CN101665918B - 成膜方法和成膜装置 - Google Patents

成膜方法和成膜装置 Download PDF

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Publication number
CN101665918B
CN101665918B CN2009101710789A CN200910171078A CN101665918B CN 101665918 B CN101665918 B CN 101665918B CN 2009101710789 A CN2009101710789 A CN 2009101710789A CN 200910171078 A CN200910171078 A CN 200910171078A CN 101665918 B CN101665918 B CN 101665918B
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gas
film
spray head
deposition system
mentioned
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Chinese (zh)
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CN101665918A (zh
Inventor
山﨑英亮
池田恭子
瀬川澄江
泽田郁夫
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2009101710789A 2008-09-05 2009-09-04 成膜方法和成膜装置 Active CN101665918B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008229073 2008-09-05
JP2008229073A JP5439771B2 (ja) 2008-09-05 2008-09-05 成膜装置
JP2008-229073 2008-09-05

Publications (2)

Publication Number Publication Date
CN101665918A CN101665918A (zh) 2010-03-10
CN101665918B true CN101665918B (zh) 2011-08-17

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Family Applications (1)

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CN2009101710789A Active CN101665918B (zh) 2008-09-05 2009-09-04 成膜方法和成膜装置

Country Status (3)

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JP (1) JP5439771B2 (ja)
KR (1) KR101204211B1 (ja)
CN (1) CN101665918B (ja)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9388494B2 (en) * 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
US9399228B2 (en) * 2013-02-06 2016-07-26 Novellus Systems, Inc. Method and apparatus for purging and plasma suppression in a process chamber
US9449795B2 (en) * 2013-02-28 2016-09-20 Novellus Systems, Inc. Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor
CN103320865A (zh) * 2013-06-21 2013-09-25 光垒光电科技（上海）有限公司 喷淋头以及气相沉积设备
JP6591735B2 (ja) * 2014-08-05 2019-10-16 株式会社Ｆｕｊｉ プラズマ発生装置
KR101465640B1 (ko) * 2014-08-08 2014-11-28 주식회사 펨빅스 불화알루미늄 생성방지막이 형성된 ｃｖｄ 공정챔버 부품
CN105225914B (zh) * 2015-08-25 2018-01-23 沈阳拓荆科技有限公司 一种改善晶圆表面薄膜形貌的半导体等离子处理装置
US10781519B2 (en) * 2018-06-18 2020-09-22 Tokyo Electron Limited Method and apparatus for processing substrate
JP6860537B2 (ja) * 2018-09-25 2021-04-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ クリーニング方法、半導体装置の製造方法、基板処理装置、およびプログラム
CN110970285B (zh) * 2019-12-16 2022-02-22 广东省半导体产业技术研究院 一种维持反应腔良性环境的方法
CN111105994B (zh) * 2019-12-17 2023-01-17 广东省半导体产业技术研究院 一种制备AlN外延层的方法
CN113088928A (zh) * 2019-12-23 2021-07-09 上海思擎企业管理合伙企业(有限合伙) 内筒壁吹扫装置
CN114289355B (zh) * 2021-11-19 2023-02-03 杭州中欣晶圆半导体股份有限公司 一种减少晶圆表面颗粒吸附的成膜系统及成膜方法
CN117089927B (zh) * 2023-10-14 2024-01-23 芯三代半导体科技(苏州)有限公司 一种薄膜外延设备的气体吹扫系统及吹扫方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1692177A (zh) * 2003-01-31 2005-11-02 东京毅力科创株式会社 半导体处理用载置台装置、成膜装置和成膜方法
CN1807681A (zh) * 2005-01-20 2006-07-26 三星Sdi株式会社 蒸镀装置及利用该蒸镀装置的蒸镀方法
CN1906326A (zh) * 2003-11-25 2007-01-31 应用材料股份有限公司 氮化硅的热化学气相沉积

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3476638B2 (ja) * 1996-12-20 2003-12-10 東京エレクトロン株式会社 Ｃｖｄ成膜方法
US5849092A (en) * 1997-02-25 1998-12-15 Applied Materials, Inc. Process for chlorine trifluoride chamber cleaning
JP4038599B2 (ja) * 1997-05-15 2008-01-30 東京エレクトロン株式会社 クリーニング方法
KR20010062209A (ko) * 1999-12-10 2001-07-07 히가시 데쓰로 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치
JP2002167673A (ja) 2000-09-21 2002-06-11 Tokyo Electron Ltd Ｃｖｄ成膜方法および付着物の除去方法
JP4222086B2 (ja) 2003-04-07 2009-02-12 東京エレクトロン株式会社 熱処理装置
JP5028957B2 (ja) * 2005-12-28 2012-09-19 東京エレクトロン株式会社 成膜方法及び成膜装置並びに記憶媒体
WO2008007675A1 (fr) * 2006-07-11 2008-01-17 Tokyo Electron Limited procédé de formation de film, procédé de nettoyage, et dispositif de formation de film

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1692177A (zh) * 2003-01-31 2005-11-02 东京毅力科创株式会社 半导体处理用载置台装置、成膜装置和成膜方法
CN1906326A (zh) * 2003-11-25 2007-01-31 应用材料股份有限公司 氮化硅的热化学气相沉积
CN1807681A (zh) * 2005-01-20 2006-07-26 三星Sdi株式会社 蒸镀装置及利用该蒸镀装置的蒸镀方法

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Publication number Publication date
KR20100029041A (ko) 2010-03-15
JP2010059522A (ja) 2010-03-18
CN101665918A (zh) 2010-03-10
KR101204211B1 (ko) 2012-11-26
JP5439771B2 (ja) 2014-03-12

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