CN100428460C - 一种键合铜丝及其制备方法 - Google Patents

一种键合铜丝及其制备方法 Download PDF

Info

Publication number
CN100428460C
CN100428460C CNB2006101544855A CN200610154485A CN100428460C CN 100428460 C CN100428460 C CN 100428460C CN B2006101544855 A CNB2006101544855 A CN B2006101544855A CN 200610154485 A CN200610154485 A CN 200610154485A CN 100428460 C CN100428460 C CN 100428460C
Authority
CN
China
Prior art keywords
copper
intermediate alloy
bonding brass
single crystal
brass wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CNB2006101544855A
Other languages
English (en)
Other versions
CN1949492A (zh
Inventor
房跃波
郑志法
郑康定
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ningbo Kangqiang Electronic Technology Co Ltd
Original Assignee
NINGBO KANGQIANG ELECTRONICS CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NINGBO KANGQIANG ELECTRONICS CO Ltd filed Critical NINGBO KANGQIANG ELECTRONICS CO Ltd
Priority to CNB2006101544855A priority Critical patent/CN100428460C/zh
Publication of CN1949492A publication Critical patent/CN1949492A/zh
Application granted granted Critical
Publication of CN100428460C publication Critical patent/CN100428460C/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01205—5N purity grades, i.e. 99.999%
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/2076—Diameter ranges equal to or larger than 100 microns

Abstract

本发明涉及一种键合铜丝及其制备方法。该键合铜丝材料配方重量百分比为：钙0.0005～0.001%，铈或钛0.0003～0.0007%，余量为铜，其含量≥99.996%。其制备方法为：a.提供铜材料，b.电解提纯得99.999wt%的提纯铜，c.金属单晶水平连铸得到99.9999wt%的单晶铜，d.制作中间合金，e.按所述键合铜丝材料配方加入过程c和d制得的单晶铜和中间合金进行金属单晶水平连铸，制得键合铜丝坯料，f.拉伸，g.退火，h.分卷，i.真空包装。该键合铜丝价格低廉，具有较好的机械性能和抗氧化性能，保证了流畅的封装键合过程。

