CN101600307A - Wiring board and manufacture method thereof - Google Patents
Wiring board and manufacture method thereof Download PDFInfo
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- CN101600307A CN101600307A CNA2008101098730A CN200810109873A CN101600307A CN 101600307 A CN101600307 A CN 101600307A CN A2008101098730 A CNA2008101098730 A CN A2008101098730A CN 200810109873 A CN200810109873 A CN 200810109873A CN 101600307 A CN101600307 A CN 101600307A
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Abstract
A kind of manufacture method of wiring board comprises, at first, provides a substrate, and it comprises that two conductive layers and are disposed at the insulating barrier between these conductive layers.Then, form a hydrophobic film on the conductive layer therein.Then, form a hole, it extends to another conductive layer from a conductive layer.Then, form a conduction connecting structure in hole, and conduction connecting structure is connected between these conductive layers.After forming conduction connecting structure, remove hydrophobic film.Afterwards, these conductive layers of patterning are to form two line layers.
Description
Technical field
The invention relates to a kind of wiring board and manufacture method thereof, and particularly relevant for a kind of wiring board and manufacture method thereof with at least two layers of line layer.
Background technology
The multilayer circuit board that has at least two layers of line layer now has conductivity through-hole structure (conductive through hole structure) usually, and this conductivity through-hole structure electrically connects the wherein two line layers of multilayer circuit board, so that these line layers can electrically conduct.The method that forms conductivity through-hole structure at present is to adopt machine drilling and the electroplates in hole processing procedure mostly, and after forming conductivity through-hole structure, the thickness that connects two copper metal layers of conductivity through-hole structure two ends can increase.Therefore, after conductivity through-hole structure forms, can carry out whole property etch process usually, the just so-called thick processing procedure (person also being arranged for subtracting copper wiring) that subtracts is to reduce the thickness of above-mentioned two copper metal layers.
Figure 1A to Fig. 1 E is the schematic flow sheet of the manufacture method of traditional a kind of multilayer circuit board.See also Figure 1A, at first, with the method for machine drilling, (Copper Clad Laminate CCL) forms a through hole (through hole) T1 on 110 at a copper clad laminate.Copper clad laminate 110 comprises a dielectric layer 112 and two layers of Copper Foil 114, and wherein these Copper Foils 114 are positioned on dielectric layer 112 relative two surfaces.
See also Figure 1B and Fig. 1 C, then, (Plating Through Hole, PTH), to form a conductivity through-hole structure 120 in through hole T1, wherein the electroplates in hole processing procedure may further comprise the steps to carry out the electroplates in hole processing procedure.
Please consult Figure 1B earlier, at first, carry out chemical plating, on the hole wall of through hole T1, to form a chemical copper layer 122.When carrying out chemical plating, chemical copper layer 122 also can be formed on these Copper Foils 114 comprehensively.
See also Fig. 1 C, then, electroplate,, and then form copper metal column 124 with deposited copper metal on the surface of chemical copper layer 122.So, conductivity through-hole structure 120 is formed.When electroplating, the copper metal also can be deposited on the chemical copper layer 122, and then forms two layers of thicker Copper Foil 114 ' of thickness.In other words, when forming conductivity through-hole structure 120, increase the thickness of these Copper Foils 114 simultaneously.
See also Fig. 1 C and Fig. 1 D, then, carry out etch process, to reduce the thickness of these Copper Foils 114 '.See also Fig. 1 E, after the thickness of these Copper Foils 114 ' reduces, carry out lithographic process, to form two copper wire layer 116.So far, a kind of multilayer circuit board 100 has been made and has been finished.
Yet whole the property etch process that thickness adopted of above-mentioned minimizing Copper Foil 114 ' is easy to generate the variation of stress, and then causes the size (dimension scale) of multilayer circuit board 100 to change.This can cause bad influence to the yield of multilayer circuit board 100, and then reduces the yield of multilayer circuit board 100.
Summary of the invention
The invention provides a kind of manufacture method of wiring board, to improve the yield of wiring board.
The invention provides a kind of wiring board, its manufacture method can improve the yield of wiring board.
