CN101615600A - A kind of high-thermal conductivity electronic packaging material and preparation method thereof - Google Patents
A kind of high-thermal conductivity electronic packaging material and preparation method thereof Download PDFInfo
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Abstract
The invention belongs to the electronic package material technical field, a kind of high-thermal conductivity electronic packaging material and preparation method thereof is provided.Encapsulating material comprises that the enhancing body, pure copper powder and the 3rd constituent element that contain the diamond particles composition are, chromium or molybdenum or silicon or titanium or tungsten constitute, wherein, strengthening body shared volume fraction in material is the shared volume fraction 0.01%～10% of the 25%～80%, the 3rd constituent element.The preparation method of encapsulating material evenly mixes enhancing body, pure copper powder, the 3rd constituent element by proportioning, uses hydrogen reducing in reduction furnace, 1～5 hour time, 200～400 ℃ of temperature; Then mixed-powder is packed in the graphite jig, adopt discharge plasma sintering process: vacuumize, the programming rate with 50～200 ℃/min is heated to 700～1100 ℃ again, and the 20～50MPa that pressurizes, be incubated 1～20 minute after reaching sintering temperature, take out the demoulding with stove cooling back.
Description
Technical field
The invention belongs to the electronic package material technical field, a kind of high-thermal conductivity electronic packaging material and preparation method thereof is provided.
Background technology
Continuous development along with electronic technology, the integrated degree of electronic devices and components is more and more higher, caloric value is also increasing, microprocessor and power semiconductor usually can't operate as normal because temperature is too high in application process, and heat dissipation problem has become one of major technique bottleneck that the electronics and information industry development faces.Traditional electronic package material mainly contains: Al, Cu, Kovar alloy, Invar alloy, W/Cu alloy, Mo/Cu alloy etc.The thermal coefficient of expansion of Al, Cu is excessive, does not match with ceramic substrate; The Kovar alloy, Invar alloy thermal conductivity is low excessively, heat diffusion capabilities is poor; W/Cu alloy, Mo/Cu alloy density are bigger, and heat conductivility can't satisfy the Electronic Packaging development need of modern high power device.
Diamond has good physical property, and its room temperature thermal conductivity is 600-2200W/mK, thermal coefficient of expansion 0.8 * 10
-6/ K can be with itself and the compound electronic package material for preparing of high-thermal conductive metal.Nineteen ninety-five, the U.S. developed diamond/carbon/carbon-copper composite material, was referred to as Dymalloy, employing be the composite material of vacuum infiltration method preparation, use as the substrate of multi-chip module, thermal conductivity can reach 420W/mK, CTE is 5.48～6.5 * 10
-6/ K, but complicated process of preparation, cost height.(1420～1470K 4.5GPa) prepares diamond/carbon/carbon-copper composite material to Japanese scientist Yoshida in 2003 etc., and thermal conductivity is up to 742W/mK by HTHP.Employing high temperature and high pressure methods such as Russia Ekimov are prepared diamond/carbon/carbon-copper composite material that heat conduction can reach 900W/mK, but the volume that can obtain is very little, and using value is little.
Summary of the invention
Technical problem to be solved by this invention provides a kind of high-thermal conductivity electronic packaging material and preparation method thereof that has.
Technical solution of the present invention is as follows:
Encapsulating material comprises that the enhancing body, pure copper powder and the 3rd constituent element that contain the diamond particles composition are, chromium or molybdenum or silicon or titanium or tungsten constitute, wherein, strengthening body shared volume fraction in material is the shared volume fraction 0.01%～10% of the 25%～80%, the 3rd constituent element.
Described enhancing body is diamond particles or diamond particles and the mixing of silicon-carbide particle; Wherein, strengthen diamond particle size 7～500 μ m in the body, silicon-carbide particle size 1～120 μ m, diamond shared volume fraction 25%～80% in encapsulating material, carborundum shared volume fraction 0%～50% in encapsulating material.
Described diamond particles and silicon-carbide particle are not plating particle or copper-plated particle.