Description

一种键合铜丝及其制备方法
技术领域
本发明涉及一种键合铜丝及其制备方法。
背景技术
国内已有的半导体封装引线键合材料，尤其是主要应用于集成电路和半导体分立器件中的键合丝，主要是使用金丝，其化学性质稳定。但是，由于其材料金价格昂贵，使得制造成本居高不下，另外，随着集成电路规模越来越大，封装密度越来越高，要求作为内引线的键合丝需具有较高的强度、低长弧度、弧形稳定性等，而键合金丝已经很难满足这样高的要求了。
目前，已有部分进口品牌的键合铜丝开始在中国大陆部分集成封装厂进入适用阶段，这些进口品牌的键合铜丝基本上能够满足现代键合工艺的要求，但是在使用中还是存在很多问题，比如由于产品中铜纯度较低、产品过硬引起的第二焊点逃丝(也叫缩丝)使得键合操作频繁中断；由于产品的高氧化特性，在打开包装后必须10个小时内使用完，且使用时必须加氮氢混合气体加以保护，使生产现场周围弥散有易燃易爆性气体而危险性增加，加装排风系统又使其温度湿度等条件远远达不到标准要求等。因此由于以上缺陷，这些进口品牌的键合铜丝至今也没有得到大批量应用，尤其是在集成电路方面。
发明内容
本发明的目的是提供一种键合铜丝，该键合铜丝成本低廉，具有较好的机械性能和抗氧化性能，避免了第二焊点逃丝，保证了流畅的封装键合过程，尤其是在键合过程中，可以去掉危险的保护气体-氢气，而只使用高纯氮气即可很好的完成键合过程。
本发明的另一目的是提供一种所述的键合铜丝的制备方法。
本发明的一种键合铜丝，其材料配方重量百分比为：钙0.0005～0.001％，铈或钛0.0003～0.0007％，余量为铜。
本发明所述的键合铜丝金相组织为单晶结构。
所述键合铜丝的材料配方成分的选择在于，钙(Ca)主要是提高键合铜丝的断裂载荷，并适当降低键合铜丝的弧高。铈(Ce)主要是改善材料的抗疲劳性，提高材料的的表面抗氧化性。钛(Ti)除了可以提高材料的机械强度外，还具有很好的抗氧化性。除此之外，钙(Ca)和铈(Ce)，钙(Ca)和钛(Ti)的共同作用是和铜形成固溶体，以固溶体强化的方式改善键合铜丝的机械强度；钙(Ca)加铈(Ce)的组合或钙(Ca)加钛(Ti)的组合，都提高了材料的表面抗氧化性，提高了材料的可焊接性，因此能够较好地避免第二焊点逃丝。以上几种元素的共同优点是可以提高材料应用性能，但都不会影响键合铜丝的导电性，电阻率不会增加。
对于金属材料而言，通常纯度越大，其抗氧化能力就越强。键合铜丝丝材纵向组织结构金相为单晶结构，可以有效降低材料的电阻率、提高导电性，进一步增强抗氧化作用。
本发明采用的键合铜丝的制备方法，其方法过程包括：a.提供铜材料，b.电解提纯得99.999wt％的提纯铜，c.金属单晶水平连铸得到99.9999wt％的单晶铜，d.制作中间合金，e.按所述键合铜丝材料配方加入过程c和d制得的单晶铜和中间合金进行金属单晶水平连铸，制得键合铜丝坯料，f.拉伸，g.退火，h.分卷，i.真空包装；其中，电解电流0.5～3A，电解液温度40～60℃；金属单晶水平连铸温度为1100～1250℃，铸造速度为10～20mm/min，且在10-2Pa真空度下进行；中间合金包括铜-钙中间合金，铜-铈或铜-钛中间合金，其制作方法为：提供c步骤的单晶铜，钙或铈或钛，投料，在10-4Pa真空度下熔炼15～20min，浇铸，酸洗；所述中间合金中钙或铈或钛在铜中的重量百分比为0.53～0.57％；退火温度为320～510℃，且在99.999％的高纯氮气保护中进行。
制作中间合金步骤中的钙或铈或钛原料纯度≥99.99wt％，均为市面销售产品。所述中间合金熔炼温度为1215～1245℃，在此温度下，中间合金金属材料完全熔化。
所述的拉伸过程中的模具延伸率为5～18％。
所述分卷过程的绕丝张力为5～30g，绕丝速度为500～750rpm。
所述金属单晶水平连铸方法采用公开号为CN 1810416A(公开日为2006.08.02)的专利申请所公开的方法；在所述的中间合金制作投料时，将钙或铈或钛置于单晶铜中间。
与现有技术相比，本发明的键合铜丝的优点在于：1.具有较好的抗氧化性，产品在打开真空包装后15天内仍可正常使用。2.使用安全可靠，成功地去掉了氢气保护气而只保留了氮气做为烧球保护气。3.材料成本低，具有优秀的机械性能、硬度和焊接性能，不会产生第二焊点逃丝问题，能完全替代普通键合金丝。
具体实施方式
以下结合实施例对本发明作进一步详细描述。以下所列设计要求系根据国外同类产品标准并参照国内客户技术要求而制定的。
实施例1
