CN101641797B - 包括由高k电介质组成的背面反射层的太阳能电池 - Google Patents
包括由高k电介质组成的背面反射层的太阳能电池 Download PDFInfo
- Publication number
- CN101641797B CN101641797B CN2008800093282A CN200880009328A CN101641797B CN 101641797 B CN101641797 B CN 101641797B CN 2008800093282 A CN2008800093282 A CN 2008800093282A CN 200880009328 A CN200880009328 A CN 200880009328A CN 101641797 B CN101641797 B CN 101641797B
- Authority
- CN
- China
- Prior art keywords
- solar cell
- silicon layer
- conductive silicon
- layer
- cell according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003989 dielectric material Substances 0.000 title abstract description 3
- 238000002161 passivation Methods 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 55
- 229910052710 silicon Inorganic materials 0.000 claims description 55
- 239000010703 silicon Substances 0.000 claims description 55
- 238000000576 coating method Methods 0.000 claims description 17
- 238000005516 engineering process Methods 0.000 claims description 17
- 239000011248 coating agent Substances 0.000 claims description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims description 13
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 9
- 229910006249 ZrSi Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 238000009279 wet oxidation reaction Methods 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- 239000000969 carrier Substances 0.000 abstract 1
- 238000000651 laser trapping Methods 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 238000007669 thermal treatment Methods 0.000 abstract 1
- 241001424688 Enceliopsis Species 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 239000002800 charge carrier Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000006071 cream Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明涉及一种太阳能电池，其包括含有高K电介质的背面反射层。该背面反射层包括含有HfO2或ZrO2的反射膜以及含有HfSixOy、ZrSixOy或SiO2的背面钝化层。反射膜与背面钝化层形成在其上输入太阳光线的基板的后侧。因此，太阳能电池表现出极好的太阳光线的光学捕获以及较低的后侧载流子重新结合率。同时，由于反射膜与背面钝化层具有极好的热稳定性，因此有可能通过应用如热处理等的各种工艺来形成电极。
Description
技术领域
本发明涉及太阳能电池，更具体地说，涉及能够在确保极好地光学捕获太阳光线的情况下降低载流子背面的重新结合的太阳能电池。
背景技术
近来，据估计如石油和煤这样的现有能源将会枯竭，因此替代这些能源的其他能源越来越受到关注。由于太阳能电池的能量充足而且不会造成任何环境污染，所以在替代能源中太阳能电池是尤其受关注的。太阳能电池分为利用太阳热产生使涡轮旋转所需的蒸汽的太阳能热电池，以及利用半导体的特性将光子转化成电能的太阳能光电池。通常，太阳能电池认为是太阳能光电池(下文中使用“太阳能电池”这个术语)。
参照图1，其示出了太阳能电池的基本结构。与二极管类似，该太阳能电池具有p型半导体101和n型半导体102的结型结构。如果光子输入到太阳能电池中，则这些光子就会与半导体的材料发生反应以生成负电荷的电子以及由于电子移除而产生的正电荷的空穴，从而随着电子和空穴的移动而产生电流，这称为光电效应。在组成太阳能电池的p型半导体101和n型半导体102中，电子被拉向n型半导体102而空穴被拉向p型半导体101，所以电子和空穴分别向与n型半导体102结合的电极103以及与p型半导体101结合的电极104移动。如果利用导线连接电极103、104，那么就有可能随着电流流动而获得电力。