The preparation method of high-thermal conductivity electronic packaging material is, will strengthen body, pure copper powder, the 3rd constituent element and evenly mix by proportioning, uses hydrogen reducing in reduction furnace, 1～5 hour time, 200～400 ℃ of temperature; Then mixed-powder is packed in the graphite jig, adopt discharge plasma sintering process: vacuumize, the programming rate with 50～200 ℃/min is heated to 700～1100 ℃ again, and the 20～50MPa that pressurizes, be incubated 1～20 minute after reaching sintering temperature, take out the demoulding with stove cooling back.
Advantage of the present invention:
The electronic package material thermal conductivity of 1 the present invention preparation is at 350～760W/mK, coefficient of linear expansion 4.7～12 * 10
-6/ K has improved the reliability of encapsulating material, can satisfy the demand of high power integrated circuit to electronic package material.
2 the present invention can save the complicated expensive technology of HTHP etc., and technology is simple, efficient is high.
The adding of 3 chromium, molybdenum, silicon, titanium, tungsten can improve the interface bonding state of diamond and copper, reduces the interface resistance of diamond and copper, thereby obtains the electronic package material of high thermal conductivity.
4 use silicon-carbide particle to substitute a part of diamond particles, can significantly reduce cost when heat conductivility slightly descends.
Embodiment
High-thermal conductivity electronic packaging material is by strengthening body, pure copper powder and the 3rd constituent element promptly, chromium or molybdenum or silicon or titanium or tungsten formation.At first evenly mix by pre-designed proportioning, use hydrogen reducing in the reduction furnace, 1～5 hour time, 200～400 ℃ of temperature in the graphite jig of then mixed-powder being packed into, adopt discharge plasma sintering process to prepare high-thermal conductivity electronic packaging material.
Described enhancing body is diamond particles or diamond particles and the mixing of silicon-carbide particle, shared volume fraction 25%～80% in material.Diamond particle size 7～500 μ m wherein, shared volume fraction is 25%～80% in material; Silicon-carbide particle size 1～120 μ m, shared volume fraction is 0%～50% in material.
Diamond particles and silicon-carbide particle are not plating particle or copper-plated particle in the mixing of described diamond particles or diamond particles and silicon-carbide particle.
Described discharge plasma sintering process: vacuumize, programming rate with 50～200 ℃/min is heated to 700～1100 ℃ again, and the 20～50MPa that pressurizes, and is incubated 1～20 minute after reaching sintering temperature, take out the demoulding with stove cooling back, make high-thermal conductivity electronic packaging material.
Embodiment 1:
Raw material: the diamond particles of particle diameter 140 μ m, the silicon-carbide particle of particle diameter 30 μ m, pure copper powder, molybdenum powder volume ratio are 25: 25: 47: 3.
The powder of said ratio is mixed, put into reduction furnace and use hydrogen reducing 2 hours, after 200 ℃ of the temperature, pack in the graphite jig, carry out discharge plasma sintering, technology is: the programming rate with 50 ℃/min is heated to 700 ℃, and pressurization 50MPa, be incubated 3 minutes after reaching sintering temperature, take out the demoulding with stove cooling back.The thermal conductivity of gained material is 370W/mK, thermal coefficient of expansion 8.2 * 10
-6/ K.
Embodiment 2:
Raw material: the diamond particles of particle diameter 320 μ m, pure copper powder, molybdenum powder volume ratio are 50: 48: 2.
The powder of said ratio is mixed, put into reduction furnace and use hydrogen reducing 1 hour, after 300 ℃ of the temperature, pack in the graphite jig, carry out discharge plasma sintering, technology is: the programming rate with 200 ℃/min is heated to 1100 ℃, and pressurization 30MPa, be incubated 10 minutes after reaching sintering temperature, take out the demoulding with stove cooling back.The thermal conductivity of gained material is 550W/mK, thermal coefficient of expansion 6.7 * 10
-6/ K.
Embodiment 3:
Raw material: the diamond particles of particle diameter 20 μ m, pure copper powder, tungsten powder volume ratio are 60: 30: 10.