电解提纯铜：将要电解的铜材料在中频炉中熔化(加真空保护)后，浇铸成150mm×60mm×10mm长方形块作为阳极顶部钻5mm直径的孔，阴极片(铂片，尺寸一般为150mm×60mm×0.5mm)备好。在电解槽中加入硫酸铜溶液(分析醇级)作为电解液，将阳极粗铜块通过导电棒挂于电解槽左上方，保证每个阳极块的95％体积浸入电解液中，将阳极导电棒接到整流电源的正极上；将阴极片通过导电棒挂于电解槽右上方，保证每个阴极片的95％体积浸入电解液中，将阴极导电棒接到整流电源的负极上。打开整流电源，调节直流电压至0.6～0.7V左右，电流2-2.5A左右，开始电解，控制电解液温度在40～60℃之间以补充新的电解液来调整温度，待阴极片上吸附的提纯铜(99.999wt％)达到约1公斤左右时，更换阴极片，将提纯铜先用高纯水(电阻率10～15MΩ)冲洗掉表面的酸，再用稀盐酸(5～10wt％浓度)处理表面杂质后，重新用高纯水冲洗干净，再用干净的压缩空气吹干。
制备99.9999wt％的单晶铜：提供一个在氩气气氛中水平连铸金属单晶的连铸室，加入99.999wt％的提纯铜后，抽真空至10-2Pa，1100～1250℃下进行中频加热及熔炼。在完成熔化、精炼和除气后，将金属熔液注入到连铸室的中间储液池，保温，在维持2～5升/分净化氩气流量的连铸室中完成金属熔液的水平单晶连铸，得到99.9999wt％的单晶铜。
制备中间合金：纯度为99.9999wt％的单晶铜备好(2000±0.5克)，将元素钙(纯度99.99wt％)称量11±0.5克各好。钙在铜中的重量百分比为0.55±0.02％。先将100克高纯铜放入石英坩埚底部，再将称量好的钙放入此部分铜的上面，再将其余的高纯铜放在钙的上面，盖好炉盖，抽真空，当真空度达到0.1×10-3Pa时开始加热并注意观察材料的熔化情况，当炉内温度在1215～1245℃时，金属完全熔化，维持此温度，精炼15～20分钟，待钙元素充分混合均匀同时观察金属溶液开始变白后开始浇铸，小心地转动坩埚，将金属液体缓缓注入石墨铸模中，浇铸结束后停止加热，保持真空，直到炉内完全冷却下来，开炉取出制作好的中间合金，用稀盐酸将合金表面处理干净，再用高纯水冲洗掉表面稀酸后用干净的压缩空气将合金表面吹干，得到铜-钙中间合金。
同样方法制备铜-铈中间合金。
制备键合铜丝坯料：提供一个在氩气气氛中水平连铸金属单晶的连铸室，加入0.024kg铜-钙中间合金，0.018kg铜-铈中间合金，19.958kg 99.9999wt％的单晶铜，抽真空至10-2Pa，1100～1250℃下进行中频加热及熔炼。在完成熔化、精炼和除气后，将金属熔液注入到连铸室的中间储液池，保温，在维持2～5升/分净化氩气流量的连铸室中完成金属熔液的水平单晶连铸，得到规格为Φ8mm的键合铜丝坯料。
拉伸及退火工艺为：Φ8mm→Φ1.5mm，模具延伸率18％，拉伸速度5～30m/min，退火，酸洗；Φ1.5mm→Ф0.1mm，模具延伸率12％，拉伸速度100～240m/min，退火，酸洗；Φ0.1mm→Φ0.08mm，模具延伸率9％，拉伸速度200～360m/min，退火，酸洗；Φ0.08mm→Φ0.015mm，模具延伸率6％，拉伸速度6～15m/s，退火，酸洗。退火温度都为320～510℃，且都是在99.999％的高纯氮气保护中进行。
分卷：以500米为一单卷长度，控制绕丝张力为5～30g，绕丝速度为500～750rpm。
真空包装：采用普通食品级真空度包装。
此所得键合铜丝的产品的性能测试参数列于表1。
实施例2
按以下表1中指定的各组分含量重复实施例1的方法，但用钛代替铈，在表1中列出了性能测试参数。
实施例3
按以下表2中指定的各组分含量重复实施例1的方法，在表2中列出了性能测试参数。
实施例4
按以下表2中指定的各组分含量重复实施例2的方法，在表2中列出了性能测试参数。
实施例5
按以下表3中指定的各组分含量重复实施例1的方法，在表3中列出了性能测试参数。
实施例6
按以下表3中指定的各组分含量重复实施例2的方法，在表3中列出了性能测试参数。
表1
Figure C20061015448500061
表2
表3
Figure C20061015448500072
注：1).熔断电流数据中，最小值，其测试线径Φ18μm、线长10mm。
                       最大值，其测试线径Φ50μm、线长0.6mm。
2).线材硬度测试时，线材的延伸率为4.5-6.5％。
3).电阻率测试时，线材直径为0.2mm，长度为1米，线材呈完全退火状态。
4).抗拉强度测试时，线材的延伸率为4.5-6.5％。
表1、2、3各实施例的性能测试参数都说明，本发明的键合铜丝都可以达到设计要求。
以上6个实施例的最终产品经过键合试验，均完全达到了客户的技术要求，解决了第二焊点的逃丝问题，并且成功地去掉了氢气保护气而只保留了氮气做为烧球保护气；表面抗氧化性试验，在打开产品的真空包装后15天内，产品仍然可以正常被使用。