The present invention proposes a kind of manufacture method of wiring board, comprises, at first, provides a substrate, and it comprises that one first conductive layer, one second conductive layer and are disposed at the insulating barrier between first conductive layer and second conductive layer.Then, on first conductive layer, form one first hydrophobic film (hydrophobic film).Then, form at least one hole, it extends to second conductive layer from first conductive layer.Then, form at least one conduction connecting structure in hole, wherein conduction connecting structure is connected between first conductive layer and second conductive layer.After forming conduction connecting structure, remove first hydrophobic film.Afterwards, patterning first conductive layer is to form one first line layer.
In one embodiment of this invention, the method for above-mentioned formation first hydrophobic film comprise liquid deposition (Liquid Phase Deposition, LPD) or molecular vapor deposition (Molecular Vapor Deposition, MVD).
In one embodiment of this invention, the above-mentioned method that removes first hydrophobic film comprises the dry-etching method, grinds or strikes off.In addition, above-mentioned dry-etching method comprises plasma etching method.
In one embodiment of this invention, the above-mentioned method that removes first hydrophobic film comprises and makes first hydrophobic film change one first hydrophilic film into.Then, first hydrophilic film is soaked in the etching soup.
In one embodiment of this invention, the method for above-mentioned formation conduction connecting structure comprises chemical plating and plating.
In one embodiment of this invention, also comprise, on second conductive layer, form one second hydrophobic film.After forming conduction connecting structure, remove second hydrophobic film.Then, patterning second conductive layer is to form one second line layer.
In one embodiment of this invention, the method for above-mentioned formation second hydrophobic film comprises liquid deposition or molecular vapor deposition.
In one embodiment of this invention, the above-mentioned method that removes second hydrophobic film comprises the dry-etching method, grinds or strikes off.Above-mentioned dry-etching method comprises plasma etching method.
In one embodiment of this invention, the above-mentioned method that removes second hydrophobic film comprises and makes second hydrophobic film change one second hydrophilic film into.Then, second hydrophilic film is soaked in the etching soup.
In one embodiment of this invention, aforesaid substrate comprises that also one is disposed at the internal layer circuit structure between first conductive layer and second conductive layer.
In one embodiment of this invention, also comprise, on first line layer, form at least one tertiary circuit layer.On second line layer, form at least one the 4th line layer.
The present invention proposes a kind of wiring board, and it has at least one hole.Wiring board comprises one first line layer, one second line layer, an insulating barrier and a conduction connecting structure.Insulating barrier is disposed between first line layer and second line layer, and wherein hole extends to second line layer from first line layer.Hole has a hole wall, and foraminous wall area is divided into the middle section of two fringe regions and between these fringe regions.Conduction connecting structure is disposed in the hole, and is connected between first line layer and second line layer, and wherein conduction connecting structure comprises a first metal layer and a metal cartridge.The first metal layer covers hole wall, and wherein the edge of the edge of the first metal layer and hole wall is overlapping in fact, and the first metal layer at the thickness of middle section greater than the thickness of the first metal layer at these fringe regions.The first metal layer is connected between metal cartridge and the hole wall.
In one embodiment of this invention, relative two ora terminalis of above-mentioned metal cartridge in fact with the imbricate of hole wall.
In one embodiment of this invention, there is an interface between above-mentioned metal cartridge and the first metal layer.
In one embodiment of this invention, above-mentioned metal cartridge is a solid cylinder, and conduction connecting structure fills up hole.
In one embodiment of this invention, above-mentioned metal cartridge is a cylindrical body, and metal cartridge comprises at least one second metal level, and the first metal layer is connected between second metal level and the hole wall.
In one embodiment of this invention, above-mentioned wiring board comprises that also one is disposed at the internal layer circuit structure between first line layer and second line layer.
In one embodiment of this invention, above-mentioned wiring board also comprises at least one tertiary circuit layer and at least one the 4th line layer that is disposed on second line layer that is disposed on first line layer.
The present invention is because of adopting first hydrophobic film and second hydrophobic film, so the present invention can form conduction connecting structure under the situation that does not increase by first conductive layer and second the two thickness of conductive layer.So, the present invention need not carry out etch process (for example subtracting thick processing procedure) reducing the thickness of conductive layer, avoiding the variation of the stress that aforementioned etch process produced, and then promotes the yield of wiring board.