The powder of said ratio is mixed, put into reduction furnace and use hydrogen reducing 5 hours, after 400 ℃ of the temperature, pack in the graphite jig, carry out discharge plasma sintering, technology is: the programming rate with 80 ℃/min is heated to 950 ℃, and pressurization 35MPa, be incubated 1 minute after reaching sintering temperature, take out the demoulding with stove cooling back.The thermal conductivity of gained material is 480W/mK, thermal coefficient of expansion 5.8 * 10
-6/ K.
Embodiment 4:
Raw material: copper facing diamond particles, pure copper powder, the tungsten powder volume ratio of particle diameter 75 μ m are 80: 19.5: 0.5.
The powder of said ratio is mixed, put into reduction furnace and use hydrogen reducing 3 hours, after 300 ℃ of the temperature, pack in the graphite jig, carry out discharge plasma sintering, technology is: the programming rate with 75 ℃/min is heated to 1100 ℃, and pressurization 45MPa, be incubated 15 minutes after reaching sintering temperature, take out the demoulding with stove cooling back.The thermal conductivity of gained material is 760W/mK, thermal coefficient of expansion 4.7 * 10
-6/ K.
Embodiment 5:
Raw material: the diamond particles of particle diameter 120 μ m, pure copper powder, molybdenum powder volume ratio are 55: 43: 2.
The powder of said ratio is mixed, put into reduction furnace and use hydrogen reducing 4 hours, after 250 ℃ of the temperature, pack in the graphite jig, carry out discharge plasma sintering, technology is: the programming rate with 100 ℃/min is heated to 900 ℃, and pressurization 20MPa, be incubated 5 minutes after reaching sintering temperature, take out the demoulding with stove cooling back.The thermal conductivity of gained material is 530 W/mK, thermal coefficient of expansion 6.8 * 10
-6/ K.
Embodiment 6:
Raw material: the copper facing diamond particles of particle diameter 80 μ m, the copper-plated silicon carbide particle of particle diameter 30 μ m, pure copper powder, molybdenum powder volume ratio are 60: 20: 19.5: 0.5.
The powder of said ratio is mixed, put into reduction furnace and use hydrogen reducing 2 hours, after 200 ℃ of the temperature, pack in the graphite jig, carry out discharge plasma sintering, technology is: the programming rate with 200 ℃/min is heated to 950 ℃, and pressurization 30MPa, be incubated 10 minutes after reaching sintering temperature, take out the demoulding with stove cooling back.The thermal conductivity of gained material is 610W/mK, thermal coefficient of expansion 5.6 * 10
-6/ K.
Embodiment 7:
Raw material: the diamond particles of particle diameter 7 μ m, pure copper powder, chromium powder volume ratio are 40: 58: 2.
The powder of said ratio is mixed, put into reduction furnace and use hydrogen reducing 2 hours, after 350 ℃ of the temperature, pack in the graphite jig, carry out discharge plasma sintering, technology is: the programming rate with 120 ℃/min is heated to 870 ℃, and pressurization 20MPa, be incubated 8 minutes after reaching sintering temperature, take out the demoulding with stove cooling back.The thermal conductivity of gained material is 440W/mK, thermal coefficient of expansion 9.8 * 10
-6/ K.
Embodiment 8:
Raw material: the diamond particles of particle diameter 40 μ m, the copper-plated silicon carbide particle of particle diameter 120 μ m, pure copper powder, titanium valve volume ratio are 25: 50: 24: 1.
The powder of said ratio is mixed, put into reduction furnace and use hydrogen reducing 4 hours, after 400 ℃ of the temperature, pack in the graphite jig, carry out discharge plasma sintering, technology is: the programming rate with 200 ℃/min is heated to 750 ℃, and pressurization 35MPa, be incubated 10 minutes after reaching sintering temperature, take out the demoulding with stove cooling back.The thermal conductivity of gained material is 350W/mK, thermal coefficient of expansion 6.6 * 10
-6/ K.
Embodiment 9:
Raw material: the diamond particles of particle diameter 500 μ m, pure copper powder, silica flour volume ratio are 42: 54: 4.
The powder of said ratio is mixed, put into reduction furnace and use hydrogen reducing 2 hours, after 200 ℃ of the temperature, pack in the graphite jig, carry out discharge plasma sintering, technology is: the programming rate with 150 ℃/min is heated to 1000 ℃, and pressurization 25MPa, be incubated 20 minutes after reaching sintering temperature, take out the demoulding with stove cooling back.The thermal conductivity of gained material is 580W/mK, thermal coefficient of expansion 8.9 * 10
-6/ K.
