CN111378877A - High-silicon aluminum electronic packaging material and preparation method thereof - Google Patents
High-silicon aluminum electronic packaging material and preparation method thereof Download PDFInfo
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- CN111378877A CN111378877A CN202010390216.9A CN202010390216A CN111378877A CN 111378877 A CN111378877 A CN 111378877A CN 202010390216 A CN202010390216 A CN 202010390216A CN 111378877 A CN111378877 A CN 111378877A
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
- C22C21/02—Alloys based on aluminium with silicon as the next major constituent
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/05—Mixtures of metal powder with non-metallic powder
Abstract
The preparation method provided by the invention is simple to operate and low in energy consumption, and the high-silicon aluminum electronic packaging material with high density, high thermal conductivity and low thermal expansion coefficient can be obtained by discharge plasma sintering without prepressing, and is suitable for industrial production‑6℃‑1The thermal conductivity is 116 to 140W/m.K, and the density is 2.41 to 2.47g/cm3The grain size is 5 to 18 μm.
Description
Technical Field
The invention belongs to the technical field of electronic packaging materials, and particularly relates to a high-silicon aluminum electronic packaging material and a preparation method thereof.
Background
With the rapid development of modern electronic information technology, electronic systems and devices are developed toward large-scale integration, miniaturization, high efficiency and high reliability. Electronic packaging is driving the development of information-oriented society together with electronic design and manufacturing. Due to the increasing complexity and density of components in electronic devices and electronic apparatuses, there is an urgent need to research and develop new electronic packaging materials having excellent properties and capable of satisfying various demands.
Chinese patent CN109487130 discloses an aluminum-silicon composite material for electronic packaging and a preparation method thereof, and the process comprises the steps of mixing pure aluminum powder and pure silicon powder in proportion to obtain a mixture with the mass ratio of aluminum to silicon being 50-30: 50-70; then the mixture is put into an aluminum sheath, and is placed in a preheated mold to be pressed at 800MPa to 1100MPa, the vacuum degree is less than or equal to 10-1Pa, heating to 750-1000 ℃ at the rate of 1-5 ℃/min, and preserving heat for 1-4 h to obtain the aluminum-silicon composite material for electronic packaging, wherein the density is not less than 95%, the thermal conductivity is 100-128W/m.K, and the thermal expansion coefficient is 9.3-12.5 × 10-6℃-1. The porosity can be reduced and the tissue density can be improved by adopting the hot-pressing sintering under the vacuum condition. However, the above method requires pre-pressing, two-step operation, complicated process, high energy consumption, and relatively large thermal expansion coefficient of the material, and is easily limited in many applications.
Disclosure of Invention
In view of this, the present invention aims to provide a high silicon aluminum electronic packaging material and a preparation method thereof. The preparation method provided by the invention is simple and low in energy consumption.
In order to achieve the above purpose, the invention provides the following technical scheme:
the invention provides a preparation method of a high-silicon aluminum electronic packaging material, which comprises the following steps:
mixing Al powder and Si powder, and performing discharge plasma sintering under a vacuum condition to obtain a high-silicon aluminum electronic packaging material;
the temperature rise process of the spark plasma sintering comprises the following steps: heating to an intermediate temperature at a first heating rate, and heating to a sintering temperature from the intermediate temperature at a second heating rate;
the first heating rate is 30-100 ℃/min, and the intermediate temperature is 420-620 ℃; the second heating rate is 5-30 ℃/min, the sintering temperature is 450-650 ℃, and the heat preservation time is 0.5-2 h; the intermediate temperature is lower than the sintering temperature;
in the processes of heating and heat preservation, the pressure is 10-60 MPa/min.
Preferably, the mass ratio of the Al powder to the Si powder is (5-8): (5-2).
Preferably, the Al powder has a median particle diameter of 10 to 20 μm.
Preferably, the Si powder has a median particle diameter of 1 to 10 μm.
Preferably, the purity of the Al powder is more than or equal to 99.6 percent.
Preferably, the purity of the Si powder is more than or equal to 99.6 percent.
Preferably, the vacuum degree under the vacuum condition is 5-15 Pa.
Preferably, the mixing is performed by ball milling; the ball-material ratio of the ball milling is 5: 1-15: 1; the rotating speed of the ball milling is 200-300 r/min.
The invention also provides the high-silicon aluminum electronic packaging material prepared by the preparation method of the technical scheme, and the density of the high-silicon aluminum electronic packaging material is 2.3-2.6 g/cm3The relative density is more than or equal to 98.5 percent, the distributed hardness is 150-230 HB, and the thermal expansion coefficient is 5.5-10.5 × 10-6℃-1The thermal conductivity is 110 to 150W/m.K.
