CN108300925A - A kind of METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING and preparation method thereof - Google Patents
A kind of METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING and preparation method thereof Download PDFInfo
- Publication number
- CN108300925A CN108300925A CN201711466693.3A CN201711466693A CN108300925A CN 108300925 A CN108300925 A CN 108300925A CN 201711466693 A CN201711466693 A CN 201711466693A CN 108300925 A CN108300925 A CN 108300925A
- Authority
- CN
- China
- Prior art keywords
- weight
- parts
- powder
- metal
- matrix material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C30/00—Alloys containing less than 50% by weight of each constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/05—Mixtures of metal powder with non-metallic powder
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/001—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Powder Metallurgy (AREA)
Abstract
The present invention provides a kind of METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGINGs, calculate in percentage by weight, are prepared using the following raw material：40 80 parts by weight of aluminium powder, 10 30 parts by weight of titanium valve, 28 parts by weight of quartz sand, 7 15 parts by weight of molybdenum powder, 15 25 parts by weight of magnesium powder, 5 10 parts by weight of galapectite nanometer, 14 parts by weight of nano-titanium dioxide.Compared with prior art, the present invention is using aluminium powder, titanium valve, quartz sand, molybdenum powder, magnesium powder, galapectite nanometer, nano-titanium dioxide as raw material, each ingredient interaction influences each other, improve the intensity and wearability of the METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING of preparation, with intensity height, the good feature of wearability.
Description
Technical field
The present invention relates to food technology fields more particularly to a kind of METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING and preparation method thereof.
Background technology
Electronic package material refers to the seal of integrated circuit, not only there is mechanical support and environmental protection to make chip
With making it avoid the pollution and erosion of the steam in air, impurity and various chemical atmospheres, to enable IC chip
Play consistently normal electric function.Encapsulating material plays the heat resistance or even reliability of electronic device and circuit very important
Effect.Now, electronic package material and as an important branch in semicon industry relates generally to chemistry, electricity
A variety of subjects such as, thermodynamics, machinery and process equipment.
In the prior art, application No. is 201611081541.7 Chinese patent literatures to report a kind of microelectronic chip envelope
Dress processing material, it is composed of the following components：Polyurethanes, urea-formaldehyde resin, butyl acrylate, methyl methacrylate
Ester, phenol-formaldehyde resin modified, methyl isobutyl carbinol, tallow base dihydroxy ethyl amine oxide, N-Methyl pyrrolidone, amyl propionate,
Diethylene glycol ether, line borate, dibenzofurans, hexadecane bromide, imidazoline, ammonium fluosilicate, dolomite powder, nitridation titanium valve
It is end, Plumbous Fluoride powder, titania powder, calcirm-fluoride powder, zinc stannate, polythiophene, ammonium polyphosphate, p-cresol, three sweet
Two tricaprylate of alcohol, stearic acid macrogol ester, tributyl 2-acetylcitrate, ethylene glycol monoisobutyl ether, sulfenamide promote
Agent, 2- thiol benzothiazoles.It reports application No. is 200710099992.8 Chinese patent literature and a kind of preparing AL/ALN
The method of electronic package material, belongs to technical field of electronic encapsulation.Processing step is:Use gel casting or injection moulding
Prepare the mixed-powder or magnesium alloy powder green body of MG powder and AL powder；Green body is 100 DEG C -500 DEG C and non-oxide gas in temperature
Organic matter is excluded under atmosphere；Make green body obtained in the previous step in temperature at 600 DEG C -900 DEG C, nitrogen partial pressure is 1KPA-10MPA's
It is sintered -120 hours 30 minutes in atmosphere.Advantage is.AL/ALN composite electron encapsulating materials are finally obtained, the N's of the material
Mass fraction amount is 3%-30%.Meanwhile the thermal conductivity of the AL/ALN composite materials of preparation is met in 100W/MK or more
The demand of electronic product radiating.Realize the electronic package material of the highly thermally conductive low thermal expansion of manufacture of low cost.
But the intensity of the encapsulating material of above-mentioned report needs to be further improved.
