CN101673693A - 高可靠厚膜混合集成电路键合系统及其制造方法 - Google Patents

高可靠厚膜混合集成电路键合系统及其制造方法 Download PDF

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CN101673693A
CN101673693A CN200910102792A CN200910102792A CN101673693A CN 101673693 A CN101673693 A CN 101673693A CN 200910102792 A CN200910102792 A CN 200910102792A CN 200910102792 A CN200910102792 A CN 200910102792A CN 101673693 A CN101673693 A CN 101673693A
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bonding
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gold
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aluminium
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CN101673693B (zh
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苏贵东
杨成刚
周正钟
殷坤文
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Guizhou Zhenhua Fengguang Semiconductor Co Ltd
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Abstract

本发明公开了一种高可靠厚膜混合集成电路键合系统，其特征在于该键合系统是间接键合的键合系统，即在金键合区表面，先增加一层阻挡层金属薄膜，再增加一层可与硅－铝丝进行高可靠性键合的金属薄膜，形成多层过渡性薄膜，再在其上面进行硅铝丝键合的键合系统。本发明有以下特点：①改善厚膜金导带键合区与硅铝丝的键合性能。②可以在同一金导带键合区上形成局部镍键合区或铝键合区，同时兼容金丝键合、硅铝丝键合。③采用金属掩模定位套准、高真空淀积成膜技术，对厚膜基片无任何损伤作用。应用于以金导带或银导带为基片的所有厚膜混合集成电路，可提高混合集成电路的可靠性，在航空、航天、航海、通讯、工业控制等领域有广阔的应用空间。

