CN101661863B - 等离子体处理装置和等离子体处理方法 - Google Patents

等离子体处理装置和等离子体处理方法 Download PDF

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Publication number
CN101661863B
CN101661863B CN2009101750875A CN200910175087A CN101661863B CN 101661863 B CN101661863 B CN 101661863B CN 2009101750875 A CN2009101750875 A CN 2009101750875A CN 200910175087 A CN200910175087 A CN 200910175087A CN 101661863 B CN101661863 B CN 101661863B
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electrode
frequency
plasma
high frequency
inductor
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CN101661863A (zh
Inventor
松本直树
舆水地盐
早川欣延
花冈秀敏
岩田学
田中谕志
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
CN2009101750875A 2006-03-30 2007-03-30 等离子体处理装置和等离子体处理方法 Active CN101661863B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006092908A JP5031252B2 (ja) 2006-03-30 2006-03-30 プラズマ処理装置
JP2006-092908 2006-03-30
JP2006092908 2006-03-30

Related Parent Applications (1)

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CNA2007100913503A Division CN101047114A (zh) 2006-03-30 2007-03-30 等离子体处理装置和等离子体处理方法

Publications (2)

Publication Number Publication Date
CN101661863A CN101661863A (zh) 2010-03-03
CN101661863B true CN101661863B (zh) 2013-05-29

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CN2009101750875A Active CN101661863B (zh) 2006-03-30 2007-03-30 等离子体处理装置和等离子体处理方法
CNA2007100913503A Pending CN101047114A (zh) 2006-03-30 2007-03-30 等离子体处理装置和等离子体处理方法

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Country Status (5)

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EP (1) EP1840937B1 (enExample)
JP (1) JP5031252B2 (enExample)
KR (1) KR100926380B1 (enExample)
CN (2) CN101661863B (enExample)
TW (1) TWI431683B (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5371238B2 (ja) * 2007-12-20 2013-12-18 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP4898718B2 (ja) * 2008-02-08 2012-03-21 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP5231038B2 (ja) 2008-02-18 2013-07-10 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法、ならびに記憶媒体
CN102273329B (zh) 2008-12-10 2014-09-10 朗姆研究公司 清洁硅电极的沉浸式氧化和蚀刻方法
US9887069B2 (en) 2008-12-19 2018-02-06 Lam Research Corporation Controlling ion energy distribution in plasma processing systems
US8992723B2 (en) * 2009-02-13 2015-03-31 Applied Material, Inc. RF bus and RF return bus for plasma chamber electrode
JP5591573B2 (ja) 2009-03-30 2014-09-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
KR101173293B1 (ko) * 2009-12-31 2012-08-13 엘아이지에이디피 주식회사 기판 처리 장치의 벽면 에너지 손실 저감 장치
US9174296B2 (en) * 2010-10-20 2015-11-03 Lam Research Corporation Plasma ignition and sustaining methods and apparatuses
TWI646869B (zh) 2011-10-05 2019-01-01 美商應用材料股份有限公司 對稱電漿處理腔室
US8872525B2 (en) * 2011-11-21 2014-10-28 Lam Research Corporation System, method and apparatus for detecting DC bias in a plasma processing chamber
JP6018757B2 (ja) 2012-01-18 2016-11-02 東京エレクトロン株式会社 基板処理装置
JP6009171B2 (ja) 2012-02-14 2016-10-19 東京エレクトロン株式会社 基板処理装置
WO2014064779A1 (ja) * 2012-10-24 2014-05-01 株式会社Ｊｃｕ プラズマ処理装置及び方法
WO2014185051A1 (ja) 2013-05-14 2014-11-20 パナソニックＩｐマネジメント株式会社 液体処理装置、液体処理方法及びプラズマ処理液
JP6584329B2 (ja) * 2016-01-19 2019-10-02 東京エレクトロン株式会社 プラズマ処理装置
CN107305830B (zh) * 2016-04-20 2020-02-11 中微半导体设备(上海)股份有限公司 电容耦合等离子体处理装置与等离子体处理方法
JP6902450B2 (ja) * 2017-10-10 2021-07-14 東京エレクトロン株式会社 プラズマ処理方法
KR101990577B1 (ko) * 2017-12-22 2019-06-18 인베니아 주식회사 필드 조절 유닛 및 이를 포함하는 플라즈마 처리장치
KR101979223B1 (ko) * 2017-12-22 2019-05-17 인베니아 주식회사 플라즈마 처리장치
TW202013581A (zh) * 2018-05-23 2020-04-01 日商東京威力科創股份有限公司 電漿處理裝置
JP7306886B2 (ja) * 2018-07-30 2023-07-11 東京エレクトロン株式会社 制御方法及びプラズマ処理装置
CN111199860A (zh) 2018-11-20 2020-05-26 江苏鲁汶仪器有限公司 一种刻蚀均匀性调节装置及方法
US11361947B2 (en) * 2019-01-09 2022-06-14 Tokyo Electron Limited Apparatus for plasma processing and method of etching
US11189517B2 (en) * 2019-04-26 2021-11-30 Applied Materials, Inc. RF electrostatic chuck filter circuit
CN110379701A (zh) * 2019-07-24 2019-10-25 沈阳拓荆科技有限公司 具有可调射频组件的晶圆支撑座
WO2021158451A1 (en) * 2020-02-04 2021-08-12 Lam Research Corporation Radiofrequency signal filter arrangement for plasma processing system
CN113936985B (zh) * 2020-07-14 2025-03-11 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
WO2022202702A1 (ja) * 2021-03-24 2022-09-29 東京エレクトロン株式会社 プラズマ処理装置及びフィルタユニット
CN117448756B (zh) * 2022-07-19 2026-02-24 友威科技股份有限公司 具升降式电极的连续电浆制程系统
CN115607263B (zh) * 2022-09-30 2023-07-11 邦士医疗科技股份有限公司 一种等离子射频手术系统
CN120261246A (zh) * 2024-01-02 2025-07-04 北京北方华创微电子装备有限公司 射频功率输出电路和半导体工艺设备

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1620711A (zh) * 2001-06-29 2005-05-25 拉姆研究公司 用于等离子体反应器中的射频去耦和偏压控制的设备和方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6744212B2 (en) * 2002-02-14 2004-06-01 Lam Research Corporation Plasma processing apparatus and method for confining an RF plasma under very high gas flow and RF power density conditions
JP3905870B2 (ja) * 2003-08-01 2007-04-18 東京エレクトロン株式会社 プラズマ処理装置
US7951262B2 (en) 2004-06-21 2011-05-31 Tokyo Electron Limited Plasma processing apparatus and method
JP4699127B2 (ja) * 2004-07-30 2011-06-08 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US20060037704A1 (en) 2004-07-30 2006-02-23 Tokyo Electron Limited Plasma Processing apparatus and method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1620711A (zh) * 2001-06-29 2005-05-25 拉姆研究公司 用于等离子体反应器中的射频去耦和偏压控制的设备和方法

Also Published As

Publication number Publication date
EP1840937A1 (en) 2007-10-03
TW200802598A (en) 2008-01-01
TWI431683B (zh) 2014-03-21
KR100926380B1 (ko) 2009-11-11
CN101047114A (zh) 2007-10-03
KR20070098643A (ko) 2007-10-05
JP2007266533A (ja) 2007-10-11
CN101661863A (zh) 2010-03-03
JP5031252B2 (ja) 2012-09-19
EP1840937B1 (en) 2014-05-07

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