Invention content
Present invention solves the technical problem that being to provide a kind of METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING and preparation method thereof, intensity
Height, wearability are good.
In view of this, the present invention provides a kind of METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING, calculate in percentage by weight, using such as
It is prepared by lower raw material：Aluminium powder 40-80 parts by weight, titanium valve 10-30 parts by weight, quartz sand 2-8 parts by weight, molybdenum powder 7-15 parts by weight, magnesium
Powder 15-25 parts by weight, galapectite nanometer 5-10 parts by weight, nano-titanium dioxide 1-4 parts by weight.
Preferably, aluminium powder 50-80 parts by weight.
Preferably, titanium valve 10-20 parts by weight.
Preferably, quartz sand 4-8 parts by weight.
Preferably, molybdenum powder 9-15 parts by weight.
Preferably, molybdenum powder 10-13 parts by weight.
Preferably, magnesium powder 20-25 parts by weight.
Preferably, galapectite nanometer 5-8 parts by weight.
Preferably, nano-titanium dioxide 1-3 parts by weight.
Correspondingly, the present invention also provides a kind of preparation method of METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING, include the following steps：By aluminium
Powder 40-80 parts by weight, titanium valve 10-30 parts by weight, quartz sand 2-8 parts by weight, molybdenum powder 7-15 parts by weight, magnesium powder 15-25 parts by weight,
Galapectite nanometer 5-10 parts by weight, the mixing of nano-titanium dioxide 1-4 parts by weight, roast 2 hours in a hydrogen atmosphere, and grinding obtains
To mixed-powder；The mixed-powder is placed in mold, dry, then compression moulding keeps the temperature 1 hour at 500 DEG C, heats up
1 hour is kept the temperature to 1000 DEG C, room temperature is down to, obtains METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING.
The present invention provides a kind of METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING, calculates, is prepared using the following raw material in percentage by weight：
Aluminium powder 40-80 parts by weight, titanium valve 10-30 parts by weight, quartz sand 2-8 parts by weight, molybdenum powder 7-15 parts by weight, magnesium powder 15-25 weight
Part, galapectite nanometer 5-10 parts by weight, nano-titanium dioxide 1-4 parts by weight.Compared with prior art, the present invention is with aluminium powder, titanium
Powder, quartz sand, molybdenum powder, magnesium powder, galapectite nanometer, nano-titanium dioxide are raw material, and each ingredient interaction influences each other,
The intensity and wearability of the METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING of preparation are improved, there is intensity height, the good feature of wearability.
Specific implementation mode
For a further understanding of the present invention, the preferred embodiment of the invention is described with reference to embodiment, still
It should be appreciated that these descriptions are only the feature and advantage further illustrated the present invention, rather than to the claims in the present invention
Limitation.
The embodiment of the invention discloses a kind of METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGINGs, calculate in percentage by weight, using as follows
It is prepared by raw material：Aluminium powder 40-80 parts by weight, titanium valve 10-30 parts by weight, quartz sand 2-8 parts by weight, molybdenum powder 7-15 parts by weight, magnesium powder
15-25 parts by weight, galapectite nanometer 5-10 parts by weight, nano-titanium dioxide 1-4 parts by weight.
Preferably, aluminium powder 50-80 parts by weight, titanium valve 10-20 parts by weight, quartz sand 4-8 parts by weight, molybdenum powder 9-15
Parts by weight, molybdenum powder 10-13 parts by weight, magnesium powder 20-25 parts by weight, galapectite nanometer 5-8 parts by weight, nano-titanium dioxide 1-3 weights
Measure part.
Correspondingly, the present invention also provides a kind of preparation method of METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING, include the following steps：By aluminium
Powder 40-80 parts by weight, titanium valve 10-30 parts by weight, quartz sand 2-8 parts by weight, molybdenum powder 7-15 parts by weight, magnesium powder 15-25 parts by weight,
Galapectite nanometer 5-10 parts by weight, the mixing of nano-titanium dioxide 1-4 parts by weight, roast 2 hours in a hydrogen atmosphere, and grinding obtains
To mixed-powder；The mixed-powder is placed in mold, dry, then compression moulding keeps the temperature 1 hour at 500 DEG C, heats up
1 hour is kept the temperature to 1000 DEG C, room temperature is down to, obtains METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING.
