CN112195354B - Forming method of SiCp/Al composite material - Google Patents

Forming method of SiCp/Al composite material Download PDF

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CN112195354B
CN112195354B CN202011084716.6A CN202011084716A CN112195354B CN 112195354 B CN112195354 B CN 112195354B CN 202011084716 A CN202011084716 A CN 202011084716A CN 112195354 B CN112195354 B CN 112195354B
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pressing
hot
sic
die
powder
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CN112195354A (en
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张文兴
许军锋
王鑫
王喜锋
李高宏
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Shaanxi Yeyan Green Pottery New Materials Co.,Ltd.
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Xian Technological University
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    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/04Making non-ferrous alloys by powder metallurgy
    • C22C1/05Mixtures of metal powder with non-metallic powder
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/04Making non-ferrous alloys by powder metallurgy
    • C22C1/05Mixtures of metal powder with non-metallic powder
    • C22C1/051Making hard metals based on borides, carbides, nitrides, oxides or silicides; Preparation of the powder mixture used as the starting material therefor
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C21/00Alloys based on aluminium
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C29/00Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
    • C22C29/02Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides
    • C22C29/06Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds
    • C22C29/065Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds based on SiC
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C29/00Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
    • C22C29/02Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides
    • C22C29/06Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds
    • C22C29/067Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds comprising a particular metallic binder
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C32/00Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/0047Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
    • C22C32/0052Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides
    • C22C32/0063Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides based on SiC

Abstract

The invention discloses a method for molding a SiCp/Al composite material, which comprises the following steps: step 1), powder mixing: mixing SiC particles and Al powder or Al alloy powder according to the volume ratio of (10-90%): (90-10%) to obtain SiC/Al powder; the diameter of the SiC particles is 14-63 mu m; the granularity of the Al powder or the Al alloy powder is 50-150 mu m; step 2) cold-press forming: putting the SiC/Al powder obtained by uniformly mixing in the step 1) into a steel mould, and pressing and forming the SiC/Al blank under the stress of 50-200 MPa; step 3), hot-pressing sintering: and (3) under the atmospheric pressure condition, putting the SiC/Al blank subjected to cold pressing forming in the step 2) into a hot pressing die, and carrying out hot pressing on the SiC/Al blank by using a press machine and a quick heater to obtain the SiCp/Al composite material after the hot pressing is finished. Solves the problems of low production efficiency, high process cost and high labor cost of the existing preparation method of the SiCp/Al composite material.

Description

Forming method of SiCp/Al composite material
Technical Field
The invention belongs to the technical field of powder metallurgy materials, and particularly relates to a method for forming a SiCp/Al composite material.
Background
With the continuous development of modern science and technology, higher and higher requirements are provided for the performance of materials, the actual needs of engineering are hardly met by common single engineering materials at present, and the compounding of materials with different characteristics is an important way for solving the problem, that is, the composite materials gradually become novel materials which cannot be replaced in the engineering field, such as large-scale integrated circuit substrates and high-power led lamp substrates. The latter mainly adopts alumina or copper, aluminium base board at present, the ceramic base board has thermal expansion performance equivalent to semiconductor chip material, but its thermal property of low heat conduction is in the modern electronic product of higher and higher power, has seriously hindered the loss of chip heat, thus has seriously influenced service life and stability of the electronic product, according to the test of the high-power led trade, the service life of the ordinary domestic lamp is only about 1-2 years, according to the design life of 10 years is very far from each other. The SiCp/Al composite material is an ideal electronic packaging substrate material due to the combination of the low expansion of ceramics and the high heat conduction characteristic of metals, is already industrially produced in batches and put into use abroad, and is basically in a small-quantity trial production stage or a small-quantity trial production stage at home.
The properties, in particular the thermal properties, of the SiCp/Al composite are determined primarily by the content of silicon carbide particles: the content of the silicon carbide is increased, so that the thermal expansion coefficient of the material is reduced, the heat-conducting property and the toughness are relatively poor, and the content of the silicon carbide can be controlled to be 10-90%; the higher the aluminum content, the higher the heat conductivity and toughness of the material, but the higher the thermal expansion coefficient. The metal matrix composite has good heat conduction and weight close to pure aluminum, and the coefficient of thermal expansion can be controlled to be 30-50% of that of aluminum so as to adapt to the requirements of different working conditions.
