CN110423922A - A kind of silico-aluminum and its preparation method and application for Electronic Packaging - Google Patents
A kind of silico-aluminum and its preparation method and application for Electronic Packaging Download PDFInfo
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- CN110423922A CN110423922A CN201910788476.9A CN201910788476A CN110423922A CN 110423922 A CN110423922 A CN 110423922A CN 201910788476 A CN201910788476 A CN 201910788476A CN 110423922 A CN110423922 A CN 110423922A
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- silico
- aluminum
- powder
- electronic packaging
- sintering
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Classifications
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/05—Mixtures of metal powder with non-metallic powder
- C22C1/051—Making hard metals based on borides, carbides, nitrides, oxides or silicides; Preparation of the powder mixture used as the starting material therefor
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
- C22C21/02—Alloys based on aluminium with silicon as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
- C22C29/18—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on silicides
Abstract
The silico-aluminum and its preparation method and application that the invention discloses a kind of for Electronic Packaging, according to mass percent, consisting of: 50~75% Si, 20~50% Al, 0~5% graphite.The silico-aluminum is prepared using mechanical alloying method and plasma hot pressing sintering method.The performance parameter of silico-aluminum of the invention is controllable, and thermal expansion coefficient is 6.1~8.7 × 10‑6K‑1, thermal conductivity is 131~168W (mK)‑1, density is 2.42~2.45 × 103kg·m‑3.It can be widely used for the encapsulating material of telecommunications, aerospace and other related industries electronic devices.
Description
Technical field
The invention belongs to technical field of alloy, are related to a kind of encapsulating material, and in particular to a kind of Si-Al electronic package material
And preparation method thereof.
Background technique
A component part as microcircuit is encapsulated, circuit supporting, sealing, inside and outside electrical connection, heat dissipation and shielding are played
The effects of, there is great influence to the Performance And Reliability of circuit.Today of microelectric technique high speed development, the collection of chip (IC)
The packing density of Cheng Du, frequency and microcircuit are continuously improved, and circuit weight and volume mesh benefit tends to be miniaturized, therefore to electronics
Encapsulating material is put forward new requirements.Encapsulating material of new generation must have the heat close with semiconductor materials such as Si and GaAs swollen
Swollen coefficient, while should also have that intensity is high, density is small, thermal conductivity is good and the characteristics such as low cost, but existing encapsulating material
None is able to satisfy all these requirements.Due to the swift and violent increase of integrated circuit integrated level, chip calorific value is caused to steeply rise, core
The decline of piece service life.It is reported that temperature is every to increase 10 DEG C, the failure that GaAs or Si semiconductor chip is generated by the shortening in service life is just
It is original three times.This is by microelectronic integrated circuit and high-power rectifying device, heat dissipation performance is bad between material
Caused by heat fatigue and thermal expansion coefficient mismatch and the thermal stress that generates caused by, solve the problems, such as this important means
Exactly using the new better encapsulating material of performance and improve packaging technology.Encapsulating material rise support and protection semiconductor chip and
Electronic circuit effect, and assist the effect that heat is generated in lost circuit work.Thermal expansion coefficient, heating conduction and specific gravity are
Develop the three basic elements that hyundai electronics encapsulating material must be taken into consideration.
Ideal encapsulating material should have to match or slightly higher thermal expansion with typical semiconductors materials such as GaAs and silicon
Coefficient (7~13 × 10-6/ K), high pyroconductivity (>=100W/ (mK)) and low-density (≤3g/cm3).In addition, package material
Material should also have reasonable intensity (> 130MPa), and enough mechanical branch can be provided for component, the substrate of mechanism sensitivity
Support.In addition, material should also be easy to carry out Precision Machining forming.
Si-A1 alloy density small (< 3g/cm3), thermal expansion coefficient are low, are designed by reasonable ingredient, can get a kind of new
The high Si of type (50%~75%, mass fraction) Si-Al alloy.
Summary of the invention
The silico-aluminum and preparation method thereof that it is an object of that present invention to provide a kind of for Electronic Packaging, passes through mechanical alloy
Alloy powder is cured as block materials by powder metallurgy, while using plasma hot pressing sintering method by change method, reaches promotion material
Expect the purpose of performance.
To achieve the above object, the technical solution adopted by the present invention are as follows:
A kind of silico-aluminum for Electronic Packaging, according to mass percent, consisting of: 50~75% Si, 20~
50% Al, 0~5% graphite.