The preparation method provided by the invention comprises the following steps: mixing Al powder and Si powder, heating to a sintering temperature under a vacuum condition, preserving heat, and performing discharge plasma sintering to obtain a high-silicon aluminum electronic packaging material;the temperature rise process of the spark plasma sintering comprises the following steps: heating to an intermediate temperature at a first heating rate, and heating to a sintering temperature from the intermediate temperature at a second heating rate; the first heating rate is 30-100 ℃/min, and the intermediate temperature is 420-620 ℃; the second heating rate is 5-30 ℃/min, the sintering temperature is 450-650 ℃, and the heat preservation time is 0.5-2 h; in the processes of heating and heat preservation, the pressure is 10-60 MPa/min. According to the invention, the high-silicon aluminum electronic packaging material is prepared by using the discharge plasma sintering method, and the mixture of the Al powder and the Si powder is applied with current, so that the mixture generates local high temperature in the discharge plasma sintering process, and part of the mixture is softened and even melted, thereby filling gaps among the mixture powder particles, removing air among the mixture powder particles, and enabling the prepared high-silicon aluminum electronic packaging material to have the characteristics of high density, high thermal conductivity and low thermal expansion coefficient. In addition, the discharge plasma sintering is carried out at a lower temperature of 420-650 ℃, and the temperature is rapidly raised to the discharge plasma sintering temperature, so that the energy consumption can be reduced, and the crystal grains of the prepared high-silicon aluminum electronic packaging material are uniform and fine; meanwhile, the pressure is applied in the sintering process, so that the temperature of spark plasma sintering is reduced, the loss is reduced, and the density of the high-silicon aluminum electronic packaging material can be improved. Therefore, the preparation method provided by the invention is simple to operate; in addition, the sintering temperature is low, prepressing is not needed, and the energy consumption is low; the high-silicon aluminum electronic packaging material with high density, high thermal conductivity and low thermal expansion coefficient can be obtained by spark plasma sintering, and is suitable for industrial production. The embodiment result shows that the density of the high-silicon aluminum electronic packaging material prepared by the invention is 2.3-2.6 g/cm3The relative density is more than or equal to 98.5 percent, the distributed hardness is 158-226 HB, and the thermal expansion coefficient is 7.278-9.634 × 10-6℃-1The thermal conductivity is 116 to 140W/m.K, and the density is 2.41 to 2.47g/cm3The grain size is 5 to 18 μm.
Drawings
FIG. 1 is a microstructure of a high silicon aluminum electronic packaging material prepared in example 1;
FIG. 2 is a graph of the grain size of the high silicon aluminum electronic packaging material prepared in example 1;
FIG. 3 is a graph of grain size of the high silicon aluminum electronic packaging material made in comparative example 1;
FIG. 4 is a microstructure of the high silicon aluminum electronic packaging material prepared in example 2;
FIG. 5 is a microstructure of the high silicon aluminum electronic packaging material prepared in example 3;
FIG. 6 is a microstructure of the high silicon aluminum electronic packaging material prepared in example 4;
FIG. 7 is a microstructure of the high silicon aluminum electronic packaging material prepared in example 5;
FIG. 8 is a microstructure of the high silica alumina electronic packaging material prepared in example 6.
Detailed Description
The invention provides a preparation method of a high-silicon aluminum electronic packaging material, which comprises the following steps:
and mixing the Al powder and the Si powder, and performing discharge plasma sintering under a vacuum condition to obtain the high-silicon aluminum electronic packaging material.
In the present invention, the raw materials used are all commercial products which are conventional in the art, unless otherwise specified.
In the present invention, the mass ratio of the Al powder to the Si powder is preferably (5 to 8): (5-2), more preferably (6-8): (4-2). In the invention, the median particle size of the Al powder is preferably 10-20 μm; the purity of the Al powder is preferably more than or equal to 99.6%. In the invention, the median particle size of the Si powder is preferably 1-10 μm; the purity of the Si powder is preferably equal to or more than 99.6%.
In the invention, the mixing mode is preferably ball milling, the ball milling medium is preferably zirconia balls, and the median particle size of the zirconia balls is preferably 1-20 mm; the ball-material ratio of the ball milling is preferably 5: 1-15: 1; the rotation speed of the ball milling is preferably 200-300 r/min; the ball milling time is preferably 2-24 h, and more preferably 12 h. In the present invention, the mixing is preferably carried out in a ball mill. In the invention, the mixing speed and mixing time can affect the quality of the mixed powder, and further affect the performance of the high-silicon aluminum electronic packaging material.