For above-mentioned feature and advantage of the present invention can be become apparent, embodiment more cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Figure 1A to Fig. 1 E is the schematic flow sheet of the manufacture method of traditional a kind of multilayer circuit board.
Fig. 2 is the generalized section of a kind of wiring board of one embodiment of the invention.
Fig. 3 A to Fig. 3 G is the schematic flow sheet of the manufacture method of the wiring board among Fig. 2.
Fig. 4 is the generalized section of a kind of wiring board of another embodiment of the present invention.
Fig. 5 A to Fig. 5 F is the schematic flow sheet of the manufacture method of the wiring board among Fig. 4.
The main element symbol description
100: multilayer circuit board
110: copper clad laminate
112: dielectric layer
114,114 ': Copper Foil
116: copper wire layer
120: conductivity through-hole structure
122: the chemical copper layer
124: the copper metal column
200,300: wiring board
202,302: substrate
210,310: the first line layers
210 ', 310 ': first conductive layer
220,320: the second line layers
220 ', 320 ': second conductive layer
230,330a, 330b, 354: insulating barrier
240,340: conduction connecting structure
242,342: the first metal layer
244,344: metal cartridge
244a: second metal level
250a: first hydrophobic film
250b: second hydrophobic film
350: the internal layer circuit structure
352a, 352b: line layer
B1, B2: interface
H1, H2: hole
S1, S2: hole wall
T1: through hole
Z1, Z3: fringe region
Z2, Z4: middle section
Embodiment
Fig. 2 is the generalized section of a kind of wiring board of one embodiment of the invention.See also Fig. 2, wiring board 200 has at least one hole H1, and wiring board 200 comprises one first line layer 210, one second line layer 220, an insulating barrier 230 and a conduction connecting structure 240.First line layer 210 and second line layer 220 are disposed at relative two surfaces of insulating barrier 230 respectively, and promptly insulating barrier 230 is disposed between first line layer 210 and second line layer 220.In addition, wiring board 200 shown in Figure 2 can be considered a kind of double-sided wiring board (double sided circuit board) or also can be used as the interior wherein one deck internal layer circuit substrate of multilayer circuit board.
Hole H1 extends to second line layer 220 from first line layer 210, and hole H1 can be blind hole (blind via) or through hole (as shown in Figure 2).Hole H1 has a hole wall S1, and hole wall S1 divides into two fringe region Z1 and a middle section Z2, and wherein middle section Z2 is between these fringe regions Z1.
Relative two ora terminalis of metal cartridge 244 in fact with the imbricate of hole wall S1, so the first metal layer 242, metal cartridge 244 and hole wall S1 three's edge is overlapped in fact.In addition, in the present embodiment, metal cartridge 244 comprises two layer of second metal level 244a, and wherein the second metal level 244a covers the surface of the first metal layer 242, and promptly the first metal layer 242 is connected between the second metal level 244a and the hole wall S1.
Hence one can see that, and metal cartridge 244 is a cylindrical body.In other words, metal cartridge 244 is a kind of hollow cylinders that do not fill up hole H1.But, in a unshowned embodiment, metal cartridge 244 can also be a solid cylinder, and conduction connecting structure 240 can fill up hole H1.
Hole H1 shown in Figure 2 is a through hole, so conduction connecting structure 240 can be a kind of conductivity through-hole structure.Yet because hole H1 can also be a blind hole, therefore in other unshowned embodiment, conduction connecting structure 240 also can be a kind of conductive blind hole structures (conductive blind viastructure).So, emphasize that at this conduction connecting structure 240 shown in Figure 2 is only for illustrating, and non-limiting the present invention.
In other unshowned embodiment, wiring board 200 can also also comprise two solder masks, and wherein these solder masks cover first line layer 210 and second line layer 220 respectively.In addition, because wiring board 200 shown in Figure 2 can be used as the wherein one deck internal layer circuit substrate in the multilayer circuit board, therefore wiring board 200 can also comprise two layers or more line layer, and these line layers can be disposed at respectively on first line layer 210 with second line layer 220 on, promptly first line layer 210 and second line layer 220 are disposed between these line layers.