The performance parameter of the silico-aluminum is controllable, and thermal expansion coefficient is 6.1~8.7 × 10-6K-1, thermal conductivity 131
~168W (mK)-1, density is 2.42~2.45 × 103kg·m-3。
A kind of preparation method of the silico-aluminum for Electronic Packaging, comprising the following steps:
(1) according to each group distribution ratio of silico-aluminum, silico-aluminum powder, silicon powder and graphite powder are weighed respectively, and mix
Uniformly；
(2) powder for being mixed to get step (1) seals in goal grinding jar under vacuum environment or inert gas environment, In
Ball milling in ball mill makes alloy powder alloying, obtains alloy powder；
(3) alloy powder that step (2) obtains is placed in plasma hot-pressed sintering furnace, is sintered solidification, obtain block
Body alloy.
In the step (2), revolving speed when ball milling is 200~400r/min, and Ball-milling Time is 30~50h.
In the step (3), sintering curing includes quick densifying, densification deceleration, approach final density three phases.
In the step (3), the step of sintering curing are as follows:
A) the quick densifying stage: inserting graphite jig for alloy powder, be placed in plasma hot-pressed sintering furnace, with 50~
The speed of 150 DEG C/min is heated to 520~540 DEG C, keeps the temperature 5~10min, and sintering pressure is 20~40MPa；
B) it densifies the decelerating phase: being heated to 750~800 DEG C with the speed of 50~150 DEG C/min, keep the temperature 5~10min,
Sintering pressure is 20~40MPa；
C) it approaches the final density stage: being cooled to 520~540 DEG C with the speed of 50~150 DEG C/min, heat preservation 5~
10min, sintering pressure are 20~40MPa；Room temperature is cooled to the furnace after the completion of sintering, obtains cured block alloy.
Silico-aluminum for Electronic Packaging of the invention can as encapsulating material for telecommunications, aerospace,
And the encapsulation of other related industries electronic devices.
The present invention passes through mechanical alloying method for powder metallurgy, while using plasma hot pressing sintering method by alloy powder
Block materials are cured as, achieve the purpose that promote material property.Alloy powder includes three kinds of ingredients altogether, and Si is typical semiconductor material
Material, Al density is low and has higher thermal conductivity, and graphite has excellent electric conductivity and good stability.Wherein hot pressing can
To be roughly divided into three phases:
(1) the quick densifying stage:
Hot pressed sintering initial stage, pressure gradually increase, and are plastically deformed between each particle, relative displacement occurs each other,
The biggish particle in part is crushed under pressure, and the process is similar with cold pressing, particle re-arrangement occurs, to keep consistency rapid
It is promoted.The stage depends primarily on the granularity size and grain shape of powder.In addition, the fracture of material and yield strength are to fast
Fast densification stage also plays an important role.
(2) decelerating phase is densified:
It is Plastic Flow that this stage, which mainly cashes, and sintered body consistency Slow lifting gradually tends to steady.The stage with
The closed pore contraction process for being sintered the later period is similar, and sintered body void reduces, and fades away, until partially isolated small gap is difficult to
It eliminates, consistency is up to 85%.
(3) the final density stage is approached:
At this point, become main process to spread the spiral shell of control, portion crystal is grown up so that entire composite material in material
Densification rate reduces rapidly, and after the maximal density for reaching hot press period, the hot-pressing densification process of composite material terminates.
The utility model has the advantages that the present invention passes through mechanical alloying method for powder metallurgy, while using plasma hot pressing sintering method
Alloy powder is cured as block materials, achievees the purpose that promote material property.Silicon aluminum alloy material density of the invention is small, heat
Conductivity is high, and thermal expansion coefficient is close with semiconductor material Si and GaAs, can satisfy the requirement of modern encapsulation technology.Use powder
Si is evenly distributed in the material of metallurgy method preparation, is less prone to segregation.Powder metallurgy is as a kind of new material technology of preparing, energy
Enough under the premise of not changing material composition, the service performance of material is increased substantially.
Detailed description of the invention
Fig. 1 is the microstructure of Si-A1- graphite alloy, wherein Si, Al, graphite mass percent be respectively 65%,
30%, 5%.
Specific embodiment
A kind of silico-aluminum for Electronic Packaging of the invention, according to mass percent, consisting of: 50~75%
Si, 20~50% Al, 0~5% graphite.
