CN101635291B - Mini-size package lead frame structure and processing method thereof - Google Patents

Mini-size package lead frame structure and processing method thereof Download PDF

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Publication number
CN101635291B
CN101635291B CN 200910164215 CN200910164215A CN101635291B CN 101635291 B CN101635291 B CN 101635291B CN 200910164215 CN200910164215 CN 200910164215 CN 200910164215 A CN200910164215 A CN 200910164215A CN 101635291 B CN101635291 B CN 101635291B
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China
Prior art keywords
pin
mini
mold locking
size package
lead wire
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CN 200910164215
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CN101635291A (en
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曾德鑫
王廉发
潘强华
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LESHAN-PHOENIX SEMICONDUCTOR Co Ltd
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LESHAN-PHOENIX SEMICONDUCTOR Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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Abstract

The invention discloses a technological process for mini-size package lead wire frame structure. The mini-size package lead wire frame structure comprises a chip welding area and four lead wire inner frames, each lead wire inner frame is provided with an outer pin, an inner pin mold locking structure and an inner pin welding wire area, the back of the chip welding area is provided with an exposed radiating disk, each lead wire inner frame is further provided with outer pin mold locking structures which are grooves arranged at two lateral angles of the outer pin.The processing method of the mini-size package lead wire frame comprises the following steps: performing die-cutting and molding on a base material to form outer contours of inner pins, the outer pins and the chip welding area; performing deep stamping to form the inner pins, the outer pins, the exposed radiating disk and the chip welding area, thus initially forming the shape and the structure of the inner pin welding wire area; performing deep stamping to form the outer pin mold locking structure; and bending and molding to form the inner pin welding wire area and the inner pin mold locking structure. The invention has low cost and high reliability, realizes the plastic package of a chip with higher power on the mini-size package and provides a development platform for the mini-size package of the exposed radiating disk.