除了太阳能电池的上述基本结构，防反射层和反射层分别设置在太阳能电池的前侧与后侧以提高太阳能电池的效率。防反射层防止输入在前侧的太阳光线的反射，而反射层反射经过太阳能电池后侧的太阳光线，从而提高光学捕获。
反射层应具有对于太阳光线的高反射率并降低反射层与半导体层之间界面上的载流子的重新结合。但是，传统的反射层都不具有极好的反射率而且也无法完全防止载流子的重新结合。此外，由于其热稳定性比较差，导致传统的反射层在提高用于形成背电极的热处理工艺的温度方面受到限制。
发明内容
技术问题
本发明被设计为解决现有技术的问题，因此本发明的目的是提供一种能够在确保对太阳光线的极好光学捕获的情况下降低载流子背面的重新结合的太阳能电池。
技术方案
为实现上述目的，本发明提供了一种太阳能电池，其包括p-n结结构，该p-n结结构具有第一导电硅层、位于第一导电硅层上且具有与第一导电硅层相反的传导性的第二导电硅层，以及形成在第一导电硅层和第二导电硅层之间的界面处的p-n结；形成在第二导电硅层上的防反射层；位于第一导电硅层上的背面反射层，并且该背面反射层具有含有HfSixOy、ZrSixOy或SiO2的背面钝化层以及含有HfO2或ZrO2的反射膜；经过防反射层连接到第二导电硅层的前电极；以及经过反射膜和背面钝化层连接到第一导电硅层的背电极。
通过将HfO2-x或ZrO2沉积到第一导电硅层上然后对沉积后的材料进行后热氧气退火工艺来形成背面反射层。同样，通过CVD(化学气相沉积)或PECVD(等离子体增强化学气相沉积)的方法将HfO2-x或ZrO2-x沉积在第一导电硅层上。优选的是，通过湿式氧化法或快速热氧化法进行后热氧气退火工艺。
附图说明
参照附图根据下面对实施方式的说明，本发明的其他目的和方法会变得显而易见，其中：
图1是示出了太阳能电池基本结构的示意图；
图2是示出了根据本发明第一实施方式的太阳能电池的示意图；以及
图3是示出了根据本发明第二实施方式的太阳能电池的示意图。
具体实施方式
下文中将参照附图详细描述本发明的优选实施方式。
图2是示出了根据本发明第一实施方式的太阳能电池的示意图。如图2所示，根据本发明的太阳能电池包括p-n结结构、防反射层205、前电极203、背电极204、反射膜207以及背面钝化层208。
p-n结结构包括：第一导电硅层201，具有与第一导电硅层201相反的传导性的第二导电硅层202，以及形成在第一导电硅层201和第二导电硅层202之间的界面处的p-n结。该p-n结结构接收光以通过光电效应产生电流。通过将具有相反的传导性的第二导电硅层202形成在第一导电硅层上，然后将p-n结形成在第一导电硅层201和第二导电硅层202之间的界面处来制作p-n结结构。典型地，第一导电硅层是掺有如硼、镓、铟的3族元素的p型硅层，而第二导电硅层是掺有如磷、砷、锑的5族元素的n型发射极层。通过结合p型硅层与n型发射极层来形成p-n结。
设置背面反射层207、208以提高太阳光线的光学捕获，且该背面反射层由反射膜207和背面钝化层208组成。反射膜207用于反射太阳光线使得太阳光线不会穿过太阳能电池而被释放，且反射膜207含有HfO2或ZrO2。背面钝化层208用于防止后侧载流子(电子或空穴)的重新结合，且背面钝化层208含有HfSixOy、ZrSixOy或SiO2。
HfO2和ZrO2分别具有1.9或更小以及2.2或更小的折射率，其比硅的折射率(3.8)低的多。因此，利用HfO2或ZrO2形成的反射膜207使太阳能电池表现出极好反射率，并且HfSixOy、ZrSixOy以及SiO2表现出极好的钝化特征。此外，反射膜207和背面钝化层208具有极好的热稳定性，因此即使在如热处理(通常，在800摄氏度进行)等的需要高温的电极形成工艺中，该反射膜和背面钝化层都不会分解。更具体地说，HfO2/SiO2、ZrO2/SiO2以及ZrO2/ZrSixOy分别在900-1000摄氏度、900摄氏度或更高、以及880摄氏度或更高的温度分解。因此，通过设置反射膜207以及背面钝化层208可以拓宽电极形成工艺的选择范围，而不会受到如高温的工艺限制。具体地说，如果通过印刷或热处理方式制成背电极204，则可以以较低工艺成本的简单方式替代利用激光的背面电极形成方法而制成背电极204。因此，通过设置背面反射层207、208，可以带来如简化工艺及降低制作成本的附加效果。
通过将HfO2-x或ZrO2-x沉积在第一导电硅层上然后对其进行后热氧气退火工艺来制成背面反射层207、208。这里，HfO2-x或ZrO2-x可通过CVD(化学气相沉积)或PECVD(等离子体增强化学气相沉积)的方法沉积到第一导电硅层上。后热氧气退火工艺在氧气环境中进行。通过进行后热氧气退火工艺，在第一导电硅层201和HfO2-x或ZrO2-x之间的界面处形成含有HfSixOy、ZrSixOy或SiO2的背面钝化层208，并且HfO2-x或ZrO2-x转化成HfO2或ZrO2以形成反射膜207。可通过湿式氧化法或快速热氧化法进行后热氧气退火工艺。在使用湿式氧化法的情况下，如图3所示，SiO2层206形成在第二导电硅层202上，从而可用作前侧钝化层。在使用快速热氧化法的情况下，不形成SiO2层。
防反射层205形成在第二导电硅层上以最小化太阳光线的反射率，以使得输入太阳能电池的太阳光线的光学捕获得以提高。防反射层205可由任意用于形成传统防反射层的公知材料制成，非限制性地，公知材料中氮化硅是其中最典型的一种材料。同样，可通过CVD(化学气相沉积)、PECVD(等离子体增强化学气相沉积)或溅射的方法制成防反射层。
如图3所示，前侧钝化层206可进一步形成在防反射层205和第二导电硅层206之间以防止载流子的重新结合。典型地，使用SiO2作为前侧钝化层206。如上所述，在通过湿式氧化法形成背面反射层207、208的情况下，将SiO2层206作为前侧钝化层形成在第二导电硅层202上，且防反射层205形成在SiO2层206上。
