CN109487130A - A kind of Al-Si composites and preparation method thereof for Electronic Packaging - Google Patents
A kind of Al-Si composites and preparation method thereof for Electronic Packaging Download PDFInfo
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- CN109487130A CN109487130A CN201811598552.1A CN201811598552A CN109487130A CN 109487130 A CN109487130 A CN 109487130A CN 201811598552 A CN201811598552 A CN 201811598552A CN 109487130 A CN109487130 A CN 109487130A
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
- C22C21/02—Alloys based on aluminium with silicon as the next major constituent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/1003—Use of special medium during sintering, e.g. sintering aid
- B22F3/1007—Atmosphere
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- B22—CASTING; POWDER METALLURGY
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- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
- B22F2003/145—Both compacting and sintering simultaneously by warm compacting, below debindering temperature
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
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Abstract
A kind of Al-Si composites and preparation method thereof for Electronic Packaging, belong to electronic package material preparation field.This is used for the Al-Si composites of Electronic Packaging, the mass percent of the ingredient contained and each ingredient are as follows: Si 50-70%, surplus Al；Wherein, the purity of Si be >=99.59wt.%, 10-30 μm of median；The purity of Al be >=99.5wt.%, 10-30 μm of median.Preparation method are as follows: after mixing raw material powder, be fitted into aluminium jacket, the mold after being placed in preheating is suppressed in 800MPa-1100MPa, then vacuum degree≤10‑1Pa is warming up to 750-1000 DEG C with 1-5 DEG C/min, keeps the temperature 1-4h.Al-Si composites obtained for Electronic Packaging, consistency is high, thermal conductivity is high, thermal expansion coefficient is low.The preparation method for being used for the Al-Si composites of Electronic Packaging is produced on a large scale.
Description
Technical field
The invention belongs to electronic package material preparation technical field, more specifically powder metallurgical technique preparation is used for electronic seal
The Al-Si composites technical field of dress in particular, provides a kind of for the Al-Si composites of Electronic Packaging and its preparation side
Method
Background technique
Electronic package material is to play heat dissipation, mechanical support, sealing, environment for carrying electronic device and its interconnecting line
The basis material of the effects of protection, signal transmitting and shielding.With the development of microelectric technique, electronic component has higher
Integrated level, the faster speed of service and bigger capacity.This results in the raising of circuit calorific value, operating temperature to rise.Electronics
The crash rate of device increased dramatically with the rising of operating temperature.Substantially operating temperature is every increases 10 DEG C, semiconductor devices
Service life will decline one third.The heat dissipation and cooling of electronic device generally use heat sink, radiator and electronic package material is real
It is existing.Researching and developing, there is the electronic package material of high heat conductance, low thermal coefficient of expansion and good comprehensive performance to become electronic seal
The a key technology in dress field and the development for influencing electronics industry.
Patent CN106086494A discloses a kind of preparation method of encapsulation alusil alloy, and technique is with silicon powder and aluminium
Powder is raw material, and starting powder is packed into jacket after ball milling pretreatment, and then vacuum degassing is pressed into hot isostatic press
Type then carries out machining and finished product is made.Alloy relative density reaches 99.5% or more, and thermal conductivity is 100-180W/ (m
K), thermal expansivity coefficient is 5-15 × 10-6K-1.But this method complex process and equipment cost is higher；Patent CN106493352A
A kind of Al-Si composites and preparation method thereof for Electronic Packaging are disclosed, the weight of the invention each component is expressed as follows:
Water atomization alusil alloy powder 50%-60%；Silicon powder 39-49.5%；Glass putty 0.5%-1%.The alusil alloy electronic seal of the invention
Package material is added water atomization alusil alloy powder and pure tin powder, greatly reduces compared with traditional alusil alloy electronic package material
Liquid phase sintering conditions improve sintered density, while using aluminium alloy activated sintering technology, improve electronic package material
Intensity.But this method technique is cumbersome and higher cost；Patent CN102978485A discloses a kind of novel for Electronic Packaging
Al-Si composites and its preparation process, the alloy of the invention are to constitute 12-40%Si by the ingredient of following mass percent,
0.3-0.6%Fe, 0.3-0.45%Mn, 0.3-0.5%Mg, remaining is commercial-purity aluminium.Billet is prepared using spray deposition, it is right
Billet carries out carrying out multiple small deformation calorimetric densification again after eliminating thermal stress annealing, alloy processing cracking is prevented, to improve
The alloy of material density, the invention has the features such as high intensity, low-expansion coefficient, high thermal conductivity and good air-tightness.But it sprays
Penetrating major defect existing for sedimentation has very much, and crucial technological parameter such as air velocity, liquid stream diameter, melt temperature etc. is difficult to
Control, can only generally be held by experience.Due in powder jetting hydrodynamic instabilities and flying method cause to make pottery
Porcelain distribution of particles is uneven, can only reduce or eliminate this inhomogeneities by changing spray parameters and subsequent technique, be injected into
The semi-finished product porosity of type is about 5%, it is necessary to pass through secondary operation, improve production cost.