Claims (7)

1、一种键合铜丝，其材料配方重量百分比为：钙0.0005～0.001％，铈或钛0.0003～0.0007％，余量为铜。
2、根据权利要求1所述的键合铜丝，其特征在于所述的键合铜丝金相组织为单晶结构。
3、一种键合铜丝的制备方法，其方法过程包括：a.提供铜材料，b.电解提纯得99.999wt％的提纯铜，c.金属单晶水平连铸得到99.9999wt％的单晶铜，d.制作中间合金，e.按照权利要求1所述材料配方加入过程c和d制得的单晶铜和中间合金进行金属单晶水平连铸，制得键合铜丝坯料，f.拉伸，g.退火，h.分卷，i.真空包装；其中，电解电流0.5～3A，电解液温度40～60℃；金属单晶水平连铸温度为1100～1250℃，铸造速度为10～20mm/min，且在10-2Pa真空度下进行；中间合金包括铜-钙中间合金，铜-铈或铜-钛中间合金，其制作方法为：提供c步骤的单晶铜，钙或铈或钛，投料，在10-4pa真空度下熔炼15～20min，浇铸，酸洗；所述中间合金中钙或铈或钛在铜中的重量百分比为0.53～0.57％；退火温度为320～510℃，且在99.999％的高纯氮气保护中进行。
4、根据权利要求3所述的键合铜丝的制备方法，其特征在于所述的制作中间合金步骤中的钙或铈或钛原料纯度≥99.99wt％。
5、根据权利要求3或4所述的键合铜丝的制备方法，其特征在于所述的制作中间合金步骤中的熔炼温度为1215～1245℃。
6、根据权利要求3所述的键合铜丝的制备方法，其特征在于所述的拉伸过程中的模具延伸率为5～18％。
7、根据权利要求3所述的键合铜丝的制备方法，其特征在于所述的分卷过程的绕丝张力为5～30g，绕丝速度为500～750rpm。
CNB2006101544855A 2006-11-03 2006-11-03 一种键合铜丝及其制备方法 Active CN100428460C (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNB2006101544855A CN100428460C (zh) 2006-11-03 2006-11-03 一种键合铜丝及其制备方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB2006101544855A CN100428460C (zh) 2006-11-03 2006-11-03 一种键合铜丝及其制备方法

Publications (2)

Publication Number Publication Date
CN1949492A CN1949492A (zh) 2007-04-18
CN100428460C true CN100428460C (zh) 2008-10-22

Family

ID=38018945

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006101544855A Active CN100428460C (zh) 2006-11-03 2006-11-03 一种键合铜丝及其制备方法

Country Status (1)

Country Link
CN (1) CN100428460C (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101626006B (zh) * 2009-07-09 2012-06-20 烟台一诺电子材料有限公司 柔性键合铜丝及其制备方法
CN102130067B (zh) * 2010-12-31 2012-05-02 四川威纳尔特种电子材料有限公司 一种表面镀钯键合铜丝
CN102280388A (zh) * 2011-05-18 2011-12-14 王一平 基于单晶铜键合丝的制备方法
CN102222624A (zh) * 2011-06-03 2011-10-19 厦门迈士通控股集团有限公司 一种单晶铜丝的制备方法
CN102226991B (zh) * 2011-06-12 2012-11-28 徐云管 铜钯合金单晶键合丝及其制造方法
SG190481A1 (en) * 2011-12-01 2013-06-28 Heraeus Materials Tech Gmbh Alloyed 2n copper wire for bonding in microelectronics device
CN102517528B (zh) * 2011-12-09 2013-06-05 徐云管 一种单晶铜合金材料制造超高张力线的方法
CN103219248B (zh) * 2013-03-01 2015-11-25 溧阳市虹翔机械制造有限公司 一种镀金键合铜丝的制造方法
CN104278169B (zh) * 2013-07-12 2016-08-31 河南理工大学 一种耐腐蚀键合铜丝及其制备方法
CN107546133A (zh) * 2017-09-11 2018-01-05 佛山慧创正元新材料科技有限公司 软性抗氧化铜丝的制备方法
CN107611039A (zh) * 2017-09-18 2018-01-19 佛山慧创正元新材料科技有限公司 一种高强度键合铜丝的制备方法及应用
CN107723488B (zh) * 2017-10-09 2019-11-08 南理工泰兴智能制造研究院有限公司 一种耐氧化键合铜丝材料的制备方法
CN115011835A (zh) * 2022-06-13 2022-09-06 上杭县紫金佳博电子新材料科技有限公司 一种镀银键合铜丝及其制备方法、应用