After the ball milling is finished, the obtained ball milling product is preferably placed in a graphite die and then placed in a sintering platform with a vacuum cavity for spark plasma sintering. In the invention, the sintering platform is preferably a LABOX-300 series plasma discharge high-temperature sintering furnace; the diameter of the plasma discharge high-temperature sintering furnace is preferably 90 mm.
In the present invention, the degree of vacuum under the vacuum condition is preferably 5 to 15 Pa.
In the present invention, the temperature raising process of spark plasma sintering includes: the temperature is increased to an intermediate temperature at a first temperature increasing rate, and then the temperature is increased from the intermediate temperature to a sintering temperature at a second temperature increasing rate. The invention adopts a two-section type sintering mode, and can ensure that the prepared high-silicon aluminum electronic packaging material has the characteristics of high density, high thermal conductivity and low thermal expansion coefficient.
In the invention, the first heating rate is 30-100 ℃/min, preferably 30-60 ℃/min, and more preferably 40-50 ℃/min; the intermediate temperature is 420-620 ℃, preferably 480-600 ℃/min, and more preferably 530-590 ℃/min.
In the invention, the second heating rate is 5-30 ℃/min, preferably 5-20 ℃/min, and more preferably 5-10 ℃/min; the sintering temperature is 450-650 ℃, preferably 500-620 ℃/min, and more preferably 550-600 ℃/min; the heat preservation time is 0.5-2 h, preferably 0.5-1.5 h, and more preferably 1-1.5 h. In the present invention, the intermediate temperature is lower than the sintering temperature, and the intermediate temperature is preferably 30 ℃ lower than the temperature of the sintering temperature.
In the invention, in the processes of heating and heat preservation, the pressure is 10-60 MPa/min, preferably 20-40 MPa/min.
According to the invention, the high-silicon aluminum electronic packaging material is prepared by using a discharge plasma sintering method, a current is applied to the mixture of Al powder and Si powder, so that the mixture generates local high temperature in the discharge plasma sintering process, when the temperature reaches a densification temperature point, Joule heat generated in the mixture can soften or even melt aluminum particles to form a communicated matrix, thereby filling gaps among the mixture powder particles, removing air among the mixture powder particles, and enabling the prepared high-silicon aluminum electronic packaging material to have the characteristics of high density, high thermal conductivity and low thermal expansion coefficient. In addition, the discharge plasma sintering is carried out at a lower temperature of 420-650 ℃, and the temperature is rapidly raised to the discharge plasma sintering temperature, so that the energy consumption can be reduced, and the crystal grains of the prepared high-silicon aluminum electronic packaging material are uniform and fine; meanwhile, the pressure is applied in the sintering process, so that the temperature of spark plasma sintering is reduced, the loss is reduced, and the density of the high-silicon aluminum electronic packaging material can be further improved.
The invention also provides the high-silicon aluminum electronic packaging material prepared by the preparation method of the technical scheme, and the density of the high-silicon aluminum electronic packaging material is 2.3-2.6 g/cm3The relative density is more than or equal to 98.5 percent, the distributed hardness is 150-230 HB, and the thermal expansion coefficient is 5.5-10.5 × 10-6℃-1The thermal conductivity is 110 to 150W/m.K.
The high silicon aluminum electronic packaging material and the preparation method thereof provided by the present invention are described in detail with reference to the following examples, but they should not be construed as limiting the scope of the present invention.
Example 1
Weighing Si powder (with a median particle size of 3 microns) and Al powder (with a median particle size of 18 microns) in a mass ratio of 5:5, mixing, ball-milling for 6 hours in a ball mill with a ball-milling medium of zirconia balls at a ball-to-material ratio of 5:1 and a rotation speed of 200r/min to obtain mixed powder, putting the mixed powder into a graphite mold, putting the graphite mold into a sintering platform in a vacuum cavity, and performing spark plasma sintering under the condition that the vacuum degree is 5 Pa.
The spark plasma sintering process comprises the following steps: in the first stage, after the temperature is raised to 540 ℃ at the speed of 30 ℃/min, the temperature is directly raised to 570 ℃ at the speed of 10 ℃/min, the pressure of 30MPa is applied at the pressurizing rate of 10MPa/min in the whole temperature raising process, after the sintering temperature reaches 570 ℃, the temperature is preserved for 1h, and then demoulding is carried out, so that the high-silicon aluminum electronic packaging material is prepared.
The performance of the prepared high-silicon aluminum electronic packaging material is tested, and the test results are shown in table 1.