The silicon carbide powder has low price, wide source and excellent performance, and the thermal expansion coefficient is close to that of chip materials Si and GaAs, so the silicon carbide powder is an ideal reinforcement. Aluminum is a common and cheap metal material, has a low melting point (660 ℃), and has a low density (2.7 g/cm)3) The steel is only about one third of steel, and has great potential in improving specific strength and specific modulus. The SiCp/Al composite material not only maintains the characteristics of good toughness, electric conduction, heat transfer and the like of metal, but also has the characteristics of high temperature resistance, corrosion resistance and low thermal expansion of ceramic, meets the requirements of light weight, low cost, high strength, high modulus, corrosion resistance and wear resistance, can be applied to aerospace, automobiles, internal combustion engines, national defense and sports, optical instruments and microwave, electric power and electronic (or photoelectronic) device packaging, and plays a positive role in reducing cost and weight. The material has huge demand and wide market prospect.
The existing silicon carbide particle reinforced aluminum matrix composite (SiCp/Al) with high volume fraction is generally manufactured by adopting a liquid state process or a powder metallurgy process. The content of SiC in the material obtained by the former is often difficult to accurately control, and the dispersion uniformity of SiC is poor, so that the dispersibility of the product performance is easy to cause to be larger; the latter prior art adopts vacuum hot pressing manufacturing, and the placing of green blanks and the taking out of cooked blanks are very inconvenient due to the vacuum pumping link, thereby obviously increasing the production cycle of the product, causing low production efficiency and being not beneficial to industrial production, meanwhile, due to the use of the vacuum equipment, the equipment cost, the maintenance cost and the labor cost are greatly improved, the hot-pressing sintering is a common activation sintering mode in the powder metallurgy process, the vacuum hot-pressing sintering is generally adopted in the existing powder metallurgy preparation process of the silicon carbide particle reinforced aluminum matrix composite material with high volume fraction, although the obtained material has excellent performance, the method has the defects of low production efficiency, high process cost, high maintenance cost, high labor cost and the like, so that the method is not suitable for large-scale production, and the industrial application of preparing electronic packaging substrate products by the method is limited, especially the wide civil product field.
Disclosure of Invention
The invention aims to provide a method for forming a SiCp/Al composite material, which aims to solve the problems of low production efficiency, high process cost and high labor cost of the existing preparation method of the SiCp/Al composite material.
The invention adopts the following technical scheme: a method for forming a SiCp/Al composite material uses a SiCp/Al composite material forming apparatus, which comprises:
the hot-pressing die comprises an upper pressing head positioned at the top, an annular female die positioned in the middle and a bottom die positioned at the bottom, wherein the upper pressing head, the female die and the bottom die surround to form a hollow cavity, and the hollow cavity is used for placing a blank to be formed;
the quick heater is arranged around the outside of the hot-pressing die and used for heating and insulating the hot-pressing die;
the press machine comprises an upper working table and a lower working table which are oppositely arranged; the upper workbench is arranged above the upper pressure head, and the lower workbench is arranged at the bottom of the bottom die; the axial pressure is provided for the hot-pressing die;
the temperature measuring system comprises a thermocouple inserted into the outer wall of the female die from outside and used for reading the temperature data of the hot-pressing die and controlling the heating temperature of the rapid heater according to the temperature data;
the molding method comprises the following steps:
step 1), powder mixing: mixing SiC particles and Al powder or Al alloy powder according to the volume ratio of (10-90%): (90-10%) to obtain SiC/Al powder;
the diameter of the SiC particles is 14-63 mu m; the granularity of the Al powder or the Al alloy powder is 50-150 mu m;
step 2) cold-press forming: putting the SiC/Al powder obtained by uniformly mixing in the step 1) into a steel mould, and pressing and forming the SiC/Al blank under the stress of 50-200 MPa;
step 3), hot-pressing sintering: and (3) under the atmospheric pressure condition, putting the SiC/Al blank subjected to cold pressing forming in the step 2) into a hot pressing die, and carrying out hot pressing on the SiC/Al blank by using a press machine and a quick heater to obtain the SiCp/Al composite material after the hot pressing is finished.