Description

高可靠厚膜混合集成电路键合系统及其制造方法
技术领域
本发明涉及半导体器件，进一步来说，涉及半导体器件构件的连接，尤其涉及厚膜混合集成电路的键合系统。
背景技术
人们知道，在集成电路生产中，用金属丝(即键合丝，如Al、Si-Al、Au、Cu等)将半导体芯片上的电极引线、混合集成电路基片上的电极引线、管壳底座上的外引线等采用热压键合法、超声键合法等方法相连的过程称为键合；在电极引线的某个部位，用于与键合丝进行键合的区域称为键合区；由键合区表层金属与键合丝经键合后组成的金属连接系统称为键合系统。
原有混合集成电路的键和系统是在陶瓷衬底基片上，采用金浆、银浆或钯-银浆料等导体浆料，采用丝网印刷的方式，按产品版图设计的要求，在基片上形成导带图形，经高温烧结后成型。在导带的端头、或指定的地方，形成键合区域、半导体芯片组装区域、或其它片式元器件组装区域，其余区域(包括厚膜阻带)用玻璃铀绝缘层进行表面保护。芯片(通常为铝键合区)、导带(通常为金或银键合区)、管脚(通常为金或镍键合区)之间采用金丝或硅铝丝进行键合联接，形成完整的电路连接。最后，在一定的气氛下，进行封帽即可。
其常规工艺流程如下：基片准备→基片清洗与烘干→导体和底层电容电极端头的印刷与烘干→烧结导体→电容或介质层的印刷与烘干→上层导体和电极端头的印刷与烘干→共烧介质和导体→印刷和烘干电阻→烧结电阻→调整电阻→包封电阻(印刷、烘干和烧结玻璃釉)→形成焊盘(键合区)导体图形→组装半导体芯片和其他分立元器件→用键合丝键合以完成电路连接→封帽→性能测试→老化筛选测试→包装入库。
原有技术存在以下缺陷：①银导带、钯银导带中，银容易氧化，且在长期通电情况下，容易产生电迁移现象，严重影响器件的可靠性，通常表现为键合强度的衰退。②金导带在大电流情况下，在Au-Al键合系统中，键合接触区域金层电迁移现象明显，在Au-Al间容易形成“紫斑”，其产物成份为AuAl2，造成Au-Al键合时形成的合金点疏松和空洞化，最终键合力大幅下降。③金-铝键合系统在高温下，由于金向铝中扩散，Au-Al间形成“白斑”，其产物为Au2Al、Au5Al2、Au5Al，形成一层脆而绝缘的金属间化合物(即金铝化合物)，这种产物可以使合金点电导率大幅降低，严重时可以形成开路。④芯片(表面金属层为铝层)、导带(金导带或银导带)、引线柱(镀金或镀镍)、引线(金丝或硅铝丝)之间，在键合工艺中很难兼容各自的要求。
经检索，目前涉及集成电路键合系统的中国专利申请件仅有3件，即200510003089.8号“提高集成电路内引线键合可靠性的方法”、200610031768.0号“超声键合过程的键合力监测系统”、200620201098.8号“键合头装置”但这些专利与本发明并无关系，目前尚无高可靠厚膜混合集成电路键合系统的报道。
发明内容
本发明的目的就是提供一种高可靠厚膜混合集成电路键合系统，以取代可靠性较差的键合系统，以克服原有技术的种种缺陷。
本发明的又一目的是提供高厚膜混合集成电路键合系统的制造方法，使其能够广泛应用于电子工业。
发明人经过试验研究，发现由于厚膜混合集成电路的常规键合系统——金-铝(Au-Al)键合系统，在高温下容易向其他金属扩散，产生一层脆而绝缘的金属间化合物(主要是Au2Al化合物)；在大电流下容易发生电迁移，产生一层脆而绝缘的金属间化合物(主要是AuAl2化合物)。两者均能造成Au-Al接触电阻变大，影响电性能，严重时产生脱键现象，严重影响器件的可靠性。因此，必须寻求一种新的工艺，在厚膜金导带键合区上，对必需用硅-铝丝进行键合的区域，形成电性能、温度性能良好的、能同时兼容铝和金的、在形成过程中对导带和阻带无化学影响的过渡薄膜，直接在过渡薄膜上进行键合，以取代可靠性较差的金-铝(Au-Al)键合系统。具体来说，如何将金-铝(Au-Al)键合系统转换为高可靠集成电路键合的铝-铝(Al-Al)键合系统、铝-镍(Al-Ni)键合系统，是发明的主要任务。
为达到上述发明目的，发明人提供的高可靠厚膜混合集成电路键合系统是间接键合的键合系统，即在金键合区表面，先增加一层阻挡层金属薄膜，再增加一层可与硅-铝丝进行高可靠性键合的金属薄膜，形成多层过渡性薄膜，再在其上面进行硅铝丝键合的键合系统；该键合系统在同一金导带键合区上可形成局部镍键合区或铝键合区，形成双键合区，同时兼容金丝键合、硅铝丝键合。
上述形成多层过渡性薄膜的过程，为避免厚膜导带和厚膜电阻受到化学方面的影响，是采用物理方法实现的；具体来说，是采用金属掩模定位套准、高真空淀积成膜技术，整个多层薄膜一次性成型。
上述的金属掩模是将基片上选定的键合区域图形转移到金属箔上，并对选定区域进行开孔，以便溅射或镀膜。
厚膜混合集成电路键合系统的制造方法是：选用镍或铝作为键合层，选用铬作为中间过渡层；在完成厚膜金导带、厚膜电阻的基片上，通过掩模材料掩模的方式，用溅射或真空镀膜的成膜工艺方法，在基片键合区域溅射或镀上一层薄膜过渡层，形成金-铬-镍(Au-Cr-Ni)或金-铬-镍-铬-铝(Au-Cr-Ni-Cr-Al)的复合膜层结构，再通过常规工艺得到厚膜混合集成电路键合系统。这些工艺可表示为：制作光刻掩模版→制作金属掩模版→金属掩模板与厚膜基片定位套准并固定→溅射或真空镀膜成膜→退火→键合。
上述掩模材料采用不锈钢或坡莫合金即铁镍合金，厚度小于100μm，Ni材选用0号Ni。
上述成膜过程使用的设备是磁控溅射台或真空镀膜机；夹具采用不锈钢制作；镍膜或铝膜厚度1～3μm，掩模套准精度小于10μm。
发明人指出：选择Cr作过渡层，主要是Cr与Au和Ni具有很好的亲合力，通过在N2气氛中退火后亲合力更强，同时，能有效地阻挡Au向Ni层中的扩散。
发明人还指出：Al与Al键合属同质键合，是键合工艺中理想的键合系统。
本发明的高可靠厚膜混合集成电路键合系统有以下特点：①改善厚膜金导带键合区与硅-铝丝的键合性能，形成高可靠性键合系统。在实践上提高了功率型混合集成电路长期充分可靠工作的能力。②通过改变金属掩模通孔尺寸的大小，可以在同一金导带键合区上形成局部镍键合区或铝键合区，可同时兼容金丝键合(键合区与镀金管脚之间)、硅-铝丝键合(基片键合区与芯片键合区之间)，形成高可靠完美键合系统。③采用金属掩模定位套准、高真空淀积成膜技术，一次性完成薄膜物理成型，无中间化学过程，对厚膜基片无任何损伤作用，具有极高的安全性和可靠性。应用于原以金导带或银导带为基片的所有厚膜混合集成电路，可大大提高混合集成电路的可靠性，特别是在航空、航天、航海、通讯、工业控制等领域，具有广阔的应用空间。
附图说明
以下附图用以比较本发明与原有技术的区别，并进一步说明本发明的键合系统。
图1为原始厚膜基片示意图，图2为原有技术的管脚端面镀金键合系统示意图，图3为原有技术的管脚端面镀镍键合系统示意图，图4为金属掩模与薄膜溅射示意图，图5为管脚端面镀镍的键合系统示意图，图6为管脚端面镀金的键合系统示意图。
图2中键合丝全部采用金丝；图3中键合丝全部采用硅铝丝；图5中键合丝全部采用硅铝丝；图6中与芯片连接键合丝采用硅铝丝，与管脚连接的键合丝采用金丝。
具体实施方式
实施例：
贵州振华风光半导体公司研发的FH0186功率运算放大器属厚膜混合集成电路，导带及键合区材料均采用常规的金浆料在高温下烧结而成，管脚端面键合区采用镀金或镀镍的方式形成，半导体集成电路芯片表面键合区由常规铝材料形成。过去，键合丝的选材非常困难，不管是采用金丝还是硅铝丝，都会存在薄弱的金-铝(Au-Al)键合系统，整个键合工艺无法兼容。不能满足相关用户的使用要求。
经研究，公司对原始厚膜基片，通过超声清洗干净、并烘干后，与金属掩模定位、套准并用专用夹具进行固定，在高真空磁控溅射台中，在选定的键合区域形成所需的多层金属薄膜，再在300℃左右的高温下进行退火，即可得到所需的厚膜基片。此时，键合系统转化为常规的、高可靠性的金-金(Au-Au)、铝-铝(Al-Al)或铝-镍(Al-Ni)键合系统，彻底取消了可靠性极差的金-铝(Au-Al)键合系统，产品达到标准GJB2438A混合集成电路通用规范、GJB548B微电子器件试验方法和程序中规定的H级(含H级)以上质量水平，达到了用户的使用要求。
其工艺流程如下：
基片准备→基片清洗与烘干→厚膜导体浆料的印刷与烘干(150℃、10min)→烧结导体(875℃、12min，总时间45min)→印刷和烘干电阻浆料(150℃、10min)→烧结电阻(850℃、10min，总时间35min)→调整电阻(激光调阻)→玻璃釉的印刷和烘干(150℃、10min)→烧结玻璃釉(500℃、10min，总时间30min)→形成焊盘(键合区)导体图形→完成厚膜基片制作。
厚膜基片清洗、烘干(100℃、30min)→在专用不锈钢夹具中，用已制作好的金属掩模进行定位、套准与固定→放于磁控溅射台中进行安装固定→在溅射源放置位置分别放入已清洁烘干的Cr和Ni→关闭溅射室并抽真空(真空度在2×10-3Pa以下)→真空烘烤(200℃、20min)→薄膜溅射(Cr：0.6μm、Ni：2.0μm)→在N2气氛中进行退火处理(300℃、120min)→完成键合区薄膜化厚膜基片的制作。
管壳底座引线柱端面电镀镍→管壳清洗、烘干→将键合区薄膜化后的厚膜基片组装到底座上→组装半导体芯片和其他分立元器件→用硅-铝丝键合以完成电路连接→封帽→性能测试→老化筛选测试→包装入库。
结果，彻底取消了金-铝(Au-Al)键合系统，工艺兼容性良好。