Summary of the invention
For overcome the deficiencies in the prior art, the invention proposes a kind of Al-Si composites for Electronic Packaging and its
Preparation method, the Al-Si composites for Electronic Packaging of this method preparation, consistency is high, thermal conductivity is high, thermal expansion system
Number is low.And the preparation method of the Al-Si composites for being used for Electronic Packaging is produced on a large scale.
The present invention provides a kind of Al-Si composites for Electronic Packaging, the matter of the ingredient contained and each ingredient
Measure percentage are as follows: Si 50-70%, surplus Al；
The purity of the Si be >=99.59wt.%, 10-30 μm of median；
The purity of the Al be >=99.5wt.%, 10-30 μm of median.
The Al-Si composites for Electronic Packaging, relative density >=95%, thermal conductivity are (100-128) W/
(mK), room temperature to 150 DEG C of mean thermal expansion coefficients be 9.3 × 10-6℃-1-12.5×10-6℃-1。
A kind of preparation method of Al-Si composites for Electronic Packaging of the invention, comprising the following steps:
Step 1: preheated mold
Mold is preheated to 300-450 DEG C, the mold after being preheated；
Step 2: fine aluminium jacket and powder preheating
According to the ratio, raw material powder is weighed after mixing by raw material powder to be fitted into the aluminium jacket of wall thickness 0.1-0.5mm,
It is preheated to 250-400 DEG C, keeps the temperature 5-30min, the package aluminium material after being preheated；
Step 3: compacting
Package aluminium material after preheating is placed in the mold after preheating, is put in mold and punching head and package aluminium material contact position
One layer of aluminium sheet is set, hot pressing is carried out to powder at 800MPa-1100MPa, obtains hot pressing billet；
Step 4: vacuum-sintering
Hot pressing billet is put into crucible and is placed in vacuum sintering furnace, vacuum sintering furnace is evacuated to≤10-1Pa, with
1-5 DEG C/min heating rate is warming up to 750-1000 DEG C, keeps the temperature 1-4h, cools to room temperature with the furnace, obtain for Electronic Packaging
Al-Si composites.
In the step one, the preheating, soaking time 0.5h-2h.
Preferably, the aluminium jacket used is fine aluminium jacket, and fine aluminium jacket does not bind, and wall thickness is in the step two
0.3mm。
In the step three, the hot pressing, the dwell time is preferably 5-60s.
In the step three, before compacting, mold is lubricated using lubricant.
Preferably, in pressing process, the preheating temperature of the package aluminium material after preheating is 300 in the step three
DEG C, the preheating temperature of mold is 300 DEG C -450 DEG C, pressing pressure 900MPa.
In the step four, the crucible is high-temperature crucible, preferably Al2O3Crucible.
In the step four, the vacuum-sintering generates so that diffusion and sufficiently reaction occur between aluminium Si powder
Uniform formation.
Preferably, hot pressing billet is put into Al in the step four2O3It is placed in vacuum sintering furnace, takes out in crucible
Vacuum is to 10-3Pa, heating rate are 5 DEG C/min, and slow heating rate facilitates hot pressing green compact internal gas and moisture
Discharge.
The Al-Si composites and preparation method thereof that the present invention provides a kind of for Electronic Packaging, with prior art phase
Than having the advantage that
(1) present invention selects Al-Si composites of the silicone content mass percent higher than 50% as material used for electronic packaging
Material, the thermal conductivity of fine aluminium are 237W/ (mK), but the more a height of 23.6/K of its thermal expansion coefficient, and the thermal expansion coefficient of pure silicon is
4.1/K can drop low-alloyed thermal expansion coefficient, while also possessing preferable thermal conductivity by improving the mass percent of silicon.