The present invention provides a kind of METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING, calculates, is prepared using the following raw material in percentage by weight：
Aluminium powder 40-80 parts by weight, titanium valve 10-30 parts by weight, quartz sand 2-8 parts by weight, molybdenum powder 7-15 parts by weight, magnesium powder 15-25 weight
Part, galapectite nanometer 5-10 parts by weight, nano-titanium dioxide 1-4 parts by weight.Compared with prior art, the present invention is with aluminium powder, titanium
Powder, quartz sand, molybdenum powder, magnesium powder, galapectite nanometer, nano-titanium dioxide are raw material, and each ingredient interaction influences each other,
The intensity and wearability of the METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING of preparation are improved, there is intensity height, the good feature of wearability.
For a further understanding of the present invention, technical solution provided by the invention is carried out specifically with reference to embodiment
Bright, protection scope of the present invention is not limited by the following examples.
Raw material used in the embodiment of the present invention is purchased in market.
Embodiment 1
A kind of METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING, is calculated in percentage by weight, is prepared using the following raw material：
40 parts by weight of aluminium powder, 30 parts by weight of titanium valve, 2 parts by weight of quartz sand, 15 parts by weight of molybdenum powder, 15 parts by weight of magnesium powder, angstrom
10 parts by weight of Lip river stone nanometer, 1 parts by weight of nano-titanium dioxide.
Preparation process：
By 40 parts by weight of aluminium powder, 30 parts by weight of titanium valve, 2 parts by weight of quartz sand, 15 parts by weight of molybdenum powder, 15 parts by weight of magnesium powder,
10 parts by weight of galapectite nanometer, the mixing of 1 parts by weight of nano-titanium dioxide, roast 2 hours in a hydrogen atmosphere, and grinding is mixed
Close powder；
The mixed-powder is placed in mold, dry, then compression moulding keeps the temperature 1 hour at 500 DEG C, is warming up to
1000 DEG C keep the temperature 1 hour, are down to room temperature, obtain METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING.
Embodiment 2
A kind of METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING, is calculated in percentage by weight, is prepared using the following raw material：
80 parts by weight of aluminium powder, 10 parts by weight of titanium valve, 8 parts by weight of quartz sand, 7 parts by weight of molybdenum powder, 25 parts by weight of magnesium powder, Ai Luo
5 parts by weight of stone nanometer, 4 parts by weight of nano-titanium dioxide.
Preparation process：
By 80 parts by weight of aluminium powder, 10 parts by weight of titanium valve, 8 parts by weight of quartz sand, 7 parts by weight of molybdenum powder, 25 parts by weight of magnesium powder, angstrom
5 parts by weight of Lip river stone nanometer, the mixing of 4 parts by weight of nano-titanium dioxide, roast 2 hours in a hydrogen atmosphere, and grinding obtains mixed powder
End；
The mixed-powder is placed in mold, dry, then compression moulding keeps the temperature 1 hour at 500 DEG C, is warming up to
1000 DEG C keep the temperature 1 hour, are down to room temperature, obtain METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING.
Embodiment 3
A kind of METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING, is calculated in percentage by weight, is prepared using the following raw material：
60 parts by weight of aluminium powder, 20 parts by weight of titanium valve, 5 parts by weight of quartz sand, 12 parts by weight of molybdenum powder, 20 parts by weight of magnesium powder, angstrom
8 parts by weight of Lip river stone nanometer, 3 parts by weight of nano-titanium dioxide.
Preparation process：
By 60 parts by weight of aluminium powder, 20 parts by weight of titanium valve, 5 parts by weight of quartz sand, 12 parts by weight of molybdenum powder, 20 parts by weight of magnesium powder,
8 parts by weight of galapectite nanometer, the mixing of 3 parts by weight of nano-titanium dioxide, roast 2 hours in a hydrogen atmosphere, and grinding is mixed
Powder；
The mixed-powder is placed in mold, dry, then compression moulding keeps the temperature 1 hour at 500 DEG C, is warming up to
1000 DEG C keep the temperature 1 hour, are down to room temperature, obtain METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING.