Fig. 1 is a microstructure diagram of the high-silicon aluminum electronic packaging material prepared in example 1, and it can be seen from the diagram that the prepared high-silicon aluminum electronic packaging material has good compactness.
Comparative example 1
The comparative example adopts the traditional hot-pressing sintering method to prepare the high-silicon aluminum electronic packaging material (see the aluminum-silicon composite material for electronic packaging and the preparation method thereof disclosed in the Chinese patent CN 109487130). Weighing Si powder (with a median particle size of 20 microns) and Al powder (with a median particle size of 18 microns) in a mass ratio of 4:6, mixing to obtain mixed powder, and filling the mixed powder into a graphite mold;
preheating the mixed powder to 300 ℃, preserving heat for 10min, carrying out hot pressing on the mixed powder under 900MPa, and maintaining the pressure for 10s to obtain a hot-pressed billet;
at a vacuum degree of 10-3And (3) heating to 850 ℃ at the heating rate of 5 ℃/min in a vacuum furnace of Pa, preserving heat for 2 hours, cooling and demolding to obtain the aluminum-silicon alloy block material.
The properties of the obtained aluminum-silicon alloy block material were tested, and the test results are shown in table 1.
Fig. 2 is a graph of the grain size of the high-silicon aluminum electronic packaging material prepared in example 1, and fig. 3 is a graph of the grain size of the high-silicon aluminum electronic packaging material prepared in comparative example 1. As can be seen from the analysis in combination with FIGS. 2 to 3 and Table 1, the grain size of the electronic packaging material prepared by the method is 5 to 18 μm, and the grain size of the electronic packaging material prepared by the conventional hot-pressing sintering method is 20 to 30 μm.
Example 2
This example is different from example 1 only in that the mass ratio of Al powder to Si powder is 4: 6.
The performance of the prepared high-silicon aluminum electronic packaging material is tested, and the test results are shown in table 1.
Fig. 4 is a microstructure diagram of the high-silicon aluminum electronic packaging material prepared in example 2, and it can be seen from the diagram that the prepared high-silicon aluminum electronic packaging material has good compactness.
Example 3
This example differs from example 1 only in that the mass ratio of the Al powder (median particle diameter of 15 μm) and the Si powder (median particle diameter of 5 μm) was 7: 3; the temperature rise rate in the first stage is 40 ℃/min, the temperature rise rate in the second stage is 20 ℃/min, and the applied pressure is 30 MPa.
The performance of the prepared high-silicon aluminum electronic packaging material is tested, and the test results are shown in table 1.
Fig. 5 is a microstructure diagram of the high-silicon aluminum electronic packaging material prepared in example 3, and it can be seen from the diagram that the prepared high-silicon aluminum electronic packaging material has good compactness.
Example 4
This example differs from example 1 only in that the mass ratio of Al powder to Si powder is 6: 4; the ball milling time is 12 h; the sintering temperature in the first stage was 520 ℃ and the sintering temperature in the second stage was 550 ℃.
The performance of the prepared high-silicon aluminum electronic packaging material is tested, and the test results are shown in table 1.
Fig. 6 is a microstructure diagram of the high-silicon aluminum electronic packaging material prepared in example 4, and it can be seen from the diagram that the prepared high-silicon aluminum electronic packaging material has good compactness.
Example 5
This example differs from example 4 only in that the first stage sintering temperature was 540 ℃ and the second stage sintering temperature was 570 ℃.
The performance of the prepared high-silicon aluminum electronic packaging material is tested, and the test results are shown in table 1. Fig. 7 is a microstructure diagram of the high-silicon aluminum electronic packaging material prepared in example 5, and it can be seen from the diagram that the prepared high-silicon aluminum electronic packaging material has good compactness.
Example 6
This example differs from example 1 only in that the mass ratio of Al powder to Si powder is 8: 2; the ball milling time is 12 h.
The performance of the prepared high-silicon aluminum electronic packaging material is tested, and the test results are shown in table 1.
Fig. 8 is a microstructure diagram of the high-silicon aluminum electronic packaging material prepared in example 6, and it can be seen from the diagram that the prepared high-silicon aluminum electronic packaging material has good compactness.