(2) present invention can effectively reduce pressure with the hot-forming method of fine aluminium jacket using the jacket of fine aluminium material
Frictional force during system between powder and mold reduces the crackle that pressing process generates, and improves compacting success rate.
(3) mixed-powder of the present invention is preheated to 300 DEG C, and mold temperature is preheated to 300 DEG C, 350 DEG C, 400 DEG C, 450 respectively
℃.Alloy billet is suppressed at a certain temperature, can effectively promote intergranular combination.The consistency of alloy is improved, is reduced
The hole and crackle generated in pressing process.
(4) sintering process of the present invention is that blank is put into vacuum sintering furnace and is evacuated to 10-3After Pa, with 5 DEG C/min's
Heating rate is ramped up target temperature.Target temperature is ramped up with the heating rate of 5 DEG C/min under vacuum conditions, the mistake
Journey effectively can carry out cryogenic vacuum degasification to billet, reduce the generation of alloy stomata.
(5) the invention proposes a kind of practicable process routes, obtain prefabricated green compact by the method for powder hot-pressing,
Green compact progress vacuum-sintering is obtained into sintered body billet, wherein low temperature degasification carries out simultaneously with vacuum-sintering, simplifies technique step
Suddenly.By suppressing under certain temperature the high pressure of powder, the generation of porosity and micro-crack can be effectively reduced, is prepared low swollen
It is swollen, highly thermally conductive, the encapsulating material of high-compactness.
Detailed description of the invention
Fig. 1 is the microscopic structure for the Al-Si composites for Electronic Packaging that Si content is 60% in embodiment 1.
Fig. 2 is the microscopic structure for the Al-Si composites for Electronic Packaging that Si content is 50% in embodiment 3.
Fig. 3 is the microscopic structure for the Al-Si composites for Electronic Packaging that Si content is 60% in embodiment 4.
Fig. 4 is the microscopic structure for the Al-Si composites for Electronic Packaging that Si content is 70% in embodiment 5.
Specific embodiment
Below with reference to embodiment, the present invention is described in further detail.
The Al-Si composites and preparation method thereof that the present invention provides a kind of for Electronic Packaging, to make mesh of the invention
, technical solution and effect it is clearer, clear, being exemplified below embodiment, the present invention is described in more detail.It should be appreciated that
Described herein specific examples are only used to explain the present invention, is not intended to limit the present invention.
Embodiment 1
A kind of Al-Si composites for Electronic Packaging, the mass percent of the ingredient contained and each ingredient are as follows:
Si is 60%, surplus Al；
The purity of the Si be >=99.59wt.%, 20 μm of median；
The purity of the Al be >=99.59wt.%, 18 μm of median；
A kind of preparation method of the Al-Si composites for Electronic Packaging, comprising the following steps:
Step 1: preheated mold
Mold is preheated to 300 DEG C, preheating time 1h, the mold after being preheated；
Step 2: fine aluminium jacket and powder preheating
According to the ratio.Raw material powder is weighed after mixing by raw material powder to be fitted into the aluminium jacket of wall thickness 0.3mm,
In, aluminium jacket does not bind, is preheated to 300 DEG C, keeps the temperature 10min, the package aluminium material after being preheated；
Step 3: compacting
Before compacting, mould inner surface is lubricated using graphite oil, after the package aluminium material after preheating is placed in preheating
Mold in, mold and punching head and package aluminium material contact position place one layer of aluminium sheet, aluminium sheet with a thickness of 0.3mm, in 900MPa
Under hot pressing is carried out to powder, pressure maintaining 10s obtains hot pressing billet, hot pressing billet having a size of
Step 4: vacuum-sintering
The fine aluminium jacket for removing hot pressing billet surface, is put into Al for hot pressing billet2O3Vacuum sintering furnace is placed in crucible
In, vacuum sintering furnace is evacuated to 10-3Pa is warming up to 900 DEG C with the heating rate of 5 DEG C/min, keeps the temperature 2h, make element powders
Between occur diffusion and sufficiently reaction, generate uniform formation；After heat preservation, room temperature is cooled to the furnace, obtain for electronic seal
The Al-Si composites of dress.