Embodiment 10:
Raw material: the diamond particles of particle diameter 220 μ m, pure copper powder, molybdenum powder volume ratio are 25: 74: 1.
The powder of said ratio is mixed, put into reduction furnace and use hydrogen reducing 3.5 hours, after 300 ℃ of the temperature, pack in the graphite jig, carry out discharge plasma sintering, technology is: the programming rate with 200 ℃/min is heated to 800 ℃, and pressurization 30MPa, be incubated 15 minutes after reaching sintering temperature, take out the demoulding with stove cooling back.The thermal conductivity of gained material is 420W/mK, thermal coefficient of expansion 12 * 10
-6/ K.
Embodiment 11:
Raw material: the diamond particles of particle diameter 110 μ m, the silicon-carbide particle of particle diameter 1 μ m, pure copper powder, chromium powder volume ratio are 45: 15: 39.99: 0.01.
The powder of said ratio is mixed, put into reduction furnace and use hydrogen reducing 2.5 hours, after 350 ℃ of the temperature, pack in the graphite jig, carry out discharge plasma sintering, technology is: the programming rate with 100 ℃/min is heated to 1000 ℃, and pressurization 50MPa, be incubated 5 minutes after reaching sintering temperature, take out the demoulding with stove cooling back.The thermal conductivity of gained material is 490W/mK, thermal coefficient of expansion 6.3 * 10
-6/ K.
Claims (4)
1. high-thermal conductivity electronic packaging material, it is characterized in that: encapsulating material comprises that the enhancing body, pure copper powder and the 3rd constituent element that contain the diamond particles composition are, chromium or molybdenum or silicon or titanium or tungsten constitute, wherein, strengthening body shared volume fraction in material is the shared volume fraction 0.01%～10% of the 25%～80%, the 3rd constituent element.
2. according to the described a kind of high-thermal conductivity electronic packaging material of claim 1, it is characterized in that: described enhancing body is diamond particles or diamond particles and the mixing of silicon-carbide particle; Wherein, strengthen diamond particle size 7～500 μ m in the body, silicon-carbide particle size 1～120 μ m, diamond shared volume fraction 25%～80% in encapsulating material, carborundum shared volume fraction 0%～50% in encapsulating material.
3. according to the described a kind of high-thermal conductivity electronic packaging material of claim 1, it is characterized in that: described diamond particles and silicon-carbide particle are not plating particle or copper-plated particle.
4. the preparation method of a high-thermal conductivity electronic packaging material is characterized in that: will strengthen body, pure copper powder, the 3rd constituent element and evenly mix by proportioning, and use hydrogen reducing in reduction furnace, 1～5 hour time, 200～400 ℃ of temperature; Then mixed-powder is packed in the graphite jig, adopt discharge plasma sintering process: vacuumize, the programming rate with 50～200 ℃/min is heated to 700～1100 ℃ again, and the 20～50MPa that pressurizes, be incubated 1～20 minute after reaching sintering temperature, take out the demoulding with stove cooling back.