Below mainly introduce the structure of wiring board 200, next will cooperate Fig. 3 A to Fig. 3 F, to describe the manufacture method of wiring board 200 in detail.
Fig. 3 A to Fig. 3 G is the schematic flow sheet of the manufacture method of the wiring board among Fig. 2.See also Fig. 3 A, about the manufacture method of wiring board 200, at first, provide a substrate 202, it comprises one first conductive layer 210 ', one second conductive layer 220 ' and an insulating barrier 230.Insulating barrier 230 is disposed between first conductive layer 210 ' and second conductive layer 220 '.Substrate 202 can be a copper clad laminate, therefore first conductive layer 210 ' and second conductive layer 220 ' the two can be Copper Foil, and insulating barrier 230 can be film (prepreg) that has solidified or the resin that has solidified.
See also Fig. 3 B, then, go up formation one first hydrophobic film 250a, and go up formation one second hydrophobic film 250b at second conductive layer 220 ' at first conductive layer 210 '.The first hydrophobic film 250a and the second hydrophobic film 250b have good hydrophobicity (hydrophobicity), promptly the two surface of the first hydrophobic film 250a and the second hydrophobic film 250b is difficult for being attached by liquid such as the water or the aqueous solution, wherein the material of the first hydrophobic film 250a and the second hydrophobic film 250b can comprise fluorine and carbon, and the method that forms the first hydrophobic film 250a and the second hydrophobic film 250b comprises liquid deposition or molecular vapor deposition.
Above-mentioned molecular vapor deposition can form thickness and be about 10 dusts, even less than the first hydrophobic film 250a and the second hydrophobic film 250b of 10 dusts, and molecular vapor deposition is to carry out in the reaction cavity (chamber) at low-pressure.The pressure of the reaction cavity when specifically, carrying out molecular vapor deposition is between 0.05 holder (torr) is held in the palm to 0.2.Therefore, utilize the formed first hydrophobic film 250a of molecular vapor deposition and the second hydrophobic film 250b to have thickness as thin as a wafer and the high characteristic of purity.
In addition, during the conducting molecule vapour deposition, can be by adjusting some process parameter (parameter), temperature of reaction pressure or substrate 202 etc. for example, improve the hydrophobicity of the first hydrophobic film 250a and the second hydrophobic film 250b, and then liquid such as the water or the aqueous solution almost can't be attached on the surface of the first hydrophobic film 250a and the second hydrophobic film 250b.
See also Fig. 3 C, then, form at least one hole H1, it extends to second conductive layer 220 ' from first conductive layer 210 '.Hole H1 shown in Fig. 3 C runs through substrate 202 and the through hole that forms, and the method that forms hole H1 can be machine drilling processing procedure or laser drill processing procedure.Yet in other unshowned embodiment, hole H1 can also be the blind hole that does not run through substrate 202.
See also Fig. 3 D, then, form at least one conduction connecting structure 240 in hole H1, wherein conduction connecting structure 240 is connected between first conductive layer 210 ' and second conductive layer 220 ', and conduction connecting structure 240 can utilize the electroplates in hole processing procedure to form.That is to say that the method that forms conduction connecting structure 240 can comprise chemical plating and plating.
Hold above-mentionedly, about forming the method for conduction connecting structure 240, at first, carry out chemical plating, to form the first metal layer 242.Specifically, when carrying out chemical plating, can on the hole wall S1 of hole H1, form the Seed Layer (not shown) of a layer thickness below 50 nanometers earlier.Then, by the chemical reaction between this Seed Layer and the chemical agent, redox reaction for example, the first metal layer 242 is able to form on Seed Layer, wherein the material of the first metal layer 242 can be that copper, aluminium or other have the material of satisfactory electrical conductivity, and the material of Seed Layer can be palladium, manganese, chromium, platinum, carbon or its combination.
Then, carry out second time electroplating, forming two layer of second metal level 244a, and then form metal cartridge 244.In the present embodiment, plating can also only be carried out once or more than the secondary, so metal cartridge 244 can only comprise one deck second metal level 244a, and promptly metal cartridge 244 can be one deck second metal level 244a.