前电极203经过防反射层205连接到第二导电硅层202，且背电极204经过反射膜207和背面钝化层208连接到第一导电硅层201。如果施加对这些电极203、204负载，就能够利用太阳能电池中产生的电力。由于银电极具有极好的传导性，所以典型地使用银电极作为前电极203。同样，铝电极由于具有极好的传导性并且与硅之间的极好亲和力而实现良好接合，所以通常使用铝电极作为背电极204。此外，铝电极对应于3族元素，其在与硅基板接触表面处形成p+层(即BSF(Back Surface Field：背面电场))，使得载流子不会消失反而聚集，从而提高太阳能电池的效率。
典型的是，通过根据预定式样将含有银和玻璃粉的电极形成膏涂在防反射层上，然后对电极形成膏进行热处理来形成前电极203。通过热处理，前电极203穿透防反射层205并且连接到第二导电硅层202。按以下方式来形成背电极：确保通过光刻法或激光使得背电极与第一导电硅层201连接的空间，然后在该空间内形成背电极。这里，可以按不同的方式形成背电极，而由于背面反射层具有极好的热稳定性，所以可通过利用使用高温热处理的电极形成方法来形成如上所述的背面反射层207、208。也就是说，可以通过涂布含有铝的电极形成膏然后对电极形成膏进行热处理来形成背电极。可以按逆序来形成前电极203和背电极204，并且可同时对前电极和背电极进行热处理。
应理解的是，说明书和所附权利要求书中使用的术语不应解释为限于通常含义或字典上的含义，而应在让发明者为便于说明而适当定义术语的原则的基础上对基于与本发明技术方案相对应的含义和概念进行解释。
工业应用性
根据本发明的太阳能电池包括含有HfO2或ZrO2的反射膜以及含有HfSixOy、ZrSixOy或SiO2的背面钝化层，因此，太阳能电池显示出极好的光学捕获以及较低的后侧载流子重新结合率。此外，由于反射膜和背面钝化层具有极好的热稳定性，因此有可能通过应用如热处理等的各种工艺形成电极。
Claims (11)
1.一种太阳能电池，该太阳能电池包括：
p-n结结构，该p-n结结构具有第一导电硅层、位于该第一导电硅层上且具有与该第一导电硅层相反的传导性的第二导电硅层，以及形成在所述第一导电硅层和所述第二导电硅层之间的界面处的p-n结；
形成在所述第二导电硅层上的防反射层；
位于所述第一导电硅层上的背面反射层，并且该背面反射层具有含有HfSixOy、ZrSixOy或SiO2的背面钝化层以及含有HfO2或ZrO2的反射膜；
经过所述防反射层连接到所述第二导电硅层的前电极；以及
经过所述反射膜和背面钝化层连接到所述第一导电硅层的背电极。
2.根据权利要求1所述的太阳能电池，其中，通过将HfO2-x或ZrO2-x沉积在所述第一导电硅层上然后对沉积后的材料进行后热氧气退火工艺来形成所述背面反射层。
3.根据权利要求2所述的太阳能电池，其中，通过化学气相沉积CVD或等离子体增强化学气相沉积PECVD的方法将HfO2-x或ZrO2-x沉积在所述第一导电硅层上。
4.根据权利要求2所述的太阳能电池，其中，通过湿式氧化法来执行所述后热氧气退火工艺。
5.根据权利要求2所述的太阳能电池，其中，通过快速热氧化法来执行所述后热氧气退火工艺。
6.根据权利要求1所述的太阳能电池，其中，所述第一导电硅层是p型硅层，而所述第二导电硅层是n型发射极层。
7.根据权利要求1所述的太阳能电池，其中，所述防反射层包括氮化硅。
8.根据权利要求7所述的太阳能电池，其中，通过PECVD、CVD或溅射形成所述防反射层。
9.根据权利要求1所述的太阳能电池，其中，所述太阳能电池还包括位于所述防反射层与所述第二导电硅层之间的前侧钝化层。
10.根据权利要求1所述的太阳能电池，其中，所述前电极包括银。
11.根据权利要求1所述的太阳能电池，其中，所述背电极包括铝。
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070028845 | 2007-03-23 | ||
| KR1020070028845A KR100974226B1 (ko) | 2007-03-23 | 2007-03-23 | 유전체를 이용한 태양전지의 후면 반사막 및 패시베이션층형성 |
| KR10-2007-0028845 | 2007-03-23 | ||
| PCT/KR2008/001511 WO2008117951A1 (en) | 2007-03-23 | 2008-03-18 | Solar cell including backside reflection layer composed of high-k dielectrics |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101641797A CN101641797A (zh) | 2010-02-03 |
| CN101641797B true CN101641797B (zh) | 2011-02-16 |
Family
ID=39788662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008800093282A Expired - Fee Related CN101641797B (zh) | 2007-03-23 | 2008-03-18 | 包括由高k电介质组成的背面反射层的太阳能电池 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8658884B2 (zh) |
| EP (1) | EP2130230B1 (zh) |
| KR (1) | KR100974226B1 (zh) |