Claims (6)

1一种高可靠厚膜混合集成电路键合系统，其特征在于该键合系统是间接键合的键合系统，即在金键合区表面，先增加一层阻挡层金属薄膜，再增加一层可与硅-铝丝进行高可靠性键合的金属薄膜，形成多层过渡性薄膜，再在其上面进行硅铝丝键合的键合系统；在同一金导带键合区上可形成局部镍键合区或铝键合区，形成双键合区，同时兼容金丝键合、硅铝丝键合。
2如权利要求1所述的键合系统，其特征在于所述形成多层过渡性薄膜的过程是采用物理方法实现的；具体来说，是采用金属掩模定位套准、高真空淀积成膜技术，整个多层薄膜一次性成型。
3如权利要求1所述的键合系统，其特征在于所述金属掩模是将基片上选定的键合区域图形转移到金属箔上，并对选定区域进行开孔，以便溅射或镀膜。
4如权利要求1所述键合系统的制造方法，其特征是：选用镍或铝作为键合层，选用铬作为中间过渡层；在完成厚膜金导带、厚膜电阻的基片上，通过掩模定位套准的方式，用溅射或真空镀膜的成膜工艺方法，在基片金键合区域溅射或镀上一层薄膜过渡层，形成金-铬-镍或金-铬-镍-铬-铝的复合膜层结构，再通过常规工艺得到厚膜混合集成电路键合系统；所述方法可表示为：制作光刻掩模版→制作金属掩模版→金属掩模板与厚膜基片定位套准并固定→溅射或真空镀膜成膜→退火→键合。
5如权利要求4所述键合系统的制造方法，其特征在于所述掩模板采用不锈钢或坡莫合金即铁镍合金，其厚度小于100μm，Ni材选用0号Ni。
6如权利要求4所述键合系统的制造方法，其特征在于所述成膜过程使用的设备是磁控溅射台或真空镀膜机；夹具采用不锈钢制作；镍膜或铝膜厚度1～3μm，掩模套准精度小于10μm。
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