The explanation of above example is only intended to facilitate the understanding of the method and its core concept of the invention.It should be pointed out that pair
For those skilled in the art, without departing from the principle of the present invention, the present invention can also be carried out
Some improvements and modifications, these improvement and modification are also fallen within the protection scope of the claims of the present invention.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest range caused.
Claims (10)
1. a kind of METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING, which is characterized in that calculate, prepared using the following raw material in percentage by weight：
Aluminium powder 40-80 parts by weight, titanium valve 10-30 parts by weight, quartz sand 2-8 parts by weight, molybdenum powder 7-15 parts by weight, magnesium powder 15-25
Parts by weight, galapectite nanometer 5-10 parts by weight, nano-titanium dioxide 1-4 parts by weight.
2. METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING according to claim 1, which is characterized in that aluminium powder 50-80 parts by weight.
3. METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING according to claim 1, which is characterized in that titanium valve 10-20 parts by weight.
4. METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING according to claim 1, which is characterized in that quartz sand 4-8 parts by weight.
5. METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING according to claim 1, which is characterized in that molybdenum powder 9-15 parts by weight.
6. METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING according to claim 1, which is characterized in that molybdenum powder 10-13 parts by weight.
7. METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING according to claim 1, which is characterized in that magnesium powder 20-25 parts by weight.
8. METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING according to claim 1, which is characterized in that galapectite nanometer 5-8 parts by weight.
9. METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING according to claim 1, which is characterized in that nano-titanium dioxide 1-3 parts by weight.
10. a kind of preparation method of METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING, which is characterized in that include the following steps：
By aluminium powder 40-80 parts by weight, titanium valve 10-30 parts by weight, quartz sand 2-8 parts by weight, molybdenum powder 7-15 parts by weight, magnesium powder 15-
25 parts by weight, galapectite nanometer 5-10 parts by weight, the mixing of nano-titanium dioxide 1-4 parts by weight, it is small to roast 2 in a hydrogen atmosphere
When, grinding obtains mixed-powder；
The mixed-powder is placed in mold, dry, then compression moulding keeps the temperature 1 hour at 500 DEG C, is warming up to 1000
DEG C heat preservation 1 hour, be down to room temperature, obtain METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711466693.3A CN108300925A (en) | 2017-12-27 | 2017-12-27 | A kind of METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711466693.3A CN108300925A (en) | 2017-12-27 | 2017-12-27 | A kind of METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108300925A true CN108300925A (en) | 2018-07-20 |
Family
ID=62867949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711466693.3A Pending CN108300925A (en) | 2017-12-27 | 2017-12-27 | A kind of METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108300925A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101615600A (en) * | 2009-07-08 | 2009-12-30 | 中国航空工业第一集团公司北京航空材料研究院 | A kind of high-thermal conductivity electronic packaging material and preparation method thereof |
| CN105543610A (en) * | 2015-12-22 | 2016-05-04 | 中国航空工业集团公司北京航空材料研究院 | Preparing method of electronic packaging material |
| CN105568068A (en) * | 2015-12-22 | 2016-05-11 | 中国航空工业集团公司北京航空材料研究院 | Electronic packaging material preparation method |
| CN105603262A (en) * | 2015-12-22 | 2016-05-25 | 中国航空工业集团公司北京航空材料研究院 | Preparation method of electronic packaging material |
| CN106011551A (en) * | 2016-07-13 | 2016-10-12 | 蚌埠市时代电子有限公司 | Nanometer yttria doping vario-property aluminum magnesium alloy material for automobile electronic packaging and preparing method of nanometer yttria doping vario-property aluminum magnesium alloy material |
