CN101626006A - 柔性键合铜丝及其制备方法 - Google Patents
柔性键合铜丝及其制备方法 Download PDFInfo
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- CN101626006A CN101626006A CN200910017010A CN200910017010A CN101626006A CN 101626006 A CN101626006 A CN 101626006A CN 200910017010 A CN200910017010 A CN 200910017010A CN 200910017010 A CN200910017010 A CN 200910017010A CN 101626006 A CN101626006 A CN 101626006A
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- Prior art keywords
- copper wire
- preparation
- flexible bonding
- wire
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 32
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000010949 copper Substances 0.000 claims abstract description 19
- 239000000956 alloy Substances 0.000 claims abstract description 15
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 15
- 229910052802 copper Inorganic materials 0.000 claims abstract description 13
- 239000010931 gold Substances 0.000 claims description 18
- 229910052737 gold Inorganic materials 0.000 claims description 18
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 16
- 238000005491 wire drawing Methods 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 238000005275 alloying Methods 0.000 claims description 3
- 230000006378 damage Effects 0.000 abstract description 2
- 238000005266 casting Methods 0.000 abstract 1
- 230000004927 fusion Effects 0.000 abstract 1
- 241000784732 Lycaena phlaeas Species 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241001388119 Anisotremus surinamensis Species 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
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- H—ELECTRICITY
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/45001—Core members of the connector
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/45198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/45298—Fillers
- H01L2224/45299—Base material
- H01L2224/45386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2224/45387—Ceramics, e.g. crystalline carbides, nitrides or oxides
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- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
抗拉强度TS/5%N/mm2 | 球硬度HV | |
金丝4N | 200-300 | 40-65 |
普通铜丝 | 250-350 | 70-75 |
本发明柔性铜丝 | 280-285 | 59--62 |
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009100170105A CN101626006B (zh) | 2009-07-09 | 2009-07-09 | 柔性键合铜丝及其制备方法 |
Applications Claiming Priority (1)
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CN2009100170105A CN101626006B (zh) | 2009-07-09 | 2009-07-09 | 柔性键合铜丝及其制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN101626006A true CN101626006A (zh) | 2010-01-13 |
CN101626006B CN101626006B (zh) | 2012-06-20 |
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CN2009100170105A Active CN101626006B (zh) | 2009-07-09 | 2009-07-09 | 柔性键合铜丝及其制备方法 |
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CN (1) | CN101626006B (zh) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102324392A (zh) * | 2011-10-19 | 2012-01-18 | 广东佳博电子科技有限公司 | 一种防氧化的铜基键合丝的制备工艺 |
CN102332439A (zh) * | 2011-10-19 | 2012-01-25 | 浙江佳博科技股份有限公司 | 一种具有防氧化层的铜基键合丝及其加工工艺 |
CN102350444A (zh) * | 2011-07-15 | 2012-02-15 | 安徽鑫科新材料股份有限公司 | 一种锌黄铜丝的加工工艺 |
CN102361026A (zh) * | 2011-10-19 | 2012-02-22 | 广东佳博电子科技有限公司 | 一种具有防氧化功能的铜基键合丝 |
CN102660695A (zh) * | 2012-04-17 | 2012-09-12 | 重庆材料研究院 | 一种铜丝及其制备屏蔽铜网的方法 |
CN103824833A (zh) * | 2012-11-16 | 2014-05-28 | 吕传盛 | 半导体封装用的铜合金线 |
CN105161476A (zh) * | 2015-06-19 | 2015-12-16 | 汕头市骏码凯撒有限公司 | 一种用于细间距ic封装的键合铜丝及其制造方法 |
CN108598058A (zh) * | 2017-12-21 | 2018-09-28 | 汕头市骏码凯撒有限公司 | 一种铜合金键合丝及其制造方法 |
CN110718526A (zh) * | 2019-10-22 | 2020-01-21 | 烟台一诺电子材料有限公司 | 一种超细线距电子封装用稀土铜合金键合丝及其制备方法 |
CN111057971A (zh) * | 2019-12-23 | 2020-04-24 | 深圳金斯达应用材料有限公司 | 一种微合金高精度铜合金电子材料及其制备方法 |
CN113088837A (zh) * | 2021-04-15 | 2021-07-09 | 江西富鸿金属有限公司 | 一种医疗用高弹性镀锡合金线及其制备方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3382918B2 (ja) * | 2000-05-31 | 2003-03-04 | 田中電子工業株式会社 | 半導体素子接続用金線 |
CN100394592C (zh) * | 2006-07-11 | 2008-06-11 | 中国印钞造币总公司 | 一种键合金丝及其制造方法 |
CN100421246C (zh) * | 2006-11-03 | 2008-09-24 | 宁波康强电子股份有限公司 | 键合铜丝及其制备方法 |
CN100428460C (zh) * | 2006-11-03 | 2008-10-22 | 宁波康强电子股份有限公司 | 一种键合铜丝及其制备方法 |
-
2009
- 2009-07-09 CN CN2009100170105A patent/CN101626006B/zh active Active
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102350444A (zh) * | 2011-07-15 | 2012-02-15 | 安徽鑫科新材料股份有限公司 | 一种锌黄铜丝的加工工艺 |
CN102332439A (zh) * | 2011-10-19 | 2012-01-25 | 浙江佳博科技股份有限公司 | 一种具有防氧化层的铜基键合丝及其加工工艺 |
CN102361026A (zh) * | 2011-10-19 | 2012-02-22 | 广东佳博电子科技有限公司 | 一种具有防氧化功能的铜基键合丝 |
CN102332439B (zh) * | 2011-10-19 | 2013-08-21 | 浙江佳博科技股份有限公司 | 一种具有防氧化层的铜基键合丝加工工艺 |
CN102324392A (zh) * | 2011-10-19 | 2012-01-18 | 广东佳博电子科技有限公司 | 一种防氧化的铜基键合丝的制备工艺 |
CN102660695B (zh) * | 2012-04-17 | 2015-07-29 | 重庆材料研究院 | 一种铜丝及其制备屏蔽铜网的方法 |
CN102660695A (zh) * | 2012-04-17 | 2012-09-12 | 重庆材料研究院 | 一种铜丝及其制备屏蔽铜网的方法 |
CN103824833A (zh) * | 2012-11-16 | 2014-05-28 | 吕传盛 | 半导体封装用的铜合金线 |
CN105161476A (zh) * | 2015-06-19 | 2015-12-16 | 汕头市骏码凯撒有限公司 | 一种用于细间距ic封装的键合铜丝及其制造方法 |
CN105161476B (zh) * | 2015-06-19 | 2018-10-30 | 汕头市骏码凯撒有限公司 | 一种用于细间距ic封装的键合铜丝及其制造方法 |
CN108598058A (zh) * | 2017-12-21 | 2018-09-28 | 汕头市骏码凯撒有限公司 | 一种铜合金键合丝及其制造方法 |
CN108598058B (zh) * | 2017-12-21 | 2020-05-19 | 汕头市骏码凯撒有限公司 | 一种铜合金键合丝及其制造方法 |
CN110718526A (zh) * | 2019-10-22 | 2020-01-21 | 烟台一诺电子材料有限公司 | 一种超细线距电子封装用稀土铜合金键合丝及其制备方法 |
CN111057971A (zh) * | 2019-12-23 | 2020-04-24 | 深圳金斯达应用材料有限公司 | 一种微合金高精度铜合金电子材料及其制备方法 |
CN113088837A (zh) * | 2021-04-15 | 2021-07-09 | 江西富鸿金属有限公司 | 一种医疗用高弹性镀锡合金线及其制备方法 |
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