Attached by liquid such as the water or the aqueous solution because the two surface of the first hydrophobic film 250a and the second hydrophobic film 250b is difficult, even liquid can't be attached, therefore when carrying out chemical plating and electroplating, the electroplate liquid that chemical agent that chemical plating adopted and plating are adopted is difficult to attach first conductive layer 210 ' and second conductive layer 220 ', so that the first metal layer 242 only is formed among the hole H1 with metal cartridge 244, and can not cover the first hydrophobic film 250a and the second hydrophobic film 250b.Therefore, the thickness of first conductive layer 210 ' and second conductive layer 220 ' can't increase haply.
See also Fig. 3 D and Fig. 3 E, after forming conduction connecting structure 240, remove the first hydrophobic film 250a and the second hydrophobic film 250b.Pass through molecular vapor deposition, the two thickness of the first hydrophobic film 250a and the second hydrophobic film 250b can be less than 10 dusts, and the method that therefore removes the first hydrophobic film 250a and the second hydrophobic film 250b can adopt the dry-etching method, grind, strikes off or other easy machining process.Wherein, the dry-etching method comprises plasma etching method.For example, the method that removes the first hydrophobic film 250a and the second hydrophobic film 250b can be ground with sand paper, or strikes off with scraper.
Except removing the first hydrophobic film 250a and the second hydrophobic film 250b, present embodiment can also change the first hydrophobic film 250a into first hydrophilic film, and changes the second hydrophobic film 250b into second hydrophilic film.The above-mentioned method that changes the first hydrophobic film 250a and the second hydrophobic film 250b into first hydrophilic film and second hydrophilic film for example is the back reaction of molecular vapor deposition.
By the back reaction of this molecular vapor deposition, originally be difficult for to be changed into first hydrophilic film and second hydrophilic film that is very easily bedewed by water by the first hydrophobic film 250a that liquid attached such as the water or the aqueous solution and the second hydrophobic film 250b.The back reaction of relevant molecular vapor deposition can be with reference to some disclosed documents, for example the Micro Total AnalysisSystems 2004 that published of Royal Society of Chemistry, wherein the 288th to 290 page content.
See also Fig. 3 E and Fig. 3 F, removing the first hydrophobic film 250a and the second hydrophobic film 250b, or the first hydrophobic film 250a and the second hydrophobic film 250b changed into after first hydrophilic film and second hydrophilic film, patterning first conductive layer 210 ', to form first line layer 210, and patterning second conductive layer 220 ', to form second line layer 220, wherein the method for patterning first conductive layer 210 ' and second conductive layer 220 ' can adopt lithographic process.
Originally the two thickness of the first hydrophobic film 250a and the second hydrophobic film 250b is less than 10 dusts, and the thickness of first hydrophilic film after the transformation and second hydrophilic film is equally also less than 10 dusts.Secondly, the structure of first hydrophilic film and second hydrophilic film is invaded by liquid such as the water or the aqueous solution easily, and the change of the structure of first hydrophilic film and second hydrophilic film is comparatively fragile.Therefore, in the process of patterning first conductive layer 210 ' and second conductive layer 220 ', first hydrophilic film and second hydrophilic film can be soaked in the etching soup.So, first hydrophilic film and the easy etched soup of second hydrophilic film destroy, and then are removed.
Because the two thickness of first conductive layer 210 ' and second conductive layer 220 ' does not increase, so the thickness of first conductive layer 210 ' is equivalent to the thickness of first line layer 210, and the thickness of second conductive layer 220 ' is equivalent to the thickness of second line layer 220.In other words, the thickness of first conductive layer 210 ' equals the thickness of first line layer 210 in fact, and the thickness of second conductive layer 220 ' equals the thickness of second line layer 220 in fact.
After forming first line layer 210 and second line layer 220, basically, the wiring board 200 that can be considered a kind of double-sided wiring board has been made and has been finished.In other unshowned embodiment, more can form two layers of solder mask on wiring board 200, wherein one deck solder mask covers first line layer 210, and another layer solder mask covers second line layer 220.In addition, wiring board 200 can also be as the wherein one deck internal layer circuit substrate in the multilayer circuit board.
See also Fig. 3 G, after just forming first line layer 210 and second line layer 220, can on first line layer 210, form at least one tertiary circuit layer 260a further, and on second line layer 220, form at least one the 4th line layer 260b.That is to say, on first line layer 210 and second line layer 220, form one deck, two layers or more line layer.
