparatus 2, and the gate valve G is closed.
Thereafter, for example, the position of the opening/closing valve 721 of the valve mechanism 7 is controlled to set the inside of the processing container 20 to a vacuum atmosphere of a predetermined pressure, and the respective stages 22 are raised to the processing position, so that the wafers W are heated by the respective heaters 24. Next, the reactive gas for film formation is supplied from each of the gas supply units 4 to the 4 process spaces S1 to S4 in the process container 20. Further, the high-frequency power sources 41 are turned on to supply high frequencies between the gas supply units 4 and the stage 22, respectively, and the gas supplied from the gas supply units 4 is turned into plasma to perform the film formation process. The plasma reaction gas is used to form a film on the surface of the wafer W.
Now, the flow of the process gas into and out of the process spaces S1 to S4 will be described with reference to fig. 4 and 6. The process gases (reaction gases) from the supply sources 541 and 542 are distributed and supplied to the flow chamber 44 of the gas supply unit 4 through the common gas supply passages 521 and 522 and the gas distribution passages 511 and 512. The process gases flowing into the flow chamber 44 are mixed with each other in the flow chamber 44, and the mixed process gases are discharged in a shower form to the wafers W on the respective stages 2 via the shower plate 43.
On the other hand, since the inside of the processing chamber 20 is exhausted through the common merged exhaust passage 32, the processing gases supplied to the processing spaces S1 to S4 are introduced into the flow passage 35 through the annular slit exhaust port 36 opened in the side peripheral portion thereof. The process gas flowing into the flow path 35 flows into the exhaust port 33 provided at the center of the process container 20. Then, the exhaust gas flows from the exhaust ports 33 to the merged exhaust passage 32 via the exhaust passages 31, and flows to the outside of the processing chamber 20, and is exhausted.
In this way, since the process gas flows outward in the process spaces S1 to S4, the film formation process is performed in a state in which the circumferential direction of the surface of the wafer W mounted on the mounting table 22 is uniform.
The flow conductance of the process gases distributed from the gas supply passages 521 and 522 through the process spaces S1 to S4 and the exhaust passages 31 to the process gas paths of the merged exhaust passage 32 from the gas distribution passages 511 and 512 are the same. Therefore, it was confirmed through experiments and simulations that the supply state and the exhaust state of the gas from the gas supply unit 4 are the same between the processing spaces S1 to S4. As described above, the flow rate of the process gas, the timing of supplying the process gas, and the flow direction of the process gas can be made the same among the 4 process spaces S1 to S4 with respect to the wafer W on each stage 22. As a result, the film formation process can be performed under the same conditions in the 4 processing spaces S1 to S4. Thus, in each of the processing spaces S1 to S4, even if the exhaust control is not performed individually, the exhaust states of the processing spaces S1 to S4 are the same, and as a result, the degrees of processing are the same. As described above, in each of the processing spaces S1 to S4, separate exhaust gas amount control is not necessary, and control is easy.
After the film formation process is performed for the predetermined time, the gate valve G of the processing chamber 20 is opened, the first substrate holder 161 and the second substrate holder 162 are inserted, and 4 wafers W are transferred to the first substrate holder 161 and the second substrate holder 162 at the same time. Next, the substrate transfer mechanism 15 holding the 4 wafers W is returned to the carrier C in the normal pressure atmosphere by the transfer mechanism 120 through the load lock chamber 122 of the carry-in/out unit 12.
In the vacuum processing apparatus 2, for example, after the film formation process is performed a predetermined number of times, a cleaning process may be performed. In the cleaning process, while exhausting the inside of the processing container 20, a cleaning gas is supplied into each of the processing spaces S1 to S4, and the plasma device 531 is turned on to supply the cleaning gas turned into plasma. Cleaning gases such as NF 3 The gas is converted into plasma by high-frequency power in the plasma device 531, and is cleaned by the fluorine radicals generated thereby. The valves V11 to V14, which are respectively provided on the 2 nd side and the like of the plasma device 531 and which are branched into 4, are opened, and the cleaning gas is supplied to the processing spaces S1 to S4 through the gas supply portions 4.
The cleaning gas flows from the processing spaces S1 to S4 to the outside of the processing container 20 through the slit exhaust ports 36, the flow paths 35, the exhaust ports 33, and the exhaust paths 31 and through the merged exhaust path 32. By supplying the cleaning gas in this manner, foreign matters adhering to the inside of the processing container 20 are removed, and are discharged to the outside of the processing container 20 together with the cleaning gas.
