CN102623431A - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
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- CN102623431A CN102623431A CN2011100315506A CN201110031550A CN102623431A CN 102623431 A CN102623431 A CN 102623431A CN 2011100315506 A CN2011100315506 A CN 2011100315506A CN 201110031550 A CN201110031550 A CN 201110031550A CN 102623431 A CN102623431 A CN 102623431A
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- fuse
- semiconductor device
- insulating barrier
- electrically programmable
- silicon substrate
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Abstract
The invention relates to a semiconductor device. The anode contact of an electrically programmable fuse is locatedright above an insulating layer, while the cathode contact is not located right above the insulating layer, thus there is no insulating layer barrier between a fuse line and a silicon substrate. The fuse line is more likely to generate electromigration, which provides the electrically programmable fuse with a better programmable ability. Meanwhile, the insulating layer can block the heat diffusing to the silicon substrate. In addition,by simply adjusting the location of the electrically programmable fuse in the layout, the structure of the invention can be obtained and the process steps and the mask plate number do not increase, thereby the production cost can be saved.
Description
Technical field
The present invention relates to a kind of semiconductor device, especially, relate to a kind of electrically programmable fuse.
Background technology
electric fuse is the common components in the semiconductor integrated circuit, is mainly used in the reparation of unit component, and it makes semiconductor device have certain ability able to programme and recoverable.Traditional fuse is a laser fuse, and through laser radiation, fuse is blown, and like this, the electrical connection form of device changes, thereby has realized the able to programme of integrated circuit and device.Along with constantly dwindling of feature sizes of semiconductor devices, got into the deep-submicron stage, and the treatable line thickness of laser fuse institute can not satisfy the demand of reality usually in micron dimension; Simultaneously, laser fuse can not carry out programming operation to the chip of accomplishing encapsulation, and this has also limited its range of application.Therefore, people have developed electrically programmable fuse (eFuse)
electrically programmable fuse has utilized ELECTROMIGRATION PHENOMENON, and especially the ELECTROMIGRATION PHENOMENON in the metal silicide realizes the able to programme of device.Referring to accompanying drawing 1, this is the structural representation of at present common electrically programmable fuse, is insulating barrier 20 on the silicon substrate 10, and insulating barrier 20 is generally STI; Be polysilicon layer 30 and metal silicide layer 40 successively on insulating barrier 20, polysilicon layer 30 and metal silicide layer 40 are in order to form fuse circuit (fuse link); The superiors are that anode contact 50 contacts 60 with negative electrode, and the fuse circuit promptly is formed at and contacts 50 with anode and contact among 60 corresponding polysilicon layers 30 and the metal silicide layer 40 with negative electrode.Insulating barrier 20 is kept apart fuse component and silicon substrate 10, is in the fuse programming process, to transmit too much heat to silicon substrate 10, thereby causes device programming to lose efficacy.Electrically programmable fuse is mainly used in repairs the device cell that lost efficacy, and the electrically programmable fuse in the device does not need extra processing step and mask, can not increase manufacturing cost.When feature sizes of semiconductor devices was contracted to 45nm and 32nm, people had adopted high-K gate dielectric material and metal-gate structures, to guarantee device performance.And after the formation of metal gate layer, can when fuse programming, produce short circuit, this needs an additional mask version remove the metal gate layer in fuse-wires structure zone.Even more serious problem is, is reduced to below the 50nm corresponding to the thickness of the polysilicon gate of metal-gate structures, and this reliability to existing fuse-wires structure can produce harmful effect.
A kind of new electrically programmable fuse structure therefore need be developed in
, on the basis that guarantees its programmable features, has good reliability, and can be compatible mutually with high K/ metal-gate structures and technology.
Summary of the invention
the present invention is through each position component in the adjustment electrically programmable fuse, make anode contact be positioned at insulating barrier directly over, and the negative electrode contact under do not have insulating barrier, obtained good programmable features and reliability.
The present invention provides a kind of semiconductor device, comprising:
Silicon substrate, and the insulating barrier that is arranged in said silicon substrate;
Polysilicon layer is positioned on the said silicon substrate;
Metal silicide layer is positioned on the said polysilicon layer;
The negative electrode contact of electrically programmable fuse contacts with anode, is positioned on the said metal silicide layer, wherein:
The upper surface of said insulating barrier is equal with the upper surface of said silicon substrate;
The contact of
said anode be positioned at said insulating barrier directly over, and the contact of said negative electrode under do not have said insulating barrier.