Al-Si composites manufactured in the present embodiment for Electronic Packaging, after tested, when mold temperature is 350 DEG C, material
The relative density of material reaches 99.8%, and thermal conductivity reaches 115W/ (mK), material room temperature to 150 DEG C of mean thermal expansion coefficients
It is 9.90 × 10-6℃-1。
The microscopic structure of the Al-Si composites for Electronic Packaging of this example preparation is shown in Fig. 1, as can be seen from Figure 1 aluminium
It is mutually in semicontinuous net distribution, while inside, there are the biggish hole of portion size, the semicontinuous grid distribution of aluminium phase facilitates
The promotion of thermal conductivity, while the presence of hole increases interface resistance, and there are air for pore interior, reduce the thermal conductivity of alloy
Rate.
Embodiment 2
A kind of Al-Si composites for Electronic Packaging, the mass percent of the ingredient contained and each ingredient are as follows:
Si is 60%, surplus Al；
The purity of the Si be >=99.59wt.%, 20 μm of median；
The purity of the Al be >=99.59wt.%, 18 μm of median；
A kind of preparation method of the Al-Si composites for Electronic Packaging, comprising the following steps:
Step 1: preheated mold
Mold is preheated to 300 DEG C, preheating time 1h, the mold after being preheated；
Step 2: fine aluminium jacket and powder preheating
According to the ratio, raw material powder is weighed after mixing by raw material powder to be fitted into the aluminium jacket of wall thickness 0.3mm,
In, aluminium jacket does not bind, is preheated to 300 DEG C, keeps the temperature 10min, the package aluminium material after being preheated；
Step 3: compacting
Before compacting, mould inner surface is lubricated using graphite oil, after the package aluminium material after preheating is placed in preheating
Mold in, mold and punching head and package aluminium material contact position place one layer of aluminium sheet, aluminium sheet with a thickness of 0.3mm, in 900MPa
Under hot pressing is carried out to powder, pressure maintaining 10s obtains hot pressing billet, hot pressing billet having a size of
Step 4: vacuum-sintering
The fine aluminium jacket for removing hot pressing billet surface, is put into Al for hot pressing billet2O3Vacuum sintering furnace is placed in crucible
In, vacuum sintering furnace is evacuated to 10-3Pa is warming up to 850 DEG C with the heating rate of 5 DEG C/min, keeps the temperature 2h, make element powders
Between occur diffusion and sufficiently reaction, generate uniform formation；After heat preservation, room temperature is cooled to the furnace, obtain for electronic seal
The Al-Si composites of dress.
After tested, when sintering temperature is 850 DEG C, the relative density of the Al-Si composites for Electronic Packaging reaches
99.6%, thermal conductivity reaches 128W/ (mK).Al-Si composites room temperature to 150 DEG C of the evenly heat for Electronic Packaging is swollen
Swollen coefficient is 9.85 × 10-6℃-1
Embodiment 3
A kind of Al-Si composites for Electronic Packaging, the mass percent of the ingredient contained and each ingredient are as follows:
Si is 50%, surplus Al；
The purity of the Si be >=99.59wt.%, 20 μm of median；
The purity of the Al be >=99.59wt.%, 18 μm of median；
A kind of preparation method of the Al-Si composites for Electronic Packaging, comprising the following steps:
Step 1: preheated mold
Mold is preheated to 350 DEG C, preheating time 1h, the mold after being preheated；
Step 2: fine aluminium jacket and powder preheating
According to the ratio, raw material powder is weighed after mixing by raw material powder to be fitted into the aluminium jacket of wall thickness 0.3mm,
In, aluminium jacket does not bind, is preheated to 300 DEG C, keeps the temperature 10min, the package aluminium material after being preheated；
Step 3: compacting
Before compacting, mould inner surface is lubricated using graphite oil, after the package aluminium material after preheating is placed in preheating
Mold in, mold and punching head and package aluminium material contact position place one layer of aluminium sheet, aluminium sheet with a thickness of 0.3mm, in 900MPa
Under hot pressing is carried out to powder, pressure maintaining 10s obtains hot pressing billet, hot pressing billet having a size of
Step 4: vacuum-sintering
The fine aluminium jacket for removing hot pressing billet surface, is put into Al for hot pressing billet2O3Vacuum sintering furnace is placed in crucible
In, vacuum sintering furnace is evacuated to 10-3Pa is warming up to 900 DEG C with the heating rate of 5 DEG C/min, keeps the temperature 2h, make element powders
Between occur diffusion and sufficiently reaction, generate uniform formation；After heat preservation, room temperature is cooled to the furnace, obtain for electronic seal
The Al-Si composites of dress.