TABLE 1 Properties of high-Si aluminum electronic packaging materials prepared in examples 1-6 and comparative example 1
As can be seen from the data in Table 1, the high-silicon aluminum electronic packaging material prepared by the invention has the characteristics of high density, high thermal conductivity and low thermal expansion coefficient.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (9)
1. The preparation method of the high-silicon aluminum electronic packaging material is characterized by comprising the following steps of:
mixing Al powder and Si powder, and performing discharge plasma sintering under a vacuum condition to obtain a high-silicon aluminum electronic packaging material;
the temperature rise process of the spark plasma sintering comprises the following steps: heating to an intermediate temperature at a first heating rate, and heating to a sintering temperature from the intermediate temperature at a second heating rate;
the first heating rate is 30-100 ℃/min, and the intermediate temperature is 420-620 ℃; the second heating rate is 5-30 ℃/min, the sintering temperature is 450-650 ℃, and the heat preservation time is 0.5-2 h;
in the processes of heating and heat preservation, the pressure is 10-60 MPa/min.
2. The production method according to claim 1, wherein the mass ratio of the Al powder to the Si powder is (5-8): (5-2).
3. The method according to claim 1 or 2, wherein the Al powder has a median particle diameter of 10 to 20 μm.
4. The production method according to claim 1 or 2, wherein the Si powder has a median particle diameter of 1 to 10 μm.
5. The method according to claim 1 or 2, wherein the purity of the Al powder is 99.6% or more.
6. The production method according to claim 1 or 2, wherein the purity of the Si powder is 99.6% or more.
7. The method according to claim 1, wherein the degree of vacuum is 5 to 15 Pa.
8. The method of claim 1, wherein the mixing is by ball milling; the ball-material ratio of the ball milling is 5: 1-15: 1; the rotating speed of the ball milling is 200-300 r/min.
9. The high-silicon aluminum electronic packaging material prepared by the preparation method of any one of claims 1 to 8, wherein the density of the high-silicon aluminum electronic packaging material is 2.3 to 2.6g/cm3The relative density is more than or equal to 98.5 percent, the distributed hardness is 150-230 HB, and the thermal expansion coefficient is 5.5-10.5 × 10-6℃-1The thermal conductivity is 110 to 150W/m.K.
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| CN202010390216.9A CN111378877A (en) | 2020-05-08 | 2020-05-08 | High-silicon aluminum electronic packaging material and preparation method thereof |
| AU2020102551A AU2020102551A4 (en) | 2020-05-08 | 2020-10-01 | High silicon aluminium-based electronic packaging material and preparation method thereof |
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| CN202010390216.9A CN111378877A (en) | 2020-05-08 | 2020-05-08 | High-silicon aluminum electronic packaging material and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112371986A (en) * | 2020-10-26 | 2021-02-19 | 宁夏荣华缘特种新材料有限公司 | Preparation method of high-silicon aluminum alloy electronic packaging material |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040084315A (en) * | 2003-03-27 | 2004-10-06 | 이정일 | Method for fabrication of high silicon Al-Si alloy for electronic packaging material by vacuum arc melting method |
| CN101445882A (en) * | 2008-12-26 | 2009-06-03 | 西安交通大学 | Method for preparing aluminum-silicon alloy with high silicon content |
| CN102094142A (en) * | 2010-12-22 | 2011-06-15 | 合肥工业大学 | Method for preparing high silicon-aluminum alloy electronic packaging material through rapid hot press |
| CN109487130A (en) * | 2018-12-26 | 2019-03-19 | 东莞理工学院 | A kind of Al-Si composites and preparation method thereof for Electronic Packaging |
| CN110423922A (en) * | 2019-08-26 | 2019-11-08 | 中国矿业大学 | A kind of silico-aluminum and its preparation method and application for Electronic Packaging |
-
2020
- 2020-05-08 CN CN202010390216.9A patent/CN111378877A/en active Pending
- 2020-10-01 AU AU2020102551A patent/AU2020102551A4/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040084315A (en) * | 2003-03-27 | 2004-10-06 | 이정일 | Method for fabrication of high silicon Al-Si alloy for electronic packaging material by vacuum arc melting method |
| CN101445882A (en) * | 2008-12-26 | 2009-06-03 | 西安交通大学 | Method for preparing aluminum-silicon alloy with high silicon content |
| CN102094142A (en) * | 2010-12-22 | 2011-06-15 | 合肥工业大学 | Method for preparing high silicon-aluminum alloy electronic packaging material through rapid hot press |
| CN109487130A (en) * | 2018-12-26 | 2019-03-19 | 东莞理工学院 | A kind of Al-Si composites and preparation method thereof for Electronic Packaging |
| CN110423922A (en) * | 2019-08-26 | 2019-11-08 | 中国矿业大学 | A kind of silico-aluminum and its preparation method and application for Electronic Packaging |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112371986A (en) * | 2020-10-26 | 2021-02-19 | 宁夏荣华缘特种新材料有限公司 | Preparation method of high-silicon aluminum alloy electronic packaging material |
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Application publication date: 20200707 |