CN101645434A - Electric fuse device and manufacturing method thereof - Google Patents
Electric fuse device and manufacturing method thereof Download PDFInfo
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- CN101645434A CN101645434A CN200910053709A CN200910053709A CN101645434A CN 101645434 A CN101645434 A CN 101645434A CN 200910053709 A CN200910053709 A CN 200910053709A CN 200910053709 A CN200910053709 A CN 200910053709A CN 101645434 A CN101645434 A CN 101645434A
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- out area
- electric fuse
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Abstract
The invention provides an electric fuse device and a manufacturing method thereof. The electric fuse device is arranged on an insulating layer of a substrate and comprises a polysilicon layer and a silicide layer formed on the polysilicon layer. In the prior art, the polysilicon layer is doped only in one type or in two different types to form a PN knot or form an undoped or doped area between twoareas with opposite doping types, which causes a problem of minor resistance after fusing. Doping in the same type is performed in a first leading-out area and a second leading-out area at two sidesof the polysilicon layer, and doping in different types is performed in the middle area so as to form two PN knots in opposite connection on the polysilicon layer. In the invention, the resistance ofthe polysilicon layer can be greatly improved, and a bidirectional high-impedance passage is directly formed on the polysilicon layer, thereby increasing the resistance of the electric fuse device after fusing.
Description
Technical field
The present invention relates to fuse-wire device, relate in particular to a kind of electric fuse device and manufacture method thereof.
Background technology
Electric fuse device is device commonly used in the semiconductor integrated circuit, and it is to utilize electromigration (ElectronMigration, EM) effect produces and opens circuit.Electron mobility effect is to take advantage of moving of metal ion that effect causes via adding of temperature and electronic impact (Electron Wind).Electric fuse device resistance after applying the appropriate voltage meltdown becomes very big, can fuse by the mode that applies appropriate voltage before the integrated circuit encapsulation or after packaged.
Electric fuse mainly contains two purposes: the one, and be used to start redundant circuit and substitute defective circuit on wafer, thereby can effectively improve process rate, fuse is connected on the redundant circuit under this kind situation, when the device of damage or circuit unit are arranged in detecting circuit, select redundant circuit to substitute the fuse failure that these are connected on the redundant circuit by applying appropriate voltage; Fuse also can be used for the integrated circuit programmed functions, earlier metal interconnection, device array and programmed circuit (comprising fuse-wire device) are processed on chip when realizing this kind function, carrying out the data input by the outside then is that sequencing is made into unique various chip with standard chips, and this kind situation can be saved research and development and cost of manufacture greatly.Fuse appears at programmable read only memory (Programmable Read Only Memory in a large number in the application aspect the integrated circuit programmed functions, PROM) on, it produces writing of the information of finishing 1 that opens circuit by the high voltage blow out fuse, and the fuse that does not disconnect keeps connection status, is state 0.
Referring to Fig. 1 and Fig. 2, it is respectively the composition structural representation and the vertical view of electric fuse device of the prior art, as shown in the figure, electric fuse device of the prior art is produced on the substrate 1, substrate 1 top has an insulating barrier 10 (can guarantee the insulation property of substrate 1 preferably), this electric fuse device comprises polysilicon layer 2 and the silicide layer 3 that is arranged on the substrate 1, polysilicon layer 2 is formed on the insulating barrier 10, silicide layer 3 is formed on the polysilicon layer 2, also is formed with dielectric layer 4 on the silicide layer 3.Polysilicon layer 2 comprises the first draw-out area A1, mesozone B and the second draw-out area A2 that arranges successively.The first draw-out area A1, mesozone B and the second draw-out area A2 have nano level width up to a hundred, the width of mesozone B is all narrower than the width of the first draw-out area A1 and the second draw-out area A2 usually, also can make as required and equate or slightly wide that striking point during electric fuse device fusing generally all is positioned on the B of mesozone.Be provided with the contact hole (not shown) that connects to silicide layer 3 in the dielectric layer 4, be formed with in the described contact hole and be connected with silicide layer 3 and its metal plug 40a and 40b that draws.
Can mix P type, N type or mix and form a PN junction of polysilicon layer 2 in the prior art can also form opposite two interregionally the forming one again and undope or doped regions of doping type on polysilicon layer 2.So will cause the resistance of polysilicon layer 2 big inadequately, when on metal plug 40a and 40b, applying appropriate voltage fusing electric fuse device, may be because the conducting of polysilicon layer or unidirectional conducting reduce the resistance after fusing.