After tested, the relative density of Al-50wt%Si composite material is 98%, and thermal conductivity reaches 101W/ (mK).For
The Al-Si composites room temperature of Electronic Packaging to 150 DEG C of mean thermal expansion coefficients be 11.5 × 10-6℃-1。
The microscopic structure of the Al-Si composites for Electronic Packaging of this example preparation is shown in Fig. 2, as can be seen from Figure 2 aluminium
Mutually be in continuous net-shaped distribution, at the same it is internal there are a large amount of larger-size holes, hole number seriously reduce the cause of material
Density, the semicontinuous grid distribution of aluminium phase facilitates the promotion of thermal conductivity, while the presence of hole increases interface resistance, and hole
There are air inside gap, reduce the thermal conductivity of alloy.
Embodiment 4
A kind of Al-Si composites for Electronic Packaging, the mass percent of the ingredient contained and each ingredient are as follows:
Si is 60%, surplus Al；
The purity of the Si be >=99.59wt.%, 20 μm of median；
The purity of the Al be >=99.59wt.%, 18 μm of median；
A kind of preparation method of the Al-Si composites for Electronic Packaging, comprising the following steps:
Step 1: preheated mold
Mold is preheated to 350 DEG C, preheating time 1h, the mold after being preheated；
Step 2: fine aluminium jacket and powder preheating
According to the ratio.Raw material powder is weighed after mixing by raw material powder to be fitted into the aluminium jacket of wall thickness 0.3mm,
In, aluminium jacket does not bind, is preheated to 300 DEG C, keeps the temperature 10min, the package aluminium material after being preheated；
Step 3: compacting
Before compacting, mould inner surface is lubricated using graphite oil, after the package aluminium material after preheating is placed in preheating
Mold in, mold and punching head and package aluminium material contact position place one layer of aluminium sheet, aluminium sheet with a thickness of 0.3mm, in 900MPa
Under hot pressing is carried out to powder, pressure maintaining 10s obtains hot pressing billet, hot pressing billet having a size of
Step 4: vacuum-sintering
The fine aluminium jacket for removing hot pressing billet surface, is put into Al for hot pressing billet2O3Vacuum sintering furnace is placed in crucible
In, vacuum sintering furnace is evacuated to 10-3Pa is warming up to 900 DEG C with the heating rate of 5 DEG C/min, keeps the temperature 2h, make element powders
Between occur diffusion and sufficiently reaction, generate uniform formation；After heat preservation, room temperature is cooled to the furnace, obtain for electronic seal
The Al-Si composites of dress.
After tested, the relative density of Al-60wt%Si composite material is up to 99.8%, and thermal conductivity reaches 110W/
(m·K).Al-Si composites room temperature to 150 DEG C of the mean thermal expansion coefficients for Electronic Packaging are 10.8 × 10-6℃-1。
The microscopic structure of the Al-Si composites for Electronic Packaging of this example preparation is shown in Fig. 3, as can be seen from Figure 3 aluminium
It is in mutually continuous net-shaped distribution, there are individual holes, the consistency of material to effectively improve for material internal, while the continuous grids of aluminium phase
Distribution facilitates the promotion of thermal conductivity.
Embodiment 5
A kind of Al-Si composites for Electronic Packaging, the mass percent of the ingredient contained and each ingredient are as follows:
Si is 70%, surplus Al；
The purity of the Si be >=99.59wt.%, 20 μm of median；
The purity of the Al be >=99.59wt.%, 18 μm of median；
A kind of preparation method of the Al-Si composites for Electronic Packaging, comprising the following steps:
Step 1: preheated mold
Mold is preheated to 350 DEG C, preheating time 1h, the mold after being preheated；
Step 2: fine aluminium jacket and powder preheating
According to the ratio.Raw material powder is weighed after mixing by raw material powder to be fitted into the aluminium jacket of wall thickness 0.3mm,
In, aluminium jacket does not bind, is preheated to 300 DEG C, keeps the temperature 10min, the package aluminium material after being preheated；
Step 3: compacting
Before compacting, mould inner surface is lubricated using graphite oil, after the package aluminium material after preheating is placed in preheating
Mold in, mold and punching head and package aluminium material contact position place one layer of aluminium sheet, aluminium sheet with a thickness of 0.3mm, in 900MPa
Under hot pressing is carried out to powder, pressure maintaining 10s obtains hot pressing billet, hot pressing billet having a size of
Step 4: vacuum-sintering
The fine aluminium jacket for removing hot pressing billet surface, is put into Al for hot pressing billet2O3Vacuum sintering furnace is placed in crucible
In, vacuum sintering furnace is evacuated to 10-3Pa is warming up to 900 DEG C with the heating rate of 5 DEG C/min, keeps the temperature 2h, make element powders
Between occur diffusion and sufficiently reaction, generate uniform formation；After heat preservation, room temperature is cooled to the furnace, obtain for electronic seal
The Al-Si composites of dress.