According to this embodiment, the intermediate wall portion 3 formed between the first conveyance space T1 and the second conveyance space T2 in which 2 processing spaces are arranged is formed as an exhaust passage 31 provided for each of the 4 processing spaces S1 to S4 and a merged exhaust passage 32 in which the exhaust passages 31 merge. As described above, the vacuum processing apparatus 2 can be simplified by providing the merged exhaust passage 32 for exhausting the 4 processing spaces S1 to S4 in the processing container 20. Further, since the merged exhaust passage 32 is provided and the vacuum pump 62 is connected to the merged exhaust passage 32 through the exhaust pipe 61, 1 exhaust pipe 61 is sufficient. Therefore, a large maintenance space can be secured in the lower portion of the processing container 20, and the maintainability can be improved. Further, since the merged exhaust passage 32 can be formed in the processing chamber 20, the total exhaust passage can be shortened and the exhaust efficiency can be improved while suppressing complication of the layout of the piping as compared with the case where the merged exhaust passage 32 is provided outside the processing chamber 20.
In contrast, as shown in patent document 1 (japanese patent application laid-open No. 2017-199735) and US2017/0029948A1 (hereinafter, also referred to as "reference"), in a structure in which a wafer conveyance mechanism is provided in a processing container for processing a plurality of wafers, an exhaust port cannot be provided in the center of the processing container. Therefore, the inside of the processing container has to be exhausted from the peripheral side of the processing container. For example, in the technique described in the comparative document, exhaust passages corresponding to 4 processing spaces in the processing container are formed in 4 locations on the peripheral side of the processing container. Therefore, the exhaust passages in which the 4 exhaust passages merge are provided below the processing container, and the apparatus becomes large. Further, in the lower side of the processing container, the layout of the exhaust piping becomes complicated, and a plurality of valves are required in some cases, and the maintenance space in the lower side of the processing container is pressed, which may cause an obstacle to the maintenance work.
Further, the 4 processing spaces S1 to S4 disposed in the first conveying space T1 and the second conveying space T2 are disposed in 180 ° rotational symmetry so as to surround the merged exhaust passage 32 when viewed from above. Therefore, the processing spaces S1 to S4 are disposed with the merged exhaust passage 32 as the center, and hence the design for reducing the size of the processing container 20 is facilitated. Further, the merged exhaust passage 32 can be shared with the respective processing spaces S1 to S4, and the exhaust states of the 4 processing spaces S1 to S4 can be made the same.
Further, since the merged exhaust passage 32 is provided to extend in the vertical direction in the intermediate wall portion 3, the installation space of the merged exhaust passage 32 becomes small in a plan view, which can contribute to the downsizing of the vacuum processing apparatus 2.
In the above description, 1 or more processing spaces may be disposed in the first transport space T1 of the processing container 20 in the extending direction, and 2 or more processing spaces may be disposed in the second transport space T2 in the extending direction. Fig. 7A shows an example in which 1 processing space S11 is disposed in the first conveyance space T1 in the extending direction (X' direction in fig. 7A), and 2 processing spaces S12 and S13 are disposed in the second conveyance space T2 in the extending direction. In the intermediate wall portion 3, an exhaust passage 31 provided for each of the 3 processing spaces S11 to S13 and a merged exhaust passage 32 where the exhaust passages 31 merge are formed.
Fig. 7B shows an example in which 3 processing spaces S21 to S23 are arranged in the first conveyance space T1 and 3 processing spaces S24 to S26 are arranged in the second conveyance space T2 in the extending direction in the processing container 20. In the intermediate wall portion 3, an exhaust passage 31 provided for each of the 6 processing spaces S21 to S26 and a merged exhaust passage 32 where the exhaust passages 31 merge are formed.
As shown in fig. 7C, a plurality of (e.g., 2) merged exhaust passages 32 may be formed in the processing chamber 20 so as to be aligned in the extending direction, for example, in the intermediate wall portion 3. In this example, 4 processing spaces S31 to S34 are arranged in the first conveyance space T1 along the extending direction, and 4 processing spaces S35 to S38 are arranged in the second conveyance space T2 along the extending direction. Further, formed in the intermediate wall portion 3 are: an exhaust passage 31 formed for each of the 4 processing spaces S31, S32, S35, and S36 immediately before in the extending direction; and a merged exhaust passage 32 in which the exhaust passages 31 merge. The intermediate wall portion 3 is formed with: an exhaust passage 31 formed in each of the 4 processing spaces S33, S34, S37, and S38 on the back side in the extending direction; and a merged exhaust passage 32 in which the exhaust passages 31 merge.
In the configuration shown in fig. 7A to 7C, since the exhaust passage 31 and the merged exhaust passage 32 are provided in the intermediate wall portion 3, the vacuum processing apparatus 2 can be downsized and simplified, and the maintainability can be improved.
