CN201846474U - Silicon microphone - Google Patents
Silicon microphone Download PDFInfo
- Publication number
- CN201846474U CN201846474U CN2010205574724U CN201020557472U CN201846474U CN 201846474 U CN201846474 U CN 201846474U CN 2010205574724 U CN2010205574724 U CN 2010205574724U CN 201020557472 U CN201020557472 U CN 201020557472U CN 201846474 U CN201846474 U CN 201846474U
- Authority
- CN
- China
- Prior art keywords
- board substrate
- wiring board
- silicon microphone
- metal
- conductive rubber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 31
- 239000010703 silicon Substances 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 37
- 239000000084 colloidal system Substances 0.000 claims abstract description 8
- 238000009413 insulation Methods 0.000 claims description 23
- 238000005538 encapsulation Methods 0.000 claims description 12
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 239000003292 glue Substances 0.000 claims description 5
- 239000000741 silica gel Substances 0.000 claims description 5
- 229910002027 silica gel Inorganic materials 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000037237 body shape Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
Images
Landscapes
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
Abstract
The utility model discloses a silicon microphone comprising an external package formed by a circuit board substrate and a metal shell; the package is provided with a sound hole communicated with the interior and exterior of the silicon microphone; an MEMS (Micro Electro Mechanical Systems) chip is arranged on the circuit board substrate in the package; furthermore, the circuit board substrate is mechanically connected with the metal shell by an insulating rubber layer; and the circuit board substrate is further provided with a metal layer that is conductively connected with the metal shell by a conductive colloid. By means of the design, the circuit board substrate is better mechanically connected with the metal shell by the insulating rubber layer, while the conductive colloid can well conductively combine the metal layer and the metal shell, therefore, the design ensures the reliability of both the mechanical connection and the electric connection, the electromagnetic shielding effect is good, the process is simple, and the cost is low.
Description
Technical field
The utility model relates to a kind of microphone, relates to a kind of application MEMS(Micro-Electro-Mechanical Systems specifically, MEMS (micro electro mechanical system)) silicon microphone of the MEMS acoustic-electro conversion chip made of technology.
Background technology
Along with electronic products such as mobile phone, notebook, hearing aids are more and more littler to the dimensional requirement of inner body, less, the quality of taking measurements greatly silicon microphone preferably is employed, this microphone inside is provided with uses MEMS(Micro-Electro-Mechanical Systems, MEMS (micro electro mechanical system)) the MEMS acoustic-electro conversion chip of technology making, chip exterior encapsulates.A kind of traditional silicon microphone encapsulation is to utilize a wiring board substrate and a metal shell to constitute, and the MEMS acoustic-electro conversion chip is installed on the inner wiring board substrate of encapsulation.In order to realize effectiveness preferably, generally the circuit base board is provided with metal conducting layer, and metal conducting layer can be arranged on PCB surface or inside, and metal shell can be connected to form a shielding cavity with the metal level conduction on the wiring board substrate.In the prior art, metal shell can realize that conduction is connected by dual mode with the metal level on the wiring board substrate, a kind of is directly to utilize conducting resinl that metal shell and wiring board substrate bonding are in the same place, this technology can realize being electrically connected preferably, but the bonding dynamics of conducting resinl is not enough, causes the mechanical strength of product not enough easily; Also having a kind of mode is in the outside of silicon microphone encapsulation a metallic enclosure to be set in addition, and obvious this structure has increased product size and manufacturing cost.
So, need design a kind of simplicity of design, practical, and the good silicon microphone structure of effectiveness.
The utility model content
Technical problem to be solved in the utility model provides a kind of simplicity of design, practical, and the good silicon microphone structure of effectiveness.