| CN106811662A (en) * | 2016-12-30 | 2017-06-09 | 东莞市佳乾新材料科技有限公司 | A kind of preparation method of the electronic package material with radiation-resisting functional |
| CN106987741A (en) * | 2017-03-01 | 2017-07-28 | 东莞市佳乾新材料科技有限公司 | A kind of method for preparing powder metallurgy of metal-based compound electronics encapsulating material |
-
2017
- 2017-12-27 CN CN201711466693.3A patent/CN108300925A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101615600A (en) * | 2009-07-08 | 2009-12-30 | 中国航空工业第一集团公司北京航空材料研究院 | A kind of high-thermal conductivity electronic packaging material and preparation method thereof |
| CN105543610A (en) * | 2015-12-22 | 2016-05-04 | 中国航空工业集团公司北京航空材料研究院 | Preparing method of electronic packaging material |
| CN105568068A (en) * | 2015-12-22 | 2016-05-11 | 中国航空工业集团公司北京航空材料研究院 | Electronic packaging material preparation method |
| CN105603262A (en) * | 2015-12-22 | 2016-05-25 | 中国航空工业集团公司北京航空材料研究院 | Preparation method of electronic packaging material |
| CN106011551A (en) * | 2016-07-13 | 2016-10-12 | 蚌埠市时代电子有限公司 | Nanometer yttria doping vario-property aluminum magnesium alloy material for automobile electronic packaging and preparing method of nanometer yttria doping vario-property aluminum magnesium alloy material |
| CN106811662A (en) * | 2016-12-30 | 2017-06-09 | 东莞市佳乾新材料科技有限公司 | A kind of preparation method of the electronic package material with radiation-resisting functional |
| CN106987741A (en) * | 2017-03-01 | 2017-07-28 | 东莞市佳乾新材料科技有限公司 | A kind of method for preparing powder metallurgy of metal-based compound electronics encapsulating material |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102115655B (en) | Single component flexible epoxy sealant | |
| CN105074907B (en) | The manufacturing method of electronic component encapsulation resin sheet and electron device package body | |
| CN112480477B (en) | Surface modification method of spherical alumina for high-strength epoxy molding compound | |
| EP2963328A1 (en) | Heat insulating material and production method for same | |
| JP6403075B2 (en) | Semiconductor sealing resin composition and semiconductor device | |
| JP2018141052A (en) | Resin composition and resin-sealed type semiconductor device | |
| CN108300925A (en) | A kind of METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING and preparation method thereof | |
| CN106047247A (en) | Electromagnetic-radiation-resistant high-heat-conductive modified composite epoxy pouring sealant for LED displays | |
| JP2006265370A (en) | Epoxy resin composition for sealing optical semiconductor and optical semiconductor device | |
| CN110357050A (en) | The shaft-like beta phase silicon nitride raw powder's production technology such as a kind of | |
| CN106145890A (en) | A kind of ceramics ware for daily use handle binding agent | |
| CN107540378A (en) | A kind of preparation method of carborundum/aluminium composite material | |
| JP3989349B2 (en) | Electronic component sealing device | |
| JP5716426B2 (en) | RESIN MOLDED BODY, ITS MANUFACTURING METHOD, AND ELECTRONIC PART DEVICE | |
| KR102649336B1 (en) | Manufacturing method of aluminum nitride sintered body | |
| JP5005272B2 (en) | Semiconductor sealing resin composition and semiconductor device | |
| CN101955629B (en) | Epoxy resin composition capable of being used as semiconductor encapsulating material | |
| JP2958402B2 (en) | Silica filler for semiconductor resin encapsulation and method for producing the same | |
| TW201927898A (en) | Epoxy resin composition for encapsulation of semiconductor device and semiconductor device encapsulated using the same | |
| KR102274604B1 (en) | Melamine Resin Composition for Cleaning Semiconductor Mold | |
| JP3464125B2 (en) | Method for producing silica filler | |
| CN106496957A (en) | A kind of preparation of acrylic acid epoxy material | |
| JPH0321628A (en) | Epoxy resin composition and semiconductor device using same | |
| CN103665325A (en) | Epoxy resin and preparation method thereof | |
| CN105907349A (en) | Nanometer zirconium oxide modified composite epoxy pouring sealant for LED display screen |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180720 |