The vacuum processing performed by the vacuum processing apparatus 2 is not limited to the film formation process by the CVD method, and may be a film formation process or an etching process by an ALD (Atomic Layer Deposition) method. The film formation process by the ALD method is a film formation process in which the following steps are repeatedly performed a plurality of times to laminate reaction products: a step of adsorbing the raw material gas on the wafer W; and a step of reacting the raw material gas adsorbed on the wafer W with the reaction gas to produce a reaction product. In the vacuum processing system 1, the number of the vacuum processing apparatuses 2 connected to the vacuum transfer chamber 14 may be 1.
The present embodiments are to be considered in all respects as illustrative and not restrictive. The above-described embodiments may be omitted, replaced, or changed in various ways without departing from the scope and spirit of the appended claims.

Claims (10)

1. A vacuum processing apparatus for performing vacuum processing by supplying a processing gas to a substrate disposed in a processing space in a vacuum atmosphere, the vacuum processing apparatus comprising:
a first conveying space and a second conveying space for conveying the substrate, which are formed at positions adjacent to each other in a processing container that performs the vacuum processing, and are each provided extending in a horizontal direction from a carry-in carry-out port formed in a side surface of the processing container; and
an intermediate wall portion formed between the first conveying space and the second conveying space in the extending direction,
wherein 1 or more of the processing spaces are disposed in the first conveyance space along the extending direction, and 2 or more of the processing spaces are disposed in the second conveyance space along the extending direction,
formed within the intermediate wall portion are: an exhaust passage provided to each of the 3 or more processing spaces disposed with the intermediate wall portion interposed therebetween; and a merged exhaust passage in which the exhaust passages are merged.
2. The vacuum processing apparatus according to claim 1, wherein:
2 processing spaces are disposed in the first conveyance space and the second conveyance space, respectively, and the 4 processing spaces are disposed so as to surround the merged exhaust passage in a 180 ° rotationally symmetrical manner when viewed from above.
3. The vacuum processing apparatus according to claim 1 or 2, wherein:
the merged exhaust passage extends in the vertical direction, and the exhaust passages are each provided so as to connect an exhaust port formed in an intermediate wall portion located on the outer side of the processing space to the merged exhaust passage.
4. The vacuum processing apparatus according to claim 3, wherein:
between each of the processing spaces and the exhaust port, there are provided: a slit-shaped slit exhaust port formed in a side peripheral portion of the processing space in a circumferential direction; and a flow path for circulating the process gas discharged from the slit exhaust port to the exhaust port.
5. The vacuum processing apparatus according to any one of claims 1 to 4, wherein:
the processing space is formed between a mounting table on which a substrate is mounted and a gas supply unit for supplying a processing gas into the processing space, wherein the gas supply unit has an opposing surface disposed to oppose the mounting table.
6. The vacuum processing apparatus according to claim 5, wherein:
comprises a gas distribution passage for distributing the processing gas supplied from the common gas supply passage to the gas supply parts of the processing spaces,
the respective process gas paths extending from the gas distribution passage, the gas supply unit, the process space, and the exhaust passage to the merged exhaust passage are formed so as to have the same conductance with respect to the process gas distributed from the gas supply passage.
7. A vacuum processing system, comprising:
a vacuum transfer unit, comprising: a vacuum transfer chamber; and a substrate transport mechanism disposed in the vacuum transport chamber and provided with a substrate holding section for transporting a substrate;
the vacuum processing apparatus according to any one of claims 1 to 6, wherein the substrate holder is connected to the vacuum transfer chamber, and the substrate holder is moved into the first transfer space and the second transfer space via the carry-in/out port, whereby the substrate can be transferred between the vacuum transfer chamber and the processing space;
a carry-in/out port on which a transport container for storing a substrate to be processed can be placed; and
and a feeding and discharging unit for feeding and discharging the substrate between the transport container and the vacuum transport unit.
8. The vacuum processing system of claim 7, wherein:
the substrate conveying mechanism includes:
a first substrate holding unit that holds the substrate at a position corresponding to each arrangement position of the processing space in the first transport space after entering the first transport space; and
and a second substrate holding unit that holds the substrate at a position corresponding to each arrangement position of the processing space in the second transport space after the substrate enters the second transport space.
9. The vacuum processing system of claim 8, wherein:
the substrate transport mechanism causes the first substrate holding portion and the second substrate holding portion to enter the first transport space and the second transport space at the same time, respectively, to transport the substrate.