After tested, the relative density of Al-70wt%Si composite material reaches 99.5%, and thermal conductivity reaches 117W/ (mK).
Al-Si composites room temperature to 150 DEG C of the mean thermal expansion coefficients for Electronic Packaging are 9.71 × 10-6℃-1。
The microscopic structure of the Al-Si composites for Electronic Packaging of this example preparation is shown in Fig. 4, as can be seen from Figure 4 aluminium
It is mutually in semicontinuous net distribution, silicon mutually has part and is connected, while inside, there are the biggish hole of portion size, the heat of material is swollen
Swollen coefficient is mainly influenced by the Si content of material, and Si content is higher, and thermal expansion coefficient is lower, and the semicontinuous grid of aluminium phase is distributed with
Help the promotion of thermal conductivity, while the presence of hole increases interface resistance, and there are air for pore interior, reduce alloy
Thermal conductivity.
Embodiment 6
A kind of Al-Si composites for Electronic Packaging, the mass percent of the ingredient contained and each ingredient are as follows:
Si is 60%, surplus Al；
The purity of the Si be 99.59wt.%, 30 μm of median；
The purity of the Al be 99.5wt.%, 30 μm of median；
A kind of preparation method of the Al-Si composites for Electronic Packaging, comprising the following steps:
Step 1: preheated mold
Mould inner surface is lubricated using graphite oil, the mold for smearing graphite oil is preheated to 400 DEG C, preheating time
Mold for 0.5h, after being preheated；
Step 2: fine aluminium jacket and powder preheating
According to the ratio, it weighs raw material powder after mixing by raw material powder to be fitted into the aluminium jacket of wall thickness 0.5mm, preheat
To 250 DEG C, 30min, the package aluminium material after being preheated are kept the temperature；
Step 3: compacting
Package aluminium material after preheating is placed in the mold after preheating, is put in mold and punching head and package aluminium material contact position
Set one layer of aluminium sheet, aluminium sheet with a thickness of 0.5mm, hot pressing is carried out to powder at 1100MPa, pressure maintaining 5s obtains hot pressing billet, heat
The size of green compact ingot is
Step 4: vacuum-sintering
The fine aluminium jacket for removing hot pressing billet surface, is put into Al for hot pressing billet2O3Vacuum sintering furnace is placed in crucible
In, vacuum sintering furnace is evacuated to 10-3After Pa, 750 DEG C are warming up to 1 DEG C/min heating rate, 4h is kept the temperature, makes element powder
Diffusion and sufficiently reaction occur between end, generates uniform formation；After heat preservation, room temperature is cooled to the furnace, obtain for electronics
The Al-Si composites of encapsulation.
