CN101599750A - Surface wave device encapsulation structure - Google Patents
Surface wave device encapsulation structure Download PDFInfo
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- CN101599750A CN101599750A CNA2009100320032A CN200910032003A CN101599750A CN 101599750 A CN101599750 A CN 101599750A CN A2009100320032 A CNA2009100320032 A CN A2009100320032A CN 200910032003 A CN200910032003 A CN 200910032003A CN 101599750 A CN101599750 A CN 101599750A
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- tellite
- surface wave
- wave device
- chip
- electrode
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Abstract
A kind of surface wave device encapsulation structure belongs to technical field of electronic components.Comprise tellite, chip, protection cap and shell; chip be located on the tellite and with the tellite electrical coupling; the protection cap is combined on the tellite; and lid chamber that should the protection cap is corresponding with described chip, and shell is combined on the tellite and described protection cap covered and protects.Advantage: can adapt to the reliability that flexible design changes and can also ensure surface wave device; Can shorten production process and simplify technology, and the volume of device is dwindled with accepted product percentage and significantly improved; The design of components and parts production firm can be broken away from the situation of the restriction that is subjected to ceramic package production firm; The surface wave device structure of recommending can satisfy the surface patch installation requirement.
Description
Technical field
The invention belongs to technical field of electronic components, be specifically related to a kind of surface wave device encapsulation structure.
Background technology
As the known reason in boundary already, surface wave device is to utilize surface wave that the signal of telecommunication is carried out the device of simulation process, and its frequency range is about 10
7～10
9Conspicuous, its operation principle is: electrical signal conversion becomes acoustical signal (surface acoustic wave), arrive the reception interdigital transducer after in medium, propagating certain distance, convert the signal of telecommunication again to, in the conversion transmittance process of electricity-sound-electricity, carry out processing, thereby obtain output signal the input signal simulation process.
The form of expression of the structure of the surface wave device in the prior art main but be not limited to have following two kinds: the one, the metal shell encapsulating structure; The 2nd, the ceramic package encapsulating structure.By contrast, to have a volume little and be suitable for the strong point of current circuit surface mounting technology because of it for the surface wave device of ceramic package encapsulating structure, thereby be subjected to thinking highly of of industry.But, because the surface wave device of ceramic packaging structure need be made harsh design and sinter molding to ceramic package, and sinter molding must realize by means of the kiln of special use, and technical process is long, product qualified rate is relatively low, thereby cause following technical problem: the one, the device cost height, the cost of the production firm of surface wave device product often is controlled by the production firm of ceramic package, because of the device price can not independence and Unpredictability constitute puzzled to market competition; The 2nd, the structural design of surface wave device is subjected to the restriction of ceramic package structure equally.Therefore, the manufacturing of surface wave device and the restriction of using the ceramic package production technology that all is subjected to specialty.
In view of above-mentioned factor,, so,,,, thereby can't be suitable for surface mount process again because of chip is to be connected with pin by welding wire because of bulky though have cheap strong point if adopt the surface wave device of metal shell encapsulating structure.
Therefore, surface wave device is broken away from perplexed because of ceramic packaging structure is existing at present the technical problem of getting solution into long-term that pay close attention to and phase of industry, the technical scheme that the applicant will introduce below produces under this background.
Summary of the invention
Task of the present invention be to provide a kind of need not to use the ceramic package encapsulation and use embody flexible design, device reliability height, cost significantly reduces and volume is further dwindled and can satisfy the surface wave device encapsulation structure of surface mount process requirement.
Task of the present invention is finished like this; a kind of surface wave device encapsulation structure; comprise tellite, chip, protection cap and shell; chip be located on the tellite and with the tellite electrical coupling; the protection cap is combined on the tellite; and lid chamber that should the protection cap is corresponding with described chip, and shell is combined on the tellite and described protection cap covered and protects.
In a specific embodiment of the present invention, a surface of described tellite constitutes one group of first electrode, and another surface of tellite constitutes one group of second electrode, the electrical coupling each other of first, second electrode, has the chip output electrode on the described chip, chip output electrode and the described first electrode electrical coupling.
In another specific embodiment of the present invention, offer plated-through hole on the described tellite, plated-through hole and described first, second electrode electrical coupling.