Further, the hot-pressing sintering process specifically comprises the following steps:
3.1) a rapid temperature rise stage:
heating the SiC/Al subjected to cold pressing forming by using a rapid heater, raising the temperature of a hot pressing die to 450-650 ℃ within 2-4 minutes, and controlling the pressure of a press machine on the SiC/Al blank to be 5-20 MPa;
3.2) a heat preservation stage:
keeping the temperature within the range of 450-650 ℃, and preserving the temperature for 15-30 minutes;
3.3) a cooling stage:
and after the heat preservation is finished, controlling the pressure of the press machine to be 10-30 MPa, naturally cooling the hot-pressing die to 300-400 ℃, and demolding to obtain the SiCp/Al composite material.
Further, the rapid heater includes:
the high-frequency coil is spirally arranged around the outer sides of the upper pressure head, the female die and the bottom die;
a high frequency current device electrically connected to the high frequency coil, wherein the current frequency is 12000-20000 Hz.
The invention has the beneficial effects that: the rapid heater adopted by the forming method has the characteristics of high temperature rise speed and short hot pressing time; the related hot pressing pressure is only about 1/10 of the conventional hot pressing, and about 1/10 of the vacuum hot pressing process; the pressure in the cold pressing process is only 1/8 of the cold pressing pressure of the common powder metallurgy aluminum-based composite material, the feasibility of producing large-size parts is greatly improved, and the service life of a cold pressing die is greatly prolonged. The heating mode of arranging the quick heater around the circumference of the hot-pressing die ensures that the forming method is suitable for forming various types of blanks.
Drawings
FIG. 1 is a schematic structural view of a molding apparatus for a SiCp/Al composite material used in the molding method of the present invention.
The high-frequency heating device comprises an upper pressure head 1, a female die 2, a bottom die 3, a blank 4, an upper workbench 51, a lower workbench 52, a thermocouple 6, a quick heater 7, an upper heat insulation cushion block 8, a lower heat insulation cushion block 9, a high-frequency coil 71 and a high-frequency current device 72.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
The invention provides a method for forming a SiCp/Al composite material, which comprises the following steps:
step 1), powder mixing: mixing SiC particles and Al powder or Al alloy powder according to the volume ratio of (10-90%): (90-10%) to obtain SiC/Al powder;
the diameter of the SiC particles is 14-63 mu m; the granularity of the Al powder or the Al alloy powder is 50-150 mu m;
step 2) cold-press forming: putting the SiC/Al powder obtained by uniformly mixing in the step 1) into a steel mould, and pressing and forming the SiC/Al blank 4 under the stress of 50-200 MPa;
step 3), hot-pressing sintering: and (3) under the atmospheric pressure condition, putting the SiC/Al blank 4 subjected to cold pressing forming in the step 2) into a hot pressing die, and carrying out hot pressing on the SiC/Al blank by using a press machine and a quick heater 7 to obtain the sheet SiCp/Al composite material after the hot pressing is finished.
Wherein, the hot-pressing sintering process specifically comprises the following steps:
3.1) a rapid temperature rise stage:
adjusting a rapid heater 7 to heat the SiC/Al subjected to cold pressing forming, and raising the temperature of a hot pressing die to 450-650 ℃ within 2-4 minutes, wherein the pressure of a press machine on the blank 4 is 5-20 MPa;
3.2) a heat preservation stage:
keeping the temperature within the range of 450-650 ℃, and preserving the temperature for 15-30 minutes;
3.3) a cooling stage:
and after the heat preservation is finished, controlling the pressure of the press machine to be 10-30 MPa, naturally cooling the hot-pressing die by closing the rapid heater 7, and removing the pressure and demoulding when the temperature is reduced to 300-400 ℃ to obtain the SiCp/Al composite material.
As shown in fig. 1, an apparatus for forming a SiCp/Al composite material used in the present invention, in some embodiments, includes: hot pressing die, rapid heater 7, press and temperature measurement system.
Wherein the mould material of the hot-pressing mould is a material which can be heated by high-frequency current, such as graphite or non-austenitic steel or cast iron. The hot-pressing die comprises an upper pressure head 1 positioned at the top, an annular female die 2 positioned in the middle and a bottom die 3 positioned at the bottom, wherein the upper pressure head 1, the female die 2 and the bottom die 3 surround to form a sealed hollow cavity, and a blank 4 to be formed can be placed in the hollow cavity. The blank 4 may be cold-formed SiC/Al.
The rapid heater 7 is arranged outside the hot-pressing die in a surrounding mode and used for heating and preserving heat of the hot-pressing die. The press is used for providing upper and lower axial pressure for the hot-pressing die. The press comprises an upper working table 51 and a lower working table 52 which are oppositely arranged; the upper workbench 51 is arranged above the upper pressure head 1, and the lower workbench 52 is arranged at the bottom of the bottom die 3. The temperature measurement system comprises a thermocouple 6 and a temperature control system. And a thermocouple 6 is inserted into the outer wall of the female die 2 from outside and is used for reading the temperature data of the hot-pressing die and controlling the heating temperature of the quick heater.
In some embodiments, the flash heater 7 includes a high-frequency coil 71 and a high-frequency current collector 72. Placing the hot-pressing die and the blank 4 in a high-frequency coil 71, wherein a female die 2 is positioned in the middle of the high-frequency coil 71, and the height of the female die 2 is smaller than that of the high-frequency coil 71; when a high-frequency current is passed through the inside of the high-frequency coil 71, rapid heating of the cylindrical outer surface of the female mold 2 inside the high-frequency coil 71 is achieved. The high-frequency current device 72 is electrically connected to the high-frequency coil 71, and is used for enabling the high-frequency current to pass through the high-frequency coil 71, wherein the current frequency is 12000-20000 Hz.
In some embodiments, the apparatus for forming a SiCp/Al composite according to the present invention further includes an upper insulating pad 8 disposed on the top of the upper head 1 and a lower insulating pad 9 disposed on the bottom of the lower insulating plate 74. The upper and lower insulating blocks 8 and 9 are provided to reduce heat transfer to the press and thereby protect the press. The cavity block 2 is required to be a material which has ferromagnetic properties, is heated at a high frequency, and has good thermal conductivity, and the upper and lower insulating blocks 8 and 9 are required to be paramagnetic and have poor thermal conductivity.
In some embodiments, the outer wall of the female die 2 is provided with a test hole, which is a blind hole close to the inner cavity of the female die, but the test hole cannot be punched through. A thermocouple 6 is installed in the test hole.
According to the forming equipment of the SiCp/Al composite material, high-frequency heating is used as a heat source, a hot-pressing die and a blank 4 are arranged in a quick heater 7 and are arranged on a press machine 1, the hot-pressing die can be made of graphite or non-austenitic steel or cast iron, when high-frequency current flows in a high-frequency coil 71, the hot-pressing die is quickly heated, and the heating speed of the blank 4 is controlled by controlling the power of the quick heater 7.
Examples
Step 1), selecting abrasive grade green silicon carbide powder with the particle diameter of 63 mu m for SiC;
the Al is selected from industrial pure aluminum powder, the Al50Mg powder is commercially available alloy powder, the granularity is 100 mu m, and the two powders are prepared into mixed powder with the nominal component of Al10 Mg;
and then mixing SiC particles with Al10Mg mixed powder according to the volume ratio of 60%: uniformly mixing 40 percent of the mixture;
step 2) putting the uniformly mixed SiC/Al powder obtained in the step 1) into a steel cold pressing die, and pressing and forming the SiC/Al powder into a SiC/Al blank under the pressure of a 100MPa press;
and 3) under the atmospheric pressure condition, putting the SiC/Al subjected to cold press forming in the step 2) into a graphite hot-pressing die, and performing hot-pressing sintering by adopting a rapid heating hot-pressing technology. The sintering process of the rapid heating hot-pressing technology comprises the following steps: the heating temperature is 600 ℃, the applied pressure is about 10MPa, the temperature is kept for 30 minutes after the sintering temperature is reached, and the film cavity is removed, thus obtaining the SiCp (60%)/Al composite material.
Wherein, the realization equipment of rapid heating hot pressing technique is press and rapid heater 7, and the hot pressing sintering process of rapid heating hot pressing technique is: the heating temperature is 600 ℃, the applied pressure is about 10MPa, the temperature is kept for 30 minutes after the sintering temperature is reached, the temperature is naturally reduced to 350 ℃, and then the film is removed, thus obtaining the SiCp/Al composite material.
The SiCp/Al with the SiC content of 60 percent prepared by the method has the density as high as 98.2 percent, which is far more than 92 percent of the density of the material after being heated by a common resistance furnace and hot-pressed for 2 hours under the pressure of 200 MPa.
The forming device of the SiCp/Al composite material comprises a rapid heating device 7, a press machine, a hot-pressing die and a blank 4. The hot-pressing die and the blank 4 are quickly heated to a set temperature through the quick heating equipment 7, heat is preserved for a period of time, the press applies preset pressure, hot-pressing forming is carried out under the atmospheric condition, and a vacuum link is not needed. After the technology is adopted, the hot pressing time is shortened to 15-30 minutes, the hot pressing pressure is reduced to about 10MPa, the density of a hot-pressed blank is increased to about 98 percent, the efficiency is high, the cost is low, and the method is very suitable for industrial large-scale production.
The forming method of the SiCp/Al composite material has the following advantages:
the method has the characteristics of high temperature rise speed and short hot pressing time, the heating technology for hot pressing at present is mainly resistance heating, such as metal resistors, silicon-carbon rods, silicon-molybdenum rods and the like, the temperature rise process is generally more than 20 minutes or half an hour, the heating time of a quick heater adopted by the invention can be generally controlled within 1-3 minutes, the whole hot pressing process is only about 1/5 of the common hot pressing process, and the whole hot pressing process is about 1/10 of the vacuum hot pressing process;
the hot pressing pressure is small, the hot pressing pressure in the conventional technology is generally 100-200MPa, the hot pressing pressure of the method adopted by the invention is only about 1/10 of the conventional hot pressing pressure, the same hot pressing equipment can improve the production efficiency by 10 times, and the service life of a hot pressing mold can be greatly improved;
the pressure in the cold pressing process is only 1/8 of the cold pressing pressure of the common powder metallurgy aluminum-based composite material, so that on one hand, the production capacity of the same cold pressing equipment is improved by several times or even 8 times, on the other hand, parts with the sectional areas being 8 times of the original products can be processed, the feasibility of producing large-sized parts is greatly improved, and the service life of a cold pressing die is greatly prolonged;
and fourthly, performance customization is realized, the performance of the product produced by the project is mainly realized through material composition design, the production process is unchanged, even the parameter change is not very large, so that products with different performances are produced for the products with the same appearance under the condition that the production line is not adjusted, namely the products are customized under the condition that the production line is not moved according to requirements.
The thermal performance required by the electronic packaging substrate material can be adjusted through component design; the content of silicon carbide particles may need to be precisely controlled; the raw materials are commercial industrial powder, the source is wide, and the cost is low; the hot pressing process is generally carried out under the atmospheric condition, so that the vacuum link is avoided. Therefore, the method has the advantages of short hot pressing time (15-30 minutes), small hot pressing pressure (about 10 MPa), high density (about 98 percent), high efficiency and low cost, and is very suitable for industrial large-scale production.
The invention relates to a method for forming SiCp/Al composite material, which is applied to the production of powder metallurgy materials and products, in particular to the industrial production of low-expansion and high-heat-conduction SiCp/Al materials such as integrated circuit substrates, high-power LED lamp substrates, IGBT heat dissipation plates and the like and substrate samples.

Claims (2)

1. A method for molding a SiCp/Al composite material, characterized in that a SiCp/Al composite material molding apparatus is used, and the structure thereof comprises:
the hot-pressing die comprises an upper pressing head (1) positioned at the top, an annular female die (2) positioned in the middle and a bottom die (3) positioned at the bottom, wherein the upper pressing head (1), the female die (2) and the bottom die (3) surround to form a hollow cavity, and the hollow cavity is used for placing a blank (4) to be formed;
a rapid heater (7) arranged around the outside of the hot-pressing die and used for heating and insulating the hot-pressing die;
a press machine, comprising an upper working table (51) and a lower working table (52) which are oppositely arranged; the upper workbench (51) is arranged above the upper pressure head (1), and the lower workbench (52) is arranged at the bottom of the bottom die (3); the hot pressing die is used for providing axial pressure for the hot pressing die;
the temperature measuring system comprises a thermocouple (6) which is externally inserted into the outer wall of the female die (2) and is used for reading the temperature data of the hot-pressing die and controlling the heating temperature of the rapid heater (7) according to the temperature data;
the molding method comprises the following steps:
step 1), powder mixing: mixing SiC particles and Al powder or Al alloy powder according to the volume ratio of (10-90%): (90-10%) to obtain SiC/Al powder;
the diameter of the SiC particles is 14-63 mu m; the granularity of the Al powder or the Al alloy powder is 50-150 mu m;
step 2) cold-press forming: putting the SiC/Al powder obtained by uniformly mixing in the step 1) into a steel mould, and pressing and forming the SiC/Al blank (4) under the stress of 50-200 MPa;
step 3), hot-pressing sintering: putting the SiC/Al blank (4) formed by cold pressing in the step 2) into a hot-pressing die under the atmospheric pressure, and carrying out hot pressing on the SiC/Al blank by using a press machine and a quick heater (7) to obtain the SiCp/Al composite material after the hot pressing is finished;
the hot-pressing sintering process specifically comprises the following steps:
3.1) a rapid temperature rise stage:
heating the SiC/Al subjected to cold pressing forming by using a rapid heater (7), and raising the temperature of a hot pressing die to 450-650 ℃ within 2-4 minutes, wherein the pressure of the press machine on the SiC/Al blank (4) is 5-20 MPa;
3.2) a heat preservation stage:
keeping the temperature within the range of 450-650 ℃, and preserving the temperature for 15-30 minutes;
3.3) a cooling stage:
and after the heat preservation is finished, controlling the pressure of the press machine to be 10-30 MPa, naturally cooling the hot-pressing die to 300-400 ℃, and demolding to obtain the SiCp/Al composite material.
2. The molding method according to claim 1, wherein the flash heater (7) comprises:
the high-frequency coil (71) is spirally arranged around the outer sides of the upper pressure head (1), the female die (2) and the bottom die (3);
a high-frequency current device (72) electrically connected to the high-frequency coil (71), wherein the current frequency is 12000-20000 Hz.
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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2339844A1 (en) * 1973-08-07 1975-02-27 Mahle Gmbh Heat-resistant, aluminium sinter alloys - contg copper, iron, nickel and or chromium, magnesium and silicon carbide
CN102618740A (en) * 2011-12-27 2012-08-01 中国科学院苏州纳米技术与纳米仿生研究所 Silicon carbide reinforced aluminum-based composite material and its preparation method
CN102676883A (en) * 2011-12-19 2012-09-19 河南科技大学 Silicon carbide reinforced aluminum-based composite material and preparation method thereof
CN103160702A (en) * 2013-03-19 2013-06-19 山东大学 Method for preparing silicon carbide particle reinforced aluminum matrix composite material
CN103602869A (en) * 2013-11-18 2014-02-26 湖南金马铝业有限责任公司 Process for preparing high-volume-fraction aluminum silicon carbide-based composite material by powder metallurgic method
CN106521251A (en) * 2016-12-07 2017-03-22 西安工业大学 Forming device and method of low-expansion high-thermal-conductivity SiCp/Al composite
CN206373357U (en) * 2016-12-07 2017-08-04 西安工业大学 A kind of former of low bulk, highly thermally conductive SiCp/Al composites
CN107513634A (en) * 2017-08-21 2017-12-26 湖南金马铝业有限责任公司 A kind of densification process for preparing high body and dividing SiCp/Al composites

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2339844A1 (en) * 1973-08-07 1975-02-27 Mahle Gmbh Heat-resistant, aluminium sinter alloys - contg copper, iron, nickel and or chromium, magnesium and silicon carbide
CN102676883A (en) * 2011-12-19 2012-09-19 河南科技大学 Silicon carbide reinforced aluminum-based composite material and preparation method thereof
CN102618740A (en) * 2011-12-27 2012-08-01 中国科学院苏州纳米技术与纳米仿生研究所 Silicon carbide reinforced aluminum-based composite material and its preparation method
CN103160702A (en) * 2013-03-19 2013-06-19 山东大学 Method for preparing silicon carbide particle reinforced aluminum matrix composite material
CN103602869A (en) * 2013-11-18 2014-02-26 湖南金马铝业有限责任公司 Process for preparing high-volume-fraction aluminum silicon carbide-based composite material by powder metallurgic method
CN106521251A (en) * 2016-12-07 2017-03-22 西安工业大学 Forming device and method of low-expansion high-thermal-conductivity SiCp/Al composite
CN206373357U (en) * 2016-12-07 2017-08-04 西安工业大学 A kind of former of low bulk, highly thermally conductive SiCp/Al composites
CN107513634A (en) * 2017-08-21 2017-12-26 湖南金马铝业有限责任公司 A kind of densification process for preparing high body and dividing SiCp/Al composites

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