Description

A kind of process of microencapsulated lead frame
Technical field
The present invention relates to integrated circuit encapsulation technology field, particularly relate to a kind of process of microencapsulated lead frame.
Background technology
Lead frame is that the plastic semiconductor encapsulation field is most important, one of the most basic encapsulating material.Encapsulating material main in semiconductor plastic package is: lead frame, plastic packaging material, chip and lead-in wire.Lead frame is supporting whole packaging body in whole packaging body, its structural design is particularly important.At first lead frame chips welding district wants supporting chip, and the welding region of chip is provided, and also is the conductivity of package interior simultaneously, the conductivity between device and the circuit board, and during device work and the heat conduction between the circuit board.At present, the requirement of, slim hand-held electronic product small-sized for satisfying, as mobile phone, MP3, MP4, DV etc. and the microencapsulated of development is higher to the Structural Design Requirement of lead frame, the structural design of lead frame seems extremely important.The design of lead frame should be satisfied the requirement of final products, makes that again packaging technology is easy to realize.Current, expose the main employing in the IC of large-size encapsulation of heat dissipation plate encapsulation, and on microencapsulated, be subjected to the restriction of encapsulated space can't realize exposing heat dissipation plate design.What traditional IC exposed that the lead frame of heat dissipation plate encapsulation adopts is the etch process manufacturing, and cost is high and be difficult to realize.
Summary of the invention
The objective of the invention is to overcome above-mentioned the deficiencies in the prior art, a kind of process of microencapsulated lead frame is provided, make and realize that on microencapsulated heat dissipation plate exposes, and satisfies more powerful Chip Packaging, and has guaranteed packaging technology and reliability of products.
The technical solution used in the present invention is: a kind of microencapsulated lead frame structure, comprise chips welding district and lead-in wire inside casing, the lead-in wire inside casing is provided with outer pin, interior pin mold locking structure and interior pin wire welding area, the back side in described chips welding district is provided with exposes heat dissipation plate, also be provided with outer pin mold locking structure on the lead-in wire inside casing, outer pin mold locking structure is the groove of offering on pin two side angles of outer pin.
As preferably, describedly expose the zone that heat dissipation plate is a chips welding district back side projection, and one-body molded with the chips welding district.
As preferably, the described heat dissipation plate thickness that exposes is 50 microns.
A kind of process that is used for the above microencapsulated lead frame of the present invention may further comprise the steps:
A. to the base material punching molding, form the appearance profile in inside and outside pin and chips welding district;
B. deep stamping, the pressure extrusion material that utilizes drift to produce, the material thickness after the extruding is half of base material, forms interior pin, exposes heat dissipation plate and chips welding district, the shape and structure of pin wire welding area in beginning to take shape, and cut burr and the clout that produces in the deep stamping;
C. deep stamping forms outer pin mold locking structure;
D. the moulding of bending, pin wire welding area and interior pin mold locking structure in forming.
The invention has the advantages that: with low cost, reliability is high, the present invention adopts deep stamping technology and traditional punching press, clicking technique to combine on general blaster fuse frame material, the heat dissipation plate that formation exposes, interior pin wire welding area and special mould-locking structure, make and realize that on microencapsulated heat dissipation plate exposes, satisfy more powerful Chip Packaging and guaranteed packaging technology and reliability of products.
Description of drawings
Fig. 1 is the perspective view in front of the present invention;
Fig. 2 is the perspective view at the back side of the present invention;
Fig. 3 A~3D is followed successively by process schematic representation of the present invention.
Embodiment
The present invention is described in further detail below in conjunction with drawings and the specific embodiments.
As depicted in figs. 1 and 2, a kind of microencapsulated lead frame structure, comprise that chips welding district 4 and four are centered around the lead-in wire inside casing around the chips welding district 4, the lead-in wire inside casing is provided with outer pin 2, interior pin mold locking structure 3 and interior pin wire welding area 1, the back side in described chips welding district 4 is provided with exposes heat dissipation plate 6, also be provided with outer pin mold locking structure 5 on the lead-in wire inside casing, the groove of outer pin mold locking structure 5 for offering on pin two side angles of outer pin 2.The described heat dissipation plate 6 that exposes is a zone of chips welding district 4 back side projectioies, and one-body molded with chips welding district 4.Described heat dissipation plate 6 thickness that expose are 50 microns.Pin wire welding area 1 is the interior pin plane domain that projection forms that makes progress in described, and the thickness of interior pin wire welding area 1 is outer pin 2 thickness half, and the ledge structure of interior pin wire welding area 1 side is interior pin mold locking structure 3.
In microencapsulated, because the space in the packaging body is very little, the mould lock construction is limited, be aided with outer pin mold locking structure 5, make behind plastic packaging outside pin 2 fix more firmly, with the external force of opposing in follow-up packaging technology, guarantee that in follow-up manufacturing process outer pin 2 can not taken off.Expose heat dissipation plate 6 and be positioned at the back in chips welding district 4.In the device course of work, transmit heat that chip the produces fin to the circuit board, keep the continuous firing of device.
A kind of process that is used for the above microencapsulated lead frame of the present invention may further comprise the steps:
A. as shown in Figure 3A, to the base material punching molding, the appearance profile in pin, outer pin 2 and chips welding district 4 in forming;
B. shown in Fig. 3 B, deep stamping, the pressure extrusion material that utilizes drift to produce, material thickness after the extruding is half of base material, form interior pin, expose heat dissipation plate 6 and chips welding district 4, the shape and structure of pin wire welding area 1 in beginning to take shape, and cut burr and the clout that in deep stamping, produces;
C. shown in Fig. 3 C, deep stamping forms outer pin mold locking structure 5;
D. shown in Fig. 3 D, the moulding of bending forms interior pin wire welding area 1 and interior pin mold locking structure 3.

Claims (1)

1. the process of a microencapsulated lead frame is characterized in that: may further comprise the steps:
A. to the base material punching molding, form the appearance profile in inside and outside pin and chips welding district;
B. deep stamping, the pressure extrusion material that utilizes drift to produce, the material thickness after the extruding is half of base material thickness, forms interior pin, exposes heat dissipation plate and chips welding district, the shape and structure of pin wire welding area in beginning to take shape, and cut burr and the clout that in deep stamping, produces;
C. deep stamping forms outer pin mold locking structure;
D. the moulding of bending, pin wire welding area and interior pin mold locking structure in forming.
CN 200910164215 2009-08-21 2009-08-21 Mini-size package lead frame structure and processing method thereof Active CN101635291B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 200910164215 CN101635291B (en) 2009-08-21 2009-08-21 Mini-size package lead frame structure and processing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 200910164215 CN101635291B (en) 2009-08-21 2009-08-21 Mini-size package lead frame structure and processing method thereof

Publications (2)

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CN101635291A CN101635291A (en) 2010-01-27
CN101635291B true CN101635291B (en) 2011-06-15

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9601415B2 (en) * 2014-03-27 2017-03-21 Renesas Electronics Corporation Method of manufacturing semiconductor device and semiconductor device
JP6657001B2 (en) * 2016-04-19 2020-03-04 株式会社デンソーテン Printed wiring board
CN110277319B (en) * 2019-06-19 2022-04-19 泰州东田电子有限公司 Manufacturing method of lead frame of profiled bar

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