CN102623431B - Semiconductor device with a plurality of transistors - Google Patents
Semiconductor device with a plurality of transistors Download PDFInfo
- Publication number
- CN102623431B CN102623431B CN201110031550.6A CN201110031550A CN102623431B CN 102623431 B CN102623431 B CN 102623431B CN 201110031550 A CN201110031550 A CN 201110031550A CN 102623431 B CN102623431 B CN 102623431B
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- Prior art keywords
- insulating barrier
- fuse
- electrically programmable
- silicon substrate
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 230000004888 barrier function Effects 0.000 claims abstract description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 229910021332 silicide Inorganic materials 0.000 claims description 18
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
- 229920005591 polysilicon Polymers 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000002955 isolation Methods 0.000 claims description 3
- PCLURTMBFDTLSK-UHFFFAOYSA-N nickel platinum Chemical compound [Ni].[Pt] PCLURTMBFDTLSK-UHFFFAOYSA-N 0.000 claims description 3
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical group [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910021334 nickel silicide Inorganic materials 0.000 claims description 3
- 229910021339 platinum silicide Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 7
- 230000008569 process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
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- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
A semiconductor device, the anode contact of the electrically programmable fuse locates over insulating layer, the cathode contact does not locate over insulating layer, therefore there is no barrier of insulating layer between silicon substrate and the fuse circuit, the fuse circuit produces the electromigration more easily, this makes the electrically programmable fuse have better programmability, meanwhile, the insulating layer can block the heat that spreads to the silicon substrate; in addition, the structure of the invention can be obtained only by adjusting the position of the electrically programmable fuse in the layout, the number of process steps and mask plates is not increased, and the production cost is saved.
Description
Technical field
The present invention relates to a kind of semiconductor device, especially, relate to a kind of electrically programmable fuse.
Background technology
electric fuse is the common components in semiconductor integrated circuit, is mainly used in the reparation of unit component, and it makes semiconductor device be provided with certain ability able to programme and recoverable.Traditional fuse is laser fuse, is irradiated by laser, and fuse is blown, and like this, the electrical connection form of device changes, thus achieves the able to programme of integrated circuit and device.Along with constantly reducing of feature sizes of semiconductor devices, enter the deep-submicron stage, and the treatable line thickness of laser fuse institute is usually in micron dimension, can not meet the demand of reality; Meanwhile, laser fuse can not carry out programming operation to the chip completing encapsulation, which also limits its range of application.Therefore, people have developed electrically programmable fuse (eFuse).
electrically programmable fuse make use of ELECTROMIGRATION PHENOMENON, the ELECTROMIGRATION PHENOMENON especially in metal silicide, realizes the able to programme of device.See accompanying drawing 1, this is the structural representation of electrically programmable fuse common at present, and be insulating barrier 20 on silicon substrate 10, insulating barrier 20 is generally STI; Be polysilicon layer 30 and metal silicide layer 40 successively on insulating barrier 20, polysilicon layer 30 and metal silicide layer 40 are in order to form fuse circuit (fuse link); The superiors are positive contact 50 and cathode contacts 60, and namely fuse circuit is formed among the polysilicon layer 30 corresponding with positive contact 50 and cathode contacts 60 and metal silicide layer 40.Fuse component and silicon substrate 10 are kept apart by insulating barrier 20, are to be passed through many heats to silicon substrate 10 in fuse programming process, thus cause device programming to lose efficacy.Electrically programmable fuse is mainly used in repairing the device cell lost efficacy, and the electrically programmable fuse in device does not need extra processing step and mask, can not increase manufacturing cost.When feature sizes of semiconductor devices is contracted to 45nm and 32nm, people have employed high-K gate dielectric material and metal-gate structures, to ensure device performance.And after Metal gate layer formed, short circuit can be produced when fuse programming, this needs an extra mask to remove the Metal gate layer in fuse-wires structure region.More seriously, the thickness corresponding to the polysilicon gate of metal-gate structures is reduced to below 50nm, and this can produce harmful effect to the reliability of existing fuse-wires structure.
therefore, need to develop a kind of new electrically programmable fuse structure, ensure its programmable features basis on, there is good reliability, and can with high K/ metal-gate structures and technique mutually compatible.
Summary of the invention
the present invention, by the position of each parts in adjustment electrically programmable fuse, makes positive contact be positioned at directly over insulating barrier, and there is not insulating barrier immediately below cathode contacts, obtain good programmable features and reliability.