Therefore, how improving the resistance after electric fuse device when fusing and the fusing, is the direction that industry is being made great efforts always.
Summary of the invention
The object of the present invention is to provide a kind of electric fuse device and manufacture method thereof, can effectively improve resistance after the electric fuse device fusing by described device and manufacture method thereof.
The object of the present invention is achieved like this: a kind of electric fuse device, be arranged on the insulating barrier of substrate, it comprises polysilicon layer and is formed on silicide layer on the polysilicon layer, described polysilicon layer has first draw-out area, mesozone and second draw-out area of arranging successively, described first draw-out area is identical with the doping type of second draw-out area, and is opposite with the doping type of mesozone.
In above-mentioned electric fuse device, also be formed with a dielectric layer on the described silicide layer, corresponding first and second draw-out areas of described dielectric layer are respectively arranged with the contact hole that connects to silicide layer, are formed with the metal plug that is electrically connected to silicide layer in the described contact hole.
In above-mentioned electric fuse device, described silicide layer is titanium silicide, cobalt silicide, nickle silicide, tantalum silicide or tungsten silicide.
In above-mentioned electric fuse device, mix for the N type in described first draw-out area and second draw-out area, mix for the P type in described mesozone.
In above-mentioned electric fuse device, mix for the P type in described first draw-out area and second draw-out area, mix for the N type in described mesozone.
In above-mentioned electric fuse device, the thickness range of described silicide layer is 100 to 1000 dusts.
The present invention also provides a kind of manufacture method of above-mentioned electric fuse device, said method comprising the steps of: a, form polysilicon layer on an insulating barrier of substrate; B, employing ion implantation technology form first draw-out area, mesozone and second draw-out area successively in polysilicon layer, described first draw-out area is identical with the doping type of second draw-out area, and is opposite with the doping type of mesozone; C, on polysilicon layer, form silicide layer.
In the manufacture method of above-mentioned electric fuse device, described method is further comprising the steps of: d, deposition one dielectric layer on silicide layer; E, on this dielectric layer, make the contact hole connect to silicide layer; F, in contact hole, make metal plug.
With the doping of in the prior art polysilicon layer only being carried out one type, or carry out two kinds of dissimilar doping and form a PN junction or form opposite two interregionally the having one and undope or doped regions is compared of doping type, the doping of same kind is carried out in first draw-out area and second draw-out area of the present invention both sides on polysilicon layer, and carry out dissimilar doping in the mesozone, thereby on polysilicon layer, form two PN junctions that oppositely connect, so can greatly improve the resistance of polysilicon layer, thereby increase the resistance after the electric fuse device fusing, avoid forming impedance path at polysilicon layer.
Description of drawings
Electric fuse device of the present invention and manufacture method thereof are provided by following embodiment and accompanying drawing.
Fig. 1 is the composition structural representation of electric fuse device in the prior art;
Fig. 2 is the vertical view of electric fuse device in the prior art;
Fig. 3 is the composition structural representation of electric fuse device of the present invention;
Fig. 4 is the equivalent circuit diagram of electric fuse device first embodiment of the present invention;
Fig. 5 is the equivalent circuit diagram of electric fuse device second embodiment of the present invention;
Fig. 6 is the flow chart of electric fuse device manufacture method of the present invention.
Embodiment
Below will be described in further detail electric fuse device of the present invention and manufacture method thereof.
Referring to Fig. 3, in conjunction with referring to Fig. 2, electric fuse device of the present invention is arranged on the substrate 1, and substrate 1 top has insulating barrier 10, and described electric fuse device comprises polysilicon layer 2 ' and silicide layer 3.Polysilicon layer 2 ' is formed on the insulating barrier 10, and silicide layer 3 is formed on the polysilicon layer 2 ', also is formed with dielectric layer 4 on the silicide layer 3.Described silicide layer 3 is titanium silicide, cobalt silicide, nickle silicide, tantalum silicide or tungsten silicide etc.The silica (comprising dried oxygen technology, wet oxygen technology or dried wet oxygen hybrid technique) that described dielectric layer 4 is made for silicon nitride, boron-phosphorosilicate glass (BPSG), common process or use silica that tetraethoxysilane (TEOS) makes etc.Below will the detailed member of electric fuse device of the present invention be elaborated.