In semiconductor device of the present invention, said insulating barrier is that shallow trench isolation leaves
.
in semiconductor device of the present invention, the material of said insulating barrier is a silica.
in semiconductor device of the present invention, the material of said metal silicide layer is nickel silicide or nickel Platinum Silicide.
in semiconductor device of the present invention, the thickness of said metal silicide layer is 10nm-50nm.
in semiconductor device of the present invention, the thickness of said polysilicon layer is 20nm-80nm.
the invention has the advantages that: the anode contact of electrically programmable fuse is positioned at directly over the insulating barrier; Negative electrode contact is not positioned at directly over the insulating barrier, like this since, do not have stopping of insulating barrier between fuse circuit and the silicon substrate; The fuse circuit more is easy to generate electromigration; This makes electrically programmable fuse have better programmability, and simultaneously, insulating barrier can stop the heat that diffuses to silicon substrate; In addition, only, can obtain structure of the present invention, not increase processing step and mask plate number, save production cost through adjustment electrically programmable fuse position in domain.
Description of drawings
The existing electrically programmable fuse structural representation of
Fig. 1.
Fig. 2 electrically programmable fuse structural representation of the present invention.
Embodiment
Below
with reference to accompanying drawing and combine schematic embodiment to specify the characteristic and the technique effect thereof of technical scheme of the present invention.
The structural representation of
electrically programmable fuse provided by the invention is referring to accompanying drawing 2.Electrically programmable fuse comprises the silicon substrate 1 that is positioned at the bottom, and the insulating barrier 2 that is arranged in silicon substrate 1.Wherein, insulating barrier 2 is generally shallow trench isolation from (STI), and its material is generally silica.In order to guarantee the electrically programmable performance of electrically programmable fuse; The upper surface of insulating barrier 2 must keep equal with the upper surface of silicon substrate 1; Also promptly, do not have difference in height between insulating barrier 2 and the silicon substrate 1, this can realize through conventional CMP technology; Like this, the fuse circuit of electrically programmable fuse can keep clear.Electrically programmable fuse also comprises polysilicon layer 3, and it is positioned on silicon substrate 1 and the insulating barrier 2; Silicide layer 4, it is positioned on the polysilicon layer 3.Polysilicon layer 3 is positions that electrically programmable fuse forms the fuse circuit with metal silicide layer 4, and their material and thickness have material impact to the electrically programmable performance of electrically programmable fuse.In electrically programmable fuse of the present invention, in order to obtain good electrically programmable performance, the thickness of polysilicon layer 3 is 20nm-80nm, and the material of metal silicide layer 4 is nickel silicide or nickel Platinum Silicide, and thickness is 10nm-50nm.
electrically programmable fuse comprises that also anode contact 5 contacts 6 with negative electrode, and they are positioned on the metal silicide layer 4.With anode of the prior art contact contact with negative electrode all be positioned at insulating barrier directly over different; Anode among the present invention contact 5 be positioned at insulating barrier 2 directly over; And negative electrode contact 6 be not positioned at insulating barrier 2 directly over, also be negative electrode contact 6 under do not have insulating barrier 2.Therefore, contact 6 correspondingly and fuse circuit that produce will directly contact with silicon substrate 1, do not have stopping of insulating barrier 2 between them with negative electrode.During electrically programmable fuse is carried out programming operation; Be positioned at the partial silicon substrate 1 under negative electrode contact 6 and the fuse circuit; Can abundant silicon atom be provided to the fuse circuit; This helps metal silicide layer 4 to produce electromigration, makes anode contact 5 corresponding zones be easy to produce bigger silicide conducting area, also is the electrically programmable performance that this part silicon substrate 1 can improve electrically programmable fuse.Be positioned at the insulating barrier 2 under the anode contact 5, have good thermal insulation properties, a large amount of heats that can prevent to produce in the programming operation are to silicon substrate 1 diffusion and cause that programming lost efficacy, and improved the reliability of electrically programmable fuse; Simultaneously; Because anode contact 5 is positioned at directly over the insulating barrier 2 negative electrode contact 6 under do not have insulating barrier 2; This makes the electromigration that produces in the programming process occur in negative electrode more and contacts 6 The corresponding area that this also helps to improve the electrically programmable performance of electrically programmable fuse.