For solving the problems of the technologies described above, the technical solution of the utility model is: silicon microphone, comprise a wiring board substrate and the outer enclosure that metal-back constitutes, described encapsulation is provided with and is communicated with the inside and outside sound hole of silicon microphone, on the wiring board substrate of described encapsulation inside the MEMS chip is installed, and, described wiring board substrate and described metal-back are realized mechanical connection by the insulation glue-line, also be provided with metal level on the described wiring board substrate, described metal level realizes that by conductive rubber conduction is connected with described metal-back.
The improvement of the technical program is that described insulation glue-line is annular glue-line, and described conductive rubber is to be arranged at the metal level of described wiring board substrate and the point-like colloid between the described metal-back.
The improvement of the technical program is that described insulation glue-line and described conductive rubber interruption are arranged alternately between the metal level and described metal-back of described wiring board substrate.
The improvement of the technical program is that described wiring board substrate is square, and the described relatively wiring board substrate of described conductive rubber is symmetrically distributed.
The improvement of the technical program is that described conductive rubber is arranged at four bights of described wiring board substrate.
The improvement of the technical program is that described conductive rubber is arranged on the described wiring board substrate two opposite edges.
The improvement of the technical program is that described conductive rubber is a conductive silver paste.
The improvement of the technical program is that described insulation glue-line is insulating resin glue or insulation silica gel.
Owing to adopted technique scheme, silicon microphone, comprise a wiring board substrate and the outer enclosure that metal-back constitutes, described encapsulation is provided with and is communicated with the inside and outside sound hole of silicon microphone, on the wiring board substrate of described encapsulation inside the MEMS chip is installed, and described wiring board substrate and described metal-back are realized mechanical connection by the insulation glue-line, also be provided with metal level on the described wiring board substrate, described metal level realizes that by conductive rubber conduction is connected with described metal-back.Rely on this design, can realize mechanical connection preferably by the insulation glue-line between wiring board substrate and the metal-back, and conductive rubber can well well conduct electricity metal level and metal-back combination, this design has guaranteed the reliability of mechanical connection and the reliability of electrical connection simultaneously, effectiveness is good, and technology is simple, with low cost.
Description of drawings
Fig. 1 is the structural representation of the utility model embodiment one;
Fig. 2 is the local enlarged diagram at a place among Fig. 1;
Fig. 3 is the planar structure schematic diagram of the utility model embodiment one wiring board substrate;
Fig. 4 is the structural representation of the utility model embodiment two;
Fig. 5 is the planar structure schematic diagram of the utility model embodiment two circuit base boards.
Embodiment
Embodiment one
Explain the silicon microphone structure of the implementation case in conjunction with Fig. 1, Fig. 2 and Fig. 3, its body shape is square, the wiring board substrate 1 that resin material is a base material and square metal-back 2 have constituted the encapsulating structure of silicon microphone, and metal-back 2 is provided with and is communicated with the inside and outside sound hole 21 of silicon microphone; The IC device 3 that MEMS chip 4 is installed and is used for amplification signal on the wiring board substrate 1 of encapsulation inside, and, the openend of wiring board substrate 1 and metal-back 2 is realized mechanical connection by insulation glue-line 5, also be provided with metal level 11 on the wiring board substrate 1, metal level 11 realizes that by conductive rubber 6 conduction is connected with metal-back 2.Rely on this product structure, can realize mechanical connection preferably by the insulation glue-line between wiring board substrate and the metal-back, and conductive rubber can well be with metal level and the combination of metal-back conduction, this design has guaranteed the reliability of mechanical connection and the reliability of electrical connection simultaneously, effectiveness is good, and technology is simple, with low cost.
In the implementation case, metal level 11 is arranged on the inside of wiring board substrate 1, have ground connection and electromagnetic shielding action, metal level 11 can extend to by the metal aperture 13 of wiring board substrate 1 inside and form metal level 12 on the surface of wiring board substrate 1, conductive rubber 6 be arranged on the metal level 12 and and metal-back 2 bond together.