A kind of preparation method of silico-aluminum for Electronic Packaging of the invention, comprising the following steps:
(1) according to each group distribution ratio of silico-aluminum, silico-aluminum powder, silicon powder and graphite powder are weighed respectively, and mix
Uniformly；
(2) powder for being mixed to get step (1) seals in goal grinding jar under vacuum environment or inert gas environment, In
Make alloy powder alloying for 200~400r/min ball milling, 30~50h with revolving speed in ball mill, obtain alloy powder；
(3) alloy powder that step (2) obtains is placed in plasma hot-pressed sintering furnace, carries out quick densifying, densification
Change the sintering curing for the final density three phases that slow down, approach:
A) the quick densifying stage: inserting graphite jig for alloy powder, be placed in plasma hot-pressed sintering furnace, with 50~
The speed of 150 DEG C/min is heated to 520~540 DEG C, keeps the temperature 5~10min, and sintering pressure is 20~40MPa；
B) it densifies the decelerating phase: being heated to 750~800 DEG C with the speed of 50~150 DEG C/min, keep the temperature 5~10min,
Sintering pressure is 20~40MPa；
C) it approaches the final density stage: being cooled to 520~540 DEG C with the speed of 50~150 DEG C/min, heat preservation 5~
10min, sintering pressure are 20~40MPa；Room temperature is cooled to the furnace after the completion of sintering, obtains cured block alloy.
The present invention will be further described combined with specific embodiments below.
Embodiment 1
A kind of silico-aluminum for Electronic Packaging, according to mass percentage composition are as follows: 50% Si, 50% Al.
Mass content is used to be formulated for silico-aluminum powder, the silicon powder of 50% silicon Si-50%Al, the purity of the above raw material is
99.9%.
Using mechanical alloying method and plasma hot pressing sintering method by its alloying, homogenization, and it is cured as block alloy.
Specific step is as follows:
(1) silico-aluminum powder, silicon powder are weighed respectively according to mass percent, is uniformly mixed；
(2) raw material is placed in vacuum glove box, powder-tight is scored grinding jar in an inert atmosphere, guarantee oxygen
It forces down in 10-1Then Pa realizes alloying using planetary ball mill with the revolving speed ball milling 30h of 350r/min, after the completion of ball milling
Take out powder kept dry.
(3) powder for obtaining step 2 inserts graphite jig, plasma hot-pressed sintering furnace is put into, with the speed of 100 DEG C/min
Degree is heated to 540 DEG C, keeps the temperature 5min, sintering pressure 30MPa；800 DEG C are heated to the speed of 100 DEG C/min, keeps the temperature 5min,
Sintering pressure is 30MPa；540 DEG C are cooled to the speed of 100 DEG C/min, keeps the temperature 5min, sintering pressure 30MPa.It has been sintered
It cools to room temperature with the furnace after, obtains cured block alloy.
Embodiment 2
A kind of silico-aluminum for Electronic Packaging, according to mass percentage composition are as follows: 65% silicon Si, 32% aluminium Al,
3% graphite.Use mass content for silico-aluminum powder, silicon powder and the graphite powder of 50% silicon Si-50%Al be raw material prepare and
At the purity of the above raw material is 99.9%.
Using mechanical alloying method and plasma hot pressing sintering method by its alloying, homogenization, and it is cured as block alloy.
Specific step is as follows:
(1) silico-aluminum powder, silicon powder and graphite powder are weighed respectively according to mass percent, is uniformly mixed；
(2) raw material is placed in vacuum glove box, powder-tight is scored grinding jar in an inert atmosphere, guarantee oxygen
It forces down in 10-1Then Pa realizes alloying using planetary ball mill with the revolving speed ball milling 40h of 400r/min, after the completion of ball milling
Take out powder kept dry.
(3) powder for obtaining step 2 inserts graphite jig, plasma hot-pressed sintering furnace is put into, with the speed of 150 DEG C/min
Degree is heated to 520 DEG C, keeps the temperature 10min, sintering pressure 20MPa；780 DEG C are heated to the speed of 150 DEG C/min, heat preservation
10min, sintering pressure 20MPa；520 DEG C are cooled to the speed of 150 DEG C/min, keeps the temperature 10min, sintering pressure 20MPa.
Room temperature is cooled to the furnace after the completion of sintering, obtains cured block alloy.
Embodiment 3
A kind of silico-aluminum for Electronic Packaging, according to mass percentage composition are as follows: 75% silicon Si, 20% aluminium Al,
5% graphite.Use mass content for silico-aluminum powder, silicon powder and the graphite powder of 50% silicon Si-50%Al be raw material prepare and
At the purity of the above raw material is 99.9%.
Using mechanical alloying method and plasma hot pressing sintering method by its alloying, homogenization, and it is cured as block alloy.
Specific step is as follows:
(1) silico-aluminum powder, silicon powder and graphite powder are weighed respectively according to mass percent, is uniformly mixed；
(2) raw material is placed in vacuum glove box, powder-tight is scored grinding jar in an inert atmosphere, guarantee oxygen
It forces down in 10-1Then Pa realizes alloying using planetary ball mill with the revolving speed ball milling 50h of 200r/min, after the completion of ball milling
Take out powder kept dry.