Therefore, in the embodiment shown in Fig. 3 G, wiring board 200 can also comprise tertiary circuit layer 260a and the 4th line layer 260b.In addition, the method that forms tertiary circuit layer 260a and the 4th line layer 260b can adopt Layer increasing method (build-up) or overlay technique common in the present wiring board processing procedure, so do not introduce further in this formation method to tertiary circuit layer 260a and the 4th line layer 260b.
Please consult Fig. 3 A once more, what deserves to be mentioned is, in other unshowned embodiment, substrate 202 can be the wherein part of multilayer circuit board.Specifically, second conductive layer 220 ' shown in Fig. 3 A can be one deck internal layer circuit layer in the multilayer circuit board, and relative two faces of second conductive layer 220 ' are insulated layer 230 and another insulating barrier (not shown) covers.Therefore, be that present embodiment can omit the step that forms the second hydrophobic film 250b, and can make conduction connecting structure 240 become conductive blind hole structures like this under wherein a part of condition of multilayer circuit board at substrate 202.
Fig. 4 is the generalized section of a kind of wiring board of another embodiment of the present invention.See also Fig. 4, the wiring board 300 of present embodiment has at least one hole H2, and wiring board 300 comprises one first line layer 310, one second line layer 320, two insulating barrier 330a and 330b, a conduction connecting structure 340 and an internal layer circuit structure 350.
Insulating barrier 330a, 330b and internal layer circuit structure 350 all are disposed between first line layer 310 and second line layer 320, and internal layer circuit structure 350 is disposed between insulating barrier 330a and the insulating barrier 330b.Hole H2 extends to second line layer 320 from first line layer 310, and hole H2 is through hole, as shown in Figure 4.Hole H2 has a hole wall S2, and hole wall S2 divides into two fringe region Z3 and a middle section Z4, and wherein middle section Z4 is between these fringe regions Z3.
Internal layer circuit structure 350 comprises that multilayer line layer 352a, 352b and are disposed at the insulating barrier 354 between line layer 352a and the line layer 352b, and in other unshowned embodiment, internal layer circuit structure 350 can also only comprise one deck line layer, and promptly internal layer circuit structure 350 can be one deck internal layer circuit layer.
Fig. 5 A to Fig. 5 F is the schematic flow sheet of the manufacture method of the wiring board among Fig. 4.Because the manufacture method of the wiring board 300 of present embodiment is similar to the manufacture method of the wiring board 200 of previous embodiment, the therefore following difference part that will highlight present embodiment and previous embodiment.
See also Fig. 5 A, about the manufacture method of wiring board 300, at first, provide a substrate 302, it comprises one first conductive layer 310 ', one second conductive layer 320 ', insulating barrier 330a, 330b and internal layer circuit structure 350.Insulating barrier 330a, 330b and internal layer circuit structure 350 all are disposed between first conductive layer 310 ' and second conductive layer 320 '.
See also Fig. 5 B, then, go up the formation first hydrophobic film 250a at first conductive layer 310 ', and at second conductive layer, 320 ' the last second hydrophobic film 250b that forms, the method that wherein forms the first hydrophobic film 250a and the second hydrophobic film 250b can comprise liquid deposition or molecular vapor deposition.
See also Fig. 5 C, then, form at least one hole H2, it extends to second conductive layer 320 ' from first conductive layer 310 '.The method that forms hole H2 can be machine drilling processing procedure or laser drill processing procedure, and hole H2 runs through substrate 302 and the through hole that forms.
See also Fig. 5 D, then, form at least one conduction connecting structure 340 in hole H2, wherein conduction connecting structure 340 is connected between first conductive layer 310 ' and second conductive layer 320 ', and the method for formation conduction connecting structure 340 can comprise chemical plating and plating.
See also Fig. 5 D and Fig. 5 E, after forming conduction connecting structure 340, remove the first hydrophobic film 250a and the second hydrophobic film 250b, the method that wherein removes the first hydrophobic film 250a and the second hydrophobic film 250b can adopt the dry-etching method, grind, strikes off or other easy machining process.