In the implementation case, insulation glue-line 5 is bonded between the openend of wiring board substrate 1 and metal-back 2 for annular glue-line, and conductive rubber 6 is to be arranged at the metal level 12 of wiring board substrate 1 and the point-like colloid between the described metal-back 2.And conductive rubber 6 relative wiring board substrates 1 are symmetrically distributed, and are arranged at four bights of wiring board substrate 1.This design can be so that adopt under the situation of less colloid and obtain effectiveness preferably, and can not take silicon microphone encapsulation volume inside.
In the implementation case, conductive rubber 6 is a conductive silver paste, and insulation glue-line 5 is insulating resin glue or insulation silica gel, can obtain mechanical adhesion intensity and electrical connection stability preferably simultaneously.
Embodiment two
Explain the silicon microphone structure of the implementation case in conjunction with Fig. 4 and Fig. 5.Compare with embodiment one, the insulation glue-line 5 of present embodiment and conductive rubber 6 interruptions are arranged alternately between the metal level and metal-back 2 of wiring board substrate 1.
In the implementation case, insulation glue- line 5 and 6 staggered interruptions of conductive rubber are bonded between the openend of wiring board substrate 1 and metal-back 2, and conductive rubber 6 is for being arranged at the metal level 12 of wiring board substrate 1 and the point-like colloid between the described metal-back 2.And conductive rubber 6 relative wiring board substrates 1 are symmetrically distributed, and are arranged on wiring board substrate 1 two opposite edges.This design can be so that adopt under the situation of less colloid and obtain effectiveness preferably, and can not take silicon microphone encapsulation volume inside.
In the implementation case, conductive rubber 6 is a conductive silver paste, and insulation glue-line 5 is insulating resin glue or insulation silica gel, can obtain mechanical adhesion intensity and electrical connection stability preferably simultaneously.
Under above-mentioned instruction of the present utility model; those skilled in the art can carry out various improvement and distortion on the basis of above-mentioned case study on implementation; and these improvement and distortion; all drop in the protection range of the present utility model; those skilled in the art should be understood that; above-mentioned specific descriptions are just better explained the purpose of this utility model, and protection range of the present utility model is limited by claim and equivalent thereof.
Claims (10)
1. silicon microphone, comprise a wiring board substrate and the outer enclosure that metal-back constitutes, described encapsulation is provided with and is communicated with the inside and outside sound hole of silicon microphone, on the wiring board substrate of described encapsulation inside the MEMS chip is installed, it is characterized in that: described wiring board substrate and described metal-back are realized mechanical connection by the insulation glue-line, also be provided with metal level on the described wiring board substrate, described metal level realizes that by conductive rubber conduction is connected with described metal-back.
2. silicon microphone as claimed in claim 1 is characterized in that: described insulation glue-line is annular glue-line, and described conductive rubber is to be arranged at the metal level of described wiring board substrate and the point-like colloid between the described metal-back.
3. silicon microphone as claimed in claim 1 is characterized in that: described insulation glue-line and described conductive rubber interruption are arranged alternately between the metal level and described metal-back of described wiring board substrate.
4. as the described silicon microphone of the arbitrary claim of claim 1-3, it is characterized in that: described wiring board substrate is square, and the described relatively wiring board substrate of described conductive rubber is symmetrically distributed.
5. silicon microphone as claimed in claim 4 is characterized in that: described conductive rubber is arranged at four bights of described wiring board substrate.
6. silicon microphone as claimed in claim 4 is characterized in that: described conductive rubber is arranged on the described wiring board substrate two opposite edges.
7. silicon microphone as claimed in claim 5 is characterized in that: described conductive rubber is a conductive silver paste.
8. silicon microphone as claimed in claim 5 is characterized in that: described insulation glue-line is insulating resin glue or insulation silica gel.
9. silicon microphone as claimed in claim 6 is characterized in that: described conductive rubber is a conductive silver paste.