(3) powder for obtaining step 2 inserts graphite jig, plasma hot-pressed sintering furnace is put into, with the speed of 50 DEG C/min
Degree is heated to 530 DEG C, keeps the temperature 8min, sintering pressure 40MPa；750 DEG C are heated to the speed of 50 DEG C/min, keeps the temperature 8min,
Sintering pressure is 40MPa；530 DEG C are cooled to the speed of 50 DEG C/min, keeps the temperature 8min, sintering pressure 40MPa.Sintering is completed
After cool to room temperature with the furnace, obtain cured block alloy.
Technological parameter in embodiment 1-3 can use corresponding technological parameter according to the difference of alloy species.
Mechanical experimental results are shown in Table 1；
The comparison of 1 embodiment 1-3 mechanical property of table
The above is only a preferred embodiment of the present invention, it should be pointed out that: for the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (7)
1. a kind of silico-aluminum for Electronic Packaging, it is characterised in that: according to mass percent, consisting of: 50~75%
Si, 20~50% Al, 0~5% graphite.
2. the silico-aluminum according to claim 1 for Electronic Packaging, it is characterised in that: the performance of the silico-aluminum
Parameter is controllable, and thermal expansion coefficient is 6.1~8.7 × 10-6K-1, thermal conductivity is 131~168W (mK)-1, density 2.42
~2.45 × 103kg·m-3。
3. a kind of preparation method of the silico-aluminum of any of claims 1 or 2 for Electronic Packaging, it is characterised in that: including
Following steps:
(1) according to each group distribution ratio of silico-aluminum, silico-aluminum powder, silicon powder and graphite powder are weighed respectively, and be uniformly mixed；
(2) powder for being mixed to get step (1) seals in goal grinding jar under vacuum environment or inert gas environment, in ball milling
Ball milling in machine makes alloy powder alloying, obtains alloy powder；
(3) alloy powder that step (2) obtains is placed in plasma hot-pressed sintering furnace, is sintered solidification, obtained block and close
Gold.
4. the preparation method of the silico-aluminum according to claim 3 for Electronic Packaging, it is characterised in that: the step
(2) in, revolving speed when ball milling is 200~400r/min, and Ball-milling Time is 30~50h.
5. the preparation method of the silico-aluminum according to claim 3 for Electronic Packaging, it is characterised in that: the step
(3) in, sintering curing includes quick densifying, densification deceleration, approach final density three phases.
6. the preparation method according to claim 3 or 5 for the silico-aluminum of Electronic Packaging, it is characterised in that: described
In step (3), the step of sintering curing are as follows:
A) the quick densifying stage: alloy powder is inserted into graphite jig, is placed in plasma hot-pressed sintering furnace, with 50~150
DEG C/speed of min is heated to 520~540 DEG C, 5~10min is kept the temperature, sintering pressure is 20~40MPa；
B) it densifies the decelerating phase: being heated to 750~800 DEG C with the speed of 50~150 DEG C/min, keep the temperature 5~10min, sintering
Pressure is 20~40MPa；
C) it approaches the final density stage: being cooled to 520~540 DEG C with the speed of 50~150 DEG C/min, keep the temperature 5~10min, burn
Knot pressure power is 20~40MPa；Room temperature is cooled to the furnace after the completion of sintering, obtains cured block alloy.
7. silico-aluminum of any of claims 1 or 2 is being used for telecommunications, aerospace and other related industries electronics devices
Application in the encapsulating material of part.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111378877A (en) * | 2020-05-08 | 2020-07-07 | 东莞理工学院 | High-silicon aluminum electronic packaging material and preparation method thereof |
| CN111636006A (en) * | 2020-05-29 | 2020-09-08 | 香港生产力促进局 | Aluminum-silicon alloy graphite composite heat conduction material and preparation and application thereof |
| CN112030027A (en) * | 2020-09-02 | 2020-12-04 | 宁波乌卡科技有限公司 | Preparation method of multifunctional induction aluminum alloy manipulator material |
| WO2021169073A1 (en) * | 2020-02-28 | 2021-09-02 | 深圳市新星轻合金材料股份有限公司 | Silicon-aluminum alloy and preparation method therefor |
| CN114134373A (en) * | 2021-11-16 | 2022-03-04 | 哈尔滨铸鼎工大新材料科技有限公司 | Silicon-aluminum alloy packaging material with high tensile strength and preparation method thereof |
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