Embodiment 7
A kind of Al-Si composites for Electronic Packaging, the mass percent of the ingredient contained and each ingredient are as follows:
Si is 60%, surplus Al；
The purity of the Si be 99.59wt.%, 30 μm of median；
The purity of the Al be 99.5wt.%, 30 μm of median；
A kind of preparation method of the Al-Si composites for Electronic Packaging, comprising the following steps:
Step 1: preheated mold
Mould inner surface is lubricated using graphite oil, the mold for smearing graphite oil is preheated to 450 DEG C, preheating time
Mold for 0.5h, after being preheated；
Step 2: fine aluminium jacket and powder preheating
According to the ratio, it weighs raw material powder after mixing by raw material powder to be fitted into the aluminium jacket of wall thickness 0.1mm, preheat
To 400 DEG C, 5min, the package aluminium material after being preheated are kept the temperature；
Step 3: compacting
Package aluminium material after preheating is placed in the mold after preheating, is put in mold and punching head and package aluminium material contact position
Set one layer of aluminium sheet, aluminium sheet with a thickness of 0.1mm, hot pressing is carried out to powder at 850MPa, pressure maintaining 30s obtains hot pressing billet, heat
The size of green compact ingot is
Step 4: vacuum-sintering
The fine aluminium jacket for removing hot pressing billet surface, is put into Al for hot pressing billet2O3Vacuum sintering furnace is placed in crucible
In, vacuum sintering furnace is evacuated to 10-2After Pa, 1000 DEG C are warming up to 3 DEG C/min heating rate, 1h is kept the temperature, makes element
Diffusion and sufficiently reaction occur between powder, generates uniform formation；After heat preservation, room temperature is cooled to the furnace, obtain for electricity
The Al-Si composites of son encapsulation.
The present invention is to be described by embodiment, but do not limit the invention, referring to description of the invention, institute
Other variations of disclosed embodiment, as being readily apparent that for this field professional person, such variation should belong to this
Within the scope of the claim of invention limits.
Claims (9)
1. a kind of Al-Si composites for Electronic Packaging, which is characterized in that this is used for the Al-Si composites of Electronic Packaging
The mass percent of the ingredient and each ingredient that contain are as follows: Si 50-70%, surplus Al；
The purity of the Si be >=99.59wt.%, 10-30 μm of median；
The purity of the Al be >=99.5wt.%, 10-30 μm of median.
2. being used for the Al-Si composites of Electronic Packaging as described in claim 1, which is characterized in that described is used for electronic seal
Relative density >=95% of the Al-Si composites of dress, thermal conductivity are (100-128) W/ (mK), room temperature to 150 DEG C of evenly heats
The coefficient of expansion is 9.3 × 10-6℃-1-12.5×10-6℃-1。
3. the preparation method of the Al-Si composites of any of claims 1 or 2 for Electronic Packaging, which is characterized in that including
Following steps:
Step 1: preheated mold
Mold is preheated to 300-450 DEG C, the mold after being preheated；
Step 2: fine aluminium jacket and powder preheating
According to the ratio, it weighs raw material powder after mixing by raw material powder to be fitted into the aluminium jacket of wall thickness 0.1-0.5mm, preheat
To 250-400 DEG C, 5-30min, the package aluminium material after being preheated are kept the temperature；
Step 3: compacting
Package aluminium material after preheating is placed in the mold after preheating, places one in mold and punching head and package aluminium material contact position
Layer aluminium sheet, carries out hot pressing to powder at 800MPa-1100MPa, obtains hot pressing billet；
Step 4: vacuum-sintering
Hot pressing billet is put into crucible and is placed in vacuum sintering furnace, vacuum sintering furnace is evacuated to≤10-1Pa, with 1-5
DEG C/min heating rate is warming up to 750-1000 DEG C, 1-4h is kept the temperature, room temperature is cooled to the furnace, obtains the aluminium silicon for Electronic Packaging
Composite material.
4. the preparation method for the Al-Si composites of Electronic Packaging as claimed in claim 3, which is characterized in that described
In step 1, the preheating, soaking time 0.5h-2h.
5. the preparation method for the Al-Si composites of Electronic Packaging as claimed in claim 3, which is characterized in that described
In step 3, the hot pressing, dwell time 5-60s.
6. the preparation method for the Al-Si composites of Electronic Packaging as claimed in claim 3, which is characterized in that described
In step 3, before compacting, mold is lubricated using lubricant.
7. the preparation method for the Al-Si composites of Electronic Packaging as claimed in claim 3, which is characterized in that described
In step 3, in pressing process, the preheating temperature of the package aluminium material after preheating is 300 DEG C, and the preheating temperature of mold is 300
DEG C -450 DEG C, pressing pressure 900MPa.
8. the preparation method for the Al-Si composites of Electronic Packaging as claimed in claim 3, which is characterized in that described
In step 4, the crucible is high-temperature crucible.
9. the preparation method for the Al-Si composites of Electronic Packaging as claimed in claim 3, which is characterized in that described
In step 4, hot pressing billet is put into Al2O3It is placed in vacuum sintering furnace in crucible, is evacuated to 10-3Pa, heating rate
For 5 DEG C/min.
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