| CN (1) | CN101641797B (zh) |
| WO (1) | WO2008117951A1 (zh) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2010092693A1 (ja) * | 2009-02-16 | 2012-08-16 | 三菱電機株式会社 | 太陽電池モジュール |
| EP4350782A3 (en) * | 2009-04-21 | 2024-07-10 | Tetrasun, Inc. | High-efficiency solar cell structures and methods of manufacture |
| EP3770974A1 (en) * | 2009-09-18 | 2021-01-27 | Shin-Etsu Chemical Co., Ltd. | Solar cell, method for manufacturing solar cell, and solar cell module |
| US8603900B2 (en) * | 2009-10-27 | 2013-12-10 | Varian Semiconductor Equipment Associates, Inc. | Reducing surface recombination and enhancing light trapping in solar cells |
| KR101115195B1 (ko) * | 2009-10-30 | 2012-02-22 | 고려대학교 산학협력단 | 실리콘 이종접합 태양전지 및 이를 제조하는 방법 |
| TW201121066A (en) * | 2009-12-14 | 2011-06-16 | Ind Tech Res Inst | Bificial solar cell |
| TWI435454B (zh) | 2010-10-25 | 2014-04-21 | Au Optronics Corp | 太陽能電池 |
| CN102097514B (zh) * | 2010-11-04 | 2013-01-30 | 友达光电股份有限公司 | 太阳能电池 |
| KR101292061B1 (ko) * | 2010-12-21 | 2013-08-01 | 엘지전자 주식회사 | 박막 태양전지 |
| TWI447929B (zh) * | 2011-06-08 | 2014-08-01 | Neo Solar Power Corp | 太陽能電池及其製造方法 |
| CN102832263B (zh) * | 2011-06-15 | 2015-01-14 | 茂迪股份有限公司 | 具有背电场结构的太阳能电池及其制造方法 |
| KR20120140026A (ko) * | 2011-06-20 | 2012-12-28 | 엘지전자 주식회사 | 태양전지 |
| CN102842638B (zh) * | 2011-06-21 | 2015-04-15 | 新日光能源科技股份有限公司 | 太阳能电池及其制造方法 |
| US20130048070A1 (en) * | 2011-08-26 | 2013-02-28 | Arash Hazeghi | Tunnel photovoltaic |
| US9406824B2 (en) | 2011-11-23 | 2016-08-02 | Quswami, Inc. | Nanopillar tunneling photovoltaic cell |
| CN103178124A (zh) * | 2011-12-24 | 2013-06-26 | 西安福安创意咨询有限责任公司 | 一种高效太阳能电池方法 |
| KR101430054B1 (ko) * | 2012-09-20 | 2014-08-18 | 한국기술교육대학교 산학협력단 | 결정질 실리콘 태양전지의 제조 방법 |
| EP2787541B1 (en) * | 2013-04-03 | 2022-08-31 | LG Electronics, Inc. | Solar cell |
| US9466755B2 (en) | 2014-10-30 | 2016-10-11 | International Business Machines Corporation | MIS-IL silicon solar cell with passivation layer to induce surface inversion |
| CN105655439A (zh) * | 2014-11-28 | 2016-06-08 | 润峰电力有限公司 | 一种高背反射晶硅太阳电池的制作工艺 |
| CN106601588A (zh) * | 2016-12-06 | 2017-04-26 | 湖南红太阳光电科技有限公司 | 一种氧化硅钝化层的制备方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4865999A (en) * | 1987-07-08 | 1989-09-12 | Glasstech Solar, Inc. | Solar cell fabrication method |
| US5720827A (en) * | 1996-07-19 | 1998-02-24 | University Of Florida | Design for the fabrication of high efficiency solar cells |