The manufacturing process of the electrically programmable fuse among
the present invention is compatible mutually with traditional electrically programmable fuse manufacturing process; Only through adjusting each parts position in domain of electrically programmable fuse; Can obtain structure of the present invention; Can't increase processing step and mask plate number, when obtaining good device architecture, avoid the generation of extra production cost.In addition, for compatible mutually, need an additional mask version to remove the metal gate layer in fuse-wires structure zone with high K/ metal gate process; This is because after the formation of metal gate layer; Can when fuse programming, cause short circuit, therefore need remove this a part of metal gate layer, thereby avoid short circuit.
although with reference to above-mentioned exemplary embodiment explanation the present invention, and those skilled in the art can know and need not to break away from the scope of the invention and technical scheme of the present invention is made various suitable changes and equivalents.In addition, can make by disclosed instruction and manyly possibly be suitable for the modification of particular condition or material and do not break away from the scope of the invention.Therefore, the object of the invention does not lie in and is limited to as being used to realize preferred forms of the present invention and disclosed specific embodiment, and disclosed device architecture and manufacturing approach thereof will comprise all embodiment that fall in the scope of the invention.
Claims (6)
1. semiconductor device comprises:
Silicon substrate, and the insulating barrier that is arranged in said silicon substrate;
Polysilicon layer is positioned on the said silicon substrate;
Metal silicide layer is positioned on the said polysilicon layer;
The negative electrode contact of electrically programmable fuse contacts with anode, is positioned on the said metal silicide layer, it is characterized in that:
The upper surface of said insulating barrier is equal with the upper surface of said silicon substrate;
The contact of
said anode be positioned at said insulating barrier directly over, and the contact of said negative electrode under do not have said insulating barrier.
2.
semiconductor device according to claim 1 is characterized in that said insulating barrier is that shallow trench isolation leaves.
3.
semiconductor device according to claim 1 is characterized in that in semiconductor device of the present invention, the material of said insulating barrier is a silica.
4.
semiconductor device according to claim 1 is characterized in that in semiconductor device of the present invention, the material of said metal silicide layer is nickel silicide or nickel Platinum Silicide.
5. semiconductor device according to claim 1 is characterized in that in semiconductor device of the present invention, the thickness of said metal silicide layer is 10nm-50nm.
6. semiconductor device according to claim 1 is characterized in that in semiconductor device of the present invention, the thickness of said polysilicon layer is 20nm-80nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110031550.6A CN102623431B (en) | 2011-01-29 | 2011-01-29 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110031550.6A CN102623431B (en) | 2011-01-29 | 2011-01-29 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102623431A true CN102623431A (en) | 2012-08-01 |
| CN102623431B CN102623431B (en) | 2015-02-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110031550.6A Active CN102623431B (en) | 2011-01-29 | 2011-01-29 | Semiconductor device |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030160297A1 (en) * | 2002-02-28 | 2003-08-28 | Chandrasekharan Kothandaraman | System for programming fuse structure by electromigration of silicide enhanced by creating temperature gradient |
| CN1815729A (en) * | 2005-02-02 | 2006-08-09 | 联华电子股份有限公司 | Electric fuse structure |
| CN1925151A (en) * | 2005-08-19 | 2007-03-07 | 国际商业机器公司 | Semiconductor structure and its manufacturing method |
| CN101645434A (en) * | 2009-06-24 | 2010-02-10 | 上海宏力半导体制造有限公司 | Electric fuse device and manufacturing method thereof |
-
2011
- 2011-01-29 CN CN201110031550.6A patent/CN102623431B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030160297A1 (en) * | 2002-02-28 | 2003-08-28 | Chandrasekharan Kothandaraman | System for programming fuse structure by electromigration of silicide enhanced by creating temperature gradient |
| CN1815729A (en) * | 2005-02-02 | 2006-08-09 | 联华电子股份有限公司 | Electric fuse structure |
| CN1925151A (en) * | 2005-08-19 | 2007-03-07 | 国际商业机器公司 | Semiconductor structure and its manufacturing method |
| CN101645434A (en) * | 2009-06-24 | 2010-02-10 | 上海宏力半导体制造有限公司 | Electric fuse device and manufacturing method thereof |
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| Publication number | Publication date |
|---|---|
| CN102623431B (en) | 2015-02-25 |
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