10. A vacuum processing method for performing vacuum processing by supplying a processing gas to a substrate disposed in a processing space of a vacuum atmosphere, the vacuum processing method comprising:
and a step of introducing a substrate into the processing container in which the vacuum processing is performed, and accommodating the substrate in each of the processing spaces, wherein the processing container includes: a first conveying space and a second conveying space for conveying the substrate, which are formed at positions adjacent to each other in a processing container and are each provided extending in a horizontal direction from a carry-in carry-out port formed in a side surface of the processing container; and an intermediate wall portion formed between the first conveyance space and the second conveyance space in the extension direction, wherein 1 or more of the processing spaces are disposed in the first conveyance space in the extension direction, and 2 or more of the processing spaces are disposed in the second conveyance space in the extension direction,
supplying a process gas to each process space in which the substrate is accommodated; and
and discharging the process gas supplied to each of the process spaces by using an exhaust passage provided in each of the 3 or more process spaces formed in the intermediate wall and arranged with the intermediate wall interposed therebetween and a merged exhaust passage where the exhaust passages are merged.
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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7183635B2 (en) * 2018-08-31 2022-12-06 東京エレクトロン株式会社 SUBSTRATE TRANSFER MECHANISM, SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE TRANSFER METHOD
JP7210960B2 (en) * 2018-09-21 2023-01-24 東京エレクトロン株式会社 Vacuum processing apparatus and substrate transfer method
US11236424B2 (en) * 2019-11-01 2022-02-01 Applied Materials, Inc. Process kit for improving edge film thickness uniformity on a substrate
JP7308778B2 (en) * 2020-02-26 2023-07-14 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
JP7445509B2 (en) 2020-04-27 2024-03-07 東京エレクトロン株式会社 Substrate processing equipment and substrate transport method
TW202201602A (en) * 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing device
JP7486388B2 (en) 2020-09-17 2024-05-17 東京エレクトロン株式会社 Gas introduction structure and processing device
JP2022106560A (en) 2021-01-07 2022-07-20 東京エレクトロン株式会社 Processing module and processing method
CN114823263A (en) 2021-01-21 2022-07-29 东京毅力科创株式会社 Substrate processing apparatus
JP2022139929A (en) 2021-03-12 2022-09-26 東京エレクトロン株式会社 Substrate processing apparatus and control method for substrate processing apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101083203A (en) * 2006-05-31 2007-12-05 东京毅力科创株式会社 Plasma processing device and eletronode used
JP2011529136A (en) * 2008-07-23 2011-12-01 ニュー パワー プラズマ カンパニー，リミティッド Multiple substrate processing chamber and substrate processing system including the same
JP2013530516A (en) * 2010-04-30 2013-07-25 アプライド マテリアルズ インコーポレイテッド Twin chamber processing system

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0874028A (en) * 1994-09-01 1996-03-19 Matsushita Electric Ind Co Ltd Thin film forming method and device therefor
WO2000028587A1 (en) * 1998-11-09 2000-05-18 Tokyo Electron Limited Processing device
JP2003059999A (en) * 2001-08-14 2003-02-28 Tokyo Electron Ltd Treating system
JP2004131760A (en) 2002-10-08 2004-04-30 Canon Inc Vacuum treatment apparatus
JP4451076B2 (en) * 2003-04-16 2010-04-14 東京エレクトロン株式会社 Vacuum processing equipment
JP5139253B2 (en) * 2008-12-18 2013-02-06 東京エレクトロン株式会社 Vacuum processing device and vacuum transfer device
WO2011007753A1 (en) * 2009-07-14 2011-01-20 キヤノンアネルバ株式会社 Substrate processing device
JP6006643B2 (en) * 2011-01-20 2016-10-12 東京エレクトロン株式会社 Vacuum processing equipment
KR101530024B1 (en) 2013-12-20 2015-06-22 주식회사 유진테크 Substrate processing module, substrate processing apparatus and substrate transfering method including the same
JP6287240B2 (en) * 2014-01-17 2018-03-07 東京エレクトロン株式会社 Vacuum processing apparatus and vacuum processing method
US20170029948A1 (en) 2015-07-28 2017-02-02 Asm Ip Holding B.V. Methods and apparatuses for temperature-indexed thin film deposition
JP6089082B1 (en) 2015-09-29 2017-03-01 株式会社日立国際電気 Substrate processing apparatus, semiconductor device manufacturing method, program, and recording medium
JP2017199735A (en) 2016-04-25 2017-11-02 東京エレクトロン株式会社 Substrate exchange system, substrate exchange method and memorizing medium

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101083203A (en) * 2006-05-31 2007-12-05 东京毅力科创株式会社 Plasma processing device and eletronode used
JP2011529136A (en) * 2008-07-23 2011-12-01 ニュー パワー プラズマ カンパニー，リミティッド Multiple substrate processing chamber and substrate processing system including the same
JP2013530516A (en) * 2010-04-30 2013-07-25 アプライド マテリアルズ インコーポレイテッド Twin chamber processing system

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