In another specific embodiment of the present invention, described chip attach is fixed on the position placed in the middle of a side surface of described tellite, and with chip output electrode on the chip and the described first electrode electrical coupling, described conductive filament is a Si-Al wire by conductive filament.
In another specific embodiment of the present invention, the surface of described first, second electrode and plated-through hole all is coated with the gold layer.
In also specific embodiment of the present invention, constitute between the roof in the lid chamber of described protection cap and the described chip and be used for the self-propagating space of confession surface wave.
More of the present invention and in specific embodiment, described tellite is epoxy resin double-sided copper-clad printed circuit board (PCB) or polytetrafluoroethylene double-sided printed-circuit board.
In of the present invention and then specific embodiment, shell integrally envelope outside described protection cap.
Of the present invention again more and in specific embodiment, described shell is an epoxy package.
The advantage of technical scheme provided by the present invention is: substituted the ceramic package in the prior art with tellite (PCB substrate), thereby can adapt to the reliability that flexible design changes and can also ensure surface wave device; Owing to abandoned ceramic package, therefore not only can shorten production process and simplify technology, and the volume of device is dwindled with accepted product percentage and significantly improved; The design of components and parts production firm can be broken away from the situation of the restriction that is subjected to ceramic package production firm; The surface wave device structure of recommending can satisfy the surface patch installation requirement.
Description of drawings
Fig. 1 is a specific embodiment figure of surface wave device structure of the present invention.
Fig. 2 is the cutaway view of Fig. 1.
Embodiment
Embodiment 1:
Ask for an interview Fig. 1 and Fig. 2, thickness be the material of 0.5mm be epoxy resin layer and the two sides of epoxy resin layer be covered with copper and by etching process be to a side current icon location status towards on a side surface cover that the copper layer erodes away one group of first electrode 11 and to the opposite side surface promptly towards under the copper layer that covers of a side surface erode away one group of second electrode 12, thereby constitute illustrated tellite 1.In addition, first, second electrode 11,12 also can be described as the positive and negative electrode, and the surface of first, second electrode 11,12 all is coated with gold, is coated with the plated-through hole 13 enforcement electrical ties of gold between first, second electrode 11,12 on demand by hole wall.As concrete execution mode, the quantity of one group of first, second electricity level 11,12 obviously is not subjected to the restriction of quantity shown in Figure 1.Because, according to the character of device or claim the difference of purposes and difference, for example, polarity, four utmost points, sextupole and the ends of the earth, or the like, therefore, can not be construed as limiting technical scheme of the present invention with embodiment.
Tellite 1 towards on the position placed in the middle on a surface (is example with the shown position state) adopt adhesive (also can claim binding agent) bonding chip 2, chip output electrode 21 on the chip 2 is linked by conductive filament and aforesaid first electrode 11, for conductive filament 5, preferably but not definitely adopt Si-Al wire with being limited to.Above corresponding to chip 2, the protection cap 3 that material is plastics is set; protect by protecting cap 3 to cover with chip 2 and with the solder joint that aforesaid conductive filament 5 is connected with first electrode 11; the wall thickness of protection cap 3 is 0.25mm; maintain the space between the roof in the lid chamber 31 of protection cap 3 and the chip 2, guarantee freely propagating of surface wave by the space.Preferred scheme is to adopt binding agent will protect the lower limb 32 and tellite 1 cementation of cap 3.As concrete execution mode, protection size dimension of cap 3 and wall thickness should decide by the size of chip 2 and size of devices, and for example the surface wave device size of using always at present has 5 * 5mm, 5 * 3.5mm, and 3.5 * 3.5mm, or the like.Therefore, can not be construed as limiting technical scheme of the present invention with embodiment equally.Fill the post of shell 4 by epoxy resin, utilize mould to pour outside protection cap 3, will protect cap 3 whole envelopes, and shell 4 combines with the upper surface of tellite 1 also.Resulting surface wave device of the present invention is suitable for surface mount process fully, volume only is the sixth of the surface wave device of the metal shell encapsulating structure in the prior art, and performance index for example amplitude-frequency characteristic is in full accord with the surface wave device of ceramic package encapsulating structure after tested.Therefore, technical scheme provided by the invention had both been dwindled volume significantly, saved raw material and shortened process time and reduced cost because of need not to adopt sintering process to make ceramic package, can make device production manufacturer break away from the situation of the restriction that is subjected to ceramic package supplier again, make autonomous Design flexible and changeable.Also positive effect of the present invention program is, surface wave device in the past by the ceramic package encapsulating structure, the main dependence on import of its ceramic package, price is higher, and the surface wave device of the not enough ceramic package encapsulating structure of the price of the surface wave device of structure of the present invention 1/3rd, thereby have desirable economy.
Embodiment 2:
Only use the material of tellite 1 instead the polytetrafluoroethylene double-sided printed-circuit board, all the other are all with the description to embodiment 1.
Claims (9)
1, a kind of surface wave device encapsulation structure; it is characterized in that comprising tellite (1), chip (2), protection cap (3) and shell (4); chip (2) be located at that tellite (1) is gone up and with tellite (1) electrical coupling; protection cap (3) is combined on the tellite (1); and the lid chamber (31) of this protection cap (3) is corresponding with described chip (2), and shell (4) is combined in to cover on the tellite (1) and with described protection cap (3) and protects.
2, surface wave device encapsulation structure according to claim 1, a surface that it is characterized in that described tellite (1) constitutes one group of first electrode (11), and another surface of tellite (1) constitutes one group of second electrode (12), first, second electrode (11,12) electrical coupling each other, has chip output electrode (21) on the described chip (2), chip output electrode (21) and described first electrode (11) electrical coupling.
3, surface wave device encapsulation structure according to claim 2 is characterized in that offering on the described tellite (1) plated-through hole (13), plated-through hole (13) and described first, second electrode (11,12) electrical coupling.
4, surface wave device encapsulation structure according to claim 2, it is characterized in that described chip (2) is pasted and fixed on the position placed in the middle of a side surface of described tellite (1), and with chip output electrode (21) on the chip (2) and described first electrode (11) electrical coupling, described conductive filament (5) is a Si-Al wire by conductive filament (5).
5, surface wave device encapsulation structure according to claim 3 is characterized in that the surface of described first, second electrode (11,12) and plated-through hole (13) all is coated with the gold layer.
6, surface wave device encapsulation structure according to claim 1 is characterized in that constituting between the roof in lid chamber (31) of described protection cap (3) and the described chip (3) and is used for for the self-propagating space of surface wave.
7,, it is characterized in that described tellite (1) is epoxy resin double-sided copper-clad printed circuit board (PCB) or polytetrafluoroethylene double-sided printed-circuit board according to the described surface wave device encapsulation structure of the arbitrary claim of claim 1 to 4.
8, surface wave device encapsulation structure according to claim 1, it is characterized in that shell (4) integrally envelope outside described protection cap (3).
9,, it is characterized in that described shell (4) is an epoxy package according to claim 1 or 8 described surface wave device encapsulation structures.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009100320032A CN101599750A (en) | 2009-06-16 | 2009-06-16 | Surface wave device encapsulation structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2009100320032A CN101599750A (en) | 2009-06-16 | 2009-06-16 | Surface wave device encapsulation structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101599750A true CN101599750A (en) | 2009-12-09 |
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ID=41421034
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2009100320032A Pending CN101599750A (en) | 2009-06-16 | 2009-06-16 | Surface wave device encapsulation structure |
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| Country | Link |
|---|---|
| CN (1) | CN101599750A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110849482A (en) * | 2019-11-20 | 2020-02-28 | 常熟市华通电子有限公司 | Sensor chip packaging process with pin plug-in structure |
| CN113411069A (en) * | 2021-06-03 | 2021-09-17 | 成都频岢微电子有限公司 | Bulk acoustic wave filter device and method for improving out-of-band rejection |
-
2009
- 2009-06-16 CN CNA2009100320032A patent/CN101599750A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110849482A (en) * | 2019-11-20 | 2020-02-28 | 常熟市华通电子有限公司 | Sensor chip packaging process with pin plug-in structure |
| CN110849482B (en) * | 2019-11-20 | 2021-07-09 | 常熟市华通电子有限公司 | Sensor chip packaging process with pin plug-in structure |
| CN113411069A (en) * | 2021-06-03 | 2021-09-17 | 成都频岢微电子有限公司 | Bulk acoustic wave filter device and method for improving out-of-band rejection |
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| C06 | Publication | ||
| PB01 | Publication | ||
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20091209 |