The invention provides a kind of semiconductor device, comprising:
silicon substrate, and the insulating barrier being arranged in described silicon substrate;
polysilicon layer, is positioned on described silicon substrate;
metal silicide layer, is positioned on described polysilicon layer;
the cathode contacts of electrically programmable fuse and positive contact, be positioned on described metal silicide layer, wherein:
the upper surface of described insulating barrier is equal with the upper surface of described silicon substrate;
described positive contact is positioned at directly over described insulating barrier, and there is not described insulating barrier immediately below described cathode contacts.
in semiconductor device of the present invention, described insulating barrier be shallow trench isolation from.
in semiconductor device of the present invention, the material of described insulating barrier is silica.
in semiconductor device of the present invention, the material of described metal silicide layer is nickel silicide or nickel Platinum Silicide.
in semiconductor device of the present invention, the thickness of described metal silicide layer is 10nm-50nm.
in semiconductor device of the present invention, the thickness of described polysilicon layer is 20nm-80nm.
the invention has the advantages that: the positive contact of electrically programmable fuse is positioned at directly over insulating barrier, cathode contacts is not positioned at directly over insulating barrier, like this, the stop of insulating barrier is there is no between fuse circuit and silicon substrate, fuse circuit more easily produces electromigration, this makes electrically programmable fuse have better programmability, and meanwhile, insulating barrier can stop the heat diffusing to silicon substrate; In addition, by means of only adjustment electrically programmable fuse position in domain, structure of the present invention can be obtained, not increase processing step and mask plate number, save production cost.
Accompanying drawing explanation
the existing electrically programmable fuse structural representation of Fig. 1.
fig. 2 electrically programmable fuse structural representation of the present invention.
Embodiment
feature and the technique effect thereof of technical solution of the present invention is described in detail in conjunction with schematic embodiment referring to accompanying drawing.
the structural representation of electrically programmable fuse provided by the invention is see accompanying drawing 2.Electrically programmable fuse comprises the silicon substrate 1 being positioned at the bottom, and is arranged in the insulating barrier 2 of silicon substrate 1.Wherein, insulating barrier 2 is generally shallow trench isolation from (STI), and its material is generally silica.In order to ensure the electrically programmable performance of electrically programmable fuse, the upper surface of insulating barrier 2 must keep equal with the upper surface of silicon substrate 1, also be, difference in height is there is not between insulating barrier 2 and silicon substrate 1, this can be realized by conventional CMP, like this, the fuse circuit of electrically programmable fuse can keep clear.Electrically programmable fuse also comprises polysilicon layer 3, and it is positioned on silicon substrate 1 and insulating barrier 2; Silicide layer 4, it is positioned on polysilicon layer 3.Polysilicon layer 3 and metal silicide layer 4 are positions that electrically programmable fuse forms fuse circuit, and their material and thickness are to the electrically programmable performance important of electrically programmable fuse.In electrically programmable fuse of the present invention, in order to obtain good electrically programmable performance, the thickness of polysilicon layer 3 is 20nm-80nm, and the material of metal silicide layer 4 is nickel silicide or nickel Platinum Silicide, and thickness is 10nm-50nm.
electrically programmable fuse also comprises positive contact 5 and cathode contacts 6, and they are positioned on metal silicide layer 4.All be positioned at directly over insulating barrier different from positive contact of the prior art and cathode contacts, positive contact 5 in the present invention is positioned at directly over insulating barrier 2, and cathode contacts 6 is not positioned at directly over insulating barrier 2, be also there is not insulating barrier 2 immediately below cathode contacts 6.Therefore, with cathode contacts 6 is corresponding and fuse circuit that is that produce will directly contact with silicon substrate 1, between them, there is no the stop of insulating barrier 2.During programming operation is performed to electrically programmable fuse, be positioned at the partial silicon substrate 1 immediately below cathode contacts 6 and fuse circuit, abundant silicon atom can be provided to fuse circuit, this contributes to metal silicide layer 4 and produces electromigration, make the region of positive contact 5 correspondence be easy to produce larger silicide conducting area, also namely the silicon substrate 1 of this part can improve the electrically programmable performance of electrically programmable fuse.Be positioned at the insulating barrier 2 immediately below positive contact 5, there is good thermal insulation properties, can prevent the amount of heat produced in programming operation from spreading to silicon substrate 1 and causing programming to lose efficacy, improve the reliability of electrically programmable fuse; Simultaneously, insulating barrier 2 is there is not immediately below cathode contacts 6 because positive contact 5 is positioned at directly over insulating barrier 2, this makes the electromigration produced in programming process occur in region corresponding to cathode contacts 6 more, and this also contributes to the electrically programmable performance improving electrically programmable fuse.