Wherein, the dry-etching method comprises plasma etching method.For example, the method that removes the first hydrophobic film 250a and the second hydrophobic film 250b can be ground with sand paper, or strikes off with scraper.In addition, also can change the first hydrophobic film 250a into first hydrophilic film, and change the second hydrophobic film 250b into second hydrophilic film.
See also Fig. 5 F, removing the first hydrophobic film 250a and the second hydrophobic film 250b, or the first hydrophobic film 250a and the second hydrophobic film 250b changed into after first hydrophilic film and second hydrophilic film, patterning first conductive layer 310 ', to form first line layer 310, and patterning second conductive layer 320 ', to form second line layer 320, wherein the method for patterning first conductive layer 310 ' and second conductive layer 320 ' can adopt lithographic process.
In etch process, it is destroyed because first hydrophilic film and the easy etched soup of second hydrophilic film are invaded, therefore after first hydrophilic film and second hydrophilic film were soaked in the etching soup, first hydrophilic film and second hydrophilic film were removed.
After forming first line layer 310 and second line layer 320, basically, the wiring board 300 that can be considered a kind of multilayer circuit board has been made and has been finished, and in other unshowned embodiment, can also form two layers of solder mask on wiring board 300, wherein one deck solder mask covers first line layer 310, and another layer solder mask covers second line layer 320.
In sum, by hydrophobic film (for example first hydrophobic film and second hydrophobic film), the present invention can form conduction connecting structures such as conductive blind hole structures or conductivity through-hole structure under the situation that does not increase conductive layer (for example first conductive layer and second conductive layer) thickness.Therefore, the present invention need not form line layer (for example first line layer and second line layer) before, and conductive layer is carried out etch process to reduce the thickness of conductive layer.So, the present invention can avoid the variation of the stress that aforementioned etch process produces, and then prevents that the size of wiring board from changing, and promotes the yield of wiring board simultaneously.
Secondly, because the present invention need not carry out etch process to conductive layer before forming line layer, so the present invention can only carry out one time etch process in the process that forms line layer.Compared to conventional art, the present invention can reduce the number of times that carries out etch process, with the demand of minimizing etching agent, and then the manufacturing cost of reduction wiring board.Simultaneously, the present invention more can reduce the generation of etching waste liquor, to meet the environmental protection demand.
Though the present invention with some embodiment openly as above; right its is not in order to limit the present invention; have in the technical field under any and know the knowledgeable usually; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is when looking being as the criterion that claims define.
Claims (16)
1. the manufacture method of a wiring board comprises:
One substrate is provided, and it comprises that one first conductive layer, one second conductive layer and are disposed at the insulating barrier between this first conductive layer and this second conductive layer;
On this first conductive layer, form one first hydrophobic film;
Form at least one hole, it extends to this second conductive layer from this first conductive layer;
Form at least one conduction connecting structure in this hole, wherein this conduction connecting structure is connected between this first conductive layer and this second conductive layer;
After forming this conduction connecting structure, remove this first hydrophobic film; And
This first conductive layer of patterning is to form one first line layer.
2. the processing procedure of wiring board according to claim 1, the method that wherein forms this conduction connecting structure comprises chemical plating and plating.
3. the processing procedure of wiring board according to claim 1 also comprises:
On this second conductive layer, form one second hydrophobic film;
After forming this conduction connecting structure, remove this second hydrophobic film; And
This second conductive layer of patterning is to form one second line layer.
4. the processing procedure of wiring board according to claim 3, the method that wherein forms this first hydrophobic film and this second hydrophobic film comprises liquid deposition or molecular vapor deposition.
5. according to the processing procedure of claim 1 or 3 described wiring boards, the method that wherein removes this hydrophobic film comprises the dry-etching method, grinds or strikes off.
6. the processing procedure of wiring board according to claim 5, the dry-etching method that wherein removes this hydrophobic film comprises plasma etching method.
7. according to the processing procedure of claim 1 or 3 described wiring boards, the method that wherein removes this hydrophobic film comprises:
Make this hydrophobic film change a hydrophilic film into; And
This hydrophilic film is soaked in the etching soup.
8. the processing procedure of wiring board according to claim 1, wherein this substrate comprises that also one is disposed at the internal layer circuit structure between this first conductive layer and this second conductive layer.