Described polysilicon layer 2 ' has the first draw-out area A1 ', mesozone B ' and the second draw-out area A2 ' that arranges successively, and the described first draw-out area A1 ' is identical with the doping type of the second draw-out area A2 ', and is opposite with the doping type of mesozone B '.Mesozone B ', the first draw-out area A1 ' and the second draw-out area A2 ' all have nano level width up to a hundred, the width of mesozone B is all narrower than the width of the first draw-out area A1 ' and the second draw-out area A2 ' usually, also can make as required and equate or slightly wide that striking point during electric fuse device fusing generally all is positioned on the B ' of mesozone.The thickness of polysilicon layer 2 ' can be chosen to the scope of several thousand dusts at the hundreds of dust, and in a preferred embodiment of the present invention, the thickness of polysilicon layer 2 ' is set to 2000 to 3000 dusts.The thickness range of silicide layer 3 can be 100 to 1000 dusts.Be provided with the contact hole (not shown) that connects to silicide layer 3 in the dielectric layer 4, be formed with in the described contact hole and be connected with silicide layer 3 and its metal plug 40a and 40b that draws.
In first embodiment of electric fuse device of the present invention, the described first draw-out area A1 ' and the second draw-out area A2 ' are the N type, described mesozone B ' is the P type, this moment electric fuse device equivalent circuit diagram as shown in Figure 4, polysilicon layer 2 ' equivalence this moment is diode D1 and the D2 that two positive poles are connected in series.
In second embodiment of electric fuse device of the present invention, the described first draw-out area A1 ' and the second draw-out area A2 ' are the P type, described mesozone B ' is the N type, this moment electric fuse device equivalent circuit diagram as shown in Figure 5, polysilicon layer 2 ' equivalence this moment is diode D1 and the D2 that two negative poles are connected in series.
Only be opposite two interregionally the having one and undope or doped regions of P type, N type, PN junction, doping type with polysilicon layer in the prior art 2, polysilicon layer 2 ' can equivalence be the diode of two reversal connections among the present invention, and the resistance of polysilicon layer 2 ' can effectively increase.When by after applying appropriate voltage (low can be 1 to 2 volt, and high reaches 7 to 8 volts) come the blow out fuse device on metal plug 40a and 40b, it is bigger than prior art that the equivalent resistance of fuse-wire device is understood this expropriation of land, thereby can effectively increase the device operation window.
Referring to Fig. 6, in conjunction with referring to Fig. 3, Fig. 6 has shown the manufacture method of electric fuse device of the present invention, and as shown in the figure, described method is at first carried out step S10, forms polysilicon layer 2 ' on insulating barrier 10, and polysilicon layer 2 ' can form by chemical vapor deposition method.In first and second embodiment of the present invention, all form polysilicon layer 2 ' by low-pressure chemical vapor deposition (LPCVD) technology.
Then carry out step S11, go up the coating photoresist and make the first draw-out area A1 ' by lithography and the second draw-out area A2 ' at polysilicon layer 2 '.
Then carry out step S12, carry out ion implantation technology and carry out doping of the same type at the first draw-out area A1 ' and the second draw-out area A2 ', doping type can be N type or P type.In first and second embodiment of the present invention, the doping type of the first draw-out area A1 ' and the second draw-out area A2 ' is respectively N type and P type.
Then carry out step S13, remove photoresist and apply photoresist again, and make mesozone B ' by lithography.
Then carry out step S14, carry out ion implantation technology and mix at mesozone B ', its doping type is opposite with the doping type of the first draw-out area A1 ' and the second draw-out area A2 '.In first and second embodiment of the present invention, the doping type of mesozone B ' is respectively P type and N type.
Then carry out step S15, go up at polysilicon layer 2 ' and form silicide layer 3, the detailed step that forms silicide layer 3 comprises metal deposition, heat treatment and unreacted metal removal.Because the industry that forms of silicide is used always and known technology, is not described in detail in this.
Then carry out step S16, metallization medium layer 4 on silicide layer 3, and dielectric layer 4 can be silica, silicon nitride, boron-phosphorosilicate glass (BPSG) etc., wherein, silica can be made by dried oxygen technology, wet oxygen technology or dried wet oxygen hybrid technique, also can use tetraethoxysilane (TEOS) to make.
Then carry out step S17, on dielectric layer 4, make connecting to the contact hole of silicide layer 3.
Then carry out step S18, in contact hole, make metal plug 40a and 40b.