| US6692985B2 (en) * | 2001-06-07 | 2004-02-17 | Industrial Technology Research Institute | Solar cell substrate with thin film polysilicon |
| US6846984B2 (en) * | 2000-04-27 | 2005-01-25 | Universitat Konstanz | Solar cell and method for making a solar cell |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3988167A (en) | 1975-03-07 | 1976-10-26 | Rca Corporation | Solar cell device having improved efficiency |
| US4347263A (en) | 1980-05-30 | 1982-08-31 | Solarex Corporation | Method of applying an antireflective and/or dielectric coating |
| DE3815512C2 (de) * | 1988-05-06 | 1994-07-28 | Deutsche Aerospace | Solarzelle und Verfahren zu ihrer Herstellung |
| JP2706113B2 (ja) * | 1988-11-25 | 1998-01-28 | 工業技術院長 | 光電変換素子 |
| JPH08330611A (ja) * | 1995-03-30 | 1996-12-13 | Sharp Corp | シリコン太陽電池セルとその製造方法 |
| US5907766A (en) * | 1996-10-21 | 1999-05-25 | Electric Power Research Institute, Inc. | Method of making a solar cell having improved anti-reflection passivation layer |
| GB9807692D0 (en) * | 1998-04-14 | 1998-06-10 | Univ Strathclyde | Optival devices |
| JP2004193350A (ja) * | 2002-12-11 | 2004-07-08 | Sharp Corp | 太陽電池セルおよびその製造方法 |
| US7659475B2 (en) * | 2003-06-20 | 2010-02-09 | Imec | Method for backside surface passivation of solar cells and solar cells with such passivation |
| KR20050087248A (ko) * | 2004-02-26 | 2005-08-31 | 삼성에스디아이 주식회사 | 이층 반사방지막을 사용하는 태양전지 및 그 제조방법 |
| KR100688497B1 (ko) * | 2004-06-28 | 2007-03-02 | 삼성전자주식회사 | 이미지 센서 및 그 제조방법 |
| US7507629B2 (en) | 2004-09-10 | 2009-03-24 | Gerald Lucovsky | Semiconductor devices having an interfacial dielectric layer and related methods |
| US7375378B2 (en) * | 2005-05-12 | 2008-05-20 | General Electric Company | Surface passivated photovoltaic devices |
| DE102005048355A1 (de) | 2005-10-06 | 2007-04-12 | Jungheinrich Aktiengesellschaft | Schubmaststapler |
| US20070137699A1 (en) * | 2005-12-16 | 2007-06-21 | General Electric Company | Solar cell and method for fabricating solar cell |
| KR101205545B1 (ko) * | 2006-08-31 | 2012-11-27 | 김기영 | 태양광 입사효율이 개선된 보호층을 갖는 태양전지 |
| KR100974220B1 (ko) | 2006-12-13 | 2010-08-06 | 엘지전자 주식회사 | 태양전지 |
-
2007
- 2007-03-23 KR KR1020070028845A patent/KR100974226B1/ko not_active IP Right Cessation
-
2008
- 2008-03-18 EP EP08723548.7A patent/EP2130230B1/en not_active Not-in-force
- 2008-03-18 WO PCT/KR2008/001511 patent/WO2008117951A1/en active Application Filing
- 2008-03-18 US US12/530,603 patent/US8658884B2/en not_active Expired - Fee Related