10. silicon microphone as claimed in claim 6 is characterized in that: described insulation glue-line is insulating resin glue or insulation silica gel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205574724U CN201846474U (en) | 2010-10-12 | 2010-10-12 | Silicon microphone |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205574724U CN201846474U (en) | 2010-10-12 | 2010-10-12 | Silicon microphone |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201846474U true CN201846474U (en) | 2011-05-25 |
Family
ID=44041347
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010205574724U Expired - Lifetime CN201846474U (en) | 2010-10-12 | 2010-10-12 | Silicon microphone |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201846474U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103260125A (en) * | 2013-04-12 | 2013-08-21 | 日月光半导体制造股份有限公司 | Chip packaging structure and manufacturing method thereof |
| CN103548361A (en) * | 2011-09-09 | 2014-01-29 | 欧姆龙株式会社 | Semiconductor device and microphone |
| CN113194369A (en) * | 2021-03-25 | 2021-07-30 | 闻泰通讯股份有限公司 | Microphone |
-
2010
- 2010-10-12 CN CN2010205574724U patent/CN201846474U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103548361A (en) * | 2011-09-09 | 2014-01-29 | 欧姆龙株式会社 | Semiconductor device and microphone |
| CN103548361B (en) * | 2011-09-09 | 2016-12-14 | 欧姆龙株式会社 | Semiconductor device and mike |
| CN103260125A (en) * | 2013-04-12 | 2013-08-21 | 日月光半导体制造股份有限公司 | Chip packaging structure and manufacturing method thereof |
| CN103260125B (en) * | 2013-04-12 | 2017-06-06 | 日月光半导体制造股份有限公司 | Chip-packaging structure and its manufacture method |
| CN113194369A (en) * | 2021-03-25 | 2021-07-30 | 闻泰通讯股份有限公司 | Microphone |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN204408625U (en) | Mems microphone | |
| JP2010009594A5 (en) | ||
| CN105357616B (en) | Micro-electro-mechanical microphone packaging structure with three-dimensional substrate | |
| CN203840519U (en) | Loudspeaker module set | |
| US9260298B1 (en) | Stacked MEMS microphone packaging method | |
| CN201846474U (en) | Silicon microphone | |
| CN201138866Y (en) | Silicon microphone with improved structure | |
| CN102118674B (en) | A kind of MEMS microphone and method for packing thereof | |
| CN201846473U (en) | Silicon microphone | |
| CN105742255B (en) | Round metal chip level groove buried via hole type surface sound filtering chip encapsulating structure and method | |
| CN204442686U (en) | A kind of Piezo loudspeaker device | |
| CN107113485B (en) | The chip carrier based on lead frame used in the manufacture of MEMS transducer packaging part | |
| CN201450592U (en) | Miniature microphone with circuit board frame structure | |
| CN110769357A (en) | Microphone packaging structure adopting lead frame plastic shell | |
| CN101257736B (en) | Miniature capacitor type microphone | |
| CN106454669B (en) | MEMS microphone encapsulation | |
| CN202019449U (en) | Micro-electromechanical system (MEMS) microphone | |
| CN201947418U (en) | Micro Electro Mechanical Systems (MEMS) microphone | |
| CN202310095U (en) | MEMS (Micro Electro Mechanical System) microphone | |
| CN209949424U (en) | MEMS microphone and electronic equipment | |
| CN201142758Y (en) | Full-shielding capacitor type miniature microphone | |
| CN201165468Y (en) | MEMS microphone encapsulation structure | |
| CN210641072U (en) | Sensor packaging structure and electronic equipment | |
| CN202424982U (en) | Microphone | |
| CN201590897U (en) | MEMS microphone |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee after: Goertek Inc. Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee before: Goertek Inc. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200615 Address after: 266104 room 103, 396 Songling Road, Laoshan District, Qingdao, Shandong Province Patentee after: Goer Microelectronics Co.,Ltd. Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee before: GOERTEK Inc. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20110525 |