In sum, the present invention carries out the doping of same kind at the first draw-out area A1 ' and the second draw-out area A2 ' of polysilicon layer 2 ' both sides, and carry out dissimilar doping at mesozone B ', thereby go up the diodes that form two reverse connections at polysilicon layer 2 ', so can greatly improve the resistance of polysilicon layer 2 ', thereby increase the resistance after the electric fuse device fusing.
Claims (8)
1, a kind of electric fuse device, be arranged on the insulating barrier of substrate, it comprises polysilicon layer and is formed on silicide layer on the polysilicon layer, described polysilicon layer has first draw-out area, mesozone and second draw-out area of arranging successively, it is characterized in that, described first draw-out area is identical with the doping type of second draw-out area, and is opposite with the doping type of mesozone.
2, electric fuse device as claimed in claim 1, it is characterized in that, also be formed with a dielectric layer on the described silicide layer, corresponding first and second draw-out areas of described dielectric layer are respectively arranged with the contact hole that connects to silicide layer, are formed with the metal plug that is electrically connected to silicide layer in the described contact hole.
3, electric fuse device as claimed in claim 1 is characterized in that, described silicide layer is titanium silicide, cobalt silicide, nickle silicide, tantalum silicide or tungsten silicide.
4, electric fuse device as claimed in claim 1 is characterized in that, mixes for the N type in described first draw-out area and second draw-out area, mixes for the P type in described mesozone.
5, electric fuse device as claimed in claim 1 is characterized in that, mixes for the P type in described first draw-out area and second draw-out area, mixes for the N type in described mesozone.
6, electric fuse device as claimed in claim 1 is characterized in that, the thickness range of described silicide layer is 100 to 1000 dusts.
7, a kind of method that is used to make electric fuse device as claimed in claim 1 is characterized in that, may further comprise the steps: a, form polysilicon layer on an insulating barrier of substrate; B, employing ion implantation technology form first draw-out area, mesozone and second draw-out area successively in polysilicon layer, described first draw-out area is identical with the doping type of second draw-out area, and is opposite with the doping type of mesozone; C, on polysilicon layer, form silicide layer.
8, method as claimed in claim 7 is characterized in that, and is further comprising the steps of: d, deposition one dielectric layer on silicide layer; E, on this dielectric layer, make the contact hole connect to silicide layer; F, in contact hole, make metal plug.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910053709A CN101645434A (en) | 2009-06-24 | 2009-06-24 | Electric fuse device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910053709A CN101645434A (en) | 2009-06-24 | 2009-06-24 | Electric fuse device and manufacturing method thereof |
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| CN101645434A true CN101645434A (en) | 2010-02-10 |
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| CN200910053709A Pending CN101645434A (en) | 2009-06-24 | 2009-06-24 | Electric fuse device and manufacturing method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102623431A (en) * | 2011-01-29 | 2012-08-01 | 中国科学院微电子研究所 | Semiconductor device |
| CN108461476A (en) * | 2017-02-17 | 2018-08-28 | 中芯国际集成电路制造(上海)有限公司 | A kind of electric fuse device and its manufacturing method |
| CN109037190A (en) * | 2018-07-27 | 2018-12-18 | 上海华力集成电路制造有限公司 | A kind of electric fuse structure and its manufacturing method |
| CN109244061A (en) * | 2018-09-03 | 2019-01-18 | 上海华虹宏力半导体制造有限公司 | Electrically programmable fuse structure and forming method thereof |
-
2009
- 2009-06-24 CN CN200910053709A patent/CN101645434A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102623431A (en) * | 2011-01-29 | 2012-08-01 | 中国科学院微电子研究所 | Semiconductor device |
| CN102623431B (en) * | 2011-01-29 | 2015-02-25 | 中国科学院微电子研究所 | Semiconductor device |
| CN108461476A (en) * | 2017-02-17 | 2018-08-28 | 中芯国际集成电路制造(上海)有限公司 | A kind of electric fuse device and its manufacturing method |
| CN108461476B (en) * | 2017-02-17 | 2020-02-11 | 中芯国际集成电路制造(上海)有限公司 | Electric fuse device and manufacturing method thereof |
| CN109037190A (en) * | 2018-07-27 | 2018-12-18 | 上海华力集成电路制造有限公司 | A kind of electric fuse structure and its manufacturing method |
| CN109244061A (en) * | 2018-09-03 | 2019-01-18 | 上海华虹宏力半导体制造有限公司 | Electrically programmable fuse structure and forming method thereof |
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Application publication date: 20100210 |