the manufacturing process of the electrically programmable fuse in the present invention is mutually compatible with traditional electrically programmable fuse manufacturing process, only by each parts position in domain of adjustment electrically programmable fuse, structure of the present invention can be obtained, processing step and mask plate number can't be increased, while the good device architecture of acquisition, avoid the generation of extra production cost.In addition, in order to mutually compatible with high K/ metal gate process, an extra mask is needed to remove the Metal gate layer in fuse-wires structure region, this is due to after Metal gate layer formed, short circuit can be caused when fuse programming, therefore need the Metal gate layer removing this part, thus avoid short circuit.
although the present invention is described with reference to above-mentioned exemplary embodiment, those skilled in the art can know without the need to departing from the scope of the invention and make various suitable change and equivalents to technical solution of the present invention.In addition, can be made by disclosed instruction and manyly may be suitable for the amendment of particular condition or material and not depart from the scope of the invention.Therefore, object of the present invention does not lie in and is limited to as realizing preferred forms of the present invention and disclosed specific embodiment, and disclosed device architecture and manufacture method thereof will comprise all embodiments fallen in the scope of the invention.
Claims (5)
1. a semiconductor device, comprising:
Silicon substrate, and the insulating barrier being arranged in described silicon substrate;
Polysilicon layer, is positioned on described silicon substrate;
Metal silicide layer, is positioned on described polysilicon layer;
The cathode contacts of electrically programmable fuse and positive contact, be positioned on described metal silicide layer, it is characterized in that:
The upper surface of described insulating barrier is equal with the upper surface of described silicon substrate;
Described positive contact is positioned at directly over described insulating barrier, and there is not described insulating barrier immediately below described cathode contacts, described insulating barrier be shallow trench isolation from.
2. semiconductor device as claimed in claim 1, it is characterized in that, the material of described insulating barrier is silica.
3. semiconductor device as claimed in claim 1, it is characterized in that, the material of described metal silicide layer is nickel silicide or nickel Platinum Silicide.
4. semiconductor device as claimed in claim 1, it is characterized in that, the thickness of described metal silicide layer is 10nm-50nm.
5. semiconductor device as claimed in claim 1, it is characterized in that, the thickness of described polysilicon layer is 20nm-80nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110031550.6A CN102623431B (en) | 2011-01-29 | 2011-01-29 | Semiconductor device with a plurality of transistors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110031550.6A CN102623431B (en) | 2011-01-29 | 2011-01-29 | Semiconductor device with a plurality of transistors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102623431A CN102623431A (en) | 2012-08-01 |
| CN102623431B true CN102623431B (en) | 2015-02-25 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110031550.6A Active CN102623431B (en) | 2011-01-29 | 2011-01-29 | Semiconductor device with a plurality of transistors |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1815729A (en) * | 2005-02-02 | 2006-08-09 | 联华电子股份有限公司 | Electric fuse structure |
| CN1925151A (en) * | 2005-08-19 | 2007-03-07 | 国际商业机器公司 | Semiconductor structure and its manufacturing method |
| CN101645434A (en) * | 2009-06-24 | 2010-02-10 | 上海宏力半导体制造有限公司 | Electric fuse device and manufacturing method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6624499B2 (en) * | 2002-02-28 | 2003-09-23 | Infineon Technologies Ag | System for programming fuse structure by electromigration of silicide enhanced by creating temperature gradient |
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2011
- 2011-01-29 CN CN201110031550.6A patent/CN102623431B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1815729A (en) * | 2005-02-02 | 2006-08-09 | 联华电子股份有限公司 | Electric fuse structure |
| CN1925151A (en) * | 2005-08-19 | 2007-03-07 | 国际商业机器公司 | Semiconductor structure and its manufacturing method |
| CN101645434A (en) * | 2009-06-24 | 2010-02-10 | 上海宏力半导体制造有限公司 | Electric fuse device and manufacturing method thereof |
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| Publication number | Publication date |
|---|---|
| CN102623431A (en) | 2012-08-01 |
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