- 2008-03-18 CN CN2008800093282A patent/CN101641797B/zh not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4865999A (en) * | 1987-07-08 | 1989-09-12 | Glasstech Solar, Inc. | Solar cell fabrication method |
| US5720827A (en) * | 1996-07-19 | 1998-02-24 | University Of Florida | Design for the fabrication of high efficiency solar cells |
| US6846984B2 (en) * | 2000-04-27 | 2005-01-25 | Universitat Konstanz | Solar cell and method for making a solar cell |
| US6692985B2 (en) * | 2001-06-07 | 2004-02-17 | Industrial Technology Research Institute | Solar cell substrate with thin film polysilicon |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2130230A4 (en) | 2013-06-19 |
| EP2130230A1 (en) | 2009-12-09 |
| KR20080086753A (ko) | 2008-09-26 |
| US8658884B2 (en) | 2014-02-25 |
| CN101641797A (zh) | 2010-02-03 |
| KR100974226B1 (ko) | 2010-08-06 |
| WO2008117951A1 (en) | 2008-10-02 |
| US20100096013A1 (en) | 2010-04-22 |
| EP2130230B1 (en) | 2014-10-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101641797B (zh) | 包括由高k电介质组成的背面反射层的太阳能电池 | |
| JP5409007B2 (ja) | 高効率の太陽電池及びその調製方法 | |
| JP5161521B2 (ja) | 太陽電池および太陽電池を製造する方法 | |
| TWI355752B (en) | Solar cell | |
| CN102804407B (zh) | 半导体设备和半导体设备的制造方法 | |
| CN101884116A (zh) | 太阳能电池及其制造方法 | |
| JP2009283886A (ja) | 高性能な光電デバイス | |
| EP2533296A1 (en) | Process for production of back-electrode-type solar cell, back-electrode-type solar cell, and back-electrode-type solar cell module | |
| TWI673883B (zh) | 太陽電池元件及太陽電池元件之製造方法 | |
| US20140041720A1 (en) | Solar cell | |
| CN102625953A (zh) | 太阳能电池前接触件掺杂 | |
| CN105185863A (zh) | 用于制造太阳能电池的方法 | |
| KR101359681B1 (ko) | 금속산화물 박막 기판, 그 제조방법, 이를 포함하는 광전지 및 유기발광소자 | |
| KR100994924B1 (ko) | 태양전지 및 그 제조방법 | |
| KR101076611B1 (ko) | 태양 전지 및 그 제조 방법 | |
| Vivaldo et al. | Study of the photon down‐conversion effect produced by thin silicon‐rich oxide films on silicon solar cells | |
| EP3329520B1 (en) | Back contact photovoltaic cells with induced junctions | |
| KR101381844B1 (ko) | 양면형 태양전지 제조방법 | |
| JPWO2009131212A1 (ja) | 太陽電池 | |
| Tang et al. | Preparation of n+ emitter on p-type silicon wafer using the spin-on doping method | |
| KR20120003732A (ko) | 태양전지 | |
| JP2013535830A (ja) | 透明電極を製造する方法、光電池を製造する方法、ならびに構造 | |
| KR101129422B1 (ko) | 태양전지 제조방법 및 그로 인해 제조된 태양전지 | |
| TWI718803B (zh) | 電極結構與太陽電池結構 | |
| KR20080090074A (ko) | 태양전지의 후면반사막 형성방법, 이를 포함하는후면전극부 형성방법 및 태양전지의 제조방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110216 Termination date: 20180318 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |