CN106521251A - Forming device and method of low-expansion high-thermal-conductivity SiCp/Al composite - Google Patents
Forming device and method of low-expansion high-thermal-conductivity SiCp/Al composite Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/003—Apparatus, e.g. furnaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/02—Compacting only
- B22F3/03—Press-moulding apparatus therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/05—Mixtures of metal powder with non-metallic powder
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/05—Mixtures of metal powder with non-metallic powder
- C22C1/051—Making hard metals based on borides, carbides, nitrides, oxides or silicides; Preparation of the powder mixture used as the starting material therefor
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
- C22C29/02—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides
- C22C29/06—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds
- C22C29/065—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds based on SiC
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
- C22C29/02—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides
- C22C29/06—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds
- C22C29/067—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds comprising a particular metallic binder
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
- C22C32/0052—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides
- C22C32/0063—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides based on SiC
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
- B22F2003/145—Both compacting and sintering simultaneously by warm compacting, below debindering temperature
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
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Abstract
The invention provides a forming device and method of low-expansion high-thermal-conductivity SiCp/Al composite. The device comprises a base. The base is connected with a beam through vertical pillars. A pressurization device is arranged in the middle of the base and connected with a heating furnace through a position adjusting cushion block. An upper pressing block is arranged on the heating furnace, the two ends of the heating furnace are connected with the vertical pillars through sliding holes correspondingly, and the upper end of the heating furnace is connected with balance weights in the base in a pulley guiding mode through suspension wires. An upper limiting stopper and a lower limiting stopper are arranged on each vertical pillar, and the sliding holes of the heating furnace are located between the upper limiting stoppers and the lower limiting stoppers. The low-expansion high-thermal-conductivity SiCp/Al composite is prepared and formed through links including powder mixing, cold pressing forming, atmosphere hot pressing sintering and the like, all the links are conducted under the atmosphere condition, and a vacuum link is not needed. By using the technology, the technique is simple, the process is short, efficiency is high, cost is low, and the forming device and method of the low-expansion high-thermal-conductivity SiCp/Al composite are very suitable for industrialized mass production.
Description
Technical field
The invention belongs to powdered metallurgical material technical field, and in particular to a kind of low bulk, highly thermally conductive SiCp/Al are combined
The former of material and its method.
Background technology
Existing large scale integrated circuit substrate and high-power LED lamp substrate mainly adopt alumina material product or copper very
To aluminium base, ceramic substrate is with the hot expansibility suitable with semiconductor chip material, but the thermal characteristic of its low heat conduction
In the higher and higher modern electronic product of design power, scattering and disappearing for chip heat is seriously hindered, so as to have a strong impact on electricity
The service life and stability of sub- product, according to the test of high-power LED industry, generally using the life-span only has 1-2 or so, according to 10
The projected life in year differs greatly；The metal basal board contrast such as copper or aluminum, although have a good radiating effect, but and chip
The thermally matched numerous imbalances of material, so as to cause product failure due to thermal stress fatigue destruction, according to the survey of high-power LED industry
Examination, generally using the life-span only has or so half a year, only the 1/20 of projected life.SiCp/Al composites are due to combining ceramics
Low bulk and metal high heat conduction excellent thermal property, be a kind of preferable electronic package substrate material, abroad
Volume industrial is produced and is come into operation, and the country is also substantially at development.（It is specifically added）
Especially hot property is mainly determined the performance of SiCp/Al composites by the content of silicon-carbide particle：Carborundum content is carried
Height, then the thermal coefficient of expansion reduction of material, and heat conductivility and toughness are deteriorated relatively, its content can be controlled in 20～90%；Aluminum contains
Amount is improved, then the heat conductivility of material and toughness are improved, but thermal coefficient of expansion is also improved.The heat conductivity of the metal-base composites
Fine aluminium is all close to weight, and can Coefficient of Thermal Expansion value be controlled equivalent to the 30%～50% of aluminum, to adapt to different works
The needs of condition.
Silicon carbide powder is cheap, wide material sources and with excellent performance, thermal coefficient of expansion and chip material Si and
GaAs is close, is a kind of ideal enhancing thing.Aluminum is a kind of common, cheap metal material, fusing point low (660 DEG C),
Less (the 2.7g/cm of density3), only 1/3rd of iron and steel or so have very big potentiality on specific strength, specific modulus is improved.
SiCp/Al composites had both maintained the features such as distinctive excellent toughness of metal and conductive, heat transfer, and the high temperature resistant with ceramics
Property, corrosion resistance, low heat expansion, have adapted to lightweight, low cost, high intensity, high-moduluss, corrosion-resistant, anti abrasive requirement, can
It is applied to space flight and aviation, automobile, internal combustion engine, national defence and physical culture, optical instrument, and microwave, electric power, electronics (or photoelectron)
In device encapsulation, reduces cost, mitigation weight can be played a positive role.The demand of such material is rather huge, before market
Scape is wide.
Existing high-volume fractional silicon-carbide particle reinforced aluminium-base composite material（SiCp/Al）Typically adopt liquid process or
Person's powder metallurgical technique is manufactured.In the material that the former obtains, the content of SiC is often difficult to the dispersing uniformity of precise control, SiC
Also it is poor, so as to the dispersibility for being easily caused properties of product is larger；The latter's existing process is manufactured using vacuum hotpressing, due to taking out
Vacuum link causes the placement of green compact and the taking-up of ripe base extremely inconvenient, so as to significantly increase life cycle of the product, causes life
Inefficiency is produced, is unfavorable for industrialized production, simultaneously because the use of vacuum equipment, substantially increases equipment cost, safeguards into
This, and human cost, and hot pressed sintering is a kind of common activated sintering mode in powder metallurgical technique, existing high volume integral
In the powder metallurgy preparation technique of number enhancing aluminum-base composite material by silicon carbide particles, typically using vacuum heating-press sintering, although
The material property for arriving is excellent, but lacks while bringing low production efficiency, high technology cost, high maintenance cost, high cost of labor etc.
Point, causes the method to be unsuitable for large-scale production, limits the commercial Application for being prepared electronic package substrate product by the method, especially
Which is vast product for civilian use field.
The content of the invention
In order to overcome the above-mentioned deficiencies of the prior art, it is an object of the invention to provide a kind of low bulk, highly thermally conductive SiCp/
The former of Al composites and its method, are applied to the development and trial-production of powdered metallurgical material and product, more particularly to
The quick hot pressing of the low bulks, the SiCp/Al materials of high heat conduction and substrate sample such as ic substrate, high power LED lamp substrate
Molding, the hot-forming shortcomings for solving above-mentioned powder metallurgical technique under the atmospheric condition that the method is adopted, reaches Gao Sheng
The effect of efficiency and low production cost is produced, provides strong for promoting high-performance electronic base plate for packaging SiCp/Al class products applications
Technical support.
To achieve these goals, the technical solution used in the present invention is：
The former of a kind of low bulk, highly thermally conductive SiCp/Al composites, including pedestal, pedestal is horizontal by column connection
Beam, is provided with pressue device in the middle of pedestal, pressue device connects heating furnace by cushion block of transposing, and heating furnace is provided with upper holder block, plus
Hot stove two ends connect column by slide opening, heat furnace upper end and are oriented to the counterweight in connection pedestal by messenger wire by pulley, on column
Upper and lower stop is provided with, the slide opening of heating furnace is located between upper and lower stop.
Described heating furnace upper surface connects two counterweight in pedestal respectively by the symmetrical messenger wire in both sides.
Described slide rail is located above crossbeam.
Described slide rail, messenger wire, upper and lower stop, heating furnace, counterweight composition fast lifting heating system；Crossbeam, column
Rigid frame is constituted with pedestal；Pressue device, positioning cushion block and upper holder block composition compression system.
The forming method of a kind of low bulk, highly thermally conductive SiCp/Al composites, it is characterised in that comprise the following steps：
1）Mixed powder：SiC selects 14～63 μm of abrasive material level green silicon carbide powder；Al selects technical pure aluminium powder, or alloyed powder, granularity
About 100 μm, and any binding agent in composition, is not required to, by SiC particulate with Al powder or Al alloy powders it is by volume：（20
～90%)：（80～10%) uniform mixing；
2）Cold-press moulding：By step 1）The SiC/Al powder of mix homogeneously is put in steel die, and introduces one in raw material outer layer
Pure aluminium powder thin layer, the press molding under 400MPa stress；
3）Hot pressed sintering：Under atmospheric conditions, the SiC/Al after cold-press moulding is put in graphite jig, using hot pressed sintering
Technology is sintered, and sintering process is：Heating-up temperature is 500～700 DEG C, and the pressure of applying is 1～40MPa, reaches sintering temperature
5-10 minutes are incubated after degree, are deviate from membrane cavity, that is, SiCp has been obtained（20～90%)/Al electronic package materials.
Described hot pressed sintering is comprised the following steps that：
1）The quick placement of sample and taking-up, are adjusted by former load and are controlled and be common by rigid frame and compression system
Realize, by positioning cushion block and pressue device adjustment mould and examination in suitable height, by counterweight, pulley, heating furnace and hang
Line is quickly moved to upper and lower spacing upper limit, and mould and sample are placed on cushion block, is made at mould and sample by pressue device
In hot pressing position and apply operation pressure, when sample takes out, then heating furnace is moved back to into extreme higher position, unloading by mould and sample
Move to the outer correct position of heating furnace；
2）The quick heating of sample and cooling, mould and sample are heated by the position adjustment of heating furnace, and pass through position adjustment
Fast cooling, realizes in the outer diverse location of stove according to sample；
3）Hot pressing atmosphere is adjusted, and for the hot pressing for needing gas shield, by the simple transformation to tubular heater, is realized
The inert gas shielding hot pressing such as nitrogen, argon.
The invention has the beneficial effects as follows：
This method mainly includes mixed powder, cold-press moulding, three process procedures of hot pressed sintering, does not contain Plastic Forming wherein in raw material
Agent（For Organic substance, additionally add in conventional powder metallurgical technique）, it is to avoid the secondary pollution in sintering process；During cold-press moulding
Thin layer aluminum layer is coated outside cold base, when SiCp/Al materials are sintered under oxidative conditions, is coated on base just because of fine aluminium
Body surface face defines one layer of fine and close aluminum oxide film, hinders oxygen and diffuses into and cause inside base substrate internal oxidition；Therefore, hot pressing
Vacuum environment is not needed during sintering, but can be carried out in atmospheric conditions.In addition, the quick hot press forming technology of the present invention makes again
Condensation material metallic matrix is in high deformation state, or even molten state, so as to substantially reduce hot pressing pressure, only conventional hot-press pressure
（100～200MPa）10-25%, so as to greatly reduce the requirement to press tonnage；Or, in the pressure using identical tonnage
Machine, once can be with the powder metallurgy base substrate of hot pressing more than 4-10, at least more than the 4 of conventional hot-press process efficiency times.Utilize
This technique using the production equipment of existing use ceramic substrate part, can adopt class with the long rods of processing and manufacturing SiCp/Al or column blank
Following process is carried out like production technology, the lamellar blank of appointed thickness is obtained particular by the processing of microtome machine cuts, so
Process the hole class accessory structure of pdm substrate defined afterwards using rig, substrate product is obtained finally by grinding
Product；This technique can also directly process the lamellar blank for preparing appointed thickness, so as to reduce above-mentioned slicing process, directly punch,
Grind and obtain pdm substrate.And, the main hot property of the electronic package substrate material prepared using the device is not detailed low
In the material prepared by liquid phase process and vacuum hotpressing powder metallurgical technique, it is entirely capable of meeting the requirement of electronic package material, very
It is suitable to the mass industrialized production of high silicon carbide content aluminum matrix composite used for electronic packaging.The quick hot-forming bag of this equipment
Include several aspects：1）Operation to sample and mould carried out outside heating furnace, it is to avoid other heat pressing process are operated in stove
Inconvenience shortcoming；2）Quick heating is realized by good tubular heater is incubated；3）Quick cooling be then by by mould and
Sample removes heating furnace, and air cooling is realized, and adjusts cooldown rate within the specific limits according to away from heating furnace different distance, is contracted significantly
The short cool time of sample, so as to improve efficiency, relative vacuum heat pressing process is especially pronounced.By this equipment, can now
There is vacuum hotpressing 6～10 hours or so（Hot pressing time is set as 15～30 minutes）Technical process foreshorten to 1 hour or so,
The key property of sample is obtained, including consistency, heat conductivity and thermal coefficient of expansion etc. quite.
Specifically there is the advantage to be：
1. the thermal property of electronic package substrate material requirements can be adjusted by composition design；
2. the content of silicon-carbide particle can need precise control；
3. raw material is commercially available industrial powder, wide material sources, with low cost；
4. hot pressing is typically carried out in atmospheric conditions, it is to avoid vacuum link.Therefore, this method has process is simple, stream
Journey is short, efficiency high, low cost the characteristics of, be fully compatible for industrialization large-scale production.
Description of the drawings
Fig. 1 is the quick hot-pressing forming system structural scheme of mechanism of the present invention.
Fig. 2 is the forming method schematic diagram of the present invention
Wherein, 1 is slide rail；2 is messenger wire；3 is crossbeam；4 is upper and lower stop；5 is column；6 is heating furnace；7 are pressurization dress
Put；8 is pedestal；9 is counterweight；10 are positioning cushion block；11 is mould and sample；12 is upper holder block.
Specific embodiment
Invention is further discussed below below in conjunction with accompanying drawing.
As shown in figure 1, a kind of low bulk, the former of highly thermally conductive SiCp/Al composites, including pedestal 8, pedestal
8 by 5 connecting cross beam 3 of column, is provided with pressue device 7 in the middle of pedestal 8, and pressue device 7 connects heating furnace by cushion block 10 of transposing
6, heating furnace 6 is provided with upper holder block 12, and 6 two ends of heating furnace connect column 5 by slide opening, and 6 upper end of heating furnace is by messenger wire 2 by sliding
Wheel 1 is oriented to the counterweight 9 in connection pedestal 8, and column 5 is provided with upper and lower stop 4, and the slide opening of heating furnace 6 is positioned at upper and lower spacing
Between device 4.
Described 6 upper surface of heating furnace connects two counterweight 9 in pedestal 8 respectively by the symmetrical messenger wire in both sides.
Described slide rail 1 is located above crossbeam 3.
Described slide rail 1, messenger wire 2, upper and lower stop 4, heating furnace 6, the composition fast lifting heating system of counterweight 9；Crossbeam
3rd, column 5 and the composition rigid frame of pedestal 8；Pressue device 7, positioning cushion block 10 and the composition compression system of upper holder block 12.
As shown in Fig. 2 a kind of low bulk, the forming method of highly thermally conductive SiCp/Al composites, it is characterised in that bag
Include following steps：
1）Mixed powder：SiC selects 14～63 μm of abrasive material level green silicon carbide powder；Al selects technical pure aluminium powder, or alloyed powder, granularity
About 100 μm, and any binding agent in composition, is not required to, by SiC particulate with Al powder or Al alloy powders it is by volume：（20
～90%)：（80～10%) uniform mixing；
2）Cold-press moulding：By step 1）The SiC/Al powder of mix homogeneously is put in steel die, and introduces one in raw material outer layer
Pure aluminium powder thin layer, the press molding under 400MPa stress；
3）Hot pressed sintering：Under atmospheric conditions, the SiC/Al after cold-press moulding is put in graphite jig, using hot pressed sintering
Technology is sintered, and sintering process is：Heating-up temperature is 500～700 DEG C, and the pressure of applying is 1～40MPa, reaches sintering temperature
5-10 minutes are incubated after degree, are deviate from membrane cavity, that is, SiCp has been obtained（20～90%)/Al electronic package materials.
Described hot pressed sintering is comprised the following steps that：
1）The quick placement of sample and taking-up, are adjusted by former load and are controlled and be common by rigid frame and compression system
Realize, suitable height is in by positioning cushion block and pressue device adjustment mould and examination, by counterweight 9, pulley 1,6 and of heating furnace
Messenger wire 2 is quickly moved to upper and lower spacing 4 upper limit, and mould and sample 11 are placed on cushion block 10, mould is made by pressue device 7
Tool and sample 11 are in hot pressing position and apply operation pressure, when sample takes out, then heating furnace 6 are moved back to extreme higher position, unload
And mould and sample 11 are moved to into 6 outer correct position of heating furnace；
2）The quick heating of sample and cooling, mould and sample 11 are heated by the position adjustment of heating furnace 6, and are adjusted by position
Whole fast cooling, realizes in the outer diverse location of stove according to sample；
3）Hot pressing atmosphere is adjusted, and for the hot pressing for needing gas shield, by the simple transformation to tubular heater, is realized
The inert gas shielding hot pressing such as nitrogen, argon.
Claims (6)
1. a kind of low bulk, the former of highly thermally conductive SiCp/Al composites, including pedestal（8）, it is characterised in that base
Seat（8）By column（5）Connecting cross beam（3）, pedestal（8）Centre is provided with pressue device（7）, pressue device（7）By pad of transposing
Block（10）Connection heating furnace（6）, heating furnace（6）It is provided with upper holder block（12）, heating furnace（6）Two ends connect column by slide opening
（5）, heating furnace（6）Upper end passes through messenger wire（2）By pulley（1）It is oriented to connection pedestal（8）Interior counterweight（9）, column（5）It is provided with
Upper and lower stop（4）, heating furnace（6）Slide opening be located at upper and lower stop（4）Between.
2. a kind of low bulk according to claim 1, the former of highly thermally conductive SiCp/Al composites, its feature
It is, described heating furnace（6）Upper surface connects pedestal respectively by the symmetrical messenger wire in both sides（8）Interior two counterweight（9）.
3. a kind of low bulk according to claim 1, the former of highly thermally conductive SiCp/Al composites, its feature
It is, described slide rail（1）Positioned at crossbeam（3）Top.
4. a kind of low bulk according to claim 1, the former of highly thermally conductive SiCp/Al composites, its feature
It is, described slide rail（1）, messenger wire（2）, upper and lower stop（4）, heating furnace（6）, counterweight（9）Composition fast lifting heating system
System；Crossbeam（3）, column（5）And pedestal（8）Composition rigid frame；Pressue device（7）, positioning cushion block（10）And upper holder block（12）
Composition compression system.
5. a kind of low bulk, the forming method of highly thermally conductive SiCp/Al composites, it is characterised in that comprise the following steps：
1）Mixed powder：SiC selects 14～63 μm of abrasive material level green silicon carbide powder；Al selects technical pure aluminium powder, or alloyed powder, granularity
About 100 μm, and any binding agent in composition, is not required to, by SiC particulate with Al powder or Al alloy powders it is by volume：（20
～90%)：（80～10%) uniform mixing；
2）Cold-press moulding：By step 1）The SiC/Al powder of mix homogeneously is put in steel die, and introduces one in raw material outer layer
Pure aluminium powder thin layer, the press molding under 400MPa stress；
3）Hot pressed sintering：Under atmospheric conditions, the SiC/Al after cold-press moulding is put in graphite jig, using hot pressed sintering
Technology is sintered, and sintering process is：Heating-up temperature is 500～700 DEG C, and the pressure of applying is 1～40MPa, reaches sintering temperature
5-10 minutes are incubated after degree, are deviate from membrane cavity, that is, SiCp has been obtained（20～90%)/Al electronic package materials.
6. a kind of low bulk according to claim 1, the forming method of highly thermally conductive SiCp/Al composites, its feature
It is that described hot pressed sintering is comprised the following steps that：
1）The quick placement of sample and taking-up, are adjusted by former load and are controlled and be common by rigid frame and compression system
Realize, suitable height is in by positioning cushion block and pressue device adjustment mould and examination, by counterweight（9）, pulley（1）, heating
Stove（6）And messenger wire（2）It is quickly moved to upper and lower spacing（4）Upper limit, by mould and sample（11）It is placed in cushion block（10）On, lead to
Cross pressue device（7）Make mould and sample（11）In hot pressing position and apply operation pressure, when sample takes out, then by heating furnace
（6）It is moved back to extreme higher position, unloading by mould and sample（11）Move to heating furnace（6）Outer correct position；
2）The quick heating of sample and cooling, mould and sample（11）By heating furnace（6）Position adjustment heating, and pass through position
Adjustment fast cooling is put, is realized in the outer diverse location of stove according to sample；
3）Hot pressing atmosphere is adjusted, and for the hot pressing for needing gas shield, by the simple transformation to tubular heater, is realized
The inert gas shielding hot pressing such as nitrogen, argon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611112891.5A CN106521251B (en) | 2016-12-07 | 2016-12-07 | The molding equipment and its method of a kind of low bulk, highly thermally conductive SiCp/Al composite material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108315629A (en) * | 2018-02-13 | 2018-07-24 | 济南大学 | A kind of preparation method of Al/SiC ceramic-metal composites |
| CN112195354A (en) * | 2020-10-12 | 2021-01-08 | 西安工业大学 | Forming method of SiCp/Al composite material |
| CN112281010A (en) * | 2020-10-12 | 2021-01-29 | 西安工业大学 | Forming method suitable for sheet SiCp/Al composite material |
| CN112846655A (en) * | 2020-12-30 | 2021-05-28 | 苏州列治埃盟新材料技术转移有限公司 | Preparation device of lead-free copper material alloy rod for gear |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105714137A (en) * | 2014-12-05 | 2016-06-29 | 北京有色金属研究总院 | High-volume-fraction silicon carbide particle reinforced aluminum matrix composite and preparation method thereof |
| CN106064242A (en) * | 2016-07-25 | 2016-11-02 | 哈尔滨工业大学 | A kind of SPS of employing prepares the method for SiC particle enhanced aluminum-based composite material |
| CN206373357U (en) * | 2016-12-07 | 2017-08-04 | 西安工业大学 | A kind of former of low bulk, highly thermally conductive SiCp/Al composites |
-
2016
- 2016-12-07 CN CN201611112891.5A patent/CN106521251B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105714137A (en) * | 2014-12-05 | 2016-06-29 | 北京有色金属研究总院 | High-volume-fraction silicon carbide particle reinforced aluminum matrix composite and preparation method thereof |
| CN106064242A (en) * | 2016-07-25 | 2016-11-02 | 哈尔滨工业大学 | A kind of SPS of employing prepares the method for SiC particle enhanced aluminum-based composite material |
| CN206373357U (en) * | 2016-12-07 | 2017-08-04 | 西安工业大学 | A kind of former of low bulk, highly thermally conductive SiCp/Al composites |
Non-Patent Citations (1)
| Title |
|---|
| 李建平等: "粉末冶金法制备Al-12%CuO系原位铝基复合材料的组织和性能", 《西安工业大学学报》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108315629A (en) * | 2018-02-13 | 2018-07-24 | 济南大学 | A kind of preparation method of Al/SiC ceramic-metal composites |
| CN112195354A (en) * | 2020-10-12 | 2021-01-08 | 西安工业大学 | Forming method of SiCp/Al composite material |
| CN112281010A (en) * | 2020-10-12 | 2021-01-29 | 西安工业大学 | Forming method suitable for sheet SiCp/Al composite material |
| CN112195354B (en) * | 2020-10-12 | 2021-10-26 | 西安工业大学 | Forming method of SiCp/Al composite material |
| CN112281010B (en) * | 2020-10-12 | 2022-02-11 | 西安工业大学 | Forming method suitable for sheet SiCp/Al composite material |
| CN112846655A (en) * | 2020-12-30 | 2021-05-28 | 苏州列治埃盟新材料技术转移有限公司 | Preparation device of lead-free copper material alloy rod for gear |
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