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Cited By (9)
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| CN102108458A (en) * | 2010-12-13 | 2011-06-29 | 中国航空工业集团公司北京航空材料研究院 | Diamond/copper high-thermal conductivity composite material and preparation method thereof |
| CN102383014A (en) * | 2011-11-11 | 2012-03-21 | 华中科技大学 | Method for preparing diamond-copper composite material by virtue of metallization of high-temperature blending surface |
| CN102407335A (en) * | 2011-12-02 | 2012-04-11 | 华南师范大学 | High heat conductivity LED packaging material and preparation method thereof |
| CN103627939A (en) * | 2013-11-26 | 2014-03-12 | 武汉理工大学 | Novel ternary thermal composite material and preparation method thereof |
| EP2796579A1 (en) * | 2013-04-26 | 2014-10-29 | Fuji Die Co., Ltd. | Cu-diamond based solid phase sintered body having excellent heat resistance, heat sink using the same, electronic device using the heat sink, and method for producing Cu-diamond based solid phase sintered body |
| CN104152740A (en) * | 2014-08-12 | 2014-11-19 | 铜陵国鑫光源技术开发有限公司 | LED packaging material containing mica powder and preparing method thereof |
| CN104475731A (en) * | 2014-12-16 | 2015-04-01 | 深圳市东维丰电子科技股份有限公司 | Reinforced copper/diamond composite heat dissipating material and preparation method thereof |
| CN105506345A (en) * | 2015-12-15 | 2016-04-20 | 北京有色金属与稀土应用研究所 | Diamond/copper composite packaging material high in thermal conductivity and preparation method thereof |
| CN108300925A (en) * | 2017-12-27 | 2018-07-20 | 柳州璞智科技有限公司 | A kind of METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING and preparation method thereof |
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| JPH066769B2 (en) * | 1987-07-10 | 1994-01-26 | 工業技術院長 | Diamond sintered body and its manufacturing method |
| AT7522U1 (en) * | 2004-04-29 | 2005-04-25 | Plansee Ag | HEAT SINKS FROM BORN DIAMOND-COPPER COMPOSITE |
| CN1944698A (en) * | 2006-10-24 | 2007-04-11 | 北京科技大学 | Super high heat conduction, low heat expansion coefficient composite material and its preparing method |
| CN101139515B (en) * | 2007-05-18 | 2010-08-18 | 中南大学 | High heat-conductive diamond-copper composite encapsulating material and method for making same |
| CN101168807B (en) * | 2007-12-06 | 2010-06-30 | 北京有色金属研究总院 | High heat conductivity copper-base composite material and preparation method thereof |
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2009
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| CN102108458A (en) * | 2010-12-13 | 2011-06-29 | 中国航空工业集团公司北京航空材料研究院 | Diamond/copper high-thermal conductivity composite material and preparation method thereof |
| CN102108458B (en) * | 2010-12-13 | 2013-02-20 | 中国航空工业集团公司北京航空材料研究院 | Preparation method of diamond/copper high-thermal conductivity composite material |
| CN102383014A (en) * | 2011-11-11 | 2012-03-21 | 华中科技大学 | Method for preparing diamond-copper composite material by virtue of metallization of high-temperature blending surface |
| CN102407335A (en) * | 2011-12-02 | 2012-04-11 | 华南师范大学 | High heat conductivity LED packaging material and preparation method thereof |
| CN102407335B (en) * | 2011-12-02 | 2013-08-14 | 华南师范大学 | High heat conductivity LED packaging material and preparation method thereof |
| EP2796579A1 (en) * | 2013-04-26 | 2014-10-29 | Fuji Die Co., Ltd. | Cu-diamond based solid phase sintered body having excellent heat resistance, heat sink using the same, electronic device using the heat sink, and method for producing Cu-diamond based solid phase sintered body |
| CN104120297A (en) * | 2013-04-26 | 2014-10-29 | 富士模具株式会社 | Cu-diamond based solid phase sintered body having excellent heat resistance, heat sink using the same, electronic device using the heat sink, and method for producing Cu-diamond based solid phase sintered body |
| TWI549925B (en) * | 2013-04-26 | 2016-09-21 | 富士拉模股份有限公司 | Cu-diamond based solid phase sintered body having excellent heat resistance and method of manufacturing the same, heat sink using the same, and electronic device |
| CN103627939A (en) * | 2013-11-26 | 2014-03-12 | 武汉理工大学 | Novel ternary thermal composite material and preparation method thereof |
| CN104152740A (en) * | 2014-08-12 | 2014-11-19 | 铜陵国鑫光源技术开发有限公司 | LED packaging material containing mica powder and preparing method thereof |
| CN104475731A (en) * | 2014-12-16 | 2015-04-01 | 深圳市东维丰电子科技股份有限公司 | Reinforced copper/diamond composite heat dissipating material and preparation method thereof |
| CN105506345A (en) * | 2015-12-15 | 2016-04-20 | 北京有色金属与稀土应用研究所 | Diamond/copper composite packaging material high in thermal conductivity and preparation method thereof |
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