9. the processing procedure of wiring board according to claim 1 also comprises:
On this first line layer, form at least one tertiary circuit layer; And
On this second line layer, form at least one the 4th line layer.
10. a wiring board has at least one hole, and this wiring board comprises:
One first line layer;
One second line layer;
One insulating barrier, be disposed between this first line layer and this second line layer, wherein this hole extends to this second line layer from this first line layer, and this hole has a hole wall, and this foraminous wall area is divided into the middle section of two fringe regions and between those fringe regions;
One conduction connecting structure is disposed in this hole, and is connected between this first line layer and this second line layer, and wherein this conduction connecting structure comprises:
One the first metal layer covers this hole wall, and wherein the edge of the edge of this first metal layer and this hole wall is overlapping in fact, and this first metal layer at the thickness of this middle section greater than the thickness of this first metal layer at those fringe regions; And
One metal cartridge, this first metal layer are connected between this metal cartridge and this hole wall.
11. wiring board according to claim 10, wherein relative two ora terminalis of this metal cartridge in fact with the imbricate of this hole wall.
12. wiring board according to claim 10 wherein has an interface between this metal cartridge and this first metal layer.
13. wiring board according to claim 10, wherein this metal cartridge is a solid cylinder, and this conduction connecting structure fills up this hole.
14. wiring board according to claim 10, wherein this metal cartridge is a cylindrical body, and this metal cartridge comprises at least one second metal level, and this first metal layer is connected between this second metal level and this hole wall.
15. wiring board according to claim 10 comprises that also one is disposed at the internal layer circuit structure between this first line layer and this second line layer.
16. wiring board according to claim 10 also comprises at least one tertiary circuit layer and at least one the 4th line layer that is disposed on this second line layer that is disposed on this first line layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101098730A CN101600307B (en) | 2008-06-05 | 2008-06-05 | Circuit board |
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|---|---|---|---|
| CN2008101098730A CN101600307B (en) | 2008-06-05 | 2008-06-05 | Circuit board |
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| CN201110340768.XA Division CN102510683B (en) | 2008-06-05 | 2008-06-05 | Method for manufacturing circuit board |
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| CN101600307A true CN101600307A (en) | 2009-12-09 |
| CN101600307B CN101600307B (en) | 2012-05-23 |
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| CN2008101098730A Active CN101600307B (en) | 2008-06-05 | 2008-06-05 | Circuit board |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104717845A (en) * | 2013-12-13 | 2015-06-17 | 深圳崇达多层线路板有限公司 | Technological method for outer layer circuit board resin hole plugging of multi-layer circuit board |
| CN106163102A (en) * | 2015-04-02 | 2016-11-23 | 富葵精密组件(深圳)有限公司 | Flexible PCB and preparation method thereof |
| CN110191582A (en) * | 2019-04-30 | 2019-08-30 | 东莞联桥电子有限公司 | A kind of production technology of single layer mirror-surface aluminum base board |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5340947A (en) * | 1992-06-22 | 1994-08-23 | Cirqon Technologies Corporation | Ceramic substrates with highly conductive metal vias |
| JP4330486B2 (en) * | 2004-05-07 | 2009-09-16 | 日東電工株式会社 | Method for manufacturing double-sided printed wiring board |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104717845A (en) * | 2013-12-13 | 2015-06-17 | 深圳崇达多层线路板有限公司 | Technological method for outer layer circuit board resin hole plugging of multi-layer circuit board |
| CN106163102A (en) * | 2015-04-02 | 2016-11-23 | 富葵精密组件(深圳)有限公司 | Flexible PCB and preparation method thereof |
| CN106163102B (en) * | 2015-04-02 | 2018-11-23 | 鹏鼎控股(深圳)股份有限公司 | Flexible circuit board and preparation method thereof |
| CN110191582A (en) * | 2019-04-30 | 2019-08-30 | 东莞联桥电子有限公司 | A kind of production technology of single layer mirror-surface aluminum base board |
| CN110191582B (en) * | 2019-04-30 | 2021-09-07 | 东莞联桥电子有限公司 | Production process of single-layer mirror aluminum substrate |
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| CN101600307B (en) | 2012-05-23 |
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