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN85106185A (zh) * 1985-08-08 1987-02-25 机械工业部上海电器科学研究所 电阻焊电极合金材料及其制造方法
JPS62104061A (ja) * 1985-10-30 1987-05-14 Tatsuta Electric Wire & Cable Co Ltd 半導体素子用ボンデイング線およびその製造方法
CN1730691A (zh) * 2005-08-15 2006-02-08 浙江海亮股份有限公司 空调管用铜合金
CN1787137A (zh) * 2005-11-18 2006-06-14 哈尔滨东大高新材料股份有限公司 微量添加元素银的铜－金刚石电触头材料

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN85106185A (zh) * 1985-08-08 1987-02-25 机械工业部上海电器科学研究所 电阻焊电极合金材料及其制造方法
JPS62104061A (ja) * 1985-10-30 1987-05-14 Tatsuta Electric Wire & Cable Co Ltd 半導体素子用ボンデイング線およびその製造方法
CN1730691A (zh) * 2005-08-15 2006-02-08 浙江海亮股份有限公司 空调管用铜合金
CN1787137A (zh) * 2005-11-18 2006-06-14 哈尔滨东大高新材料股份有限公司 微量添加元素银的铜－金刚石电触头材料

Also Published As

Publication number Publication date
CN1949492A (zh) 2007-04-18

Similar Documents

Publication Publication Date Title
CN100428460C (zh) 一种键合铜丝及其制备方法
CN100421246C (zh) 键合铜丝及其制备方法
CN102912176B (zh) 高端封装银合金键合丝及其制备方法
CN103194637B (zh) 一种键合合金银丝及制备方法
CN103199073B (zh) 银钯合金单晶键合丝及其制造方法
CN102666888B (zh) 高强度高导电性铜合金
CN102776405B (zh) 一种键合金银合金丝的制备方法
CN102121077B (zh) 一种键合金丝的制备方法
CN102127663B (zh) 键合金丝及其制备方法
CN106992164B (zh) 一种微电子封装用铜合金单晶键合丝及其制备方法
CN109767991B (zh) 一种高金合金键合丝的制备方法
CN105132735A (zh) 一种微电子封装用超细铜合金键合丝及其制备方法
CN114959356B (zh) 一种高电阻率、低温漂的铜基精密电阻合金及其制备方法
CN102517528B (zh) 一种单晶铜合金材料制造超高张力线的方法
CN110129612B (zh) 一种贴片保险丝熔丝用银铜合金线及其制造方法
CN101630664B (zh) 一种银基键合丝及其制备方法
CN102560192B (zh) 一种高强高塑性铜合金及其制备方法
CN105543563B (zh) 一种减少钛元素烧损的锌铜钛中间合金熔炼方法
JP5152897B2 (ja) 銅ボンディングワイヤ
CN104835798B (zh) 一种抗氧化键合铜丝的制备方法
CN102994786A (zh) 一种制备高导电率无氧铜的方法及化料装置
CN103199072A (zh) 镀金铜钯合金单晶键合丝及其制造方法
CN106811626A (zh) 一种稀土铝合金导线
CN105177345A (zh) 一种微电子封装用高可靠性铜合金键合丝及其制备方法
CN100386456C (zh) 特种硅青铜合金及其制造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20181129

Address after: 315100 No. 988 Jinyuan Road, Yinzhou District, Ningbo City, Zhejiang Province (Yinzhou Investment and Venture Center)

Patentee after: Ningbo Kangqiang Electronic Technology Co Ltd

Address before: 315105 Panhuo Industrial Zone, Yinzhou District, Ningbo City, Zhejiang Province

Patentee before: Ningbo Kangqiang Electronics Co., Ltd.